CN108766900A - A kind of On-wafer measurement DC probe card - Google Patents
A kind of On-wafer measurement DC probe card Download PDFInfo
- Publication number
- CN108766900A CN108766900A CN201810323613.7A CN201810323613A CN108766900A CN 108766900 A CN108766900 A CN 108766900A CN 201810323613 A CN201810323613 A CN 201810323613A CN 108766900 A CN108766900 A CN 108766900A
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- Prior art keywords
- probe
- feedback
- chip
- grounded
- wafer measurement
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The invention discloses a kind of On-wafer measurement DC probe cards, and Traditional DC probe card can be overcome there are the defect of parasitic inductance effect, and the On-wafer measurement that can be suitable for various microwave monolithic integrated circuits needs.Including ring-like medium substrate, the upper surface of substrate is welded with DC feedback probe and grounded probe, capacitance is connected on probe, DC feedback probe is connected with the top electrode of capacitance, grounded probe is connected with the lower electrode of capacitance, feed probes are connected to the direct current briquetting of chip under test through capacitance top electrode, and grounded probe is connected to the ground connection briquetting of chip under test through lower electrode.Influence this invention removes Traditional DC probe to microwave chip test result, improves test performance.
Description
Technical field
The present invention relates to microwave On-wafer measurement field more particularly to a kind of On-wafer measurement DC probe cards.
Background technology
Microwave On-wafer measurement is to do functional test to bare crystalline with probe before microwave monolithic integrated circuit not yet encapsulates, sieve
Defective products is selected, then the encapsulation engineering after carrying out.In short, On-wafer measurement DC probe card is between tester table and wafer
Interface, each test suite at least need a kind of corresponding DC probe card, and the purpose tested is so that wafer is cut
Non-defective unit enters next encapsulation procedure afterwards, and avoids defective products from continuing processing and cause to waste.Therefore DC probe is stuck in integrated circuit
Influence in manufacture to manufacturing cost and test result is particularly significant.
The test of microwave current IC chip is mostly tested using all kinds of microwave test instruments cooperation probe station,
The DC feedback of chip to be measured is generally used the DC feedback point of DC probe contact chip, but the clutter of bias supply
It can be loaded by bias loop on chip to be measured, influence the test result of microwave chip.Portion makes larger area in the chip
Shunt capacitance, it is all difficult to realize in cost and technique, if by carrying out Accurate Model to DC probe, gone in test
Influence except embedded DC probe to microwave test result, this method then needs huge manpower and materials, unrealistic.Especially
It is the test for amplifier chip, since the ghost effect of Traditional DC probe easily causes chip direct current oscillation to be measured,
Often resulting in can not test.
Invention content
Goal of the invention：In view of the above problems, the present invention proposes a kind of On-wafer measurement DC probe card.
Technical solution：To achieve the purpose of the present invention, the technical solution adopted in the present invention is：A kind of On-wafer measurement direct current
Probe card, including annular medium substrate, the upper surface of annular medium substrate have sub-miniature B connector, the needle member position for welding sub-miniature B connector,
Direct-current tie, the DC feedback pad for welding DC feedback probe, the ground pad for welding grounded probe and DC feedback are visited
Needle, grounded probe；Sub-miniature B connector connects power supply, then is connected to DC feedback pad by direct-current tie；DC feedback probe quilt
Be welded on annular medium substrate at corresponding DC feedback pad, the needle point of DC feedback probe by DC feedback briquetting with
Chip to be measured is connected；Grounded probe is welded on annular medium substrate at corresponding ground pad, and the needle point of grounded probe is logical
Ground connection briquetting is crossed by chip ground to be measured；One end of DC feedback probe is connected with the top electrode of chip capacity, grounded probe
The other end is connected with the lower electrode of chip capacity, is visited the needle point of DC feedback probe and ground connection by chip capacity upper/lower electrode
The needle point of needle is connected, and constitutes filter circuit.
Further, the quantity of DC feedback probe is identical as the DC feedback briquetting quantity on chip to be measured, and one by one
It is corresponding.
Further, further include the through-hole of fixed On-wafer measurement DC probe card on annular medium substrate.
Further, the top electrode of DC feedback probe and chip capacity passes through conductive glue bond, grounded probe and chip
The lower electrode of capacitance is also by conductive glue bond.
Further, the capacitance of chip capacity is 100pF~1000pF ± 10%；DC feedback probe and grounded probe
A length of 5000 ± 200 μm of needle；Air line distance about 300-400 μm of the bond locations of chip capacity to probe tip.
Further, DC feedback probe and grounded probe are ordinary blade needle, and probe material is alloy.
Advantageous effect：The present invention has the following advantages that compared with traditional microwave On-wafer measurement DC probe card：Effectively drop
Low traditional microwave On-wafer measurement DC probe card parasitic inductance effect, the parasitic inductance effect may cause circuit under test
There is the deviation of result in chip testing, or even can cause self-excitation damage during amplifier circuit chip On-wafer measurement, and avoids
Capacitance and its scolding tin scratch the possibility of circuit under test disk in test；Traditional DC probe is eliminated to survey microwave circuit chip
The influence of test result, improves test performance, can adapt to the test needs of various microwave chips extensively, simple in structure, at low cost,
Facilitate processing etc..
Description of the drawings
Fig. 1 is the top plan view of On-wafer measurement DC probe card of the present invention；
Fig. 2 is the section structure diagram of On-wafer measurement DC probe card of the present invention；
Fig. 3 is tested microwave circuit chip schematic diagram.
Specific implementation mode
Technical scheme of the present invention is further described with reference to the accompanying drawings and examples.
As shown in Figure 1, On-wafer measurement DC probe card of the present invention, including annular medium substrate 1, annular medium base
The upper surface of plate 1 is attached with sub-miniature B connector 2, the needle member position for welding sub-miniature B connector 2, direct-current tie 3, welding DC feedback probe
DC feedback pad 4, weld grounded probe ground pad 5 and DC feedback probe 6, grounded probe 7.
Sub-miniature B connector 2 is connected by cable with power supply, then is correspondingly connected with DC feedback pad by direct-current tie 3
4, DC feedback probe 6 is welded on annular medium substrate 1 at corresponding DC feedback pad 4, the needle of DC feedback probe 6
Point is connected by feeding briquetting with chip to be measured.
Grounded probe 7 is welded at the ground pad 5 of annular medium substrate 1, and the needle point of grounded probe 7 is by being grounded briquetting
By chip ground to be measured.One end of DC feedback probe 6 is connected with the top electrode of chip capacity 8, the other end of grounded probe 7 with
The lower electrode of chip capacity 8 is connected, by 8 upper/lower electrode of chip capacity by the needle point of DC feedback probe 6 and grounded probe 7
Needle point is connected, and constitutes effective filter circuit.The quantity of DC feedback probe and the DC feedback pressure on microwave chip to be measured
Number of blocks is identical, and corresponds.
Chip capacity 8 is mainly used to filter out the clutter of bias supply, and to reduce the active path of filter circuit, capacitance should use up
It may be close to circuit chip to be measured；It is also contemplated that the capacitance and its conducting resinl in the automatic test of disk on DC probe card cannot
Circuit under test chip is scratched, so capacitance cannot be fit directly at probe tip.
DC feedback probe 6 does not require line width and length, as long as meeting DC current capacity.Probe material
Selection, mainly determined by the briquetting material of circuit under test chip, usually to consider probe hardness and contact impedance it is big
It is small, determine probe material according to specific requirements.
At the 4 corresponding needle member position of DC feedback pad for welding DC feedback probe 6, need to weld sub-miniature B connector 2, ring
Direct-current tie 3 on shape medium substrate 1 is drawn by sub-miniature B connector 2, is fed by coaxial shielding line.It is also wrapped on annular medium substrate 1
Include the through-hole 9 of fixed microwave test DC probe card.
DC feedback probe 6 and the top electrode of chip capacity 8 pass through conductive glue bond, grounded probe 7 and chip capacity 8
Lower electrode is also by conductive glue bond；With grounded probe 7 all using ordinary blade needle, probe material is DC feedback probe 6
Alloy probe.
The capacitance of chip capacity 8 is 100pF~1000pF ± 10%；DC feedback probe 6 and the needle of grounded probe 7 are long
It is 5000 ± 200 μm；Air line distance about 300-400 μm of the bond locations of chip capacity 8 to probe tip.
Chip capacity and DC feedback probe, chip capacity and grounded probe, medium substrate and probe, sub-miniature B connector with it is straight
Connection between current feed line, sub-miniature B connector and ground wire is all be bonded by scolding tin, and drying later is fixed.
As shown in Fig. 2, 10 be the section of sheet chip capacity 8,11 be the section of DC feedback/grounded probe, and 12 be gold
Belong to blade profile, 13 be substrate section.Metal blade need to be unified to make with probe in processing, inseparable.
As shown in figure 3, for the tested microwave circuit chip in the present embodiment, this chip needs four groups of DC feedbacks, each
A chip capacity 8 is required on DC feedback probe 6 to filter out the clutter of power supply, the capacitance of the flaky electric capacity is 1000pF.
In view of on microwave circuit chip to be measured DC feedback briquetting 14 with ground connection briquetting 15 area and impression it is big
Small and shape, a diameter of 250 μm of probe, the diameter of section at needle point tip is 25 ± 3 μm, and the length at needle point tip is 250
± 20 μm, needle point tip and probe angulation itself are 107 ± 1 °, and the above visual specific requirements of numerical value make the appropriate adjustments；Again
In view of substrate back scolding tin has the influences such as scuffing to disk to be measured, the height of base plan to probe tip is 7.0 ± 0.2
μm, high visibility needs adjust accordingly.
DC feedback probe 6 shares 4, and the welding needle member position for the sub-miniature B connector 2 that can be connect with periphery that is corresponding to it also has
4, the sub-miniature B connector having more and DC feedback pad can be used as spare, which can be according to the DC feedback of chip to be measured
Number is different and different, and the spacing between each probe also can accordingly be adjusted according to the briquetting situation of chip to be measured.Flaky electric capacity with
The number of DC feedback probe is identical, likewise, corresponding different chip to be measured, the combination of chip capacity, which can accordingly be made, to be changed
Become.
Direct-current tie on medium substrate is not related with microwave frequency because only doing DC feedback, to line width and line length
It does not require, as long as meeting DC current capacity.
Claims (6)
1. a kind of On-wafer measurement DC probe card, it is characterised in that：Including annular medium substrate (1), annular medium substrate (1)
There is sub-miniature B connector (2) in upper surface, the needle member position of welding sub-miniature B connector (2), direct-current tie (3), welds DC feedback probe
DC feedback pad (4), the ground pad (5) and DC feedback probe (6), grounded probe (7) for welding grounded probe；
Sub-miniature B connector (2) connects power supply, then is connected to DC feedback pad (4) by direct-current tie (3)；
DC feedback probe (6) is welded on annular medium substrate (1) at corresponding DC feedback pad (4), DC feedback
The needle point of probe (6) is connected by DC feedback briquetting (14) with chip to be measured；Grounded probe (7) is welded on annular medium base
On plate (1) at corresponding ground pad (5), the needle point of grounded probe (7) is by being grounded briquetting (15) by chip ground to be measured；
One end of DC feedback probe (6) is connected with the top electrode of chip capacity (8), the other end and chip of grounded probe (7)
The lower electrode of capacitance (8) is connected, by chip capacity (8) upper/lower electrode by the needle point and grounded probe of DC feedback probe (6)
(7) needle point is connected, and constitutes filter circuit.
2. On-wafer measurement DC probe card according to claim 1, it is characterised in that：The quantity of DC feedback probe (6)
It is identical as DC feedback briquetting (14) quantity on chip to be measured, and correspond.
3. On-wafer measurement DC probe card according to claim 1, it is characterised in that：It is also wrapped on annular medium substrate (1)
Include the through-hole (9) of fixed On-wafer measurement DC probe card.
4. On-wafer measurement DC probe card according to claim 1, it is characterised in that：DC feedback probe (6) and chip
The top electrode of capacitance (8) is by conductive glue bond, and the lower electrode of grounded probe (7) and chip capacity (8) is also by conductive gluing
It closes.
5. On-wafer measurement DC probe card according to claim 1, it is characterised in that：The capacitance of chip capacity (8) is
100pF~1000pF ± 10%；A length of 5000 ± 200 μm of the needle of DC feedback probe (6) and grounded probe (7)；Chip capacity
(8) air line distance about 300-400 μm of the bond locations to probe tip.
6. On-wafer measurement DC probe card according to claim 1, it is characterised in that：DC feedback probe (6) and ground connection
Probe (7) is ordinary blade needle, and probe material is alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810323613.7A CN108766900A (en) | 2018-04-12 | 2018-04-12 | A kind of On-wafer measurement DC probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810323613.7A CN108766900A (en) | 2018-04-12 | 2018-04-12 | A kind of On-wafer measurement DC probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108766900A true CN108766900A (en) | 2018-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810323613.7A Pending CN108766900A (en) | 2018-04-12 | 2018-04-12 | A kind of On-wafer measurement DC probe card |
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| Country | Link |
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| CN (1) | CN108766900A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111562481A (en) * | 2020-05-25 | 2020-08-21 | 中国电子科技集团公司第十三研究所 | Compound semiconductor chip on-chip test circuit based on power-on probe |
| CN112255528A (en) * | 2020-09-25 | 2021-01-22 | 杭州加速科技有限公司 | Probe station for wafer test |
| CN114256730A (en) * | 2020-09-24 | 2022-03-29 | 华为技术有限公司 | Chip testing device |
| AT525517A1 (en) * | 2021-10-13 | 2023-04-15 | Gaggl Dipl Ing Dr Rainer | Test device and arrangement with this |
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| CN2849734Y (en) * | 2005-10-12 | 2006-12-20 | 中国科学院上海微系统与信息技术研究所 | Microwave chip tester |
| CN101949961A (en) * | 2010-08-16 | 2011-01-19 | 中国电子科技集团公司第五十五研究所 | Direct current offset probe card for radio frequency test |
| CN102571225A (en) * | 2011-06-30 | 2012-07-11 | 上海雷迪埃电子有限公司 | Radio frequency power self-test device and test method |
| US20120281444A1 (en) * | 2011-05-08 | 2012-11-08 | Paul Wilkinson Dent | Solar energy conversion and utilization system |
| US9143084B2 (en) * | 2011-08-25 | 2015-09-22 | California Institute Of Technology | On-chip power-combining for high-power schottky diode based frequency multipliers |
| CN205374533U (en) * | 2016-01-22 | 2016-07-06 | 中国电子科技集团公司第十三研究所 | Microwave millimeter wave DC bias probe |
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2018
- 2018-04-12 CN CN201810323613.7A patent/CN108766900A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2849734Y (en) * | 2005-10-12 | 2006-12-20 | 中国科学院上海微系统与信息技术研究所 | Microwave chip tester |
| CN101949961A (en) * | 2010-08-16 | 2011-01-19 | 中国电子科技集团公司第五十五研究所 | Direct current offset probe card for radio frequency test |
| US20120281444A1 (en) * | 2011-05-08 | 2012-11-08 | Paul Wilkinson Dent | Solar energy conversion and utilization system |
| CN102571225A (en) * | 2011-06-30 | 2012-07-11 | 上海雷迪埃电子有限公司 | Radio frequency power self-test device and test method |
| US9143084B2 (en) * | 2011-08-25 | 2015-09-22 | California Institute Of Technology | On-chip power-combining for high-power schottky diode based frequency multipliers |
| CN205374533U (en) * | 2016-01-22 | 2016-07-06 | 中国电子科技集团公司第十三研究所 | Microwave millimeter wave DC bias probe |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111562481A (en) * | 2020-05-25 | 2020-08-21 | 中国电子科技集团公司第十三研究所 | Compound semiconductor chip on-chip test circuit based on power-on probe |
| CN114256730A (en) * | 2020-09-24 | 2022-03-29 | 华为技术有限公司 | Chip testing device |
| CN114256730B (en) * | 2020-09-24 | 2024-03-26 | 华为技术有限公司 | Chip testing device |
| CN112255528A (en) * | 2020-09-25 | 2021-01-22 | 杭州加速科技有限公司 | Probe station for wafer test |
| AT525517A1 (en) * | 2021-10-13 | 2023-04-15 | Gaggl Dipl Ing Dr Rainer | Test device and arrangement with this |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181106 |
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| RJ01 | Rejection of invention patent application after publication |