US10312801B2 - High power density inverter (II) - Google Patents
High power density inverter (II) Download PDFInfo
- Publication number
- US10312801B2 US10312801B2 US15/743,054 US201615743054A US10312801B2 US 10312801 B2 US10312801 B2 US 10312801B2 US 201615743054 A US201615743054 A US 201615743054A US 10312801 B2 US10312801 B2 US 10312801B2
- Authority
- US
- United States
- Prior art keywords
- heatsink
- power inverter
- capacitors
- casing
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20909—Forced ventilation, e.g. on heat dissipaters coupled to components
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/12—Arrangements for reducing harmonics from ac input or output
- H02M1/126—Arrangements for reducing harmonics from ac input or output using passive filters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
- H02M1/143—Arrangements for reducing ripples from dc input or output using compensating arrangements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
- H02M1/15—Arrangements for reducing ripples from dc input or output using active elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/133—Modifications for switching at zero crossing in field-effect transistor switches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/12—Arrangements for reducing harmonics from ac input or output
- H02M1/123—Suppression of common mode voltage or current
-
- H02M2001/0058—
-
- H02M2001/123—
-
- H02M2007/4811—
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/4811—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode having auxiliary actively switched resonant commutation circuits connected to intermediate DC voltage or between two push-pull branches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- the present invention relates to a single phase, non-insulated, miniaturized DC/AC power inverter having a very high, preferably extremely high output power density.
- Power inverters are electronic devices which transform direct current (DC) to alternating current (AC).
- DC direct current
- AC alternating current
- inverters play nowadays an economic and environmental role which is more and more important in the frame of transformation of DC current produced by solar panels, batteries or similar sources into AC current for domestic or industrial use as well as in electric cars.
- Inverters manufactured by the Applicant for commercial and industrial companies permit saving of their critical applications by using energy stored in batteries, during distribution grid breakdown.
- Inverter MediaTM manufactured by the Applicant already allows to reach a power density of 680 W/liter at 2 kVA.
- Inverters used for example in electricity production facilities from solar energy still have a noticeable size (typically 50 liters or the size of a portable cooler). Size reduction of >10 ⁇ in volume, i.e. typically shrinking down to something smaller than a small laptop would enable powering more homes with solar energy, as well as improving distribution efficiency and distances ranges reached with electrical grids. Future will thus be dedicated to more robust, more reliable and more intelligent power inverters.
- CM common mode
- EMI noise is both in the form of conducted EMI, i.e. noise travelling along wires or conducting paths and through electronic components and in the form of radiated EMI (RFI), i.e. noise travelling through the air in the form of electro-magnetic fields or radio waves.
- RFI radiated EMI
- EMI filters made of passive components such as capacitors and inductors forming LC circuits. Conducted EMI is divided into common-mode noise (CMN) and differential-mode noise (DMN).
- CMN flows in the same direction in line and neutral AC power conductors, is in phase with itself relative to ground and returns to ground.
- Suitable CMN filter comprises inductors L 100 , L 200 placed in series with each power line and respective Y-capacitors C 100 , C 200 connecting each power conductors to ground (see for example CMN filter 100 in FIG. 1 in the case of a DC/AC converter).
- DMN exists between AC line and neutral conductors and is 180° out of phase with itself.
- Suitable DMN filter comprises C340 X-capacitors bridging the power lines, possibly supplemented by differential-suppression inductors L 300 , L 400 (see for example DMN filter 101 in FIG. 1 in the case of a DC/AC converter).
- the present invention aims at providing a power inverter having extremely high output power density.
- the invention is targeting to deliver an inverter having an output power density greater than 50 W/in 3 (or 3051 W/dm 3 or W/liter) on a maximum load of 2 kVA.
- Another goal of the present invention is to allow use of wideband-gap semiconductor switches, while assuring soft switching thereof for reducing switch losses, and while keeping inside acceptable limits for EMI noise generated by the very high switching speed of these components and while suitably managing high dV/dt in the switch commands.
- the present invention relates to a single phase, non-insulated, miniaturized DC/AC power inverter having an output power density higher than 3000 W/dm 3 and comprising:
- the DC/AC power inverter of the invention also comprises at least one of the following characteristics, or a suitable combination thereof:
- FIG. 1 shows an example of designing a basic solution for EMI filtering (common mode and differential filtering) in a DC/AC power converter.
- FIG. 2 schematically represents an example of embodiment for an inverter according to the present invention, the inverter having a five legs (or half-bridges) topology.
- FIG. 3 schematically represents a preferred embodiment for GaN driver protection against common mode EMI high dV/dt according to the present invention.
- FIG. 4 represents a thermal mapping for an example of inverter components implementation in the present invention, according to a plan view thereof, wherein the hottest parts are located in the direct air flow.
- FIG. 5 represents, in a height cross-section view, a detailed structure of the thermal interfaces in an inverter according to an embodiment of the present invention.
- FIG. 6 represents several examples of simulated heatsinks suitable to be used in the present invention.
- the inverter according to the present invention has to be designed to meet the requirements of Table 1.
- GaN transistors operated in so-called soft switching mode or ZVS (Zero Voltage Switching) mode combined with a specific parallel active filtering topology and with the use of multilayer ceramic capacitors (MLCC) as storage components are the key factors that have contributed to reaching such a high power density.
- the shape of the heatsink, the geometric arrangement of the ceramic capacitors and a thermal interfaces optimization contribute still to a low temperature of the device while in full load operation.
- An optimized software running on a fast microcontroller associated with a dedicated logic circuit (CPLD for complex programmable logic device) warrants ZVS behavior through the entire operation range and reduces electromagnetic noise. Double shielding and an optimized set of filters allow the inverter to meet electromagnetic compliance requirements.
- the design methodology applied comprises: precise dimensioning with analytical calculations and finite elements modeling; use of SPICE simulations for power and control; 3D mechanical modeling; and use of thermal simulations. This allowed to create an inverter device meeting all the requirements of Table 1 in a single calculation run.
- the use of GaN technology enables a power density of ⁇ 143 W/in. 3 for the 2 kVA inverter designed in this project.
- the dimensions thereof are approximately 2.5 ⁇ 1.6 ⁇ 3.5 inches, corresponding to a volume of about 14 inches 3 (or 0.2 liter).
- GaN transistors have many very useful electrical characteristics (low R ds _ on , low Q gate and C ds , ultra-low Q rr ). These clearly create technological advantages over currently and routinely used MOSFET and IGBT devices (both having small size and low production costs). Unfortunately, they also have serious drawbacks due to their very fast switching characteristics (for example extremely high “dV/dt”): they are noticeably challenging to drive and also require sensitive electromagnetic noise management. Another pitfall is the high voltage drop due to the reverse current when the GaN is turned off.
- One solution selected according to the present invention to overcome these difficulties consists in controlling all GaN transistors using soft switching (or ZVS switching) through the entire operation range.
- an inverter 1 with at least a three legs topology (full-bridge or 2-legs topology with a supplemental active filter) is chosen.
- a five legs topology is chosen according to a preferred embodiment shown in FIG. 2 , because it minimizes energy transfer within the inverter.
- the first half-bridge and the second half-bridge are each preferably split by an additional half-bridge mounted thereon in parallel. It allows accommodating high current and slight switching time differences.
- Two half bridges 201 (HB) generate the line voltage, while two further half bridges 202 generate the neutral voltage and the last half bridge 203 is used as the above-mentioned active filter.
- inductors L 1 to L 6 are rated between 10 ⁇ H and 50 ⁇ H. Due to the active filter 203 (with C 5 /L 6 ), input capacitor C 1 is reduced to less than 15 ⁇ F and C 5 is rated at less than 150 ⁇ F. Common mode inductors (L 7 to L 16 , see inversed “C” symbol) are rated between 200 ⁇ H and 1 mH.
- the EMC differential inductors (L 17 to L 22 , see “Z” symbol) are rated between 10 ⁇ H and 20 ⁇ H and the X capacitors (C 2 , C 6 , C 9 , C 18 to C 20 ) range from 1 ⁇ F to 5 ⁇ F.
- This inverter both come from optimized control of the five legs, via switching. For any type of load, this control shall achieve soft switching operation of all GaN devices while minimizing reverse currents during the dead times.
- a control algorithm ensures that the module is naturally protected against overcurrents.
- problems were encountered by the inventors, due to the high processing load demanded by the control algorithm.
- the processor was upgraded, by use of a 40% faster pin-to-pin compatible model.
- phase shift between the neutral and the line HBs (2 or 4 resp.) is necessary because the DMN filtering inductors are optimized at no phase shift. Soft switching does thus not occur anymore at each GaN switch. Moreover as switching is effected at extremely high speed, and with some uncertainty upon the current flowing in the DMN filtering inductors, next current switch may occur at a current value that has not (yet) returned to zero, thus leading to “not being ZVS”. A solution found for letting the current go closer to zero is to increase the dead time of the switch (not shown).
- capacitive voltage divider 301 (C 33 , C 34 ), is used for detecting when the current goes to zero (see FIG. 3 ).
- this capacitive divider allows the processor to manage an acceptable voltage measurement (typically about 5 V instead of maximum peak voltage of 450 V).
- the robustness of the GaN control is critical. Indeed, GaNs switch extremely fast so that they generate high “dV/dt” across the control isolation, far beyond the allowed values for most of the drivers currently on the market. Furthermore, the gate voltage threshold is very low. Still according to the invention, a very compact, low cost and extremely robust driver circuitry has been designed that can drive GaN transistors well within their specifications (see FIG. 3 ). According to one embodiment shown on FIG. 3 , one takes advantage of additional source and gate inductances (L 31 , L 32 ) to reject CMN traveling in the GaNs directly to ground, without affecting GaN driver 303 . CMN filter 302 is provided therefor (L 31 , C 31 , L 32 , C 32 ).
- Selecting a right GaN package is also very important.
- a SMD (surface mount) model with a 2-source access, one for the power, one for the command, was selected as the best choice for this design. It allows safe control of the transistor.
- a small package reduces the parasitic inductances and consequently the functional overvoltage.
- the PCB layout and the positioning of the decoupling capacitors are crucial for operating the GaN properly.
- the active filter works with higher voltage variations ( ⁇ 200 V pk-pk ) and stores the corresponding energy in ceramic capacitors whose capacitance rises as the voltage decreases, leading to three benefits:
- the software also contributes thereto; the algorithm maintains V in constant while allowing a larger ripple across the active filter. Moreover, a learning algorithm still reduces the input ripple (by a factor of 3) through correction of the modeling errors due to the presence of dead times.
- MLCC capacitors i.e. ceramic capacitors
- magnetic components are mainly composed of ferrite whose magnetic losses are known to be very low at high frequencies.
- the use of Litz wires minimizes the losses due to skin and proximity effects.
- the wires are wound directly onto the ferrite, without a coil former. Their cooling is provided by the air flow of the fan and by use of an aluminum oxide foil placed in the middle of the ferrite to create the requested air gap plus a thermal drain.
- the size of the filter capacitors and inductors is optimized by increasing allowed ripple current.
- an open loop Hall sensor combined with an electromagnetic shield leads to a very compact measurement device, offering galvanic decoupling and reducing the sensitivity to common mode and parasitic inductance noise. Time response thereof is very short which contributes to protect the inverter from short-circuit or high load impacts.
- the inverter module comprises mainly two parts.
- the first one includes device control, auxiliary supply, the five legs (or half bridges) and their corresponding drivers together with the heatsink.
- the second part includes the passive filters.
- a soft switching LLC resonant topology is used for the isolated auxiliary supply 12V/5V/3.3V ( ⁇ 10 W). This reduces the volume thereof to less than 0.128 in. 3 (0.8 ⁇ 0.8 ⁇ 0.2 in.), which enables suitable integration within the above-mentioned control part on an unique PCB.
- forced-air cooling is the only viable solution able to sufficiently reduce the thermal resistance to ambient air.
- an efficient axial fan ( ⁇ 1.57 ⁇ 1.57 ⁇ 0.6 in.) is placed in the middle of the front plate.
- the thermal simulation mapping in FIG. 4 shows the result when all components are optimally positioned around the fan, namely:
- FIG. 5 shows the thermal stack or sandwich according to one embodiment (height cross-section view).
- the GaN junction temperature does not exceed 60° C. with an ambient temperature of 30° C. at 2 kW load.
- FIG. 5 shows a detailed structure of the thermal interfaces according to one embodiment.
- the thermal impedances are as follows:
- the external shield 501 , 503 and the heatsink 512 are both made of copper, while the storage capacitors 514 are ceramic MLCC. Both materials were chosen to enhance heat flux and exchange surface area.
- the capacitor assembly constituting the active filter is an energy storage device but is also an extension of the heatsink 512 .
- the air flow between each MLCC row (preferably with a gap of ⁇ 0.04 in. or 1 mm between capacitors) enhances the cooling effect, as the capacitors sides play the role of fins.
- the volume occupied by the energy storage unit acts as a second heatsink, due to the assembly geometry and the capacitor type (good thermal conductor).
- FIG. 6 Several types of heatsinks as shown in FIG. 6 have been thermally simulated and compared with the above-mentioned 3D model (multiple blades 601 , honeycomb 602 , fins interlaced 603 or not, copper foam 604 , etc.).
- the two-dimensional structure surfacically distributes the temperature and further reduces the number of hot spots.
- inductors 504 are preferably thermally fastened to the copper shield 503 .
- a Gap-Pad 502 provides an electrically insulating but thermally conductive interface between the shield 503 and the external copper enclosure 501 . Thereby the thermal resistance of the interface helps to extract heat from the hottest inner components and prevent this heat to be dissipated locally by the external enclosure.
- EMC Electromagnetic Compliance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Inverter Devices (AREA)
Abstract
Description
-
- a DC input;
- an AC output;
- at least a H full-bridge topology switching circuit having an input connected to the DC input and an output connected to the AC output, and comprising switches made of wide-band semiconductors and preferably of gallium nitride or GaN semiconductors;
- at least one common mode noise EMI filter connected between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said common mode noise filters being referenced to an earth shielding or directly to earth, said common noise filters comprising filtering inductors and so-called Y capacitors;
- at least one differential mode noise EMI filter connected, in series with a corresponding common mode noise filter, between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said differential mode noise filters comprising so-called X filtering capacitors and optionally inductors;
- a ripple-compensating active filter comprising a switching half-bridge topology provided in parallel with the H full-bridge switching circuit and connected to a LC filter, made of at least one inductor (L6) and a plurality of storage capacitors (C5);
wherein said power inverter is packaged in a casing made of an external electrically conductive enclosure containing a fan blowing in an axial direction to a side face of the casing and, in a stacked elevation arrangement, successively from a bottom side to a top side, a layer of active filter capacitors, a heatsink, a layer of wideband semiconductors switches connected to a PCB with thermal vias and a layer of active filtering inductors, the fan and the component stacked arrangement being designed so as, in operation, the external temperature of the casing does not overcome 60° C. in any point, for an ambient temperature of maximum 30° C. under a maximum load of 2 kVA.
-
- the layer of active filter capacitors is composed of PCB-mounted rows of regularly spaced multilayer ceramic capacitors (MLCC), said capacitors being separated by a gap, said gap being preferably of about 1 mm and oriented in the blowing direction of the fan;
- the heatsink is a one-piece machined metallic heatsink selected from the group consisting of a multiple blades, honeycomb, interlaced-fins and metal foam heatsink, said heatsink being adjacent to the layer of active filter capacitors;
- the casing external conductive enclosure surrounds a conductive shielding separated thereof by a thermally conductive interface made of a gap pad;
- the active filtering inductors are composed of ferrite cores on which Litz wire is directly wound without a coil former, each inductor being made of two coils separated by a ceramic foil placed between the ferrites in order to create an air gap as well as thermal drain;
- the layer of wideband semiconductors switches connected to a PCB with thermal vias is adjacent the heatsink thanks to a ceramic insulation and microspring contacts, silicone foam being provided in gaps in order to uniformly spread switch contact pressure on the heatsink;
- the casing enclosure, the conductive shielding and the heatsink are made of copper;
- the passive filters, i.e. the common mode and differential mode EMI filters, are separated from the rest in the casing;
- part of the active filtering inductors are thermally fastened to the conductive shield.
-
- digital control based on a fast microcontroller combined with a dedicated logical circuit (CPLD);
- fast measurement of input/output currents and voltages;
- efficient feedback on the switching events of the HBs;
- a learning algorithm for driving the active filter;
- optimization of the switching frequency between 35 and 240 kHz depending on the output current; a variable phase shift between the HBs (0° or 90°) and a dead time modulation of the five HBs (50 ns to 3 μs). The switching losses are then almost canceled and the frequency increase helps to optimize (reduce) the size of the passive components.
-
- size reduction of the input tank capacitor C1 (less than 15 μF),
- size reduction of the filter capacitor C5 to less than 150 μF,
- inverter robustness due to the use of the GaNs below 450 Vdc.
-
- hottest components placed in the direct air flow;
- exchange surface areas maximized;
- pressure losses minimized;
- air speed near the side optimized and
- fresh air entry near the GaN heatsink to minimize the thermal resistance, maximizing the inverter efficiency.
-
- GaN junction thermal pad: 0.5° C./W;
-
PCB design 510 maximizing heat transfer from theGaN transistor 509 to the heatsink 512: 1.1° C./W; - thermal compound with aluminum oxide dust: 0.3° C./W;
- ceramic insulation foil with aluminum nitride 511: 0.02° C./W;
- thermally conductive glue with silver dust: 0.15° C./W and
- honeycomb-shaped
heatsink 512 with forced air (see below): 13° C./W (relative to a single GaN).
-
- soft switching operation of the main switches and auxiliary supply independently of the load;
- variable frequency and specific spread spectrum modulation;
- a first internal shield electrically connected to (L−=O V DC);
- a second shield (external enclosure) and a last filter stage shielding;
- an ACout filter referenced to (L−);
- the use of several small filters instead of a large one;
- the suppression of all the resonant poles at frequencies higher than 50 kHz;
- the use of ceramic capacitors to minimize the parasitic inductances and their size;
- the minimization of coupling between filters;
- the minimization of capacitive coupling in the inductor design.
-
- 100 Common mode noise filter
- 101 Differential mode noise filter
- 201 Line switch half bridge
- 202 Neutral switch half bridge
- 203 Active filter half bridge
- 204 Earth shielding or connection
- 301 Capacitive divider for zero-current crossing detection
- 302 CMN filter for GaN switch gate
- 303 GaN driver
- 501 Copper enclosure
- 502 Insulation/thermal interface
- 503 Copper shielding
- 504 Inductor(s)
- 505 Ceramic inductor gap
- 506 PCB interconnection
- 507 Micro-spring contacts
- 508 Silicone foam
- 509 GaN switch
- 510 PCB with thermal vias
- 511 Ceramic insulation
- 512 Honeycomb heatsink
- 513 PCB for mounting storage capacitors
- 514 Active filter ceramic capacitor
- 601 Multiple blades heatsink
- 602 Honeycomb heatsink
- 603 Interlaced fins heatsink
- 604 Copper foam heatsink
TABLE 1 | ||
Parameter | Requirement | Comment |
Maximum load | 2 | kVA | At 240 V RMS AC at 60 Hz |
Power density | >50 | W/in3 |
Volume | <40 in3(0.66 I) | Rectangular enclosure, max. |
dim. 20 in., min. 0.5 in. | ||
Voltage input | 450 V DC, R = 10 Ω | |
Voltage output | 240 +/− 12 V AC | Single phase |
Frequency output | 60 +/− 0.3 Hz | Single phase |
Power factor | 0.7-1 | Leading or lagging |
of load | ||
THD + N of Vout | <5% | Total harmonic distorsion + |
noise | ||
THD + N of Iout | <5% | Total harmonic distorsion + |
noise | ||
Efficiency | >95% | Measured by weighted |
average at different loads | ||
(var. of CEC method) | ||
Input ripple | <20% | Measured as Ipp/Iav from |
current (120 Hz) | 450 V supply in series | |
with a 10 Ω resistor | ||
Input ripple | <3% | Measured as Vpp/Vav from |
voltage (120 Hz) | 450 V supply in series | |
with a 10 Ω resistor | ||
Maximum outer | <60° C. | Tested at 15-30° C. ambient |
temperature | (any outside point to be | |
touched <60° C.) | ||
Electromagnetic | FCC Part 15 B | |
compliance |
Max. current on | <5 | mA | |
chassis GND | |||
connex. | |||
Claims (9)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15176078 | 2015-07-09 | ||
EP15176078.2 | 2015-07-09 | ||
EP15176078 | 2015-07-09 | ||
EP15195518.4 | 2015-11-20 | ||
EP15195518.4A EP3171684B1 (en) | 2015-11-20 | 2015-11-20 | High power density inverter (ii) |
EP15195518 | 2015-11-20 | ||
PCT/EP2016/064615 WO2017005505A1 (en) | 2015-07-09 | 2016-06-23 | High power density inverter (ii) |
Publications (2)
Publication Number | Publication Date |
---|---|
US20180205314A1 US20180205314A1 (en) | 2018-07-19 |
US10312801B2 true US10312801B2 (en) | 2019-06-04 |
Family
ID=56203389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/743,054 Active US10312801B2 (en) | 2015-07-09 | 2016-06-23 | High power density inverter (II) |
Country Status (4)
Country | Link |
---|---|
US (1) | US10312801B2 (en) |
CN (1) | CN107852840B (en) |
RU (1) | RU2702103C2 (en) |
WO (1) | WO2017005505A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109496057A (en) * | 2018-11-12 | 2019-03-19 | 晶晨半导体(上海)股份有限公司 | A kind of printed circuit board layout |
US10630164B1 (en) * | 2019-02-08 | 2020-04-21 | Hamilton Sundstrand Corporation | Generator systems |
CN110474525A (en) * | 2019-08-21 | 2019-11-19 | 北京华商三优新能源科技有限公司 | Charging unit including silicon carbide charging module |
CN111511138A (en) * | 2020-04-29 | 2020-08-07 | 四川虹美智能科技有限公司 | Machine cabinet |
DE102020124822A1 (en) * | 2020-05-25 | 2021-11-25 | Infineon Technologies Ag | Electrical inverter system |
US11742764B2 (en) * | 2021-02-04 | 2023-08-29 | Maxim Integrated Products, Inc. | Resonant power converters including coupled inductors |
CN116432599B (en) * | 2023-06-12 | 2023-08-08 | 北京智芯仿真科技有限公司 | Method and system for optimizing SINK pins of integrated circuit |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060120001A1 (en) * | 2004-12-03 | 2006-06-08 | Weber William J | Modular power supply assembly |
US20070189046A1 (en) * | 2006-02-13 | 2007-08-16 | Hidenori Sugino | Power conversion apparatus |
US20080174966A1 (en) * | 2006-12-07 | 2008-07-24 | Christopher Samuel Badger | Modular Power Converters Usable Alone or in a Multiphase Power Converter |
EP2149973A2 (en) | 2008-07-29 | 2010-02-03 | Hitachi Ltd. | Power conversion apparatus and electric vehicle |
US20120257429A1 (en) * | 2011-04-08 | 2012-10-11 | Dong Dong | Two-stage single phase bi-directional pwm power converter with dc link capacitor reduction |
US20130044434A1 (en) * | 2011-08-15 | 2013-02-21 | Lear Corporation | Power module cooling system |
US20130235628A1 (en) * | 2012-03-07 | 2013-09-12 | Dong Dong | Dc-side leakage current reduction for single phase full-bridge power converter/inverter |
EP2675054A1 (en) | 2011-02-08 | 2013-12-18 | Sanyo Electric Co., Ltd. | Power conditioner |
US20140369006A1 (en) | 2010-09-17 | 2014-12-18 | Intervention Technology, Pty, Ltd | Power supply device and components thereof |
EP2879475A1 (en) | 2013-11-27 | 2015-06-03 | SMA Solar Technology AG | Solar inverter |
US20160359426A1 (en) * | 2013-12-11 | 2016-12-08 | Rompower Energy Systems, Inc. | Packaging method for very high density converters |
US20170181257A1 (en) * | 2014-03-21 | 2017-06-22 | Cyrous Rostamzadeh | Common mode noise suppression of switchmode power converters by capacitive shield with damping network |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101960708B (en) * | 2008-03-06 | 2013-11-20 | 皇家飞利浦电子股份有限公司 | DC/AC power inverter control unit of a resonant power converter circuit, in particular a DC/DC converter for use in a high-voltage generator circuitry of a modern computed tomography device or X-ray radiographic system |
JP5380376B2 (en) * | 2010-06-21 | 2014-01-08 | 日立オートモティブシステムズ株式会社 | Power semiconductor device |
-
2016
- 2016-06-23 RU RU2018104099A patent/RU2702103C2/en not_active IP Right Cessation
- 2016-06-23 WO PCT/EP2016/064615 patent/WO2017005505A1/en active Application Filing
- 2016-06-23 US US15/743,054 patent/US10312801B2/en active Active
- 2016-06-23 CN CN201680040361.6A patent/CN107852840B/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060120001A1 (en) * | 2004-12-03 | 2006-06-08 | Weber William J | Modular power supply assembly |
US20070189046A1 (en) * | 2006-02-13 | 2007-08-16 | Hidenori Sugino | Power conversion apparatus |
US20080174966A1 (en) * | 2006-12-07 | 2008-07-24 | Christopher Samuel Badger | Modular Power Converters Usable Alone or in a Multiphase Power Converter |
EP2149973A2 (en) | 2008-07-29 | 2010-02-03 | Hitachi Ltd. | Power conversion apparatus and electric vehicle |
US20140369006A1 (en) | 2010-09-17 | 2014-12-18 | Intervention Technology, Pty, Ltd | Power supply device and components thereof |
EP2675054A1 (en) | 2011-02-08 | 2013-12-18 | Sanyo Electric Co., Ltd. | Power conditioner |
US20120257429A1 (en) * | 2011-04-08 | 2012-10-11 | Dong Dong | Two-stage single phase bi-directional pwm power converter with dc link capacitor reduction |
US20130044434A1 (en) * | 2011-08-15 | 2013-02-21 | Lear Corporation | Power module cooling system |
US20130235628A1 (en) * | 2012-03-07 | 2013-09-12 | Dong Dong | Dc-side leakage current reduction for single phase full-bridge power converter/inverter |
EP2879475A1 (en) | 2013-11-27 | 2015-06-03 | SMA Solar Technology AG | Solar inverter |
US20160359426A1 (en) * | 2013-12-11 | 2016-12-08 | Rompower Energy Systems, Inc. | Packaging method for very high density converters |
US20170181257A1 (en) * | 2014-03-21 | 2017-06-22 | Cyrous Rostamzadeh | Common mode noise suppression of switchmode power converters by capacitive shield with damping network |
Also Published As
Publication number | Publication date |
---|---|
RU2018104099A (en) | 2019-08-09 |
RU2018104099A3 (en) | 2019-08-29 |
US20180205314A1 (en) | 2018-07-19 |
RU2702103C2 (en) | 2019-10-04 |
CN107852840A (en) | 2018-03-27 |
WO2017005505A1 (en) | 2017-01-12 |
CN107852840B (en) | 2019-07-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10116201B2 (en) | High power density inverter (I) | |
US10312801B2 (en) | High power density inverter (II) | |
US11764686B1 (en) | Method and apparatus for delivering power to semiconductors | |
EP3171499A1 (en) | High power density inverter (i) | |
US11876520B1 (en) | Method and apparatus for delivering power to semiconductors | |
US10811958B2 (en) | Water-cooling power supply module | |
CN103855914B (en) | Power-supply system and power model therein and the method for making power model | |
JPWO2019092926A1 (en) | Electronic circuit equipment | |
US9263177B1 (en) | Pin inductors and associated systems and methods | |
Ghosh et al. | Industrial approach to design a 2-kVa inverter for Google little box challenge | |
CN111446902A (en) | AC-DC coupling integrated EMI filter for motor driving system | |
Dong et al. | Design of high-speed H-bridge converter using discrete SiC MOSFETs for solid-state transformer applications | |
Park et al. | A bare-die SiC-based isolated bidirectional DC-DC converter for electric vehicle on-board chargers | |
EP3171684B1 (en) | High power density inverter (ii) | |
Frebel et al. | Transformer-less 2 kW non isolated 400 VDC/230 VAC single stage micro inverter | |
Rohner et al. | Comparative evaluation of three-phase three-level GaN and seven-level Si flying capacitor inverters for integrated motor drives considering overload operation | |
JP5516623B2 (en) | Power converter | |
Lee et al. | Applications of GaN power devices | |
Gupta et al. | A DC planar bus bar of high-frequency power converter with enhanced current distribution | |
Josifovic et al. | A PCB system integration concept for power electronics | |
Alecks et al. | Design of an advanced high power density 1U intelligent rectifier | |
JP2018182880A (en) | Power conversion device | |
Kroics | Design Considerations of Common Mode and Differential Mode EMI Input Filter Based on Planar Ferrite Core | |
JP2006060876A (en) | Capacitor and its installation method | |
Lee et al. | 8.1 Hard switching vs soft switching [1] |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: CE+T POWER LUXEMBOURG, LUXEMBOURG Free format text: CHANGE OF NAME;ASSIGNOR:BROADBAND POWER SOLUTIONS;REEL/FRAME:045505/0265 Effective date: 20160714 Owner name: BROADBAND POWER SOLUTIONS S.A., LUXEMBOURG Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BLEUS, PAUL;JOANNES, THIERRY;MILSTEIN, FRANCOIS;AND OTHERS;REEL/FRAME:045505/0114 Effective date: 20160623 |
|
AS | Assignment |
Owner name: CE+T POWER LUXEMBOURG S.A., LUXEMBOURG Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE CONVEYING PARTY DATA AND RECEIVING PARTY DATA'S NAMES PREVIOUSLY RECORDED ON REEL 045505 FRAME 0265. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME;ASSIGNOR:BROADBAND POWER SOLUTIONS S.A.;REEL/FRAME:048443/0920 Effective date: 20160714 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FEPP | Fee payment procedure |
Free format text: SURCHARGE FOR LATE PAYMENT, LARGE ENTITY (ORIGINAL EVENT CODE: M1554); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |