CN203193538U - Three-level inverter for new energy - Google Patents
Three-level inverter for new energy Download PDFInfo
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- CN203193538U CN203193538U CN 201320129621 CN201320129621U CN203193538U CN 203193538 U CN203193538 U CN 203193538U CN 201320129621 CN201320129621 CN 201320129621 CN 201320129621 U CN201320129621 U CN 201320129621U CN 203193538 U CN203193538 U CN 203193538U
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Abstract
The utility model provides a three-level inverter for new energy. According to the three-level inverter, first and second capacitors are connected in series, and a connection point of the first and second capacitors is a capacitor midpoint; first and second switching tubes are sequentially connected in series between the first and second capacitors; the first and second switching tubes are connected to a third node; third and fourth switching tubes are connected in series, fifth and sixth switching tubes are connected in series, the two series branches are connected in parallel, and the parallel branch is connected between the third node and the capacitor midpoint, wherein the third and fifth switching tubes are connected to a first node, and the fourth and sixth switching tubes are connected to a second node; the first node is connected to the capacitor midpoint and the second node is connected to the third node; and the other end of the third node is connected to a filter, and first to sixth diodes are respectively and correspondingly connected in parallel to two ends of the first to sixth switching tubes. According to the utility model, loss of a frequently-used three-level circuit can be significantly improved, and the efficiency of the inverter, especially a new energy power generation system, can be improved.
Description
Technical field
The utility model relates to electric and electronic technical field, particularly, relates to a kind of inverter, especially a kind of new forms of energy three-level inverter.
Background technology
Along with the continuous development of wind power generation, photovoltaic generation, UPS (uninterrupted power supply) technology, the requirement of inverter efficiency also more and more is much accounted of, so three-level inverter just arises at the historic moment.As everyone knows, compare with traditional two-level inverter, two-level inverter also has advantages such as harmonic wave is little, loss is low, efficient height except making single IGBT blocking voltage reduces by half.
The tradition three-level inverter has obtained extensive use in systems such as wind power generation, photovoltaic generation.Such as, conventional I type three-level inverter shown in Figure 1, it can export three level, compares with two level circuits to have lower loss, can reduce the harmonic wave of output current simultaneously, reduces the output filter size.But shown in Fig. 2-4, traditional three level are exported Vdc/2 at circuit, 0, and during-Vdc/2, tube current is not positive and negative, and shown in solid line and dotted line among Fig. 2-4, electric current all needs to have higher conduction loss through two power devices.
Publication number is the Chinese invention patent of CN102611342A, this patent disclosure a kind of three-level inverter, realized that switching speed is fast, loss is little, and the related electric problem of having avoided the reverse recovery characteristic difference of MOSFET endophyte diode to cause.But still do not solve the above problems.
The utility model content
At defective of the prior art, the purpose of this utility model provides a kind of new forms of energy three-level inverter, reduces conduction loss, improves the efficient of inverter.
For achieving the above object, the utility model provides a kind of new forms of energy three-level inverter, comprise: first electric capacity, second electric capacity, first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, first diode, second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode and filter, wherein:
Described first electric capacity and described second capacitances in series, and both tie points are the electric capacity mid point;
Described first switching tube, described second switch pipe are connected between described first electric capacity and described second electric capacity successively; Described first switching tube and described second switch pipe are connected in the 3rd node;
Described the 3rd switching tube and the series connection of described the 4th switching tube, described the 5th switching tube and the series connection of described the 6th switching tube, these two series arms are in parallel again, this parallel branch is connected between the 3rd node and the electric capacity mid point, wherein said the 3rd switching tube and described the 5th switching tube are connected in first node, and described the 4th switching tube and described the 6th switching tube are connected in Section Point; Described first node is connected to the electric capacity mid point, and described Section Point is connected to described the 3rd node; Described the 3rd node other end connects filter;
Described first diode, second diode, the 3rd diode, the 4th diode, the 5th diode and the 6th diode correspond respectively to described first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube and the 6th switching tube, and the corresponding two ends that are connected in parallel on each switching tube.
Preferably, the anode of described first diode is connected in the 3rd node, and the negative electrode of described first diode is connected in first electric capacity; The negative electrode of described second diode is connected in the 3rd node, and the anode of described second diode is connected in second electric capacity; The anode of described the 3rd diode is connected in described first node, and the negative electrode of described the 3rd diode is connected in the negative pole of described the 4th switching tube and described the 4th diode, and the anode of described the 4th diode is connected to Section Point; The anode of described the 5th diode is connected in described the 6th switching tube and the 6th diode cathode, and the negative electrode of described the 5th diode is connected in described first node, and the negative electrode of described the 6th diode is connected in described Section Point.
Above-mentioned first switching tube, the second switch pipe of the utility model is IGBT pipe (insulated gate bipolar transistor).
The 4th switching tube that the utility model is above-mentioned, the 6th switching tube adopts the switching tube of identical type; The 3rd above-mentioned switching tube, the 5th switching tube adopts the switching tube of identical type; The kind of the kind of the 4th switching tube, the 6th switching tube and the 3rd switching tube, the 5th switching tube can be identical or different.
The the 3rd～the 6th switching tube described in the utility model specifically can adopt the pipe as MOSFET, and PowerMosfet manages (power field effect pipe), Coolmosfet pipe, any one in the switching tubes such as IGBT pipe.
Preferably, described first switching tube, second switch pipe, the 3rd switching tube and the 5th switching tube are the IGBT pipe, and wherein: the emitter of described first switching tube is connected in the 3rd node, and collector electrode is connected in first electric capacity; The collector electrode of described second switch pipe is connected in the 3rd node, and emitter is connected in second electric capacity; The emitter of described the 3rd switching tube is connected in first node, and collector electrode is connected in the 4th switching tube; The emitter of described the 5th switching tube is connected in the 6th switching tube, and collector electrode is connected in first node.The equal connection control signal of the base stage of these four IGBT pipes.
Preferably, described the 4th switching tube and the 6th switching tube all adopt the Coolmosfet pipe, and wherein: the drain electrode of described the 4th switching tube is connected in the collector electrode of the 3rd switching tube, and the source electrode of described the 4th switching tube is connected in Section Point; The drain electrode of described the 6th switching tube is connected in Section Point, and the source electrode of described the 6th switching tube is connected in the emitter of the 5th switching tube.The equal connection control signal of the grid of these two Coolmosfet pipes.
In the above-mentioned three-level inverter of the utility model, when the first switching tube conducting, the 3rd node is namely exported and is equaled V
DC/ 2, and when the conducting in parallel of the 3rd diode and the 4th switching tube and the 5th switching tube, the 6th diode, output equals 0, when the conducting of second switch pipe, is output as-V
DC/ 2.In this way, be the 3rd node at output point, can export the square-wave pulse that a series of duty ratios change by sinusoidal rule, behind the filter through inductance and electric capacity formation, provide sine voltage to load.
Compared with prior art, the utlity model has following beneficial effect:
The utlity model has all advantages of traditional three level, but different with traditional three-level inverter circuit, it is at output V
DC/ 2 ,-V
DC/ 2 o'clock, have only a power device conducting electric current, can increase the passage of a zero level simultaneously, so output 0 o'clock, can reduce conduction loss by the path parallel connection of two zero levels.Can adapt to the system that wind-powered electricity generation, photovoltaic etc. have power fluctuation by the mixed structure of IGBT and Coolmosfet etc. simultaneously.All can reach the purpose of optimization system efficient in the occasion of watt level.Generally speaking, it can obviously improve the loss of tri-level circuit commonly used, improves efficient, the especially grid-connected power generation system of inverter.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present utility model will become:
Fig. 1 is conventional I type three-level inverter circuit diagram;
Fig. 2-Fig. 4 is the current path figure of conventional I type three-level inverter;
Fig. 5 is the utility model one embodiment three-level inverter circuit diagram;
Fig. 6-Fig. 7 is the positive half cycle equivalent circuit diagram of the utility model one embodiment three-level inverter;
Fig. 8-Fig. 9 is the negative half period equivalent circuit diagram of the utility model one embodiment three-level inverter;
Figure 10-Figure 13 is that various switching tubes are selected circuit diagram among the utility model one embodiment.
Embodiment
Below in conjunction with specific embodiment the utility model is elaborated.Following examples will help those skilled in the art further to understand the utility model, but not limit the utility model in any form.Should be pointed out that to those skilled in the art, under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement.These all belong to protection range of the present utility model.
As shown in Figure 5, the utility model embodiment provides a kind of new forms of energy three-level inverter, comprise: first capacitor C 1, second capacitor C 2, first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 4th switch transistor T 4, the 5th switch transistor T 5, the 6th switch transistor T 6, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the 5th diode D5, the 6th diode D6, inductance L and the 3rd capacitor C 3, wherein:
Described first capacitor C 1 and 2 series connection of described second capacitor C, described first capacitor C 1 and described second capacitor C, 2 tie points are electric capacity mid point O;
Described first switch transistor T 1, described second switch pipe T2 are connected between described first capacitor C 1 and described second capacitor C 2 successively; Described first switch transistor T 1 and described second switch pipe T2 are connected in the 3rd node O3;
Described the 3rd switch transistor T 3 and 4 series connection of described the 4th switch transistor T, described the 5th switch transistor T 5 and 6 series connection of described the 6th switch transistor T, these two series arms are in parallel again, this parallel branch is connected between the 3rd node O3 and the electric capacity mid point O, wherein said the 3rd switch transistor T 3 and described the 5th switch transistor T 5 are connected in first node O1, and described the 4th switch transistor T 4 and described the 6th switch transistor T 6 are connected in Section Point O2; Described first node O1 is connected to electric capacity mid point O, and described Section Point O2 is connected to described the 3rd node O3; Described the 3rd node O3 other end connects filter; This filter is composed in series by inductance L and the 3rd capacitor C 3.
The described first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the 5th diode D5 and the 6th diode D6 correspond respectively to described first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 4th switch transistor T 4, the 5th switch transistor T 5 and the 6th switch transistor T 6, and the corresponding two ends that are connected in parallel on each switching tube;
The anode of the described first diode D1 is connected in the 3rd node O3, and the negative electrode of the described first diode D1 is connected in first capacitor C 1; The negative electrode of the described second diode D2 is connected in the 3rd node O3, and the anode of the described second diode D2 is connected in second capacitor C 2; The anode of described the 3rd diode D3 is connected in described first node O1, and the negative electrode of described the 3rd diode D3 is connected in the negative electrode of described the 4th switch transistor T 4 and described the 4th diode D4, and the anode of described the 4th diode D4 is connected to Section Point O2; The anode of described the 5th diode D5 is connected in described the 6th switch transistor T 6 and the 6th diode D6 anode, and the negative electrode of described the 5th diode D5 is connected in described first node O1, and the negative electrode of described the 6th diode D6 is connected in described Section Point O2.
In the present embodiment, described first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3 and the 5th switch transistor T 5 are IGBT pipe (insulated gate bipolar transistor), certainly, also can adopt the switching tube of other types in other embodiments.Wherein: the emitter of described first switch transistor T 1 is connected in the 3rd node O3, and collector electrode is connected in first capacitor C 1; The collector electrode of described second switch pipe T2 is connected in the 3rd node O3, and emitter is connected in second capacitor C 2; The emitter of described the 3rd switch transistor T 3 is connected in first node O1, and collector electrode is connected in the 4th switch transistor T 4; The emitter of described the 5th switch transistor T 5 is connected in the 6th switch transistor T 6, and collector electrode is connected in first node O1.The equal connection control signal of the base stage of these four IGBT pipes.
In the present embodiment, described the 4th switch transistor T 4 and the 6th switch transistor T 6 all adopt the Coolmosfet pipe, certainly, also can adopt the switching tube of other types in other embodiments.Wherein: the drain electrode of described the 4th switch transistor T 4 is connected in the collector electrode of the 3rd switch transistor T 3, and the source electrode of described the 4th switch transistor T 4 is connected in Section Point O2; The drain electrode of described the 6th switch transistor T 6 is connected in Section Point O2, and the source electrode of described the 6th switch transistor T 6 is connected in the emitter of the 5th switch transistor T 5.The equal connection control signal of the grid of these two Coolmosfet pipes.
Shown in Fig. 6-7, when positive half cycle, circuit can export 0 and V
DC/ 2, when opening switch transistor T 3, T4, T5, T6 and when closing other switching tube, circuit output 0.At this moment, if the sense of current for just, then shown in the solid arrow among Fig. 6, electric current flows to load through the 3rd diode D3 and the 4th switch transistor T 4, electric current flows to load-side through the 5th switch transistor T 5 and hexode D6 two shunt circuits simultaneously.When the sense of current for negative shown in another arrow the time, electric current is then got back to electric capacity mid point O through the 4th diode D4 and the 3rd switch transistor T 3 and the 6th switch transistor T 6 and the 5th diode D5 shunt circuit.And when opening first switch transistor T 1, circuit output V
DC/ 2.Electric current is timing, electric current from the decent T1 of electric capacity to load R; When electric current was negative, electric current was got back to positive bus-bar through the first diode D1 from load.As shown in Figure 7.
In like manner can analyze the negative half period situation, shown in Fig. 8-9, when negative half period, circuit can export 0 and-V
DC/ 2, when opening the 3rd～the 6th switch transistor T 3, T4, T5, T6 and when closing other switching tube, circuit output 0.At this moment, if the sense of current for just, then shown in the solid arrow among Fig. 8, electric current flows to load through the 3rd diode D3 and the 4th switch transistor T 4, electric current flows to load-side through the 5th switch transistor T 5 and hexode D6 two shunt circuits simultaneously.When the sense of current for negative shown in another arrow (dotted line) time, electric current is then got back to electric capacity mid point O through the 4th diode D4 and the 3rd switch transistor T 3 and the 6th switch transistor T 6 and the 5th diode D5 shunt circuit.And when opening second switch pipe T2, circuit output-V
DC/ 2.Electric current is timing, electric current from the decent second diode D2 of electric capacity to load R; When electric current was negative, electric current was got back to positive bus-bar through second switch pipe T2 from load.As shown in Figure 9.
Therefore the three-level inverter of above-described embodiment is at output V
DC/ 2 ,-V
DC/ 2 o'clock, have only a power device conducting electric current, can increase the passage of a zero level simultaneously, so output 0 o'clock, can reduce conduction loss by the path parallel connection of two zero levels.Can adapt to the system that wind-powered electricity generation, photovoltaic etc. have power fluctuation by the mixed structure of IGBT and Coolmosfet etc. simultaneously.All can reach the purpose of optimization system efficient in the occasion of watt level.
Should be understood that, each switching tube in above-described embodiment structure has multiple choices, as is listed below 4 kinds: Figure 10 intermediate switch pipe adopts full CoolMosfet, and Figure 11 adopts full IGBT, Figure 12 adopts IGBT to add the form of MOSFET, and Figure 13 adopts full MOSFET form.Same switch transistor T 1, T2 also can adopt forms such as MOSFET or Coolmosfet, enumerates no longer one by one herein, and it realizes that principle is identical with above preferred embodiment or similar.
More than specific embodiment of the utility model is described.It will be appreciated that the utility model is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present utility model.
Claims (7)
1. new forms of energy three-level inverter, it is characterized in that comprising: first electric capacity, second electric capacity, first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, first diode, second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode and filter, wherein:
Described first electric capacity and described second capacitances in series, and both tie points are the electric capacity mid point;
Described first switching tube, described second switch pipe are connected between described first electric capacity and described second electric capacity successively; Described first switching tube and described second switch pipe are connected in the 3rd node;
Described the 3rd switching tube and the series connection of described the 4th switching tube, described the 5th switching tube and the series connection of described the 6th switching tube, these two series arms are in parallel again, this parallel branch is connected between the 3rd node and the electric capacity mid point, wherein said the 3rd switching tube and described the 5th switching tube are connected in first node, and described the 4th switching tube and described the 6th switching tube are connected in Section Point; Described first node is connected to the electric capacity mid point, and described Section Point is connected to described the 3rd node; Described the 3rd node other end connects filter;
Described first diode, second diode, the 3rd diode, the 4th diode, the 5th diode and the 6th diode correspond respectively to described first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube and the 6th switching tube, and the corresponding two ends that are connected in parallel on each switching tube.
2. new forms of energy three-level inverter according to claim 1, it is characterized in that: the anode of described first diode is connected in the 3rd node, and the negative electrode of described first diode is connected in first electric capacity; The negative electrode of described second diode is connected in the 3rd node, and the anode of described second diode is connected in second electric capacity; The anode of described the 3rd diode is connected in described first node, and the negative electrode of described the 3rd diode is connected in the negative electrode of described the 4th switching tube and described the 4th diode, and the anode of described the 4th diode is connected to Section Point; The anode of described the 5th diode is connected in described the 6th switching tube and the 6th diode anode, and the negative electrode of described the 5th diode is connected in described first node, and the negative electrode of described the 6th diode is connected in described Section Point.
3. new forms of energy three-level inverter according to claim 2 is characterized in that, described first switching tube, second switch pipe are the IGBT pipe.
4. according to each described new forms of energy three-level inverter of claim 1-3, it is characterized in that described the 4th switching tube, the 6th switching tube adopt the switching tube of identical type; Described the 3rd switching tube, the 5th switching tube adopt the switching tube of identical type, and the kind of the 4th switching tube, the 6th switching tube is identical or different with the kind of the 3rd switching tube, the 5th switching tube.
5. new forms of energy three-level inverter according to claim 4 is characterized in that, described the 3rd～the 6th switching tube adopts the MOSFET pipe respectively, PowerMosfet pipe, Coolmosfet pipe, any one in the IGBT pipe.
6. new forms of energy three-level inverter according to claim 5, it is characterized in that, described first switching tube, second switch pipe, the 3rd switching tube and the 5th switching tube are the IGBT pipe, wherein: the emitter of described first switching tube is connected in the 3rd node, and collector electrode is connected in first electric capacity; The collector electrode of described second switch pipe is connected in the 3rd node, and emitter is connected in second electric capacity; The emitter of described the 3rd switching tube is connected in first node, and collector electrode is connected in the 4th switching tube; The emitter of described the 5th switching tube is connected in the 6th switching tube, and collector electrode is connected in first node; The equal connection control signal of the base stage of these four IGBT pipes.
7. new forms of energy three-level inverter according to claim 5, it is characterized in that, described the 4th switching tube and the 6th switching tube all adopt the Coolmosfet pipe, wherein: the drain electrode of described the 4th switching tube is connected in the collector electrode of the 3rd switching tube, and the source electrode of described the 4th switching tube is connected in Section Point; The drain electrode of described the 6th switching tube is connected in Section Point, and the source electrode of described the 6th switching tube is connected in the emitter of the 5th switching tube; The equal connection control signal of the grid of these two Coolmosfet pipes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320129621 CN203193538U (en) | 2013-03-20 | 2013-03-20 | Three-level inverter for new energy |
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| CN 201320129621 CN203193538U (en) | 2013-03-20 | 2013-03-20 | Three-level inverter for new energy |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490657A (en) * | 2013-10-22 | 2014-01-01 | 安徽金峰新能源股份有限公司 | Low-loss-type tri-electrical-level photovoltaic inverter |
| CN106410910A (en) * | 2016-10-28 | 2017-02-15 | 上海追日电气有限公司 | Three-level bidirectional charge and discharge circuit |
| WO2018209854A1 (en) * | 2017-05-19 | 2018-11-22 | 厦门科华恒盛股份有限公司 | Conversion circuit, corresponding three-phase conversion circuit and conversion device |
| CN113193768A (en) * | 2021-04-21 | 2021-07-30 | 三峡大学 | Four-switch-tube series-type back-to-back three-level rectifier |
-
2013
- 2013-03-20 CN CN 201320129621 patent/CN203193538U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490657A (en) * | 2013-10-22 | 2014-01-01 | 安徽金峰新能源股份有限公司 | Low-loss-type tri-electrical-level photovoltaic inverter |
| CN106410910A (en) * | 2016-10-28 | 2017-02-15 | 上海追日电气有限公司 | Three-level bidirectional charge and discharge circuit |
| CN106410910B (en) * | 2016-10-28 | 2019-04-05 | 上海追日电气有限公司 | A kind of three level Bidirectional charging-discharging circuits |
| WO2018209854A1 (en) * | 2017-05-19 | 2018-11-22 | 厦门科华恒盛股份有限公司 | Conversion circuit, corresponding three-phase conversion circuit and conversion device |
| CN113193768A (en) * | 2021-04-21 | 2021-07-30 | 三峡大学 | Four-switch-tube series-type back-to-back three-level rectifier |
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Granted publication date: 20130911 Termination date: 20140320 |