CN110086360A - A kind of five level high efficiency rectifiers - Google Patents
A kind of five level high efficiency rectifiers Download PDFInfo
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- CN110086360A CN110086360A CN201910323825.XA CN201910323825A CN110086360A CN 110086360 A CN110086360 A CN 110086360A CN 201910323825 A CN201910323825 A CN 201910323825A CN 110086360 A CN110086360 A CN 110086360A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of five level high efficiency rectifiers, it is applicable to single-phase, three-phase structure, it includes DC power supply, derided capacitors module, and every circuitry phase includes two silicon-based diode modules, Absorption Capacitance, striding capacitance, two silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor modules and filter inductance.The characteristics of rectifier of the present invention, is that only silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor is acted with HF switch, therefore switching loss is small；Compared to complete silicon carbide-based rectifier scheme, for technical solution of the present invention due to using silicon-based power diode, overall cost is low；Compared to other two, tri-level circuit, technical solution of the present invention can be realized five level rectifyings, may extend to middle pressure application.The rectifier is suitable for mesohigh, high-power applications Active Front End occasion.
Description
Technical field
The invention belongs to power electronics fields, and in particular to a kind of five level high efficiency rectifiers.
Background technique
AC-DC active rectifier technology is the very important component part of modern industry, it is adjustable speed motor, electronic vapour
The grid types power equipment such as vehicle charging pile and communication system provides DC power supply；It is wide with the appearance of more level topologies
It is general to be applied to middle pressure, large-power occasions: the fields such as uninterruptible power supply (UPS), middle pressure transmission system, direct current transportation.It is mostly electric
Flat technology can not only be adapted to high voltage and high power, and reduction exchange side harmonic distortion, device dv/dt switch stress, system are total
Mode voltage and electromagnetic interference, while passive element volume can be reduced by the increase of level number and reduce switching loss, from
And improve the power density of system.The extensive use of more level active commutation techniques can reduce current harmonics and low-power factor
Caused by additional wires be lost, improve energy efficiency and power supply quality, hoisting power density realizes energy-saving and emission-reduction.
Simplest active rectification equipment is that diode rectification input is followed by Boost circuit, and program structure is simple,
Technology maturation.But rectifier diode conduction loss is high, the diode reverse recovery losses of booster circuit under high frequency switch-mode
The problems such as high, makes such circuit efficiency not high, is generally only used for small-power occasion.
Bridgeless boost type rectifier structure is suitable for monophase system, is applied to Bridgeless boost type rectifier three when three-phase system
Phase direct current output needs are mutually isolated, therefore DC capacitor volume is big, and power density is low.
In document Single inductor three-level bridgeless boost power factor
correction rectifier with nature voltage clamp(IET Power Electron,2012.5(3):
P.358-365 Vienna three-level rectifier is mentioned in), such rectifier realizes three level by the control to two switching tubes
AC-DC rectification, conversion efficiency is high, is usually used in high power mesohigh occasion；But diode is connected with high frequency in the program
And shutdown, diode reverse recovery losses are big.
To be applicable in middle pressure, high-power and high power density requirement, document Active-neutral-point-
clamped(ANPC)multilevel converter technology(European Conference on Power
Electronics&Applications.IEEE, 2006) active neutral-point-clamped (ANPC) five level topology is proposed in, this is whole
Stream device realizes that the AC-DC of more level is rectified by the switch control to 4 high frequency mos and the movement of 4 low frequencies, compares three level
Such topological rectifier is more suitable for middle pressure large-power occasions；But there is the program switch of general more level topologys and gate pole to drive
Disadvantage more than dynamic quantity, further increases power density according to broad stopband device, then cost can greatly increase；In addition, this is opened up
8 switch pressure-bearings are inconsistent in flutterring, and according to the mode of devices in series, need the buffering equalizer circuit outside plus.
More level topologys can be by using similar Vienna three-level rectifier topological structure mode, by active switch device
The passive switches such as corresponding diode device is changed to reduce number of switches, realizes the unidirectional rectification application of power.In document A
Reduced Switch Hybrid Multilevel Unidirectional Rectifier(IEEE Transactions
2019.5 (3): on Power Electronics proposes a kind of hybrid five-level rectifier, this is whole in p.2070-2081)
Flowing utensil, there are four active switch, eight diodes and two striding capacitances, efficiency, power density and economy with higher
Property, but in the program, capacitor quantity is more, part-diodes still can have larger Reverse recovery with high frequency turn-on and turn-off
Loss.
The loss of semiconductor device portion in power conversion can be substantially reduced using silicon carbidebased devices, be based on silicon carbide
Five level rectifiers of diode and silicon based metal oxide semiconductor field effect transistor are partly led due to silicon based metal oxide
Body field effect transistor parasitic capacitance is big, and switching loss is still higher；But use silicon carbide diode and silicon carbide based metal oxide
Although switching loss can be significantly reduced in five level rectifiers of object semiconductor field effect transistor, but with high costs.
Summary of the invention
In view of above-mentioned, the present invention provides a kind of five level high efficiency rectifiers, use silicon-based power diode, integral into
This is low；And only silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor is acted with HF switch, therefore switching loss
It is small；And only one striding capacitance of every circuitry phase, overall power density are higher.The circuit due to its have five level blocks,
According to the silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor of 1.7kV voltage class in the market, can be applied to mostly
Pressure, high power density application in number.
A kind of five level high efficiency rectifiers, including external dc power or DC grid VDC, external communication source or alternating current
Net, several circuitry phases；Every circuitry phase includes: two derided capacitors CDC1~CDC2, a striding capacitance Cf, four power diodes
D1~D4, Absorption Capacitance CS, filter inductance L and four power switch tube Q with anti-paralleled diode5~Q8；Wherein, direct current
Source VDCAnode and each phase derided capacitors CDC1Positive and each phase power diode D1Cathode be connected, DC power supply VDC's
Cathode and each phase derided capacitors CDC2Cathode and each phase power diode D4Anode be connected, derided capacitors CDC1Cathode with
Derided capacitors CDC2Anode, power diode D2Anode and power diode D3Cathode be connected, power diode D1's
Anode and power diode D2Cathode, Absorption Capacitance CSAnode and power switch tube Q5Drain terminal be connected, power diode
D3Anode and power diode D4Cathode, Absorption Capacitance CSCathode and power switch tube Q6Source be connected, power is opened
Close pipe Q5Source and striding capacitance CfAnode and power switch tube Q7Drain terminal be connected, power switch tube Q6Drain terminal with
Striding capacitance CfCathode and power switch tube Q8Source be connected, power switch tube Q7Source and power switch tube Q8's
One end of drain terminal and filter inductance L are connected, the other end of filter inductance L phase phase corresponding with external communication source or AC network
Even.For single-phase circuit, the low-pressure end and derided capacitors C of external communication source or AC networkDC1Cathode, derided capacitors CDC2's
Anode, power diode D2Anode and power diode D3Cathode be connected；It is each mutually to divide for three-phase three-wire circuit
Capacitor CDC1Cathode, each phase derided capacitors CDC2Positive, each phase power diode D2Anode and each phase power diode D3
Cathode be connected, the neutral point of external communication source or AC network does not connect；For three-phase four-line system, each phase derided capacitors
CDC1Cathode, each phase derided capacitors CDC2Positive, each phase power diode D2Anode, each phase power diode D3Cathode
It is connected with the neutral point in external communication source or AC network；Wherein, every circuitry phase power switch tube Q5、Q6、Q7And Q8Grid end outside
Connect the switching signal that control equipment provides.
Further, the power diode D1~D4It is all made of silicon-based power diode.
Further, the power switch tube Q5、Q6、Q7And Q8It is all made of silicon carbide-based metal oxide semiconductcor field effect
Transistor is answered, the reverse recovery loss of body diode when can reduce field-effect tube shutdown in this way.
Further, the power switch tube Q5And Q6Switch phase, Q7And Q8Switch phase it is complementary respectively and switch
Frequency is high frequency i.e. in 1KHz or more, so that each silicon-based power diode carries out turn-on and turn-off, on-off with low frequency
Frequency is identical as the frequency of power grid, and power diode D1With D3Complementation conducting, power diode D2With D4Complementation conducting.
Further, for three-phase circuit, three derided capacitors C parallel with one anotherDC1, three partial pressure parallel with one another electricity
Hold CDC2It can be replaced the public single derided capacitors C of DC sideDC1, single derided capacitors CDC2。
Based on the above-mentioned technical proposal, compared with prior art the invention has the following advantages that
(1) silicon diode in the present invention carries out turn-on and turn-off with low frequency, and pressure-bearing is silicon carbide switches pipe pressure-bearing
Two times, the occasion suitable for voltage levels.In addition, due to the presence of Absorption Capacitance, silicon diode energy in half grid cycle
It enough realizes near zero voltage switch, overcomes the poor switching characteristic of high-voltage diode.
(2) four silicon carbide switches pipes carry out HF switch, and switching loss is low, and conversion efficiency is high.
(3) rectifier of the present invention uses two pole of silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor and silicon-based power
Pipe, cost are substantially reduced compared to full silicon carbide device scheme.
(4) rectifier of the present invention be derived from five level topology of ANPC and Vienna three-level rectifier, DC side be not necessarily to every
From substantially reducing DC capacitor volume, power density is high.
(5) Absorption Capacitance in the present invention provides necessary buffering for silicon carbide-based metal oxide semiconductor field effect tube
Circuit absorbs the energy in silicon carbide-based metal oxide semiconductor field effect tube handoff procedure in parasitic lead reactance, significantly
The influence for reducing circuit parasitic lead reactance reduces the voltage stress of switching device；Meanwhile the Absorption Capacitance has auxiliary
The effect of electric current commutation.
Detailed description of the invention
Fig. 1 (a) is the phase structure schematic diagram of five level high efficiency rectifiers of the invention, and Fig. 1 (b) is that five level of the invention are high
Imitate the three-phase structure schematic diagram of rectifier.
Fig. 2 is the timing diagram of transistor gate signal in five level high efficiency rectifiers of the invention.
Fig. 3 (a)~Fig. 3 (h) is respectively the schematic equivalent circuit under five level high efficiency rectifier of the invention, eight kinds of mode.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, with reference to the accompanying drawing and specific embodiment
The present invention is further described in detail.
As shown in Figure 1, high efficiency rectifier structure of the present invention includes DC power supply VDC, derided capacitors module, in every circuitry phase
It include: two silicon-based diode modules, Absorption Capacitance CS, striding capacitance Cf, silicon carbide-based metal oxide semiconductor field-effect it is brilliant
Body tube module and filter inductance L；Wherein, derided capacitors module includes the first DC partial voltage capacitor CDC1With the second DC partial voltage electricity
Hold CDC2；Silicon-based diode module includes first group of silicon-based diode module and second group of silicon-based diode module；First group of silicon substrate
Diode (led) module includes the first power diode D1With the second power diode D2, second group of silicon-based diode module includes third
Power diode D3With the 4th power diode D4；Silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor module includes the
One group of silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor module and second group of silicon carbide-based metal-oxide semiconductor (MOS)
Field effect transistor tube module；First group of silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor module includes band inverse parallel two
Pole pipe D5The 5th power switch tube Q5, band anti-paralleled diode D7The 7th power switch tube Q7, second group of silicon carbide-based metal
Oxide semiconductor field effect transistor module includes band anti-paralleled diode D6The 6th power switch tube Q6, band inverse parallel two
Pole pipe D8The 8th power switch tube Q8.First power diode D1Cathode connects the first DC partial voltage capacitor CDC1Anode, direct current
Power supply VDCAnode；First power diode D1Anode is separately connected the second power diode D2Cathode, Absorption Capacitance CSAnode, band
Anti-paralleled diode D5The 5th power switch tube Q5Drain electrode；Second power diode D2Anode is connected respectively to third power two
Pole pipe D3Cathode, the first DC partial voltage capacitor CDC1Cathode, the second DC partial voltage capacitor CDC2Anode；Third power diode D3Sun
Pole is separately connected the 4th power diode D4Cathode, Absorption Capacitance CSCathode, band anti-paralleled diode D6The 6th power switch tube
Q6Source electrode；4th power diode D4Anode connects the second DC partial voltage capacitor CDC2Cathode, DC power supply VDCCathode；Band is anti-simultaneously
Union II pole pipe D5The 5th power switch tube Q5Source electrode connects striding capacitance CfAnode, band anti-paralleled diode D7The 7th power
Switching tube Q7Drain electrode；Band anti-paralleled diode D6The 6th power switch tube Q6Drain electrode connection striding capacitance CfCathode, band inverse parallel
Diode D8The 8th power switch tube Q8Source electrode；Band anti-paralleled diode D7The 7th power switch tube Q7Source electrode connecting band is anti-
Parallel diode D8The 8th power switch tube Q8It drains, one end of filter inductance L；The other end connection of filter inductance L is external to hand over
Stream source or AC network Vg.When for single-phase circuit, power grid VgThe other end be connected to the second power diode D2Anode, third
Power diode D3Cathode, the first DC partial voltage capacitor CDC1Cathode, the second DC partial voltage capacitor CDC2Anode；When for phase three-wire three
When circuit processed, the second power diode D of each circuitry phase2Anode, third power diode D3Cathode, the first DC partial voltage capacitor
CDC1Cathode, the second DC partial voltage capacitor CDC2Anode is connected, and the neutral point of external communication source or AC network does not connect；When being three
When phase four-wire circuit, power grid VgNeutral point connect the second power diode D of each circuitry phase2Anode, third power diode
D3Cathode, the first DC partial voltage capacitor CDC1Cathode, the second DC partial voltage capacitor CDC2Anode.Silicon-based diode module is widely applied
In various power conversion systems, but switching loss is big, especially high-voltage diode.Therefore, silicon-based diode module
Switching frequency is limited in a certain frequency；In contrast with silicon-based diode module, silicon carbide-based MOS field
Lower switching loss can be presented in effect transistor module, and can more have in higher temperature than silicon-based diode module
The switching of effect ground.
In the present embodiment, silicon-based power diode and silicon carbide-based metal are selected in five level high efficiency rectifier systems
Oxide semiconductor field effect transistor.Silicon-based power diode may include various types of silicon-based powers two of different rated values
Pole pipe (such as 1.7kV, 3.3kV, 4.5kV or 6.5kV silicon diode)；Silicon carbide-based metal oxide semiconductor field effect transistor
Pipe may include various types of silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor of different rated values.Silicon-based power two
The switching of pole pipe is determined by high efficiency rectifier ac-side current；Silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor is cut
Changing can be controlled by providing the grid signal of its grid, and control waveform is as shown in Fig. 2, two-way triangular carrier and alternating current are modulated
Signal is compared generation control signal, wherein two-way triangular carrier C1、C2Amplitude it is equal, minimum value zero, only phase phase difference
180 degree；When original AC current modulation signal is greater than zero, the modulating wave for comparing with carrier wave is equal to original alternating current
Modulated signal is flowed, when original AC current modulation signal is less than zero, the modulating wave for comparing with carrier wave is carried equal to triangle
The maximum value of wave and original the sum of AC current modulation signal.When modulating wave is greater than triangular carrier C1, the 5th power switch tube
Q5Conducting, otherwise the 5th power switch tube Q5Shutdown；When modulating wave is greater than triangular carrier C2, the 7th power switch tube Q7Conducting, instead
The 7th power switch tube Q7Shutdown；5th power switch tube Q5With the 6th power switch tube Q6Control signal be complementary signal,
5th power switch tube Q5When conducting, the 6th power switch tube Q6Shutdown, otherwise the 6th power switch tube Q6Conducting；7th power
Switching tube Q7With the 8th power switch tube Q8Control signal be complementary signal, the 7th power switch tube Q7When conducting, the 8th power
Switching tube Q8Shutdown, otherwise the 8th power switch tube Q8Conducting.When stable state, striding capacitance CfVoltage be four points of DC voltage
One of, i.e. VDC/4。
In the positive half cycle of inductive current, there are four types of operation modes for high efficiency rectifier:
Mode 1: shown in equivalent circuit such as Fig. 3 (a), the first power diode D1, third power diode D3, the 5th power
Switching tube Q5With the 7th power switch tube Q7Conducting, the shutdown of other power switch tubes；Third power diode D3Although without electric current
It flows through, but due to the 6th power switch tube Q6For silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor, shutdown speed
Degree is far faster than silicon diode；6th power switch tube Q6When shutdown, third power diode D3Electric current has been zero, but still in
On state, charge does not have release way on diode, therefore tends to remain on；Third power diode D3Conducting is so that the
Six switching tube Q6Body diode be solely subjected to VDC/ 4 voltage, the 4th power diode D4On be solely subjected to VDC/ 2 voltage.
Mode 2: shown in equivalent circuit such as Fig. 3 (b), the first power diode D1, third power diode D3, the 6th power
Switching tube Q6With the 7th power switch tube Q7Conducting, the shutdown of other power switch tubes.
Mode 3: shown in equivalent circuit such as Fig. 3 (c), the first power diode D1, third power diode D3, the 6th power
Switching tube Q6With the 8th power switch tube Q8Conducting, the shutdown of other power switch tubes.
Mode 4: shown in equivalent circuit such as Fig. 3 (d), the first power diode D1, third power diode D3, the 5th power
Switching tube Q5With the 8th power switch tube Q8Conducting, the shutdown of other power switch tubes.
When being switched to mode 2 from mode 1, the 5th power switch tube Q5Shutdown, the 6th power switch tube Q6Conducting, electric current return
Seven power switch tube Q of Lu Cong7, the 5th power switch tube Q5It is switched to the 7th power switch tube Q7, striding capacitance Cf, the 6th function
Rate switching tube Q6.Due to the 5th power switch tube Q5For silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor, shutdown speed
Degree is far faster than silicon diode.5th power switch tube Q5When shutdown, the first power diode D1Electric current has been zero, but two poles
Pipe charge does not have Releasing loop, and Absorption Capacitance CSBoth end voltage ensure that the first power diode D1It is not subject to reversed electricity
Pressure, therefore the first power diode D1It tends to remain on.First power diode D1Conducting is so that the 5th power switch tube Q5's
Body diode is solely subjected to a quarter DC bus-bar voltage, with the second power diode D2On be solely subjected to half DC bus
Voltage.
In commutation course, the 5th power switch tube Q is flowed through5Electric current decline rapidly, flow through striding capacitance CfWith the 6th power
Switching tube Q6Electric current rise rapidly, sum of the two is the electric current on load inductance, and size can be considered constant in switching moment,
Therefore the 5th power switch tube Q is flowed through5Lead-in inductance and flow through striding capacitance CfEquivalent series inductance, the 6th power switch tube Q6
The electric current of lead-in inductance has trend on the contrary, the identical change rate of size.During current commutation, Absorption Capacitance CSAbsorb function
Energy in rate switching tube lead-in inductance, substantially reduces voltage overshoot caused by parasitic lead inductance, reduces power switch
The voltage stress of pipe.
When being switched to mode 3 from mode 2, the 7th power switch tube Q7Shutdown, the 8th power switch tube Q8Conducting, electric current return
Seven power switch tube Q of Lu Cong7, striding capacitance Cf, the 6th power switch tube Q6It is switched to the 8th power switch tube Q8, the 6th function
Rate switching tube Q6.During current commutation, due to striding capacitance CfClamping action, the voltage stress of power switch tube maintains
Near a quarter DC bus-bar voltage.
When being switched to mode 4 from mode 3, the 6th power switch tube Q6Shutdown, the 5th power switch tube Q5Conducting, electric current return
Eight power switch tube Q of Lu Cong8, the 6th power switch tube Q6It is switched to the 8th power switch tube Q8, striding capacitance Cf, the 5th function
Rate switching tube Q6.Similarly, since the 6th power switch tube Q6For silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor,
Turn-off speed is far faster than silicon diode.6th power switch tube Q6When shutdown, third power diode D3Electric current has been zero, but
It is that diode charge does not have Releasing loop, and Absorption Capacitance CSBoth end voltage ensure that third power diode D3It is not subject to
Backward voltage, therefore third power diode D3It tends to remain on.Third power diode D3Conducting is so that the 6th power switch
Pipe Q6Body diode be solely subjected to a quarter DC bus-bar voltage, the 4th power diode D4On be solely subjected to half direct current
Busbar voltage.
In the negative half period of inductive current, there are four types of operation modes for high efficiency rectifier:
Mode 5: shown in equivalent circuit such as Fig. 3 (e), the second power diode D2, the 4th power diode D4, the 5th power
Switching tube Q5With the 7th power switch tube Q7Conducting, the shutdown of other power switch tubes.
Mode 6: shown in equivalent circuit such as Fig. 3 (f), the second power diode D2, the 4th power diode D4, the 6th power
Switching tube Q6With the 7th power switch tube Q7Conducting, the shutdown of other power switch tubes.
Mode 7: shown in equivalent circuit such as Fig. 3 (g), the second power diode D2, the 4th power diode D4, the 6th power
Switching tube Q6With the 8th power switch tube Q8Conducting, the shutdown of other power switch tubes.
Mode 8: shown in equivalent circuit such as Fig. 3 (h), the second power diode D2, the 4th power diode D4, the 5th power
Switching tube Q5With the 8th power switch tube Q8Conducting, the shutdown of other power switch tubes.
When being switched to mode 6 from mode 5, the 5th power switch tube Q5Shutdown, the 6th power switch tube Q6Conducting, electric current return
Seven power switch tube Q of Lu Cong7, the 5th power switch tube Q5It is switched to the 7th power switch tube Q7, striding capacitance Cf, the 6th function
Rate switching tube Q6.Due to the 5th power switch tube Q5For silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor, shutdown speed
Degree is far faster than silicon diode.5th power switch tube Q5When shutdown, the second power diode D2Electric current has been zero, but two poles
Pipe charge does not have Releasing loop, and Absorption Capacitance CSBoth end voltage ensure that the second power diode D2It is not subject to reversed electricity
Pressure, therefore the secondth power diode D2It tends to remain on.Second power diode D2Conducting is so that the 5th power switch tube Q5
Body diode be solely subjected to a quarter DC bus-bar voltage, the first power diode D1On be solely subjected to half DC bus
Voltage.
In commutation course, the 5th power switch tube Q is flowed through5Electric current decline rapidly, flow through striding capacitance CfWith the 6th power
Switching tube Q6Electric current rise rapidly, sum of the two is the electric current on load inductance, and size can be considered constant in switching moment,
Therefore the 5th power switch tube Q is flowed through5Lead-in inductance and flow through striding capacitance CfEquivalent series inductance, the 6th power switch tube Q6
The electric current of lead-in inductance has trend on the contrary, the identical change rate of size.During current commutation, Absorption Capacitance CSAbsorb function
Energy in rate switching tube lead-in inductance, substantially reduces voltage overshoot caused by parasitic lead inductance, reduces power switch
The voltage stress of pipe.
When being switched to mode 7 from mode 6, the 7th power switch tube Q7Shutdown, the 8th power switch tube Q8Conducting, electric current return
Seven power switch tube Q of Lu Cong7, striding capacitance Cf, the 6th power switch tube Q6It is switched to the 8th power switch tube Q8, the 6th function
Rate switching tube Q6.During current commutation, due to striding capacitance CfClamping action, the voltage stress of power switch tube maintains
Near a quarter DC bus-bar voltage.
When being switched to mode 8 from mode 7, the 6th power switch tube Q6Shutdown, the 5th power switch tube Q5Conducting, electric current return
Eight power switch tube Q of Lu Cong8, the 6th power switch tube Q6It is switched to the 8th power switch tube Q8, striding capacitance Cf, the 5th function
Rate switching tube Q6.Similarly, since the 6th power switch tube Q6For silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor,
Turn-off speed is far faster than silicon diode.6th power switch tube Q6When shutdown, the 4th power diode D4Electric current has been zero, but
It is that diode charge does not have Releasing loop, and Absorption Capacitance CSBoth end voltage ensure that the second power diode D2It is not subject to
Backward voltage, therefore the 4th power diode D4It tends to remain on.4th power diode D4Conducting is so that the 6th power switch
Pipe Q6Body diode be solely subjected to a quarter DC bus-bar voltage, third power diode D3On be solely subjected to half direct current
Busbar voltage.The above-mentioned description to embodiment is for this hair can be understood and applied convenient for those skilled in the art
It is bright.Person skilled in the art obviously easily can make various modifications to above-described embodiment, and described herein
General Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments,
Those skilled in the art's announcement according to the present invention, the improvement made for the present invention and modification all should be in protections of the invention
Within the scope of.
Claims (4)
1. a kind of five level high efficiency rectifiers, it is characterised in that: including external dc power or DC grid VDC, external communication source
Or AC network, several circuitry phases；Every circuitry phase includes: two derided capacitors CDC1~CDC2, four power diode D1~D4、
Absorption Capacitance CS, striding capacitance Cf, filter inductance L and four power switch tube Q with anti-paralleled diode5~Q8；Wherein,
DC power supply VDCAnode and each phase derided capacitors CDC1Positive and each phase power diode D1Cathode be connected, direct current
Source VDCCathode and each phase derided capacitors CDC2Cathode and each phase power diode D4Anode be connected, derided capacitors CDC1's
Cathode and derided capacitors CDC2Anode, power diode D2Anode and power diode D3Cathode be connected, two pole of power
Pipe D1Anode and power diode D2Cathode, Absorption Capacitance CSAnode and power switch tube Q5Drain terminal be connected, power
Diode D3Anode and power diode D4Cathode, Absorption Capacitance CSCathode and power switch tube Q6Source be connected,
Power switch tube Q5Source and striding capacitance CfAnode and power switch tube Q7Drain terminal be connected, power switch tube Q6's
Drain terminal and striding capacitance CfCathode and power switch tube Q8Source be connected, power switch tube Q7Source and power switch
Pipe Q8Drain terminal and filter inductance L one end be connected, the other end of filter inductance L is corresponding with external communication source or AC network
It is connected；
For single-phase circuit, the low-pressure end and derided capacitors C of external communication source or AC networkDC1Cathode, derided capacitors CDC2
Anode, power diode D2Anode and power diode D3Cathode be connected；For three-phase three-wire circuit, each phase point
Voltage capacitance CDC1Cathode, each phase derided capacitors CDC2Positive, each phase power diode D2Anode and each two pole of phase power
Pipe D3Cathode be connected, the neutral point of external communication source or AC network does not connect；It is each mutually to divide electricity for three-phase four-line system
Hold CDC1Cathode, each phase derided capacitors CDC2Positive, each phase power diode D2Anode, each phase power diode D3Yin
Pole is connected with the neutral point in external communication source or AC network；Every circuitry phase power switch tube Q5、Q6、Q7And Q8Grid end it is external
Control the switching signal that equipment provides；The power switch tube Q5、Q6、Q7And Q8Silicon carbide-based metal oxide is all made of partly to lead
Body field effect transistor.
2. single-phase five level high efficiency rectifier according to claim 1, it is characterised in that: the power diode D1~D4
It is all made of silicon-based power diode.
3. single-phase five level high efficiency rectifier according to claim 1, it is characterised in that: the power switch tube Q5And Q6
Switch phase it is complementary, power switch tube Q7And Q8Switch phase it is complementary, and their switching frequency be high frequency i.e. 1kHz with
On.
4. single-phase five level high efficiency rectifier according to claim 1, it is characterised in that: for three-phase circuit, three phases
Mutually derided capacitors C in parallelDC1, three derided capacitors C parallel with one anotherDC2It can be replaced the public single derided capacitors of DC side
CDC1, single derided capacitors CDC2。
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| CN110601580A (en) * | 2019-09-24 | 2019-12-20 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | Five-level H-bridge converter and pre-charging method thereof |
| CN110880864A (en) * | 2019-12-13 | 2020-03-13 | 三峡大学 | Single-phase five-level power factor correction circuit based on hybrid H bridge |
| CN111030440A (en) * | 2019-12-13 | 2020-04-17 | 三峡大学 | Single-phase two-tube five-level rectifier based on hybrid H bridge |
| CN111030441A (en) * | 2019-12-13 | 2020-04-17 | 三峡大学 | Single-phase power factor correction circuit based on three-tube five-level topology |
| CN111082680A (en) * | 2019-12-13 | 2020-04-28 | 三峡大学 | Single-phase five-level rectifier based on T-shaped structure |
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| CN103595281A (en) * | 2013-10-09 | 2014-02-19 | 徐州中矿大传动与自动化有限公司 | Five-level voltage source type conversion device |
| CN104682736A (en) * | 2013-12-02 | 2015-06-03 | 台达电子企业管理（上海）有限公司 | Five-level rectifier |
| CN108462399A (en) * | 2018-01-11 | 2018-08-28 | 浙江大学 | A kind of high efficiency rectifier |
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| CN103595281A (en) * | 2013-10-09 | 2014-02-19 | 徐州中矿大传动与自动化有限公司 | Five-level voltage source type conversion device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110601580A (en) * | 2019-09-24 | 2019-12-20 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | Five-level H-bridge converter and pre-charging method thereof |
| CN110880864A (en) * | 2019-12-13 | 2020-03-13 | 三峡大学 | Single-phase five-level power factor correction circuit based on hybrid H bridge |
| CN111030440A (en) * | 2019-12-13 | 2020-04-17 | 三峡大学 | Single-phase two-tube five-level rectifier based on hybrid H bridge |
| CN111030441A (en) * | 2019-12-13 | 2020-04-17 | 三峡大学 | Single-phase power factor correction circuit based on three-tube five-level topology |
| CN111082680A (en) * | 2019-12-13 | 2020-04-28 | 三峡大学 | Single-phase five-level rectifier based on T-shaped structure |
| CN111082680B (en) * | 2019-12-13 | 2021-05-04 | 三峡大学 | Single-phase five-level rectifier based on T-shaped structure |
| CN111030441B (en) * | 2019-12-13 | 2021-06-04 | 三峡大学 | Single-phase power factor correction circuit based on three-tube five-level topology |
| CN110880864B (en) * | 2019-12-13 | 2021-07-06 | 三峡大学 | Single-phase five-level power factor correction circuit based on hybrid H bridge |
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