CN101667793B - Grid-connected inverter - Google Patents
Grid-connected inverter Download PDFInfo
- Publication number
- CN101667793B CN101667793B CN2009101905217A CN200910190521A CN101667793B CN 101667793 B CN101667793 B CN 101667793B CN 2009101905217 A CN2009101905217 A CN 2009101905217A CN 200910190521 A CN200910190521 A CN 200910190521A CN 101667793 B CN101667793 B CN 101667793B
- Authority
- CN
- China
- Prior art keywords
- oxide
- semiconductor
- metal
- diode
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
Abstract
The invention is applicable to the technical field of inverters and provides a grid-connected inverter which comprises a direct current power supply, a storing module which is connected with the direct current power supply, an inversion module which is connected with the storing module, an output module which is connected with the inversion module and a grid respectively and a continuing current circuit which is connected with the inversion module and the output module respectively. In the invention, on the basis of a traditional single-phase full-bridge grid-connected inverter, the grid-connected inverter introduces the continuing current circuit and is matched with a corresponding modulation mode, thus solving the existing problems of the traditional single-phase full-bridge grid-connected inverter when adopting double-polarity modulation and single-polarity modulation and increasing the inversion efficiency and the electromagnetic compatibility of the inverter effectively.
Description
Technical field
The invention belongs to technical field of inverters, relate in particular to a kind of combining inverter.
Background technology
Combining inverter generally is divided into photovoltaic combining inverter, wind power-generating grid-connected inverter, power-equipment combining inverter and other generating equipment combining inverters.Combining inverter can directly be converted to the regeneration cleaning electric energy of generations such as photovoltaic array and wind-driven generator and electrical network same frequency, synchronous sine wave AC electric energy feed-in electrical network.
Traditional single-phase full bridge combining inverter is when adopting the bipolarity modulation, the conversion efficiency of inverter is low, and traditional single-phase full bridge combining inverter is when adopting the unipolarity modulation, the electromagnetic compatibility of inverter (EMC, electromagnetic compatibility) poor performance.
Summary of the invention
The object of the present invention is to provide a kind of combining inverter, be intended to solve the problem that there is the low and Electro Magnetic Compatibility difference of conversion efficiency in existing single-phase full bridge combining inverter.
The present invention realizes like this, a kind of combining inverter, described combining inverter comprises DC power supply, the memory module that is connected with described DC power supply, the inversion module that is connected with described memory module, and the output module that is connected with electrical network with described inversion module respectively, described combining inverter also comprises:
The continuous current circuit that is connected with output module with described inversion module respectively, make described output module and continuous current circuit constitute the loop, memory module is an electric capacity, first end of described electric capacity is connected with second end with first end of DC power supply respectively with second end, described inversion module comprises first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected first end of described electric capacity simultaneously, the source electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected described continuous current circuit simultaneously, the drain electrode of described the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is connected described continuous current circuit simultaneously, the source electrode of described the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is connected second end of described electric capacity simultaneously, described continuous current circuit comprises the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, first diode and second diode, the negative electrode of described second diode connects the source electrode of second metal-oxide-semiconductor, the anode of described second diode connects the drain electrode of the source electrode and the 3rd metal-oxide-semiconductor of first metal-oxide-semiconductor simultaneously, the drain electrode of described the 6th metal-oxide-semiconductor connects the source electrode of second metal-oxide-semiconductor and the negative electrode of second diode simultaneously, the source electrode of described the 6th metal-oxide-semiconductor connects the drain electrode of the 5th metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor simultaneously, the source electrode of described the 5th metal-oxide-semiconductor connects the anode of first diode, and the negative electrode of described first diode connects the anode of second diode.
In the said structure, described output module comprises first inductance and second inductance, the anode of first termination, second diode of described first inductance, the second termination electrical network of described first inductance, the drain electrode of first termination the 4th metal-oxide-semiconductor of described second inductance, the ground end of the second termination electrical network of described second inductance.
In the present invention, combining inverter provided by the invention is on the basis of the full-bridge grid-connected inverter of traditional single phase, cooperate corresponding modulation system simultaneously by introducing continuous current circuit, thereby efficiently solve the full-bridge grid-connected inverter of traditional single phase when adopting the bipolarity modulation, exist the current ripples of output module big, inductor loss seriously reaches problems such as the inverter conversion efficiency is low, thereby improved the combining inverter conversion efficiency and improved indexs of correlation such as grid-connected current total harmonic distortion, combining inverter provided by the invention has also been avoided the full-bridge grid-connected inverter of traditional single phase simultaneously when adopting the unipolarity modulation, the problem of the high frequency saltus step that the memory module two ends exist electrical network zero line voltage, thus the Electro Magnetic Compatibility of inverter improved.
Description of drawings
Fig. 1 is the structure chart of the combining inverter that provides of the embodiment of the invention;
Fig. 2 is the exemplary circuit figure of the combining inverter that provides of the embodiment of the invention;
Fig. 3 is first fundamental diagram of the combining inverter that provides of the embodiment of the invention;
Fig. 4 is second fundamental diagram of the combining inverter that provides of the embodiment of the invention;
Fig. 5 is the 3rd fundamental diagram of the combining inverter that provides of the embodiment of the invention;
Fig. 6 is the 4th fundamental diagram of the combining inverter that provides of the embodiment of the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 shows the structure of the combining inverter that the embodiment of the invention provides, and for convenience of explanation, only shows part related to the present invention.
Combining inverter comprises DC power supply 100, the memory module 200 that is connected with DC power supply 100, the inversion module 300 that is connected with memory module 200, and the output module 400 that is connected with electrical network with inversion module 300 respectively, combining inverter also comprises continuous current circuit 500, it is connected with output module 400 with inversion module 300 respectively, makes output module 400 and continuous current circuit 500 constitute the loop.
Because the adding of continuous current circuit 500, make the afterflow path of output module 400 electric currents all not comprise memory module 200 two ends, this is with regard to the problem of the Electro Magnetic Compatibility difference effectively having been avoided memory module 200 two ends the voltage generation high frequency saltus step of electrical network zero line is brought, in addition, because the adding of continuous current circuit 500, guaranteed that output module 400 electric currents have the less current ripple, thereby reduced the loss of output module 400, promoted the efficient of combining inverter.
Fig. 2 shows the exemplary circuit structure of the combining inverter that the embodiment of the invention provides, and for convenience of explanation, only shows part related to the present invention.
As one embodiment of the invention, DC power supply 100 adopts solar panel and DC/DC DC voltage booster circuit, is called for short PV﹠amp; DC/DC, memory module 200 is a capacitor C 1, first end of capacitor C 1 and second end respectively with PV﹠amp; First end of DC/DC is connected with second end.
Continuous current circuit 500 comprises the 5th switching tube 501, the 6th switching tube 502, the first diode D5 and the second diode D6, the negative electrode of the second diode D6 connects second end of second switch pipe 302, the anode of the second diode D6 connects second end of first switching tube 301 and first end of the 3rd switching tube 303 simultaneously, first end of the 6th switching tube 502 connects second end of second switch pipe 302 and the negative electrode of the second diode D6 simultaneously, second end of the 6th switching tube 502 connects first end of the 5th switching tube 501 and first end of the 4th switching tube 304 simultaneously, the anode of second termination, the first diode D5 of the 5th switching tube 501, the negative electrode of the first diode D5 connects the anode of the second diode D6.
Above-mentioned switching tube can adopt IGBT pipe or metal-oxide-semiconductor, in embodiments of the present invention, first switching tube 301, second switch pipe 302, the 3rd switching tube 303, the 4th switching tube 304, the 5th switching tube 501 and the 6th switching tube 502 adopt the first metal-oxide-semiconductor S1 respectively, the second metal-oxide-semiconductor S2, the 3rd metal-oxide-semiconductor S3, the 4th metal-oxide-semiconductor S4, the 5th metal-oxide-semiconductor S5 and the 6th metal-oxide-semiconductor S6, the drain electrode of the first metal-oxide-semiconductor S1 and the second metal-oxide-semiconductor S2 is connected first end of capacitor C 1 simultaneously, the source electrode of the second metal-oxide-semiconductor S2 connects the drain electrode of negative electrode and the 6th metal-oxide-semiconductor S6 of the second diode D6 simultaneously, the anode of the second diode D6 connects the drain electrode of the 3rd metal-oxide-semiconductor S3, the source electrode of the 3rd metal-oxide-semiconductor S3 connects second end of capacitor C 1, the source electrode of the 6th metal-oxide-semiconductor S6 connects the drain electrode of the 4th metal-oxide-semiconductor S4, the source electrode of the 4th metal-oxide-semiconductor S4 connects second end of capacitor C 1, the source electrode of the first metal-oxide-semiconductor S1 connects the anode of the second diode D6 and first end of first inductance L 1 simultaneously, the drain electrode of the 5th metal-oxide-semiconductor S5 connects first end of second inductance L 2, the source electrode of the 5th metal-oxide-semiconductor S5 connects the anode of the first diode D5, and the negative electrode of the first diode D5 connects the anode of the second diode D6.
The exemplary circuit of the combining inverter that provides with the embodiment of the invention is an example below, and the working condition of this combining inverter is described.
Line voltage Vgrid is a sine voltage, and frequency is 50HZ or 60HZ.When line voltage Vgrid is in positive half cycle, the second metal-oxide-semiconductor S2, the 3rd metal-oxide-semiconductor S3, the 6th metal-oxide-semiconductor S6 turn-off all the time, the 5th metal-oxide-semiconductor S5 normal open, the first metal-oxide-semiconductor S1 and the 4th metal-oxide-semiconductor S4 open shutoff (promptly adopting the SPWM sinusoidal pulse width modulation) with the identical drive signals high frequency.When the first metal-oxide-semiconductor S1 and the 4th metal-oxide-semiconductor S4 opened, as Fig. 3, electric current formed loop works by " C1-S1-L1-Vgrid-L2-S4-C1 "; When the first metal-oxide-semiconductor S1 and the 4th metal-oxide-semiconductor S4 shutoff, as Fig. 4, electric current is by " S5-D5-L1-Vgrid-L2-S5 " loop afterflow.
When line voltage Vgrid was in negative half period, the first metal-oxide-semiconductor S1, the 4th metal-oxide-semiconductor S4, the 5th metal-oxide-semiconductor S5 turn-offed all the time, the 6th metal-oxide-semiconductor S6 normal open, and the second metal-oxide-semiconductor S2 and the 3rd metal-oxide-semiconductor S3 open shutoff with the identical drive signals high frequency.When the second metal-oxide-semiconductor S2 and the 3rd metal-oxide-semiconductor S3 opened, as Fig. 5, electric current formed loop works by " C1-S2-S6-L2-Vgrid-L1-S3-C1 "; When the second metal-oxide-semiconductor S2 and the 3rd metal-oxide-semiconductor S3 shutoff, as Fig. 6, electric current is by " S6-L2-Vgrid-L1-D6-S6 " loop afterflow.
By analysis to the above-mentioned working condition of combining inverter of the present invention, as can be seen: 1) in the positive-negative half-cycle of line voltage, because the adding of continuous current circuit 500, make the afterflow path of the electric current of the win inductance L 1 and second inductance L 2 all not comprise capacitor C 1 two ends, this is with regard to the problem of the Electro Magnetic Compatibility difference effectively having been avoided capacitor C 1 two ends the voltage generation high frequency saltus step of electrical network zero line is brought; 2) in the positive-negative half-cycle of line voltage, because the adding of continuous current circuit 500, A, B two point voltages are no-voltage when making the electric current afterflow of the win inductance L 1 and second inductance L 2 such as among Fig. 2, this has the less current ripple with regard to the electric current that has guaranteed first inductance L 1 and second inductance L 2, thereby reduced the loss of inductance, promoted the efficient of combining inverter; 3) in the positive-negative half-cycle of line voltage, because the afterflow of the electric current of first inductance L 1 and second inductance L 2 does not comprise the body diode of first switching tube 301, second switch pipe 302, the 3rd switching tube 303, the 4th switching tube 304, the 5th switching tube 501 and the 6th switching tube 502, therefore, above-mentioned all switching tubes all can adopt the lower COOLMOS pipe of switching loss and conduction loss, and this will further promote the efficient of combining inverter.
In embodiments of the present invention, combining inverter provided by the invention is on the basis of the full-bridge grid-connected inverter of traditional single phase, cooperate corresponding modulation system simultaneously by introducing continuous current circuit, thereby efficiently solve the full-bridge grid-connected inverter of traditional single phase when adopting the bipolarity modulation, exist the current ripples of output module big, inductor loss seriously reaches problems such as the inverter conversion efficiency is low, thereby improved the combining inverter conversion efficiency and improved indexs of correlation such as grid-connected current total harmonic distortion, combining inverter provided by the invention has also been avoided the full-bridge grid-connected inverter of traditional single phase simultaneously when adopting the unipolarity modulation, the problem of the high frequency saltus step that the memory module two ends exist electrical network zero line voltage, thus the Electro Magnetic Compatibility of inverter improved.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. combining inverter, described combining inverter comprises DC power supply, the memory module that is connected with described DC power supply, the inversion module that is connected with described memory module, and the output module that is connected with electrical network with described inversion module respectively, it is characterized in that described combining inverter also comprises:
The continuous current circuit that is connected with output module with described inversion module respectively, make described output module and continuous current circuit constitute the loop, memory module is an electric capacity, first end of described electric capacity is connected with second end with first end of DC power supply respectively with second end, described inversion module comprises first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected first end of described electric capacity simultaneously, the source electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected described continuous current circuit simultaneously, the drain electrode of described the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is connected described continuous current circuit simultaneously, the source electrode of described the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is connected second end of described electric capacity simultaneously, described continuous current circuit comprises the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, first diode and second diode, the negative electrode of described second diode connects the source electrode of second metal-oxide-semiconductor, the anode of described second diode connects the drain electrode of the source electrode and the 3rd metal-oxide-semiconductor of first metal-oxide-semiconductor simultaneously, the drain electrode of described the 6th metal-oxide-semiconductor connects the source electrode of second metal-oxide-semiconductor and the negative electrode of second diode simultaneously, the source electrode of described the 6th metal-oxide-semiconductor connects the drain electrode of the 5th metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor simultaneously, the source electrode of described the 5th metal-oxide-semiconductor connects the anode of first diode, and the negative electrode of described first diode connects the anode of second diode.
2. combining inverter as claimed in claim 1, it is characterized in that, described output module comprises first inductance and second inductance, the anode of first termination, second diode of described first inductance, the second termination electrical network of described first inductance, the drain electrode of first termination the 4th metal-oxide-semiconductor of described second inductance, the ground end of the second termination electrical network of described second inductance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101905217A CN101667793B (en) | 2009-09-29 | 2009-09-29 | Grid-connected inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101905217A CN101667793B (en) | 2009-09-29 | 2009-09-29 | Grid-connected inverter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101667793A CN101667793A (en) | 2010-03-10 |
| CN101667793B true CN101667793B (en) | 2011-11-30 |
Family
ID=41804271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101905217A Active CN101667793B (en) | 2009-09-29 | 2009-09-29 | Grid-connected inverter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101667793B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097930A (en) * | 2011-03-02 | 2011-06-15 | 浙江格瑞特新能源有限公司 | Anti-DC electromagnetic interference highly-efficiency inverter |
| CN102163935A (en) * | 2011-03-04 | 2011-08-24 | 东南大学 | Photovoltaic grid-connected converter with alternating bypass unit |
| CN102403921A (en) * | 2011-12-01 | 2012-04-04 | 合肥索维能源科技有限公司 | High-efficiency inverter with low output leakage current |
| CN102545682B (en) * | 2011-12-29 | 2014-08-06 | 阳光电源股份有限公司 | Single-phase inverter |
| CN103001523B (en) * | 2012-10-31 | 2015-07-08 | 上海交通大学 | Zero-voltage switching energy storage bridge-type inverter without additional voltage and modulation method for inverter |
| CN102983769B (en) * | 2012-12-07 | 2016-03-30 | 云南储光科技有限公司 | One is distributed cools photovoltaic inverter system naturally |
| WO2014089735A1 (en) * | 2012-12-10 | 2014-06-19 | 深圳市英威腾电气股份有限公司 | Grid-connected inverter circuit and control method thereof |
| CN106992705B (en) * | 2017-03-22 | 2023-04-14 | 珠海格力电器股份有限公司 | Inverter with a voltage regulator |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388616A (en) * | 2008-11-03 | 2009-03-18 | 南京航空航天大学 | Double step-down combining inverter |
-
2009
- 2009-09-29 CN CN2009101905217A patent/CN101667793B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388616A (en) * | 2008-11-03 | 2009-03-18 | 南京航空航天大学 | Double step-down combining inverter |
Non-Patent Citations (3)
| Title |
|---|
| 张兴等.单相非隔离型光伏并网系统中共模电流抑制的研究.《太阳能学报》.2009,第30卷(第9期),1202-1208. * |
| 徐晓峰等.IGBT逆变器吸收电路的研究.《电力电子技术》.1998,(第3期),43-47. * |
| 马琳等.无变压器结构光伏并网系统共模漏电流分析.《太阳能学报》.2009,第30卷(第7期),883-888. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101667793A (en) | 2010-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101980409B (en) | Grid-connected photovoltaic inverter | |
| CN101667793B (en) | Grid-connected inverter | |
| CN101667789B (en) | Inverter circuit used for solar energy photovoltaic grid connection and device thereof | |
| CN201536328U (en) | grid-connected inverter | |
| CN202535290U (en) | Photovoltaic inverter circuit | |
| CN103023362A (en) | Bridgeless inverter circuit and solar bridgeless inverter | |
| CN205647288U (en) | Non - isolated form photovoltaic grid -connected inverter | |
| CN103956927A (en) | Voltage-active-clamping non-transformer-type single-phase photovoltaic inverter | |
| CN102361408A (en) | Non-isolated photovoltaic grid-connected inverter and switching control time sequence thereof | |
| CN202513843U (en) | Full-bridge grid-connected inverter | |
| CN103326606A (en) | One-phase five-level inverter | |
| CN201515320U (en) | Grid-connected inverter | |
| CN104638971A (en) | Photovoltaic grid-connected inverter and control method thereof | |
| CN102684530A (en) | Method for controlling transformerless inverter with reactive power compensation function | |
| CN105186912A (en) | Two-stage non-isolated full-bridge grid-connected inverter | |
| CN102088252A (en) | Inverter without transformer realized by switched capacitor and applications of inverter | |
| CN105656077A (en) | Efficient low-leakage current seven-switch photovoltaic grid-connected inverter circuit and modulation method thereof | |
| CN104065293A (en) | Transformer-free type single-phase photovoltaic inverter with mixed voltage clamping | |
| CN102403920B (en) | Three-level half-bridge photovoltaic grid connected inverter | |
| Hu et al. | A high-efficiency single-phase inverter for transformerless photovoltaic grid-connection | |
| Islam et al. | A new high efficient transformerless inverter for single phase grid-tied photovoltaic system with reactive power control | |
| CN201550040U (en) | grid-connected inverter | |
| Xiao et al. | Soft-switching techniques for transformerless photovoltaic grid-connected inverters | |
| CN202713179U (en) | Double-transformer series resonance type miniature photovoltaic inverter | |
| CN202334357U (en) | Three-level half-bridge photovoltaic grid-connected inverter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230705 Address after: 518000, 9th Floor, R&D Building, Keshida Industrial Park, No.7 Road, Guangming New Area, Shenzhen, Guangdong Province Patentee after: SHENZHEN KSTAR NEW ENERGY Co.,Ltd. Address before: 518057, 401, 402 and 1, two software park, hi tech North Zone, Nanshan District, Guangdong, Shenzhen Patentee before: SHENZHEN KSTAR SCIENCE AND TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |