CN113218543A - Flexible pressure sensor, dielectric layer thereof and preparation method of dielectric layer - Google Patents

Flexible pressure sensor, dielectric layer thereof and preparation method of dielectric layer Download PDF

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CN113218543A
CN113218543A CN202110496994.0A CN202110496994A CN113218543A CN 113218543 A CN113218543 A CN 113218543A CN 202110496994 A CN202110496994 A CN 202110496994A CN 113218543 A CN113218543 A CN 113218543A
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dielectric layer
pressure sensor
polymer matrix
flexible pressure
matrix material
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CN113218543B (en
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潘革波
聂立璠
张龙
张少辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/14Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors

Abstract

A method for preparing a dielectric layer for a flexible pressure sensor is provided, which includes: forming a cured film using a sacrificial material and a polymer matrix material; and placing the solidified film in a sacrificial material removing solution to remove the sacrificial material, thereby forming the dielectric layer with a three-dimensional porous structure. The dielectric layer prepared by the preparation method and the flexible pressure sensor with the dielectric layer are also provided. In the preparation process of the dielectric layer, the dielectric layer with a three-dimensional porous structure is obtained by utilizing the sacrificial material, and the three-dimensional porous structure can ensure that the dielectric layer has higher porosity and is easier to deform under the action of stress, so that the dielectric layer has excellent elastic performance.

Description

Flexible pressure sensor, dielectric layer thereof and preparation method of dielectric layer
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a dielectric layer for a flexible pressure sensor, a preparation method of the dielectric layer and the flexible pressure sensor.
Background
In recent years, sensing technology gradually advances people's lives, and especially in the aspect of flexible pressure sensors, because of excellent mechanical properties and electrical properties, the flexible pressure sensors play a great role in wearable devices, electronic skins, human-computer interaction interfaces and the like, and have important research values, and therefore, the development of high-performance pressure sensors is of great importance.
Among the flexible pressure sensors, the capacitive sensor has the advantages of high precision, low power consumption, simple manufacturing process, good temperature resistance and the like, and the action mechanism is as follows: the thickness of the dielectric layer is changed by applying pressure, so that the dielectric layer generates capacitance change, the capacitance change is converted into an electric signal, and the magnitude of the pressure is determined by the electric signal.
Therefore, the dielectric layer is an important optimization object for improving the sensitivity, the pressure response range and the like of the capacitive pressure sensor. The dielectric layer of the flexible pressure sensor is usually made of a polymer material, and due to the limitation of the elastic property of the material, the deformation of the dielectric layer along with the change of stress action is not facilitated, so that the sensitivity and the detection range of the pressure sensor based on the dielectric layer are influenced.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a dielectric layer for a flexible pressure sensor, a preparation method thereof and the flexible pressure sensor.
According to an aspect of an embodiment of the present invention, there is provided a method of preparing a dielectric layer for a pressure sensor, including: forming a cured film using a sacrificial material and a polymer matrix material; and placing the solidified film in a sacrificial material removing solution to remove the sacrificial material, thereby forming the dielectric layer with a three-dimensional porous structure.
In one aspect of the foregoing embodiments, there is provided a method for manufacturing a dielectric layer for a flexible pressure sensor, the method for forming a cured thin film using a sacrificial material and a polymer matrix material, including: uniformly dispersing the sacrificial material, the ceramic material and the polymer matrix material in an organic solvent to form a first mixed solution; heating the first mixed solution to evaporate the organic solvent to form a mixture; adding a curing agent to the mixture to form a cured mixture, and forming the cured film using the cured product.
In one aspect of the foregoing embodiments, there is provided a method for manufacturing a dielectric layer for a flexible pressure sensor, the method for forming a cured thin film using a sacrificial material and a polymer matrix material, including: uniformly dispersing the sacrificial material in an organic solvent to form a second mixed solution; coating the second mixed solution on a substrate, and heating the substrate to evaporate and remove the organic solvent, thereby forming a first thin film; forming a prepolymer using a ceramic material, the polymer matrix material, and a curing agent; coating the prepolymer on the first film to form the cured film.
In the method for manufacturing a dielectric layer for a flexible pressure sensor provided in an aspect of the above embodiment, the ceramic material is a barium titanate nanowire, the polymer matrix material includes one of polydimethylsiloxane, polyurethane, polyimide, and polyvinyl alcohol, and the sacrificial material is a polystyrene microsphere.
In the method for manufacturing a dielectric layer for a flexible pressure sensor according to an aspect of the above-described embodiments, the barium titanate nanowire is a surface-modified barium titanate nanowire.
In the preparation method of the dielectric layer for the flexible pressure sensor provided by one aspect of the above embodiments, the volume ratio of the polystyrene microspheres to the polymer matrix material is 2: 1-4: 1.
In the method for manufacturing a dielectric layer for a flexible pressure sensor according to an aspect of the above-described embodiments, the ceramic material is filled in an amount of 5 wt% to 20 wt% of the polymer matrix material.
In the method for manufacturing a dielectric layer for a flexible pressure sensor provided in one aspect of the above embodiments, a volume ratio of the polymer matrix material to the curing agent is 10: 1.
According to another aspect of the embodiments of the present invention, there is provided a dielectric layer for a flexible pressure sensor, which is prepared by the above preparation method.
According to still another aspect of an embodiment of the present invention, there is provided a flexible pressure sensor including a first electrode layer, a second electrode layer, and the above-described dielectric layer, the first electrode layer and the second electrode layer being disposed to face each other, the dielectric layer being sandwiched between the first electrode layer and the second electrode layer.
Has the advantages that: in the preparation process of the dielectric layer, the dielectric layer with a three-dimensional porous structure is obtained by utilizing the sacrificial material, and the three-dimensional porous structure can ensure that the dielectric layer has higher porosity and is easier to deform under the action of stress, so that the dielectric layer has excellent elastic performance. Furthermore, the dielectric layer of the three-dimensional porous structure is filled with a ceramic material with a high dielectric constant and a high aspect ratio, and due to the characteristics of the ceramic material, the flexible pressure sensor based on the dielectric layer has higher sensitivity and a wider detection range, which is beneficial to improving the performance of the flexible pressure sensor.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a flow chart of a method of making a dielectric layer for a flexible pressure sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a flexible pressure sensor according to an embodiment of the invention.
Detailed Description
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
As used herein, the term "include" and its variants mean open-ended terms in the sense of "including, but not limited to. The terms "based on," based on, "and the like mean" based at least in part on, "" based at least in part on. The terms "one embodiment" and "an embodiment" mean "at least one embodiment". The term "another embodiment" means "at least one other embodiment". The terms "first," "second," and the like may refer to different or the same object. Other definitions, whether explicit or implicit, may be included below. The definition of a term is consistent throughout the specification unless the context clearly dictates otherwise.
As mentioned in the background, the dielectric layer of a flexible pressure sensor is usually a polymer material, which is not conducive to deformation of the dielectric layer with changes in stress due to the limitation of the elastic properties of the material itself. Therefore, in order to improve the elastic properties of the dielectric layer, a method for preparing a dielectric layer for a flexible pressure sensor is provided according to an embodiment of the present invention. The preparation method comprises the following steps: forming a cured film using a sacrificial material and a polymer matrix material; and placing the solidified film in a sacrificial material removing solution to remove the sacrificial material, thereby forming the dielectric layer with a three-dimensional porous structure.
Therefore, the dielectric layer with the three-dimensional porous structure is prepared by utilizing the sacrificial material, and the three-dimensional porous structure has higher porosity, so that the dielectric layer is easier to deform under the action of stress and has excellent elastic performance.
A dielectric layer for a flexible pressure sensor and a method for manufacturing the same according to embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
FIG. 1 is a flow chart of a method of making a dielectric layer for a flexible pressure sensor according to an embodiment of the present invention.
Referring to fig. 1, in step S110, a cured film is formed using a sacrificial material and a polymer matrix material.
In one example, a method of implementing step S110 may include:
firstly, uniformly dispersing the sacrificial material, the ceramic material and the polymer matrix material in an organic solvent to form a first mixed solution;
secondly, heating the first mixed solution to evaporate the organic solvent to remove, thereby forming a mixture;
finally, a curing agent is added to the mixture to form a cured mixture, and the cured film is formed using the cured product.
In another example, the method of implementing step S110 may further include:
firstly, uniformly dispersing the sacrificial material in an organic solvent to form a second mixed solution;
secondly, coating the second mixed solution on a substrate, and heating the substrate to evaporate and remove the organic solvent so as to form a first film;
further, forming a prepolymer using a ceramic material, the polymer matrix material, and a curing agent;
finally, the prepolymer is coated on the first film to form the cured film.
In step S120, the cured thin film is placed in a sacrificial material removal solution to remove the sacrificial material, thereby forming a dielectric layer having a three-dimensional porous structure.
In one example of the preparation method shown in fig. 1, the ceramic material is barium titanate nanowires, the polymer matrix material includes one of polydimethylsiloxane, polyurethane, polyimide, and polyvinyl alcohol, and the sacrificial material is polystyrene microspheres.
In one example of the preparation method shown in fig. 1, the barium titanate nanowire is a surface-modified barium titanate nanowire. Further, the barium titanate nanowire is subjected to surface modification through a silane coupling agent kh-550. Here, the surface modification of the barium titanate nanowire has an effect of enabling the doped barium titanate nanowire to have better dispersibility in the polymer matrix material, so that the barium titanate nanowire and the polymer matrix material have better compatibility. In addition, the barium titanate nanowire has high dielectric constant and high aspect ratio, and the characteristics can enable the flexible pressure sensor based on the dielectric layer to have higher sensitivity and wider detection range, thereby being beneficial to improving the performance of the flexible pressure sensor.
In one example of the preparation method shown in fig. 1, the volume ratio of the polystyrene microspheres to the polymer matrix material is 2: 1-4: 1. By using the polystyrene microspheres as sacrificial materials, the dielectric layer film with a three-dimensional porous structure can be constructed. In the preparation process, the porosity of the dielectric layer can be controlled by controlling the volume ratio of the polystyrene microspheres to the polymer matrix material, according to the formula: p0=Va/Va+VbWherein V isaVolume of polystyrene microsphere as sacrificial material, VbVolume of polymer matrix material, P0The porosity of the obtained dielectric layer.
In one example of the manufacturing method shown in fig. 1, the loading amount of the ceramic material is 5 wt% to 20 wt% of the polymer matrix material.
In one example of the preparation method shown in fig. 1, the volume ratio of the polymer matrix material to the curing agent is 10: 1.
In one example of the preparation method shown in fig. 1, the organic solvent is isopropanol.
In one example of the preparation method shown in fig. 1, the sacrificial material removal solution is DMF, i.e., N-dimethylformamide.
The following will explain the production method shown in FIG. 1 in more detail by way of more specific examples.
Example 1
The method for preparing a dielectric layer for a flexible pressure sensor according to embodiment 1 of the present invention includes:
the method comprises the following steps: preparing a mixed solution of barium titanate nanowires subjected to surface modification by kh-550, polystyrene microspheres and isopropanol, uniformly dispersing the mixed solution by an ultrasonic method, and adding polydimethylsiloxane to form a first mixed solution. Wherein, the volume ratio of the polystyrene microsphere to the polydimethylsiloxane is 3:1, namely the porosity is 75%, and the filling amount of the barium titanate nanowire is 5 wt% of the polydimethylsiloxane.
Step two: the uniformly mixed first mixed solution is placed in a vacuum oven and is subjected to heating treatment at a temperature of 60 ℃ to evaporate the organic solvent (isopropanol) in the system to dryness to form a mixture.
Step three: a curing agent is added to the mixture to form a cured mixture. Wherein the volume ratio of the polydimethylsiloxane to the curing agent is 10: 1.
Step four: the obtained cured mixture was uniformly coated on a glass substrate with a doctor blade, and heat-cured at a temperature of 70 ℃ for 3 hours to form a cured film.
Therefore, the above-mentioned steps one to four implement the method of step S110 in fig. 1.
Step five: and removing the cured film from the substrate, and soaking the cured film in a DMF (dimethyl formamide) solution for 12 hours to completely etch the polystyrene microspheres to obtain the dielectric layer of barium titanate-polydimethylsiloxane with a three-dimensional porous structure. Thus, this step five implements the method of step S120 in fig. 1.
Example 2
The method for preparing a dielectric layer for a flexible pressure sensor according to embodiment 2 of the present invention includes:
the method comprises the following steps: preparing a mixed solution of barium titanate nanowires subjected to surface modification by kh-550, polystyrene microspheres and isopropanol, uniformly dispersing the mixed solution by an ultrasonic method, and adding polydimethylsiloxane to form a first mixed solution. Wherein, the volume ratio of the polystyrene microsphere to the polydimethylsiloxane is 3:1, namely the porosity is 75%, and the filling amount of the barium titanate nanowire is 10 wt% of the polydimethylsiloxane.
Step two: the uniformly mixed first mixed solution is placed in a vacuum oven and is subjected to heating treatment at a temperature of 60 ℃ to evaporate the organic solvent (isopropanol) in the system to dryness to form a mixture.
Step three: a curing agent is added to the mixture to form a cured mixture. Wherein the volume ratio of the polydimethylsiloxane to the curing agent is 10: 1.
Step four: the obtained cured mixture was uniformly coated on a glass substrate with a doctor blade, and heat-cured at a temperature of 70 ℃ for 3 hours to form a cured film.
Therefore, the above-mentioned steps one to four implement the method of step S110 in fig. 1.
Step five: and removing the cured film from the substrate, and soaking the cured film in a DMF (dimethyl formamide) solution for 12 hours to completely etch the polystyrene microspheres to obtain the dielectric layer of barium titanate-polydimethylsiloxane with a three-dimensional porous structure. Thus, this step five implements the method of step S120 in fig. 1.
Example 3
The method for preparing a dielectric layer for a flexible pressure sensor according to embodiment 3 of the present invention includes:
the method comprises the following steps: preparing a mixed solution of barium titanate nanowires subjected to surface modification by kh-550, polystyrene microspheres and isopropanol, uniformly dispersing the mixed solution by an ultrasonic method, and adding polydimethylsiloxane to form a first mixed solution. Wherein, the volume ratio of the polystyrene microsphere to the polydimethylsiloxane is 3:1, namely the porosity is 75%, and the filling amount of the barium titanate nanowire is 20 wt% of the polydimethylsiloxane.
Step two: the uniformly mixed first mixed solution is placed in a vacuum oven and is subjected to heating treatment at a temperature of 60 ℃ to evaporate the organic solvent (isopropanol) in the system to dryness to form a mixture.
Step three: a curing agent is added to the mixture to form a cured mixture. Wherein the volume ratio of the polydimethylsiloxane to the curing agent is 10: 1.
Step four: the obtained cured mixture was uniformly coated on a glass substrate with a doctor blade, and heat-cured at a temperature of 70 ℃ for 3 hours to form a cured film.
Therefore, the above-mentioned steps one to four implement the method of step S110 in fig. 1.
Step five: and removing the cured film from the substrate, and soaking the cured film in a DMF (dimethyl formamide) solution for 12 hours to completely etch the polystyrene microspheres to obtain the dielectric layer of barium titanate-polydimethylsiloxane with a three-dimensional porous structure. Thus, this step five implements the method of step S120 in fig. 1.
Example 4
The preparation method of the dielectric layer for the flexible pressure sensor according to embodiment 4 of the present invention includes:
the method comprises the following steps: the polystyrene microspheres are uniformly dispersed in an isopropanol solution by ultrasonic treatment to form a second mixed solution.
Step two: the polystyrene microsphere-isopropanol mixed solution (second mixed solution) was coated on a glass substrate, and placed in an oven to be baked at a temperature of 60 ℃ for 8 hours to completely evaporate the organic solvent (isopropanol) to form a first film. Wherein the volume ratio of the polystyrene microspheres to the polydimethylsiloxane is 3:1, namely the porosity of the polymeric material is 75%.
Step three: and mechanically stirring the barium titanate nanowire subjected to surface modification by kh-550, polydimethylsiloxane and a curing agent uniformly to form a prepolymer. Wherein the filling amount of the barium titanate nanowire is 5 wt% of the polydimethylsiloxane, and the volume ratio of the polydimethylsiloxane to the curing agent is 10: 1.
Step four: the prepolymer was spin coated on the first film and placed in an oven to cure at a temperature of 70 ℃ for 3 hours to form a cured film.
Therefore, the above-mentioned steps one to four implement the method of step S110 in fig. 1.
Step five: and soaking the cured film in a DMF solution for 12 hours to remove the polystyrene microspheres, thereby obtaining the dielectric layer of the barium titanate-polydimethylsiloxane with the three-dimensional porous structure. Thus, this step five implements the method of step S120 in fig. 1.
Example 5
The preparation method of the dielectric layer for the flexible pressure sensor according to embodiment 5 of the present invention includes:
the method comprises the following steps: the polystyrene microspheres are uniformly dispersed in an isopropanol solution by ultrasonic treatment to form a second mixed solution.
Step two: the polystyrene microsphere-isopropanol mixed solution (second mixed solution) was coated on a glass substrate, and placed in an oven to be baked at a temperature of 60 ℃ for 8 hours to completely evaporate the organic solvent (isopropanol) to form a first film. Wherein the volume ratio of the polystyrene microspheres to the polydimethylsiloxane is 3:1, namely the porosity of the polymeric material is 75%.
Step three: and mechanically stirring the barium titanate nanowire subjected to surface modification by kh-550, polydimethylsiloxane and a curing agent uniformly to form a prepolymer. Wherein the filling amount of the barium titanate nanowire is 10 wt% of the polydimethylsiloxane, and the volume ratio of the polydimethylsiloxane to the curing agent is 10: 1.
Step four: the prepolymer was spin coated on the first film and placed in an oven to cure at a temperature of 70 ℃ for 3 hours to form a cured film.
Therefore, the above-mentioned steps one to four implement the method of step S110 in fig. 1.
Step five: and soaking the cured film in a DMF solution for 12 hours to remove the polystyrene microspheres, thereby obtaining the dielectric layer of the barium titanate-polydimethylsiloxane with the three-dimensional porous structure. Thus, this step five implements the method of step S120 in fig. 1.
Example 6
The method for preparing a dielectric layer for a flexible pressure sensor according to embodiment 6 of the present invention includes:
the method comprises the following steps: the polystyrene microspheres are uniformly dispersed in an isopropanol solution by ultrasonic treatment to form a second mixed solution.
Step two: the polystyrene microsphere-isopropanol mixed solution (second mixed solution) was coated on a glass substrate, and placed in an oven to be baked at a temperature of 60 ℃ for 8 hours to completely evaporate the organic solvent (isopropanol) to form a first film. Wherein the volume ratio of the polystyrene microspheres to the polydimethylsiloxane is 3:1, namely the porosity of the polymeric material is 75%.
Step three: and mechanically stirring the barium titanate nanowire subjected to surface modification by kh-550, polydimethylsiloxane and a curing agent uniformly to form a prepolymer. Wherein the filling amount of the barium titanate nanowire is 20 wt% of the polydimethylsiloxane, and the volume ratio of the polydimethylsiloxane to the curing agent is 10: 1.
Step four: the prepolymer was spin coated on the first film and placed in an oven to cure at a temperature of 70 ℃ for 3 hours to form a cured film.
Therefore, the above-mentioned steps one to four implement the method of step S110 in fig. 1.
Step five: and soaking the cured film in a DMF solution for 12 hours to remove the polystyrene microspheres, thereby obtaining the dielectric layer of the barium titanate-polydimethylsiloxane with the three-dimensional porous structure. Thus, this step five implements the method of step S120 in fig. 1.
The embodiment of the invention also provides a dielectric layer for the flexible pressure sensor, which is prepared by the preparation method.
FIG. 2 is a schematic diagram of a flexible pressure sensor according to an embodiment of the invention. It should be noted that in fig. 2, only two electrode layers and a dielectric layer of the flexible pressure sensor are shown, but those skilled in the art will know that the flexible pressure sensor also includes other necessary components.
Referring to fig. 2, the flexible pressure sensor includes at least: the dielectric layer 230 for the flexible pressure sensor is prepared by the first electrode layer 210, the second electrode layer 220 and the preparation method, wherein the first electrode layer 210 is arranged on a first surface of the dielectric layer 230, the second electrode layer 220 is respectively arranged on a second surface of the dielectric layer 230, and the first surface and the second surface are opposite to each other.
In this embodiment, the first electrode 210 and the second electrode 220 are connected to a wire 240, one end of the wire is connected to the electrode layer, and the other end of the wire can be connected to an external circuit.
In one example, the first electrode layer 210 and the second electrode layer 220 are both a PET conductive film or an ITO conductive film.
In summary, according to the preparation method of the dielectric layer for the flexible pressure sensor, the dielectric layer with the three-dimensional porous structure is obtained by using the sacrificial material in the preparation process, and the three-dimensional porous structure can enable the dielectric layer to have higher porosity and to be easier to deform under the stress action, so that the dielectric layer has excellent elastic performance. Furthermore, the dielectric layer of the three-dimensional porous structure is filled with a ceramic material with a high dielectric constant and a high aspect ratio, and due to the characteristics of the ceramic material, the flexible pressure sensor based on the dielectric layer has higher sensitivity and a wider detection range, which is beneficial to improving the performance of the flexible pressure sensor.
The foregoing description has described certain embodiments of this invention. Other embodiments are within the scope of the following claims.
The terms "exemplary," "example," and the like, as used throughout this specification, mean "serving as an example, instance, or illustration," and do not mean "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described technology. However, the techniques may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described embodiments.
Alternative embodiments of the present invention are described in detail with reference to the drawings, however, the embodiments of the present invention are not limited to the specific details in the above embodiments, and within the technical idea of the embodiments of the present invention, many simple modifications may be made to the technical solution of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the description is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A method of making a dielectric layer for a flexible pressure sensor, comprising:
forming a cured film using a sacrificial material and a polymer matrix material;
and placing the solidified film in a sacrificial material removing solution to remove the sacrificial material, thereby forming the dielectric layer with a three-dimensional porous structure.
2. The method of claim 1, wherein the forming a cured film from the sacrificial material and the polymer matrix material comprises:
uniformly dispersing the sacrificial material, the ceramic material and the polymer matrix material in an organic solvent to form a first mixed solution;
heating the first mixed solution to evaporate the organic solvent to form a mixture;
adding a curing agent to the mixture to form a cured mixture, and forming the cured film using the cured product.
3. The method of claim 1, wherein the forming a cured film from the sacrificial material and the polymer matrix material comprises:
uniformly dispersing the sacrificial material in an organic solvent to form a second mixed solution;
coating the second mixed solution on a substrate, and heating the substrate to evaporate and remove the organic solvent, thereby forming a first thin film;
forming a prepolymer using a ceramic material, the polymer matrix material, and a curing agent;
coating the prepolymer on the first film to form the cured film.
4. The method as claimed in claim 2 or 3, wherein the ceramic material is barium titanate nanowires, the polymer matrix material comprises one of polydimethylsiloxane, polyurethane, polyimide and polyvinyl alcohol, and the sacrificial material is polystyrene microspheres.
5. The method of manufacturing a dielectric layer for a flexible pressure sensor according to claim 2 or 3, wherein the barium titanate nanowire is a surface-modified barium titanate nanowire.
6. The method for preparing the dielectric layer for the flexible pressure sensor according to claim 2 or 3, wherein the volume ratio of the polystyrene microspheres to the polymer matrix material is 2: 1-4: 1.
7. The method of claim 2 or 3, wherein the ceramic material is filled in an amount of 5-20 wt% of the polymer matrix material.
8. The method of claim 2 or 3, wherein the volume ratio of the polymer matrix material to the curing agent is 10: 1.
9. A dielectric layer for a flexible pressure sensor formed by the production method as set forth in any one of claims 1 to 8.
10. A flexible pressure sensor comprising a first electrode layer, a second electrode layer and the dielectric layer of claim 9, the first electrode layer and the second electrode layer being disposed facing each other, the dielectric layer being sandwiched between the first electrode layer and the second electrode layer.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113932950A (en) * 2021-10-13 2022-01-14 中国科学院苏州纳米技术与纳米仿生研究所 Flexible pressure sensor and manufacturing method thereof
CN114469033A (en) * 2021-11-11 2022-05-13 煤炭科学研究总院 Heart rate detection sensor, protective clothing and manufacturing method of sensor
CN114878032A (en) * 2022-04-02 2022-08-09 华南理工大学 Flexible self-powered pressure sensor and preparation method and application thereof
CN114964573A (en) * 2022-05-17 2022-08-30 通富微电子股份有限公司 Pressure sensor and manufacturing method thereof
CN115725181A (en) * 2022-11-04 2023-03-03 深圳大学 Porous dielectric material, preparation method thereof and flexible capacitive pressure sensor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1304550A (en) * 1998-06-05 2001-07-18 佐治亚技术研究公司 Porous insulating compounds and method for making same
WO2008030939A2 (en) * 2006-09-06 2008-03-13 Innovia, Llc Porous polymeric material particularly suited for medical implant applications
CN102417363A (en) * 2011-08-02 2012-04-18 中国科学院化学研究所 Micron-nano-sized porous composite material and preparation method thereof
CN104257367A (en) * 2014-09-16 2015-01-07 苏州能斯达电子科技有限公司 Flexible pressure sensor with attaching function and preparation method thereof
CN105067159A (en) * 2015-07-22 2015-11-18 上海交通大学 Capacitive pressure sensor and preparing method thereof
CN106959176A (en) * 2017-05-10 2017-07-18 江西科技师范大学 A kind of pliable pressure sensor and preparation method thereof
CN110455443A (en) * 2019-08-23 2019-11-15 北京航空航天大学 A kind of flexible capacitive sensor and preparation method thereof using the preparation of silver nanowires flexible electrode
CN111307342A (en) * 2020-04-08 2020-06-19 深圳大学 High-temperature-resistant flexible pressure sensor and preparation method and application thereof
CN111780897A (en) * 2020-08-05 2020-10-16 吉林大学 Bionic multilayer capacitive flexible pressure sensor and preparation method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1304550A (en) * 1998-06-05 2001-07-18 佐治亚技术研究公司 Porous insulating compounds and method for making same
WO2008030939A2 (en) * 2006-09-06 2008-03-13 Innovia, Llc Porous polymeric material particularly suited for medical implant applications
CN102417363A (en) * 2011-08-02 2012-04-18 中国科学院化学研究所 Micron-nano-sized porous composite material and preparation method thereof
CN104257367A (en) * 2014-09-16 2015-01-07 苏州能斯达电子科技有限公司 Flexible pressure sensor with attaching function and preparation method thereof
CN105067159A (en) * 2015-07-22 2015-11-18 上海交通大学 Capacitive pressure sensor and preparing method thereof
CN106959176A (en) * 2017-05-10 2017-07-18 江西科技师范大学 A kind of pliable pressure sensor and preparation method thereof
CN110455443A (en) * 2019-08-23 2019-11-15 北京航空航天大学 A kind of flexible capacitive sensor and preparation method thereof using the preparation of silver nanowires flexible electrode
CN111307342A (en) * 2020-04-08 2020-06-19 深圳大学 High-temperature-resistant flexible pressure sensor and preparation method and application thereof
CN111780897A (en) * 2020-08-05 2020-10-16 吉林大学 Bionic multilayer capacitive flexible pressure sensor and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113932950A (en) * 2021-10-13 2022-01-14 中国科学院苏州纳米技术与纳米仿生研究所 Flexible pressure sensor and manufacturing method thereof
CN114469033A (en) * 2021-11-11 2022-05-13 煤炭科学研究总院 Heart rate detection sensor, protective clothing and manufacturing method of sensor
CN114878032A (en) * 2022-04-02 2022-08-09 华南理工大学 Flexible self-powered pressure sensor and preparation method and application thereof
CN114964573A (en) * 2022-05-17 2022-08-30 通富微电子股份有限公司 Pressure sensor and manufacturing method thereof
CN115725181A (en) * 2022-11-04 2023-03-03 深圳大学 Porous dielectric material, preparation method thereof and flexible capacitive pressure sensor

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