CN109932105A - Capacitance type pressure sensor and preparation method thereof - Google Patents
Capacitance type pressure sensor and preparation method thereof Download PDFInfo
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- CN109932105A CN109932105A CN201711350604.9A CN201711350604A CN109932105A CN 109932105 A CN109932105 A CN 109932105A CN 201711350604 A CN201711350604 A CN 201711350604A CN 109932105 A CN109932105 A CN 109932105A
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Abstract
The invention discloses a kind of capacitance type pressure sensors and preparation method thereof, the capacitance type pressure sensor includes hearth electrode, top electrode, first dielectric layer, second dielectric layer and two support portions, first dielectric layer, second dielectric layer, two support portions are respectively positioned between the hearth electrode and the top electrode, described two support zones are in the both ends of the hearth electrode, first dielectric layer, second dielectric layer is located between two support portions and the first dielectric layer is between the second dielectric layer and top electrode, the dielectric constant of second dielectric layer is greater than the dielectric constant of the first dielectric layer, first dielectric layer is air layer or film.Capacitance type pressure sensor provided by the invention passes through setting two layers of dielectric layer, the dielectric constant of capacitance type pressure sensor can be increased in this way, to increase the capacitance variation rate of capacitance type pressure sensor, the sensitivity and detection range of capacitance type pressure sensor are improved.
Description
Technical field
The present invention relates to pressure sensing fields more particularly to a kind of capacitance type pressure sensor and preparation method thereof.
Background technique
In recent years, as the development of flexible electronic, the sensitivity of pliable pressure sensor and detection range have very greatly
Promotion.The piezoelectric type pressure sensor based on Kynoar (PVDF) piezoelectric fabric, the inspection of most low energy has been made in Rogers etc.
Measure the slight pressure of 0.1Pa；The cenosphere film of poly pyrrole pressure drag type pressure capsule of the inventions such as Bao Zhenan 30Pa with
There is down 133kPa-1High sensitivity.But the production method of most of sensor is complicated, and cost is excessively high, cannot achieve batch
Production, while there is also the problem of repeatable difference, this brings huge problem to the practical application of pliable pressure sensor.
The pliable pressure sensor of mainstream has resistor-type, piezo-electric type, capacitive and optical-waveguide-type pressure sensor at present,
Middle flexible capacitive pressure sensor is examined because of its extremely low operating power consumption, detection signal stabilization in wearable device, medical treatment & health
Measurement equipment etc. has huge potential using value.Existing capacitance type pressure sensor is designed in dielectric layer side mostly
One layer of micro-structure so that dielectric layer is prone to longitudinal deformation, and then changes the spacing of capacitor two-plate, enables capacitor
Change.But be limited to the higher compression modulus of solid material, the amount of thickness reduction of dielectric layer is extremely limited, capacitance variation compared with
It is small, and material can not continue to compress after certain pressure range, capacitance is almost unchanged, causes capacitance type pressure sensor sensitive
It is relatively narrow to spend lower and detection range.
Summary of the invention
To solve the above-mentioned problems, the present invention proposes a kind of capacitance type pressure sensor and preparation method thereof, is able to ascend
Sensitivity increases detection range.
It is proposed by the present invention the specific technical proposal is: provide a kind of capacitance type pressure sensor, the capacitance type pressure passes
Sensor includes hearth electrode, top electrode, the first dielectric layer, the second dielectric layer and two support portions, and first dielectric layer, second are situated between
Electric layer, two support portions are respectively positioned between the hearth electrode and the top electrode, and described two support zones are in the hearth electrode
Both ends, first dielectric layer, second dielectric layer are located between described two support portions and first dielectric
For layer between second dielectric layer and the top electrode, the dielectric constant of second dielectric layer is greater than first dielectric
The dielectric constant of layer, first dielectric layer are air layer or film.
Further, the dielectric constant of second dielectric layer is 100~3000, dielectric loss is 0.001~2.
Further, second dielectric layer is made of substrate and the dielectric substance being filled in the substrate.
Further, the material of the substrate is selected from one of poly- dimethoxysilane, polyurethane, polytetrafluoroethylene (PTFE).
Further, the dielectric substance is selected from least one of graphene, carbon nanotube, ionic liquid.
Further, the material of the film is elastic polymer foam or aeroge.
Further, the upper surface of the film is rough face.
Further, second dielectric layer with a thickness of 50-200 microns and/or first dielectric layer with a thickness of
10-50 microns.
The present invention also provides a kind of preparation method of capacitance type pressure sensor, the preparation method includes following step
It is rapid:
One hearth electrode is provided；
Two support portions are bonded at the both ends of the hearth electrode；
The second dielectric layer is bonded on the hearth electrode by hot pressing technique, so that second dielectric layer is located at institute
It states between two support portions；
Top electrode, the air layer shape between the top electrode and second dielectric layer are bonded on described two support portions
At the first dielectric layer, or the adhering film on second dielectric layer, top electrode, the top are bonded on described two support portions
Film between electrode and second dielectric layer forms the first dielectric layer.
Further, second dielectric layer is obtained by below step:
Dielectric substance is added in organic solvent and is uniformly mixed, mixed solution is obtained；
Base material is added in the mixed solution, heating stirring dissolution obtains the second dielectric solution, and described second is situated between
The quality of dielectric substance described in electric solution accounts for the 1-10% of the quality of the dielectric substance and the base material；
On substrate by the second dielectric solution coating, it after organic solvent volatilization, is formed over the substrate
Second dielectric layer；
Second dielectric layer is removed from the substrate surface.
Capacitance type pressure sensor provided by the invention includes the first dielectric layer and the second dielectric layer, and the first dielectric layer is located at
Between second dielectric layer and top electrode, the dielectric constant of the first dielectric layer passes through setting less than the dielectric constant of the second dielectric layer
Two layers of dielectric layer, can increase the dielectric constant of capacitance type pressure sensor in this way, to increase capacitance type pressure sensor
Capacitance variation rate improves the sensitivity and detection range of capacitance type pressure sensor.
Detailed description of the invention
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing:
Fig. 1 is the structural schematic diagram of capacitance type pressure sensor in embodiment 1；
Fig. 2 is the relationship in embodiment 1 in the case of different-thickness between the change rate and pressure of capacitance；
Fig. 3 is the flow chart of the preparation method of capacitance type pressure sensor in embodiment 1；
Fig. 4 is the preparation technology figure of the second dielectric layer in embodiment 1:
Fig. 5 is the flow chart of the preparation method of capacitance type pressure sensor in embodiment 2.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
Embodiment 1
Referring to Fig.1, capacitance type pressure sensor provided in this embodiment includes hearth electrode 1, top electrode 2, the first dielectric layer
3, the second dielectric layer 4 and two support portions 5,4, two the first dielectric layer 3, the second dielectric layer support portions 5 be respectively positioned on hearth electrode 1 with
Between top electrode 2, two support portions 5 are located at the both ends of hearth electrode 1, and the first dielectric layer 3, the second dielectric layer 4 are located at two
Between support portion 5 and the first dielectric layer 3 is between the second dielectric layer 4 and top electrode 2, and the dielectric constant of the second dielectric layer 4 is big
In the dielectric constant of the first dielectric layer 3, the first dielectric layer 3 is air layer or film.
The material of top electrode 2 in the present embodiment is flexible material, applies pressure, 2 court of top electrode on the surface of top electrode 2
Close to the direction of hearth electrode 1, deformation occurs, the distance between top electrode 2 and hearth electrode 1 change, capacitance type pressure sensing
The capacitance of device changes, and the size of pressure value can be detected by the change of capacitance.
Specifically, the dielectric constant of the second dielectric layer 4 is 100~3000, and the dielectric loss of the second dielectric layer 4 is 0.001
~2.Second dielectric layer 4 is made of substrate 41 and the dielectric substance being filled in substrate.The material of substrate is selected from poly- dimethoxy
One of base silane, polyurethane, polytetrafluoroethylene (PTFE), the material of substrate is also possible to other high molecular materials, dielectric here
Material is selected from least one of graphene, carbon nanotube, ionic liquid, is occurred under the electric field by dielectric substance with substrate
Interfacial polarization, and then increase the dielectric constant of material.Preferably, in the present embodiment the second dielectric layer 4 it is micro- with a thickness of 50-200
Rice.
When first dielectric layer 3 is film, the material of film is elastic polymer foam or aeroge, and upper surface is rough
Face can reduce the adhesion strength between top electrode 2 and film in this way.Preferably, in the present embodiment the first dielectric layer 3 with a thickness of
10-50 microns.
Hearth electrode 1 is identical and equal sized as the shape of top electrode 2 in the present embodiment, and hearth electrode 1 includes leading with top electrode 2
Electric material and electrode basement, wherein the material of conductive material ITO, silver nanowires or copper nano-wire, electrode basement is selected from benzene two
One of formic acid glycol ester, poly- dimethoxysilane, polyurethane.
In order to enable top electrode 2 is easier, deformation occurs, the area of projection of the support portion 5 on hearth electrode 1 and top electrode 2
No more than the area of the top surface of hearth electrode 1, the area of the bottom surface of top electrode 2 1/10th.The material of support portion 5 is selected from poly- pair
One of ethylene terephthalate, poly- dimethoxysilane, polycarbonate, polyurethane foam, support portion 5 in the present embodiment
With a thickness of 50-200 microns, the shape of support portion 5 can be set according to actual needs, for example, for rectangle, rectangular, round
Or other shapes.
The calculation formula of the capacitor C of capacitance type pressure sensor in the present embodiment is as follows:
Wherein, A is the area of hearth electrode 1 and top electrode 2, ε1, ε2Respectively Jie of the first dielectric layer 3, the second dielectric layer 4
Electric constant, d1, d2The thickness of respectively the first dielectric layer 3, the second dielectric layer 4.
By taking the first dielectric layer 3 is air layer as an example, in pressurized process, the thickness of the first dielectric layer 3 changes.Assuming that
When top electrode 2 is uncompressed, the first dielectric layer 3 i.e. d equal with the thickness of the second dielectric layer 41=d2,2 quilt of top electrode
After compression, the dielectric constant of air layer is approximately 1, thenAssuming thatFor ε2Respectively 10,
100,1000 the second dielectric layer 4, initial capacitance value are respectivelyWhen being compressed to x=0.5, capacitance
C is respectively 1.67,1.96,1.99, and when being compressed to x=0.1, capacitance C is respectively 5,9.1,9.99, when complete compression
X=0, capacitance C are respectively 10,100,1000, it can be concluded that, the dielectric constant of the second dielectric layer 4 is got over from conclusion above
Greatly, capacitance C variation becomes apparent from, more sensitive to the response of pressure.Meanwhile with the reduction of x, capacitance C variation is more violent,
As shown in Fig. 2, the change rate of capacitance can be improved by the thickness for reducing by the first dielectric layer 3, and then improve low-pressure range
Sensitivity.First dielectric layer 3 is that the principle of film is similar to above, and which is not described herein again.
In the present embodiment the capacitor of capacitance type pressure sensor variation also with the elasticity modulus of the material of top electrode 2 and
Size is related.For PET higher for the elasticity modulus and lesser PDMS of elasticity modulus, the deformation of PET is relatively small, sensitive
It spends poor, is suitable for the wider occasion of pressure measurement range, PDMS deformation is larger, and sensitivity is higher, is suitable for measuring small pressure
Power.The thickness of top electrode 2 is thinner, length is bigger, and the longitudinal deformation of material under pressure becomes apparent from, and sensitivity is higher.
Referring to Fig. 3, the present embodiment additionally provides a kind of preparation method of capacitance type pressure sensor, the preparation method packet
Include following steps:
S1, a hearth electrode 1 is provided；
S2, two support portions 5 are bonded at the both ends of hearth electrode 1；
S3, the second dielectric layer 4 is bonded on hearth electrode 1 by hot pressing technique, so that the second dielectric layer 4 is located at two
Between support portion 5；
S4, it is bonded top electrode 2 on two support portions 5, air layer between top electrode 2 and the second dielectric layer 4 forms the
One dielectric layer 3.
Specifically, hearth electrode 1, top electrode 2 and support portion 5 are obtained by following method:
Take certain thickness macromolecule fexible film；
Oxygen plasma treatment macromolecule fexible film surface, keeps surface more hydrophilic, increases ethyl alcohol to wettability of the surface；
Spin coating, revolving speed 1000-2000rpm/ are carried out using the silver nanowires alcohol dispersion liquid that concentration is 1-5mg/ml
Min obtains nano-silver thread electrode with good conductivity using xenon flash lamp illumination annealing 1-5min after vacuum drying annealing；
Using electrode cutting at certain size as hearth electrode 1 and top electrode 2；
Use the method for cross cutting that 100-200 microns of thick macromolecule fexible films are cut into predetermined shape as support portion 5.
Referring to Fig. 4, specifically, the second dielectric layer 4 is obtained by below step:
Dielectric substance is added in a certain amount of organic solvent, ultrasonic 1-2h is uniformly mixed, and obtains mixed solution；
Base material is added in mixed solution, heating stirring dissolution, the second dielectric solution of acquisition, in the second dielectric solution
The quality of dielectric substance accounts for the 1-10% of the quality of dielectric substance and base material；
On substrate by the second dielectric solution spin coating or drop coating, the volatile organic solvent at 50-120 DEG C is placed in baking oven
The second dielectric layer is formed on the substrate in middle drying；
Second dielectric layer is removed from substrate surface.
Below by the process of the preparation method of detailed description capacitance type pressure sensor.
1) the second dielectric layer 4 is prepared
By in the carbon nano-tube modified a certain amount of DMF of addition of hydroxylating, ultrasonic 1-2h is evenly dispersed, obtains mixed solution；
Thermoplastic polyurethane elastomer is added, agitating and heating 1-2h dissolution obtains the second dielectric solution, the second dielectric
The carbon nano-tube modified quality of hydroxylating accounts for that hydroxylating is carbon nano-tube modified in solution and thermoplastic polyurethane elastomer is total
The 1-5% of quality；
On the glass substrate by spin coating or a certain amount of second dielectric solution of drop coating, the solvent flashing at 50-120 DEG C
Afterwards, it is placed in baking oven and dries residual solvent at 80 DEG C, form the second dielectric layer 4 on the glass substrate；
Configuration concentration is 0.1-1mol.L-1NaOH aqueous solution, the substrate of glass for being formed with the second dielectric layer 4 is put into
It takes out and is washed with deionized after impregnating 10-60S in NaOH aqueous solution, dry surface moisture, by the second dielectric layer 2 from glass
The sur-face peeling of substrate, wherein the second dielectric layer 2 with a thickness of 50-200 microns, dielectric constant 3000.
2) hearth electrode 1, top electrode 2 and support portion 5 are prepared
25-200 microns thick of PET films are taken, successively with acetone, ethyl alcohol, deionized water ultrasonic cleaning and are dried；
The surface of oxygen plasma treatment PET film keeps PET film more hydrophilic, increases wetting of the ethyl alcohol to surface；
The silver nanowires alcohol dispersion liquid that concentration is 1-5mg/ml is spun on to the surface of PET film, revolving speed 1000-
2000rpm/min obtains nano-silver thread electrode with good conductivity using xenon flash lamp illumination annealing 1-5min after vacuum drying；
Using nano-silver thread electrode cutting at certain size as hearth electrode 1 and top electrode 2；
100-200 microns of thick macromolecule membranes are cut to long 5-10mm, the strip of wide 0.5-1mm using the method for cross cutting
Shape is as support portion 5.
3) capacitance type pressure sensor is assembled
Support portion 5 is bonded in the designated position of hearth electrode 1 using epoxy glue；
The second dielectric layer 2 is attached to by hearth electrode 1 by hot pressing under the 100-200 degrees Celsius of pressure in 0.1-1Mpa
On, it is with epoxy resin that support portion 5 is be bonded with top electrode 2, obtain capacitance type pressure sensor.
Embodiment 2
Referring to Fig. 5, difference from example 1 is that the first dielectric layer 3 is film, capacitance type pressure passes the present embodiment
The preparation method of sensor the following steps are included:
S1, a hearth electrode 1 is provided；
S2, two support portions 5 are bonded at the both ends of hearth electrode 1；
S3, the second dielectric layer 4 is bonded on hearth electrode 1 by hot pressing technique, so that the second dielectric layer 4 is located at two
Between support portion 5；
S4, the adhering film on the second dielectric layer 4, are bonded top electrode 2 on two support portions 5, and top electrode 2 and second are situated between
Film between electric layer 4 forms the first dielectric layer 3.
Below by the process of the preparation method of detailed description capacitance type pressure sensor.
1) the second dielectric layer 4 is prepared
Reduced graphene is added in a certain amount of chloroform, ultrasonic 1-2h is evenly dispersed, obtains mixed solution；
Dimethyl silicone polymer host agent is added, the stirring 1-2h that is vortexed is uniformly dispersed, and curing agent is added, it is molten to obtain the second dielectric
Liquid, the quality of reduced graphene accounts for the 1- of reduced graphene and the total quality of dimethyl silicone polymer host agent in the second dielectric solution
5%；
A certain amount of second dielectric solution of spin coating on the silicon wafer by ATPES modified is placed in baking oven after solvent flashing
In solidify at 70 DEG C, the second dielectric layer 4 is formed on silicon wafer；
By the second dielectric layer 2 from the sur-face peeling of silicon wafer, wherein the second dielectric layer 2 with a thickness of 50-200 microns, dielectric
Constant is 800.
2) hearth electrode 1, top electrode 2 and support portion 5 are prepared
Dimethyl silicone polymer host agent and curing agent are uniformly mixed according to the ratio that mass ratio is 10:1, taken out in decompression true
Sky is lower to place 5-10min removing bubble, obtains dimethyl silicone polymer spin coating liquid；
The a certain amount of dimethyl silicone polymer spin coating liquid of spin coating on the silicon wafer by ATPES modified solidifies 2h at 70 DEG C
100-300 microns of thick PDMS films are obtained afterwards；
Oxygen plasma treatment PDMS film surface enhances PDMS surface hydrophilicity, increases wetting of the ethyl alcohol to surface
Property；
The silver nanowires alcohol dispersion liquid that concentration is 1-5mg/ml is spun on to the surface of PDMS film, revolving speed 1000-
2000rpm/min obtains nano-silver thread electrode with good conductivity using xenon flash lamp illumination annealing 1-5min after vacuum drying；
Using nano-silver thread electrode cutting at certain size as hearth electrode 1 and top electrode 2；
100-300 microns of thick macromolecule membranes are cut to long 5-10mm, the strip of wide 0.5-1mm using the method for cross cutting
Shape is as support portion 5；
Film is cut into predetermined shape as the first dielectric layer 3.
3) capacitance type pressure sensor is assembled
Support portion 5 is bonded in the designated position of hearth electrode 1 using epoxy glue；
The second dielectric layer 2 is attached to by hearth electrode 1 by hot pressing under the 100-200 degrees Celsius of pressure in 0.1-1Mpa
On；
The first dielectric layer 3 is bonded on the second dielectric layer 4；
It is with epoxy resin that support portion 5 is be bonded with top electrode 2, obtain capacitance type pressure sensor.
It should be noted that in the present specification, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of capacitance type pressure sensor, which is characterized in that including hearth electrode, top electrode, the first dielectric layer, the second dielectric layer
And two support portions, first dielectric layer, the second dielectric layer, two support portions are respectively positioned on the hearth electrode and the top electrode
Between, described two support zones are located in the both ends of the hearth electrode, first dielectric layer, second dielectric layer
Between described two support portions and first dielectric layer is between second dielectric layer and the top electrode, and described second
The dielectric constant of dielectric layer is greater than the dielectric constant of first dielectric layer, and first dielectric layer is air layer or film.
2. capacitance type pressure sensor according to claim 1, which is characterized in that the dielectric constant of second dielectric layer
It is 0.001~2 for 100~3000, dielectric loss.
3. capacitance type pressure sensor according to claim 2, which is characterized in that second dielectric layer is by substrate and fills out
Fill the dielectric substance composition in the substrate.
4. capacitance type pressure sensor according to claim 3, which is characterized in that the material of the substrate is selected from poly- diformazan
One of oxysilane, polyurethane, polytetrafluoroethylene (PTFE).
5. capacitive pressure transducer according to claim 4, which is characterized in that the dielectric substance be selected from graphene,
At least one of carbon nanotube, ionic liquid.
6. capacitance type pressure sensor according to claim 1, which is characterized in that the material of the film is elastic high score
Sub- foam or aeroge.
7. capacitance type pressure sensor according to claim 6, which is characterized in that the upper surface of the film is rough
Face.
8. capacitance type pressure sensor according to claim 1, which is characterized in that second dielectric layer with a thickness of
50-200 microns and/or first dielectric layer with a thickness of 10-50 microns.
9. a kind of preparation method of capacitance type pressure sensor, which comprises the following steps:
One hearth electrode is provided；
Two support portions are bonded at the both ends of the hearth electrode；
The second dielectric layer is bonded on the hearth electrode by hot pressing technique, so that second dielectric layer is located at described two
Between a support portion；
Top electrode is bonded on described two support portions, air layer between the top electrode and second dielectric layer forms the
One dielectric layer, or the adhering film on second dielectric layer, are bonded top electrode, the top electrode on described two support portions
Film between second dielectric layer forms the first dielectric layer.
10. preparation method according to claim 9, which is characterized in that second dielectric layer is obtained by below step:
Dielectric substance is added in organic solvent and is uniformly mixed, mixed solution is obtained；
Base material is added in the mixed solution, heating stirring dissolution obtains the second dielectric solution, and second dielectric is molten
The quality of dielectric substance described in liquid accounts for the 1-10% of the quality of the dielectric substance and the base material；
On substrate by the second dielectric solution coating, after organic solvent volatilization, second is formed over the substrate
Dielectric layer；
Second dielectric layer is removed from the substrate surface.
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| CN110470703A (en) * | 2019-08-21 | 2019-11-19 | 济南大学 | One kind being based on the capacitance type humidity sensor and its preparation method and application of " arch " structure |
| CN110916621A (en) * | 2019-11-28 | 2020-03-27 | 杭州电子科技大学 | Flexible sensor for detecting multiple physiological signals |
| CN111024296A (en) * | 2019-12-30 | 2020-04-17 | 浙江清华柔性电子技术研究院 | Pressure sensor and preparation method thereof |
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| CN110470703A (en) * | 2019-08-21 | 2019-11-19 | 济南大学 | One kind being based on the capacitance type humidity sensor and its preparation method and application of " arch " structure |
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| CN111044181B (en) * | 2019-12-19 | 2021-10-26 | 华南理工大学 | Gradient zero Poisson ratio structure capacitive flexible touch sensor and preparation method thereof |
| CN111044181A (en) * | 2019-12-19 | 2020-04-21 | 华南理工大学 | Gradient zero Poisson ratio structure capacitive flexible touch sensor and preparation method thereof |
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| CN111044183A (en) * | 2019-12-24 | 2020-04-21 | 浙江清华柔性电子技术研究院 | Flexible pressure sensor and preparation method thereof |
| CN111024296B (en) * | 2019-12-30 | 2023-11-28 | 浙江清华柔性电子技术研究院 | Pressure sensor and method for producing the same |
| CN111024296A (en) * | 2019-12-30 | 2020-04-17 | 浙江清华柔性电子技术研究院 | Pressure sensor and preparation method thereof |
| CN111855048A (en) * | 2020-07-20 | 2020-10-30 | 上海交通大学 | Sensor based on acoustic waveguide and manufacturing method |
| CN111855029B (en) * | 2020-07-24 | 2022-10-04 | 京东方科技集团股份有限公司 | Flexible pressure sensor, preparation method thereof and electronic device |
| CN111855029A (en) * | 2020-07-24 | 2020-10-30 | 京东方科技集团股份有限公司 | Flexible pressure sensor, preparation method thereof and electronic device |
| CN112577642A (en) * | 2020-12-08 | 2021-03-30 | 杭州电子科技大学 | Flexible touch sensor with accurate positioning stress and adjustable sensitivity |
| CN112577642B (en) * | 2020-12-08 | 2023-03-10 | 杭州电子科技大学 | Flexible touch sensor with accurate positioning stress and adjustable sensitivity |
| CN113670187A (en) * | 2021-09-06 | 2021-11-19 | 宁波韧和科技有限公司 | Capacitive elastic strain sensor with high safety and high detection range and preparation method thereof |
| CN113670187B (en) * | 2021-09-06 | 2022-09-20 | 宁波韧和科技有限公司 | Capacitive elastic strain sensor with high safety and high detection range and preparation method thereof |
| CN116625326A (en) * | 2023-07-20 | 2023-08-22 | 湖南大学 | High-linearity depth gauge for deep sea measurement |
| CN116625326B (en) * | 2023-07-20 | 2023-10-24 | 湖南大学 | High-linearity depth gauge for deep sea measurement |
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Application publication date: 20190625 |