CN111024296B - Pressure sensor and method for producing the same - Google Patents
Pressure sensor and method for producing the same Download PDFInfo
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- CN111024296B CN111024296B CN201911403189.8A CN201911403189A CN111024296B CN 111024296 B CN111024296 B CN 111024296B CN 201911403189 A CN201911403189 A CN 201911403189A CN 111024296 B CN111024296 B CN 111024296B
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011148 porous material Substances 0.000 claims abstract description 68
- 239000011159 matrix material Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 230
- 239000011259 mixed solution Substances 0.000 claims description 33
- VYFYYTLLBUKUHU-UHFFFAOYSA-N dopamine Chemical compound NCCC1=CC=C(O)C(O)=C1 VYFYYTLLBUKUHU-UHFFFAOYSA-N 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 239000002033 PVDF binder Substances 0.000 claims description 16
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 229960003638 dopamine Drugs 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 6
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 4
- 239000004088 foaming agent Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000009776 industrial production Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 18
- 239000004205 dimethyl polysiloxane Substances 0.000 description 10
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 10
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 9
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 238000004506 ultrasonic cleaning Methods 0.000 description 8
- 238000001291 vacuum drying Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- 238000009210 therapy by ultrasound Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000003361 porogen Substances 0.000 description 2
- -1 Polydimethylsiloxane Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention relates to a pressure sensor and a preparation method thereof, wherein the sensor comprises a medium layer, a first electrode layer and a second electrode layer which are arranged on two opposite sides of the medium layer, the medium layer comprises a matrix layer and a plurality of pore channels distributed in the matrix layer, the pore channels are communicated with the outside so that air in the pore channels can be discharged and sucked, and a piezoelectric film layer is attached to the pore walls of the pore channels. The pressure sensor has higher detection sensitivity through the combination of the holes and the piezoelectric film layer. Meanwhile, the invention also provides a preparation method of the pressure sensor, which is simple and suitable for industrial production.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor and a preparation method thereof.
Background
Currently, the method for improving the sensitivity of the capacitive flexible pressure sensor mainly comprises the following steps: the high-elasticity medium matrix with the porous structure is prepared, so that the sensor has high elasticity under the action of pressure, and the sensitivity of the capacitor under the pressure change is improved. However, a simple porous structure simply increases the elasticity of the dielectric substrate and changes the effective dielectric constant of the dielectric substrate upon air evacuation and inhalation, which is not the best way to effectively change the dielectric constant of the dielectric substrate.
Disclosure of Invention
Based on this, it is necessary to provide a pressure sensor and a method for manufacturing the same in view of the above-mentioned problems; the flexible pressure sensor has high sensitivity and simple preparation method.
The pressure sensor comprises a medium layer, a first electrode layer and a second electrode layer which are arranged on two opposite sides of the medium layer, wherein the medium layer comprises a matrix layer and a plurality of pore channels which are distributed in the matrix layer, the pore channels are communicated with the outside so that air in the pore channels can be discharged and sucked, and a piezoelectric film layer is attached to the wall of each pore channel.
In one embodiment, the thickness of the piezoelectric film layer is 20nm to 100nm.
In one embodiment, the width of the pore canal is 100 μm to 1mm.
In one embodiment, the piezoelectric material of the piezoelectric film layer comprises polyvinylidene fluoride.
In one embodiment, the thickness of the substrate layer is 1 mm-3 mm;
and/or the thickness of the first electrode layer is 20 nm-100 nm;
and/or the thickness of the second electrode layer is 20 nm-100 nm.
In one embodiment, a first adhesive layer is further disposed between the dielectric layer and the first electrode layer;
and/or a second bonding layer is arranged between the dielectric layer and the second electrode layer.
In one embodiment, the bonding material of the first bonding layer and/or the second bonding layer comprises at least one of dopamine and a silane coupling agent, and the thickness is 20 nm-100 nm.
A method of manufacturing a pressure sensor, comprising:
mixing a matrix material, a curing agent and a pore-foaming agent to obtain a mixture, and curing to obtain a prefabricated layer;
removing the pore-forming agent in the prefabricated layer to form pore channels in the prefabricated layer;
providing a mixed solution containing piezoelectric materials, placing the prefabricated layer with the pore canal in the mixed solution so that the mixed solution enters the pore canal and forms a piezoelectric film layer on the pore wall, and removing the surface layer of the prefabricated layer to form a matrix layer to obtain a medium layer;
and forming a first electrode layer and a second electrode layer on the surfaces of two opposite sides of the dielectric layer to obtain the pressure sensor.
In one embodiment, the porogen comprises sugar particles, salt particles, naHCO 3 Particles, NH 4 HCO 3 At least one of the particles, the pore-forming agent has a size of 100 μm to 1mm.
In one embodiment, before forming the first electrode layer on the surface of the dielectric layer, forming a first bonding layer on the surface of the dielectric layer;
and/or, before forming the second electrode layer on the surface of the dielectric layer, forming a second bonding layer on the surface of the dielectric layer.
The pressure sensor of the invention not only has a pore canal structure for air discharge and suction, but also has a piezoelectric film layer attached to the pore wall of the pore canal. Therefore, under the pressure action, the pressure sensor provided by the invention not only has the effect of changing the capacitance by discharging and sucking air, but also can change the dielectric constant of the piezoelectric film layer under the pressure action, so that the capacitance value is further changed, and the detection sensitivity of the pressure sensor is improved.
Meanwhile, the piezoelectric film layer can be formed on the pore wall of the pore canal through simple impregnation, and the preparation method is simple and suitable for industrial production.
Drawings
FIG. 1 is a schematic diagram of a pressure sensor according to the present invention;
fig. 2 is an enlarged view of the tunnel of fig. 1.
In the figure: 1. a dielectric layer; 11. a base layer; 12. a duct; 21. a first electrode layer; 22. a second electrode layer; 31. a first adhesive layer; 32. a second adhesive layer; 121. a piezoelectric thin film layer; 122. holes.
Detailed Description
The pressure sensor and the method for manufacturing the same provided by the invention will be further described below.
The capacitance of the capacitive flexible pressure sensor is equal to the product of the dielectric constant and the area of the dielectric layer divided by the thickness, and the formula is as follows:therefore, the capacitance of the capacitive flexible pressure sensor is determined by the dielectric constant, area and thickness of the dielectric layer, and the sensitivity of the capacitance determines the detection sensitivity of the flexible pressure sensor.
Therefore, as shown in fig. 1 and 2, the pressure sensor provided by the invention comprises a dielectric layer 1, and a first electrode layer 21 and a second electrode layer 22 arranged on two opposite sides of the dielectric layer 1, wherein the dielectric layer 1 comprises a substrate layer 11 and a plurality of pore channels 12 distributed in the substrate layer 11, the pore channels 12 are communicated with the outside so that air in the pore channels 12 can be discharged and sucked, and a piezoelectric film layer 121 is attached to the wall of the pore channels 12.
On the one hand, among the plurality of cells 12 distributed in the matrix layer 11, at least some cells 12 penetrate the matrix layer 11, while the remaining cells 12 are also in communication with this part of cells 12, so as to ensure that the air in all the cells 12 can be discharged and sucked in cyclically under pressure. Therefore, under the action of pressure, the pressure sensor has the function of changing the capacitance by discharging and sucking air, and improves the detection sensitivity.
On the other hand, a piezoelectric film layer 121 is also attached to the wall of the hole 12, and the piezoelectric film layer 121 has a piezoelectric effect, that is, the dielectric constant thereof will change under the action of pressure. Therefore, under the action of pressure, the piezoelectric film layer 12 not only can change the area A and the thickness d of the sensor, but also can change the dielectric constant epsilon of the dielectric layer 1, thereby improving the detection sensitivity of the sensor.
Therefore, the combination of the two functions enables the detection sensitivity of the pressure sensor to be higher.
Further, the thickness of the piezoelectric thin film layer 121 is too thin, and the dielectric constant of the dielectric layer 1 is slightly changed, and when the thickness is too thick, the space of the hole 122 is occupied, so that the effect of the hole 122 is weakened, and the flexibility of the dielectric layer 1 is reduced. Therefore, the thickness of the piezoelectric thin film layer 121 is preferably 20nm to 100nm.
The shape of the duct 12 may be circular, oval, square, etc., and is preferably circular. The width of the hole 12 is preferably 100 μm to 1mm in order to secure the space for the hole 122.
Also, in order to secure the flexibility of the pressure sensor of the present invention, the thickness of the base layer 11 is 1mm to 3mm, the thickness of the first electrode layer 21 is 20nm to 100nm, and the thickness of the second electrode layer 22 is 20nm to 100nm.
Further, the material of the base layer 11 is preferably Polydimethylsiloxane (PMDS). The piezoelectric material of the piezoelectric thin film layer 121 is preferably polyvinylidene fluoride (PVDF). The materials of the first electrode layer 21 and the second electrode layer 22 each include at least one of nano Ag, nano Au, nano Pt, nano Al, and nano Cu.
In the pressure sensor, if the adhesion between the dielectric layer and the surface electrode is weak, the internal resistance of the interface between the dielectric layer and the surface electrode is increased, the performance of the sensor is weakened, and when relative sliding occurs, the accuracy and the service life of the sensor test are seriously affected. Therefore, in the present invention, a first adhesive layer 31 is further provided between the dielectric layer 1 and the first electrode layer 21, and a second adhesive layer 32 is further provided between the dielectric layer 1 and the second electrode layer 22. Through the arrangement of the first bonding layer 31 and the second bonding layer 32, the bonding between the dielectric layer 1 and the first electrode layer 21 and the bonding between the dielectric layer 1 and the second electrode layer 22 are firmer, and the service life and the testing accuracy of the pressure sensor are ensured.
When the thickness of the first adhesive layer 31 and the second adhesive layer 32 is too small, holes are easily generated, the adhesion effect on the dielectric layer 1 and the first electrode layer 21 and the second electrode layer 22 is poor, and when the thickness is too large, the flexibility of the pressure sensor of the present invention is reduced. Therefore, the thickness of each of the first adhesive layer 31 and the second adhesive layer 32 in the present invention is preferably 20nm to 100nm.
Further, the bonding material of the first bonding layer 31 and the second bonding layer 32 includes at least one of dopamine and a silane coupling agent, preferably dopamine.
Therefore, the pressure sensor can not only improve the detection sensitivity of the pressure sensor, but also ensure the accuracy of the test and the service life.
The invention also provides a preparation method of the pressure sensor, which comprises the following steps:
s1, mixing a matrix material, a curing agent and a pore-foaming agent to obtain a mixture, and curing to obtain a prefabricated layer;
s2, removing the pore-forming agent in the prefabricated layer to form pore channels 12 in the prefabricated layer;
s3, providing a mixed solution containing piezoelectric materials, placing the prefabricated layer with the pore channels 12 in the mixed solution to enable the mixed solution to enter the pore channels 12 and form a piezoelectric film layer 121 on the pore walls, and removing the surface layer of the prefabricated layer to form a matrix layer 11 to obtain a medium layer 1;
and S4, forming a first electrode layer 21 and a second electrode layer 22 on the surfaces of the two opposite sides of the dielectric layer 1 to obtain the pressure sensor.
In step S1, the matrix material includes PDMS.
The pore-forming agent comprises sugar particles, salt particles and NaHCO 3 Particles, NH 4 HCO 3 At least one of the particles has a size of 100 μm to 1mm to ensure the width of the obtained cells 12.
The amount of the pore-forming agent determines the content of the pore channels 12 in the final dielectric layer 1, so that the amount of the pore-forming agent added in the mixture is determined by the distribution requirement of the pore channels 12, and preferably, the mass percentage of the pore-forming agent in the mixture is 40% -60%.
In addition, in order to secure the thickness of the base layer 11, a mold having a depth of 3mm to 5mm is provided. Placing the mixture into the mold, vacuumizing until no bubbles exist in the mixture, and preserving heat at 60-120 ℃ for 2-4 hours to fully solidify the mixture to obtain the prefabricated layer with the thickness of 3-5 mm.
In step S2, the method for removing the porogen from the preformed layer may be selected from: placing the prefabricated layer in deionized water solution, and ultrasonically cleaning for 4-6 hours at 25-80 ℃ to remove the pore-forming agent in the prefabricated layer.
In step S3, after the prefabricated layer with the pore canal 12 is placed in the mixed solution, the mixed solution enters the pore canal and wets the pore wall through ultrasonic treatment, the mixed solution in the pore canal is removed through centrifugal treatment, and a piezoelectric film layer is formed on the pore wall after drying.
Wherein the rotational speed of the centrifugal treatment is 800 r/min-2000 r/min for 30 s-1 min.
When the piezoelectric thin film layer 121 is prepared by placing the preformed layer with the channels 12 in the mixed liquid, the mixed liquid also forms a piezoelectric material layer on the surface of the preformed layer. Therefore, the surface layer of the pre-formed layer, including the surface layers of the upper and lower surfaces and the surface layers of the four peripheral sides, is removed by polishing or cutting to remove the formed piezoelectric material layer, thereby obtaining the base layer 11 having a thickness of 1mm to 3mm, and further obtaining the dielectric layer 1.
In step S4, a spin coating method may be used to spin-coat the suspension containing the electrode material on the surfaces of the two opposite sides of the dielectric layer 1 to form the first electrode layer 21 and the second electrode layer 22, where the spin-coating speed is 800 r/min-2000 r/min, and the time is 30S-60S.
Further, in order to increase the firmness of the dielectric layer 1 with respect to the first electrode layer 21 and the second electrode layer 22. Before forming the first electrode layer 21 on the surface of the dielectric layer 1, a first adhesive layer 31 is formed on the surface of the dielectric layer 1, and before forming the second electrode layer 22 on the surface of the dielectric layer 1, a second adhesive layer 32 is formed on the surface of the dielectric layer 1.
Also, a spin coating method may be used to spin-coat a solution containing a bonding material on the surfaces of the opposite sides of the dielectric layer 1 to form the first bonding layer 31 and the second bonding layer 32, wherein the spin-coating speed is 800r/min to 2000r/min for 30s to 60s.
Therefore, the piezoelectric film layer 121 can be formed on the hole wall of the hole 12 by simple impregnation, the first bonding layer 31 and the second bonding layer 32 can be formed on the surfaces of the two opposite sides of the dielectric layer 1 by a spin coating method, and the preparation method is simple and suitable for industrial production.
Hereinafter, the pressure sensor and the method of manufacturing the same will be further described by the following specific examples.
Example 1
10g of PDMS precursor, 1g of curing agent and 11g of 100 μm salt particles were mixed and stirred uniformly to obtain a mixture. The mixture is placed in a mold with the thickness of 3mm, placed in a vacuum drying oven, vacuumized until bubbles in the mixture disappear, the temperature of the vacuum drying oven is set to be 60 ℃, and the temperature is kept for 4 hours under the vacuum condition, so that PDMS is solidified and molded. Taking out the mould, and demoulding to obtain the prefabricated layer.
Placing the prefabricated layer in a beaker with deionized water, placing in an ultrasonic cleaning machine, setting the temperature to 25 ℃, and performing ultrasonic cleaning for 6 hours to remove salt particles in the prefabricated layer so as to form a pore channel of 100 micrometers in the prefabricated layer.
PVDF particles are fully dissolved by DMF solution to obtain mixed solution, and the mass of the mixed solution is 10g and 1g respectively. Soaking the prefabricated layer with the pore canal in the mixed solution, carrying out ultrasonic treatment for 2 hours to enable the mixed solution to fully enter the pore canal and wet the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 800r/min for 30s, removing the mixed solution in the pore canal, and then drying to form the PVDF film with the thickness of 100nm at the pore wall.
And (3) removing 1mm of each of the two sides of the prefabricated layer by polishing, and synchronously removing PVDF material layers on the four peripheral sides of the prefabricated layer to obtain a dielectric layer with the thickness of 1mm. Spin-coating dopamine solution and nano silver suspension on the surfaces of two opposite sides of the dielectric layer in sequence, wherein the rotating speed is 800r/min, the time is 30s, a dopamine layer with the thickness of 100nm and a metal silver electrode layer with the thickness of 100nm are formed, and after drying, the pressure sensor is obtained, and the sensitivity is 0.5kPa -1 。
Example 2
10g of PDMS precursor, 1g of curing agent and 11g of NH of 200 μm 4 HCO 3 The particles are mixed and stirred uniformly to obtain a mixture. The mixture is placed in a mould with the thickness of 4mm, placed in a vacuum drying oven, vacuumized until bubbles in the mixture disappear, the temperature of the vacuum drying oven is set to be 80 ℃, and the temperature is kept for 3 hours under the vacuum condition, so that the PDMS is solidified and molded. Taking out the mould, and demoulding to obtain the prefabricated layer.
Placing the prefabricated layer in a beaker with deionized water, placing in an ultrasonic cleaning machine, setting the temperature to 50 ℃, and performing ultrasonic cleaning for 5 hours to remove salt particles in the prefabricated layer so as to form a pore channel of 200 micrometers in the prefabricated layer.
PVDF particles are fully dissolved by DMF solution to obtain mixed solution, and the mass of the mixed solution is 10g and 1g respectively. Soaking the prefabricated layer with the pore canal in the mixed solution, carrying out ultrasonic treatment for 2 hours to enable the mixed solution to fully enter the pore canal and wet the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 1500r/min for 50s, removing the mixed solution in the pore canal, and then drying to form the PVDF film with the thickness of 50nm at the pore wall.
And (3) removing 1mm of each of the two sides of the prefabricated layer by polishing, and synchronously removing PVDF material layers on the four peripheral sides of the prefabricated layer to obtain a dielectric layer with the thickness of 2 mm. Spin-coating dopamine solution and nano copper suspension on the surfaces of two opposite sides of the dielectric layer in sequence, wherein the rotating speed is 1500r/min, the time is 50s, a dopamine layer with the thickness of 50nm and a metal copper electrode layer with the thickness of 50nm are formed, and after drying, the pressure sensor is obtained, and the sensitivity is 0.8kPa -1 。
Example 3
10g of PDMS precursor, 1g of curing agent and 11g of NaHCO 500 μm are mixed 3 The particles are mixed and stirred uniformly to obtain a mixture. Placing the mixture into a mold with the thickness of 5mm, placing into a vacuum drying oven, vacuumizing until bubbles in the mixture disappear, setting the temperature of the vacuum drying oven to be 100 ℃, and preserving the heat for 3 hours under the vacuum condition to solidify and shape the PDMS. Taking out the mould, and demoulding to obtain the prefabricated layer.
Placing the prefabricated layer in a beaker with deionized water, placing in an ultrasonic cleaning machine, setting the temperature to 60 ℃, and performing ultrasonic cleaning for 5 hours to remove salt particles in the prefabricated layer so as to form 500-micrometer pore channels in the prefabricated layer.
PVDF particles are fully dissolved by DMF solution to obtain mixed solution, and the mass of the mixed solution is 10g and 1g respectively. Soaking the prefabricated layer with the pore canal in the mixed solution, carrying out ultrasonic treatment for 2 hours to enable the mixed solution to fully enter the pore canal and wet the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 1200r/min for 50s, removing the mixed solution in the pore canal, and then drying to form the PVDF film with the thickness of 40nm at the pore wall.
And (3) removing 1mm of each of the two sides of the prefabricated layer by polishing, and synchronously removing PVDF material layers on the four peripheral sides of the prefabricated layer to obtain a dielectric layer with the thickness of 3 mm. Sequentially spin-coating silane coupling agent solution and nano gold suspension on the surfaces of two opposite sides of a dielectric layer, forming a dopamine layer with the thickness of 40nm and a metal gold electrode layer with the thickness of 40nm at the rotating speed of 1200r/min for 50s, drying to obtain a pressure sensor with the sensitivity of 1kPa -1 。
Example 4
10g of PDMS precursor, 1g of a curing agent and 11g of 1mm sugar were mixed and stirred uniformly to obtain a mixture. Placing the mixture into a mold with the thickness of 5mm, placing into a vacuum drying oven, vacuumizing until bubbles in the mixed solution disappear, setting the temperature of the vacuum drying oven to be 120 ℃, and preserving the heat for 2 hours under the vacuum condition to solidify and shape the PDMS. And taking out the mold, and demolding to obtain the prefabricated layer.
Placing the prefabricated layer in a beaker with deionized water, placing in an ultrasonic cleaning machine, setting the temperature to 80 ℃, and performing ultrasonic cleaning for 4 hours to remove salt particles in the prefabricated layer so as to form a pore canal of 1mm in the prefabricated layer.
PVDF particles are fully dissolved by DMF solution to obtain mixed solution, and the mass of the mixed solution is 10g and 1g respectively. Soaking the prefabricated layer with the pore canal in the mixed solution, carrying out ultrasonic treatment for 2 hours to enable the mixed solution to fully enter the pore canal and wet the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 2000r/min for 60s, removing the mixed solution in the pore canal, and then drying to form the PVDF film with the thickness of 20nm at the pore wall.
And (3) removing 1mm of each of the two sides of the prefabricated layer by cutting, and synchronously removing PVDF material layers on the four peripheral sides of the prefabricated layer to obtain a dielectric layer with the thickness of 3 mm. Spin-coating dopamine solution and nano platinum suspension on the surfaces of two opposite sides of the dielectric layer in sequence, wherein the rotating speed is 2000r/min, the time is 60s, a dopamine layer with the thickness of 20nm and a metal platinum electrode layer with the thickness of 20nm are formed, and after drying, the pressure sensor with the sensitivity of 1.5kPa is obtained -1 。
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The pressure sensor is characterized by comprising a medium layer, a first electrode layer and a second electrode layer, wherein the first electrode layer and the second electrode layer are arranged on two opposite sides of the medium layer, the medium layer comprises a substrate layer and a plurality of pore channels distributed in the substrate layer, the pore channels are communicated with the outside so that air in the pore channels can be discharged and sucked, a piezoelectric film layer is further attached to the pore walls of the pore channels, the thickness of the piezoelectric film layer is 20 nm-100 nm, and the width of the pore channels is 100 mu m-1 mm.
2. The pressure sensor of claim 1, wherein the piezoelectric film layer has a thickness of 100nm.
3. The pressure sensor of claim 1, wherein the width of the aperture is 100 μm.
4. The pressure sensor of claim 1, wherein the piezoelectric material of the piezoelectric film layer comprises polyvinylidene fluoride.
5. The pressure sensor of claim 1, wherein the base layer has a thickness of 1mm to 3mm;
and/or the thickness of the first electrode layer is 20 nm-100 nm;
and/or the thickness of the second electrode layer is 20 nm-100 nm.
6. The pressure sensor of any one of claims 1-5, wherein a first adhesive layer is further disposed between the dielectric layer and the first electrode layer;
and/or a second bonding layer is arranged between the dielectric layer and the second electrode layer.
7. The pressure sensor of claim 6, wherein the bonding material of the first bonding layer and/or the second bonding layer comprises at least one of dopamine and a silane coupling agent, and the thickness is 20 nm-100 nm.
8. A method of manufacturing a pressure sensor, comprising:
mixing a matrix material, a curing agent and a pore-foaming agent to obtain a mixture, and curing to obtain a prefabricated layer;
removing the pore-forming agent in the prefabricated layer to form pore channels in the prefabricated layer;
providing a mixed solution containing piezoelectric materials, placing the prefabricated layer with the pore canal in the mixed solution so that the mixed solution enters the pore canal and forms a piezoelectric film layer on the pore wall, and removing the surface layer of the prefabricated layer to form a matrix layer to obtain a medium layer;
and forming a first electrode layer and a second electrode layer on the surfaces of two opposite sides of the dielectric layer to obtain the pressure sensor.
9. The method for manufacturing a pressure sensor according to claim 8, wherein the pore-forming agent comprises at least one of sugar particles and salt particles, and the pore-forming agent has a size of 100 μm to 1mm.
10. The method for manufacturing a pressure sensor according to any one of claims 8 to 9, further comprising forming a first adhesive layer prior to the surface of the dielectric layer before forming the first electrode layer on the surface of the dielectric layer;
and/or, before forming the second electrode layer on the surface of the dielectric layer, forming a second bonding layer on the surface of the dielectric layer.
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