CN111024296A - Pressure sensor and preparation method thereof - Google Patents

Pressure sensor and preparation method thereof Download PDF

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Publication number
CN111024296A
CN111024296A CN201911403189.8A CN201911403189A CN111024296A CN 111024296 A CN111024296 A CN 111024296A CN 201911403189 A CN201911403189 A CN 201911403189A CN 111024296 A CN111024296 A CN 111024296A
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layer
pore
pressure sensor
electrode layer
thickness
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CN111024296B (en
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冯雪
王志建
杜琦峰
陈颖
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Tsinghua University
Institute of Flexible Electronics Technology of THU Zhejiang
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Tsinghua University
Institute of Flexible Electronics Technology of THU Zhejiang
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/14Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0007Fluidic connecting means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention relates to a pressure sensor and a preparation method thereof, wherein the sensor comprises a medium layer, a first electrode layer and a second electrode layer which are arranged on two opposite sides of the medium layer, the medium layer comprises a base layer and a plurality of pore canals distributed in the base layer, the pore canals are communicated with the outside so that air in the pore canals can be discharged and sucked, and piezoelectric film layers are attached to the pore walls of the pore canals. The pressure sensor of the invention has higher detection sensitivity through the combination of the holes and the piezoelectric film layer. Meanwhile, the invention also provides a preparation method of the pressure sensor, which is simple and suitable for industrial production.

Description

Pressure sensor and preparation method thereof
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor and a preparation method thereof.
Background
At present, the method for improving the sensitivity of the capacitive flexible pressure sensor mainly comprises the following steps: the high-elasticity dielectric substrate with a porous structure is prepared, so that the sensor has high elasticity under the action of pressure, and the sensitivity of the capacitor under the pressure change is improved. However, a simple porous structure merely increases the elasticity of the dielectric matrix and changes the effective dielectric constant of the dielectric matrix when air is exhausted and inhaled, and is not an optimal way to effectively change the dielectric constant of the dielectric matrix.
Disclosure of Invention
In view of the above, it is necessary to provide a pressure sensor and a method for manufacturing the same; the flexible pressure sensor has high sensitivity and a simple preparation method.
A pressure sensor comprises a medium layer, a first electrode layer and a second electrode layer, wherein the first electrode layer and the second electrode layer are arranged on two opposite sides of the medium layer, the medium layer comprises a base body layer and a plurality of pore passages distributed in the base body layer, the pore passages are communicated with the outside so that air in the pore passages can be discharged and sucked, and piezoelectric thin film layers are attached to the pore walls of the pore passages.
In one embodiment, the thickness of the piezoelectric thin film layer is 20nm to 100 nm.
In one embodiment, the width of the pore channel is 100 μm to 1 mm.
In one embodiment, the piezoelectric material of the piezoelectric thin film layer includes polyvinylidene fluoride.
In one embodiment, the thickness of the substrate layer is 1mm to 3 mm;
and/or the thickness of the first electrode layer is 20 nm-100 nm;
and/or the thickness of the second electrode layer is 20 nm-100 nm.
In one embodiment, a first bonding layer is further arranged between the dielectric layer and the first electrode layer;
and/or a second bonding layer is arranged between the dielectric layer and the second electrode layer.
In one embodiment, the adhesive material of the first adhesive layer and/or the second adhesive layer comprises at least one of dopamine and silane coupling agent, and the thickness is 20nm to 100 nm.
A method of making a pressure sensor, comprising:
mixing a matrix material, a curing agent and a pore-foaming agent to obtain a mixture, and curing to obtain a prefabricated layer;
removing the pore-forming agent in the preformed layer to form pores in the preformed layer;
providing a mixed liquid containing a piezoelectric material, placing the prefabricated layer with the pore passage in the mixed liquid, so that the mixed liquid enters the pore passage and forms a piezoelectric thin film layer on the pore wall, and removing the surface layer of the prefabricated layer to form a matrix layer so as to obtain a dielectric layer;
and forming a first electrode layer and a second electrode layer on the surfaces of two opposite sides of the dielectric layer to obtain the pressure sensor.
In one embodiment, the porogen comprises sugar particles, salt particles, NaHCO3Particles, NH4HCO3At least one of the particles, wherein the size of the pore-foaming agent is 100 mu m-1 mm.
In one embodiment, before forming the first electrode layer on the surface of the dielectric layer, forming a first bonding layer on the surface of the dielectric layer;
and/or forming a second bonding layer on the surface of the dielectric layer before forming the second electrode layer on the surface of the dielectric layer.
The pressure sensor of the invention not only has a pore channel structure for air exhaust and suction, but also has a piezoelectric film layer attached on the pore wall of the pore channel. Therefore, the pressure sensor not only has the function of changing the capacitance by exhausting and sucking air under the pressure action, but also changes the dielectric constant of the piezoelectric film layer under the pressure action, thereby further changing the capacitance value and improving the detection sensitivity of the pressure sensor.
Meanwhile, the piezoelectric film layer can be formed on the hole wall of the pore channel by simple dipping, and the preparation method is simple and suitable for industrial production.
Drawings
FIG. 1 is a schematic structural diagram of a pressure sensor according to the present invention;
figure 2 is an enlarged view of the cell of figure 1.
In the figure: 1. a dielectric layer; 11. a substrate layer; 12. a duct; 21. a first electrode layer; 22. a second electrode layer; 31. a first adhesive layer; 32. a second adhesive layer; 121. a piezoelectric thin film layer; 122. and (4) holes.
Detailed Description
The pressure sensor and the method for manufacturing the same according to the present invention will be further described below.
The capacitance of the capacitive flexible pressure sensor is equal to the product of the dielectric constant and the area of the dielectric layer divided by the thickness, and the formula is as follows:
Figure BDA0002347962060000031
therefore, the capacitance of the capacitive flexible pressure sensor is determined by the dielectric constant, area and thickness of the dielectric layer, and the sensitivity of the capacitance determines the detection sensitivity of the flexible pressure sensor.
Therefore, as shown in fig. 1 and fig. 2, the pressure sensor provided by the present invention includes a medium layer 1, and a first electrode layer 21 and a second electrode layer 22 which are disposed on two opposite sides of the medium layer 1, wherein the medium layer 1 includes a base layer 11 and a plurality of pores 12 distributed in the base layer 11, the pores 12 are communicated with the outside so that air in the pores 12 can be discharged and sucked, and a piezoelectric thin film layer 121 is further attached to a pore wall of the pores 12.
On the one hand, at least a part of the cells 12 of the plurality of cells 12 distributed in the matrix layer 11 penetrate through the matrix layer 11, and the rest of the cells 12 are communicated with the part of the cells 12, so as to ensure that the air in all the cells 12 can be circularly exhausted and sucked under the pressure. Therefore, under the action of pressure, the pressure sensor of the invention has the function of changing capacitance by exhausting and sucking air, thereby improving the detection sensitivity.
On the other hand, a piezoelectric film layer 121 is further attached to the hole wall of the pore 12, and the piezoelectric film layer 121 has a piezoelectric effect, that is, its dielectric constant changes under pressure. Therefore, under the action of pressure, the piezoelectric film layer 12 can change the area A and the thickness d of the sensor, and can also change the dielectric constant epsilon of the dielectric layer 1, thereby improving the detection sensitivity of the sensor.
Therefore, the detection sensitivity of the pressure sensor of the present invention is made higher by the combination of the two effects.
Further, the thickness of the piezoelectric thin film layer 121 is too thin, the contribution of the dielectric constant causes a small change in the dielectric constant of the whole dielectric layer 1, and when the thickness is too thick, the space of the holes 122 is occupied, the effect of the holes 122 is weakened, and the flexibility of the dielectric layer 1 is reduced. Therefore, the thickness of the piezoelectric thin film layer 121 is preferably 20nm to 100 nm.
The shape of the porthole 12 may be circular, oval, square, etc., preferably circular. In order to ensure the space for the holes 122, the width of the channel 12 is preferably 100 μm to 1 mm.
Also, in order to ensure the flexibility of the pressure sensor of the present invention, the thickness of the base layer 11 is 1mm to 3mm, the thickness of the first electrode layer 21 is 20nm to 100nm, and the thickness of the second electrode layer 22 is 20nm to 100 nm.
Further, the material of the base layer 11 is preferably Polydimethylsiloxane (PMDS). The piezoelectric material of the piezoelectric thin film layer 121 is preferably polyvinylidene fluoride (PVDF). The materials of the first electrode layer 21 and the second electrode layer 22 both include at least one of nano Ag, nano Au, nano Pt, nano Al, and nano Cu.
In the pressure sensor, if the dielectric layer and the surface electrode are not firmly bonded, the interface internal resistance of the dielectric layer and the surface electrode is increased, the performance of the sensor is weakened, and the accuracy and the service life of the sensor test are seriously influenced when relative slippage occurs. Therefore, in the present invention, a first adhesive layer 31 is further disposed between the dielectric layer 1 and the first electrode layer 21, and a second adhesive layer 32 is further disposed between the dielectric layer 1 and the second electrode layer 22. Through the arrangement of the first bonding layer 31 and the second bonding layer 32, the dielectric layer 1 can be bonded with the first electrode layer 21 and the second electrode layer 22 more firmly, and the service life and the test accuracy of the pressure sensor are ensured.
When the thicknesses of the first bonding layer 31 and the second bonding layer 32 are too thin, holes are easily generated, the bonding effect on the dielectric layer 1, the first electrode layer 21 and the second electrode layer 22 is not good, and when the thicknesses are too thick, the flexibility of the pressure sensor is reduced. Therefore, the thickness of each of the first adhesive layer 31 and the second adhesive layer 32 in the present invention is preferably 20nm to 100 nm.
Further, the adhesive material of the first adhesive layer 31 and the second adhesive layer 32 includes at least one of dopamine and silane coupling agent, preferably dopamine.
Therefore, the pressure sensor of the invention not only can improve the detection sensitivity of the pressure sensor, but also can ensure the accuracy of the test and the service life.
The invention also provides a preparation method of the pressure sensor, which comprises the following steps:
s1, mixing the matrix material, the curing agent and the pore-foaming agent to obtain a mixture, and curing to obtain a prefabricated layer;
s2, removing the pore-foaming agent in the prefabricated layer to form pore channels 12 in the prefabricated layer;
s3, providing a mixed solution containing piezoelectric materials, placing the prefabricated layer with the pore canal 12 in the mixed solution so that the mixed solution enters the pore canal 12 and forms a piezoelectric thin film layer 121 on the pore wall, and removing the surface layer of the prefabricated layer to form a base layer 11 so as to obtain a medium layer 1;
and S4, forming a first electrode layer 21 and a second electrode layer 22 on the surfaces of the two opposite sides of the dielectric layer 1 to obtain the pressure sensor.
In step S1, the matrix material includes PDMS.
The pore-forming agent comprises sugar particles, salt particles and NaHCO3Particles, NH4HCO3At least one of the particles, the size of which is between 100 μm and 1mm, in order to ensure the width of the obtained channels 12.
The content of the pore-foaming agent in the final dielectric layer 1 is determined by the amount of the pore-foaming agent, so the amount of the pore-foaming agent in the mixture is determined by the distribution requirement of the pore-foaming agent in the pore-foaming agent, and preferably, the mass percentage of the pore-foaming agent in the mixture is 40-60%.
In addition, in order to ensure the thickness of the substrate layer 11, a mold is provided, and the depth of the mold is 3 mm-5 mm. And placing the mixture in the mold, vacuumizing until no bubbles exist in the mixture, and then preserving the heat for 2 to 4 hours at the temperature of between 60 and 120 ℃ to fully solidify the mixture to obtain a prefabricated layer with the thickness of between 3 and 5 mm.
In step S2, the method for removing the porogen in the pre-formed layer may be selected from: and placing the prefabricated layer in a deionized water solution, and ultrasonically cleaning for 4-6 h at 25-80 ℃ to remove the pore-foaming agent in the prefabricated layer.
In step S3, after the preform layer with the pore passage 12 is placed in the mixed liquid, the mixed liquid enters the pore passage and wets the pore wall through ultrasonic treatment, the mixed liquid in the pore passage is removed through centrifugal treatment, and a piezoelectric thin film layer is formed on the pore wall after drying.
Wherein the rotating speed of the centrifugal treatment is 800 r/min-2000 r/min, and the time is 30 s-1 min.
When the pre-fabricated layer with the pore 12 is placed in the mixed solution to prepare the piezoelectric thin film layer 121, the mixed solution also forms a piezoelectric material layer on the surface of the pre-fabricated layer. Therefore, the surface layers of the prefabricated layer, including the surface layers on the upper and lower surfaces and the surface layers on the four peripheral sides, are removed by polishing or cutting to remove the formed piezoelectric material layer, so as to obtain the substrate layer 11 with the thickness of 1mm to 3mm, and further obtain the dielectric layer 1.
In step S4, a spin coating method may be used to spin coat electrode material-containing suspension on the surfaces of the two opposite sides of the dielectric layer 1 to form the first electrode layer 21 and the second electrode layer 22, wherein the spin coating speed is 800r/min to 2000r/min and the time is 30S to 60S.
Further, in order to increase the firmness of the dielectric layer 1 and the first and second electrode layers 21 and 22. Before the first electrode layer 21 is formed on the surface of the dielectric layer 1, a first adhesive layer 31 is formed on the surface of the dielectric layer 1, and before the second electrode layer 22 is formed on the surface of the dielectric layer 1, a second adhesive layer 32 is formed on the surface of the dielectric layer 1.
Similarly, a spin coating method can be adopted to spin coat a solution containing a bonding material on the surfaces of the two opposite sides of the dielectric layer 1 to form a first bonding layer 31 and a second bonding layer 32, wherein the spin coating speed is 800 r/min-2000 r/min and the time is 30 s-60 s.
Therefore, the piezoelectric thin film layer 121 can be formed on the hole wall of the pore channel 12 through simple dipping, the first bonding layer 31 and the second bonding layer 32 can be formed on the surfaces of the two opposite sides of the dielectric layer 1 through a spin coating method, the preparation method is simple, and the method is suitable for industrial production.
Hereinafter, the pressure sensor and the method for manufacturing the same will be further described with reference to the following specific examples.
Example 1
10g of PDMS pre-matrix, 1g of curing agent and 11g of salt particles of 100 μm were mixed and stirred uniformly to obtain a mixture. And placing the mixture into a mold with the thickness of 3mm, placing the mold into a vacuum drying oven, vacuumizing until bubbles in the mixture disappear, setting the temperature of the vacuum drying oven to be 60 ℃, and preserving heat for 4 hours under a vacuum condition to cure and mold the PDMS. And taking out the mold, and demolding to obtain the prefabricated layer.
And (3) placing the prefabricated layer in a beaker with deionized water, placing the beaker in an ultrasonic cleaning machine, setting the temperature at 25 ℃, carrying out ultrasonic cleaning for 6h, and removing salt particles in the prefabricated layer to form a pore channel with the diameter of 100 microns in the prefabricated layer.
PVDF particles were sufficiently dissolved in DMF to give a mixed solution, and the mass of each of the solution was 10g and 1 g. Soaking the prefabricated layer with the pore channel in the mixed liquid, carrying out ultrasonic treatment for 2h to ensure that the mixed liquid fully enters the pore channel and wets the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 800r/min for 30s, removing the mixed liquid in the pore channel, and then drying to form a PVDF film with the thickness of 100nm on the pore wall.
Removing 1mm from each of two surfaces of the prefabricated layer by polishing, and synchronously removing PVDF material layers on four peripheral side surfaces of the prefabricated layer to obtain the thicknessAnd the dielectric layer with the thickness of 1 mm. Sequentially spin-coating dopamine solution and nano-silver suspension on the surfaces of two opposite sides of the dielectric layer at the rotating speed of 800r/min for 30s to form a dopamine layer with the thickness of 100nm and a metal silver electrode layer with the thickness of 100nm, and drying to obtain the pressure sensor with the sensitivity of 0.5kPa-1
Example 2
10g of PDMS pre-matrix, 1g of curing agent and 11g of 200. mu.m NH4HCO3Mixing the granules, and stirring uniformly to obtain a mixture. And placing the mixture in a mold with the thickness of 4mm, placing the mold in a vacuum drying oven, vacuumizing until bubbles in the mixture disappear, setting the temperature of the vacuum drying oven at 80 ℃, and preserving heat for 3 hours under a vacuum condition to cure and mold the PDMS. And taking out the mold, and demolding to obtain the prefabricated layer.
And (3) placing the prefabricated layer in a beaker with deionized water, placing the beaker in an ultrasonic cleaning machine, setting the temperature at 50 ℃, carrying out ultrasonic cleaning for 5 hours, and removing salt particles in the prefabricated layer to form a pore channel with the diameter of 200 microns in the prefabricated layer.
PVDF particles were sufficiently dissolved in DMF to give a mixed solution, and the mass of each of the solution was 10g and 1 g. Soaking the prefabricated layer with the pore channel in the mixed liquid, carrying out ultrasonic treatment for 2h to ensure that the mixed liquid fully enters the pore channel and wets the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 1500r/min for 50s, removing the mixed liquid in the pore channel, and then drying to form a PVDF film with the thickness of 50nm on the pore wall.
And removing 1mm from each of two surfaces of the prefabricated layer by polishing, and synchronously removing the PVDF material layers on four peripheral side surfaces of the prefabricated layer to obtain the dielectric layer with the thickness of 2 mm. Sequentially spin-coating dopamine solution and nano-copper suspension on the surfaces of two opposite sides of the dielectric layer at the rotating speed of 1500r/min for 50s to form a dopamine layer with the thickness of 50nm and a metal copper electrode layer with the thickness of 50nm, and drying to obtain the pressure sensor with the sensitivity of 0.8kPa-1
Example 3
10g of PDMS pre-matrix, 1g of curing agent and 11g of 500. mu.m NaHCO3Mixing the granules, and stirring uniformly to obtain a mixture. Placing the mixture at a thickness of 5mAnd (3) placing the mixture in a mold of m in a vacuum drying oven, vacuumizing until bubbles in the mixture disappear, setting the temperature of the vacuum drying oven to be 100 ℃, and preserving heat for 3 hours under a vacuum condition to solidify and mold the PDMS. And taking out the mold, and demolding to obtain the prefabricated layer.
And (3) placing the prefabricated layer in a beaker with deionized water, placing the beaker in an ultrasonic cleaning machine, setting the temperature at 60 ℃, carrying out ultrasonic cleaning for 5 hours, and removing salt particles in the prefabricated layer to form a pore channel with the diameter of 500 micrometers in the prefabricated layer.
PVDF particles were sufficiently dissolved in DMF to give a mixed solution, and the mass of each of the solution was 10g and 1 g. Soaking the prefabricated layer with the pore passage in the mixed liquid, carrying out ultrasonic treatment for 2h to ensure that the mixed liquid fully enters the pore passage and wets the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 1200r/min for 50s, removing the mixed liquid in the pore passage, and then drying to form a PVDF film with the thickness of 40nm at the pore wall.
Removing 1mm from each of two surfaces of the prefabricated layer by polishing, and synchronously removing the PVDF material layers on four peripheral side surfaces of the prefabricated layer to obtain a dielectric layer with the thickness of 3 mm. Spin-coating silane coupling agent solution and nanogold suspension on the surfaces of two opposite sides of the dielectric layer in sequence at a rotation speed of 1200r/min for 50s to form a dopamine layer with the thickness of 40nm and a metal gold electrode layer with the thickness of 40nm, and drying to obtain the pressure sensor with the sensitivity of 1kPa-1
Example 4
10g of PDMS precursor, 1g of curing agent and 11g of 1mm sugar were mixed and stirred uniformly to obtain a mixture. And placing the mixture in a mold with the thickness of 5mm, placing the mold in a vacuum drying oven, vacuumizing until bubbles in the mixed solution disappear, setting the temperature of the vacuum drying oven at 120 ℃, and preserving heat for 2 hours under a vacuum condition to solidify and mold the PDMS. And taking out the mold, and demolding to obtain the prefabricated layer.
And (3) placing the prefabricated layer in a beaker with deionized water, placing the beaker in an ultrasonic cleaning machine, setting the temperature at 80 ℃, carrying out ultrasonic cleaning for 4 hours, and removing salt particles in the prefabricated layer to form a pore channel with the diameter of 1mm in the prefabricated layer.
PVDF particles were sufficiently dissolved in DMF to give a mixed solution, and the mass of each of the solution was 10g and 1 g. Soaking the prefabricated layer with the pore passage in the mixed liquid, carrying out ultrasonic treatment for 2h to ensure that the mixed liquid fully enters the pore passage and wets the pore wall, taking out the prefabricated layer, carrying out centrifugal treatment at the rotating speed of 2000r/min for 60s, removing the mixed liquid in the pore passage, and then drying to form a PVDF film with the thickness of 20nm at the pore wall.
And removing 1mm from each of two surfaces of the prefabricated layer by cutting, and synchronously removing the PVDF material layers on four peripheral side surfaces of the prefabricated layer to obtain the dielectric layer with the thickness of 3 mm. Sequentially spin-coating dopamine solution and nano platinum suspension on the surfaces of two opposite sides of the dielectric layer at the rotating speed of 2000r/min for 60s to form a dopamine layer with the thickness of 20nm and a metal platinum electrode layer with the thickness of 20nm, and drying to obtain the pressure sensor with the sensitivity of 1.5kPa-1
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A pressure sensor is characterized by comprising a medium layer, a first electrode layer and a second electrode layer, wherein the first electrode layer and the second electrode layer are arranged on two opposite sides of the medium layer, the medium layer comprises a base layer and a plurality of pore passages distributed in the base layer, the pore passages are communicated with the outside so that air in the pore passages can be discharged and sucked, and piezoelectric thin film layers are attached to the pore walls of the pore passages.
2. The pressure sensor of claim 1, wherein the thickness of the piezoelectric thin film layer is 20nm to 100 nm.
3. The pressure sensor of claim 1, wherein the width of the channel is 100 μm to 1 mm.
4. The pressure sensor of claim 1, wherein the piezoelectric material of the piezoelectric thin film layer comprises polyvinylidene fluoride.
5. The pressure sensor of claim 1, wherein the thickness of the base layer is 1mm to 3 mm;
and/or the thickness of the first electrode layer is 20 nm-100 nm;
and/or the thickness of the second electrode layer is 20 nm-100 nm.
6. The pressure sensor according to any one of claims 1 to 5, wherein a first bonding layer is further arranged between the dielectric layer and the first electrode layer;
and/or a second bonding layer is arranged between the dielectric layer and the second electrode layer.
7. The pressure sensor according to claim 6, wherein the adhesive material of the first adhesive layer and/or the second adhesive layer includes at least one of dopamine and a silane coupling agent, and has a thickness of 20nm to 100 nm.
8. A method of making a pressure sensor, comprising:
mixing a matrix material, a curing agent and a pore-foaming agent to obtain a mixture, and curing to obtain a prefabricated layer;
removing the pore-forming agent in the preformed layer to form pores in the preformed layer;
providing a mixed liquid containing a piezoelectric material, placing the prefabricated layer with the pore passage in the mixed liquid, so that the mixed liquid enters the pore passage and forms a piezoelectric thin film layer on the pore wall, and removing the surface layer of the prefabricated layer to form a matrix layer so as to obtain a dielectric layer;
and forming a first electrode layer and a second electrode layer on the surfaces of two opposite sides of the dielectric layer to obtain the pressure sensor.
9. The method of claim 8, wherein the porogen comprises sugar particles, salt particles, NaHCO3Particles, NH4HCO3At least one of the particles, wherein the size of the pore-foaming agent is 100 mu m-1 mm.
10. The method for manufacturing a pressure sensor according to any one of claims 8 to 9, further comprising forming a first bonding layer on the surface of the dielectric layer before forming the first electrode layer on the surface of the dielectric layer;
and/or forming a second bonding layer on the surface of the dielectric layer before forming the second electrode layer on the surface of the dielectric layer.
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CN111855029A (en) * 2020-07-24 2020-10-30 京东方科技集团股份有限公司 Flexible pressure sensor, preparation method thereof and electronic device
CN112255280A (en) * 2020-10-09 2021-01-22 海南大学 Preparation method of flexible and air-permeable sensor

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