CN110048613A - A kind of three level DCDC translation circuit of bi-directional half bridge - Google Patents

A kind of three level DCDC translation circuit of bi-directional half bridge Download PDF

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Publication number
CN110048613A
CN110048613A CN201910468528.4A CN201910468528A CN110048613A CN 110048613 A CN110048613 A CN 110048613A CN 201910468528 A CN201910468528 A CN 201910468528A CN 110048613 A CN110048613 A CN 110048613A
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CN
China
Prior art keywords
switching tube
switch
level
circuit
support capacitor
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Pending
Application number
CN201910468528.4A
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Chinese (zh)
Inventor
陈文强
葛愿
赵义永
李松涛
夏荣坤
王佳
徐阿强
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Wuhu Kang Ai Er Electric Co Ltd
Anhui Polytechnic University
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Wuhu Kang Ai Er Electric Co Ltd
Anhui Polytechnic University
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Application filed by Wuhu Kang Ai Er Electric Co Ltd, Anhui Polytechnic University filed Critical Wuhu Kang Ai Er Electric Co Ltd
Priority to CN201910468528.4A priority Critical patent/CN110048613A/en
Publication of CN110048613A publication Critical patent/CN110048613A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/3353Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483Converters with outputs that each can have more than two voltages levels
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The present invention discloses a kind of three level DCDC translation circuit of bi-directional half bridge, it is related to automatic control technology and power electronics field, including transformer, two lateral circuits of transformer are divided into primary circuit and secondary circuit, it connects respectively the first energy storage inductor and the second energy storage inductor at the transformer both ends, the voltage peak that the three each device for power switching of level DC/DC converter of bi-directional half bridge is born only has the half of two level rectifiers, reduce the voltage stress of power switch tube, preferably resolve the not high enough problem of the universal pressure resistance of switching device, the switching loss of two-way DC/DC converter more can be effectively reduced, improve the working efficiency of converter, improve the power density and dynamic property of converter, reduce the voltage stress of switching tube, the input voltage range of increasing circuit.Increased using three-level structure relative to two level output waveform ladders, at different levels amplitudes, which change, to be reduced, and sine wave can be more nearly.

Description

A kind of three level DCDC translation circuit of bi-directional half bridge
Technical field
The present invention relates to automatic control technologys and power electronics field, and in particular to a kind of three level of bi-directional half bridge DCDC translation circuit.
Background technique
Two-way DC/DC converter (Bi-directional DC/DC Converter), is to convert a kind of direct current energy At the converter of the direct current energy of another voltage value, which can adjust the flow direction of energy according to actual needs, Functionally it is equivalent to two Unidirectional direct-current-DC converters.In electric system, traffic system, aerospace system, electronic vapour The fields such as vehicle and Industry Control extensive utilization.
Existing DC/DC converter is generally unidirectional DC/DC converter, i.e. boost or depressurization, the two-way DC/ that minority uses DC converter is generally full-bridge DC/DC converter or two level half-bridge DC/DC converters.
Unidirectional DC/DC converter conversion regime is single, and power direction is single;Full-bridge DC/DC converter or two level half The voltage stress of the switching tube of bridge DC/DC converter is big, when voltage is higher, it is necessary to the higher switching device of pressure resistance is selected, Hardware cost is high.
Summary of the invention
The purpose of the present invention is to provide a kind of three level DCDC translation circuit of bi-directional half bridge, three level DC/ of bi-directional half bridge The voltage peak that each device for power switching of DC converter is born only has the half of two level rectifiers, reduces power switch The voltage stress of pipe preferably resolves the not high enough problem of the universal pressure resistance of switching device, two-way DC/DC more can be effectively reduced The switching loss of converter improves the working efficiency of converter, improves the power density and dynamic property of converter, reduces switch The voltage stress of pipe, the input voltage range of increasing circuit.Increased using three-level structure relative to two level output waveform ladders More, at different levels amplitudes, which change, to be reduced, and can be more nearly sine wave.
A kind of three level DCDC translation circuit of bi-directional half bridge, including
Transformer, two lateral circuits of transformer are divided into primary circuit and secondary circuit, and the transformer both ends are connected respectively First energy storage inductor and the second energy storage inductor;
In the primary circuit include the first DC power supply, first support electricity and the second Support Capacitor, the first DC power supply, First Support Capacitor, the second Support Capacitor are serially connected;
It further include first switch tube, second switch, third switching tube, the 4th switching tube in the primary circuit, first DC power supply, first switch tube, second switch, third switching tube, the 4th switching tube are serially connected;
First Support Capacitor, the second Support Capacitor and first switch tube, second switch, third switching tube, the 4th Paralleled power switches;
It further include the first freewheeling diode, the second freewheeling diode, first freewheeling diode in the primary circuit Anode connect the cathode of first switch tube, the cathode of second freewheeling diode connects the cathode of third switching tube, described second The anode of freewheeling diode connects the cathode of the first freewheeling diode, and the anode of the second freewheeling diode also connects the first Support Capacitor Cathode;
In the secondary circuit include the second DC power supply, third support electricity and the 4th Support Capacitor, the second DC power supply, Third Support Capacitor, the 4th Support Capacitor are serially connected;
It further include the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube in the secondary circuit, second DC power supply, the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube are serially connected;
The third Support Capacitor, the 4th Support Capacitor and the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th Switching tube, it is in parallel;
It further include third freewheeling diode, the 4th freewheeling diode, the third freewheeling diode in the secondary circuit Anode connect the cathode of the 5th switching tube, the cathode of the 4th freewheeling diode connects the cathode of the 7th switching tube, the described 4th The anode of freewheeling diode connects the cathode of third freewheeling diode, and the anode of the 4th freewheeling diode also connects third Support Capacitor Cathode.
Preferably, the transformer is intermediate-frequency transformer, and the no-load voltage ratio of transformer is 1:1.
Preferably, if the voltage triangles wave period of three level DCDC translation circuit of bi-directional half bridge output is Ts,
The first switch tube and third switching tube are the switching tube of a pair of complementary conducting, the second switch and the 4th The switching tube that switching tube is connected for a pair of of complementation, and the advanced 4th switch transistor T s/2 duration of first switch tube.
Preferably, the 5th switching tube and the 7th switching tube are the switching tube of a pair of complementary conducting, the 6th switch Manage the switching tube be connected with the 8th switching tube for a pair of of complementation, and the advanced 8th switch transistor T s/2 duration of the 5th switching tube.
Preferably, the three level DCDC translation circuit of bi-directional half bridge is controlled using bilateral duty ratio to realize output The control of voltage and the flowing of energy.
Preferably, the three level DCDC translation circuit of bi-directional half bridge is using former secondary side symmetrical structure, the primary side electricity Road is identical with the structure of secondary circuit.
The present invention has the advantages that being born using the three each device for power switching of level DC/DC converter of bi-directional half bridge Voltage peak there was only the half of two level rectifiers, reduce the voltage stress of power switch tube, preferably resolve switch The not high enough problem of the universal pressure resistance of device, more can be effectively reduced the switching loss of two-way DC/DC converter, improves converter Working efficiency improves the power density and dynamic property of converter, reduces the voltage stress of switching tube, the input electricity of increasing circuit Press range.Increased using three-level structure relative to two level output waveform ladders, at different levels amplitudes, which change, to be reduced, can be more Close to sine wave.
Detailed description of the invention
Fig. 1 obtains three level DC/DC translation circuit of bi-directional half bridge to be of the invention;
Fig. 2 is full-bridge, half-bridge compared with the voltage and current stress of half-bridge three-level;
Fig. 3 is control strategy figure of the invention;
Fig. 4 is operating mode schematic diagram of the invention;
Fig. 5 is emulation topological diagram of the invention;
Fig. 6 is the present inventionWhen output simulation result diagram;
Fig. 7 is the present inventionWhen output simulation result diagram;
Fig. 8 is the present inventionWhen output simulation result diagram;
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below with reference to Specific embodiment, the present invention is further explained.
As shown in Figures 1 to 8, a kind of three level DCDC translation circuit of bi-directional half bridge, including
Transformer, two lateral circuits of transformer are divided into primary circuit and secondary circuit, and the transformer both ends are connected respectively First energy storage inductor and the second energy storage inductor;
It include the first DC power supply V1, the first Support Capacitor C1 and the second Support Capacitor C2 in the primary circuit, first DC power supply V1, the first Support Capacitor C1, the second Support Capacitor C2 are serially connected;
It further include that first switch tube T11, second switch T12, third switch transistor T the 13, the 4th are opened in the primary circuit Close pipe T14, the first DC power supply V1, first switch tube T11, second switch T12, third switch transistor T 13, the 4th switching tube T14 is serially connected;
The first Support Capacitor C1, the second Support Capacitor C1 and first switch tube T11, second switch T12, third are opened It is in parallel to close pipe T13, the 4th switch transistor T 14;
It further include the first sustained diode 1, the second sustained diode 2, first afterflow two in the primary circuit The anode of pole pipe D1 connects the cathode of first switch tube T11, and the cathode of second sustained diode 2 connects third switch transistor T 13 Cathode, the anode of second sustained diode 2 connect the cathode of the first sustained diode 1, and the second sustained diode 2 Anode also connects the cathode of the first Support Capacitor C1;
In the secondary circuit include the second DC power supply V2, third Support Capacitor C3 and the 4th Support Capacitor C4, second DC power supply V2, third Support Capacitor C3, the 4th Support Capacitor C4 are serially connected;
Packet further includes the 5th switch transistor T 21, the 6th switch transistor T 22, the 7th switch transistor T the 23, the 8th in the secondary circuit Switch transistor T 24, the second DC power supply V2, the 5th switch transistor T 21, the 6th switch transistor T 22, the 7th switch transistor T 23, the 8th switching tube T24 is serially connected;
The third Support Capacitor C3, the 4th Support Capacitor C4 are opened with the 5th switch transistor T 21, the 6th switch transistor T the 22, the 7th It is in parallel to close pipe T23, the 8th switch transistor T 24;
Packet further includes third sustained diode 3, the 4th sustained diode 4, the third afterflow in the secondary circuit The anode of diode D3 connects the cathode of the 5th switch transistor T 21, and the cathode of the 4th sustained diode 4 connects the 7th switching tube The anode of cathode T23, the 4th sustained diode 4 connect the cathode of third sustained diode 3, and the 4th sustained diode 4 Anode also connect the cathode of third Support Capacitor C3.As shown in Fig. 2, under the premise item of transmitting equal-wattage, in full bridge structure In, the voltage stress of every switching tube is V1, current stress Io;In two level block of half-bridge, the voltage of every switching tube is answered Power is V1, current stress 2Io;In half-bridge three-level structure, the voltage stress of every switching tube is V1/2, current stress 2Io. In all identical situation of all conditions, the voltage stress of switching device is the half of full bridge structure in half-bridge three-level structure, The current stress of switching device is twice of full bridge structure in half-bridge three-level structure.That is identical switching tube is used, Half-bridge three-level structure can reduce current stress by increasing input voltage, to solve the universal pressure resistance of switching device not enough High problem.
The transformer is intermediate-frequency transformer, and the no-load voltage ratio of transformer is 1:1.
If the voltage triangles wave period of three level DCDC translation circuit of bi-directional half bridge output is Ts,
The first switch tube and third switching tube are the switching tube of a pair of complementary conducting, the second switch and the 4th The switching tube that switching tube is connected for a pair of of complementation, and the advanced 4th switch transistor T s/2 duration of first switch tube.
5th switching tube and the 7th switching tube are the switching tube of a pair of complementary conducting, the 6th switching tube and the 8th The switching tube that switching tube is connected for a pair of of complementation, and the advanced 8th switch transistor T s/2 duration of the 5th switching tube.T11 and T21 pipe accounts for Empty ratio is between Ts/2~Ts.
The three level DCDC translation circuit of bi-directional half bridge controls to realize output voltage using bilateral duty ratio The flowing of control and energy.The following steps are included: (in being described below, each circuit components are all with corresponding symbol replacement)
Switch state 1, t1~t2, corresponding diagram 4 (a), T11 and T12 conducting in primary side bridge arm, T13 and T14 shutdown, electricity Stream circulates by T11 and T12, and Vab exports positive level, secondary side bridge arm T22 and T23 conducting, and T21 and T24 shutdown, electric current pass through T23 circulates through D4, and Vcd is zero level.
Switch state 2, t2~t3, corresponding diagram 4 (b), T11 and T12 conducting in primary side bridge arm, T13 and T14 shutdown, electricity Stream circulates by T11 and T12, and Vab exports positive level, secondary side bridge arm T21 and T22 conducting, and T23 and T24 shutdown, electric current pass through T21 and T22 circulation is charged in this stage inductance L2 to C3, and Vcd exports positive level.
Switch state 3, t3~t4, corresponding diagram 4 (c), T11 and T12 conducting in primary side bridge arm, T13 and T14 shutdown, electricity Stream circulates by T11 and T12, and Vab exports positive level, secondary side bridge arm T21 and T22 conducting, and T23 and T24 shutdown, electric current pass through T21 and T22 circulation is charged in this stage inductance L1 to C1, and Vcd exports positive level.
Switch state 4, t4~t5, corresponding diagram 4 (d), T12 and T13 conducting in primary side bridge arm, T11 and T14 shutdown, electricity Stream circulates by T13 and D2, and Vab exports zero level, secondary side bridge arm T22 and T23 conducting, and T21 and T24 shutdown, electric current pass through D3 and T22 circulation, Vcd export zero level.
Switch state 5, t5~t6, corresponding diagram 4 (e), T13 and T14 conducting in primary side bridge arm, T11 and T12 shutdown, electricity Stream circulates by T13 and T14, and Vab exports negative level, secondary side bridge arm T22 and T23 conducting, and T21 and T24 shutdown, electric current pass through D3 and T22 circulation, Vcd export zero level.
Switch state 6, t6~t7, corresponding diagram 4 (f), T13 and T14 conducting in primary side bridge arm, T11 and T12 shutdown, electricity Stream circulates by T13 and T14, and Vab exports negative level, secondary side bridge arm T23 and T24 conducting, and T21 and T22 shutdown, electric current pass through T23 and T24 circulation, Vcd export negative level, charge in this stage inductance L2 to C4.
Switch state 7, t7~t8, corresponding diagram 4 (g), T13 and T14 conducting in primary side bridge arm, T11 and T12 shutdown, electricity Stream circulates by T13 and T14, and Vab exports negative level, secondary side bridge arm T23 and T24 conducting, and T21 and T22 shutdown, electric current pass through T23 and T24 circulation, Vcd export negative level, charge in this stage inductance L2 to C4.
Switch state 8, t0~t1, corresponding diagram 4 (h), T12 and T13 conducting in primary side bridge arm, T11 and T14 shutdown, electricity Stream circulates by T12 and D1, and Vab exports zero level, secondary side bridge arm T22 and T23 conducting, and T21 and T24 shutdown, electric current pass through T23 and D4 circulation, Vcd export zero level.
Primary side PI regulated value and the voltage triangles Bobbi of output relatively after signal be S14, secondary side PI regulated value and output Voltage triangles Bobbi relatively after signal be S24, by obtaining S11 and S21 to S14 and S24 phase shift half period.
Phase angle between S11 and S21The direction for determining flow of power, whenWhen, power is flowed to by primary side Secondary side, whenWhen, power flows to primary side by secondary side.
The three level DCDC translation circuit of bi-directional half bridge is using former secondary side symmetrical structure, the primary circuit and secondary side The structure of circuit is identical.Using former secondary side symmetrical structure, the liter of energy to two-way circulate with voltage is realized by control strategy Drop.
Specific embodiment and principle:
It in order to verify beneficial effects of the present invention, is verified using business PSCAD simulation software, emulation topological diagram is as schemed Shown in 5;
Input voltage V1=500V, Support Capacitor C1=C2=C3=C4=2500uF, energy storage inductor L1=L2=20uH, Load resistance R=50 Ω, driving signal frequency T=6.4KHZ carry out simulating, verifying, and Simulation Strategy is as shown in figure 3, simulation time For 1s, simulation step length 2us, the unit of voltage and current is kV and Ka;
S11=0.46Ts, S21=0.39Ts, i.e.,When, secondary side DC output voltage and three level square wave waves Shape and current waveform are as shown in Figure 6;
S11=0.46Ts, S21=0.29Ts, i.e.,When, secondary side DC output voltage and three level square wave waves Shape and current waveform are as shown in Figure 7;
S11=0.46Ts, S21=0.22Ts, i.e.,When, secondary side DC output voltage and three level square wave waves Shape and current waveform are as shown in Figure 8.
Conclusion: the present invention proposes a kind of new technical solution for the deficiency of existing DC/DC large power supply, passes through reason Feasibility of the invention is demonstrated by analysis and l-G simulation test, experimental phenomena is as shown, work asIt is constant in load when bigger In the case of, output DC voltage is being lifted, and is illustrated that output power is increasing, is demonstrated correctness of the invention.
Based on above-mentioned, what the present invention was born using the three each device for power switching of level DC/DC converter of bi-directional half bridge Voltage peak only has the half of two level rectifiers, reduces the voltage stress of power switch tube, preferably resolves derailing switch The not high enough problem of the universal pressure resistance of part, more can be effectively reduced the switching loss of two-way DC/DC converter, improves the work of converter Make efficiency, improve the power density and dynamic property of converter, reduces the voltage stress of switching tube, the input voltage of increasing circuit Range.Increased using three-level structure relative to two level output waveform ladders, at different levels amplitudes, which change, to be reduced, can more adjunction Nearly sine wave.
As known by the technical knowledge, the present invention can pass through the embodiment party of other essence without departing from its spirit or essential feature Case is realized.Therefore, embodiment disclosed above, in all respects are merely illustrative, not the only.Institute Have within the scope of the present invention or is included in the invention in the change being equal in the scope of the present invention.

Claims (6)

1. a kind of three level DCDC translation circuit of bi-directional half bridge, which is characterized in that including
Transformer, two lateral circuits of transformer are divided into primary circuit and secondary circuit, and the transformer both ends connect first respectively Energy storage inductor and the second energy storage inductor;
It include the first DC power supply, the first Support Capacitor and the second Support Capacitor, the first DC power supply, the in the primary circuit One Support Capacitor, the second Support Capacitor are serially connected;
It further include first switch tube, second switch, third switching tube, the 4th switching tube, the first direct current in the primary circuit Power supply, first switch tube, second switch, third switching tube, the 4th switching tube are serially connected;
First Support Capacitor, the second Support Capacitor and first switch tube, second switch, third switching tube, the 4th switch Pipe is in parallel;
It further include the first freewheeling diode, the second freewheeling diode in the primary circuit, first freewheeling diode is just Pole connects the cathode of first switch tube, and the cathode of second freewheeling diode connects the cathode of third switching tube, second afterflow The anode of diode connects the cathode of the first freewheeling diode, and the anode of the second freewheeling diode also connects the negative of the first Support Capacitor Pole;
It include the second DC power supply, third Support Capacitor and the 4th Support Capacitor, the second DC power supply, the in the secondary circuit Three Support Capacitors, the 4th Support Capacitor are serially connected;
It further include the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube, the second direct current in the secondary circuit Power supply, the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube are serially connected;
The third Support Capacitor, the 4th Support Capacitor and the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switch Pipe is in parallel;
It further include third freewheeling diode, the 4th freewheeling diode in the secondary circuit, the third freewheeling diode is just Pole connects the cathode of the 5th switching tube, and the cathode of the 4th freewheeling diode connects the cathode of the 7th switching tube, the 4th afterflow The anode of diode connects the cathode of third freewheeling diode, and the anode of the 4th freewheeling diode also connects the negative of third Support Capacitor Pole.
2. three level DCDC translation circuit of a kind of bi-directional half bridge according to claim 1, it is characterised in that: the transformer For intermediate-frequency transformer, and the no-load voltage ratio of transformer is 1:1.
3. three level DCDC translation circuit of a kind of bi-directional half bridge according to claim 1, it is characterised in that: set bi-directional half bridge The voltage triangles wave period of three level DCDC translation circuits output is Ts,
The first switch tube and third switching tube are the switching tube of a pair of complementary conducting, the second switch and the 4th switch The switching tube that pipe is connected for a pair of of complementation, and the advanced 4th switch transistor T s/2 duration of first switch tube.
4. three level DCDC translation circuit of a kind of bi-directional half bridge according to claim 3, it is characterised in that: the described 5th opens It closes pipe and the 7th switching tube is the switching tube of a pair of complementary conducting, the 6th switching tube and the 8th switching tube are that a pair of of complementation is led Logical switching tube, and the advanced 8th switch transistor T s/2 duration of the 5th switching tube.
5. three level DCDC translation circuit of a kind of bi-directional half bridge according to claim 1, it is characterised in that: described two-way half Three level DCDC translation circuit of bridge controls to realize the control of output voltage and the flowing of energy using bilateral duty ratio.
6. three level DCDC translation circuit of a kind of bi-directional half bridge according to claim 1, it is characterised in that: described two-way half For three level DCDC translation circuit of bridge using former secondary side symmetrical structure, the primary circuit is identical with the structure of secondary circuit.
CN201910468528.4A 2019-05-31 2019-05-31 A kind of three level DCDC translation circuit of bi-directional half bridge Pending CN110048613A (en)

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
CN110854886A (en) * 2019-11-29 2020-02-28 中冶南方都市环保工程技术股份有限公司 Control system and method based on energy storage device split-phase balance
CN111224553A (en) * 2020-03-09 2020-06-02 合肥博鳌电气科技有限公司 Improved bidirectional half-bridge three-level LLC direct-current converter and synchronous control method thereof
US20230179108A1 (en) * 2021-12-02 2023-06-08 Delta Electronics (Shanghai) Co., Ltd. Three-level rectification dc/dc converter
US11750103B2 (en) 2021-12-02 2023-09-05 Delta Electronics (Shanghai) Co., Ltd. Three-level rectification dc/dc converter

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Application publication date: 20190723