CN108988675A - A kind of single-phase non-isolated MOSFET gird-connected inverter - Google Patents
A kind of single-phase non-isolated MOSFET gird-connected inverter Download PDFInfo
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- CN108988675A CN108988675A CN201811163527.0A CN201811163527A CN108988675A CN 108988675 A CN108988675 A CN 108988675A CN 201811163527 A CN201811163527 A CN 201811163527A CN 108988675 A CN108988675 A CN 108988675A
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- switching tube
- diode
- inductance
- switch
- gird
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- 230000005764 inhibitory process Effects 0.000 abstract description 4
- 238000011084 recovery Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H02J3/383—
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0051—Diode reverse recovery losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides a kind of single-phase non-isolated MOSFET gird-connected inverter, including six switching tubes, two diodes, two diodes and two switching tubes are increased on the basis of full-bridge circuit, are suitable for photovoltaic generating system, disconnect photovoltaic panel and power grid in freewheeling period.Circuit of the present invention can in effective solution inversion link as do not use transformer and caused by common mode current leakage, simultaneously because freewheeling period electric current is not passed through body diode, therefore MOSFET element can be used, reduce the turn-off power loss as caused by tail currents when as IGBT device shutdown, and SiC diode can substitute general-purpose diode, the available good inhibition of the loss of Reverse recovery.Therefore circuit of the present invention can effectively inhibit common mode leakage current, while improve the efficiency of grid-connected system.
Description
Technical field
The present invention relates to photovoltaic combining inverter fields, and in particular to a kind of single-phase non-isolated MOSFET gird-connected inverter.
Background technique
Solar energy cleanliness without any pollution is very important a kind of new energy.Due to the incident photon-to-electron conversion efficiency of photovoltaic solar plate
It is lower, therefore the efficiency for improving photovoltaic combining inverter is particularly important.The common gird-connected inverter with Industrial Frequency Transformer,
Since the presence meeting of transformer is so that the efficiency of system reduces, and increases the price of inverter, simultaneously because Industrial Frequency Transformer
Volume is larger, it is difficult to install.And the grid-connected system with high frequency transformer, one-stage transfor-mation device is increased, efficiency is also difficult to mention
It rises.Therefore to improve system effectiveness, generally use transformerless gird-connected inverter, due to transless so that power grid with it is inverse
Become device and there is direct electrical connection, when, there are when distribution capacity, full-bridge inverter can generate larger between solar panels and ground
Common mode leakage current, harm is generated to human body, and inverter may be damaged.Therefore to the research of non-isolation type inverter topology by
Extensive concern is arrived.The H5 type topology of German SMA company, can efficiently solve current leakage, but due to freewheeling period
Electric current flows through body diode, therefore HF switch pipe uses IGBT, IGBT to will cause biggish since there are tail currents
Turn-off power loss.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of novel single-phase non-isolated MOSFET is proposed
Gird-connected inverter.
Single-phase non-isolated MOSFET gird-connected inverter of the invention a kind of specifically includes first switch tube, second switch, the
Three switching tubes, the 4th switching tube, the 5th switching tube, the 6th switching tube, first diode, the second diode, the first inductance, second
Inductance, direct current input capacitance.
The specific connection type of circuit of the present invention are as follows: one end of the positive and direct current input capacitance of DC bus, first open
The drain electrode for closing pipe is connected with the drain electrode of third switching tube.The other end of the cathode of DC bus and direct current input capacitance, second open
Close the source electrode connection of the source electrode and the 4th switching tube of pipe.The source electrode of first switch tube and the cathode of first diode and the 6th switch
The drain electrode of pipe connects.The source electrode of the anode of first diode and the 5th switching tube, the drain electrode of second switch and the second inductance
One end connection.The other end of second inductance is connect with power grid one end.The cathode of the source electrode of third switching tube and the second diode and
The drain electrode of 5th switching tube connects.One end and the 4th of the source electrode of the anode of second diode and the 6th switching tube, the first inductance
The drain electrode of switching tube connects.The other end of first inductance is connected with the other end of power grid.
Further, the switching tube is all made of the enhanced MOSFET of N-channel.
Compared with prior art, circuit of the present invention has the advantage that are as follows: can in effective solution inversion link due to not
Common mode current leakage caused by using transformer, simultaneously because freewheeling period electric current is not passed through body diode, therefore
MOSFET element can be used, and reduce the turn-off power loss as caused by tail currents when as IGBT device shutdown, and SiC bis-
Pole pipe can substitute general-purpose diode, the available good inhibition of the loss of Reverse recovery.Circuit of the present invention can be effective
Inhibit common mode leakage current, while improving the efficiency of grid-connected system.
Detailed description of the invention
Fig. 1 is a kind of novel single-phase non-isolated MOSFET gird-connected inverter.
Fig. 2 a~2d is circuit modal graph in network voltage positive-negative half-cycle (wherein with respect to Fig. 1 component lacked and connecting line
For off state).
Fig. 3 is each switching tube drive signal waveform in embodiment.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing and example, but protection scope of the present invention is not
It is limited to this.If being that those skilled in the art can refer to it is noted that having the process or symbol of not special detailed description below
The prior art understand or realize.
For Basic Topological of the invention as shown in Figure 1, for easy analysis, the device in circuit structure is accordingly to be regarded as ideal
Device.A kind of single-phase non-isolated MOSFET gird-connected inverter of the invention, specifically includes first switch tube S1, second switch S2,
Three switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, first diode VD1, the second diode VD2、
First inductance L1, the second inductance L2, direct current input capacitance Cdc.Anode and the direct current input capacitance C of DC busdcOne end,
One switching tube S1Drain electrode and third switching tube S3Drain electrode connection.The cathode and direct current input capacitance C of DC busdcIt is another
End, second switch S2Source electrode and the 4th switching tube S4Source electrode connection.First switch tube S1Source electrode and first diode
VD1Cathode and the 6th switching tube S6Drain electrode connection.First diode VD1Anode and the 5th switching tube S5Source electrode, second
Switching tube S2Drain electrode and the second inductance L2One end connection.Second inductance L2The other end connect with power grid one end.Third switch
Pipe S3Source electrode and the second diode VD2Cathode and the 5th switching tube S5Drain electrode connection.Second diode VD2Anode with
6th switching tube S6Source electrode, the first inductance L1One end and the 4th switching tube S4Drain electrode connection.First inductance L1The other end
It is connected with the other end of power grid.PV Cell indicates photovoltaic cell in figure.
Fig. 2 a~2d is circuit modal graph in network voltage positive-negative half-cycle, in order to enable circuit expression is more clear, wherein
Opposite Fig. 1 reduction component and connecting line be off state.
(1) in the positive half cycle of network voltage, circuit is as shown in Figure 2 a in the modal graph in this stage, first switch tube S1With
Two switching tube S2It simultaneously turns on, the 6th switching tube S6Conducting, grid-connected current flow through first switch tube S1, the 6th switching tube S6, first
Inductance L1, power grid, the second inductance L2, second switch S2It powers to power grid, bridge arm output voltage is UAB=+UDC.Bridge arm exports A
Point is U to the voltage of DC bus negative terminal NAN=UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0, so
(2) freewheeling period, circuit is as shown in Figure 2 b in the modal graph in this stage, first switch tube S1Conducting and second switch
Pipe S2It simultaneously turns off, the 6th switching tube S6With first diode VD1Conducting, electric current flow through the first inductance L1, power grid, the second inductance
L2, first diode VD1, the 6th switching tube S6Afterflow, bridge arm output voltage are UAB=0.Due to first switch tube S1It is opened with second
Close pipe S2Shutdown, utilizes first switch tube S1With second switch S2Junction capacity realization is pressed, and bridge arm exports A point to DC bus
The voltage of negative terminal N is UAN=0.5UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0.5UDC, so
(3) in the negative half period of network voltage, circuit is as shown in Figure 2 c in the modal graph in this stage, third switching tube S3 and
Four switching tube S4It simultaneously turns on, the 5th switching tube S5Conducting, grid-connected current flow through third switching tube S3, the 5th switching tube S5, second
Inductance L2, power grid, the first inductance L1, the 4th switching tube S4It powers to power grid, bridge arm output voltage is UAB=-UDC.Bridge arm exports A
Point is U to the voltage of DC bus negative terminal NAN=0, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=UDC, so
(4) freewheeling period, circuit is as shown in Figure 2 d in the modal graph in this stage, third switching tube S3 and the 4th switching tube S4
It simultaneously turns off, the 5th switching tube S5With the second diode VD2Conducting, electric current flow through the second inductance L2, power grid, the first inductance L1,
Two diode VD2, the 5th switching tube S5Afterflow, bridge arm output voltage are UAB=0.Due to third switching tube S3 and the 4th switching tube
S4Shutdown, utilizes third switching tube S3 and the 4th switching tube S4Junction capacity realization is pressed, and bridge arm exports A point to DC bus negative terminal N
Voltage be UAN=0.5UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0.5UDC, so
As the above analysis, common-mode voltage Ucm=0.5UDCIt keeps constant.Therefore, common mode leakage current can obtain very well
Inhibition.Simultaneously because freewheeling period electric current is not passed through body diode, therefore MOSFET element can be used, reduce due to
The turn-off power loss as caused by tail currents when IGBT device turns off, and SiC diode can substitute general-purpose diode, it is reversed extensive
The available good inhibition of multiple loss.Therefore circuit of the present invention can effectively inhibit common mode leakage current, while improve simultaneously
The efficiency of net electricity generation system.
Claims (3)
1. a kind of single-phase non-isolated MOSFET gird-connected inverter, it is characterised in that including first switch tube (S1), second switch
(S2), third switching tube (S3), the 4th switching tube (S4), the 5th switching tube (S5), the 6th switching tube (S6), first diode
(VD1), the second diode (VD2), the first inductance (L1), the second inductance (L2) and direct current input capacitance (Cdc).
2. a kind of single-phase non-isolated MOSFET gird-connected inverter is primarily characterized in that according to claim 1: DC bus
Anode with direct current input capacitance (Cdc) one end, first switch tube (S1) drain electrode and third switching tube (S3) drain electrode connect
It connects;The cathode and direct current input capacitance (C of DC busdc) the other end, second switch (S2) source electrode and the 4th switching tube
(S4) source electrode connection;First switch tube (S1) source electrode and first diode (VD1) cathode and the 6th switching tube (S6) leakage
Pole connection;First diode (VD1) anode and the 5th switching tube (S5) source electrode, second switch (S2) drain electrode and second
Inductance (L2) one end connection;Second inductance (L2) the other end connect with power grid one end;Third switching tube (S3) source electrode and
Two diode (VD2) cathode and the 5th switching tube (S5) drain electrode connection;Second diode (VD2) anode and the 6th switch
Manage (S6) source electrode, the first inductance (L1) one end and the 4th switching tube (S4) drain electrode connection;First inductance (L1) the other end
It is connected with the other end of power grid.
3. the single-phase non-isolated MOSFET gird-connected inverter of one kind according to claim 2, it is characterised in that: the switching tube
It is all made of the enhanced MOSFET of N-channel.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10965220B2 (en) | 2019-06-18 | 2021-03-30 | Delta Electronics (Shanghai) Co., Ltd. | Non-isolated inverting apparatus, control method thereof and photovoltaic system having the same |
CN112838778A (en) * | 2021-01-06 | 2021-05-25 | 宜宾职业技术学院 | Non-isolated current type grid-connected inverter without overlapping time and control method and system thereof |
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CN201994871U (en) * | 2011-03-04 | 2011-09-28 | 东南大学 | Photovoltaic grid six-switch tube bridge inverter |
CN202261071U (en) * | 2011-10-13 | 2012-05-30 | 艾伏新能源科技(上海)股份有限公司 | High-efficiency single-phase photovoltaic grid-connected inverter |
CN204538715U (en) * | 2015-04-20 | 2015-08-05 | 安徽明赫新能源有限公司 | The grid-connected main circuit of effective suppression leakage current |
CN105186912A (en) * | 2015-09-28 | 2015-12-23 | 河海大学 | Two-stage non-isolated full-bridge grid-connected inverter |
-
2018
- 2018-09-30 CN CN201811163527.0A patent/CN108988675A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN201994871U (en) * | 2011-03-04 | 2011-09-28 | 东南大学 | Photovoltaic grid six-switch tube bridge inverter |
CN202261071U (en) * | 2011-10-13 | 2012-05-30 | 艾伏新能源科技(上海)股份有限公司 | High-efficiency single-phase photovoltaic grid-connected inverter |
CN204538715U (en) * | 2015-04-20 | 2015-08-05 | 安徽明赫新能源有限公司 | The grid-connected main circuit of effective suppression leakage current |
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Non-Patent Citations (1)
Title |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10965220B2 (en) | 2019-06-18 | 2021-03-30 | Delta Electronics (Shanghai) Co., Ltd. | Non-isolated inverting apparatus, control method thereof and photovoltaic system having the same |
CN112838778A (en) * | 2021-01-06 | 2021-05-25 | 宜宾职业技术学院 | Non-isolated current type grid-connected inverter without overlapping time and control method and system thereof |
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Application publication date: 20181211 |