CN108964502A - A kind of single-phase non-isolated active clamp MOSFET inverter - Google Patents
A kind of single-phase non-isolated active clamp MOSFET inverter Download PDFInfo
- Publication number
- CN108964502A CN108964502A CN201811162307.6A CN201811162307A CN108964502A CN 108964502 A CN108964502 A CN 108964502A CN 201811162307 A CN201811162307 A CN 201811162307A CN 108964502 A CN108964502 A CN 108964502A
- Authority
- CN
- China
- Prior art keywords
- switching tube
- diode
- capacitor
- inductance
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0051—Diode reverse recovery losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Abstract
The present invention provides a kind of single-phase non-isolated active clamp MOSFET inverter, including eight switching tubes, four diodes and two split capacitors, is suitable for photovoltaic generating system.Resonance phenomena that may be present can effectively be inhibited by the way that clamp circuit is added in H6 topology inverter, keep constant common-mode voltage, circuit of the present invention can in effective solution inversion link as do not use transformer and caused by common mode current leakage, simultaneously because freewheeling period electric current is not passed through body diode, therefore MOSFET element can be used, reduce the turn-off power loss as caused by tail currents when as IGBT device shutdown, and SiC diode can substitute general-purpose diode, the available good inhibition of the loss of Reverse recovery.Therefore circuit of the present invention can effectively inhibit common mode leakage current, while improve the efficiency of grid-connected system.
Description
Technical field
The present invention relates to photovoltaic combining inverter fields, and in particular to a kind of single-phase non-isolated active clamp MOSFET inversion
Device.
Background technique
Solar energy cleanliness without any pollution is very important a kind of new energy.Due to the incident photon-to-electron conversion efficiency of photovoltaic solar plate
It is lower, therefore the efficiency for improving photovoltaic combining inverter is particularly important.The common gird-connected inverter with Industrial Frequency Transformer,
Since the presence meeting of transformer is so that the efficiency of system reduces, and increases the price of inverter, simultaneously because Industrial Frequency Transformer
Volume is larger, it is difficult to install.And the grid-connected system with high frequency transformer, one-stage transfor-mation device is increased, efficiency is also difficult to mention
It rises.Therefore to improve system effectiveness, generally use transformerless gird-connected inverter, due to transless so that power grid with it is inverse
Become device and there is direct electrical connection, when, there are when distribution capacity, full-bridge inverter can generate larger between solar panels and ground
Common mode leakage current, harm is generated to human body, and inverter may be damaged.Therefore to the research of non-isolation type inverter topology by
Extensive concern is arrived.The H5 type topology of German SMA company, can efficiently solve current leakage, but due to freewheeling period
Electric current flows through body diode, therefore HF switch pipe uses IGBT, IGBT to will cause biggish since there are tail currents
Turn-off power loss, the used time due to being pressed by the parasitic capacitance of device, due to device parameters and the difference of pcb board parasitic parameter
Can make that leakage current effect is inhibited to be deteriorated with resonant tank that may be present.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of single-phase non-isolated active clamp is proposed
MOSFET inverter.
The single-phase non-isolated active clamp MOSFET inverter of one kind of the invention, specifically includes a switching tube, second switch
Pipe, third switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube, the one or two pole
Pipe, the second diode, third diode, the 4th diode, the first inductance, the second inductance, first capacitor, the second capacitor.
The specific connection type of foregoing circuit are as follows: the anode of DC bus and one end of first capacitor, first switch tube
Drain electrode is connected with the drain electrode of third switching tube.The drain electrode of one end of the other end of first capacitor and the second capacitor, the 7th switching tube
It is connected with the drain electrode of the 8th switching tube.The other end of the cathode of DC bus and the second capacitor, the source electrode of second switch and
The source electrode of four switching tubes connects.The drain electrode and first of the cathode, the 5th switching tube of the source electrode and first diode of first switch tube
One end of inductance connects.The other end of first inductance is connected with one end of power grid.The anode of first diode and the 7th switching tube
Source electrode connected with the cathode of third diode.The source electrode and second switch of the anode of third diode and the 6th switching tube
Drain electrode connection.The cathode of the source electrode of third switching tube and the second diode, the drain electrode of the 6th switching tube and the second inductance one end
Connection.The anode of second diode is connect with the cathode of the source electrode of the 8th switching tube and the 4th diode.The sun of 4th diode
Pole is connect with the drain electrode of the source electrode and the 4th switching tube of the 5th switching tube.The other end of second inductance is connect with the power grid other end.
Further, the switching tube is all made of the enhanced MOSFET of N-channel.
Further, the 7th switching tube and the 8th switching tube play clamping action, and first capacitor and the second capacitor's capacity are equal.
The present invention can effectively inhibit resonance that may be present existing by the way that clamp circuit is added in inverter (H6 topology)
As keeping constant common-mode voltage.
Compared with prior art, circuit of the present invention has the advantage that are as follows: can in effective solution inversion link due to not
Common mode current leakage caused by using transformer, simultaneously because freewheeling period electric current is not passed through body diode, therefore
MOSFET element can be used, and reduce the turn-off power loss as caused by tail currents when as IGBT device shutdown, and SiC bis-
Pole pipe can substitute general-purpose diode, the available good inhibition of the loss of Reverse recovery.Circuit of the present invention can be effective
Inhibit common mode leakage current, while improving the efficiency of grid-connected system.
Detailed description of the invention
Fig. 1 is a kind of single-phase active clamper non-isolated grid-connected inverter topological diagram.
Fig. 2 a~2d is circuit modal graph in network voltage positive-negative half-cycle (wherein with respect to Fig. 1 component lacked and connecting line
For off state).
Fig. 3 is 6 switching tube (S in embodiment1-S6) drive signal waveform.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing and example, but protection scope of the present invention is not
It is limited to this.If being that those skilled in the art can refer to it is noted that having the process or symbol of not special detailed description below
The prior art understand or realize.
A kind of Basic Topological of single-phase active clamper non-isolated grid-connected inverter of the present invention is as shown in Figure 1, be
Easy analysis, the device in circuit structure are accordingly to be regarded as ideal component.
Such as Fig. 1, a kind of single-phase active clamper non-isolated grid-connected inverter specifically includes a switching tube S1, second open
Close pipe S2, third switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, the 7th switching tube S7, the 8th open
Close pipe S8, first diode VD1, the second diode VD2, third diode VD3, the 4th diode VD4, the first inductance L1, second
Inductance L2, first capacitor Cdc1, the second capacitor Cdc2.The specific connection type of circuit of the present invention are as follows: the anode and the of DC bus
One capacitor Cdc1One end, first switch tube S1Drain electrode and third switching tube S3Drain electrode connection.First capacitor Cdc1The other end
With the second capacitor Cdc2One end, the 7th switching tube S7Drain electrode and the 8th switching tube S8Drain electrode connection.The cathode of DC bus
With the second capacitor Cdc2The other end, second switch S2Source electrode and the 4th switching tube S4Source electrode connection.First switch tube S1
Source electrode and first diode VD1Cathode, the 5th switching tube S5Drain electrode and the first inductance L1One end connection.First inductance
L1The other end be connected with one end of power grid.First diode VD1Anode and the 7th switching tube S7Source electrode and third diode
VD3Cathode connection.Third diode VD3Anode and the 6th switching tube S6Source electrode and second switch S2Drain electrode connection.
Third switching tube S3Source electrode and the second diode VD2Cathode, the 6th switching tube S6Drain electrode and the second inductance L2One end
Connection.Second diode VD2Anode and the 8th switching tube S8Source electrode and the 4th diode VD4Cathode connection.Four or two pole
Pipe VD4Anode and the 5th switching tube S5Source electrode and the 4th switching tube S4Drain electrode connection.Second inductance L2The other end and electricity
The connection of the net other end.PV Cell indicates photovoltaic cell in figure.
Fig. 2 a~2d is circuit modal graph in network voltage positive-negative half-cycle, in order to enable circuit expression is more clear, wherein
Opposite Fig. 1 reduction component and connecting line be off state.
(1) in the positive half cycle of network voltage, circuit is as shown in Figure 2 a in the modal graph in this stage, first switch tube S1With
Two switching tube S2It simultaneously turns on, the 6th switching tube S6Conducting, the 7th switching tube S7Conducting, grid-connected current flow through first switch tube S1、
First inductance L1, power grid, the second inductance L2, the 6th switching tube S6, second switch S2It powers to power grid, bridge arm output voltage is
UAB=+UDC.It is U to the voltage of DC bus negative terminal N that bridge arm, which exports A point,AN=UDC, bridge arm output B point is to DC bus negative terminal N
Voltage be UBN=0, so
(2) freewheeling period, circuit is as shown in Figure 2 b in the modal graph in this stage, first switch tube S1Conducting and second switch
Pipe S2It simultaneously turns off, the 6th switching tube S6, first diode VD1With third diode VD3Conducting, the 7th switching tube S7Conducting.Electricity
Stream flows through the first inductance L1, power grid, the second inductance L2, the 6th switching tube S6, first diode VD1, third diode VD3Afterflow,
Bridge arm output voltage is UAB=0.Due to the 7th switching tube S7Conducting, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports A point,AN
=0.5UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0.5UDC, so
(3) in the negative half period of network voltage, circuit is as shown in Figure 2 c in the modal graph in this stage, third switching tube S3 and
Four switching tube S4It simultaneously turns on, the 5th switching tube S5Conducting, the 8th switching tube S8Conducting, grid-connected current flow through third switching tube S3,
Second inductance L2, power grid, the first inductance L1, the 5th switching tube S5, the 4th switching tube S4It powers to power grid, bridge arm output voltage is
UAB=-UDC.It is U to the voltage of DC bus negative terminal N that bridge arm, which exports A point,AN=0, bridge arm exports B point to DC bus negative terminal N's
Voltage is UBN=UDC, so
(4) freewheeling period, circuit is as shown in Figure 2 d in the modal graph in this stage, third switching tube S3 and the 4th switching tube S4
It simultaneously turns off, the 5th switching tube S5, the second diode VD2With the 4th diode VD4Conducting, the 8th switching tube S8Conducting.Electric current stream
Through the second inductance L2, power grid, the first inductance L1, the 5th switching tube S5, the second diode VD2, the 4th diode VD4Afterflow, bridge arm
Output voltage is UAB=0.Due to the 7th switching tube S7With the 8th switching tube S8Conducting, bridge arm export A point to DC bus negative terminal N
Voltage be UAN=0.5UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0.5UDC, so
As the above analysis, common-mode voltage Ucm=0.5UDCIt keeps constant.Therefore, common mode leakage current can obtain very well
Inhibition.Simultaneously because freewheeling period electric current is not passed through body diode, therefore MOSFET element can be used, reduce due to
The turn-off power loss as caused by tail currents when IGBT device turns off, and SiC diode can substitute general-purpose diode, it is reversed extensive
The available good inhibition of multiple loss.Therefore circuit of the present invention can effectively inhibit common mode leakage current, while improve simultaneously
The efficiency of net electricity generation system.
Claims (4)
1. a kind of single-phase non-isolated active clamp MOSFET inverter, it is characterised in that including a switching tube (S1), second switch
(S2), third switching tube (S3), the 4th switching tube (S4), the 5th switching tube (S5), the 6th switching tube (S6), the 7th switching tube
(S7), the 8th switching tube (S8), first diode (VD1), the second diode (VD2), third diode (VD3), the 4th diode
(VD4), the first inductance (L1), the second inductance (L2), first capacitor (Cdc1), the second capacitor (Cdc2).
2. a kind of single-phase non-isolated active clamp MOSFET inverter according to claim 1, it is characterised in that: DC bus
Anode with first capacitor (Cdc1) one end, first switch tube (S1) drain electrode and third switching tube (S3) drain electrode connection;The
One capacitor(Cdc1) the other end and the second capacitor (Cdc2) one end, the 7th switching tube (S7) drain electrode and the 8th switching tube (S8)
Drain electrode connection;The cathode of DC bus and the second capacitor (Cdc2) the other end, second switch (S2) source electrode and the 4th open
Close pipe (S4) source electrode connection;First switch tube (S1) source electrode and first diode (VD1) cathode, the 5th switching tube (S5)
Drain electrode and the first inductance (L1) one end connection;First inductance (L1) the other end be connected with one end of power grid;First diode
(VD1) anode and the 7th switching tube (S7) source electrode and third diode (VD3) cathode connection;Third diode (VD3)
Anode and the 6th switching tube (S6) source electrode and second switch (S2) drain electrode connection;Third switching tube (S3) source electrode and
Two diode (VD2) cathode, the 6th switching tube (S6) drain electrode and the second inductance (L2) one end connection;Second diode
(VD2) anode and the 8th switching tube (S8) source electrode and the 4th diode (VD4) cathode connection;4th diode (VD4)
Anode and the 5th switching tube (S5) source electrode and the 4th switching tube (S4) drain electrode connection;Second inductance (L2) the other end and electricity
The connection of the net other end.
3. the single-phase non-isolated active clamp MOSFET inverter of one kind according to claim 2, it is characterised in that: described to open
It closes pipe and is all made of the enhanced MOSFET of N-channel.
4. the single-phase non-isolated active clamp MOSFET inverter of one kind according to claim 2, it is characterised in that: the 7th opens
It closes eight switching tube of Guan Yu and plays clamping action, first capacitor (Cdc1) and the second capacitor (Cdc2) capacitance is equal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811162307.6A CN108964502A (en) | 2018-09-30 | 2018-09-30 | A kind of single-phase non-isolated active clamp MOSFET inverter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811162307.6A CN108964502A (en) | 2018-09-30 | 2018-09-30 | A kind of single-phase non-isolated active clamp MOSFET inverter |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108964502A true CN108964502A (en) | 2018-12-07 |
Family
ID=64472518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811162307.6A Pending CN108964502A (en) | 2018-09-30 | 2018-09-30 | A kind of single-phase non-isolated active clamp MOSFET inverter |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108964502A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115800785A (en) * | 2022-11-09 | 2023-03-14 | 国网湖北省电力有限公司宜昌供电公司 | Single-phase three-level four-port clamping type energy storage inverter |
CN117040307A (en) * | 2023-09-27 | 2023-11-10 | 大秦数字能源技术股份有限公司 | Inverter circuit, inverter and inversion method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163852A (en) * | 2011-03-15 | 2011-08-24 | 南京航空航天大学 | Neutral point clamped non-isolated photovoltaic grid-connected inverter |
CN105186912A (en) * | 2015-09-28 | 2015-12-23 | 河海大学 | Two-stage non-isolated full-bridge grid-connected inverter |
-
2018
- 2018-09-30 CN CN201811162307.6A patent/CN108964502A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163852A (en) * | 2011-03-15 | 2011-08-24 | 南京航空航天大学 | Neutral point clamped non-isolated photovoltaic grid-connected inverter |
CN105186912A (en) * | 2015-09-28 | 2015-12-23 | 河海大学 | Two-stage non-isolated full-bridge grid-connected inverter |
Non-Patent Citations (1)
Title |
---|
MONIRUL ISLAM,等: "H6-type transformerless single-phase inverter for grid-tied photovoltaic system", 《IET POWER ELECTRONICS》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115800785A (en) * | 2022-11-09 | 2023-03-14 | 国网湖北省电力有限公司宜昌供电公司 | Single-phase three-level four-port clamping type energy storage inverter |
CN115800785B (en) * | 2022-11-09 | 2024-02-13 | 国网湖北省电力有限公司宜昌供电公司 | Single-phase three-level four-port clamp type energy storage inverter |
CN117040307A (en) * | 2023-09-27 | 2023-11-10 | 大秦数字能源技术股份有限公司 | Inverter circuit, inverter and inversion method |
CN117040307B (en) * | 2023-09-27 | 2023-12-19 | 大秦数字能源技术股份有限公司 | Inverter circuit, inverter and inversion method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101667789B (en) | Inverter circuit used for solar energy photovoltaic grid connection and device thereof | |
CN103051233B (en) | Non-isolated single-phase photovoltaic grid-connected inverter and on-off control timing sequence thereof | |
CN101902143B (en) | Capacitor-clamped three-level dual-buck half-bridge inverter | |
CN106602913B (en) | A kind of nine level inverse conversion topological circuits | |
CN105099249B (en) | High reliability dual input inverter | |
CN105939126B (en) | A kind of quasi- Z-source inverter of switched inductors type mixing | |
CN101667793B (en) | Grid-connected inverter | |
CN103178739A (en) | Zero-voltage transition full-bridge non-isolated photovoltaic grid-connected inverter | |
CN202513843U (en) | Full-bridge grid-connected inverter | |
CN201536328U (en) | grid-connected inverter | |
CN103956927A (en) | Voltage-active-clamping non-transformer-type single-phase photovoltaic inverter | |
CN109194175A (en) | A kind of non-isolated grid-connected inverter circuit of type leakage current and control method altogether | |
CN104242716B (en) | High-reliability non-switching-loss type non-isolated inverter and switching control time sequence thereof | |
CN105656077A (en) | Efficient low-leakage current seven-switch photovoltaic grid-connected inverter circuit and modulation method thereof | |
CN108964502A (en) | A kind of single-phase non-isolated active clamp MOSFET inverter | |
CN201515320U (en) | Grid-connected inverter | |
CN106787892B (en) | A kind of method for generation of single-phase three-level inverter circuit and its pwm signal | |
CN108988675A (en) | A kind of single-phase non-isolated MOSFET gird-connected inverter | |
CN107204719B (en) | For inhibiting the inverter topology circuit and its control method of leakage current in photovoltaic parallel in system | |
CN109245588A (en) | A kind of novel single-phase non-isolated active clamp gird-connected inverter | |
CN108964503A (en) | A kind of novel single-phase non-isolated active clamp MOSFET inverter | |
CN209516966U (en) | A kind of single-phase non-isolated active clamp MOSFET inverter | |
CN203301393U (en) | Non transformer single-phase grid connected inverter | |
CN209516962U (en) | A kind of novel single-phase non-isolated active clamp MOSFET inverter | |
CN209516963U (en) | A kind of single-phase active clamper non-isolated grid-connected inverter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181207 |