CN104167950A - Friction generator - Google Patents
Friction generator Download PDFInfo
- Publication number
- CN104167950A CN104167950A CN201310181849.9A CN201310181849A CN104167950A CN 104167950 A CN104167950 A CN 104167950A CN 201310181849 A CN201310181849 A CN 201310181849A CN 104167950 A CN104167950 A CN 104167950A
- Authority
- CN
- China
- Prior art keywords
- alloy
- film
- high molecular
- insulating barrier
- molecular polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
Abstract
The invention relates to a friction generator comprising a first electrode layer, a first high-molecular polymer insulation layer and a second electrode layer. The first electrode layer, the first high-molecular polymer insulation layer and the second electrode layer are successively laminated. Supporting portions are arranged between the first high-molecular polymer insulation layer and the second electrode layer; and the supporting portions include zinc oxide nanowire arrays and protective layers coating the zinc oxide nanowire arrays. The first electrode layer and the second electrode layer respectively serve as two output terminals of the voltage or current of the friction generator. According to the invention, because the zinc oxide nanowire arrays coated by the protective layer (PMMA) are used supporting portions, a separation space unit is formed between friction surfaces, thereby realizing the basic separation effect of the friction layers.
Description
Technical field
The present invention relates to a kind of triboelectricity machine, especially relate to a kind of triboelectricity machine that separates support portion that is provided with.
Background technology
Along with modern life level improves constantly, rhythm of life is constantly accelerated, and has occurred convenient, low to the environment dependency degree self power generation equipment of application.Existing self power generation equipment utilizes the piezoelectric property of material conventionally.For example 2006, the professor Wang Zhonglin of the georgia ,u.s.a Institute of Technology etc. successfully converted mechanical energy to electric energy within the scope of nanoscale, developed minimum in the world generator-nano generator.The general principle of nano generator is: when nano wire (NWs) when dynamic tensile, generates piezoelectricity electromotive force under external force in nano wire, corresponding transient current flows with balance Fermi level at two ends.
Between object and object, mutually rub, will make negative electricity on side's band, the opposing party becomes positively charged, because fricative electricity between object is friction electricity.Friction electricity is one of modal phenomenon of nature, but utilizes and be left in the basket because be difficult to collection.If friction electricity can be applied in self power generation equipment, bring more facility will certainly to people's life.
The applicant has developed triboelectricity machine, and it relies on the electrify variation of electromotive force and the inductive effect of both sides metal polar plate of internal friction to produce electric energy, is a kind of taking novel principle and method as basic novel electricity generator.This generator can be realized under the condition of lower cost, less raw material and manufacturing procedure, has low cost, high-performance, the advantage such as free from environmental pollution.This generator application is extensive, can from numerous activities such as mankind's activity, communications and transportation, wave fluctuation, wind drive, mechanical oscillation, obtain energy.In addition, it can also, for personal electric product, environmental monitoring, medical science etc. provide electric energy, therefore have huge commercial value and social benefit.
But, according to the operation principle of triboelectricity machine, in the process of generator work, between high molecular polymer and metal electrode, or between high molecular polymer, form rubbing surface, rubbing surface needs continuous contact friction and separates, and in the time of contact condition or released state, generator does not have good output performance always.Therefore, in order to produce the generator of excellent performance, need to improve the structure of generator, make two rubbing surfaces can be good at contact and separate.
Summary of the invention
The technical problem that the present invention solves is: overcome existing triboelectricity machine always in contact condition or released state; the affected defect of output performance; a kind of triboelectricity machine is provided; adopt the coated vertical-growth of protective layer in the lip-deep zinc oxide nano-wire array of frictional layer as separating support portion, overcome above-mentioned defect.
In order to solve the problems of the technologies described above; the first technical scheme provided by the invention is; a kind of triboelectricity machine; comprise the first electrode layer, the first high molecular polymer insulating barrier and the second electrode lay that are cascading; between wherein said the first high molecular polymer insulating barrier and the second electrode lay, be provided with support portion; described support portion comprises the protective layer of zinc oxide nano-wire array and coating zinc oxide nano-wire array, and the first electrode layer and the second electrode lay are respectively the voltage of triboelectricity machine or two outputs of electric current.
Aforesaid triboelectricity machine, described friction electrode material therefor is metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy; Described zinc oxide nano-wire array vertical-growth is on arbitrary surface of the first high molecular polymer insulating barrier and the second electrode lay apparent surface.
Aforesaid triboelectricity machine, on at least one surface of the first high molecular polymer surface of insulating layer and the second electrode lay apparent surface, be provided with micro-nano concaveconvex structure, the micro-nano concaveconvex structure arranging on described the first high molecular polymer surface of insulating layer is the nano concavo-convex structure of height of projection 50nm-300nm; The micro-nano concaveconvex structure arranging on described the second electrode lay surface is the micro-nano concaveconvex structure of height of projection 300nm-1 μ m.
Aforesaid triboelectricity machine, described triboelectricity machine is provided with the second high molecular polymer insulating barrier between the first high molecular polymer insulating barrier and the second electrode lay, described support portion is arranged between the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier, and described zinc oxide nano-wire array vertical-growth is on arbitrary surface of the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier apparent surface; The first electrode layer and the second electrode lay are respectively the voltage of triboelectricity machine or two outputs of electric current.
Aforesaid triboelectricity machine, is provided with micro-nano concaveconvex structure at least one surface of the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier apparent surface, the nano concavo-convex structure that described micro-nano concaveconvex structure is height of projection 50nm-300nm.
Aforesaid triboelectricity machine, described triboelectricity machine further comprises thin layer between two parties, this between two parties thin layer be arranged between the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier, described the first high molecular polymer insulating barrier and between two parties between thin layer, and/or between thin layer and the second high molecular polymer insulating barrier, be provided with support portion between two parties, zinc oxide nano-wire array vertical-growth is at the first high molecular polymer insulating barrier with between two parties on arbitrary surface of thin layer apparent surface, and/or the second high molecular polymer insulating barrier and between two parties on arbitrary surface of thin layer apparent surface.
Aforesaid triboelectricity machine, on at least one surface of the first high molecular polymer insulating barrier and between two parties thin layer apparent surface, and/or at least one surface of second high molecular polymer insulating barrier and thin layer apparent surface between two parties, be provided with micro-nano concaveconvex structure, the nano concavo-convex structure that described micro-nano concaveconvex structure is height of projection 50nm-300nm.
Aforesaid triboelectricity machine, the described material therefor of thin layer is between two parties different with the second high molecular polymer insulating barrier material therefor from the first high molecular polymer insulating barrier, is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
Aforesaid triboelectricity machine, described the first high molecular polymer insulating barrier and/or the second high molecular polymer insulating barrier material therefor are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
Aforesaid triboelectricity machine, described the second electrode lay material therefor is selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
Aforesaid triboelectricity machine, described the first electrode layer material therefor is selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.Aforesaid triboelectricity machine, described protective layer material therefor is polymethyl methacrylate.
Aforesaid triboelectricity machine, the height of described support portion is 20-500 μ m.Preferably, its width is 0.5-2mm; Length is 0.5mm-3cm.
Aforesaid triboelectricity machine, described support portion arrangement mode, for being shaped as well word, is pitched word, zebra, arrayed cross or mouthful word.
In order to solve the problems of the technologies described above, the second technical scheme provided by the invention is, a kind of triboelectricity machine, described triboelectricity machine comprises the first electrode layer being cascading, the first high molecular polymer insulating barrier, friction electrode layer, the second high molecular polymer insulating barrier and the second electrode lay; Between wherein said the first high molecular polymer insulating barrier and friction electrode layer, and/or second high molecular polymer insulating barrier and friction be provided with support portion between electrode layer, described support portion comprises the protective layer of zinc oxide nano-wire array and coating zinc oxide nano-wire array, and described zinc oxide nano-wire array vertical-growth is on arbitrary surface of high polymer layer and friction electrode layer apparent surface; Described the first electrode layer and the second electrode lay are an output of the dynamo-electric pressure of triboelectricity or electric current; Described friction electrode layer is another output of the dynamo-electric pressure of triboelectricity or electric current.
Aforesaid triboelectricity machine, on at least one surface of the first high molecular polymer insulating barrier and friction electrode layer apparent surface, and/or being provided with micro-nano concaveconvex structure at least one surface of second high molecular polymer insulating barrier and friction electrode layer apparent surface, the micro-nano concaveconvex structure arranging on described high polymer layer surface is the nano concavo-convex structure of height of projection 50nm-300nm; The micro-nano concaveconvex structure arranging in described friction electrode layer surface is the micro-nano concaveconvex structure of height of projection 300nm-1 μ m.
Aforesaid triboelectricity machine, described friction electrode layer material therefor is metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
Aforesaid triboelectricity machine, described the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier material therefor are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
Aforesaid triboelectricity machine, described the first electrode layer and the second electrode lay material therefor are selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
Aforesaid triboelectricity machine, described protective layer material therefor is polymethyl methacrylate.
Aforesaid triboelectricity machine, the height of described support portion is 20-500 μ m.Preferably, its width is 0.5-2mm; Length is 0.5mm-3cm.
Aforesaid triboelectricity machine, described support portion arrangement mode, for being shaped as well word, is pitched word, zebra, arrayed cross or mouthful word.
Triboelectricity machine of the present invention is between high polymer layer and metal electrode layer; or between high polymer layer, form frictional layer interface; owing to adopting the coated zinc oxide nano-wire array of protective layer (PMMA) as support portion; thereby between two frictional layers, form a separated space, can realize the effect that frictional layer separates substantially.In addition, because the support portion elastic performance of the coated zinc oxide nano-wire array of protective layer (PMMA) is better, make can comparatively fast separate after two frictional layer contacts, promote rapidly electrical potential difference, and then drive foreign current to flow, the output that has improved electric current.Moreover, because protective layer (PMMA) is coated on the outside of zinc oxide nano-wire array, thereby avoid zinc oxide nano-wire array to dissolve or the appearance of the situation such as friction damage.Finally, zinc oxide nanowire has piezoelectric property, can produce certain piezoelectricity electric energy in the situation that of extrusion friction, and the friction electric energy that the piezoelectricity electric energy that zinc oxide nanowire produces and triboelectricity machine produce is superimposed, make the electric energy of triboelectricity machine output of the present invention higher, performance is better.
Brief description of the drawings
Fig. 1 is the perspective view of a kind of embodiment of triboelectricity machine of the present invention.
Fig. 2 is the generalized section of Fig. 1 triboelectricity machine of the present invention.
Fig. 3 is the perspective view of the another kind of embodiment of triboelectricity machine of the present invention.
Fig. 4 is the generalized section of Fig. 3 triboelectricity machine of the present invention.
Fig. 5 is the perspective view of the another kind of embodiment of triboelectricity machine of the present invention.
Fig. 6 is the generalized section of Fig. 5 triboelectricity machine of the present invention.
Fig. 7 is the perspective view of the another kind of embodiment of triboelectricity machine of the present invention.
Fig. 8 is the generalized section of Fig. 7 triboelectricity machine of the present invention.
Fig. 9 is other set-up mode perspective view of support portion of the present invention.
Figure 10 is set-up mode generalized section in support portion in Fig. 9 of the present invention.
Figure 11 is other set-up mode schematic diagrames of support portion of the present invention.
Figure 12 is other set-up mode schematic diagrames of support portion of the present invention.
Figure 13 is other set-up mode schematic diagrames of support portion of the present invention.
Embodiment
For fully understanding object, feature and effect of the present invention, by following concrete execution mode, the present invention is elaborated.
The present invention is a kind of triboelectricity machine, and the coated zinc oxide nano-wire array of protective layer (PMMA) is as support portion, thereby between two frictional layers, has formed a separated space, can realize the effect that frictional layer separates substantially.
As depicted in figs. 1 and 2; a kind of triboelectricity machine 1 comprises the first electrode layer 11, the first high molecular polymer insulating barrier 12 and the second electrode lay 13 that are cascading; between wherein said the first high molecular polymer insulating barrier 12 and the second electrode lay 13, be provided with support portion 14, described support portion 14 comprises the protective layer 142 of zinc oxide nano-wire array 141 and coating zinc oxide nano-wire array.Described zinc oxide nano-wire array 141 vertical-growths are on arbitrary surface of the first high molecular polymer insulating barrier 12 and the second electrode lay 13 apparent surfaces; The first electrode layer 11 and the second electrode lay 13 are the voltage of triboelectricity machine or the output of electric current.
As shown in Figure 2, in a specific embodiment of the present invention, the second electrode lay 13 material therefors are metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.Concrete, triboelectricity machine 1 comprises: the first electrode layer 11, the first high molecular polymer insulating barrier 12, the second electrode lay 13 and support portion 14; The first electrode layer 11 is arranged on the first side surface of the first high molecular polymer insulating barrier 12; on the second side surface of the first high molecular polymer insulating barrier 12, be provided with support portion 14, described support portion 14 comprises that vertical-growth adopts polymethyl methacrylate at first zinc oxide nano-wire array 141 on high molecular polymer insulating barrier 12 surfaces and the protective layer 142(of coating zinc oxide nano-wire array).The first high molecular polymer insulating barrier 12 surfaces that are provided with support portion 14 just (for example adopt double faced adhesive tape to stacked setting with the second electrode lay 13 surfaces, all-purpose adhesive, thermoplastic engineering plastic such as polyphenylene oxide, polyolefin etc. is undertaken bonding by edge), composition triboelectricity machine 1.The first electrode layer 11 and the second electrode lay 13 are as the voltage of triboelectricity machine 1 or the output of electric current.
The first high molecular polymer insulating barrier 12 surfaces that are provided with support portion 14 have at least a surface to be provided with micro-nano concaveconvex structure (not shown) with the second electrode lay 13 surfaces, and the micro-nano concaveconvex structure arranging on described high polymer layer surface is the nano concavo-convex structure of height of projection 50nm-300nm; The described the second electrode lay 13 upper micro-nano concaveconvex structures that arrange in surface are the micro-nano concaveconvex structure of height of projection 300nm-1 μ m.Preferably, the surface of the second electrode lay 13 arranges micro-nano concaveconvex structure (not shown).
In addition, zinc oxide nanowire also can be grown on the second electrode lay 13, and to form support portion 14, so preferred micro-nano concaveconvex structure is arranged on the first high molecular polymer insulating barrier 12.Micro-nano concaveconvex structure is separately positioned in different aspects from support portion 14, is convenient to manufacture.
The first electrode layer 11 does not have particular provisions to material therefor, can form the material of conductive layer all within protection scope of the present invention, for example indium tin oxide, Graphene electrodes, nano silver wire film, and metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
The first high molecular polymer insulating barrier 12 material therefors are selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
As shown in Figure 3 and Figure 4, in a specific embodiment of the present invention, it is concrete that triboelectricity machine 1 is provided with the second high molecular polymer insulating barrier 15 between the first high molecular polymer insulating barrier 12 and the second electrode lay 13, and triboelectricity machine 1 comprises: the first electrode layer 11, the first high molecular polymer insulating barrier 12, the second high molecular polymer insulating barrier 15, the second electrode lay 13 and support portion 14; The first electrode layer 11 is arranged on the first side surface of the first high molecular polymer insulating barrier 12; the second electrode lay 13 is arranged on the first side surface of the second high molecular polymer insulating barrier 15; on the second side surface of the second high molecular polymer insulating barrier 15, be provided with support portion 14, described support portion comprises that vertical-growth is at the zinc oxide nano-wire array 141 on the second high molecular polymer insulating barrier 15 surfaces and the protective layer (polymethyl methacrylate) 142 of coating zinc oxide nano-wire array.Be provided with the surface of the second high molecular polymer insulating barrier 15 of support portion 14 and the second side surface of the first high molecular polymer insulating barrier 12 just to stacked placement, composition triboelectricity machine 1.The first electrode layer 11 and the second electrode lay 13 are as the voltage of triboelectricity machine 1 or the output of electric current.
The second high molecular polymer insulating barrier 15 surfaces that are provided with support portion 14 have at least a surface to be provided with micro-nano concaveconvex structure (not shown) with the first high molecular polymer insulating barrier 12 second side surfaces, and the micro-nano concaveconvex structure arranging on described high polymer layer surface is the nano concavo-convex structure of height of projection 50nm-300nm.Preferably, the second side surface of the first high molecular polymer insulating barrier 12 arranges micro-nano concaveconvex structure.
In addition, zinc oxide nanowire also can be grown on the first high molecular polymer insulating barrier 12, and to form support portion 14, so preferred micro-nano concaveconvex structure is arranged on the second high molecular polymer insulating barrier 15.Micro-nano concaveconvex structure is separately positioned in different aspects from support portion 14, is convenient to manufacture.
The first electrode layer 11 and the second electrode lay 13 do not have particular provisions to material therefor, can form the material of conductive layer all within protection scope of the present invention, for example indium tin oxide, Graphene electrodes, nano silver wire film, and metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
The first high molecular polymer insulating barrier 12 and the second high molecular polymer insulating barrier 15 material therefors are preferably different, are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
As shown in Figure 5 and Figure 6, in an embodiment, triboelectricity machine 1 can further include thin layer 16 between two parties, this between two parties thin layer 16 be arranged between the first high molecular polymer insulating barrier 12 and the second high molecular polymer insulating barrier 15, described the first high molecular polymer insulating barrier 12 and between two parties between thin layer 16, and/or between thin layer 16 and the second high molecular polymer insulating barrier 15, be provided with support portion 14 between two parties.Concrete, triboelectricity machine 1 comprises the first electrode layer 11, the first high molecular polymer insulating barrier 12, thin layer 16, the second high molecular polymer insulating barrier 15, the second electrode lay 13 and support portion 14 between two parties; The first electrode layer 11 is arranged on the first side surface of the first high molecular polymer insulating barrier 12, the second electrode lay 13 is arranged on the first side surface of the second high molecular polymer insulating barrier 15, thin layer 16 is arranged between the first high molecular polymer insulating barrier 12 and the second high molecular polymer insulating barrier 15 between two parties, and at least one surface in the first high molecular polymer insulating barrier 12 and between two parties thin layer 16 apparent surfaces, and/or at least one surface in thin layer 16 and the second high molecular polymer insulating barrier 15 apparent surfaces is provided with support portion 14 between two parties; Support portion 14 comprises the protective layer (polymethyl methacrylate) 142 of zinc oxide nano-wire array 141 and coating zinc oxide nano-wire array.Between two parties thin layer 16 respectively with the stacked setting of the second side surface of the second side surface and the second high molecular polymer insulating barrier 15 of the first high molecular polymer insulating barrier 12, composition triboelectricity machine 1.The first electrode layer 11 and the second electrode lay 13 are as the voltage of triboelectricity machine 1 or the output of electric current.Zinc oxide nano-wire array 141 vertical-growths are at the first high molecular polymer insulating barrier 12 with between two parties on arbitrary surface of thin layer 16 apparent surfaces, and/or the second high molecular polymer insulating barrier 15 and between two parties on arbitrary surface of thin layer 16 apparent surfaces.
On at least one surface of the first high molecular polymer insulating barrier 12 and between two parties thin layer 16 apparent surfaces, and/or at least one surface of second high molecular polymer insulating barrier 15 and thin layer 16 apparent surfaces between two parties, be provided with micro-nano concaveconvex structure (not shown), the nano concavo-convex structure that described micro-nano concaveconvex structure is height of projection 50nm-300nm.Preferably, micro-nano concaveconvex structure is separately positioned in different aspects from support portion 14, is convenient to manufacture.
The first electrode layer 11 and the second electrode lay 13 do not have particular provisions to material therefor, can form the material of conductive layer all within protection scope of the present invention, for example indium tin oxide, Graphene electrodes, nano silver wire film, and metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
The first high molecular polymer insulating barrier 12 and the second high molecular polymer insulating barrier 15 material therefors are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
Thin layer 16 material therefors are different with the second high molecular polymer insulating barrier 15 material therefors from the first high molecular polymer insulating barrier 12 between two parties, can be polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
As shown in Figure 7 and Figure 8, another kind of triboelectricity machine 2, comprises the first electrode layer 21, the first high molecular polymer insulating barriers 22 that are cascading, friction electrode layer 23, the second high molecular polymer insulating barriers 24 and the second electrode lay 25; Between wherein said the first high molecular polymer insulating barrier 22 and friction electrode layer 23, and/or second high molecular polymer insulating barrier 24 and friction be provided with support portion 26 between electrode layer 23, described support portion 26 comprises the protective layer 262 of zinc oxide nano-wire array 261 and coating zinc oxide nano-wire array, and described zinc oxide nano-wire array vertical-growth is on arbitrary surface of high polymer layer and friction electrode layer apparent surface; Described the first electrode layer 21 and the second electrode lay 25 connect an output into triboelectricity machine 2 voltages or electric current; Another output that described friction electrode 23 is triboelectricity machine 2 voltages or electric current.On at least one surface of the first high molecular polymer insulating barrier 22 and friction electrode layer 23 apparent surfaces, and being provided with micro-nano concaveconvex structure (not shown) at least one surface of second high molecular polymer insulating barrier 24 and friction electrode layer 23 apparent surfaces, the micro-nano concaveconvex structure arranging on described high polymer layer surface is the nano concavo-convex structure of height of projection 50nm-300nm; The described friction electrode layer 23 upper micro-nano concaveconvex structures that arrange in surface are the micro-nano concaveconvex structure of height of projection 300nm-1 μ m.
In an embodiment, triboelectricity machine 2 comprises: the first electrode layer 21, the first high molecular polymer insulating barrier 22, friction electrode layer 23, the second high molecular polymer insulating barrier 24, the second electrode lay 25 and support portion 26, the first electrode layer 21 is arranged on the first side surface of the first polymeric layer 22, the second electrode lay 25 is arranged on the first side surface of the second high molecular polymer insulating barrier 24, friction electrode layer 23 is arranged between the first high molecular polymer insulating barrier 22 and the second high molecular polymer insulating barrier 24, on the second side surface of the first high molecular polymer insulating barrier 22 and the second side surface of the second high molecular polymer insulating barrier 24, at least one surface is provided with support portion 26, described support portion 26 comprises the protective layer (polymethyl methacrylate) 262 of zinc oxide nano-wire array 261 and coating zinc oxide nano-wire array.The stacked placement of the first side surface of the second side surface of the first high molecular polymer insulating barrier 22 and friction electrode layer 23, with the stacked placement of the second side surface with friction electrode layer 23 of the second side surface of the second high molecular polymer insulating barrier 24, composition triboelectricity machine 2.The first electrode layer 21 and the second electrode lay 25 connect as voltage of triboelectricity machine 2 or the output of electric current, and friction electrode layer 23 is as another voltage of triboelectricity machine 2 or the output of electric current.
In two surfaces that the first side surface of the second side surface of the first high molecular polymer insulating barrier 22 and friction electrode layer 23 is oppositely arranged, at least one surface is provided with micro-nano concaveconvex structure (not shown), and in two surfaces that the second side surface of the second side surface of the second high molecular polymer insulating barrier 24 and friction electrode layer 23 is oppositely arranged, at least one surface is provided with micro-nano concaveconvex structure (not shown).The micro-nano concaveconvex structure arranging on described high polymer layer surface is the nano concavo-convex structure of height of projection 50nm-300nm; The described friction electrode layer 23 upper micro-nano concaveconvex structures that arrange in surface are the nano concavo-convex structure of height of projection 300nm-1 μ m.Preferably, micro-nano concaveconvex structure is separately positioned in different aspects from support portion 26, is convenient to manufacture.
Friction electrode layer 23 material therefors are metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
The first high molecular polymer insulating barrier 22 and the second high molecular polymer insulating barrier 24 material therefors are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
The first electrode layer 21 and the second electrode lay 25 material therefors are selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
Triboelectricity machine of the present invention is owing to adopting the coated zinc oxide nano-wire array of protective layer (PMMA) as support portion, thereby between two frictional layers, formed a separated space, can realize the effect that frictional layer separates substantially.
Because the support portion elastic performance of the coated zinc oxide nano-wire array of protective layer (PMMA) is better, make can comparatively fast separate after two frictional layer contacts, promote rapidly electrical potential difference, and then drive foreign current to flow, the output that has improved electric current.
Because protective layer (PMMA) is coated on the outside of zinc oxide nano-wire array, thereby avoid zinc oxide nano-wire array to dissolve or the appearance of the situation such as friction damage.In addition, zinc oxide nanowire has piezoelectric property, can produce certain piezoelectricity electric energy in the situation that of extrusion friction, and the friction electric energy that the piezoelectricity electric energy that zinc oxide nanowire produces and triboelectricity machine produce is superimposed, make the electric energy of triboelectricity machine output of the present invention higher, performance is better.
Hereinafter, describe the setting position of support portion of the present invention in detail as an example of the triboelectricity machine of structure shown in Fig. 3 and Fig. 4 example.Those skilled in the art are easy to following these to arrange in the triboelectricity machine of other structures that relational application mentions to the present invention.
Support portion is preferably still not limited to be cylinder, and four prisms cylinder is arranged on the position, both sides of the edge of the first high molecular polymer insulating barrier or the second high molecular polymer insulating barrier, when playing a supporting role, seldom reduces again friction area.The height of support portion is 20-500 μ m.Preferably, its width is 0.5-2mm; Length is 0.5mm-3cm.Support portion arrangement mode preferred array is arranged, and shape is not limit, for example, be well word, fork word, zebra, arrayed cross or square shape shape.
As shown in Figure 9 and Figure 10, in the time that the area of triboelectricity machine is very large, can parallelly be set up in parallel multiple stripe shapes support portion, play the effect that a rule supports, make well again simultaneously.
Support portion can also be arranged on four end angles (as shown in figure 11) of high polymer layer, and the edge (as shown in figure 12) and the parallel array that are arranged on high polymer layer are arranged on (as shown in figure 13) on high polymer layer.
Describe the preparation method of support portion of the present invention below in detail.
A. on high polymer layer or metal or alloy layer, make the designed region of zinc oxide growth by lithography
Photoresist layer is set on high polymer layer, and then photoetching high polymer layer surface, forms designed zinc oxide nanowire growth district on high polymer layer surface.The present invention does not have particular/special requirement to photoresist used, the conventional photoresist for substrate photoengraving all can be applicable to the present invention, for example comprise 5-60 mass percent photosensitive resin (for example epoxy resin modification thing), the reactive diluent (for example polyethylene glycol dimethacrylate) of 5-50 mass percent, the light trigger of 0.1-15 mass percent.Those skilled in the art, according to this step, have been easy to make by lithography the designed region of zinc oxide growth on metal or alloy layer.
Arranging before photoresist layer, adopt conventional injection sputter on a face of high polymer layer or metal or alloy layer, to generate the zinc oxide seed layer of a thickness 30-50nm.
On high polymer layer, arrange before photoresist layer, electrode layer is arranged on high polymer layer, method therefor is this area routine techniques method, for example utilize radio frequency sputter, by any one radio frequency sputter in the metal or alloy such as gold, platinum, titanium or NiTi to high polymer layer.
B. vertical-growth zinc oxide in the region that makes zinc oxide growth by lithography
In the growth district of photoetching, adopt wet chemistry method growth of zinc oxide nano linear array, make zinc oxide nano-wire array only be grown in the high polymer layer surface of exposure.The present invention adopts conventional wet chemistry method growth of zinc oxide nano linear array, for example, adopt urotropine (HMTA) and zinc nitrate hexahydrate (ZnNO
36 (H
2o) mixture) is as nutrient solution, in suitable temperature for example at 80-95 DEG C, and growth of zinc oxide nano linear array.Concrete, in an embodiment, adopt 0.1mol/L concentration by equimolar urotropine (HMTA) and zinc nitrate hexahydrate (ZnNO
36 (H
2o)) the nutrient solution of composition, generation is had to facing down of zinc oxide seed layer, be placed on nutrient solution top, at 85 DEG C in mechanical convection heating furnace (model: Yamato DKN400, California, Santa Clara) middle growth, with deionized water rinsing and at air drying, obtain zinc oxide nano-wire array.
C. at the surface coverage protective layer of zinc oxide nano-wire array layer
By spin-coating method, protective layer is covered on zinc oxide nano-wire array.
D. peel off photoresist and form support portion.
Micro-nano concaveconvex structure of the present invention can adopt several different methods to be prepared, for example, with the silicon template compacting that has ad hoc rules bulge-structure, with sand papering metal surface and additive method.Describe a kind of preparation method of micro-nano concaveconvex structure below in detail.
S1 makes silicon template.Silicon chip is made to regular figure by the method for photoetching on surface.Carry out the technique anisotropic etching of wet etching for the silicon chip of figure, can carve the rectangular pyramid array structure of spill, or also can, with doing the technique isotropic etching of carving, can carve the cube array structure of spill.Carve good template afterwards and clean up with acetone and isopropyl alcohol, then all templates are all carried out the processing of surface silicon alkanisation in the atmosphere of trim,ethylchlorosilane, and the silicon template of handling well is stand-by.
S2 makes the polymer membrane with micro-nano relief structured surface.First polymer paste is coated on to silicon template surface, vacuum degassing, removes mixture unnecessary silicon chip surface by the mode of rotary coating, forms the polymeric liquid film of thin layer.Whole template is solidified, then peel off, there is uniformly the polymer film of specific microstructure array.
In the time that each layer of triboelectricity machine of the present invention is bent downwardly, due to the micro-nano concaveconvex structure existing, between high molecular polymer insulating barrier and metal electrode layer in triboelectricity machine, or between high molecular polymer insulating barrier, phase mutual friction produces electrostatic charge, the generation of electrostatic charge can make between the first electrode layer and the second electrode lay, or the first electrode layer and the second electrode lay electric capacity respectively and between friction electrode layer changes, thereby cause between the first electrode layer and the second electrode lay, or there is electrical potential difference respectively and between friction electrode layer in the first electrode layer and the second electrode lay.Due to the existence of electrical potential difference between electrode, free electron by by external circuit by the low effluent of electromotive force to the high side of electromotive force, thereby in external circuit, form electric current.
Triboelectricity machine of the present invention is owing to adopting the coated zinc oxide nano-wire array of protective layer as support portion, thereby between two frictional layers, formed a separated space, can realize the effect that frictional layer separates substantially.After two frictional layer contacts, can comparatively fast separate, promote rapidly electrical potential difference, and then drive foreign current to flow, the output that has improved electric current.
Zinc oxide nanowire has piezoelectric property, the in the situation that of extrusion friction, can produce certain piezoelectricity electric energy, the friction electric energy that the piezoelectricity electric energy that zinc oxide nanowire produces and triboelectricity machine produce is superimposed, and makes the electric energy of triboelectricity machine output of the present invention higher, and performance is better.
Set forth the enforcement of method of the present invention below by specific embodiment, one skilled in the art will appreciate that this should not be understood to the restriction to the claims in the present invention scope.
Embodiment 1
As illustrated in fig. 1 and 2, the present embodiment triboelectricity machine is of a size of 3cm × 3cm, and gross thickness is approximately 500 μ m left and right.This triboelectricity machine first electrode layer 11, the first high molecular polymer insulating barrier 12, the second electrode lay 13 and support portion 14, the first electrode layers 11 and the second electrode lay 13 are as the voltage of triboelectricity machine 1 or the output of electric current.
Adopt polyimide film (Kapton, the thickness 100um) 500HN of Du Pont) as the first high molecular polymer insulating barrier 12.The gold thin film of plating thickness 100nm on a surface of the first high molecular polymer insulating barrier 12, this gold thin film is the first electrode layer 11.Another lip-deep both sides of the first high molecular polymer insulating barrier 12 are provided with the support portion 14(height 500 μ m of two stripe shapes; width 0.5mm; length is 3cm), support portion 14 comprises that vertical-growth adopts polymethyl methacrylate at first zinc oxide nano-wire array 141 on high molecular polymer insulating barrier 12 surfaces and the protective layer 142(of coating zinc oxide nano-wire array).
Adopt the Copper Foil of thickness 50 μ m as the second electrode lay 13, a surface of this Copper Foil adopts the method for fine sandpaper polishing that the micro-nano concaveconvex structure of irregular height of projection within the scope of 350-500nm is set.
The second electrode lay 13, with the surface with support portion 14 facing to the first high molecular polymer insulating barrier 12 of micro-nano concaveconvex structure, stacks the second electrode lay 13 on the first high molecular polymer insulating barrier 12, obtains triboelectricity press proof product 1#.The edge of this triboelectricity machine seals with common adhesive plaster.
Triboelectricity press proof product 1# is at I-V(current-voltage) measurement in show typical open circuit feature.The stepping motor of life cycle vibration (0.33Hz and 0.13% deformation) makes the bending of triboelectricity press proof product 1# generating period and discharges, and the maximum output voltage of triboelectricity press proof product 1# and current signal have reached respectively 12V and 2 μ A.
Embodiment 2
As shown in Figure 3 and Figure 4, the present embodiment triboelectricity machine is of a size of 3cm × 3cm, and gross thickness is approximately 600 μ m.This triboelectricity machine comprises the first electrode layer 11, the first high molecular polymer insulating barrier 12, the second high molecular polymer insulating barrier 15, the second electrode lay 13 and support portion 14.The first electrode layer 11 and the second electrode lay 13 are as the voltage of triboelectricity machine 1 or the output of electric current.
Adopt polyimide film (thickness 100um) as the first high molecular polymer insulating barrier 12.The micro-nano concaveconvex structure of height of projection 150nm is set in one surface, the aluminium film of the upper plating in another surface thickness 100nm, this aluminium film is the first electrode layer 11.
Adopt pet film (thickness 100um) as the second high molecular polymer insulating barrier 15.Support portion 14 is set in one surface, the aluminium film of the upper plating in another surface thickness 100nm, this aluminium film is the second electrode lay 13.Support portion 14 as shown in figure 11, is arranged on four angles of the second high molecular polymer insulating barrier 15, and it is of a size of the little square of 2mm × 2mm of height 250 μ m.Support portion 14 comprises that vertical-growth adopts polymethyl methacrylate at second zinc oxide nano-wire array 141 on high molecular polymer insulating barrier 15 surfaces and the protective layer 142(of coating zinc oxide nano-wire array).
The first high molecular polymer insulating barrier 12 is with the surface with support portion 14 facing to the second high molecular polymer insulating barrier 15 of micro-nano concaveconvex structure, the first high molecular polymer insulating barrier 12 is stacked on the second high molecular polymer insulating barrier 15, obtain triboelectricity press proof product 2#.The edge of this triboelectricity machine seals with common adhesive plaster.
Triboelectricity press proof product 2# is at I-V(current-voltage) measurement in show typical open circuit feature.The stepping motor of life cycle vibration (0.33Hz and 0.13% deformation) makes the bending of triboelectricity press proof product 2# generating period and discharges, and the maximum output voltage of triboelectricity press proof product 2# and current signal have reached respectively 18V and 3-4 μ A.
Embodiment 3
As shown in Figure 5 and Figure 6, the present embodiment triboelectricity machine is of a size of 3cm × 3cm, and gross thickness is approximately 700 μ m left and right.This triboelectricity machine comprises the first electrode layer 11, the first high molecular polymer insulating barrier 12, thin layer 16, the second high molecular polymer insulating barrier 15, the second electrode lay 13 and support portion 14 between two parties.The first electrode layer 11 and the second electrode lay 13 are as the voltage of triboelectricity machine 1 or the output of electric current.
Adopt polyimide film (thickness 100um left and right) as the first high molecular polymer insulating barrier 12 and the second high molecular polymer insulating barrier 15.The first high molecular polymer insulating barrier 12 and the second high molecular polymer insulating barrier 15 arrange respectively the micro-nano concaveconvex structure of height of projection 150nm on a surface, the aluminium film of the upper plating in another surface thickness 100nm, this aluminium film is the first electrode layer 11 and the second electrode lay 13.
Adopt pet film (thickness 100um left and right) conduct thin layer 16 between two parties, on thin layer 16 surface, support portion 14 is set between two parties.Support portion 14 as shown in figure 12, is arranged on the surrounding of the second high molecular polymer insulating barrier 15, and it is of a size of the little square of 2mm × 2mm of height 20 μ m.Support portion 14 comprises that vertical-growth adopts polymethyl methacrylate at the zinc oxide nano-wire array 141 on thin layer 16 surfaces between two parties and the protective layer 142(of coating zinc oxide nano-wire array).
Thin layer 16 stacks on the surface with micro-nano concaveconvex structure of the first high molecular polymer insulating barrier 12 between two parties, then the second high molecular polymer insulating barrier 15 has micro-nano concaveconvex structure facing to thin layer 16 between two parties, stack between two parties on thin layer 16, obtain triboelectricity press proof product 3#.The edge of this triboelectricity machine seals with common adhesive plaster.
Triboelectricity press proof product 3# is at I-V(current-voltage) measurement in show typical open circuit feature.The stepping motor of life cycle vibration (0.33Hz and 0.13% deformation) makes the bending of triboelectricity press proof product 3# generating period and discharges, and the maximum output voltage of triboelectricity press proof product 3# and current signal have reached respectively 20V and 4 μ A.
Embodiment 4
As shown in Figure 7 and Figure 8, the present embodiment triboelectricity machine is of a size of 3cm × 3cm, and gross thickness is approximately 1000 μ m.This triboelectricity machine comprises the first electrode layer 21, the first high molecular polymer insulating barriers 22, friction electrode layer 23, the second high molecular polymer insulating barriers 24, the second electrode lay 25 and support portion 26.The output that the first electrode layer 21 and the second electrode lay 25 are triboelectricity machine 2 voltages or electric current; Another output that described friction electrode 23 is triboelectricity machine 2 voltages or electric current.
Adopt polyimide film (thickness 100um left and right) as the first high molecular polymer insulating barrier 22 and the second high molecular polymer insulating barrier 24.The first high molecular polymer insulating barrier 22 and the second high molecular polymer insulating barrier 24 arrange support portion 26 respectively on a surface, the aluminium film of the upper plating in another surface thickness 100nm, and this aluminium film is the first electrode layer 21 and the second electrode lay 25.Support portion 26 is stripe shape and is arranged on the both sides of high polymer layer, and it is of a size of the rectangular bar shaped of 3cm × 2mm of height 250 μ m.Support portion 26 comprises that vertical-growth is at the first high molecular polymer insulating barrier 22 and second zinc oxide nano-wire array 261 on high molecular polymer insulating barrier 24 surfaces and the protective layer 262(of coating zinc oxide nano-wire array employing polymethyl methacrylate).
Adopt the Copper Foil of thickness 100 μ m as friction electrode 23, two surfaces of this Copper Foil adopt the method for fine sandpaper polishing that the micro-nano concaveconvex structure of irregular height of projection within the scope of 350-500nm is set respectively.
Friction electrode 23 stacks on the surface with support portion 26 of the first high molecular polymer insulating barrier 22, then the second high molecular polymer insulating barrier 24 have support portion 26 facing to friction electrode 23, stack on friction electrode 23, obtain triboelectricity press proof product 4#.The edge of this triboelectricity machine seals with common adhesive plaster.
Triboelectricity press proof product 4# is at I-V(current-voltage) measurement in show typical open circuit feature.The stepping motor of life cycle vibration (0.33Hz and 0.13% deformation) makes the bending of triboelectricity press proof product 4# generating period and discharges, and the maximum output voltage of triboelectricity press proof product 4# and current signal have reached respectively 20V and 4 μ A
Triboelectricity machine of the present invention can be applied to various self-driven systems as touch-screen, electronic console, and have in potential using value field in other personal electric product, it has the effect that production cost is low, generating efficiency is high.
Such scheme comprises first-selected embodiment and when the optimal mode of this invention known for inventor while putting on record, above-described embodiment only provides as illustrative example.To many alienation of the specific embodiment disclosing in this explanation, do not depart from the spirit and scope of this invention, easily differentiate being.Therefore, this scope of invention is determined the claim by appended, and the special embodiment describing above being not limited to.
Claims (22)
1. a triboelectricity machine, is characterized in that, comprises the first electrode layer, the first high molecular polymer insulating barrier and the second electrode lay that are cascading;
Wherein, between described the first high molecular polymer insulating barrier and the second electrode lay, be provided with support portion, described support portion comprises the protective layer of zinc oxide nano-wire array and coating zinc oxide nano-wire array;
The first electrode layer and the second electrode lay are respectively the voltage of triboelectricity machine or two outputs of electric current.
2. triboelectricity machine according to claim 1, is characterized in that, described the second electrode lay material therefor is metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy, and described zinc oxide nano-wire array vertical-growth is on arbitrary surface of the first high molecular polymer insulating barrier and the second electrode lay apparent surface.
3. triboelectricity machine according to claim 2, it is characterized in that, on at least one surface of the first high molecular polymer insulating barrier and the second electrode lay apparent surface, be provided with micro-nano concaveconvex structure, the micro-nano concaveconvex structure arranging on described the first high molecular polymer surface of insulating layer is the nano concavo-convex structure of height of projection 50nm-300nm; The micro-nano concaveconvex structure arranging on described the second electrode lay surface is the micro-nano concaveconvex structure of height of projection 300nm-1 μ m.
4. triboelectricity machine according to claim 1, it is characterized in that, described triboelectricity machine is provided with the second high molecular polymer insulating barrier between the first high molecular polymer insulating barrier and the second electrode lay, described support portion is arranged between the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier, and described zinc oxide nano-wire array vertical-growth is on arbitrary surface of the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier apparent surface; The first electrode layer and the second electrode lay are respectively the voltage of triboelectricity machine or two outputs of electric current.
5. triboelectricity machine according to claim 4, it is characterized in that, on at least one surface of the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier apparent surface, be provided with micro-nano concaveconvex structure, the nano concavo-convex structure that described micro-nano concaveconvex structure is height of projection 50nm-300nm.
6. triboelectricity machine according to claim 4, is characterized in that, described triboelectricity machine further comprises thin layer between two parties, this between two parties thin layer be arranged between the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier; The first high molecular polymer insulating barrier is located at and between two parties between thin layer in described support portion, and/or between two parties between thin layer and the second high molecular polymer insulating barrier; Described zinc oxide nano-wire array vertical-growth is at the first high molecular polymer insulating barrier with between two parties on arbitrary surface of thin layer apparent surface, and/or the second high molecular polymer insulating barrier and between two parties on arbitrary surface of thin layer apparent surface.
7. triboelectricity machine according to claim 6, it is characterized in that, on at least one surface of the first high molecular polymer insulating barrier and between two parties thin layer apparent surface, and/or at least one surface of second high molecular polymer insulating barrier and thin layer apparent surface between two parties, be provided with micro-nano concaveconvex structure, the nano concavo-convex structure that described micro-nano concaveconvex structure is height of projection 50nm-300nm.
8. triboelectricity machine according to claim 6, is characterized in that, the described material therefor of thin layer is between two parties different with the second high molecular polymer insulating barrier material therefor from the first high molecular polymer insulating barrier, is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
9. according to the triboelectricity machine described in claim 1-8 any one, it is characterized in that, described the first high molecular polymer insulating barrier and/or the second high molecular polymer insulating barrier material therefor are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
10. according to the triboelectricity machine described in claim 4-9 any one, it is characterized in that, described the second electrode lay material therefor is selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
11. according to the triboelectricity machine described in claim 1-10 any one, it is characterized in that, described the first electrode layer material therefor is selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
12. according to the triboelectricity machine described in claim 1-11 any one, it is characterized in that, described protective layer material therefor is polymethyl methacrylate.
13. according to the triboelectricity machine described in claim 1-12 any one, it is characterized in that, the height of described support portion is 20-500 μ m.
14. triboelectricity machines according to claim 13, is characterized in that, described support portion arrangement mode, for being shaped as well word, is pitched word, zebra, arrayed cross or mouthful word.
15. 1 kinds of triboelectricity machines, is characterized in that, described triboelectricity machine comprises the first electrode layer being cascading, the first high molecular polymer insulating barrier, friction electrode layer, the second high molecular polymer insulating barrier and the second electrode lay;
Between wherein said the first high molecular polymer insulating barrier and friction electrode layer, and/or second high molecular polymer insulating barrier and friction be provided with support portion between electrode layer, described support portion comprises the protective layer of zinc oxide nano-wire array and coating zinc oxide nano-wire array, and described zinc oxide nano-wire array vertical-growth is on arbitrary surface of high polymer layer and friction electrode layer apparent surface;
Described the first electrode layer and the second electrode lay are an output of the dynamo-electric pressure of triboelectricity or electric current; Described friction electrode layer is another output of the dynamo-electric pressure of triboelectricity or electric current.
16. triboelectricity machines according to claim 15, it is characterized in that, on at least one surface of the first high molecular polymer insulating barrier and friction electrode layer apparent surface, and/or being provided with micro-nano concaveconvex structure at least one surface of second high molecular polymer insulating barrier and friction electrode layer apparent surface, the micro-nano concaveconvex structure arranging on described high polymer layer surface is the nano concavo-convex structure of height of projection 50nm-300nm; The micro-nano concaveconvex structure arranging in described friction electrode layer surface is the micro-nano concaveconvex structure of height of projection 300nm-1 μ m.
17. according to the triboelectricity machine described in claim 15 or 16, it is characterized in that, described friction electrode layer material therefor is metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
18. according to the triboelectricity machine described in claim 15-17 any one, it is characterized in that, described the first high molecular polymer insulating barrier and the second high molecular polymer insulating barrier material therefor are independently selected from respectively polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, fiber (regeneration) sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polyacrylate polymers film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber film, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film and polyethylene the third diphenol carbonate.
19. according to the triboelectricity machine described in claim 15-18 any one, it is characterized in that, described the first electrode layer and the second electrode lay material therefor are selected from indium tin oxide, Graphene, nano silver wire film, metal or alloy; Wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.
20. according to the triboelectricity machine described in claim 15-19 any one, it is characterized in that, described protective layer material therefor is polymethyl methacrylate.
21. according to the triboelectricity machine described in claim 15-20 any one, it is characterized in that, the height of described support portion is 20-500 μ m.
22. triboelectricity machines according to claim 21, is characterized in that, described support portion arrangement mode, for being shaped as well word, is pitched word, zebra, arrayed cross or mouthful word.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310181849.9A CN104167950B (en) | 2013-05-16 | 2013-05-16 | Friction generator |
| PCT/CN2013/090660 WO2014183457A1 (en) | 2013-05-16 | 2013-12-27 | Friction power generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310181849.9A CN104167950B (en) | 2013-05-16 | 2013-05-16 | Friction generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104167950A true CN104167950A (en) | 2014-11-26 |
| CN104167950B CN104167950B (en) | 2017-03-08 |
Family
ID=51897645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310181849.9A Active CN104167950B (en) | 2013-05-16 | 2013-05-16 | Friction generator |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104167950B (en) |
| WO (1) | WO2014183457A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682768A (en) * | 2015-03-19 | 2015-06-03 | 京东方科技集团股份有限公司 | Friction power generation structure and display device |
| CN105991064A (en) * | 2016-05-06 | 2016-10-05 | 纳智源科技（唐山）有限责任公司 | Tactile sensor based on friction power generators and robot tactile perception system |
| CN109606127A (en) * | 2018-12-20 | 2019-04-12 | 刘山平 | A kind of new-energy automobile |
| CN110995050A (en) * | 2019-12-18 | 2020-04-10 | 西安电子科技大学 | Discharging friction generator |
| CN113358725A (en) * | 2021-05-17 | 2021-09-07 | 西安交通大学 | Flexible electrochemical glucose sensor electrode and preparation method thereof |
| CN114747849A (en) * | 2022-04-25 | 2022-07-15 | 浙江师范大学 | Warning umbrella based on friction nanometer generator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2252443A1 (en) * | 1971-10-28 | 1973-05-03 | Science Res Council | ELECTROSTATIC GENERATOR |
| US20030067246A1 (en) * | 2001-10-05 | 2003-04-10 | Takahiro Sato | Unidirectional surface acoustic wave transducer |
| JP2008125230A (en) * | 2006-11-10 | 2008-05-29 | Olympus Corp | Inertia driving actuator |
| CN102683573A (en) * | 2012-05-09 | 2012-09-19 | 纳米新能源（唐山）有限责任公司 | Nano generator, nano generator set and self-powered system comprising nano generator or nano generator set |
| CN202904631U (en) * | 2012-11-12 | 2013-04-24 | 纳米新能源（唐山）有限责任公司 | Electronic tag communicating with electronic reader |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7291782B2 (en) * | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
| CN203057022U (en) * | 2012-12-27 | 2013-07-10 | 纳米新能源（唐山）有限责任公司 | Nanometer friction generator |
| CN203219203U (en) * | 2013-04-12 | 2013-09-25 | 纳米新能源（唐山）有限责任公司 | Power generation system |
| CN203377809U (en) * | 2013-04-24 | 2014-01-01 | 纳米新能源（唐山）有限责任公司 | Wind generator |
-
2013
- 2013-05-16 CN CN201310181849.9A patent/CN104167950B/en active Active
- 2013-12-27 WO PCT/CN2013/090660 patent/WO2014183457A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2252443A1 (en) * | 1971-10-28 | 1973-05-03 | Science Res Council | ELECTROSTATIC GENERATOR |
| US20030067246A1 (en) * | 2001-10-05 | 2003-04-10 | Takahiro Sato | Unidirectional surface acoustic wave transducer |
| JP2008125230A (en) * | 2006-11-10 | 2008-05-29 | Olympus Corp | Inertia driving actuator |
| CN102683573A (en) * | 2012-05-09 | 2012-09-19 | 纳米新能源（唐山）有限责任公司 | Nano generator, nano generator set and self-powered system comprising nano generator or nano generator set |
| CN202904631U (en) * | 2012-11-12 | 2013-04-24 | 纳米新能源（唐山）有限责任公司 | Electronic tag communicating with electronic reader |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682768A (en) * | 2015-03-19 | 2015-06-03 | 京东方科技集团股份有限公司 | Friction power generation structure and display device |
| US10291152B2 (en) | 2015-03-19 | 2019-05-14 | Boe Technology Group Co., Ltd. | Triboelectrification device and display device |
| CN105991064A (en) * | 2016-05-06 | 2016-10-05 | 纳智源科技（唐山）有限责任公司 | Tactile sensor based on friction power generators and robot tactile perception system |
| CN109606127A (en) * | 2018-12-20 | 2019-04-12 | 刘山平 | A kind of new-energy automobile |
| CN110995050A (en) * | 2019-12-18 | 2020-04-10 | 西安电子科技大学 | Discharging friction generator |
| CN113358725A (en) * | 2021-05-17 | 2021-09-07 | 西安交通大学 | Flexible electrochemical glucose sensor electrode and preparation method thereof |
| CN114747849A (en) * | 2022-04-25 | 2022-07-15 | 浙江师范大学 | Warning umbrella based on friction nanometer generator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104167950B (en) | 2017-03-08 |
| WO2014183457A1 (en) | 2014-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202818150U (en) | Nano friction generator | |
| CN103684035B (en) | Multilayer high power nano friction generator | |
| CN202679272U (en) | A nanometer generator with mixed piezoelectric and triboelectric films | |
| CN104167950A (en) | Friction generator | |
| CN103475262B (en) | Nanometer generator with piezoelectricity and frictional electricity mixed | |
| CN203057022U (en) | Nanometer friction generator | |
| CN202856656U (en) | Friction generator and friction generator unit | |
| CN102684546B (en) | Friction generator | |
| CN102749158B (en) | Self-powered pressure sensor | |
| CN202949379U (en) | High-power nano-friction generator | |
| KR101769459B1 (en) | Nano generator and method of manufacturing the same | |
| CN104578892B (en) | Integral type friction generator and vibrating sensor | |
| CN103856096B (en) | High power nano friction generator and preparation method thereof | |
| CN109474200B (en) | Friction generator based on miura-ori folding and having piezoelectric enhancement effect | |
| WO2013151590A2 (en) | Triboelectric generator | |
| CN205195598U (en) | Composite nanowire generator | |
| CN104124887A (en) | Wind power generator | |
| KR102214474B1 (en) | Generatorusingionicelastomer | |
| CN104348381B (en) | Wind power generation plant based on friction generator and system | |
| CN104135186A (en) | Cantilever beam structure friction generator and generator set | |
| CN103532425A (en) | Nanometer friction generator driven by magnetic field | |
| CN204361933U (en) | A kind of based on piezoelectricity and the electric energy collecting device that rubs | |
| CN104595120B (en) | Wind power generation plant | |
| CN103855421B (en) | Self-charging film lithium ion battery | |
| CN203722511U (en) | Integrated friction generator and vibrating sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |