CN103516242A - Three-level three-phase half-bridge inverter circuit - Google Patents
Three-level three-phase half-bridge inverter circuit Download PDFInfo
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Abstract
The invention provides a three-level three-phase half-bridge inverter circuit. The three-level three-phase half-bridge inverter circuit comprises three same single-phase half-bridge circuits. Each single-phase half-bridge circuit comprises an ionization electrolyte capacitor C1, an ionization electrolyte capacitor C4, a capacitor C9, a diode D1, a diode D2, a diode D3, a diode D10, a high-power switching tube Q1, a high-power switching tube Q2, a high-power switching tube Q3, a high-power switching tube Q 10, and an electrical inductor L1. Based on a traditional three-phase inverter circuit topology, auxiliary access bridge arms at the follow current stage are added, and the upper bridge arm and the lower bridge arm work in the positive half period of sine waves and the negative half period of sine waves respectively. At the follow current stage, the auxiliary bridge arms are used and a low-frequency switch is adopted, so that switch consumption generated in a high-power inverter is effectively lowered. SPWM is adopted in the whole system, and the three-phase pure sine waves are output. By the adoption of the design of modularized parallel redundancy, the reliability is high and the fault of a single module cannot influence running of the system. In addition, the capacity can be increased and decreased according to needs, so that capacity enlargement is convenient. The three-phase-independent inverting method has excellent 100% unbalance load capacity. Besides, the system can provide single-phase alternating currents and three-phase alternating currents at the same time.
Description
Technical field
The present invention relates to a kind of three level three-phase half-bridge inversion circuits, belong to electric and electronic technical field.
Background technology
Three level three-phase half-bridge inversion circuits are in 300kW Wave energy generating system, because oceanographic buoy is converting mechanical energy after electric energy to, through submarine cable long-distance transmissions, need to adopt DC high voltage, generally more than 1000V, and traditional high-power converter technique adopts high-power IGBT module, when using High ireguency SPWM modulation control strategy, Fig. 1 is common three-phase half-bridge inversion circuit, because it all works in high frequency in the whole cycle, exist switching loss to cause efficiency low greatly, the problem that capacity does not increase, therefore be necessary to develop a kind of novel inverter circuit.
Summary of the invention
In view of this, the invention provides a kind of three level three-phase half-bridge inversion circuits, can avoid upper and lower bridge arm all to work in high frequency in the whole cycle, effectively reduce switching loss, raise the efficiency.
A level three-phase half-bridge inversion circuit, this inverter circuit comprises three identical single-phase semi-bridge circuit;
Described single-phase semi-bridge circuit comprises ionization electrolyte capacitance C1, C4, capacitor C 9, diode D1, D2, D3, D10, high-power switch tube Q1, Q2, Q3, Q10, inductance L 1;
The positive pole of ionization electrolyte capacitance C1 connects direct current input+DCBUS, the negative pole of ionization electrolyte capacitance C1 connects the positive pole of ionization electrolyte capacitance C4, the negative pole of ionization electrolyte capacitance C4 connects direct current input-DCBUS, the positive pole of diode D1 is connected between ionization electrolyte capacitance C1 and ionization electrolyte capacitance C4, the negative pole of diode D1 connects the C utmost point of high-power switch tube Q1, the negative pole of diode D2 is also connected between ionization electrolyte capacitance C1 and ionization electrolyte capacitance C4, the positive pole of diode D2 connects the E utmost point of high-power switch tube Q2, the E utmost point of high-power switch tube Q1 connects the C utmost point of high-power switch tube Q2, link connects respectively the E utmost point of high-power switch tube Q3 and the C utmost point of high-power switch tube Q10, the C utmost point of high-power switch tube Q3 connects direct current input+DCBUS, the E utmost point of high-power switch tube Q10 connects direct current input-DCBUS, diode D3 is in parallel with high-power switch tube Q3, it is the E utmost point of the positive pole connection high-power switch tube Q3 of diode D3, diode D10 is in parallel with high-power switch tube Q10, it is the E utmost point of the positive pole connection high-power switch tube Q10 of diode D10, one end of inductance L 1 is connected on the link of high-power switch tube Q1 and high-power switch tube Q2, the other end is the output of the U utmost point, between the central point N of the U utmost point and the inverter circuit utmost point, access capacitor C 9.
Beneficial effect:
The present invention is on traditional three phase inverter bridge circuit topology basis, increased the auxiliary channel brachium pontis in afterflow stage, Q1, Q2, Q6, Q7, Q8 ,Q9 place brachium pontis have been increased, upper and lower bridge arm works in respectively sinusoidal wave positive half period and negative half period, the afterflow stage adopts low frequency switch by auxiliary brachium pontis, effectively reduces the switching loss that high power contravariant device exists.Whole system adopts SPWM modulation, output three-phase pure sine wave; The design of employing Modularized parallel redundant, reliability is high, and individual module fault, does not affect the operation of system; In addition, capacity can increase or reduce according to needs, is convenient to dilatation; Three-phase independently inverting possesses 100% excellent unbalanced load ability; System can provide single, three-phase alternating current simultaneously.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of common three-phase half-bridge inversion circuit.
Fig. 2 is the schematic diagram of the present invention's three level three-phase half-bridge inversion circuits.
Fig. 3 is the transient circuit of Q3 conducting in the single-phase tri-level half-bridge inverter circuit A of the present invention's equivalence.
Fig. 4 is the transient circuit that in the single-phase tri-level half-bridge inverter circuit A of the present invention's equivalence, Q3 turn-offs.
Fig. 5 is the transient circuit of Q10 conducting in the single-phase tri-level half-bridge inverter circuit A of the present invention's equivalence.
Fig. 6 is the transient circuit that in the single-phase tri-level half-bridge inverter circuit A of the present invention's equivalence, Q10 turn-offs.
Fig. 7 is the output waveform of three-phase tri-level inverter circuit of the present invention.
Embodiment
Below in conjunction with the accompanying drawing embodiment that develops simultaneously, describe the present invention.
As shown in Figure 2, the invention provides a kind of three level three-phase half-bridge inversion circuits, this inverter circuit is detachable is three independently single-phase semi-bridge circuit A, B, C.
Single-phase semi-bridge circuit A comprises ionization electrolyte capacitance C1, C4, capacitor C 9, diode D1, D2, D3, D10, high-power switch tube Q1, Q2, Q3, Q10, inductance L 1;
The positive pole of ionization electrolyte capacitance C1 connects direct current input+DCBUS, the negative pole of ionization electrolyte capacitance C1 connects the positive pole of ionization electrolyte capacitance C4, the negative pole of ionization electrolyte capacitance C4 connects direct current input-DCBUS, the positive pole of diode D1 is connected between ionization electrolyte capacitance C1 and ionization electrolyte capacitance C4, the negative pole of diode D1 connects the C utmost point of high-power switch tube Q1, the negative pole of diode D2 is also connected between ionization electrolyte capacitance C1 and ionization electrolyte capacitance C4, the positive pole of diode D2 connects the E utmost point of high-power switch tube Q2, the E utmost point of high-power switch tube Q1 connects the C utmost point of high-power switch tube Q2, link connects respectively the E utmost point of high-power switch tube Q3 and the C utmost point of high-power switch tube Q10, the C utmost point of high-power switch tube Q3 connects direct current input+DCBUS, the E utmost point of high-power switch tube Q10 connects direct current input-DCBUS, diode D3 is in parallel with high-power switch tube Q3, it is the E utmost point of the positive pole connection high-power switch tube Q3 of diode D3, diode D10 is in parallel with high-power switch tube Q10, it is the E utmost point of the positive pole connection high-power switch tube Q10 of diode D10, one end of inductance L 1 is connected on the link of high-power switch tube Q1 and high-power switch tube Q2, the other end is the output of the U utmost point, between the U utmost point and the N utmost point, access capacitor C 9.
Single-phase semi-bridge circuit B comprises ionization electrolyte capacitance C2, C5, capacitor C 8, diode D4, D6, D7, D11, high-power switch tube Q4, Q6, Q7, Q11, inductance L 2;
The positive pole of ionization electrolyte capacitance C2 connects direct current input+DCBUS, the negative pole of ionization electrolyte capacitance C2 connects the positive pole of ionization electrolyte capacitance C5, the negative pole of ionization electrolyte capacitance C5 connects direct current input-DCBUS, the positive pole of diode D6 is connected between ionization electrolyte capacitance C2 and ionization electrolyte capacitance C5, the negative pole of diode D6 connects the C utmost point of high-power switch tube Q6, the negative pole of diode D7 is also connected between ionization electrolyte capacitance C2 and ionization electrolyte capacitance C5, the positive pole of diode D7 connects the E utmost point of high-power switch tube Q7, the E utmost point of high-power switch tube Q6 connects the C utmost point of high-power switch tube Q7, link connects respectively the E utmost point of high-power switch tube Q4 and the C utmost point of high-power switch tube Q11, the C utmost point of high-power switch tube Q4 connects direct current input+DCBUS, the E utmost point of high-power switch tube Q11 connects direct current input-DCBUS, diode D4 is in parallel with high-power switch tube Q4, it is the E utmost point of the positive pole connection high-power switch tube Q4 of diode D4, diode D11 is in parallel with high-power switch tube Q11, it is the E utmost point of the positive pole connection high-power switch tube Q11 of diode D11, one end of inductance L 2 is connected on the link of high-power switch tube Q6 and high-power switch tube Q7, the other end is the output of the V utmost point, between the V utmost point and the inverter circuit central point N utmost point, access capacitor C 8.
Single-phase semi-bridge circuit C comprises ionization electrolyte capacitance C3, C6, capacitor C 7, diode D5, D8, D9, D12, high-power switch tube Q5, Q8, Q9, Q12, inductance L 3;
The positive pole of ionization electrolyte capacitance C3 connects direct current input+DCBUS, the negative pole of ionization electrolyte capacitance C3 connects the positive pole of ionization electrolyte capacitance C6, the negative pole of ionization electrolyte capacitance C6 connects direct current input-DCBUS, the positive pole of diode D8 is connected between ionization electrolyte capacitance C3 and ionization electrolyte capacitance C6, the negative pole of diode D8 connects the C utmost point of high-power switch tube Q8, the negative pole of diode D9 is also connected between ionization electrolyte capacitance C3 and ionization electrolyte capacitance C6, the positive pole of diode D9 connects the E utmost point of high-power switch tube Q9, the E utmost point of high-power switch tube Q8 connects the C utmost point of high-power switch tube Q9, link connects respectively the E utmost point of high-power switch tube Q5 and the C utmost point of high-power switch tube Q12, the C utmost point of high-power switch tube Q5 connects direct current input+DCBUS, the E utmost point of high-power switch tube Q12 connects direct current input-DCBUS, diode D5 is in parallel with high-power switch tube Q5, it is the E utmost point of the positive pole connection high-power switch tube Q5 of diode D5, diode D12 is in parallel with high-power switch tube Q12, it is the E utmost point of the positive pole connection high-power switch tube Q12 of diode D12, one end of inductance L 3 is connected on the link of high-power switch tube Q8 and high-power switch tube Q9, the other end is the output of the W utmost point, between the W utmost point and the N utmost point, access capacitor C 7.
The B of all high-power switch tubes, extremely all as trigger end, receives triggering signal conducting or turn-offs high-power switch tube.
The single-phase semi-bridge circuit A of take is example, and its course of work is as follows:
(1) high-power switch tube Q3 conduction period
In exchanging output positive half period, the high power switch switching tube Q1 of auxiliary brachium pontis is always in conducting state, and switching frequency is 50Hz; High-power switch tube Q10 is always in off state.On high-power switch tube Q3, apply and drive as High ireguency SPWM waveform, in high-power switch tube Q3 conduction period, the course of work is shown in Fig. 3 circuit, and current path is: C1 → Q3 → L1 → C7 → C1.
(2) high-power switch tube Q3 blocking interval
When high-power switch tube Q3 is after off state, output inductor can produce self-excitation electromotive force, keeps electric current flowing from left to right, sees Fig. 4 circuit, and its current path is: L1 → C7 → D1 → Q1 → L1.
In this stage, avoid the current flowing path of conventional half bridge topology:
L1→C7→C4→D10→L1；
Can effectively reduce the HF switch loss that lower half-bridge switch pipe exists.
(3) high-power switch tube Q10 conduction period
In exchanging output negative half-cycle, the high-power switch tube Q2 of auxiliary brachium pontis is always in conducting state, and switching frequency is 50Hz; High-power switch tube Q3 is always in off state.On high-power switch tube Q10, apply and drive as High ireguency SPWM waveform, in high-power switch tube Q10 conduction period, the course of work is shown in 5 circuit, and current path is: C4 → C7 → L1 → Q10 → C4.
(4) high-power switch tube Q10 blocking interval
When high-power switch tube Q10 is after off state, output inductor can produce self-excitation electromotive force, keeps flowing of electric current right-to-left, sees 6 circuit, and its current path is: L1 → Q2 → D2 → C7 → C7 → L1.
In this stage, avoid the current flowing path of conventional half bridge topology:
L1→D3→C1→C7→L1。
Can effectively reduce the HF switch loss that half-bridge switch pipe exists.
Single-phase semi-bridge switch waveform schematic diagram as shown in Figure 7.
In sum, these are only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. three level three-phase half-bridge inversion circuits, is characterized in that, this inverter circuit comprises three identical single-phase semi-bridge circuit;
Described single-phase semi-bridge circuit comprises ionization electrolyte capacitance C1, C4, capacitor C 9, diode D1, D2, D3, D10, high-power switch tube Q1, Q2, Q3, Q10, inductance L 1;
The positive pole of ionization electrolyte capacitance C1 connects direct current input+DCBUS, the negative pole of ionization electrolyte capacitance C1 connects the positive pole of ionization electrolyte capacitance C4, the negative pole of ionization electrolyte capacitance C4 connects direct current input-DCBUS, the positive pole of diode D1 is connected between ionization electrolyte capacitance C1 and ionization electrolyte capacitance C4, the negative pole of diode D1 connects the C utmost point of high-power switch tube Q1, the negative pole of diode D2 is also connected between ionization electrolyte capacitance C1 and ionization electrolyte capacitance C4, the positive pole of diode D2 connects the E utmost point of high-power switch tube Q2, the E utmost point of high-power switch tube Q1 connects the C utmost point of high-power switch tube Q2, link connects respectively the E utmost point of high-power switch tube Q3 and the C utmost point of high-power switch tube Q10, the C utmost point of high-power switch tube Q3 connects direct current input+DCBUS, the E utmost point of high-power switch tube Q10 connects direct current input-DCBUS, diode D3 is in parallel with high-power switch tube Q3, it is the E utmost point of the positive pole connection high-power switch tube Q3 of diode D3, diode D10 is in parallel with high-power switch tube Q10, it is the E utmost point of the positive pole connection high-power switch tube Q10 of diode D10, one end of inductance L 1 is connected on the link of high-power switch tube Q1 and high-power switch tube Q2, the other end is the output of the U utmost point, between the central point N of the U utmost point and the inverter circuit utmost point, access capacitor C 9.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104980057A (en) * | 2015-08-03 | 2015-10-14 | 阳光电源股份有限公司 | Three-phase inverter and control method thereof |
| CN105337525A (en) * | 2015-11-01 | 2016-02-17 | 华南理工大学 | Half-bridge inverter eliminating dead zone time energy backflow, and control method thereof |
| CN105827122A (en) * | 2016-05-03 | 2016-08-03 | 扬州国扬电子有限公司 | Three-level power module with electrode connection points arranged in column |
| CN108336920A (en) * | 2018-03-29 | 2018-07-27 | 阳光电源股份有限公司 | A kind of topological circuit of inverter, regulation and control method and photovoltaic generating system |
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| CN102545672A (en) * | 2010-12-17 | 2012-07-04 | 富士电机株式会社 | Three level inverter device |
| CN102624266A (en) * | 2012-03-16 | 2012-08-01 | 华为技术有限公司 | Three-level inverter circuit |
| CN203537258U (en) * | 2013-09-22 | 2014-04-09 | 中国船舶重工集团公司第七一〇研究所 | Three-level three-phase half-bridge inverter circuit |
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2013
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Patent Citations (4)
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| US20090244936A1 (en) * | 2008-03-31 | 2009-10-01 | Sma Solar Technology Ag | Three-phase inverter |
| CN102545672A (en) * | 2010-12-17 | 2012-07-04 | 富士电机株式会社 | Three level inverter device |
| CN102624266A (en) * | 2012-03-16 | 2012-08-01 | 华为技术有限公司 | Three-level inverter circuit |
| CN203537258U (en) * | 2013-09-22 | 2014-04-09 | 中国船舶重工集团公司第七一〇研究所 | Three-level three-phase half-bridge inverter circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104980057A (en) * | 2015-08-03 | 2015-10-14 | 阳光电源股份有限公司 | Three-phase inverter and control method thereof |
| CN105337525A (en) * | 2015-11-01 | 2016-02-17 | 华南理工大学 | Half-bridge inverter eliminating dead zone time energy backflow, and control method thereof |
| CN105827122A (en) * | 2016-05-03 | 2016-08-03 | 扬州国扬电子有限公司 | Three-level power module with electrode connection points arranged in column |
| CN108336920A (en) * | 2018-03-29 | 2018-07-27 | 阳光电源股份有限公司 | A kind of topological circuit of inverter, regulation and control method and photovoltaic generating system |
| CN108336920B (en) * | 2018-03-29 | 2020-05-22 | 阳光电源股份有限公司 | Topological circuit of inverter, regulation and control method and photovoltaic power generation system |
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Application publication date: 20140115 |