CN102195507A - Transformer-less grid-connected inverting circuit - Google Patents
Transformer-less grid-connected inverting circuit Download PDFInfo
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- CN102195507A CN102195507A CN2011101327981A CN201110132798A CN102195507A CN 102195507 A CN102195507 A CN 102195507A CN 2011101327981 A CN2011101327981 A CN 2011101327981A CN 201110132798 A CN201110132798 A CN 201110132798A CN 102195507 A CN102195507 A CN 102195507A
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Abstract
The invention relates to a transformer-less grid-connected inverting circuit. The circuit comprises a high-frequency modulation module connected with a direct current (DC) input power, an output module connected with a mains supply, a low-frequency follow current module respectively connected with the high-frequency modulation module and the output module, and a clamping functional module connected with the high-frequency modulation module and the low-frequency follow current module, wherein, the high-frequency modulation module is provided with four high-frequency switching tubes; the low-frequency follow current module is provided with two low-frequency switching tubes and two fast recovery diodes; the clamping functional module is provided with two capacitors with equal capacitance value and two clamping diodes; and the output module is provided with two inductors with equal inductance value, and the two inductors are respectively connected on a null line end and a live wire end of the mains supply. The transformer-less grid-connected inverting circuit has the advantages of reduced common mode current, higher operating efficiency relative to a common bipolar modulation single-phase full bridge inverting circuit, and better electromagnetic compatibility relative to a common unipolar modulation single-phase full bridge inverting circuit.
Description
Technical field
The present invention relates to a kind of transformerless grid-connected inverter circuit.
Background technology
In the photovoltaic parallel in system, owing to have parasitic capacitance between photovoltaic panel and the ground, having common mode current in the process of parallel network power generation produces, electromagnetic radiation and potential safety hazard have been increased, produce in order to manage to suppress this common mode current, mainly contain two kinds of solution routes: one, adopt the isolated form photovoltaic combining inverter of power frequency or high frequency transformer, can make civil power and solar panel system that electrical isolation is arranged like this, can avoid the leakage current of cell panel to producing between the earth.Two, adopt the non-isolated grid-connected topology that can effectively suppress the common mode current size.
But adopt the inverter circuit of transformer isolation to have following shortcoming: if adopt Industrial Frequency Transformer, volume is big, Heavy Weight and price are expensive.If adopt high frequency transformer, what power conversion circuit will be divided into.The control more complicated, efficient is lower.
And there is the defective of several aspects in general non-isolation inversion topological:
One, traditional single-phase full-bridge inverter, if adopt the bipolarity modulation, though electromagnetic interference is little, the conversion efficiency of inverter is low,
Two, traditional single-phase full-bridge inverter, if adopt the unipolarity modulation, then electromagnetic interference is serious, common mode current is bigger.
Summary of the invention
At suppressing the deficiency that common mode current produces the technical scheme existence of being adopted in the above-mentioned parallel network power generation process, the invention provides a kind of transformerless grid-connected inverter circuit, this circuit has not only greatly reduced common mode current, and has effectively improved operating efficiency.
Realize that technical scheme of the present invention is:
A kind of transformerless grid-connected inverter circuit, the output module that described circuit comprises the high frequency modulation module that is connected with direct-current input power supplying, be electrically connected with the city, the low frequency afterflow module that is connected with output module with high frequency modulation module respectively and the clamper functional module that is connected with low frequency afterflow module with high frequency modulation module, wherein:
Described high frequency modulation module has four HF switch pipes, described low frequency afterflow module has two low frequency switching tubes and two fast recovery diodes, described clamper functional module has two electric capacity and two clamp diodes that capacitance is identical, described output module has two inductance that inductance value is identical, and these two inductance are connected to the zero line side and the live wire end of civil power.
When described four HF switch pipes and two low frequency switching tubes adopt igbt (IGBT) respectively, wherein:
The collector electrode of the collector electrode of the first HF switch pipe and the 4th HF switch pipe is connected and is connected with the positive pole of direct-current input power supplying simultaneously, the emitter of the emitter of the second HF switch pipe and the 3rd HF switch pipe is connected and is connected with the negative pole of direct-current input power supplying simultaneously, and the emitter of the 4th HF switch pipe is connected with the collector electrode of the 3rd HF switch pipe;
The collector electrode of the first low frequency switching tube is connected with the emitter of the first HF switch pipe, the emitter of the second low frequency switching tube is connected with the collector electrode of the second HF switch pipe, the emitter of the first low frequency switching tube is connected with the collector electrode of the second low frequency switching tube, the negative electrode of first fast recovery diode is connected with the collector electrode link of the first low frequency switching tube with the emitter of the first HF switch pipe, the anode of second fast recovery diode is connected with the collector electrode link of the second HF switch pipe with the emitter of the second low frequency switching tube, and the anode of first fast recovery diode is connected with the negative electrode of second fast recovery diode;
First electric capacity and the connection of second capacitances in series are connected between the positive pole and negative pole of direct-current input power supplying simultaneously, and the first electric capacity both end voltage equates with the second electric capacity both end voltage, is respectively half of DC input voitage; The negative electrode of first clamp diode is connected with the collector electrode of the first low frequency switching tube and the cathode connection terminal of first fast recovery diode with the emitter of the first HF switch pipe, the anode of second clamp diode is connected with the collector electrode of the second HF switch pipe and the anode link of second fast recovery diode with the emitter of the second low frequency switching tube, and the anode of first clamp diode is connected with the negative electrode of second clamp diode and is connected with the second electric capacity link with first electric capacity simultaneously;
An inductance that is connected in two inductance of the zero line side of civil power and live wire end is not connected with the collector electrode link of the second low frequency switching tube with the emitter of the first low frequency switching tube with city's electric connecting terminal, and another inductance is not connected with the cathode connection terminal of second fast recovery diode with the anode of first fast recovery diode with the electrical network link.
When described four HF switch pipes and two low frequency switching tubes adopt power field effect transistor (MOSFET) respectively, wherein:
The drain electrode of the drain electrode of the first HF switch pipe and the 4th HF switch pipe is connected and is connected with the positive pole of direct-current input power supplying simultaneously, the source electrode of the source electrode of the second HF switch pipe and the 3rd HF switch pipe is connected and is connected with the negative pole of direct-current input power supplying simultaneously, and the source electrode of the 4th HF switch pipe is connected with the drain electrode of the 3rd HF switch pipe;
The drain electrode of the first low frequency switching tube is connected with the source electrode of the first HF switch pipe, the source electrode of the second low frequency switching tube is connected with the drain electrode of the second HF switch pipe, the source electrode of the first low frequency switching tube is connected with the drain electrode of the second low frequency switching tube, the negative electrode of first fast recovery diode is connected with the drain electrode link of the first low frequency switching tube with the source electrode of the first HF switch pipe, the anode of second fast recovery diode is connected with the drain electrode link of the second HF switch pipe with the source electrode of the second low frequency switching tube, and the anode of first fast recovery diode is connected with the negative electrode of second fast recovery diode;
First electric capacity and the connection of second capacitances in series are connected between the positive pole and negative pole of direct-current input power supplying simultaneously, and the first electric capacity both end voltage equates with the second electric capacity both end voltage, is respectively half of DC input voitage; The negative electrode of first clamp diode is connected with the drain electrode of the first low frequency switching tube and the cathode connection terminal of first fast recovery diode with the source electrode of the first HF switch pipe, the anode of second clamp diode is connected with the drain electrode of the second HF switch pipe and the anode link of second fast recovery diode with the source electrode of the second low frequency switching tube, and the anode of first clamp diode is connected with the negative electrode of second clamp diode and is connected with the second electric capacity link with first electric capacity simultaneously;
An inductance that is connected in two inductance of the zero line side of civil power and live wire end is not connected with the drain electrode link of the second low frequency switching tube with the source electrode of the first low frequency switching tube with city's electric connecting terminal, and another inductance is not connected with the cathode connection terminal of second fast recovery diode with the anode of first fast recovery diode with the electrical network link.
High frequency modulated part in the invention described above circuit is mainly finished the SPWM modulation, and low frequency afterflow module is mainly finished the switching of civil power positive-negative half-cycle, the task of electric current commutation.And described low frequency afterflow module must comprise and is connected between the high frequency modulation module, that is to say that connection from the flow process of the energy of the energy of DC power supply input is: high frequency modulation module → low frequency afterflow module → output module → high frequency modulation module perhaps is high frequency modulation module → output module → low frequency afterflow module → high frequency modulation module.
The present invention is directed to the problem that general non-isolation inversion topological exists, proposed a kind of inversion topological, make direct-current input power supplying anode and negative terminal voltage voltage to earth present low-frequency fluctuation, reduce common mode current greatly, and increase work efficiency.Can reduce the voltage stress grade of part HF switch pipe simultaneously by diode clamp, raise the efficiency.At the shortcoming of common transformerless grid-connected inverter circuit, the present invention then realizes the purpose improving electromagnetic interference, increase work efficiency by improving common full-bridge and its corresponding modulation system.In the current flowing process, electric current flows through the HF switch pipe successively, and low frequency switching tube, inductance, civil power and inductance (two inductance must be arranged) flow into the negative terminal of direct-current input power supplying at last through the HF switch pipe.According to the principle of equal effects, in the time of normally, according to equivalent principle of stacking, the direct-current input power supplying output negative terminal voltage of (GND) over the ground adds half low frequency line voltage for half DC power supply input voltage, consider that direct voltage is constant, so the negative terminal of direct-current input power supplying fluctuation voltage over the ground is half low frequency line voltage.When high frequency modulation module is closed, electric current circulates between low frequency afterflow module and output module, civil power, and low frequency switching tube current potential is clamped to half DC input voitage at this moment, so DC input voitage negative terminal voltage over the ground also has only half DC power supply input voltage to add half low frequency line voltage.Reduced the fluctuation amplitude of common-mode voltage so effectively, thereby also reduced the size of common mode current, the full-bridge bipolarity is modulated relatively, and inductance has less current ripples, thereby has reduced switching loss, has improved efficient.Diode clamp is to the mid point of direct voltage simultaneously, can reduce the voltage stress grade of specific the first and second two HF switch pipes, make emitter (or source electrode) voltage of the HF switch pipe of winning can not be lower than 1/2 input supply voltage, and the collector electrode of the second HF switch pipe (or drain electrode) voltage can not be higher than 1/2 input supply voltage, then first, the voltage stress grade of the second two HF switch pipes can be 1/2 input supply voltage, the and the voltage stress of two clamper usefulness diodes also is the input power supply half, but the 3rd, the voltage stress of the 4 two HF switch pipe is the input supply voltage grade.Its core concept is: in the time of the normal delivery energy, adopt the Unipolar SPWM modulation, and in the time of afterflow, then disconnect dc terminal and exchange being connected of end, eliminate electromagnetic interference.
Common relatively bipolarity modulation single-phase full bridge inverter circuit, this circuit efficiency height.And for common unipolarity modulation single-phase full bridge inverter circuit, this Electric Circuit Electromagnetic Compatibility is good, and some specific switch tube voltage stress levels only needs a half voltage of input voltage grade.
Description of drawings
Fig. 1 is a schematic block circuit diagram of the present invention;
Fig. 2 is the embodiment of the invention 1 circuit theory diagrams;
Current direction schematic diagram when Fig. 3 is the positive half cycle conducting of the embodiment of the invention 1 circuit;
Electric current afterflow schematic diagram when Fig. 4 is the shutoff of the embodiment of the invention 1 circuit positive half period;
Fig. 5 is the embodiment of the invention current direction figure of 1 circuit negative half period conduction period;
Afterflow schematic diagram when Fig. 6 is the shutoff of the embodiment of the invention 1 circuit negative half period;
Fig. 7 is the embodiment of the invention 1 a circuit waveform sequential schematic diagram;
Fig. 8 is the embodiment of the invention 1 a circuit hypothesis positive half period, because the current direction figure of some difference when causing S5 to open earlier;
Fig. 9 is the embodiment of the invention 1 a circuit hypothesis negative half-cycle, because the current direction figure of some difference when causing S6 to open earlier;
Figure 10 is the embodiment of the invention 2 circuit theory diagrams.
Embodiment
The technical staff of the technical field of the invention embodiments of the invention is described with reference to the accompanying drawings, so that can implement the present invention easily.
The embodiments of the invention circuit comprises high frequency modulation module, low frequency afterflow module, output module and clamper functional module, direct-current input power supplying is a solar cell input power supply among the following embodiment, Fig. 1 shows the theory diagram of this circuit, high frequency modulation module is the first HF switch pipe S1 by four HF switch pipes, the second HF switch pipe S4, the 3rd HF switch pipe S5 and the 4th HF switch pipe S6 constitute, low frequency afterflow module is the first low frequency switching tube S2 by two low frequency switching tubes, the second low frequency switching tube S3 and two fast recovery diodes are the first fast recovery diode D1, the second fast recovery diode D2 constitutes, the clamper functional module is first capacitor C 1 by two identical electric capacity of capacitance, second capacitor C 2 and two clamp diodes are the first clamp diode D3, the second clamp diode D4 constitutes, output module is by two inductance L 1 that inductance value is identical, L2 constitutes, and these two inductance L 1, L2 is connected to the live wire end and the zero line side of civil power.
The low frequency switching tube S2, the S3 that constitute HF switch pipe S1, S4, S5, S6 and the formation low frequency modulations module of high frequency modulation module among the present invention all can adopt igbt (IGBT) or power field effect transistor (MOSFET), and diode D1 and D2 should be fast recovery diodes.
Below adopt igbt (IGBT) or power field effect transistor (MOSFET) to be example explanation the present invention with regard to each switching tube S1, S2, S3, S4, S5, S6 respectively.
Embodiment 1:
Four HF switch pipe S1, S4, S5, S6 and low frequency switching tube S2, S3 adopt igbt (IGBT) respectively, its circuit theory as shown in Figure 2, wherein the collector electrode of the collector electrode of switching tube S1 and switching tube S6 is connected and is connected with the positive pole of solar cell input simultaneously, the emitter of the emitter of switching tube S4 and switching tube S5 is connected and is connected with the negative pole of solar cell input simultaneously, and the emitter of switching tube S6 is connected with the collector electrode of switching tube S5.The collector electrode of switching tube S2 is connected with the emitter of switching tube S1, the emitter of switching tube S3 is connected with the collector electrode of switching tube S4, the emitter of switching tube S2 is connected with the collector electrode of switching tube S3, the negative electrode of diode D1 is connected with the collector electrode link of switching tube S2 with the emitter of switching tube S1, the anode of diode D2 is connected with the collector electrode link of switching tube S4 with the emitter of switching tube S3, and the anode of diode D1 is connected with the negative electrode of diode D2.Capacitor C 1 is identical with capacitor C 2 capacitances, capacitor C 1 and C2 are connected in series and are connected simultaneously between the positive pole and negative pole of solar cell, capacitor C 1 both end voltage equates with capacitor C 2 both end voltage, be half of solar cell input voltage, the negative electrode of diode D 3 is connected with the collector electrode of switching tube S2 and the cathode connection terminal of diode D1 with the emitter of switching tube S1, the anode of diode D4 is connected with the collector electrode of switching tube S4 and the anode link of diode D2 with the emitter of switching tube S3, and the anode of diode D3 is connected with the negative electrode of diode D4 and is connected with capacitor C 2 links with capacitor C 1 simultaneously.Inductance L 1 is not connected with the collector electrode link of switching tube S3 with the emitter of switching tube S2 with the live wire link of civil power, and inductance L 2 is not connected with the cathode connection terminal of diode D2 with the anode of diode D1 with the zero line link of civil power.
Described high frequency modulated part is mainly finished the SPWM modulation, and low frequency afterflow module is mainly finished the switching of civil power positive-negative half-cycle, the task of electric current commutation.Its operation principle is in the time of the positive half period conducting, the solar cell input negative terminal voltage of (GND) end over the ground is that 1/2 solar cell input voltage adds 1/2 line voltage according to the principle of equal effects, and when closing intermittent current, suppose to be in this moment positive half period, because switching tube S1 and S5 turn-off, blocked being electrically connected between solar cell input and the civil power, S5 and S6 divide direct current solar cell input voltage equally, exist so the voltage fluctuation over the ground of solar cell input voltage only has half city's electro-mechanical wave of low frequency, make that the leakage current on the parasitic capacitance is very little.In addition, because the existence of clamper functional module guarantees that HF switch pipe S1, S4 are half input voltage.Suppose that the solar cell input voltage is 600V, then the voltage stress of S1 and S4 is half of solar cell input direct voltage, i.e. 300V, and to require also only be half of solar cell input voltage to the voltage stress of clamp diode D3, D4 simultaneously.But the voltage stress of switching tube S5 and S6, S2 and S 3 and diode D1 and D2 then is the solar cell input voltage value.
Current direction figure when Fig. 3 is the positive half cycle conducting of present embodiment 1 circuit, electric current flows through S1 successively, S2, L1, civil power, L2 is flowed into the negative terminal of solar cell at last by S5.
Fig. 4 is the current direction figure that the positive half period of present embodiment 1 circuit closes intermittent current, and this moment, S1 and S5 turn-offed, and electric current passes through L1, civil power, and L2, diode D1 and S2 flow back to inductance L 1.
Current direction figure when Fig. 5 is the negative half-cycle conducting of present embodiment 1 circuit, electric current flows through S6 successively, L2, civil power, L1, S3 is flowed into the negative terminal of solar cell at last by S4.
Fig. 6 is the current direction figure that the negative half-cycle of present embodiment 1 circuit closes intermittent current, and this moment, S4 and S6 turn-offed, and electric current passes through L2, civil power, and L1, S3 and diode D2 flow back to inductance L 2.
Fig. 7 is the switching sequence schematic diagram of each switching tube of present embodiment 1 circuit, is the switch drive oscillogram of six switching tubes above, below oscillogram be the current waveform figure of output.
Fig. 8 be present embodiment 1 circuit in the time of positive half period work, should S1 and (guarantee like this dividing potential drop half) separately of S5 conducting simultaneously, but under the understanding and considerate condition of the unexpected guide of S5, S1 still can satisfy the schematic diagram of the voltage stress that has only half DC input voitage.
Fig. 9 be present embodiment 1 circuit in the time of negative half-cycle work, should S4 and (guarantee like this dividing potential drop half) separately of S6 conducting simultaneously, but under the understanding and considerate condition of the unexpected guide of S6, S4 still can satisfy the schematic diagram of the voltage stress that has only half DC input voitage.
Embodiment 2:
Four HF switch pipe S1, S4, S5, S6 and low frequency switching tube S2, S3 adopt power field effect transistor (MOSFET) respectively, its circuit theory as shown in figure 10, wherein the drain electrode of the drain electrode of switching tube S1 and switching tube S6 is connected and is connected with the positive pole of solar cell input simultaneously, the source electrode of the source electrode of switching tube S4 and switching tube S5 is connected and is connected with the negative pole of solar cell input simultaneously, and the source electrode of switching tube S6 is connected with the drain electrode of switching tube S5.The drain electrode of switching tube S2 is connected with the source electrode of switching tube S1, the source electrode of switching tube S3 is connected with the drain electrode of switching tube S4, the source electrode of switching tube S2 is connected with the drain electrode of switching tube S3, the negative electrode of diode D1 is connected with the drain electrode link of switching tube S2 with the source electrode of switching tube S1, the anode of diode D2 is connected with the drain electrode link of switching tube S4 with the source electrode of switching tube S3, and the anode of diode D1 is connected with the negative electrode of diode D2.Capacitor C 1 is identical with capacitor C 2 capacitances, capacitor C 1 and C2 are connected in series and are connected simultaneously between the positive pole and negative pole of solar cell, capacitor C 1 both end voltage equates with capacitor C 2 both end voltage, be half of solar cell input voltage, the negative electrode of diode D3 is connected with the drain electrode of switching tube S2 and the cathode connection terminal of diode D1 with the source electrode of switching tube S1, the anode of diode D4 is connected with the drain electrode of switching tube S4 and the anode link of diode D2 with the source electrode of switching tube S 3, and the anode of diode D3 is connected with the negative electrode of diode D4 and is connected with capacitor C 2 links with capacitor C 1 simultaneously.Inductance L 1 is not connected with the drain electrode link of switching tube S3 with the source electrode of switching tube S2 with the live wire link of civil power, and inductance L 2 is not connected with the cathode connection terminal of diode D2 with the anode of diode D1 with the zero line link of civil power.
Switching tube adopts the circuit of igbt (IGBT) equivalence to replace among present embodiment 2 circuit and the embodiment 1, and its action principle and good effect are the same with embodiment 1, do not repeat them here.
The voltage stress of switching tube S1, S4 and diode D3, D4 is half of solar cell input voltage among the foregoing description 1, the embodiment 2, in addition, the voltage stress of other switching tube S2, S3, S5, S6 and diode D1, D2 all requires the peak into the solar cell input voltage, as the solar cell input voltage range is 200V-500V, and the voltage stress of then described each switching tube S2, S3, S5, S6 and diode D1, D2 should be selected 500V's.And the parameter value of capacitor C 1, C2 and inductance L 1, L2 should meet the industry design standard, and is known for those of ordinary skills, is not specifically noted here.
Claims (3)
1. transless grid-connected inverter circuit, it is characterized in that: the output module that described circuit comprises the high frequency modulation module that is connected with direct-current input power supplying, be electrically connected with the city, the low frequency afterflow module that is connected with output module with high frequency modulation module respectively and the clamper functional module that is connected with low frequency afterflow module with high frequency modulation module, wherein:
Described high frequency modulation module has four HF switch pipes (S1), (S4), (S5), (S6), described low frequency afterflow module has two low frequency switching tubes (S2), (S3) and two fast recovery diodes (D1), (D2), described clamper functional module has two electric capacity (C1), (C2) and two clamp diodes (D3), (D4) that capacitance is identical, described output module has two inductance (L1), (L2) that inductance value is identical, and these two inductance (L1), (L2) are connected to the zero line side and the live wire end of civil power.
2. transless grid-connected inverter circuit according to claim 1, it is characterized in that: as described four HF switch pipes (S1), (S4), (S5), (S6) and two low frequency switching tubes (S2), (S3) when adopting igbt respectively, wherein:
The collector electrode of the collector electrode of the first HF switch pipe switching tube (S1) and the 4th HF switch pipe switching tube (S6) is connected and is connected with the positive pole of direct-current input power supplying simultaneously, the emitter of the emitter of the second HF switch pipe switching tube (S4) and the 3rd HF switch pipe switching tube (S5) is connected and is connected with the negative pole of direct-current input power supplying simultaneously, and the emitter of the 4th HF switch pipe switching tube (S6) is connected with the collector electrode of the 3rd HF switch pipe switching tube (S5);
The collector electrode of the first low frequency switching tube (S2) is connected with the emitter of the first HF switch pipe (S1), the emitter of the second low frequency switching tube (S3) is connected with the collector electrode of the second HF switch pipe (S4), the emitter of the first low frequency switching tube (S2) is connected with the collector electrode of the second low frequency switching tube (S3), the negative electrode of first fast recovery diode (D1) is connected with the collector electrode link of the first low frequency switching tube (S2) with the emitter of the first HF switch pipe (S1), the anode of second fast recovery diode (D2) is connected with the collector electrode link of the second HF switch pipe (S4) with the emitter of the second low frequency switching tube (S3), and the anode of first fast recovery diode (D1) is connected with the negative electrode of second fast recovery diode (D2);
First electric capacity (C1) and second electric capacity (C2) are connected in series and are connected simultaneously between the positive pole and negative pole of direct-current input power supplying, and first electric capacity (C1) both end voltage equates with second electric capacity (C2) both end voltage, is respectively half of DC input voitage; The negative electrode of first clamp diode (D3) is connected with the collector electrode of the first low frequency switching tube (S2) and the cathode connection terminal of first fast recovery diode (D1) with the emitter of the first HF switch pipe (S1), the anode of second clamp diode (D4) is connected with the anode link of diode (D2) with the collector electrode and second of the second HF switch pipe (S4) fast with the emitter of the second low frequency switching tube (S3), and the anode of first clamp diode (D3) is connected with the negative electrode of second clamp diode (D4) and is connected with second electric capacity (C2) link with first electric capacity (C1) simultaneously;
An inductance (L1) that is connected in two inductance of the zero line side of civil power and live wire end is not connected with the collector electrode link of the second low frequency switching tube (S3) with the emitter of the first low frequency switching tube (S2) with city's electric connecting terminal, and another inductance (L2) is not connected with the cathode connection terminal of second fast recovery diode (D2) with the anode of first fast recovery diode (D1) with the electrical network link.
3. transless grid-connected inverter circuit according to claim 1, it is characterized in that: as described four HF switch pipes (S1), (S4), (S5), (S6) and two low frequency switching tubes (S2), (S3) when adopting power field effect transistor respectively, wherein:
The drain electrode of the drain electrode of the first HF switch pipe (S1) and the 4th HF switch pipe (S6) is connected and is connected with the positive pole of direct-current input power supplying simultaneously, the source electrode of the source electrode of the second HF switch pipe (S4) and the 3rd HF switch pipe (S5) is connected and is connected with the negative pole of direct-current input power supplying simultaneously, and the source electrode of the 4th HF switch pipe (S6) is connected with the drain electrode of the 3rd HF switch pipe (S 5);
The drain electrode of the first low frequency switching tube (S2) is connected with the source electrode of the first HF switch pipe (S1), the source electrode of the second low frequency switching tube (S3) is connected with the drain electrode of the second HF switch pipe (S4), the source electrode of the first low frequency switching tube (S2) is connected with the drain electrode of the second low frequency switching tube (S3), the negative electrode of first fast recovery diode (D1) is connected with the drain electrode link of the first low frequency switching tube (S2) with the source electrode of the first HF switch pipe (S1), and the anode of fast recovery diode (D2) is connected with the drain electrode link of the second HF switch pipe (S4) with the source electrode of the second low frequency switching tube (S3), the anode of first fast recovery diode (D1) is connected with the negative electrode of second fast recovery diode (D2);
First electric capacity (C1) and second electric capacity (C2) are connected in series and are connected simultaneously between the positive pole and negative pole of direct-current input power supplying, and first electric capacity (C1) both end voltage equates with second electric capacity (C2) both end voltage, is respectively half of DC input voitage; The negative electrode of first clamp diode (D3) is connected with the drain electrode of the first low frequency switching tube (S2) and the cathode connection terminal of first fast recovery diode (D1) with the source electrode of the first HF switch pipe (S1), the anode of second clamp diode (D4) is connected with the drain electrode of the second HF switch pipe (S4) and the anode link of second fast recovery diode (D2) with the source electrode of the second low frequency switching tube (S3), and the anode of first clamp diode (D3) is connected with the negative electrode of second clamp diode (D4) and is connected with second electric capacity (C2) link with first electric capacity (C1) simultaneously;
An inductance (L1) that is connected in two inductance of the zero line side of civil power and live wire end is not connected with the drain electrode link of the second low frequency switching tube (S3) with the source electrode of the first low frequency switching tube (S2) with city's electric connecting terminal, and another inductance (L2) is not connected with the cathode connection terminal of second fast recovery diode (D2) with the anode of first fast recovery diode (D1) with the electrical network link.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103051233A (en) * | 2012-12-12 | 2013-04-17 | 东南大学 | Non-isolated single-phase photovoltaic grid-connected inverter and on-off control timing sequence thereof |
| CN103312203A (en) * | 2012-03-12 | 2013-09-18 | 丰郅(上海)新能源科技有限公司 | High-efficiency inverter topology |
| CN103312211A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Control method of single phase grid-connected inverter |
| CN103312205A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Non-transformer single-phase grid-connected inverter control method |
| CN104578880A (en) * | 2015-01-16 | 2015-04-29 | 深圳市保益新能电气有限公司 | DC-AC conversion circuit and control method thereof |
| TWI485968B (en) * | 2014-01-29 | 2015-05-21 | Delta Electronics Inc | Power conversion system and method of operating the same |
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| CN103312211A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Control method of single phase grid-connected inverter |
| CN103312205A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Non-transformer single-phase grid-connected inverter control method |
| TWI485968B (en) * | 2014-01-29 | 2015-05-21 | Delta Electronics Inc | Power conversion system and method of operating the same |
| CN104578880A (en) * | 2015-01-16 | 2015-04-29 | 深圳市保益新能电气有限公司 | DC-AC conversion circuit and control method thereof |
| CN104578880B (en) * | 2015-01-16 | 2017-02-22 | 深圳市保益新能电气有限公司 | DC-AC conversion circuit and control method thereof |
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