CN102231606A - Transformerless gird-connected inverter circuit - Google Patents
Transformerless gird-connected inverter circuit Download PDFInfo
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- CN102231606A CN102231606A CN2011101648802A CN201110164880A CN102231606A CN 102231606 A CN102231606 A CN 102231606A CN 2011101648802 A CN2011101648802 A CN 2011101648802A CN 201110164880 A CN201110164880 A CN 201110164880A CN 102231606 A CN102231606 A CN 102231606A
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Abstract
The invention relates to a transformerless grid-connected inverter circuit. The circuit comprises a high-frequency modulation module, an output module and a low-frequency follow current module, wherein the high-frequency modulation module is connected with a direct-current input power supply; the output module is connected with a mains supply; the low-frequency follow current module is respectively connected with the high-frequency modulation module and the output module; the high-frequency modulation module is provided with four high-frequency switching tubes, the low-frequency follow current module is provided with two low-frequency switching tubes and two diodes, the output module is composed of two inductors with the same inductance value, and the two inductors are respectively connected with a zero line end and a live wire end of the mains supply. The invention provides an inversion topology by which the ground voltages of the positive terminal and the negative terminal of the direct-current input power supply present low-frequency fluctuation, thus common mode current can be greatly reduced and the working efficiency can be improved. Compared with a common bipolar modulation single-phase full-bridge inverter circuit, the inverter circuit provided by the invention has higher efficiency; compared with a common unipolar modulation single-phase full-bridge inverter circuit, the inverter circuit provided by the invention has better electromagnetic compatibility.
Description
Technical field
The present invention relates to a kind of transformerless grid-connected inverter circuit.
Background technology
In the photovoltaic parallel in system, owing to have parasitic capacitance between photovoltaic panel and the ground, having common mode current in the process of parallel network power generation produces, electromagnetic radiation and potential safety hazard have been increased, produce in order to manage to suppress this common mode current, mainly contain two kinds of solution routes: one, adopt the isolated form photovoltaic combining inverter of power frequency or high frequency transformer, can make civil power and solar panel system that electrical isolation is arranged like this, can avoid the leakage current of cell panel to producing between the earth.Two, adopt the non-isolated grid-connected topology that can effectively suppress the common mode current size.
But adopt the inverter circuit of transformer isolation to have following shortcoming: if adopt Industrial Frequency Transformer, volume is big, Heavy Weight and price are expensive.If adopt high frequency transformer, what power conversion circuit will be divided into.The control more complicated, efficient is lower.
And there is the defective of several aspects in general non-isolation inversion topological:
One. traditional single-phase full-bridge inverter, if adopt the bipolarity modulation, though electromagnetic interference is little, the conversion efficiency of inverter is low,
Two. traditional single-phase full-bridge inverter, if adopt the unipolarity modulation, then electromagnetic interference is serious, common mode current is bigger.
Summary of the invention
At suppressing the deficiency that common mode current produces the technical scheme existence of being adopted in the above-mentioned parallel network power generation process, the invention provides a kind of transformerless grid-connected inverter circuit, this circuit has not only greatly reduced common mode current, and has effectively improved operating efficiency.
Realize that technical scheme of the present invention is:
Output module that a kind of transformerless grid-connected inverter circuit, described circuit comprise the high frequency modulation module that is connected with direct-current input power supplying, be electrically connected with the city and the low frequency afterflow module that is connected with output module with high frequency modulation module respectively, wherein:
Described high frequency modulation module has four HF switch pipes, described low frequency afterflow module has two low frequency switching tubes and two diodes, described output module is made of two identical inductance of inductance value, and these two inductance are connected to the zero line and the live wire end of civil power.
Described two diodes are fast recovery diodes, the afterflow when these two diodes participate in the shutoff of HF switch pipe with described two low frequency switching tubes cooperation.
When described four HF switch pipes and two low frequency switching tubes adopt igbt (IGBT) respectively, wherein:
The collector electrode of the collector electrode of the first HF switch pipe and the 4th HF switch pipe is connected respectively to the positive pole of direct-current input power supplying, the emitter of the emitter of the second HF switch pipe and the 3rd HF switch pipe is connected respectively to the negative pole of direct-current input power supplying, and the emitter of the 4th HF switch pipe is connected with the collector electrode of the 3rd HF switch pipe;
When being connected with the negative electrode of first diode, the collector electrode of the first low frequency switching tube is connected with the emitter of the first HF switch pipe, when being connected with the anode of second diode, the emitter of the second low frequency switching tube is connected with the collector electrode of the second HF switch pipe, the emitter of the first low frequency switching tube is connected to the collector electrode of the second low frequency switching tube, and the negative electrode of second diode is connected to the anode of first diode;
Be connected to a inductance in two inductance of the zero line of civil power and the live wire end end that is not connected, another inductance end that is not connected with negative electrode that an end of city's electrical connection is connected to the anode of first diode and second diode with collector electrode that a end that the city is electrically connected is connected to the emitter of the first low frequency switching tube and the second low frequency switching tube.
When described four HF switch pipes and two low frequency switching tubes adopt power field effect transistor (MOSFET) respectively, wherein:
The drain electrode of the drain electrode of the first HF switch pipe and the 4th HF switch pipe is connected respectively to the positive pole of direct-current input power supplying, the source electrode of the source electrode of the second HF switch pipe and the 3rd HF switch pipe is connected respectively to the negative pole of direct-current input power supplying, and the source electrode of the 4th HF switch pipe is connected with the drain electrode of the 3rd HF switch pipe;
When being connected with the negative electrode of first diode, the drain electrode of the first low frequency switching tube is connected with the source electrode of the first HF switch pipe, when being connected with the anode of second diode, the source electrode of the second low frequency switching tube is connected with the drain electrode of the second HF switch pipe, the source electrode of the first low frequency switching tube is connected to the drain electrode of the second low frequency switching tube, and the negative electrode of second diode is connected to the anode of first diode;
Be connected to a inductance in two inductance of the zero line of civil power and the live wire end end that is not connected, another inductance end that is not connected with negative electrode that an end of city's electrical connection is connected to the anode of first diode and second diode with drain electrode that a end that the city is electrically connected is connected to the source electrode of the first low frequency switching tube and the second low frequency switching tube.
The voltage stress of related HF switch pipe, low frequency switching tube and diode requires to be the peak of input direct voltage in the invention described above technical scheme.As the DC input voitage scope is 200V-500V, and then related each HF switch pipe, low frequency switching tube and diode should be selected 500V's.
High frequency modulation module in the invention described above circuit is mainly finished the SPWM modulation, and low frequency afterflow module is mainly finished the switching of civil power positive-negative half-cycle, the task of inductive current afterflow.And described low frequency afterflow module must comprise and is connected between the high frequency modulation module, that is to say from the flow process of DC power supply intake and be: high frequency modulation module → low frequency afterflow module → output module → high frequency modulation module perhaps is high frequency modulation module → output module → low frequency afterflow module → high frequency modulation module.
The present invention proposes a kind of inversion topological, can make the anode of direct-current input power supplying and negative terminal voltage voltage to earth present low-frequency fluctuation, reduce common mode current greatly, and increase work efficiency.The present invention finishes and improves electromagnetic interference by improving common full-bridge and its corresponding modulation system, reaches the purpose of raising the efficiency.In the high frequency modulation module conducting, according to equivalent principle of stacking, the direct-current input power supplying output negative terminal voltage of (GND) over the ground adds half low frequency line voltage for half DC power supply input voltage, consider that direct voltage is constant, so the negative terminal of direct-current input power supplying fluctuation voltage over the ground is half low frequency line voltage.And when high frequency modulation module is closed, electric current afterflow between low frequency afterflow module and output module, civil power, and the low-frequency tube current potential is clamped to half DC power supply input voltage at this moment, so DC input voitage negative terminal equivalent voltage over the ground also has only half DC power supply input voltage to add half low frequency line voltage, the effective like this fluctuation amplitude that has reduced common-mode voltage, thereby also reduced the size of common mode current, the full-bridge bipolarity is modulated relatively.Then inductance has less current ripples, has reduced switching loss simultaneously, has improved efficient.Its core concept is: in the time of the normal delivery energy, adopt the Unipolar SPWM modulation, and in the time of afterflow, then disconnect dc terminal and exchange being connected of end, eliminate electromagnetic interference.
Common relatively bipolarity modulation single-phase full bridge inverter circuit, this circuit efficiency height.And for common unipolarity modulation single-phase full bridge inverter circuit, this Electric Circuit Electromagnetic Compatibility is good.
Description of drawings
Fig. 1 is a schematic block circuit diagram of the present invention;
Fig. 2 is the embodiment of the invention 1 circuit theory diagrams;
Current direction schematic diagram when Fig. 3 is the positive half cycle conducting of the embodiment of the invention 1 circuit;
Electric current afterflow schematic diagram when Fig. 4 is the shutoff of the embodiment of the invention 1 circuit positive half period;
Fig. 5 is the embodiment of the invention current direction figure of 1 circuit negative half period conduction period;
Afterflow schematic diagram when Fig. 6 is the shutoff of the embodiment of the invention 1 circuit negative half period;
Fig. 7 is the embodiment of the invention 1 a circuit waveform sequential schematic diagram;
Fig. 8 is the embodiment of the invention 2 circuit theory diagrams.
Embodiment
The technical staff of the technical field of the invention embodiments of the invention is described with reference to the accompanying drawings, so that can implement the present invention easily.
The embodiments of the invention circuit comprises the high frequency modulation module that direct-current input power supplying connects, output module that is electrically connected with the city and the low frequency afterflow module that is connected with output module with high frequency modulation module respectively, direct-current input power supplying is a solar cell input power supply among the following embodiment, Fig. 1 shows the theory diagram of this circuit, high frequency modulation module is the first HF switch pipe S1 by four HF switch pipes, the second HF switch pipe S4, the 3rd HF switch pipe S5 and the 4th HF switch pipe S6 constitute, low frequency afterflow module is the first low frequency switching tube S2 by two low frequency switching tubes, the second low frequency switching tube S3 and two diodes are the first diode D1, the second diode D2 constitutes, output module is by two inductance L 1 that inductance value is identical, L2 constitutes, and these two inductance L 1, L2 is connected to the live wire and the zero line side of civil power.
The low frequency switching tube S2, the S3 that constitute HF switch pipe S1, S4, S5, S6 and the formation low frequency modulations module of high frequency modulation module among the present invention all can adopt igbt (IGBT) or power field effect transistor (MOSFET), and diode D1 and D2 should be fast recovery diodes, and the voltage stress of related HF switch pipe, low frequency switching tube and diode requires to be the peak of solar cell input voltage in the present embodiment technical scheme.
Below adopt igbt (IGBT) or power field effect transistor (MOSFET) to be example explanation the present invention with regard to each switching tube S1, S2, S3, S4, S5, S6 respectively.
Embodiment 1:
Four HF switch pipe S1, S4, S5, S6 and four low frequency switching tube S2, S3 adopt igbt (IGBT) respectively, its circuit theory as shown in Figure 2, wherein the collector electrode of the collector electrode of switching tube S1 and switching tube S6 is connected respectively to the positive pole of solar cell input power supply, the emitter of the emitter of switching tube S4 and switching tube S5 is connected respectively to the negative pole of solar cell input power supply, and the emitter of switching tube S6 is connected with the collector electrode of switching tube S5; The low frequency afterflow module that is made of low frequency switching tube S2, S3 and diode D1, D2 comprises and is connected between the high frequency modulation module, be connected with the emitter of switching tube S1 when promptly wherein the negative electrode of the collector electrode of switching tube S2 and diode D1 is connected, when being connected, the anode of the emitter of switching tube S3 and diode D2 is connected with the collector electrode of switching tube S4, the emitter of switching tube S2 is connected to the collector electrode of switching tube S3, and the negative electrode of diode D2 is connected to the anode of diode D1; The inductance value of two inductance L 1, L2 that constitutes output module is identical, and the parameter value of inductance L 1, L2 should meet the industry design standard, and is known for those of ordinary skills, is not specifically noted here.Wherein inductance L 1 is connected the live wire end of civil power, inductance L 1 end that is not connected with collector electrode that a end that the city is electrically connected is connected to the emitter of switching tube S2 and switching tube S3, another inductance L 2 is connected the zero line side of civil power, inductance L 2 end that is not connected with negative electrode that a end that the city is electrically connected is connected to the anode of diode D1 and diode D2.High frequency modulation module is mainly finished the SPWM modulation, and low frequency afterflow module is mainly finished the task that the civil power positive-negative half-cycle is switched, electric current commutates.Its operation principle is in the time of the positive half period conducting, the solar cell input negative terminal voltage of (GND) over the ground is that 1/2 solar cell input voltage adds 1/2 line voltage according to the principle of equal effects, and when closing intermittent current, suppose to be in this moment positive half period, because switching tube S1 and switching tube S5 turn-off, blocked being electrically connected between solar cell input current and the civil power, switching tube S5 and switching tube S6 divide the solar cell input supply voltage equally, add 1/2 line voltage so solar cell input negative terminal this moment voltage over the ground still remains 1/2 solar cell input voltage.Because the fluctuation of solar array voltage is less, exist again, make that the leakage current on the parasitic capacitance is very little so such solar cell input supply voltage voltage fluctuation over the ground only has half city's electro-mechanical wave of low frequency.
Current direction figure when Fig. 3 is the positive half cycle conducting of present embodiment 1 circuit, electric current flows through S1 successively, S2, L1, civil power, L2 is flowed into the negative terminal of solar cell at last by S5.Among Fig. 3, civil power zero line (N line) is half line voltage of a false add of solar energy input voltage to the solar cell negative terminal voltage, principle is according to equivalent theorem, a direct voltage source and an alternating-current voltage source, when calculating direct voltage, equivalent city electrical short, so L1, L2 half direct voltage of each minute, when calculating alternating voltage, same Equivalent DC voltage short circuit.L1, L2 half alternating voltage of each minute adds 1/2 line voltage so ground presents 1/2 solar cell input voltage to the solar cell negative terminal.
Fig. 4 is the current direction figure of the positive half period of present embodiment 1 circuit afterflow when turn-offing, and this moment, S1 and S5 turn-offed, and electric current is by L1, civil power, and L2, diode D1 and S2 flow back to inductance L 1.
Current direction figure when Fig. 5 is the negative half-cycle conducting of present embodiment circuit, electric current flows through S6 successively, L2, civil power, L1, S3 is flowed into the negative terminal of solar cell input at last by S4.
Fig. 6 is the current direction figure of the negative half-cycle of present embodiment 1 circuit afterflow when turn-offing, and this moment, S4 and S6 turn-offed, and electric current is by L2, civil power, and L1, S3 and diode D2 flow back to inductance L 2.
Fig. 7 is the switching sequence schematic diagram of each switching tube of present embodiment 1 circuit, is the switch drive oscillogram of six switching tubes above, below oscillogram be the current waveform figure of output.
Embodiment 2:
Four HF switch pipe S1, S4, S5, S6 and low frequency switching tube S2, S3 adopt power field effect transistor (MOSFET) respectively, its circuit theory as shown in Figure 8, wherein the drain electrode of the drain electrode of switching tube S1 and switching tube S6 is connected respectively to the positive pole of solar cell input power supply, the source electrode of the source electrode of switching tube S4 and switching tube S5 is connected respectively to the negative pole of solar cell input power supply, and the source electrode of switching tube S6 is connected with the drain electrode of switching tube S5.
When being connected with the negative electrode of diode D1, the drain electrode of switching tube S2 is connected with the source electrode of switching tube S1, when being connected with the anode of diode D2, the source electrode of switching tube S3 is connected with the drain electrode of switching tube S4, the source electrode of switching tube S2 is connected to the drain electrode of switching tube S3, and the negative electrode of diode D2 is connected to the anode of diode D1;
The inductance value of two inductance L 1, L2 that constitutes output module is identical, wherein inductance L 1 is connected the live wire end of civil power, inductance L 1 end that is not connected with drain electrode that a end that the city is electrically connected is connected to the source electrode of switching tube S2 and switching tube S3, another inductance L 2 is connected the zero line side of civil power, inductance L 2 end that is not connected with negative electrode that a end that the city is electrically connected is connected to the anode of diode D1 and diode D2.Same, the parameter value of inductance L 1, L2 should meet the industry design standard, and is known for those of ordinary skills, also is not specifically noted here.
Switching tube adopts the circuit of igbt (IGBT) equivalence to replace in present embodiment 2 circuit and the foregoing description 1, and its action principle and good effect are the same with embodiment 1, do not repeat them here.
Claims (4)
1. transformerless grid-connected inverter circuit, it is characterized in that: output module that described circuit comprises the high frequency modulation module that is connected with direct-current input power supplying, be electrically connected with the city and the low frequency afterflow module that is connected with output module with high frequency modulation module respectively, wherein:
Described high frequency modulation module has four HF switch pipes (S1), (S4), (S5), (S6), described low frequency afterflow module has two low frequency switching tubes (S2), (S3) and two diodes (D1), (D2), described output module is made of two identical inductance of inductance value, and these two inductance are connected to the zero line and the live wire end of civil power.
2. transformerless grid-connected inverter circuit according to claim 1 is characterized in that: described two diodes are fast recovery diodes.
3. transformerless grid-connected inverter circuit according to claim 1, it is characterized in that: as described four HF switch pipes (S1), (S4), (S5), (S6) and two low frequency switching tubes (S2), (S3) when adopting igbt respectively, wherein:
The collector electrode of the collector electrode of the first HF switch pipe (S1) and the 4th HF switch pipe (S6) is connected respectively to the positive pole of direct-current input power supplying, the emitter of the emitter of the second HF switch pipe (S4) and the 3rd HF switch pipe (S5) is connected respectively to the negative pole of direct-current input power supplying, and the emitter of the 4th HF switch pipe (S6) is connected with the collector electrode of the 3rd HF switch pipe (S5);
When being connected with the negative electrode of first diode (D1), the collector electrode of the first low frequency switching tube (S2) is connected with the emitter of the first HF switch pipe (S1), when being connected with the anode of second diode (D2), the emitter of the second low frequency switching tube (S3) is connected with the collector electrode of the second HF switch pipe (S4), the emitter of the first low frequency switching tube (S2) is connected to the collector electrode of the second low frequency switching tube (S3), and the negative electrode of second diode (D2) is connected to the anode of first diode (D1);
Be connected to a inductance (L1) in two inductance of the zero line of civil power and the live wire end end that is not connected, another inductance (L2) end that is not connected with negative electrode that an end of city's electrical connection is connected to the anode of first diode (D1) and second diode (D2) with collector electrode that a end that the city is electrically connected is connected to the emitter of the first low frequency switching tube (S2) and the second low frequency switching tube (S3).
4. transformerless grid-connected inverter circuit according to claim 1, it is characterized in that: as described four HF switch pipes (S1), (S4), (S5), (S6) and two low frequency switching tubes (S2), (S3) when adopting power field effect transistor respectively, wherein:
The drain electrode of the drain electrode of the first HF switch pipe (S1) and the 4th HF switch pipe (S6) is connected respectively to the positive pole of direct-current input power supplying, the source electrode of the source electrode of the second HF switch pipe (S4) and the 3rd HF switch pipe (S5) is connected respectively to the negative pole of direct-current input power supplying, and the source electrode of the 4th HF switch pipe (S6) is connected with the drain electrode of the 3rd HF switch pipe (S5);
When being connected with the negative electrode of first diode (D1), the drain electrode of the first low frequency switching tube (S2) is connected with the source electrode of the first HF switch pipe (S1), when being connected with the anode of second diode (D2), the source electrode of the second low frequency switching tube (S3) is connected with the drain electrode of the second HF switch pipe (S4), the source electrode of the first low frequency switching tube (S2) is connected to the drain electrode of the second low frequency switching tube (S3), and the negative electrode of second diode (D2) is connected to the anode of first diode (D1);
Be connected to a inductance (L1) in two inductance of the zero line of civil power and the live wire end end that is not connected, another inductance (L2) end that is not connected with negative electrode that an end of city's electrical connection is connected to the anode of first diode (D1) and second diode (D2) with drain electrode that a end that the city is electrically connected is connected to the source electrode of the first low frequency switching tube (S2) and the second low frequency switching tube (S3).
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| CN2011101648802A CN102231606A (en) | 2011-06-18 | 2011-06-18 | Transformerless gird-connected inverter circuit |
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| CN2011101648802A CN102231606A (en) | 2011-06-18 | 2011-06-18 | Transformerless gird-connected inverter circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102427303A (en) * | 2011-12-29 | 2012-04-25 | 阳光电源股份有限公司 | Single-phase inverter |
| CN103312211A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Control method of single phase grid-connected inverter |
| CN103312205A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Non-transformer single-phase grid-connected inverter control method |
| CN103795085A (en) * | 2014-03-03 | 2014-05-14 | 苏州大学 | Photovoltaic grid-connected inverter |
| CN104022673A (en) * | 2014-06-26 | 2014-09-03 | 浙江昱能科技有限公司 | SPWM method of single-phase full bridge inverter |
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| CN101599713A (en) * | 2009-07-07 | 2009-12-09 | 华中科技大学 | A kind of three-level inverter of single-phase mixed bridge |
| CN101667789A (en) * | 2009-04-14 | 2010-03-10 | 赵磊 | Inverter circuit used for solar energy photovoltaic grid connection and device thereof |
| CN202127371U (en) * | 2011-06-18 | 2012-01-25 | 江苏艾索新能源股份有限公司 | Transformerless grid-connected inverting circuit |
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2011
- 2011-06-18 CN CN2011101648802A patent/CN102231606A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101667789A (en) * | 2009-04-14 | 2010-03-10 | 赵磊 | Inverter circuit used for solar energy photovoltaic grid connection and device thereof |
| CN101599713A (en) * | 2009-07-07 | 2009-12-09 | 华中科技大学 | A kind of three-level inverter of single-phase mixed bridge |
| CN202127371U (en) * | 2011-06-18 | 2012-01-25 | 江苏艾索新能源股份有限公司 | Transformerless grid-connected inverting circuit |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427303A (en) * | 2011-12-29 | 2012-04-25 | 阳光电源股份有限公司 | Single-phase inverter |
| CN103312211A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Control method of single phase grid-connected inverter |
| CN103312205A (en) * | 2013-06-28 | 2013-09-18 | 石家庄通合电子科技股份有限公司 | Non-transformer single-phase grid-connected inverter control method |
| CN103795085A (en) * | 2014-03-03 | 2014-05-14 | 苏州大学 | Photovoltaic grid-connected inverter |
| CN104022673A (en) * | 2014-06-26 | 2014-09-03 | 浙江昱能科技有限公司 | SPWM method of single-phase full bridge inverter |
| CN104022673B (en) * | 2014-06-26 | 2016-10-19 | 浙江昱能科技有限公司 | The SPWM modulator approach of single-phase full-bridge inverter |
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Address after: 215011 Suzhou province high tech Zone Xiangyang Road, No. 9, building 198, Jiangsu Applicant after: Jiangsu Zeversolar New Energy Co., Ltd. Address before: 215011 Suzhou province high tech Zone Xiangyang Road, No. 9, building 198, Jiangsu Applicant before: Jiangsu Aisuo New Energy Co., Ltd. |
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