CN203491923U - Five-level voltage source converter - Google Patents
Five-level voltage source converter Download PDFInfo
- Publication number
- CN203491923U CN203491923U CN201320621036.2U CN201320621036U CN203491923U CN 203491923 U CN203491923 U CN 203491923U CN 201320621036 U CN201320621036 U CN 201320621036U CN 203491923 U CN203491923 U CN 203491923U
- Authority
- CN
- China
- Prior art keywords
- terminals
- insulated gate
- gate bipolar
- bipolar transistor
- transistor igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 43
- 230000000694 effects Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
Images
Landscapes
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
The utility model discloses a five-level voltage source converter, belonging to the field of electric and electronic converters. The converter comprises a capacitor C1, a capacitor C2, a capacitor Cph, a first wiring terminal (1), a second wiring terminal (2), a third wiring terminal (3), a fourth wiring terminal (4), and twelve insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11 and IGBT12. All the insulated gate bipolar transistors in the converter bear the same withstand voltage, and thus insulated gate bipolar transistors of the same model can be selected during usage. A small number of capacitors are used, and clamping diodes are not necessary. The converter is simple in structure and flexible for control.
Description
Technical field
The utility model relates to a kind of five-power level voltage source type converting means, belongs to Technics of Power Electronic Conversion dress device field.
Background technology
In recent years, along with the development in an all-round way of power electronic technology and control technology, power electronic equipment is widely used, and people are more and more higher to the requirement high-power, high pressure resistant, low harmonic disturbance of power electronic equipment.The advantage such as multilevel device has that power is large, switching frequency is low, output harmonic wave is little, rapid dynamic response speed, Electro Magnetic Compatibility are good, and can make power electronic device reliability application that withstand voltage is low in high-power field, and effectively reduce pulse-width modulation and be called for short PWM and control the high order harmonic component producing.But, because the number of diodes of known diode clamp type five LCU level conversion units is more, electric capacity flies to control complicated, H bridge cascade connection type five LCU level conversion units across type five LCU level conversion units needs independently five LCU level conversion units such as DC source all to have inherent defect, has suppressed popularization and the use in practice of five LCU level conversion units.
Five level translation transposition also must be considered the factor of all pressing in actual application, the igbt of different model is because its inner stray inductance is not identical with parasitic capacitance, thereby cause the voltage at igbt two ends of two different models being in series different, finally may cause the damage of igbt, so the use of cannot connecting of the igbt of different model; Meanwhile, when design and installation, because the igbt of different model dimensionally can be different, therefore in actual use, also cannot mix use.So five practical LCU level conversion units are not only feasible in theory, in actual use, also must there is the feature of practicality.
Utility model content
The problem existing for above-mentioned prior art, the utility model provides a kind of five-power level voltage source type converting means, simple in structure, control five-power level voltage source type converting means flexibly, the quantity of capacitor used is few, do not need clamping diode, what each igbt bore is withstand voltage identical.
To achieve these goals, this five-power level voltage source type converting means comprises capacitor C1, capacitor C2, capacitor Cph, the first terminals, the second terminals, the 3rd terminals, the 4th terminals, and 12 insulated gate bipolar transistor IGBTs 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12;
The first terminals are connected with the collector electrode of insulated gate bipolar transistor IGBT 1 with capacitor C1;
The emitter of the second terminals, capacitor C1, capacitor C2 and insulated gate bipolar transistor IGBT 3 is connected with the collector electrode of insulated gate bipolar transistor IGBT 5;
The 3rd terminals are connected with the emitter of insulated gate bipolar transistor IGBT 7 with capacitor C2;
The emitter of insulated gate bipolar transistor IGBT 1 is connected with the collector electrode of insulated gate bipolar transistor IGBT 2, the emitter of insulated gate bipolar transistor IGBT 3 is connected with the collector electrode of insulated gate bipolar transistor IGBT 4, the emitter of insulated gate bipolar transistor IGBT 5 is connected with the collector electrode of insulated gate bipolar transistor IGBT 6, the emitter of insulated gate bipolar transistor IGBT 7 is connected with the collector electrode of insulated gate bipolar transistor IGBT 8, the emitter of insulated gate bipolar transistor IGBT 2 is connected with the collector electrode of insulated gate bipolar transistor IGBT 4, the collector electrode of insulated gate bipolar transistor IGBT 9, the emitter of the emitter of insulated gate bipolar transistor IGBT 6 and insulated gate bipolar transistor IGBT 10 is connected with the collector electrode of insulated gate bipolar transistor IGBT 8,
The emitter of the collector electrode of the collector electrode of the emitter of insulated gate bipolar transistor IGBT 9 and insulated gate bipolar transistor IGBT 10 and insulated gate bipolar transistor IGBT 11 and insulated gate bipolar transistor IGBT 12 is connected to the two poles of the earth of capacitor Cph;
The collector electrode of the emitter of insulated gate bipolar transistor IGBT 11 and insulated gate bipolar transistor IGBT 12 is connected with the 4th terminals.
Each igbt also can be replaced and be used by integrated gate commutated thyristor, gate level turn-off thyristor, power transistor and field of electric force effect transistor.
The first terminals, the second terminals, the 3rd terminals are direct-flow input end, the output that the 4th terminals, the 5th terminals, the 6th terminals are three-phase alternating current, dc-link capacitance is all installed in each brachium pontis, and every phase dc-link capacitance is installed near this phase brachium pontis.
The first terminals, the second terminals, the 3rd terminals are direct-flow input end, the output that the 4th terminals, the 5th terminals, the 6th terminals are three-phase alternating current, all brachium pontis share a dc-link capacitance, and dc-link capacitance is arranged on the input of DC bus.
The input that the first terminals, the second terminals, the 3rd terminals are three-phase alternating current, is all provided with dc-link capacitance in each brachium pontis, every phase dc-link capacitance is installed near this phase brachium pontis.
The input that the first terminals, the second terminals, the 3rd terminals are three-phase alternating current, all brachium pontis share a dc-link capacitance, and dc-link capacitance is arranged on the input of DC bus.
The input that the first terminals, the second terminals, the 3rd terminals are three-phase alternating current, the output that the 4th terminals, the 5th terminals, the 6th terminals are three-phase alternating current, dc-link capacitance is all installed in each brachium pontis, and every phase dc-link capacitance is installed near this phase brachium pontis.
The input that the first terminals, the second terminals, the 3rd terminals are three-phase alternating current, the output that the 4th terminals, the 5th terminals, the 6th terminals are three-phase alternating current, all brachium pontis share a dc-link capacitance, and dc-link capacitance is arranged on the input of DC bus.
Compared with prior art, two capacitor C1 of this five-power level voltage source type converting means, the voltage at C2 two ends are DC bus-bar voltage 1/2, the voltage at capacitor Cph two ends is DC bus-bar voltage 1/4, the voltage that each igbt bears is 1/4 of DC bus-bar voltage, therefore, in the utility model, the quantity of capacitor used is few, does not need clamping diode, simple in structure, control flexibly; What all igbts bore is withstand voltage identical, can select same model igbt during use, and making can be very convenient in the type selecting of switching tube, only needs to select the switching tube of same model; The encapsulation of all switching tubes is identical in addition, can be more convenient in the design and installation of switching tube.
Accompanying drawing explanation
Fig. 1 is five-power level voltage source type converting means topology diagram of the present utility model;
Fig. 2 is according to the topology diagram of the utility model embodiment mono-;
Fig. 3 is according to the topology diagram of the utility model embodiment bis-;
Fig. 4 is according to the topology diagram of the utility model embodiment tri-;
Fig. 5 implements the topology diagram of four examples according to the utility model;
Fig. 6 is according to the topology diagram of the utility model embodiment five;
Fig. 7 is according to the topology diagram of the utility model embodiment six.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is made to specific description.
As shown in Figure 1, this five-power level voltage source type converting means comprises capacitor C1, capacitor C2, capacitor Cph, the first terminals 1, the second terminals 2, the 3rd terminals 3, the 4th terminals 4, and 12 insulated gate bipolar transistor IGBTs 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12;
The first terminals 1 are connected with the collector electrode of insulated gate bipolar transistor IGBT 1 with capacitor C1;
The emitter of the second terminals 2, capacitor C1, capacitor C2 and insulated gate bipolar transistor IGBT 3 is connected with the collector electrode of insulated gate bipolar transistor IGBT 5;
The 3rd terminals 3 are connected with the emitter of insulated gate bipolar transistor IGBT 7 with capacitor C2;
The emitter of insulated gate bipolar transistor IGBT 1 is connected with the collector electrode of insulated gate bipolar transistor IGBT 2, the emitter of insulated gate bipolar transistor IGBT 3 is connected with the collector electrode of insulated gate bipolar transistor IGBT 4, the emitter of insulated gate bipolar transistor IGBT 5 is connected with the collector electrode of insulated gate bipolar transistor IGBT 6, the emitter of insulated gate bipolar transistor IGBT 7 is connected with the collector electrode of insulated gate bipolar transistor IGBT 8, the emitter of insulated gate bipolar transistor IGBT 2 is connected with the collector electrode of insulated gate bipolar transistor IGBT 4, the collector electrode of insulated gate bipolar transistor IGBT 9, the emitter of the emitter of insulated gate bipolar transistor IGBT 6 and insulated gate bipolar transistor IGBT 10 is connected with the collector electrode of insulated gate bipolar transistor IGBT 8,
The emitter of the collector electrode of the collector electrode of the emitter of insulated gate bipolar transistor IGBT 9 and insulated gate bipolar transistor IGBT 10 and insulated gate bipolar transistor IGBT 11 and insulated gate bipolar transistor IGBT 12 is connected to the two poles of the earth of capacitor Cph;
The collector electrode of the emitter of insulated gate bipolar transistor IGBT 11 and insulated gate bipolar transistor IGBT 12 is connected with the 4th terminals 4.
By controlling the conducting of different insulative grid bipolar transistor IGBT 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12 and turn-offing the output that can realize five level voltages.
During concrete enforcement, each igbt can be that single igbt is integrated in a module, also can be that two switching tubes are wherein integrated in a module, concrete method is as follows, IGBT1, IGBT2 are integrated in a module, IGBT3, IGBT4 are integrated in a module, IGBT5, IGBT6 are integrated in a module, IGBT7, IGBT8 are integrated in a module, IGBT9, IGBT11 are integrated in a module, IGBT10, IGBT12 are integrated in a module, as a dotted line frame in Fig. 1 represents a module.
In the specific implementation, insulated gate bipolar transistor IGBT 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12, capacitor Cph, drive plate, control board are integrated in a larger module the utility model.
Each igbt also can be replaced and be used by other full-control type devices, and other full-control type devices comprise integrated gate commutated thyristor, gate level turn-off thyristor, power transistor, field of electric force effect transistor.
Voltage between the first terminals 1 and the 3rd terminals 3 is DC bus-bar voltage.
Five-power level voltage source type converting means of the present utility model is when stable operation, and the voltage at capacitor C1, C2 two ends need be controlled at 1/2 of DC bus-bar voltage, and the voltage at capacitor Cph two ends need be controlled at DC bus-bar voltage 1/4.When the voltage at capacitor C1, C2 two ends is DC bus-bar voltage 1/2, when the voltage at capacitor Cph two ends is DC bus-bar voltage 1/4, the voltage that each igbt bears is 1/4 of DC bus-bar voltage.Therefore, it is withstand voltage identical that all igbts in the utility model bear, and can select same model igbt during use.
Fig. 2 is embodiment mono-of the present utility model, the three-phase inverter topological structure circuit that embodiment mono-is comprised of converting means of the present utility model, the function of this embodiment change-over circuit is that direct current is converted to three-phase alternating current, the first terminals 1, the second terminals 2, the 3rd terminals 3 are direct-flow input end, the 4th terminals 4, the 5th terminals 5, the output that the 6th terminals 6 are three-phase alternating current, the feature of this embodiment is that dc-link capacitance is all installed in each brachium pontis, the dc-link capacitance of every phase is installed near this phase brachium pontis, be conducive to reduce dc-link capacitance to the stray inductance value of brachium pontis, more be conducive to the stable of system.
Fig. 3 is embodiment bis-of the present utility model, the three-phase inverter topological structure circuit that embodiment bis-is comprised of converting means of the present utility model, the function of this embodiment change-over circuit is that direct current is converted to three-phase alternating current, the first terminals 1, the second terminals 2, the 3rd terminals 3 are direct-flow input end, the 4th terminals 4, the 5th terminals 5, the output that the 6th terminals 6 are three-phase alternating current, the feature of this embodiment is that all brachium pontis share a dc-link capacitance, dc-link capacitance is arranged on the input of DC bus, be conducive to reduce the quantity of capacitor, the structure of system is simpler, the volume of device is less.
Fig. 4 is embodiment tri-of the present utility model, the three-phase rectifier topological structure circuit that embodiment tri-is comprised of converting means of the present utility model, the function of this embodiment change-over circuit is that three-phase alternating current is converted to direct current, the first terminals 1, the second terminals 2, the input that the 3rd terminals 3 are three-phase alternating current, the feature of this embodiment is that dc-link capacitance is all installed in each brachium pontis, the dc-link capacitance of every phase is installed near this phase brachium pontis, be conducive to reduce dc-link capacitance to the stray inductance value of brachium pontis, be conducive to the stable of system, the topological structure of this embodiment can be applied to rectifying device, in active filter and static passive compensation device.
Fig. 5 is embodiment tetra-of the present utility model, the three-phase rectifier topological structure circuit that embodiment tetra-is comprised of converting means of the present utility model, the function of this embodiment change-over circuit is that three-phase alternating current is converted to direct current, the first terminals 1, the second terminals 2, the input that the 3rd terminals 3 are three-phase alternating current, the feature of this embodiment is that all brachium pontis share a dc-link capacitance, dc-link capacitance is arranged on the input of DC bus, be conducive to reduce the quantity of capacitor, the structure of system is simpler, the volume of device is less, the topological structure of this embodiment can be applied to rectifying device, in active filter and static passive compensation device.
Fig. 6 is embodiment five of the present utility model, the three-phase that embodiment five is comprised of converting means of the present utility model is five level topological structure circuit back-to-back, the function of this embodiment change-over circuit is that three-phase alternating current is converted to three-phase alternating current, the first terminals 1, the second terminals 2, the input that the 3rd terminals 3 are three-phase alternating current, the 4th terminals 4, the 5th terminals 5, the output that the 6th terminals 6 are three-phase alternating current, the feature of this embodiment is that dc-link capacitance is all installed in each brachium pontis, the dc-link capacitance of every phase is installed near this phase brachium pontis, be conducive to reduce dc-link capacitance to the stray inductance value of brachium pontis, be conducive to the stable of system.
Fig. 7 is embodiment six of the present utility model, the three-phase that embodiment six is comprised of converting means of the present utility model is five level topological structure circuit back-to-back, the function of this embodiment change-over circuit is that three-phase alternating current is converted to three-phase alternating current, the first terminals 1, the second terminals 2, the input that the 3rd terminals 3 are three-phase alternating current, the 4th terminals 4, the 5th terminals 5, the output that the 6th terminals 6 are three-phase alternating current, the feature of this embodiment is that all brachium pontis share a dc-link capacitance, dc-link capacitance is arranged on the input of DC bus, be conducive to reduce the quantity of capacitor, the structure of system is simpler, make the volume of device less.
Two capacitor C1 of this five-power level voltage source type converting means, the voltage at C2 two ends are DC bus-bar voltage 1/2, the voltage at capacitor Cph two ends is DC bus-bar voltage 1/4, the voltage that each igbt bears is 1/4 of DC bus-bar voltage, therefore, it is withstand voltage identical that all igbts in the utility model bear, during use, can select same model igbt, the quantity of capacitor used is few, do not need clamping diode, simple in structure, control flexibly.
Claims (8)
1. a five-power level voltage source type converting means, comprise capacitor C1, capacitor C2, capacitor Cph, the first terminals (1), the second terminals (2), the 3rd terminals (3), the 4th terminals (4), and 12 insulated gate bipolar transistor IGBTs 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12;
It is characterized in that, the first terminals (1) are connected with the collector electrode of insulated gate bipolar transistor IGBT 1 with capacitor C1;
The emitter of the second terminals (2), capacitor C1, capacitor C2 and insulated gate bipolar transistor IGBT 3 is connected with the collector electrode of insulated gate bipolar transistor IGBT 5;
The 3rd terminals (3) are connected with the emitter of insulated gate bipolar transistor IGBT 7 with capacitor C2;
The emitter of insulated gate bipolar transistor IGBT 1 is connected with the collector electrode of insulated gate bipolar transistor IGBT 2, the emitter of insulated gate bipolar transistor IGBT 3 is connected with the collector electrode of insulated gate bipolar transistor IGBT 4, the emitter of insulated gate bipolar transistor IGBT 5 is connected with the collector electrode of insulated gate bipolar transistor IGBT 6, the emitter of insulated gate bipolar transistor IGBT 7 is connected with the collector electrode of insulated gate bipolar transistor IGBT 8, the emitter of insulated gate bipolar transistor IGBT 2 is connected with the collector electrode of insulated gate bipolar transistor IGBT 4, the collector electrode of insulated gate bipolar transistor IGBT 9, the emitter of the emitter of insulated gate bipolar transistor IGBT 6 and insulated gate bipolar transistor IGBT 10 is connected with the collector electrode of insulated gate bipolar transistor IGBT 8,
The emitter of the collector electrode of the collector electrode of the emitter of insulated gate bipolar transistor IGBT 9 and insulated gate bipolar transistor IGBT 10 and insulated gate bipolar transistor IGBT 11 and insulated gate bipolar transistor IGBT 12 is connected to the two poles of the earth of capacitor Cph;
The collector electrode of the emitter of insulated gate bipolar transistor IGBT 11 and insulated gate bipolar transistor IGBT 12 is connected with the 4th terminals (4).
2. a kind of five-power level voltage source type converting means according to claim 1, it is characterized in that, each igbt also can be replaced and be used by integrated gate commutated thyristor, gate level turn-off thyristor, power transistor and field of electric force effect transistor.
3. a kind of five-power level voltage source type converting means according to claim 1 and 2, it is characterized in that, the first terminals (1), the second terminals (2), the 3rd terminals (3) are direct-flow input end, the output that the 4th terminals (4), the 5th terminals (5), the 6th terminals (6) are three-phase alternating current, dc-link capacitance is all installed in each brachium pontis, and every phase dc-link capacitance is installed near this phase brachium pontis.
4. a kind of five-power level voltage source type converting means according to claim 1 and 2, it is characterized in that, the first terminals (1), the second terminals (2), the 3rd terminals (3) are direct-flow input end, the output that the 4th terminals (4), the 5th terminals (5), the 6th terminals (6) are three-phase alternating current, all brachium pontis share a dc-link capacitance, and dc-link capacitance is arranged on the input of DC bus.
5. a kind of five-power level voltage source type converting means according to claim 1 and 2, it is characterized in that, the input that the first terminals (1), the second terminals (2), the 3rd terminals (3) are three-phase alternating current, dc-link capacitance is all installed in each brachium pontis, and every phase dc-link capacitance is installed near this phase brachium pontis.
6. a kind of five-power level voltage source type converting means according to claim 1 and 2, it is characterized in that, the input that the first terminals (1), the second terminals (2), the 3rd terminals (3) are three-phase alternating current, all brachium pontis share a dc-link capacitance, and dc-link capacitance is arranged on the input of DC bus.
7. a kind of five-power level voltage source type converting means according to claim 1 and 2, it is characterized in that, the input that the first terminals (1), the second terminals (2), the 3rd terminals (3) are three-phase alternating current, the output that the 4th terminals (4), the 5th terminals (5), the 6th terminals (6) are three-phase alternating current, dc-link capacitance is all installed in each brachium pontis, and every phase dc-link capacitance is installed near this phase brachium pontis.
8. a kind of five-power level voltage source type converting means according to claim 1 and 2, it is characterized in that, the input that the first terminals (1), the second terminals (2), the 3rd terminals (3) are three-phase alternating current, the output that the 4th terminals (4), the 5th terminals (5), the 6th terminals (6) are three-phase alternating current, all brachium pontis share a dc-link capacitance, and dc-link capacitance is arranged on the input of DC bus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320621036.2U CN203491923U (en) | 2013-10-09 | 2013-10-09 | Five-level voltage source converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320621036.2U CN203491923U (en) | 2013-10-09 | 2013-10-09 | Five-level voltage source converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203491923U true CN203491923U (en) | 2014-03-19 |
Family
ID=50262723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320621036.2U Expired - Lifetime CN203491923U (en) | 2013-10-09 | 2013-10-09 | Five-level voltage source converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203491923U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595281A (en) * | 2013-10-09 | 2014-02-19 | 徐州中矿大传动与自动化有限公司 | Five-level voltage source type conversion device |
| CN103986350A (en) * | 2014-05-23 | 2014-08-13 | 台达电子企业管理（上海）有限公司 | Five-level rectifier |
| CN103986358A (en) * | 2014-04-25 | 2014-08-13 | 哈尔滨工业大学 | Novel modular multi-level converter topology |
| WO2016119736A1 (en) * | 2015-01-29 | 2016-08-04 | 汪洪亮 | Five-level topology unit and five-level inverter |
| CN112332682A (en) * | 2021-01-06 | 2021-02-05 | 中国人民解放军海军工程大学 | Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter |
-
2013
- 2013-10-09 CN CN201320621036.2U patent/CN203491923U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595281A (en) * | 2013-10-09 | 2014-02-19 | 徐州中矿大传动与自动化有限公司 | Five-level voltage source type conversion device |
| CN103986358A (en) * | 2014-04-25 | 2014-08-13 | 哈尔滨工业大学 | Novel modular multi-level converter topology |
| CN103986358B (en) * | 2014-04-25 | 2016-06-22 | 哈尔滨工业大学 | A kind of modularization multi-level converter topology |
| CN103986350A (en) * | 2014-05-23 | 2014-08-13 | 台达电子企业管理（上海）有限公司 | Five-level rectifier |
| CN103986350B (en) * | 2014-05-23 | 2016-09-14 | 台达电子企业管理（上海）有限公司 | Five level rectifiers |
| WO2016119736A1 (en) * | 2015-01-29 | 2016-08-04 | 汪洪亮 | Five-level topology unit and five-level inverter |
| CN107210684A (en) * | 2015-01-29 | 2017-09-26 | 汪洪亮 | Five level topology units and five-electrical level inverter |
| CN107210684B (en) * | 2015-01-29 | 2019-05-24 | 汪洪亮 | Five level topology units and five-electrical level inverter |
| CN112332682A (en) * | 2021-01-06 | 2021-02-05 | 中国人民解放军海军工程大学 | Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter |
| CN112332682B (en) * | 2021-01-06 | 2021-05-07 | 中国人民解放军海军工程大学 | Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109391166B (en) | Conversion circuit, control method and power supply equipment | |
| CN103595281A (en) | Five-level voltage source type conversion device | |
| EP2879286A1 (en) | Five-level rectifier | |
| TWI539737B (en) | Five-level converting device | |
| CN203491923U (en) | Five-level voltage source converter | |
| CN102594187B (en) | Four-level topological unit and application circuit thereof | |
| CN101494425A (en) | Three-phase mixing multi-level inverter circuit | |
| CN102511123A (en) | Power converter | |
| CN110323959B (en) | Single-phase inverter capable of inhibiting secondary ripple and common-mode leakage current and control method thereof | |
| CN102510232A (en) | Five-level voltage source inverter | |
| CN104638940A (en) | Modular multi-level power electronic transformer based on cascading | |
| CN102594185B (en) | Four-level topology unit and application circuit thereof | |
| CN104617803A (en) | Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule | |
| TWI539736B (en) | Five-level converting device | |
| CN202475300U (en) | Five-level voltage source inverter | |
| CN104333249A (en) | Seven-level inverter circuit and control method thereof, multi-phase inverter and frequency converter | |
| CN102594188B (en) | Four-level topological unit and application circuit of four-level topological unit | |
| US10374504B2 (en) | Power unit and power electronic converting device | |
| CN102437761B (en) | Single-phase full bridge three-level inverter and three-phase three-level inverter | |
| CN215871225U (en) | Five-level voltage source type conversion device | |
| CN102801348A (en) | Three-phase five-level inverter | |
| CN104410309A (en) | Five-level voltage source type converting device | |
| CN115833635A (en) | T-type five-level voltage source type conversion system of heterogeneous power device | |
| CN114257107B (en) | NPC type three-level inverter circuit | |
| CN103973129A (en) | Soft-switching power electronic transformer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140319 |
|
| CX01 | Expiry of patent term |