CN108390552A - A kind of double inverse-impedance type submodules, control method and modularization multi-level converter - Google Patents
A kind of double inverse-impedance type submodules, control method and modularization multi-level converter Download PDFInfo
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- CN108390552A CN108390552A CN201810105607.4A CN201810105607A CN108390552A CN 108390552 A CN108390552 A CN 108390552A CN 201810105607 A CN201810105607 A CN 201810105607A CN 108390552 A CN108390552 A CN 108390552A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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Abstract
The present invention provides a kind of double inverse-impedance type submodules, control method and modularization multi-level converter, double inverse-impedance type submodules include the first inverse-impedance type unit, second inverse-impedance type unit, clamp diode D3 and clamp diode D4, double inverse-impedance type sub-modular structures are simple, direct fault current can be blocked, enhance the ride-through capability under DC grid failure, promote the operational reliability of DC grid, and under the premise of output level number is equal, direct fault current blocking ability and removing speed are equal to bridge-type submodule, and number of devices used and added losses are better than clamper type Shuangzi module, it need not for Fault Isolation function and more additional investment, reduce cost.The present invention analyzes the state that double inverse-impedance type submodules are in each device under normal mode and non-blocking mode both of which, and provide the output voltage of lower pair of inverse-impedance type submodule of different conditions, double inverse-impedance type submodules can directly transplanting semi-bridge type submodule modulation and control strategy, control process is simple, it is easy to accomplish.
Description
Technical field
The present invention relates to technical field of direct current power transmission, and in particular to a kind of double inverse-impedance type submodules, control method and module
Change multilevel converter.
Background technology
Semi-bridge type submodule (half bridge sub-module, HBSM) is current mould since its loss is small, at low cost
Main sub-modular structure to be applied in block multilevel converter (Modular Multilevel Converter, MMC).When
MMC occur DC side failure when, especially bipolar short trouble when, under positive current direction, submodule capacitor charging, MMC can
Fault current is blocked to provide an inverse electromotive force, but under negative current direction, antiparallel two poles lower bridge arm IGBT
Guan Kewei fault currents provide access, and system does not have fault current blocking ability at this time, can not be cut off by being latched IGBT
Short-circuit current has seriously endangered the safety of system, affects the operational reliability of system.
The submodule of MMC with DC Line Fault blocking ability mainly has full-bridge submodule (Full-Bridge Sub
Module, FBSM) and clamper type submodule (Clamp Double Sub Module, CDSM) etc., but with semi-bridge type submodule phase
Than, FBSM and CDSM there are switching devices it is more, control complexity is big the shortcomings of.Existing MMC is based on HBSM topological structures, by
In the energy force difference that the DC current failure of HBSM blocks, therefore it need to be used cooperatively AC circuit breaker isolated DC side failure, however
The problems such as AC circuit breaker is slow there are mechanical switch response speed causes DC transmission system that event cannot fast and effectively be isolated
Hinder electric current.Although using dc circuit breaker short trouble can be quickly isolated, the Fault Isolation technology of dc circuit breaker not enough at
It is ripe, and need to put into the cost of great number for researching and developing and designing high voltage DC breaker.
Invention content
In order to overcome the defect of the above-mentioned submodule of semi-bridge type in the prior art DC current failure blocking ability difference, the present invention
A kind of double inverse-impedance type submodules, control method and modularization multi-level converter are provided, double inverse-impedance type submodules include first inverse
Resistance type unit, the second inverse-impedance type unit, clamp diode D3 and clamp diode D4, double inverse-impedance type sub-modular structures are simple, tool
The ability that standby DC current failure blocks, and need not for Fault Isolation function and more additional investment, reduce cost.
In order to achieve the above-mentioned object of the invention, the present invention adopts the following technical scheme that：
On the one hand, the present invention provides a kind of double inverse-impedance type submodules, including the first inverse-impedance type unit, the second inverse-impedance type list
Member, clamp diode D3 and clamp diode D4；
First port, second port and the third port of the first inverse-impedance type unit are separately connected clamp diode D4's
Cathode, the first port of the second inverse-impedance type unit and common point M；The second port of the second inverse-impedance type unit connects clamper two
The anode of pole pipe D3, the third port of the second inverse-impedance type unit connect the anode and common point N of clamp diode D4 simultaneously,
The cathode connection common point M of the clamp diode D3.
The first inverse-impedance type unit includes the first IGBT module, the first RB-IGBT modules and storage capacitor C1；
First IGBT module include IGBT1 and with the antiparallel diode D1 of IGBT1；
The first RB-IGBT modules include antiparallel RB-IGBT1 and RB-IGBT2.
The collector of the IGBT1 and the anode of storage capacitor C1 are all connected with the first port of the first inverse-impedance type unit, institute
The first end of the emitter and the first RB-IGBT modules of stating IGBT1 is all connected with the third port of the first inverse-impedance type unit, and described
The second end of one RB-IGBT modules and the cathode of storage capacitor C1 are all connected with the second port of the first inverse-impedance type unit.
The second inverse-impedance type unit includes the second IGBT module, the 2nd RB-IGBT modules and storage capacitor C2；
Second IGBT module include IGBT2 and with the antiparallel diode D2 of IGBT2；
The 2nd RB-IGBT modules include antiparallel RB-IGBT3 and RB-IGBT4.
The first end of the 2nd RB-IGBT modules and the anode of storage capacitor C2 are all connected with the of the second inverse-impedance type unit
Single port, the second end of the 2nd RB-IGBT modules and the collector of IGBT2 are all connected with the third end of the second inverse-impedance type unit
Mouth, the emitter of the IGBT2 and the cathode of storage capacitor C2 are all connected with the second port of the second inverse-impedance type unit.
On the other hand, the present invention also provides a kind of control methods of double inverse-impedance type submodules, including double inverse-impedance type submodules
Modularization multi-level converter when being in normal mode, the control method includes：
State 11)：IGBT1 and IGBT2 conductings and RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 shutdown, institute
The output voltage for stating double inverse-impedance type submodules is+2uc, ucIndicate energy storage electricity in the first inverse-impedance type unit or the second inverse-impedance type unit
The voltage of appearance；
State 12)：IGBT1, RB-IGBT3 and RB-IGBT4 are connected and RB-IGBT1, RB-IGBT2 and IGBT2 are turned off, or
RB-IGBT1, RB-IGBT2 and IGBT2 are connected and IGBT1, RB-IGBT3 and RB-IGBT4 are turned off, double inverse-impedance type submodules
Output voltage be+uc；
State 13)：RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are connected and IGBT1 and IGBT2 shutdowns, institute
The output voltage for stating double inverse-impedance type submodules is 0.
Another aspect, the present invention also provides a kind of control methods of double inverse-impedance type submodules, including double inverse-impedance type submodules
Modularization multi-level converter when being in non-blocking mode, the control method includes：
State 21)：IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and electric current
When flow direction is common point M to common point N, the output voltage of double inverse-impedance type submodules is+2uc, ucIndicate the first inverse-impedance type list
The voltage of storage capacitor in member or the second inverse-impedance type unit；
State 22)：IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and electric current
When flow direction is common point N to common point M, the output voltage of double inverse-impedance type submodules is -2uc。
The state 21) in, current path is：Common point M → diode D1 → storage capacitor C1 → storage capacitor C2 →
Diode D2 → common point N.
The state 22) in, current path is：Common point N → clamp diode D4 → storage capacitor C1 → storage capacitor
C2 → clamp diode D3 → common point M.
Another aspect, the present invention provide a kind of modularization multi-level converter, including three phase elements, each phase element packet
Bridge arm and lower bridge arm are included, the upper bridge arm includes N number of concatenated double inverse-impedance type submodules and bridge arm reactance, the lower bridge arm packet
Include N number of concatenated semi-bridge type submodule and bridge arm reactance；And/or
The upper bridge arm includes N number of concatenated semi-bridge type submodule and bridge arm reactance, and the lower bridge arm includes N number of concatenated
Double inverse-impedance type submodules and bridge arm reactance.
Another aspect, the present invention provide a kind of modularization multi-level converter, including three phase elements, each phase element packet
Bridge arm and lower bridge arm are included, the upper bridge arm and lower bridge arm include double inverse-impedance type submodules, semi-bridge type submodule and bridge arm electricity
It is anti-.
The exchange side bus line voltage of the modularization multi-level converter determines as the following formula：
Wherein, uLpeakThe exchange side bus line voltage of representation module multilevel converter；M indicates voltage modulated ratio, and 0
<M<1；udcThe direct current side bus line voltage of representation module multilevel converter, and udc=(NH+2NRB)uc, ucIndicate that first is inverse
The voltage of storage capacitor in resistance type unit or the second inverse-impedance type unit；NHIndicate the number of semi-bridge type submodule in up/down bridge arm,
NRBIt indicates the number of double inverse-impedance type submodules in up/down bridge arm, and meets
Compared with the immediate prior art, technical solution provided by the invention has the advantages that：
Double inverse-impedance type submodules provided by the invention include the first inverse-impedance type unit, the second inverse-impedance type unit, two pole of clamper
Pipe D3 and clamp diode D4, wherein first port, second port and the third port of the first inverse-impedance type unit are separately connected pincers
The cathode of position diode D4, the first port and common point M of the second inverse-impedance type unit；The second port of second inverse-impedance type unit connects
The anode of clamp diode D3 is connect, the second inverse-impedance type unit third port connects the anode and common point of clamp diode D4 simultaneously
The cathode of N, clamp diode D3 connect common point M, and double inverse-impedance type sub-modular structures are simple, and enhance under DC grid failure
Ride-through capability；
Double inverse-impedance type submodules provided by the invention have normal mode and locking both of which, equal in output level number
Under the premise of, direct fault current blocking ability and removing speed are equal to bridge-type submodule, and number of devices used and additional
Loss is better than clamper type Shuangzi module, need not for Fault Isolation function and more additional investment, reduce cost；
Double inverse-impedance type submodules provided by the invention can block direct fault current, enhance the operation peace of DC grid
Entirely, the operational reliability of DC grid is promoted；
Double inverse-impedance type submodules provided by the invention are suitable for MMC-HVDC, and the topological structure of double inverse-impedance type submodules is still adopted
With the control measure of HBSC, the adjusting of direct fault current blocking ability is realized by adjusting the size of storage capacitor；
The control method of double inverse-impedance type submodules provided by the invention has made a concrete analysis of double inverse-impedance type submodules and has been in normal
The state of each device under pattern and non-blocking mode both of which, and provide the output electricity of lower pair of inverse-impedance type submodule of different conditions
Pressure, double inverse-impedance type submodules can directly transplanting semi-bridge type submodule modulation and control strategy, control process is simple, is easy to real
It is existing.
Description of the drawings
Fig. 1 is double inverse-impedance type sub-modular structure schematic diagrames in the embodiment of the present invention 1；
Fig. 2 is the schematic diagram that current direction is common point M to common point N in the embodiment of the present invention 3；
Fig. 3 is the schematic diagram that current direction is common point N to common point M in the embodiment of the present invention 3.
Fig. 4 is the current direction schematic diagram for the modularization multi-level converter that the embodiment of the present invention 6 provides.
Specific implementation mode
Invention is further described in detail below in conjunction with the accompanying drawings.
Embodiment 1
The embodiment of the present invention 1 provides a kind of double inverse-impedance type submodules, and structure chart is as shown in Figure 1, A, B, C table in Fig. 1
Show that first port, second port and the third port of the first inverse-impedance type unit, D, E, F indicate the of the second inverse-impedance type unit respectively
Single port, second port and third port, M and N indicate common point, specifically include the first inverse-impedance type unit, the second inverse-impedance type list
Member, clamp diode D3 and clamp diode D4；Specifically, wherein the first port A of the first inverse-impedance type unit, second port B
It is separately connected the cathode of clamp diode D4, the first port D and common point M of the second inverse-impedance type unit with third port C；Second
The anode of the second port E connection clamp diodes D3 of inverse-impedance type unit, the second inverse-impedance type unit third port F while connection clamp
The anode and common point N of position diode D4, the cathode connection common point M of clamp diode D3.
Above-mentioned first inverse-impedance type unit includes the first IGBT (Reverse Blocking-insulated Gate
Bipolar Transistor) module, the first RB-IGBT modules and storage capacitor C1；
First IGBT module include IGBT1 and with the antiparallel diode D1 of IGBT1；
First RB-IGBT modules include antiparallel RB-IGBT1 and RB-IGBT2.
The collector of IGBT1 and the anode of storage capacitor C1 are all connected with the first port A, IGBT1 of the first inverse-impedance type unit
Emitter and the first ends of the first RB-IGBT modules be all connected with the third port C, the first RB-IGBT of the first inverse-impedance type unit
The second end of module and the cathode of storage capacitor C1 are all connected with the second port B of the first inverse-impedance type unit.
Second inverse-impedance type unit includes the second IGBT module, the 2nd RB-IGBT modules and storage capacitor C2；
Second IGBT module include IGBT2 and with the antiparallel diode D2 of IGBT2；
2nd RB-IGBT modules include antiparallel RB-IGBT3 and RB-IGBT4.
The first end of 2nd RB-IGBT modules and the anode of storage capacitor C2 are all connected with the first end of the second inverse-impedance type unit
Mouth D, the second end of the 2nd RB-IGBT modules and the collector of IGBT2 are all connected with the third port F of the second inverse-impedance type unit,
The emitter of IGBT2 and the cathode of storage capacitor C2 are all connected with the second port E of the second inverse-impedance type unit.
Embodiment 2
The embodiment of the present invention 2 provides a kind of control method of double inverse-impedance type submodules, includes the mould of double inverse-impedance type submodules
When block multilevel converter is in normal mode, which includes：
State 11)：IGBT1 and IGBT2 conductings and RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 shutdown, institute
The output voltage for stating double inverse-impedance type submodules is+2uc, ucIndicate energy storage electricity in the first inverse-impedance type unit or the second inverse-impedance type unit
The voltage of appearance；
State 12)：IGBT1, RB-IGBT3 and RB-IGBT4 are connected and RB-IGBT1, RB-IGBT2 and IGBT2 are turned off, or
RB-IGBT1, RB-IGBT2 and IGBT2 are connected and IGBT1, RB-IGBT3 and RB-IGBT4 are turned off, double inverse-impedance type submodules
Output voltage be+uc；
State 13)：RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are connected and IGBT1 and IGBT2 shutdowns, institute
The output voltage for stating double inverse-impedance type submodules is 0.
When modularization multi-level converter where above-mentioned double inverse-impedance type submodules is in normal mode, each device is opened
Off status is specifically as shown in table 1, wherein uMNIndicate the output voltage of double inverse-impedance type submodules；
Table 1
Embodiment 3
The embodiment of the present invention 3 provides a kind of control method of double inverse-impedance type submodules, includes the mould of double inverse-impedance type submodules
When block multilevel converter is in non-blocking mode, which includes：
State 21)：IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and electric current
When flow direction is common point M to common point N (current direction is common point M as shown in Figure 2 to common point N schematic diagrames), double inverse-impedance types
The output voltage of submodule is+2uc, ucIndicate the voltage of storage capacitor in the first inverse-impedance type unit or the second inverse-impedance type unit；
Current path is：Common point M → diode D1 → storage capacitor C1 → storage capacitor C2 → diode D2 → public
Point N；
State 22)：IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and electric current
When flow direction is common point N to common point M (current direction is common point N as shown in Figure 2 to common point M schematic diagrames), double inverse-impedance types
The output voltage of submodule is -2uc。
Current path is：Common point N → clamp diode D4 → storage capacitor C1 → storage capacitor C2 → clamp diode
D3 → common point M.
When modularization multi-level converter where above-mentioned double inverse-impedance type submodules is in non-blocking mode, each device is opened
Off status is specifically as shown in table 2, wherein uMNIndicate the output voltage of double inverse-impedance type submodules, iMNIndicate double inverse-impedance type submodules
Electric current, iMNMore than 0, indicate current direction for common point M to common point N, iMNLess than 0, expression current direction is common point N
To common point M.
Table 2
Embodiment 4
The embodiment of the present invention 4 provides a kind of modularization multi-level converter, including three phase elements, each phase element include
Upper bridge arm and lower bridge arm, upper bridge arm include the double inverse-impedance type submodules and bridge arm reactance that multiple concatenated above-described embodiments 1 provide,
Lower bridge arm includes multiple concatenated semi-bridge type submodules and bridge arm reactance.
Embodiment 5
The embodiment of the present invention 5 provides a kind of modularization multi-level converter, including three phase elements, each phase element include
Upper bridge arm and lower bridge arm, the upper bridge arm include the semi-bridge type submodule that multiple concatenated above-described embodiments 1 provide and bridge arm electricity
Anti-, the lower bridge arm includes multiple concatenated double inverse-impedance type submodules and bridge arm reactance.
Embodiment 6
The embodiment of the present invention 6 provides a kind of modularization multi-level converter, including three phase elements, each phase element include
Upper bridge arm and lower bridge arm, upper bridge arm and lower bridge arm include double inverse-impedance type submodules, the semi-bridge type submodule that above-described embodiment 1 provides
Block and bridge arm reactance.When current direction is common point N to common point M in double inverse-impedance type submodules, what the embodiment of the present invention 6 provided
For the current direction schematic diagram of modularization multi-level converter as shown in figure 4, in Fig. 4, SM indicates submodule, LaFor bridge arm reactance,
VdcFor the output voltage of modularization multi-level converter.
The exchange side bus line voltage for the modularization multi-level converter that the embodiment of the present invention 6 provides determines as the following formula：
Wherein, uLpeakThe exchange side bus line voltage of representation module multilevel converter；M indicates voltage modulated ratio, and 0
<M<1；udcThe direct current side bus line voltage of representation module multilevel converter, and udc=(NH+2NRB)uc, ucIndicate that first is inverse
The voltage of storage capacitor in resistance type unit or the second inverse-impedance type unit；NHIndicate the number of semi-bridge type submodule in up/down bridge arm,
NRBIt indicates the number of double inverse-impedance type submodules in up/down bridge arm, and meets
For convenience of description, each section of apparatus described above is divided into various modules with function or unit describes respectively.
Certainly, each module or the function of unit can be realized in same or multiple softwares or hardware when implementing the application.
It should be understood by those skilled in the art that, embodiments herein can be provided as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, the application can be used in one or more wherein include computer usable program code computer
The computer program production implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
The application is with reference to method, the flow of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that can be realized by computer program instructions every first-class in flowchart and/or the block diagram
The combination of flow and/or box in journey and/or box and flowchart and/or the block diagram.These computer programs can be provided
Instruct the processor of all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine so that the instruction executed by computer or the processor of other programmable data processing devices is generated for real
The device for the function of being specified in present one flow of flow chart or one box of multiple flows and/or block diagram or multiple boxes.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that instruction generation stored in the computer readable memory includes referring to
Enable the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one box of block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device so that count
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, in computer or
The instruction executed on other programmable devices is provided for realizing in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Finally it should be noted that：The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, institute
The those of ordinary skill in category field with reference to above-described embodiment still can to the present invention specific implementation mode modify or
Equivalent replacement, these are applying for this pending hair without departing from any modification of spirit and scope of the invention or equivalent replacement
Within bright claims.
Claims (10)
1. a kind of double inverse-impedance type submodules, which is characterized in that including the first inverse-impedance type unit, the second inverse-impedance type unit, clamper two
Pole pipe D3 and clamp diode D4；
First port, second port and the third port of the first inverse-impedance type unit are separately connected the moon of clamp diode D4
Pole, the first port of the second inverse-impedance type unit and common point M；
The anode of the second port connection clamp diode D3 of the second inverse-impedance type unit, the of the second inverse-impedance type unit
Three ports connect the anode of clamp diode D4 and the cathode connection common point M of common point N, the clamp diode D3 simultaneously.
2. double inverse-impedance type submodules according to claim 1, which is characterized in that the first inverse-impedance type unit includes first
IGBT module, the first RB-IGBT modules and storage capacitor C1；
First IGBT module include IGBT1 and with the antiparallel diode D1 of IGBT1；
The first RB-IGBT modules include antiparallel RB-IGBT1 and RB-IGBT2.
3. double inverse-impedance type submodules according to claim 2, which is characterized in that the collector of the IGBT1 and energy storage electricity
The anode for holding C1 is all connected with the first port of the first inverse-impedance type unit, the emitter of the IGBT1 and the first RB-IGBT modules
First end is all connected with the third port of the first inverse-impedance type unit, the second end and storage capacitor C1 of the first RB-IGBT modules
Cathode be all connected with the second port of the first inverse-impedance type unit.
4. double inverse-impedance type submodules according to claim 3, which is characterized in that the second inverse-impedance type unit includes second
IGBT module, the 2nd RB-IGBT modules and storage capacitor C2；
Second IGBT module include IGBT2 and with the antiparallel diode D2 of IGBT2；
The 2nd RB-IGBT modules include antiparallel RB-IGBT3 and RB-IGBT4；
The first end of the 2nd RB-IGBT modules and the anode of storage capacitor C2 are all connected with the first end of the second inverse-impedance type unit
Mouth, the second end of the 2nd RB-IGBT modules and the collector of IGBT2 are all connected with the third port of the second inverse-impedance type unit,
The emitter of the IGBT2 and the cathode of storage capacitor C2 are all connected with the second port of the second inverse-impedance type unit.
5. a kind of control method of double inverse-impedance type submodules as claimed in claim 4, which is characterized in that including double inverse-impedance types
When the modularization multi-level converter of module is in normal mode, the control method includes：
State 11)：IGBT1 and IGBT2 conductings and RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 shutdown, it is described double
The output voltage of inverse-impedance type submodule is+2uc, ucIndicate storage capacitor in the first inverse-impedance type unit or the second inverse-impedance type unit
Voltage；
State 12)：IGBT1, RB-IGBT3 and RB-IGBT4 are connected and RB-IGBT1, RB-IGBT2 and IGBT2 are turned off or RB-
IGBT1, RB-IGBT2 and IGBT2 are connected and IGBT1, RB-IGBT3 and RB-IGBT4 are turned off, double inverse-impedance type submodules
Output voltage is+uc；
State 13)：RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are connected and IGBT1 and IGBT2 shutdowns, described double
The output voltage of inverse-impedance type submodule is 0.
6. a kind of control method of double inverse-impedance type submodules as claimed in claim 4, which is characterized in that including double inverse-impedance types
When the modularization multi-level converter of module is in non-blocking mode, the control method includes：
State 21)：IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and current direction
For common point M to common point N when, the output voltages of double inverse-impedance type submodules is+2uc, ucIndicate the first inverse-impedance type unit or
The voltage of storage capacitor in second inverse-impedance type unit；
State 22)：IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and current direction
For common point N to common point M when, the output voltages of double inverse-impedance type submodules is -2uc。
7. the control method of double inverse-impedance type submodules according to claim 6, which is characterized in that the state 21) in, electricity
Logical circulation road is：Common point M → diode D1 → storage capacitor C1 → storage capacitor C2 → diode D2 → common point N.
8. the control method of double inverse-impedance type submodules according to claim 6, which is characterized in that the state 22) in, electricity
Logical circulation road is：Common point N → clamp diode D4 → storage capacitor C1 → storage capacitor C2 → clamp diode D3 → common point
M。
9. a kind of modularization multi-level converter, which is characterized in that including three phase elements, each phase element include upper bridge arm and
Lower bridge arm, the upper bridge arm include N number of concatenated double inverse-impedance type submodules and bridge arm electricity as described in claim 1-4 is any
Anti-, the lower bridge arm includes N number of concatenated semi-bridge type submodule and bridge arm reactance；And/or
The upper bridge arm includes N number of concatenated semi-bridge type submodule and bridge arm reactance, and the lower bridge arm includes N number of concatenated as weighed
Profit requires 1-4 any double inverse-impedance type submodules and bridge arm reactance.
10. modularization multi-level converter according to claim 9, which is characterized in that the modular multilevel change of current
The exchange side bus line voltage of device determines as the following formula：
Wherein, uLpeakThe exchange side bus line voltage of representation module multilevel converter；M indicates voltage modulated ratio, and 0<M<
1；udcThe direct current side bus line voltage of representation module multilevel converter, and udc=(NH+2NRB)uc, ucIndicate the first reverse blocking
The voltage of storage capacitor in type unit or the second inverse-impedance type unit；NHIndicate the number of semi-bridge type submodule in up/down bridge arm, NRB
It indicates the number of double inverse-impedance type submodules in up/down bridge arm, and meets 4NRBuc≥uLpeak,
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810105607.4A CN108390552A (en) | 2018-02-02 | 2018-02-02 | A kind of double inverse-impedance type submodules, control method and modularization multi-level converter |
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| CN109256969A (en) * | 2018-08-22 | 2019-01-22 | 中国电力科学研究院有限公司 | A kind of Novel T-shaped submodule and its topological structure |
| CN109802356A (en) * | 2019-01-23 | 2019-05-24 | 上海交通大学 | Converter topology |
| CN110247566A (en) * | 2019-07-05 | 2019-09-17 | 沈阳工业大学 | A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method |
| CN110829867A (en) * | 2019-11-12 | 2020-02-21 | 华北电力大学（保定） | Novel MMC submodule topology with fault current symmetrical clearing capacity |
| CN110890743A (en) * | 2019-11-25 | 2020-03-17 | 上海交通大学 | Low-loss modular multilevel DC transformer with fault blocking capability |
| CN110994974A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multi-level direct current-direct current converter and submodule thereof |
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| CN109256969A (en) * | 2018-08-22 | 2019-01-22 | 中国电力科学研究院有限公司 | A kind of Novel T-shaped submodule and its topological structure |
| CN109802356A (en) * | 2019-01-23 | 2019-05-24 | 上海交通大学 | Converter topology |
| CN110247566A (en) * | 2019-07-05 | 2019-09-17 | 沈阳工业大学 | A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method |
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| CN110890743A (en) * | 2019-11-25 | 2020-03-17 | 上海交通大学 | Low-loss modular multilevel DC transformer with fault blocking capability |
| CN110994974A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multi-level direct current-direct current converter and submodule thereof |
| CN110994974B (en) * | 2019-11-25 | 2020-11-20 | 上海交通大学 | Low-loss modular multi-level direct current-direct current converter and submodule thereof |
| CN110890743B (en) * | 2019-11-25 | 2020-11-20 | 上海交通大学 | Low-loss modular multilevel DC transformer with fault blocking capability |
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