CN105471302A - Auxiliary capacitor centralized half-bridge MMC automatic voltage-equalizing topology based on equality constraint - Google Patents

Auxiliary capacitor centralized half-bridge MMC automatic voltage-equalizing topology based on equality constraint Download PDF

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CN105471302A
CN105471302A CN201610047406.4A CN201610047406A CN105471302A CN 105471302 A CN105471302 A CN 105471302A CN 201610047406 A CN201610047406 A CN 201610047406A CN 105471302 A CN105471302 A CN 105471302A
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phase
brachium pontis
submodule
module
sub
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赵成勇
刘航
许建中
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North China Electric Power University
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North China Electric Power University
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Priority to CN201610047406.4A priority Critical patent/CN105471302A/en
Publication of CN105471302A publication Critical patent/CN105471302A/en
Priority to EP17152577.7A priority patent/EP3197038B1/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/49—Combination of the output voltage waveforms of a plurality of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage

Abstract

The invention provides an auxiliary capacitor centralized half-bridge MMC automatic voltage-equalizing topology based on equality constraint. According to the half-bridge MMC automatic voltage-equalizing topology, a half-bridge MMC model is electrically connected with an automatic voltage-equalizing auxiliary circuit through 6N mechanical switches in the auxiliary circuit; when the mechanical switches are closed, the auxiliary capacitor centralized half-bridge MMC automatic voltage-equalizing topology based on the equality constraint is formed by the half-bridge MMC model and the automatic voltage-equalizing auxiliary circuit; and when the mechanical switches are opened, the topology is equivalent to the half-bridge MMC topology. Under a condition of de-emphasizing the difference of the two kinds of topologies, 6N mechanical switches can be omitted from the automatic voltage-equalizing auxiliary circuit, and can be replaced by wires to directly constitute the auxiliary capacitor centralized half-bridge MMC automatic voltage-equalizing topology based on the equality constraint. According to the half-bridge MMC automatic voltage-equalizing topology, the capacitive voltage balance for a sub module can be automatically realized on a basis of completing direct current/alternating current energy conversion without depending on special voltage-equalizing control; and in addition, the triggering frequency and the capacitance value of the sub module can be correspondingly lowered, and the half bridge MMC base frequency modulation can be realized.

Description

The centralized half-bridge MMC of auxiliary capacitor based on equality constraint is from all pressing topology
Technical field
The present invention relates to flexible transmission field, being specifically related to the centralized half-bridge MMC of a kind of auxiliary capacitor based on equality constraint from all pressing topology.
Background technology
Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, MMC adopts submodule (Sub-module, SM) mode of cascade constructs converter valve, avoid the direct series connection of large metering device, reduce the conforming requirement of device, be convenient to dilatation and redundant configuration simultaneously.Along with the rising of level number, output waveform, close to sinusoidal, effectively can avoid the defect of low level VSC-HVDC.
Half-bridge MMC is combined by half-bridge submodule, and half-bridge submodule is by 2 IGBT module, and 1 sub-module capacitance, 1 thyristor and 1 mechanical switch are formed, and cost is low, and running wastage is little.
Different from two level, three level VSC, the DC voltage of half-bridge MMC is not supported by a bulky capacitor, but is supported by a series of separate suspension submodule capacitances in series.In order to ensure the waveform quality that AC voltage exports and ensure that in module, each power semiconductor bears identical stress, also in order to better support direct voltage, reduce alternate circulation, must ensure that submodule capacitor voltage is in the state of dynamic stability in the periodicity flowing of brachium pontis power.
Sequence based on capacitance voltage sequence all presses algorithm to be the main flow thinking solving half-bridge submodule capacitor voltage equalization problem in half-bridge MMC at present, the good all pressures effect of this scheme can be verified in emulation and practice, but also constantly to expose its some inherent shortcomings.First, the realization of ranking function must rely on the Millisecond sampling of capacitance voltage, needs a large amount of transducers and optical-fibre channel to be coordinated; Secondly, when half-bridge submodule number increases, the operand of capacitance voltage sequence increases rapidly, for the hardware designs of controller brings huge challenge; In addition, sequence all presses the cut-off frequency of the realization of algorithm to submodule to have very high requirement, cut-offs frequency and all presses effect to be closely related, in practice process, may because all press the restriction of effect, the trigger rate of raising submodule of having to, and then bring the increase of converter loss.
Document " ADC-LinkVoltageSelf-BalanceMethodforaDiode-ClampedModula rMultilevelConverterWithMinimumNumberofVoltageSensors ", proposes a kind of clamp diode and transformer of relying on to realize the thinking of MMC submodule capacitor voltage equilibrium.But the program to a certain degree destroys the modular nature of submodule in design, submodule capacitive energy interchange channel is also confined to mutually, the existing structure of MMC could not be made full use of, while being introduced in of three transformers makes control strategy complicated, also can bring larger improvement cost.
Summary of the invention
For the problems referred to above, the object of the invention is to propose a kind of economy, modular, do not rely on and all press algorithm, simultaneously can the half-bridge MMC of corresponding reduction submodule trigger rate and capacitor's capacity from all pressing topology.
The concrete constituted mode of the present invention is as follows.
The centralized half-bridge MMC of auxiliary capacitor based on equality constraint is from all pressing topology, and comprise the half-bridge MMC model be made up of A, B, C three-phase, A, B, C three-phase is respectively by 2 nindividual half-bridge submodule, 2 brachium pontis reactors are in series; Comprise by 6 nindividual mechanical switch, 6 n+ 5 clamp diodes, 2 auxiliary capacitors, 2 auxiliary IGBT module compositions from all pressing subsidiary loop.
The centralized half-bridge MMC of the above-mentioned auxiliary capacitor based on equality constraint is from all pressing topology, 1st submodule of brachium pontis in A phase, its submodule electric capacity negative pole is connected with the 2nd sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with DC bus positive pole; In A phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity negative pole downwards with the of brachium pontis in A phase i+ 1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point upwards with of brachium pontis in A phase i-1 sub-module capacitance negative pole is connected; In A phase brachium pontis nindividual submodule, its submodule electric capacity negative pole is connected through the 1st sub-module I GBT module mid point of the lower brachium pontis of two brachium pontis reactors and A phase downwards, its submodule IGBT module mid point upwards with the of brachium pontis in A phase n-1 sub-module capacitance negative pole is connected; The of the lower brachium pontis of A phase iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity negative pole downwards with the of A phase time brachium pontis i+ 1 sub-module I GBT module mid point is connected, its IGBT module mid point upwards with A phase lower brachium pontis the i-1 sub-module capacitance negative pole is connected; The of the lower brachium pontis of A phase nindividual submodule, its submodule electric capacity negative pole is connected with DC bus negative pole downwards, its submodule IGBT module mid point upwards with A phase lower brachium pontis the n-1 sub-module capacitance negative pole is connected; 1st submodule of brachium pontis in B phase, its submodule capacitance cathode is upwards connected with DC bus positive pole, and its submodule IGBT module mid point is connected with the 2nd sub-module capacitance positive pole of brachium pontis in B phase downwards; In B phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule capacitance cathode upwards with of brachium pontis in B phase i-1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point downwards with the of brachium pontis in B phase i+ 1 sub-module capacitance positive pole is connected; In B phase brachium pontis nindividual submodule, its submodule capacitance cathode upwards with of brachium pontis in B phase n-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is connected through the 1st sub-module capacitance positive pole of the lower brachium pontis of two brachium pontis reactors and B phase downwards; The of the lower brachium pontis of B phase iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule capacitance cathode upwards with B phase lower brachium pontis the i-1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point downwards with the of B phase time brachium pontis i+ 1 sub-module capacitance positive pole is connected; The of the lower brachium pontis of B phase nindividual submodule, its submodule capacitance cathode is the lower brachium pontis the with B phase upwards n-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is connected with DC bus negative pole downwards; The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.
The centralized half-bridge MMC of the above-mentioned auxiliary capacitor based on equality constraint is from all pressing topology, and from all pressing in subsidiary loop, first auxiliary IGBT module negative pole of auxiliary capacitor positive pole connection connects clamp diode and be incorporated to DC bus positive pole; Second auxiliary capacitor negative pole connects auxiliary IGBT module positive pole connection clamp diode and is incorporated to DC bus negative pole.Clamp diode, by the 1st sub-module capacitance and first auxiliary capacitor positive pole in brachium pontis in mechanical switch connection A phase; The is connected in A phase in brachium pontis by mechanical switch iindividual sub-module capacitance and i+ 1 sub-module capacitance positive pole, wherein ivalue be 1 ~ n-1; The is connected in A phase in brachium pontis by mechanical switch nindividual sub-module capacitance brachium pontis 1st sub-module capacitance positive pole lower to A phase; The is connected in the lower brachium pontis of A phase by mechanical switch ithe lower brachium pontis of individual sub-module capacitance and A phase the i+ 1 sub-module capacitance positive pole, wherein the value of i be 1 ~ n-1; The is connected in the lower brachium pontis of A phase by mechanical switch nindividual sub-module capacitance and second auxiliary capacitor positive pole.Clamp diode, by the 1st sub-module capacitance and first auxiliary capacitor negative pole in brachium pontis in mechanical switch connection B phase; The is connected in B phase in brachium pontis by mechanical switch iindividual sub-module capacitance and i+ 1 sub-module capacitance negative pole, wherein ivalue be 1 ~ n-1; The is connected in B phase in brachium pontis by mechanical switch nindividual sub-module capacitance brachium pontis 1st sub-module capacitance negative pole lower to B phase; The is connected in the lower brachium pontis of B phase by mechanical switch ithe lower brachium pontis of individual sub-module capacitance and B phase the i+ 1 sub-module capacitance negative pole, wherein ivalue be 1 ~ n-1; The is connected in the lower brachium pontis of B phase by mechanical switch nindividual sub-module capacitance and second auxiliary capacitor negative pole.The annexation of C phase clamp diode is corresponding with the annexation of its submodule.
Accompanying drawing explanation
Fig. 1 is the structural representation of half-bridge submodule;
Fig. 2 is from all pressing topology based on the centralized half-bridge MMC of auxiliary capacitor of equality constraint.
Embodiment
For setting forth performance of the present invention and operation principle further, be specifically described to the constituted mode invented and operation principle below in conjunction with accompanying drawing.But be not limited to Fig. 2 based on the half-bridge MMC of this principle from all pressing topology.
With reference to figure 2, the centralized half-bridge MMC of the auxiliary capacitor based on equality constraint from all pressing topology, comprises the half-bridge MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively by nindividual half-bridge submodule and 1 brachium pontis reactor are in series; Comprise by 6 nindividual mechanical switch, 6 n+ 5 clamp diodes, 2 auxiliary capacitors, 2 auxiliary IGBT module compositions from all pressing subsidiary loop.
In half-bridge MMC model, the 1st submodule of brachium pontis in A phase, its submodule electric capacity c -au-_1negative pole is connected with the 2nd sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with DC bus positive pole; In A phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- au-_ i negative pole downwards with the of brachium pontis in A phase i+ 1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point upwards with of brachium pontis in A phase i-1 sub-module capacitance c- au-_ i-1 negative pole is connected; In A phase brachium pontis nindividual submodule, its submodule electric capacity c -au-_ n negative pole is downwards through two brachium pontis reactors l 0be connected with the 1st sub-module I GBT module mid point of the lower brachium pontis of A phase, its submodule IGBT module mid point upwards with the of brachium pontis in A phase n-1 sub-module capacitance c -au-_ n-1 negative pole is connected; The of the lower brachium pontis of A phase iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- al-_ i negative pole downwards with the of A phase time brachium pontis i+ 1 sub-module I GBT module mid point is connected, its IGBT module mid point upwards with A phase lower brachium pontis the i-1 sub-module capacitance c -al-_ i-1 negative pole is connected; The of the lower brachium pontis of A phase nindividual submodule, its submodule electric capacity c -al_ n negative pole is connected with DC bus negative pole downwards, its submodule IGBT module mid point upwards with A phase lower brachium pontis the n-1 sub-module capacitance c -al-_ n-1 negative pole is connected; 1st submodule of brachium pontis in B phase, its submodule electric capacity c- bu-_1positive pole is upwards connected with DC bus positive pole, its submodule IGBT module mid point downwards with the 2nd sub-module capacitance of brachium pontis in B phase c- bu-_2positive pole is connected; In B phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- bu-_ i positive pole upwards with of brachium pontis in B phase i-1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point downwards with the of brachium pontis in B phase i+ 1 sub-module capacitance c- bu-_ i+ 1 positive pole is connected; In B phase brachium pontis nindividual submodule, its submodule electric capacity c -bu-_ n positive pole upwards with of brachium pontis in B phase n-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards through two brachium pontis reactors l 0with the 1st sub-module capacitance of the lower brachium pontis of B phase c -bl-_1positive pole is connected; The of the lower brachium pontis of B phase iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- bl_ i positive pole upwards with B phase lower brachium pontis the i-1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point downwards with the of B phase time brachium pontis i+ 1 sub-module capacitance c- bl-_ i+ 1 positive pole is connected; The of the lower brachium pontis of B phase nindividual submodule, its submodule electric capacity c- bl_ n positive pole is the lower brachium pontis the with B phase upwards n-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is connected with DC bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule is consistent with A.
From all pressing in subsidiary loop, auxiliary capacitor c 1positive pole connects auxiliary IGBT module t 1, negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor c 2negative pole connects auxiliary IGBT module t 2, positive pole connects clamp diode and is incorporated to DC bus negative pole.Clamp diode, passes through mechanical switch k au_131st sub-module capacitance in brachium pontis in connection A phase c- au-_1with auxiliary capacitor c 1positive pole; Pass through mechanical switch k au_ i3 , k au_( i+ 1) 3 to connect in A phase in brachium pontis the iindividual sub-module capacitance c- au-_ i with i+ 1 sub-module capacitance c- au-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k au_ n3 , k al_13to connect in A phase in brachium pontis the nindividual sub-module capacitance c -au-_ n brachium pontis 1st sub-module capacitance lower to A phase c- al-_1positive pole; Pass through mechanical switch k al_ i3 , k al_( i+ 1) 3 to connect in the lower brachium pontis of A phase the iindividual sub-module capacitance c -al-_ i with the lower brachium pontis of A phase the i+ 1 sub-module capacitance c -al-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k al_ n3 to connect in the lower brachium pontis of A phase the nindividual sub-module capacitance c- al_ n with auxiliary capacitor c 2positive pole.Clamp diode, passes through mechanical switch k bu_131st sub-module capacitance in brachium pontis in connection B phase c -bu-_1with auxiliary capacitor c 1negative pole; Pass through mechanical switch k bu_ i3 , k bu_( i+ 1) 3 to connect in B phase in brachium pontis the iindividual sub-module capacitance c- bu-_ i with i+ 1 sub-module capacitance c -bu-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k bu_ n3 , k bl_13to connect in B phase in brachium pontis the nindividual sub-module capacitance c -bu-_ n brachium pontis 1st sub-module capacitance lower to B phase c -bl-_1negative pole; Pass through mechanical switch k bl_ i3 , k bl_( i+ 1) 3 to connect in the lower brachium pontis of B phase the iindividual sub-module capacitance c -bl-_ i with the lower brachium pontis of B phase the i+ 1 sub-module capacitance c -bl-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k bl_ n3 to connect in the lower brachium pontis of B phase the nindividual sub-module capacitance c- bl-_ n with auxiliary capacitor c 2negative pole.The annexation of C phase clamp diode is consistent with A.
From all pressing in subsidiary loop 6 nindividual mechanical switch k au_ i3 , k al_ i3 , k bu_ i3 , k bl_ i3 , k cu_ i3 , k cl_ i3 normally closed, wherein ivalue be 1 ~ n.Brachium pontis first sub-module capacitance in A phase c- au-_1during bypass, now auxiliary IGBT module t 1disconnect, submodule electric capacity c -au-_1with auxiliary capacitor c 1in parallel by clamp diode; Brachium pontis in A phase iindividual sub-module capacitance c -au-_ i during bypass, wherein ivalue be 2 ~ n, submodule electric capacity c- au-_ i with submodule electric capacity c- au-_ i-1 in parallel by clamp diode; Lower brachium pontis first the sub-module capacitance of A phase c- al_1during bypass, submodule electric capacity c- al-_1by clamp diode, two brachium pontis reactors l 0with submodule electric capacity c- au-_ n in parallel; The lower brachium pontis of A phase the iindividual sub-module capacitance c- al_ i during bypass, wherein ivalue be 2 ~ n, submodule electric capacity c -al-_ i with submodule electric capacity c- al_ i-1 in parallel by clamp diode; Auxiliary IGBT module t 2time closed, auxiliary capacitor c 2by clamp diode and submodule electric capacity c -al_ n in parallel.
From all pressing in subsidiary loop 6 nindividual mechanical switch k au_ i3 , k al_ i3 , k bu_ i3 , k bl_ i3 , k cu_ i3 , k cl_ i3 normally closed, wherein ivalue be 1 ~ n.Auxiliary IGBT module t 1time closed, auxiliary capacitor c 1with submodule electric capacity c- bu-_1in parallel by clamp diode; Brachium pontis in B phase iindividual sub-module capacitance c- bu-_ i during bypass, wherein ivalue be 1 ~ n-1, submodule electric capacity c- bu-_ i with submodule electric capacity c- bu-_ i+ 1 in parallel by clamp diode; Brachium pontis in B phase nindividual sub-module capacitance c- bu_ n during bypass, submodule electric capacity c- bu-_ n by clamp diode, two brachium pontis reactors l 0with submodule electric capacity c- bl-_1in parallel; The lower brachium pontis of B phase the iindividual sub-module capacitance c- bl_ i during bypass, wherein ivalue be 1 ~ n-1, submodule electric capacity c- bl-_ i with submodule electric capacity c- bl_ i+ 1 in parallel by clamp diode; The lower brachium pontis of B phase nindividual sub-module capacitance c- bl_ n during bypass, submodule electric capacity c -bl-_ n with auxiliary capacitor c- 2in parallel by clamp diode.
Above-mentioned auxiliary IGBT module t 1triggering signal consistent with " the logic sum " of brachium pontis first submodule triggering signal in A, C phase; Auxiliary IGBT module t 2the lower brachium pontis of triggering signal and B phase the nthe triggering signal of individual submodule is consistent.In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT module t 1, t 2be alternately closed, turn off, between A, B phase upper and lower bridge arm, capacitance voltage is under the effect of clamp diode, meets lower column constraint:
It can thus be appreciated that half-bridge MMC, in the dynamic process completing the conversion of orthogonal stream energy, meets constraints below:
The constraints that C, B the are alternate constraints alternate with A, B is consistent.
Illustrated from above-mentioned, this half-bridge MMC topology possesses submodule capacitor voltage from the ability of equalization.
Finally should be noted that: described embodiment is only some embodiments of the present application, instead of whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the application's protection.

Claims (6)

1. the centralized half-bridge MMC of auxiliary capacitor based on equality constraint all presses topology certainly, it is characterized in that: comprise the half-bridge MMC model be made up of A, B, C three-phase, A, B, C three-phase is respectively by 2 nindividual half-bridge submodule, 2 brachium pontis reactors are in series; Comprise by 6 nindividual mechanical switch, 6 n+ 5 clamp diodes, 2 auxiliary capacitors c 1, c 2, 2 auxiliary IGBT module t 1, t 2what form all presses subsidiary loop certainly.
2. the centralized half-bridge of the auxiliary capacitor based on the equality constraint MMC according to right 1, from all pressing topology, is characterized in that: the 1st submodule of brachium pontis in A phase, its submodule electric capacity c -au-_1negative pole is connected with the 2nd sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with DC bus positive pole; In A phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- au-_ i negative pole downwards with the of brachium pontis in A phase i+ 1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point upwards with of brachium pontis in A phase i-1 sub-module capacitance c- au-_ i-1 negative pole is connected; In A phase brachium pontis nindividual submodule, its submodule electric capacity c -au-_Nnegative pole is downwards through two brachium pontis reactors l 0be connected with the 1st sub-module I GBT module mid point of the lower brachium pontis of A phase, its submodule IGBT module mid point upwards with the of brachium pontis in A phase n-1 sub-module capacitance c -au-_ n-1 negative pole is connected; The of the lower brachium pontis of A phase iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- al-_ i negative pole downwards with the of A phase time brachium pontis i+ 1 sub-module I GBT module mid point is connected, its IGBT module mid point upwards with A phase lower brachium pontis the i-1 sub-module capacitance c -al-_ i-1 negative pole is connected; The of the lower brachium pontis of A phase nindividual submodule, its submodule electric capacity c -al_ n negative pole is connected with DC bus negative pole downwards, its submodule IGBT module mid point upwards with A phase lower brachium pontis the n-1 sub-module capacitance c -al-_ n-1 negative pole is connected; 1st submodule of brachium pontis in B phase, its submodule electric capacity c- bu-_1positive pole is upwards connected with DC bus positive pole, its submodule IGBT module mid point downwards with the 2nd sub-module capacitance of brachium pontis in B phase c- bu-_2positive pole is connected; In B phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- bu-_ i positive pole upwards with of brachium pontis in B phase i-1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point downwards with the of brachium pontis in B phase i+ 1 sub-module capacitance c- bu-_ i+ 1 positive pole is connected; In B phase brachium pontis nindividual submodule, its submodule electric capacity c -bu-_ n positive pole upwards with of brachium pontis in B phase n-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards through two brachium pontis reactors l 0with the 1st sub-module capacitance of the lower brachium pontis of B phase c -bl-_1positive pole is connected; The of the lower brachium pontis of B phase iindividual submodule, wherein ivalue be 2 ~ n-1, its submodule electric capacity c- bl_ i positive pole upwards with B phase lower brachium pontis the i-1 sub-module I GBT module mid point is connected, its submodule IGBT module mid point downwards with the of B phase time brachium pontis i+ 1 sub-module capacitance c- bl-_ i+ 1 positive pole is connected; The of the lower brachium pontis of B phase nindividual submodule, its submodule electric capacity c- bl_ n positive pole is the lower brachium pontis the with B phase upwards n-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is connected with DC bus negative pole downwards; The connected mode of C phase upper and lower bridge arm submodule can be consistent with A, also can be consistent with B; At A, B, C phase upper and lower bridge arm iindividual submodule be parallel with mechanical switch respectively between output line up and down k au_ i1 , k al_ i1 , k bu_ i1 , k bl_ i1 , k cu_ i1 , k cl_ i1 , and thyristor k au_ i2 , k al_ i2 , k bu_ i2 , k bl_ i2 , k cu_ i2 , k cl_ i2 , wherein ivalue be 1 ~ n; A, B, C three-phase status that above-mentioned annexation is formed is consistent, and other topologys after three-phase symmetrized in turn are in interest field.
3. the centralized half-bridge of the auxiliary capacitor based on the equality constraint MMC according to right 1, from all pressing topology, is characterized in that: from all pressing in subsidiary loop, auxiliary capacitor c 1positive pole connects auxiliary IGBT module t 1, negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor c 2negative pole connects auxiliary IGBT module t 2, positive pole connects clamp diode and is incorporated to DC bus negative pole; Clamp diode, passes through mechanical switch k au_131st sub-module capacitance in brachium pontis in connection A phase c- au-_1with auxiliary capacitor c 1positive pole; Pass through mechanical switch k au_ i3 , k au_( i+ 1) 3 to connect in A phase in brachium pontis the iindividual sub-module capacitance c- au-_ i with i+ 1 sub-module capacitance c- au-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k au_ n3 , k al_13to connect in A phase in brachium pontis the nindividual sub-module capacitance c -au-_ n brachium pontis 1st sub-module capacitance lower to A phase c- al-_1positive pole; Pass through mechanical switch k al_ i3 , k al_( i+ 1) 3 to connect in the lower brachium pontis of A phase the iindividual sub-module capacitance c -al-_ i with the lower brachium pontis of A phase the i+ 1 sub-module capacitance c -al-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k al_ n3 to connect in the lower brachium pontis of A phase the nindividual sub-module capacitance c- al_ n with auxiliary capacitor c 2positive pole; Clamp diode, passes through mechanical switch k bu_131st sub-module capacitance in brachium pontis in connection B phase c -bu-_1with auxiliary capacitor c 1negative pole; Pass through mechanical switch k bu_ i3 , k bu_( i+ 1) 3 to connect in B phase in brachium pontis the iindividual sub-module capacitance c- bu-_ i with i+ 1 sub-module capacitance c -bu-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k bu_ n3 , k bl_13to connect in B phase in brachium pontis the nindividual sub-module capacitance c -bu-_ n brachium pontis 1st sub-module capacitance lower to B phase c -bl-_1negative pole; Pass through mechanical switch k bl_ i3 , k bl_( i+ 1) 3 to connect in the lower brachium pontis of B phase the iindividual sub-module capacitance c -bl-_ i with the lower brachium pontis of B phase the i+ 1 sub-module capacitance c -bl-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through mechanical switch k bl_ n3 to connect in the lower brachium pontis of B phase the nindividual sub-module capacitance c- bl-_ n with auxiliary capacitor c 2negative pole; The annexation of C phase clamp diode is corresponding with the annexation of its submodule; In above-mentioned A, B, C three-phase 6 nindividual mechanical switch k au_ i3 , k al_ i3 , k bu_ i3 , k bl_ i3 , k cu_ i3 , k cl_ i3 , wherein ivalue be 1 ~ n, 6 n+ 5 clamp diodes, 2 auxiliary capacitors c 1, c 2, and 2 auxiliary IGBT module t 1, t 2, common formation is from all pressing subsidiary loop.
4. the centralized half-bridge MMC of the auxiliary capacitor based on equality constraint according to right 1 is from all pressing topology, it is characterized in that: from all pressing in subsidiary loop 6 NIndividual mechanical switch K Au_ i3 , K Al_ i3 , K Bu_ i3 , K Bl_ i3 , K Cu_ i3 , K Cl_ i3 Normally closed, wherein iValue be 1 ~ N, brachium pontis first sub-module capacitance in A phase C- Au-_1During bypass, now auxiliary IGBT module T 1Disconnect submodule electric capacity C- Au-_1With auxiliary capacitor C 1By clamp diode parallel connection; Brachium pontis in A phase iIndividual sub-module capacitance C- Au-_ i During bypass, wherein iValue be 2 ~ N,Submodule electric capacity C- Au-_ i With submodule electric capacity C- Au-_ i-1 By clamp diode parallel connection; Lower brachium pontis first the sub-module capacitance of A phase C -al_1During bypass, submodule electric capacity C- Al-_1By clamp diode, two brachium pontis reactors L 0With submodule electric capacity C- Au-_ N In parallel; The lower brachium pontis of A phase the iIndividual sub-module capacitance C -al_ i During bypass, wherein iValue be 2 ~ N, submodule electric capacity C- Al-_ i With submodule electric capacity C- Al_ i-1 By clamp diode parallel connection; Auxiliary IGBT module T 2When closed, auxiliary capacitor C 2By clamp diode and submodule electric capacity C -al_ N In parallel;Auxiliary IGBT module T 1When closed, auxiliary capacitor C 1With submodule electric capacity C- Bu-_1By clamp diode parallel connection; Brachium pontis in B phase iIndividual sub-module capacitance C- Bu-_ i During bypass, wherein iValue be 1 ~ N-1, submodule electric capacity C- Bu-_ i With submodule electric capacity C- Bu-_ i+ 1 By clamp diode parallel connection; Brachium pontis in B phase NIndividual sub-module capacitance C- Bu_ N During bypass, submodule electric capacity C- Bu-_ N By clamp diode, two brachium pontis reactors L 0With submodule electric capacity C- Bl-_1In parallel; The lower brachium pontis of B phase the iIndividual sub-module capacitance C- Bl_ i During bypass, wherein iValue be 1 ~ N-1,Submodule electric capacity C- Bl-_ i With submodule electric capacity C- Bl_ i+ 1 By clamp diode parallel connection; The lower brachium pontis of B phase NIndividual sub-module capacitance C- Bl_ N During bypass, submodule electric capacity C -bl-_ N With auxiliary capacitor C- 2By clamp diode parallel connection; Wherein auxiliary IGBT module T 1" logic and " of triggering signal and brachium pontis in A, C phase first submodule triggering signal consistent; Auxiliary IGBT module T 2The lower brachium pontis of triggering signal and B phase the NThe triggering signal of individual submodule is consistent; In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT module T 1, T 2Be alternately closed, turn off, A phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, U C1 >= U C-au_1 >= U C-au_2 >= U C-au_ N >= U C-al_1 >= U C-al_2 >= U C-al_ N >= U C2 ; B phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, U C1 ≤ U C-bu_1 ≤ U C-bu_2 ≤ U C-bu_ N ≤ U C-bl_1 ≤ U C-bl_2 ≤ U C-bl_ N ≤ U C2 ; The centralized half-bridge MMC of auxiliary capacitor based on equality constraint is topological from all pressing, in dynamic process, and auxiliary capacitor C 1Both can be used as the electric capacity that A phase voltage is the highest, can be used as again the electric capacity that B phase voltage is minimum; Auxiliary capacitor C 2Both can be used as the electric capacity that A phase voltage is minimum, can be used as again the electric capacity that B phase voltage is the highest; Against two equality constraints, max( U CA- )=min( U Cb -), min( U Ca )=max( U Cb ), in A, B phase upper and lower bridge arm 4 NIndividual sub-module capacitance, C Au_ i , C Al_ i , C Bu_ i , C Bl_ i , wherein iValue is 1 ~ N, and auxiliary capacitor C 1, C 2, voltage be in self-balancing state, topological A, B are alternate possesses submodule capacitor voltage from the ability of equalization; If the form of the composition of C phase is consistent with A in topology, then between constraints and A, B of C, B capacitive coupling voltage, capacitance voltage constraints is consistent; If the form of the composition of C phase is consistent with B in topology, then between constraints and A, B of A, C capacitive coupling voltage, capacitance voltage constraints is consistent, and topology possesses submodule capacitor voltage from the ability of equalization; On the basis that utilizes the single-phase flowing of capacitive energy between adjacent submodule in clamp diode realization mutually, rely on the equality constraint max(between auxiliary capacitor voltage U CA- )=min( U Cb -), min( U Ca )=max( U Cb ), or max( U CA- )=min( U Cc ), min( U Ca )=max( U Cc ), or max( U Cc )=min( U Cb -), min( U Cc )=max( U Cb ), the alternate flowing that realizes capacitive energy forms the peripheral passage of capacitive energy, and then keeps alternate submodule capacitor voltage stable, is the protection content of this right.
5. the centralized half-bridge of the auxiliary capacitor based on the equality constraint MMC according to right 1, from all pressing topology, is characterized in that: auxiliary capacitor c 1, c 2both as the passage of A, B capacitive coupling energy exchange, again as the passage of B, C capacitive coupling energy exchange; Function focus utilization in topology of auxiliary capacitor all presses the device consumption in subsidiary loop certainly with minimizing; Auxiliary capacitor c 1function concentrate, auxiliary capacitor c 2function do not concentrate; Auxiliary capacitor c 1function do not concentrate, auxiliary capacitor c 2function concentrate topology in interest field.
6. the centralized half-bridge of the auxiliary capacitor based on the equality constraint MMC according to right 1 is from all pressing topology, it is characterized in that: the centralized half-bridge MMC of the auxiliary capacitor based on equality constraint is from all pressing topology, flexible direct-current transmission field can not only be directly applied to as multi-level voltage source current converter, also by forming STATCOM (STATCOM), Research on Unified Power Quality Conditioner (UPQC), the application of installations such as THE UPFC (UPFC) are in flexible AC transmission field; Other application scenarios of this invention topology of indirect utilization and thought are in interest field.
CN201610047406.4A 2016-01-25 2016-01-25 Auxiliary capacitor centralized half-bridge MMC automatic voltage-equalizing topology based on equality constraint Pending CN105471302A (en)

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