CN105024532A - Single-phase three-level inverter and three-phase three-level inverter - Google Patents
Single-phase three-level inverter and three-phase three-level inverter Download PDFInfo
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- CN105024532A CN105024532A CN201410153303.7A CN201410153303A CN105024532A CN 105024532 A CN105024532 A CN 105024532A CN 201410153303 A CN201410153303 A CN 201410153303A CN 105024532 A CN105024532 A CN 105024532A
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Abstract
A single-phase three-level inverter capable of restraining a voltage spike and a three-phase three-level inverter are disclosed. The single-phase three-level inverter comprises a single-phase three-level inversion circuit, a first resistor unit, a second resistor unit, a first capacitor unit, a second capacitor unit, a first switch tube unit and a second switch tube unit. One end of the first resistor unit is connected to a positive direct current bus of the inversion circuit and the other end is connected to one end of the first capacitor unit and a first end of the first switch tube unit. The other end of the first capacitor unit is connected to a connection point between two direct current bus capacitors. A second end of the first switch tube unit is connected to a bridge arm middle point of the inversion circuit. One end of the second resistor unit is connected to a negative direct current bus of the inversion circuit, and the other end is connected to one end of the second capacitor unit and a second end of the second switch tube unit. The other end of the second capacitor unit is connected to the connection point of the two direct current bus capacitors. A first end of the second switch tube unit is connected to the bridge arm middle point of the inversion circuit.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly relate to a kind of single-phase three-level inverter and three-phase tri-level inverter.
Background technology
Three-level inverter circuit is widely used by industry because of advantages such as its voltage withstand class are high, voltage and current aberration rate is low, and the three-level inverter circuit the most often used at present has neutral-point-clamped type three-level inverter circuit, T-shaped three-level inverter circuit etc.
Neutral-point-clamped type three-level inverter circuit comprises multiple, and the single-phase diode clamper type three-level inverter circuit shown in Fig. 1 is wherein a kind of.T-shaped three-level inverter circuit is derived by diode clamp type three-level inverter circuit, and when low switching frequency, T-shaped three-level inverter circuit efficiency is better than diode clamp type three-level inverter circuit.Traditional single-phase T-shaped three-level inverter circuit as shown in Figure 2, the IGBT(Insulated Gate Bipolar Transistor that tie point between two dc-link capacitance C1 with C2 is connected by two collector electrodes or emitter is connected, insulated gate bipolar transistor) be connected to the mid point of brachium pontis.Traditional T-shaped three-level inverter circuit basis is improved further, tie point between two dc-link capacitance C1 and C2 is by two antiparallel RB-IGBT(Reverse Blocking Insulated GateBipolar Transistor, reverse block-type insulated gate bipolar transistor) be connected to the mid point of brachium pontis, due to the process structure characteristic of RB-IGBT, its loss is lower, is the single-phase T-shaped three-level inverter circuit of the improvement adopting RB-IGBT shown in Fig. 3.
But, no matter which kind of three-level inverter circuit, all need during work the switching device in control circuit repeatedly conducting turn off.Due to reasons such as wirings, in circuit, between each device, there is stray inductance, switching device shutdown moment in circuit, because the existence of stray inductance, switching device two ends can produce higher due to voltage spikes, probably can damage this switching device, reduce the reliability of circuit.
Summary of the invention
The embodiment of the present invention provides a kind of single-phase three-level inverter and three-phase tri-level inverter, can suppress the due to voltage spikes of switching device.
The embodiment of the present invention provides a kind of single-phase three-level inverter, comprises single-phase three-level inverter circuit, the first resistance unit, the second resistance unit, the first capacitor cell, the second capacitor cell, the first switching tube unit and second switch pipe unit, wherein:
One end of first resistance unit is connected to the positive direct-current bus of single-phase three-level inverter circuit, and the other end is connected with one end of the first capacitor cell, the first end of the first switching tube unit; The other end of the first capacitor cell is connected to the tie point between two dc-link capacitances of single-phase three-level inverter circuit; Second end of the first switching tube unit is connected to the mid point of the brachium pontis of single-phase three-level inverter circuit;
One end of second resistance unit is connected to the negative DC bus of single-phase three-level inverter circuit, and the other end is connected with one end of the second capacitor cell, the second end of second switch pipe unit; The other end of the second capacitor cell is connected to the tie point between two dc-link capacitances of single-phase three-level inverter circuit; The first end of second switch pipe unit is connected to the mid point of the brachium pontis of single-phase three-level inverter circuit.
The embodiment of the present invention provides a kind of three-phase tri-level inverter, comprise three-phase tri-level inverter circuit, three the first resistance units, three the second resistance units, three the first capacitor cells, three the second capacitor cells, three the first switching tube unit and three second switch pipe units, wherein:
One end of each first resistance unit is all connected to the positive direct-current bus of three-phase tri-level inverter circuit, and the other end of each first resistance unit is connected with the first end of one end of first capacitor cell, a first switching tube unit; The other end of each first capacitor cell is all connected to the tie point between two dc-link capacitances of three-phase tri-level inverter circuit; Second end of each first switching tube unit is connected to the mid point of a brachium pontis of three-phase tri-level inverter circuit;
One end of each second resistance unit is all connected to the negative DC bus of three-phase tri-level inverter circuit, and the other end of each second resistance unit is connected with one end of second capacitor cell, the second end of a second switch pipe unit; The other end of each second capacitor cell is all connected to the tie point between two dc-link capacitances of three-phase tri-level inverter circuit; The first end of each second switch pipe unit is connected to the mid point of a brachium pontis of three-phase tri-level inverter circuit.
Beneficial effect of the present invention comprises:
The three-level inverter that the embodiment of the present invention provides, the basis of three-level inverter circuit increases resistance unit, capacitor cell and switching tube unit, the charge circuit of capacitor cell can be formed when the switching device in three-level inverter circuit turns off, peak voltage is absorbed by capacitor cell, reduce the loss of switching device, thus improve the reliability of circuit.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, is not construed as limiting the invention with the embodiment of the present invention one.In the accompanying drawings:
Fig. 1 is the structural representation of single-phase diode clamper type inverter circuit of the prior art;
Fig. 2 is the structural representation of traditional single-phase T-shaped three-level inverter circuit of the prior art;
Fig. 3 is the structural representation of the single-phase T-shaped three-level inverter circuit of employing RB-IGBT of the prior art;
The structural representation of the single-phase three-level inverter that Fig. 4 provides for the embodiment of the present invention;
The structural representation of the single-phase three-level inverter that Fig. 5 provides for the embodiment of the present invention 1;
The structural representation of the three-phase tri-level inverter that Fig. 6 provides for the embodiment of the present invention 1;
The structural representation of the single-phase three-level inverter that Fig. 7 provides for the embodiment of the present invention 2;
The structural representation of the three-phase tri-level inverter that Fig. 8 provides for the embodiment of the present invention 2;
The structural representation of the single-phase three-level inverter that Fig. 9 provides for the embodiment of the present invention 3;
The structural representation of the three-phase tri-level inverter that Figure 10 provides for the embodiment of the present invention 3.
Embodiment
In order to provide the implementation suppressing due to voltage spikes, embodiments provide a kind of single-phase three-level inverter and three-phase tri-level inverter, below in conjunction with Figure of description, the preferred embodiments of the present invention are described, be to be understood that, preferred embodiment described herein, only for instruction and explanation of the present invention, is not intended to limit the present invention.And when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
Embodiments provide a kind of single-phase three-level inverter, comprise single-phase three-level inverter circuit, the first resistance unit, the second resistance unit, the first capacitor cell, the second capacitor cell, the first switching tube unit and second switch pipe unit, wherein:
One end of first resistance unit is connected to the positive direct-current bus of single-phase three-level inverter circuit, and the other end is connected with one end of the first capacitor cell, the first end of the first switching tube unit; The other end of the first capacitor cell is connected to the tie point between two dc-link capacitances of single-phase three-level inverter circuit; Second end of the first switching tube unit is connected to the mid point of the brachium pontis of single-phase three-level inverter circuit;
One end of second resistance unit is connected to the negative DC bus of single-phase three-level inverter circuit, and the other end is connected with one end of the second capacitor cell, the second end of second switch pipe unit; The other end of the second capacitor cell is connected to the tie point between two dc-link capacitances of single-phase three-level inverter circuit; The first end of second switch pipe unit is connected to the mid point of the brachium pontis of single-phase three-level inverter circuit.
Above-mentioned single-phase three-level inverter can be single-phase neutral-point-clamped type three-level inverter circuit, as single-phase diode clamper type three-level inverter circuit etc.; Above-mentioned single-phase three-level inverter also can be single-phase T-shaped three-level inverter circuit, as traditional single-phase T-shaped three-level inverter circuit, the single-phase T-shaped three-level inverter circuit etc. adopting RB-IGBT.
To adopt the single-phase T-shaped three-level inverter circuit of RB-IGBT, the single-phase three-level inverter that the embodiment of the present invention provides as shown in Figure 4.
Wherein, the first resistance unit and the second resistance unit can be different resistance units, and the first capacitor cell and the second capacitor cell can be different capacitor cells, and the first switching tube unit and second switch pipe unit can be different switching tube unit; Preferably, in order to ensure the symmetry of circuit, first resistance unit and the second resistance unit are identical resistance unit, and the first capacitor cell and the second capacitor cell are identical capacitor cell, and the first switching tube unit and second switch pipe unit are identical switching tube unit.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of three-phase tri-level inverter, comprise three-phase tri-level inverter circuit, three the first resistance units, three the second resistance units, three the first capacitor cells, three the second capacitor cells, three the first switching tube unit and three second switch pipe units, wherein:
One end of each first resistance unit is all connected to the positive direct-current bus of three-phase tri-level inverter circuit, and the other end of each first resistance unit is connected with the first end of one end of first capacitor cell, a first switching tube unit; The other end of each first capacitor cell is all connected to the tie point between two dc-link capacitances of three-phase tri-level inverter circuit; Second end of each first switching tube unit is connected to the mid point of a brachium pontis of three-phase tri-level inverter circuit;
One end of each second resistance unit is all connected to the negative DC bus of three-phase tri-level inverter circuit, and the other end of each second resistance unit is connected with one end of second capacitor cell, the second end of a second switch pipe unit; The other end of each second capacitor cell is all connected to the tie point between two dc-link capacitances of three-phase tri-level inverter circuit; The first end of each second switch pipe unit is connected to the mid point of a brachium pontis of three-phase tri-level inverter circuit.
Above-mentioned three-phase tri-level inverter can be three-phase neutral-point-clamped type three-level inverter circuit, as three-phase diode clamper type three-level inverter circuit etc.; Above-mentioned three-phase tri-level inverter also can be the T-shaped three-level inverter circuit of three-phase, the T-shaped three-level inverter circuit of three-phase etc. of the T-shaped three-level inverter circuit of the three-phase as traditional, employing RB-IGBT.
Wherein, three the first resistance units and three the second resistance units can be six different resistance units, three the first capacitor cells and three the second capacitor cells can be six different capacitor cells, and three the first switching tube unit and three second switch pipe units can be six different switching tube unit; Preferably, three the first resistance units and three the second resistance units are six identical resistance units, three the first capacitor cells and three the second capacitor cells are six identical capacitor cells, and three the first switching tube unit and three second switch pipe units are six identical switching tube unit.
Further, in the single-phase three-level inverter that the embodiment of the present invention provides and three-phase tri-level inverter, the first resistance unit and the second resistance unit are specifically as follows multiple resistance of a resistance or series connection or multiple resistance of parallel connection or series-parallel multiple resistance.
Further, in the single-phase three-level inverter that the embodiment of the present invention provides and three-phase tri-level inverter, the first capacitor cell and the second capacitor cell are specifically as follows multiple electric capacity of an electric capacity or series connection or multiple electric capacity of parallel connection or series-parallel multiple electric capacity.
Further, in the single-phase three-level inverter that the embodiment of the present invention provides and three-phase tri-level inverter, the first switching tube unit and second switch pipe unit are specifically as follows multiple switching tube of a switching tube or series connection or multiple switching tube of parallel connection or series-parallel multiple switching tube.One end that when first end of the first switching tube unit is the first switching tube cell conduction, electric current exports, one end of electric current input when the second end of the first switching tube unit is the first switching tube cell conduction; One end that when first end of second switch pipe unit is the conducting of second switch pipe unit, electric current exports, one end of electric current input when the second end of second switch pipe unit is the conducting of second switch pipe unit.
Preferably, the switching tube forming the first switching tube unit and second switch pipe unit is specially diode; The first end of the first switching tube unit and the first end of second switch pipe unit are specially one end corresponding to the negative electrode of diode, and the second end of the first switching tube unit and the second end of second switch pipe unit are specially one end corresponding to the anode of diode.
Preferably, above-mentioned diode is specifically as follows fast recovery diode.
In actual applications, when carrying out type selecting to diode, the diode selecting Reverse recovery faster is better.
Above-mentioned diode is only an example, is not intended to limit the present invention.In other embodiments of the invention, the first switching tube unit and second switch pipe unit also can be made up of other device for power switching, as IGBT, metal-oxide-semiconductor etc.
Below in conjunction with accompanying drawing, with specific embodiment, above-mentioned single-phase three-level inverter and three-phase tri-level inverter are described in detail.
Embodiment 1:
The single-phase three-level inverter that the embodiment of the present invention 1 provides as shown in Figure 5, specifically comprises the single-phase T-shaped three-level inverter circuit adopting RB-IGBT, two resistance Rs1 and Rs2, two electric capacity Cs1 and Cs2, two diode Ds1 and Ds2, wherein:
One end of resistance Rs1 is connected to the positive direct-current bus of the single-phase T-shaped three-level inverter circuit adopting RB-IGBT, and the other end is connected with one end of electric capacity Cs1, the negative electrode of diode Ds1; The other end of electric capacity Cs1 is connected to the tie point between two dc-link capacitance C1 and C2 of the single-phase T-shaped three-level inverter circuit adopting RB-IGBT; The anode of diode Ds1 is connected to the mid point of the brachium pontis of the single-phase T-shaped three-level inverter circuit adopting RB-IGBT;
One end of resistance Rs2 is connected to the negative DC bus of the single-phase T-shaped three-level inverter circuit adopting RB-IGBT, and the other end is connected with one end of electric capacity Cs2, the anode of diode Ds2; The other end of electric capacity Cs2 is connected to the tie point between two dc-link capacitance C1 and C2 of the single-phase T-shaped three-level inverter circuit adopting RB-IGBT; The negative electrode of diode Ds2 is connected to the mid point of the brachium pontis of the single-phase T-shaped three-level inverter circuit adopting RB-IGBT.
In single-phase three-level inverter shown in Fig. 5, IGBT T1 shutdown moment in brachium pontis, the peak voltage at IGBT T1 two ends can be that electric capacity Cs1 charges by the RB-IGBT T2 of resistance Rs1, electric capacity Cs1, conducting, and namely electric capacity Cs1 can absorb the peak voltage produced when IGBT T1 turns off;
At RB-IGBT T2 shutdown moment, the peak voltage at RB-IGBT T2 two ends can be that electric capacity Cs2 charges by the diode Ds2 of electric capacity Cs2, conducting, and namely electric capacity Cs2 can absorb the peak voltage produced when RB-IGBT T2 turns off;
At RB-IGBT T3 shutdown moment, the peak voltage at RB-IGBT T3 two ends can be that electric capacity Cs1 charges by the diode Ds1 of conducting, and namely electric capacity Cs1 can absorb the peak voltage produced when RB-IGBT T3 turns off;
IGBT T4 shutdown moment in brachium pontis, the peak voltage at IGBT T4 two ends can be that electric capacity Cs2 charges by the RB-IGBT T3 of conducting, electric capacity Cs2, resistance Rs2, and namely electric capacity Cs2 can absorb the peak voltage produced when IGBTT4 turns off.
Switching device closes has no progeny, and electric capacity Cs1 and Cs2 can be discharged by resistance Rs1 and Rs2.
The three-phase tri-level inverter corresponding with the single-phase three-level inverter shown in Fig. 5 as shown in Figure 6, comprises the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT, six resistance, six electric capacity and six diodes, wherein:
One end of three resistance in six resistance is all connected to the positive direct-current bus of the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT, and the other end of each resistance in these three resistance is connected with one end of an electric capacity, the negative electrode of a diode; The other end of three electric capacity be connected with these three resistance respectively is all connected to the tie point between two dc-link capacitances of the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT; The anode of each diode in three diodes be connected with these three resistance is respectively connected to the mid point of a brachium pontis of the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT;
One end of other three resistance in six resistance is all connected to the negative DC bus of the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT, and the other end of each resistance in these three resistance is connected with one end of an electric capacity, the anode of a diode; The other end of three electric capacity be connected with these three resistance respectively is all connected to the tie point between two dc-link capacitances of the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT; The negative electrode of each diode in three diodes be connected with these three resistance is respectively connected to the mid point of a brachium pontis of the T-shaped three-level inverter circuit of three-phase adopting RB-IGBT.
The due to voltage spikes of the three-phase tri-level inverter shown in Fig. 6 suppresses principle identical with the single-phase three-level inverter shown in Fig. 5, does not repeat them here.
State in the three-level inverter that embodiment 1 provides on the invention, what adopt is the T-shaped three-level inverter circuit adopting RB-IGBT, in other embodiments of the present invention, three-level inverter also can adopt the T-shaped three-level inverter circuit of other form, such as following embodiment 2.
Embodiment 2:
As shown in Figure 7, specifically comprise traditional single-phase T-shaped three-level inverter circuit, two resistance Rs1 and Rs2, two electric capacity Cs1 and Cs2, two diode Ds1 and Ds2, anatomical connectivity no longer describes in detail the single-phase three-level inverter that the embodiment of the present invention 2 provides.
In single-phase three-level inverter shown in Fig. 7, IGBT T1 shutdown moment in brachium pontis, the peak voltage at IGBT T1 two ends can be that electric capacity Cs1 charges by the IGBT T2 of the body diode in resistance Rs1, electric capacity Cs1, IGBT T3, conducting, and namely electric capacity Cs1 can absorb the peak voltage produced when IGBT T1 turns off;
At IGBT T2 shutdown moment, the peak voltage at IGBT T2 two ends can be that electric capacity Cs2 charges by the diode Ds2 of the IGBT T3 of conducting, electric capacity Cs2, conducting, and namely electric capacity Cs2 can absorb the peak voltage produced when IGBT T2 turns off;
At IGBT T3 shutdown moment, the peak voltage at IGBT T3 two ends can be that electric capacity Cs1 charges by the diode Ds1 of the IGBT T2 of conducting, conducting, and namely electric capacity Cs1 can absorb the peak voltage produced when IGBT T3 turns off;
IGBT T4 shutdown moment in brachium pontis, the peak voltage at IGBT T4 two ends can be that electric capacity Cs2 charges by the RB-IGBT T3 of the body diode in IGBTT2, conducting, electric capacity Cs2, resistance Rs2, and namely electric capacity Cs2 can absorb the peak voltage produced when IGBT T4 turns off.
Switching device closes has no progeny, and electric capacity Cs1 and Cs2 can be discharged by resistance Rs1 and Rs2.
The three-phase tri-level inverter corresponding with the single-phase three-level inverter shown in Fig. 7 as shown in Figure 8, comprise the T-shaped three-level inverter circuit of traditional three-phase, six resistance, six electric capacity and six diodes, its due to voltage spikes suppresses principle identical with the single-phase three-level inverter shown in Fig. 7.
State in the three-level inverter that embodiment 1 and embodiment 2 provide on the invention, what adopt is all T-shaped three-level inverter circuit, in other embodiments of the present invention, three-level inverter also can adopt the three-level inverter circuit of other form, as neutral-point-clamped type three-level inverter circuit.
Embodiment 3:
As shown in Figure 9, specifically comprise single-phase diode clamper type three-level inverter circuit, two resistance Rs1 and Rs2, two electric capacity Cs1 and Cs2, two diode Ds1 and Ds2, anatomical connectivity no longer describes in detail the single-phase three-level inverter that the embodiment of the present invention 3 provides.
In single-phase three-level inverter shown in Fig. 9, IGBT T1 shutdown moment in brachium pontis, the peak voltage at IGBT T1 two ends can be that electric capacity Cs1 charges by the diode D1 of resistance Rs1, electric capacity Cs1, conducting, and namely electric capacity Cs1 can absorb the peak voltage produced when IGBT T1 turns off;
IGBT T2 shutdown moment in brachium pontis, due to the dynamic characteristic of diode, the diode D1 of conducting can not turn off immediately, the peak voltage at IGBT T2 two ends can be that electric capacity Cs2 charges by the diode Ds2 of diode D1, electric capacity Cs2, conducting, and namely electric capacity Cs2 can absorb the peak voltage produced when IGBT T2 turns off;
IGBT T3 shutdown moment in brachium pontis, due to the dynamic characteristic of diode, the diode D2 of conducting can not turn off immediately, the peak voltage at IGBT T3 two ends can be that electric capacity Cs1 charges by the diode Ds1 of conducting, electric capacity Cs1, diode D2, and namely electric capacity Cs1 can absorb the peak voltage produced when IGBT T3 turns off;
IGBT T4 shutdown moment in brachium pontis, the peak voltage at IGBT T4 two ends can be that electric capacity Cs2 charges by the diode D2 of conducting, electric capacity Cs2, resistance Rs2, and namely electric capacity Cs2 can absorb the peak voltage produced when IGBTT4 turns off.
Switching device closes has no progeny, and electric capacity Cs1 and Cs2 can be discharged by resistance Rs1 and Rs2.
The three-phase tri-level inverter corresponding with the single-phase three-level inverter shown in Fig. 9 as shown in Figure 10, comprise three-phase diode clamper type three-level inverter circuit, six resistance, six electric capacity and six diodes, its due to voltage spikes suppresses principle identical with the single-phase three-level inverter shown in Fig. 9.
In sum, have employed single-phase three-level inverter and three-phase tri-level inverter that the embodiment of the present invention provides, when switching device turns off, the due to voltage spikes that switching device two ends produce can be suppressed, reduce the loss of switching device, thus the reliability of raising circuit.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a single-phase three-level inverter, is characterized in that, comprises single-phase three-level inverter circuit, the first resistance unit, the second resistance unit, the first capacitor cell, the second capacitor cell, the first switching tube unit and second switch pipe unit, wherein:
One end of first resistance unit is connected to the positive direct-current bus of single-phase three-level inverter circuit, and the other end is connected with one end of the first capacitor cell, the first end of the first switching tube unit; The other end of the first capacitor cell is connected to the tie point between two dc-link capacitances of single-phase three-level inverter circuit; Second end of the first switching tube unit is connected to the mid point of the brachium pontis of single-phase three-level inverter circuit;
One end of second resistance unit is connected to the negative DC bus of single-phase three-level inverter circuit, and the other end is connected with one end of the second capacitor cell, the second end of second switch pipe unit; The other end of the second capacitor cell is connected to the tie point between two dc-link capacitances of single-phase three-level inverter circuit; The first end of second switch pipe unit is connected to the mid point of the brachium pontis of single-phase three-level inverter circuit.
2. single-phase three-level inverter as claimed in claim 1, is characterized in that, the first resistance unit is specially multiple resistance of a resistance or multiple resistance of connecting or parallel connection or series-parallel multiple resistance; Second resistance unit is specially multiple resistance of a resistance or multiple resistance of connecting or parallel connection or series-parallel multiple resistance;
First capacitor cell is specially multiple electric capacity of an electric capacity or multiple electric capacity of connecting or parallel connection or series-parallel multiple electric capacity; Second capacitor cell is specially multiple electric capacity of an electric capacity or multiple electric capacity of connecting or parallel connection or series-parallel multiple electric capacity;
First switching tube unit is specially multiple switching tube of a switching tube or multiple switching tube of connecting or parallel connection or series-parallel multiple switching tube; Second switch pipe unit is specially multiple switching tube of a switching tube or multiple switching tube of connecting or parallel connection or series-parallel multiple switching tube.
3. single-phase three-level inverter as claimed in claim 2, it is characterized in that, described switching tube is specially diode;
The first end of the first switching tube unit is specially one end corresponding to the negative electrode of diode, and the second end of the first switching tube unit is specially one end corresponding to the anode of diode;
The first end of second switch pipe unit is specially one end corresponding to the negative electrode of diode, and the second end of second switch pipe unit is specially one end corresponding to the anode of diode.
4. the single-phase three-level inverter as described in as arbitrary in claim 1-3, it is characterized in that, described single-phase three-level inverter circuit is specially single-phase T-shaped three-level inverter circuit.
5. single-phase three-level inverter as claimed in claim 4, is characterized in that, described single-phase T-shaped three-level inverter circuit is specially the single-phase T-shaped three-level inverter circuit adopting reverse block-type insulated gate bipolar transistor RB-IGBT.
6. a three-phase tri-level inverter, it is characterized in that, comprise three-phase tri-level inverter circuit, three the first resistance units, three the second resistance units, three the first capacitor cells, three the second capacitor cells, three the first switching tube unit and three second switch pipe units, wherein:
One end of each first resistance unit is all connected to the positive direct-current bus of three-phase tri-level inverter circuit, and the other end of each first resistance unit is connected with the first end of one end of first capacitor cell, a first switching tube unit; The other end of each first capacitor cell is all connected to the tie point between two dc-link capacitances of three-phase tri-level inverter circuit; Second end of each first switching tube unit is connected to the mid point of a brachium pontis of three-phase tri-level inverter circuit;
One end of each second resistance unit is all connected to the negative DC bus of three-phase tri-level inverter circuit, and the other end of each second resistance unit is connected with one end of second capacitor cell, the second end of a second switch pipe unit; The other end of each second capacitor cell is all connected to the tie point between two dc-link capacitances of three-phase tri-level inverter circuit; The first end of each second switch pipe unit is connected to the mid point of a brachium pontis of three-phase tri-level inverter circuit.
7. three-phase tri-level inverter as claimed in claim 6, is characterized in that, the first resistance unit is specially multiple resistance of a resistance or multiple resistance of connecting or parallel connection or series-parallel multiple resistance; Second resistance unit is specially multiple resistance of a resistance or multiple resistance of connecting or parallel connection or series-parallel multiple resistance;
First capacitor cell is specially multiple electric capacity of an electric capacity or multiple electric capacity of connecting or parallel connection or series-parallel multiple electric capacity; Second capacitor cell is specially multiple electric capacity of an electric capacity or multiple electric capacity of connecting or parallel connection or series-parallel multiple electric capacity;
First switching tube unit is specially multiple switching tube of a switching tube or multiple switching tube of connecting or parallel connection or series-parallel multiple switching tube; Second switch pipe unit is specially multiple switching tube of a switching tube or multiple switching tube of connecting or parallel connection or series-parallel multiple switching tube.
8. three-phase tri-level inverter as claimed in claim 7, it is characterized in that, described switching tube is specially diode;
The first end of the first switching tube unit is specially one end corresponding to the negative electrode of diode, and the second end of the first switching tube unit is specially one end corresponding to the anode of diode;
The first end of second switch pipe unit is specially one end corresponding to the negative electrode of diode, and the second end of second switch pipe unit is specially one end corresponding to the anode of diode.
9. the three-phase tri-level inverter as described in as arbitrary in claim 6-8, it is characterized in that, described three-phase tri-level inverter circuit is specially the T-shaped three-level inverter circuit of three-phase.
10. three-phase tri-level inverter as claimed in claim 9, is characterized in that, the T-shaped three-level inverter circuit of described three-phase is specially the T-shaped three-level inverter circuit of three-phase adopting reverse block-type insulated gate bipolar transistor RB-IGBT.
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| CN (1) | CN105024532A (en) |
Cited By (11)
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| CN105099151A (en) * | 2014-04-18 | 2015-11-25 | 台达电子企业管理（上海）有限公司 | Converter |
| CN105827128A (en) * | 2016-05-11 | 2016-08-03 | 武汉衡伟信息技术有限公司 | Frequency converter |
| WO2017107332A1 (en) * | 2015-12-25 | 2017-06-29 | 成都麦隆电气有限公司 | Npc three-level inner tube lossless voltage-sharing clamp circuit |
| CN108964508A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit |
| CN108964505A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit and converting means |
| CN108964507A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit |
| CN108964489A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit and converting means |
| CN108964490A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit and converting means |
| CN108988668A (en) * | 2018-08-16 | 2018-12-11 | 厦门科华恒盛股份有限公司 | A kind of T-type rectification circuit and corresponding rectified three-phase circuit |
| CN109245509A (en) * | 2018-11-05 | 2019-01-18 | 宁波市北仑临宇电子科技有限公司 | The lossless asynchronous absorption circuit of peak voltage and NPC tri-level circuit |
| CN113162449A (en) * | 2021-05-07 | 2021-07-23 | 科华数据股份有限公司 | Three-level inverter circuit and converter |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105099151A (en) * | 2014-04-18 | 2015-11-25 | 台达电子企业管理（上海）有限公司 | Converter |
| WO2017107332A1 (en) * | 2015-12-25 | 2017-06-29 | 成都麦隆电气有限公司 | Npc three-level inner tube lossless voltage-sharing clamp circuit |
| CN105827128A (en) * | 2016-05-11 | 2016-08-03 | 武汉衡伟信息技术有限公司 | Frequency converter |
| CN108964489B (en) * | 2017-05-19 | 2020-08-28 | 科华恒盛股份有限公司 | T-shaped conversion circuit and corresponding three-phase conversion circuit and conversion device |
| CN108964505A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit and converting means |
| CN108964507A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit |
| CN108964489A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit and converting means |
| CN108964490A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit and converting means |
| CN108964505B (en) * | 2017-05-19 | 2020-08-28 | 科华恒盛股份有限公司 | T-shaped conversion circuit and corresponding three-phase conversion circuit and conversion device |
| CN108964490B (en) * | 2017-05-19 | 2020-08-28 | 科华恒盛股份有限公司 | T-shaped conversion circuit and corresponding three-phase conversion circuit and conversion device |
| CN108964508A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of T-type translation circuit and corresponding three-phase translation circuit |
| CN108964508B (en) * | 2017-05-19 | 2020-08-28 | 科华恒盛股份有限公司 | T-shaped conversion circuit and corresponding three-phase conversion circuit |
| CN108964507B (en) * | 2017-05-19 | 2020-10-16 | 科华恒盛股份有限公司 | T-shaped conversion circuit and corresponding three-phase conversion circuit |
| CN108988668A (en) * | 2018-08-16 | 2018-12-11 | 厦门科华恒盛股份有限公司 | A kind of T-type rectification circuit and corresponding rectified three-phase circuit |
| CN109245509A (en) * | 2018-11-05 | 2019-01-18 | 宁波市北仑临宇电子科技有限公司 | The lossless asynchronous absorption circuit of peak voltage and NPC tri-level circuit |
| CN113162449A (en) * | 2021-05-07 | 2021-07-23 | 科华数据股份有限公司 | Three-level inverter circuit and converter |
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Address after: Nanshan District Xueyuan Road in Shenzhen city of Guangdong province 518055 No. 1001 Nanshan Chi Park building B2 Applicant after: Vitamin Technology Co., Ltd. Address before: 518057 Nanshan District science and Technology Industrial Park, Guangdong, Shenzhen Branch Road, No. Applicant before: Aimosheng Network Energy Source Co., Ltd. |
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Application publication date: 20151104 |