JP6491201B2 - 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法 - Google Patents
双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法 Download PDFInfo
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- JP6491201B2 JP6491201B2 JP2016523865A JP2016523865A JP6491201B2 JP 6491201 B2 JP6491201 B2 JP 6491201B2 JP 2016523865 A JP2016523865 A JP 2016523865A JP 2016523865 A JP2016523865 A JP 2016523865A JP 6491201 B2 JP6491201 B2 JP 6491201B2
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- 238000000034 method Methods 0.000 title claims description 46
- 230000002457 bidirectional effect Effects 0.000 title description 53
- 239000004065 semiconductor Substances 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 31
- 239000010410 layer Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 12
- 238000005215 recombination Methods 0.000 description 11
- 230000006798 recombination Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 230000002441 reversible effect Effects 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003447 ipsilateral effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1582—Buck-boost converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/66—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal
- H02M7/68—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters
- H02M7/72—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/79—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/797—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
Description
2013年6月24日出願の米国出願第61/838,578号(代理人整理番号IPC−036P)、2013年7月1日出願の同第61/841,624号(代理人整理番号IPC−039P)、2013年12月11日出願の同第61/914,491号(代理人整理番号IPC−201P)、2013年12月11日出願の同第61/914,538号(代理人整理番号IPC−202P)、2014年1月8日出願の同第61/924,884号(代理人整理番号IPC−203P)、2014年1月9日出願の同第61/925,311号(代理人整理番号IPC−204P)、2014年1月16日出願の同第61/928,133号(代理人整理番号IPC−207P)、2014年1月17日出願の同第61/928,644号(代理人整理番号IPC−208P)、2014年1月21日出願の同第61/929,731号(代理人整理番号IPC−209.P)、2014年1月21日出願の同第61/929,874号(代理人整理番号IPC−205.P)、2014年1月30日出願の同第61/933,442号(代理人整理番号IPC−211.P)、2014年6月3日出願の同第62/007,004号(代理人整理番号IPC−212.P)、及び2014年6月5日出願の同第62/008,275号(代理人整理番号IPC−212.P2)の優先権を主張するものであり、これら全ては、参照により本明細書に援用される。
[背景]
本出願は、双方向バイポーラトランジスタに関し、より具体的には、双方向バイポーラトランジスタを組み込む電力変換器に、かつ関連方法に関する。
[電力パケットスイッチング変換器]
その全体が参照により本出願に援用される、“Universal power conversion methods”と題された米国特許第7,599,196号において、新しい種類の電力変換器が開示された。この特許は、キャパシタによって分路されたリンクインダクタへ、及びそこから電力を送り込む、双方向(または多方向)電力変換器について説明する。
[双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法]
本出願は、他の発明の中でもとりわけ、双方向バイポーラトランジスタがスイッチとして使用される、電力パケットスイッチング電力変換器を教示する。
本出願はまた、他の発明の中でもとりわけ、電力パケットスイッチング電力変換器がスイッチングのために双方向バイポーラトランジスタを使用する、双方向バイポーラトランジスタを有する電力パケットスイッチング電力変換器を教示する。
本出願の多数の創造的な教示が、現在の好ましい実施形態への具体的な参照によって説明されるであろう(限定目的ではなく例として)。本出願は、幾つかの発明を説明し、下の記述の全ては、請求項の範囲を制限するものとして一般的に理解されるべきでない。
効率性の1つの要素は、スイッチング素子における損失である。IGBT素子は、順方向「ダイオード電圧降下」電圧によって引き起こされる、オン状態の電圧差異に対して、本質的に責任がある(任意の抵抗損失に加えて)。FETは典型的にはダイオード電圧降下で悩まされないが、伝導率変調の不足に対応せねばならず、つまり、FETのオン抵抗は、ベース半導体の固有抵抗を下回ってはならない。
[基本的な実装形態]
単純なNPN及びPNPの実装形態が、まず説明されるであろう。下に考察される、例示的な実施形態のこの型における改善が、より好ましいが、この種類は、基本的な概念及び原理をより明確に例証するために役立つ。
[動作方法]
図2はベース駆動回路の1つの実装形態の簡略図を示し、これは図3A〜3Fと共に、BTRAN210の基本的な動作を例証するために使用され得る。
1)最初に、図3Bで見られるように、エミッタ/コレクタ端子T1における電圧は、エミッタ/コレクタ端子T2に関して陽である。スイッチ314A及び316Aはオープンであり、ベース端子B1をオープンにしている。スイッチ314Bが閉じられ、ベース端子B2をエミッタ/コレクタ端子T2に短絡させる。これは、次いで、ボディダイオード312Bを機能的に迂回させる。この状態において、素子をオフにする。この状態において、素子の上側の逆バイアスされたP−N接合(ボディダイオード312Aによって表される)によって、電流は全く流れないであろう。
[両面上に深いエミッタを伴うBTRAN]
図4Aは、本発明に係る、エピタキシャルベースBTRANの、別の例示的な実施形態(この回路シンボルは、図5Aにおいて確認できる)を示す。対照的に、図4Bは、従来の、エピタキシャルベースバイポーラトランジスタ(この回路シンボルは、図5Bにおいて確認できる)を示す。これら2つの素子は、BTRANの下面上の第2のベースコンタクト領域の存在をも越えて、それらの構造において著しく異なる。
[トレンチ絶縁]
図13Aは、それぞれの表面上の、エミッタ領域(NPNの場合N+)を隣接するベースコンタクト領域から横方向に分離する酸化物充填トレンチを示すことに留意されたい。この構造、及びその利点については、以下の項において更に説明されるであろう。
[トンネル酸化物]
高レベル非平衡キャリア密度の結果として、NPN BTRANにおいて、ベースからエミッタへの正孔の注入を最小限に抑えながら、エミッタからベースへの電子の注入を最大限にすることが、典型的に望ましい。一部の例示的な実施形態において、エミッタからベースへの高い電子注入、及びベースからエミッタへの低い正孔注入は、およそ、例えば10Å(1nm)であり得る、トンネル酸化物の使用で達成され得る。電子は典型的に、薄いトンネル酸化物を通り抜けて進むという確率を、正孔よりも遥かに高く有するであろう。
高レベル状態電流ゲインの因子であり得る表面再結合速度は、金属コンタクトでの、主としてエミッタコンタクト上の再結合により、問題となり得る。一部の例示的な実施形態において、トンネル酸化物は、正孔のエミッタコンタクトへの到達を遮断することによって、NPN BTRAN中のこの再結合をほぼ排除するために使用され得る。図14Aの例示的な実施形態において、トンネル酸化物1424Aは、エミッタ領域1404及びベース102Aの間に配置される。図13Aのように、酸化物充填トレンチ1330は、N+エミッタ領域1404及びP+ベースコンタクト領域1336の間に配置される。N+エミッタ領域1404は、トンネル酸化物1424Aの上部に堆積されるため、N+領域1404は、単結晶基材の一部として形成されるよりもむしろ、例えば多結晶シリコンであり得る。
[ヘテロ接合エミッタを伴う素子]
他の例示的な実施形態において、電子正孔の識別は、ヘテロ接合エミッタ領域を用いて達成され得る。図15の例示的な実施形態において、エミッタ領域1504は、例えば結晶質基材上の非晶質シリコンであり得る。非晶質シリコンは、結晶質シリコンの1.1Vのバンドギャップと比較すると、1.4Vのバンドギャップを有するため、エミッタ1504からベース102Aに注入される電子は比較的エネルギー性であり、ベース102Aからエミッタ1504に注入される正孔よりも、より多くの電子が、エミッタ1504Aからベース102Aに注入される。
[ベース駆動]
本発明に係るベース駆動回路は、本明細書において説明される動作を許容するために、好ましくは、BTRANの2つのベース端子のそれぞれに対して適用される。1つの例示的な実施形態において、例示的なBTRANベース駆動回路は好ましくは、BTRANがダイオードとしてオンになることと、最初のターンオン後の、非常に低い順方向電圧の飽和モードへの移行と、既に飽和ではないが未だオンである状態への移行して帰ることと、ターンオフ前の、テール電流の低減のための蓄積電荷低減の達成と、それに次ぐフルターンオフの達成及び順方向電圧の遮断とを可能にする。
MOSFET、Q41及びQ42は、素子がオンにされた後に、順方向電圧降下Vfを低減するために好ましくは使用される。
[製作]
1つの例示的な実施形態において、有利なことに、水素化非晶質シリコン(a−Si:H)または水素化非晶質シリコンカーバイド(a−SiC:H)の堆積が、本明細書において説明されるヘテロ接合エミッタを有するBTRANを製作するために、使用され得る。この材料はスパッタされ得るが、より好ましくは、化学蒸着法(CVD)またはプラズマ増強CVDを用いて堆積される。これらの材料は高温処理によって変化されるため、エミッタ材料は、高温処理ステップが完了した後に堆積される必要がある。
ステップ1からステップM:ウェハの片側において、熱酸化、幾つかの化学蒸着(CVD)作業、及び高温アニールから、コンタクトマスクステップに至るまで、全ての高温ステップを実行する。これは、ウェハの両側において所望される接合深さまで不純物を拡散させるよう企図された、比較的長時間の高温拡散ステップの手前で止まる。
ステップM+4からステップN:素子ウェハの第2の側において、ステップ1からMを実行する。
ステップN+2からステップP:素子ウェハの第2の側において、コンタクトマスクからパッシベーション層堆積及びパッドエッチステップまでのステップを実行する。
ステップP+4からステップQ:素子ウェハの第1の側において、コンタクトマスクをパッシベーション堆積及びパッドエッチングステップを通じて実行する。この時点で、ウェハは従来のウェハ処理を完了した。
ステップQ+2:素子ウェハの第2の側からハンドルウェハ2を取り除き、例えば図16Eのもののような構造がもたらされる。
1つの例示的な実施形態において、素子の第1の側は、素子ウェハの第2の側からハンドルウェハ2が取り除かれる前に、鍍金され得る。
1)ダイの上部表面上に、適当な大きさの、必要とされる大径ワイヤ接合の必要な数を収容するために十分な接合パッドが存在する。
3)オープンな、鍍金された領域のパターンが、ダイを損傷するのに十分なほど大きい応力をもたらなさない。
[利点]
様々な実施形態において、開示される本技術革新は、少なくとも以下の利点のうちの1つ以上を提供する。しかしながら、これらの利点の全てが、開示される発明の1つずつからもたらされるわけではなく、この利点の一覧は、様々な特許請求される発明を制限するものではない。
・双方向動作が、いずれかの方向において、同様の電気特性を伴って達成される。
・完全に平坦な平面素子を提供する
・双方向バイポーラトランジスタが、高い非平衡キャリア濃度の条件下で動作する。
・高い頑強さ。
・両側性双方向素子の製作を可能にする、創造的な製作技術。
・電力パケットスイッチング電力変換器中の完全な双方向スイッチングを可能にする。
・二重拡散型ベースが全く必要ない。
[修正及び変形]
当業者によって認識されるように、本出願において説明される創造的な概念は、広大な範囲の用途に対して修正及び変形することができ、したがって、特許を取得した主題は、所与の具体的な例示的教示のいずれによっても制限されない。添付の特許請求の範囲の精神及びその広い範囲内に入る、そのような代替、修正、及び変形の全てが包含されることが意図される。
一部のヘテロ接合の実施形態において、エミッタ/コレクタ領域は、結晶質シリコン基材上の非晶質シリコンであり得る。他の実施形態において、ヘテロ接合は異なって形成され得る。
一部のヘテロ接合の例示的な実施形態において、ヘテロ接合は、例えば非晶質及び結晶質シリコンの間の接合によって提供され得る。他の実施形態において、ヘテロ接合は、例えば異なる材料によって提供され得る。更に他の実施形態において、ヘテロ接合は、例えば結晶質シリコン及び異なる結晶質半導体の間の、例えば結晶質−結晶質接合によって提供され得るが、但し、結果として生じる接合部電位が、注入効率を増加させるために十分に急峻であることを条件とする。
ヘテロ接合BTRANの一部の例示的な実施形態において、ヘテロ接合エミッタ/コレクタ領域は、例えば非晶質シリコンであり得る。他の例示的な実施形態において、ヘテロ接合エミッタ/コレクタ領域は、例えば多結晶シリコンであり得る。更なる他の実施形態において、これは異なり得る。
一部の実施形態において、高レベル非平衡キャリア密度における注入効率を増加させるための他の方法が、単独で、または本明細書において開示される創造的な技術と共に、使用され得る。
一部の代替的な実施形態において、本発明の創造的な素子は、有利なことに、異なる種類の電力変換器に適用され得る。一部の代替的な実施形態において、本創造的な素子は、例えばマトリクスコンバータ用に使用され得る。他の代替的な実施形態において、本創造的な素子は、誘導電動機効率最適化及びソフトスタートのために使用されるように、例えば電圧低下レギュレータに対して適用され得る。
変形及び実装形態を示すために役立つ、追加的な一般的背景を、以下の出版物、T.Trajkovicらの“The Effect of Static and Dynamic Parasitic Charge in the Termination Area of High Voltage Devices and Possible Solutions”において確認することができ、それら全てが参照により本明細書に援用される。
US 8,406,265、US 8,400,800、US 8,395,910、US 8,391,033、US 8,345,452、US 8,300,426、US 8,295,069、US 7,778,045、US 7,599,196、US 2012−0279567 A1、US 2012−0268975 A1、US 2012−0274138 A1、US 2013−0038129 A1、US 2012−0051100 A1、PCT/US 14/16740、PCT/US 14/26822、PCT/US 14/35954、PCT/US 14/35960、14/182,243、14/182,236、14/182,245、14/182,246、14/183,403、14/182,249、14/182,250、14/182,251、14/182,256、14/182,268、14/183,259、14/182,265、14/183,415、14/182,280、14/183,422、14/182,252、14/183,245、14/183,274、14/183,289、14/183,309、14/183,335、14/183,371、14/182,270、14/182,277、14/207,039、14/209,885、14/260,120、14/265,300、14/265,312、14/265,315、2013年2月15日に全て出願された、米国仮出願61/765,098、61/765,099、61/765,100、61/765,102、61/765,104、61/765,107、61/765,110、61/765,112、61/765,114、61/765,116、61/765,118、61/765,119、61/765,122、61/765,123、61/765,126、61/765,129、61/765,131、61/765,132、61/765,137、61/765,139、61/765,144、61/765,146、2013年3月13日に全て出願された、61/778,648、61/778,661、61/778,680、61/784,001、2013年4月23日に出願された、61/814,993、2013年4月29日に出願された、61/817,012、61/817,019、61/817,092、2013年6月24日に出願された、61/838,578、2013年7月1日に出願された、61/841,618、61/841,621、61/841,624、2013年12月11日に出願された、61/914,491、及び61/914,538、2014年1月8日に出願された、61/924,884、2014年1月9日に出願された、61/925,311、2014年1月16日に出願された、61/928,133、2014年1月17日に出願された、61/928,644、2014年1月21日に出願された、61/929,731、及び61/929,874、2014年1月27日に出願された、61/931,785、2014年1月28日に出願された、61/932,422、2014年1月30日に出願された、61/933,442、2014年6月3日に出願された、62/007,004、ならびにこれらの上記のいずれかについての全ての優先権出願が、参照により本明細書に援用される。
Claims (6)
- p型半導体ダイの第1の対向表面及び第2の対向表面の双方の各々上にn型エミッタ/コレクタ領域とp型ベース接触領域との双方を含む電力半導体素子をスイッチングする方法であって、
オン状態において、前記エミッタ/コレクタ領域の間に外部電圧差が印加されると、前記エミッタ/コレクタ領域のうちのより正である方を前記第1の表面及び前記第2の表面のうちの同じ1つ上の前記ベース接触領域と短絡することにより、該ベース接触領域を介してベース電流を流し、前記ベース接触領域の他方を介してベース電流を流さないことを備え、
前記第1の表面上の前記ベース接触領域は、前記半導体ダイ自体を通ることを除いて、前記第2の表面上の前記ベース接触領域に電気的に接続されておらず、
前記第1の表面上の前記エミッタ/コレクタ領域は、前記印加された外部電圧差を作用させない場合に、前記半導体ダイ自体を通ることを除いて、前記第2の表面上の前記エミッタ/コレクタ領域に電気的に接続されず、
ダイオード電圧降下未満のオン状態電圧降下を有する双方向スイッチングが達成される、方法。 - 請求項1に記載の方法であって、
前記半導体ダイは、シリコンである、方法。 - 請求項1に記載の方法であって、さらに、
オフ状態では、前記ベース接触領域のうちの1つを浮動させることを備える、方法。 - n型半導体ダイの第1の対向表面及び第2の対向表面の双方の各々上にp型エミッタ/コレクタ領域とn型ベース接触領域との双方を含む電力半導体素子をスイッチングする方法であって、
オン状態において、前記エミッタ/コレクタ領域の間に外部電圧差が印加されると、前記エミッタ/コレクタ領域のうちのより負である方を前記第1の表面及び前記第2の表面のうちの同じ1つ上の前記ベース接触領域と短絡することにより、該ベース接触領域を介してベース電流を流し、前記ベース接触領域の他方を介してベース電流を流さないことを備え、
前記第1の表面上の前記ベース接触領域は、前記半導体ダイ自体を通ることを除いて、前記第2の表面上の前記ベース接触領域に電気的に接続されておらず、
前記第1の表面上の前記エミッタ/コレクタ領域は、前記印加された外部電圧差を作用させない場合に、前記半導体ダイ自体を通ることを除いて、前記第2の表面上の前記エミッタ/コレクタ領域に電気的に接続されず、
ダイオード電圧降下未満のオン状態電圧降下を有する双方向スイッチングが達成される、方法。 - 請求項4に記載の方法であって、
前記半導体ダイは、シリコンである、方法。 - 請求項4に記載の方法であって、さらに、
オフ状態では、前記ベース接触領域のうちの1つを浮動させることを備える、方法。
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US201361838578P | 2013-06-24 | 2013-06-24 | |
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