CH609714A5 - Process for the production of a hydrophilic surface on silicone rubber mouldings - Google Patents
Process for the production of a hydrophilic surface on silicone rubber mouldingsInfo
- Publication number
- CH609714A5 CH609714A5 CH1346074A CH1346074A CH609714A5 CH 609714 A5 CH609714 A5 CH 609714A5 CH 1346074 A CH1346074 A CH 1346074A CH 1346074 A CH1346074 A CH 1346074A CH 609714 A5 CH609714 A5 CH 609714A5
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- silicone rubber
- hydrophilic surface
- rubber mouldings
- mouldings
- Prior art date
Links
- 230000005660 hydrophilic surface Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000010068 moulding (rubber) Methods 0.000 title 1
- 229920002379 silicone rubber Polymers 0.000 title 1
- 239000004945 silicone rubber Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48878974A | 1974-07-15 | 1974-07-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH609714A5 true CH609714A5 (en) | 1979-03-15 |
Family
ID=23941129
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1346074A CH609714A5 (en) | 1974-07-15 | 1974-01-07 | Process for the production of a hydrophilic surface on silicone rubber mouldings |
| CH933875A CH609814A5 (en) | 1974-07-15 | 1975-07-15 | Regenerative multilayer semiconductor switching device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH933875A CH609814A5 (en) | 1974-07-15 | 1975-07-15 | Regenerative multilayer semiconductor switching device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5133986A (en) |
| BE (1) | BE831400A (en) |
| CH (2) | CH609714A5 (en) |
| DE (1) | DE2531249A1 (en) |
| FR (1) | FR2279224A1 (en) |
| GB (1) | GB1513000A (en) |
| NL (1) | NL7508200A (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2560441B1 (en) * | 1984-02-28 | 1986-06-13 | Telemecanique Electrique | TWO-LAYER TRANSMITTER THYRISTOR STRUCTURE FOR HIGH OR HIGH VOLTAGE SWITCHING |
| FR2574594B1 (en) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | INTEGRATED TRIAC STRUCTURE CONTROLLED BY DIAC |
| US4918505A (en) * | 1988-07-19 | 1990-04-17 | Tektronix, Inc. | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
| FR2688941B1 (en) * | 1992-03-20 | 1994-06-17 | Sgs Thomson Microelectronics | ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION. |
| DE19721365A1 (en) * | 1997-05-22 | 1998-11-26 | Asea Brown Boveri | Controllable thyristor on both sides |
| US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
| US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
| JP6491201B2 (en) | 2013-06-24 | 2019-03-27 | アイディール パワー インコーポレイテッド | System, circuit, device, and method having bidirectional bipolar transistor |
| US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| WO2016073957A1 (en) | 2014-11-06 | 2016-05-12 | Ideal Power Inc. | Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors |
| CN109326640A (en) * | 2018-10-25 | 2019-02-12 | 深圳市鹏朗贸易有限责任公司 | A kind of door pole stream-exchanging thyristor and its manufacturing method |
-
1974
- 1974-01-07 CH CH1346074A patent/CH609714A5/en not_active IP Right Cessation
-
1975
- 1975-07-09 GB GB2889075A patent/GB1513000A/en not_active Expired
- 1975-07-09 NL NL7508200A patent/NL7508200A/en not_active Application Discontinuation
- 1975-07-10 FR FR7521677A patent/FR2279224A1/en active Granted
- 1975-07-12 DE DE19752531249 patent/DE2531249A1/en not_active Withdrawn
- 1975-07-15 JP JP8660375A patent/JPS5133986A/en active Pending
- 1975-07-15 CH CH933875A patent/CH609814A5/en not_active IP Right Cessation
- 1975-07-15 BE BE158328A patent/BE831400A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7508200A (en) | 1976-01-19 |
| GB1513000A (en) | 1978-06-01 |
| FR2279224A1 (en) | 1976-02-13 |
| BE831400A (en) | 1976-01-15 |
| CH609814A5 (en) | 1979-03-15 |
| JPS5133986A (en) | 1976-03-23 |
| DE2531249A1 (en) | 1976-02-05 |
| FR2279224B1 (en) | 1981-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |