JP2005238388A5 - - Google Patents

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JP2005238388A5
JP2005238388A5 JP2004051727A JP2004051727A JP2005238388A5 JP 2005238388 A5 JP2005238388 A5 JP 2005238388A5 JP 2004051727 A JP2004051727 A JP 2004051727A JP 2004051727 A JP2004051727 A JP 2004051727A JP 2005238388 A5 JP2005238388 A5 JP 2005238388A5
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carbon
nanostructure
probe
field electron
electron emission
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JP2004051727A
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JP2005238388A (en
JP4539817B2 (en
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基体上に成長した炭素構造体の頂点付近の炭素原子と化学結合して該頂点上に成長したカーボンナノチューブ、カーボンナノファイバーまたはグラファイトナノファイバーから成る炭素ナノ構造体。   A carbon nanostructure comprising carbon nanotubes, carbon nanofibers, or graphite nanofibers that are chemically bonded to carbon atoms near the top of a carbon structure grown on a substrate and grown on the top. 請求項１記載の炭素ナノ構造体の製造方法であって、炭素材料に高エネルギービームを照射することを特徴とする炭素ナノ構造体の製造方法。   2. The method for producing a carbon nanostructure according to claim 1, wherein the carbon material is irradiated with a high energy beam. 請求項１記載の炭素ナノ構造体の切断方法であって、基体上の炭素構造体および炭素ナノ構造体を樹脂中に埋め込み、樹脂および埋め込まれた炭素ナノ構造体を一緒に炭素ナノ構造体側から所定位置まで研磨した後、残留している樹脂を除去することを特徴とする炭素ナノ構造体の切断方法。   The method for cutting a carbon nanostructure according to claim 1, wherein the carbon structure and the carbon nanostructure on the substrate are embedded in a resin, and the resin and the embedded carbon nanostructure are joined together from the carbon nanostructure side. A method for cutting a carbon nanostructure, comprising: removing a residual resin after polishing to a predetermined position. 請求項１記載の炭素ナノ構造体を有することを特徴とする走査トンネル顕微鏡または原子間力顕微鏡の探針。   A scanning tunneling microscope or atomic force microscope probe comprising the carbon nanostructure according to claim 1. 請求項１記載の炭素ナノ構造体を有することを特徴とする電界電子放出源。   A field electron emission source comprising the carbon nanostructure according to claim 1. 請求項１記載の炭素ナノ構造体が複数個並列に配置され且つ炭素構造体を単一の基材中に埋め込まれて一体化した構造を有することを特徴とする走査トンネル顕微鏡または原子間力顕微鏡の探針。   A scanning tunneling microscope or an atomic force microscope comprising a plurality of carbon nanostructures according to claim 1 arranged in parallel and a structure in which carbon structures are embedded in a single base material. Probe. 請求項１記載の炭素ナノ構造体が複数個並列に配置され且つ炭素構造体を単一の基材中に埋め込まれて一体化した構造を有することを特徴とする電界電子放出源。   2. A field electron emission source comprising: a plurality of carbon nanostructures according to claim 1 arranged in parallel; and a structure in which carbon structures are embedded in a single substrate and integrated. 請求項６記載の探針または請求項７記載の電界電子放出源の製造方法であって、
基材の表面を、上記炭素ナノ構造体の複数個並列配置に対応する位置に開口を有するマスクで覆う工程、
上記マスクの開口内に露出した基材の表面に、エッチングにより窪みを形成する工程、
上記マスク上から炭素を堆積させる工程、
上記マスクを除去して、上記窪み内のみに上記堆積炭素を残す工程、
上記窪み内に炭素を堆積させた側の基材表面に高エネルギービームを照射することにより、該堆積炭素上に上記炭素ナノ構造体を成長させる工程
を含むことを特徴とする探針または電界電子放出源の製造方法。 A method for manufacturing the probe according to claim 6 or the field electron emission source according to claim 7 ,
Covering the surface of the substrate with a mask having an opening at a position corresponding to a plurality of the carbon nanostructures arranged in parallel;
Forming a depression by etching on the surface of the base material exposed in the opening of the mask,
Depositing carbon on the mask;
Removing the mask and leaving the deposited carbon only in the depressions;
A probe or a field electron comprising a step of growing the carbon nanostructure on the deposited carbon by irradiating the surface of the substrate on which carbon is deposited in the depression with a high energy beam. A method of manufacturing a release source. 請求項４または６において、炭素ナノ構造体のラマン分析により得られるＧバンドとＤバンドのピーク強度比Ｇ／Ｄが１よりも大きいことを特徴とする探針。 According to claim 4 or 6, the probe, wherein the peak intensity ratio G / D of G band to D band obtained by Raman analysis of the carbon nanostructures is greater than 1. 請求項５または７において、炭素ナノ構造体のラマン分析により得られるＧバンドとＤバンドのピーク強度比Ｇ／Ｄが１よりも大きいことを特徴とする電界電子放出源。 According to claim 5 or 7, field electron emission source, wherein the peak intensity ratio G / D of G band to D band obtained by Raman analysis of the carbon nanostructures is greater than 1. 請求項４または６において、炭素ナノ構造体が多層カーボンナノチューブであり、最表層が化学的修飾により絶縁性を付与されていることを特徴とする探針。 According to claim 4 or 6, carbon nanostructure is a multilayer carbon nanotube, probe, wherein the outermost layer is imparted an insulating property by chemical modification. 請求項５または７において、炭素ナノ構造体が多層カーボンナノチューブであり、最表層が化学的修飾により絶縁性を付与されていることを特徴とする電界電子放出源。 According to claim 5 or 7, carbon nano-structures is a multilayer carbon nanotube, field electron emission source, wherein the outermost layer is imparted an insulating property by chemical modification. 請求項４または６において、炭素ナノ構造体が多層カーボンナノチューブであり、最表層がキラル構造またはジグザグ構造であることを特徴とする探針。 According to claim 4 or 6, carbon nanostructure is multi-walled carbon nanotubes, the probe, wherein the outermost layer is chiral structure or zigzag structure. 請求項５または７において、炭素ナノ構造体が多層カーボンナノチューブであり、最表層がキラル構造またはジグザグ構造であることを特徴とする電界電子放出源。 According to claim 5 or 7, carbon nanostructures are multi-walled carbon nanotubes, field electron emission source, wherein the outermost layer is chiral structure or zigzag structure.
JP2004051727A 2004-02-26 2004-02-26 Method for producing carbon nanostructure Expired - Fee Related JP4539817B2 (en)

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JP2004051727A JP4539817B2 (en) 2004-02-26 2004-02-26 Method for producing carbon nanostructure

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JP2005238388A JP2005238388A (en) 2005-09-08
JP2005238388A5 true JP2005238388A5 (en) 2006-11-30
JP4539817B2 JP4539817B2 (en) 2010-09-08

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JP4872042B2 (en) * 2005-05-10 2012-02-08 国立大学法人名古屋大学 High-density carbon nanotube aggregate and method for producing the same
JP4806762B2 (en) * 2006-03-03 2011-11-02 国立大学法人 名古屋工業大学 SPM cantilever
CN101206980B (en) * 2006-12-22 2010-04-14 清华大学 Method of preparing field-emissive cathode
US7601650B2 (en) * 2007-01-30 2009-10-13 Carbon Design Innovations, Inc. Carbon nanotube device and process for manufacturing same
US8435449B2 (en) 2007-03-05 2013-05-07 Sharp Kabushiki Kaisha Chemical substance sensing element, chemical substance sensing apparatus, and method of manufacturing chemical substance sensing element
CN102874749B (en) * 2012-09-12 2014-03-19 中国科学技术大学 Method for manufacturing nano pipes
CN106180678B (en) * 2016-08-02 2018-02-13 东南大学 A kind of method for preparing lead atom chain

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JPH05182583A (en) * 1991-12-27 1993-07-23 Nippon Steel Corp Field emission type element and manufacture thereof
JP2873930B2 (en) * 1996-02-13 1999-03-24 工業技術院長 Carbonaceous solid structure having carbon nanotubes, electron emitter for electron beam source element composed of carbonaceous solid structure, and method of manufacturing carbonaceous solid structure
US6283812B1 (en) * 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
KR20000055300A (en) * 1999-02-05 2000-09-05 임지순 Field emission tip
US6322713B1 (en) * 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
JP4357066B2 (en) * 2000-03-03 2009-11-04 株式会社ノリタケカンパニーリミテド Field electron emission device and manufacturing method thereof
JP3502804B2 (en) * 2000-03-17 2004-03-02 株式会社 ケイアンドティ Method for growing carbon nanotubes and method for manufacturing electron gun and probe using the same
KR20020049630A (en) * 2000-12-19 2002-06-26 임지순 field emitter
JP2003297222A (en) * 2002-03-29 2003-10-17 Japan Fine Ceramics Center Electron emitting element and its manufacturing method
JP2005206936A (en) * 2003-10-06 2005-08-04 Jfe Steel Kk Metal sheet in which carbon nanofiber is easy to be formed, its production method, and nanocarbon emitter

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