JP2005012940A - Inverter device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inverter device reducible in inductance parasitizing on wiring from a DC smoothing capacitor to a power semiconductor element, small in size and high in reliability. <P>SOLUTION: A capacitor module 1 is constituted by containing in a case 4 a plurality of capacitor elements 11A, 12A and 13A which are connected in parallel with one another by positive and negative connecting conductors 52, 62, of which the one-side ends serve as positive and negative terminals, and which form three pairs of the elements. The capacitor module also comprises positive and negative insulating laminated conductors 5, 6 that connect capacitor positive and negative terminals 112 to 114 and positive and negative terminals 102 to 104, 202 to 204 of a semiconductor module 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an inverter device in which a capacitor module constituting a DC smoothing circuit and a power semiconductor module constituting an inverse conversion circuit for all phases or one phase of a three-phase inverter or a single-phase inverter are housed in the same casing. In particular, the present invention relates to an inverter device that has a relatively small device capacity and is small and requires high reliability, such as for an electric vehicle.
[0002]
[Prior art]
In recent years, the importance of inverter devices has increased for the effective use of energy resources and protection of the global environment, and the need for miniaturization and higher reliability of inverter devices has also increased. In order to reduce the size and increase the reliability of the inverter device, it is indispensable to efficiently use the power semiconductor element of the main converter. That is, it is desirable to be able to energize as close as possible to the allowable upper limit value of energization rating such as voltage and current of the element.
[0003]
However, in actuality, due to manufacturing variations of elements, external circuit factors, etc., it is necessary to have a device configuration in which a safety margin is added to the energization current / voltage. As an external circuit factor, there is a switching surge voltage generated by circuit inductance from the DC smoothing capacitor to the power semiconductor element. Since the value obtained by subtracting the surge voltage component from the maximum voltage that can be applied to the element is the voltage that can be actually energized, the voltage that can actually be energized can be increased if the generated surge voltage is suppressed small.
[0004]
The switching surge voltage ΔV (unit V) at the time of turn-off of the element is L (unit H) as the circuit inductance and di / dt (unit A / s) as the current change rate.
ΔV = −L · di / dt
It is represented by Since the element is aimed at improving the switching speed and it is not preferable to suppress the current change rate, it is important to reduce the inductance L in order to improve the efficiency of the element.
[0005]
In order to reduce the circuit inductance, it is necessary to reduce the parasitic inductance in the internal wiring of the DC smoothing capacitor, the internal wiring of the power semiconductor element, and the external wiring from the capacitor to the element. For this purpose, the internal wiring shape of capacitors and elements, the mutual positional relationship, and the external wiring shape are important elements, and various configurations and structures have been proposed.
[0006]
For example, in an inverter device applied to an electric vehicle, the arrangement of the switching unit, the capacitor, and the cooling block and the charge / discharge terminal of the capacitor are devised to shorten the length of the connection conductor and reduce the inductance. Is known (see Patent Document 1).
[0007]
Similarly, in an inverter device applied to an electric vehicle, it is known that a flat capacitor is provided on an upper part of the inverter to reduce inductance of both connection lines (see Patent Document 2).
[0008]
A conventional example of this type of inverter device will be described with reference to FIGS. FIG. 10 is a circuit diagram of a three-phase inverter device, showing a DC smoothing circuit and an inverse conversion circuit. FIG. 11 is a slightly rewritten version of FIG. 10 in consideration of the device configuration, and the content is the same as FIG. FIG. 12 is a three-dimensional view showing the configuration of the inverter device corresponding to the circuit diagram of FIG. 13 is an exploded view for supplementarily explaining the configuration of FIG. 12, and FIG. 14 is a partially exploded view for supplementing FIG. FIG. 15 is a plan view showing the inside of the capacitor module, and FIG. 16 is a plan view showing the external wiring shape from the capacitor to the element.
[0009]
In FIG. 10, the smoothing capacitor 10 is a main component of the DC smoothing circuit, and the switching devices 21 to 26 and the diodes 31 to 36 connected in antiparallel to the switching devices constitute an inverse conversion circuit. When the device capacity is relatively small, the switching device and the diode are combined into one part as a module. FIG. 11 is a circuit diagram showing the device configuration in such a case, and shows the capacitor module 1, the power semiconductor module 2, and the wiring form between them.
[0010]
In FIG. 11, the inductance parasitic to the internal wiring of the DC smoothing capacitor corresponds to the inductance between the capacitor positive terminal 101 and the capacitor negative terminal 201 of the capacitor module 1 on the circuit diagram, and a configuration for reducing this is required. . In the case of the W phase, the inductance parasitic to the power semiconductor element corresponds to the inductance between the W phase element positive side terminal 104 and the W phase element negative side terminal 204. Similarly, in the case of the U phase and the V phase, it corresponds to the inductance between the positive side terminal 102 and the negative side terminal 202 and between the positive side terminal 103 and the negative side terminal 203, and a configuration in which the inductances of all phases are reduced is required. It is done.
[0011]
Further, in the case of the W phase, the inductance parasitic to the external wiring from the capacitor to the element is between the positive side terminal 101 of the capacitor module 1 to the W phase positive side terminal 104 of the power semiconductor module 2 and the negative side terminal of the capacitor module 1. This corresponds to the total inductance parasitic on the wiring between 201 and the W-phase negative side terminal 204 of the power semiconductor module 2, and corresponds to the portion indicated by the thick line in FIG. The same applies to the U-phase and V-phase, and a configuration in which the inductances of all phases are equally reduced is required.
[0012]
FIG. 12 is a configuration example of an inverter device corresponding to the circuit of FIG. The power semiconductor module 2 is mounted on a heat sink 3 as a cooler in order to dissipate heat generated during energization. In the capacitor module 1, film capacitor elements 11 </ b> A to 11 </ b> C, 12 </ b> A to 12 </ b> C, and 13 </ b> A to 13 </ b> C excellent in heat resistance are accommodated in a capacitor case 4 made of, for example, PPS (polyphenylene sulfite) resin. The capacitor module 1 and the power semiconductor module 2 are connected by a positive connection conductor 5 and a negative connection conductor 6.
[0013]
FIG. 13 is an exploded view of FIG. 12, and the illustration of the heat sink is omitted here. The capacitor elements 11 </ b> A to 11 </ b> C, 12 </ b> A to 12 </ b> C, and 13 </ b> A to 13 </ b> C are connected in parallel by the positive side connection conductor 50 and the negative side connection conductor 60. A capacitor positive terminal 101 is formed at the end of the positive connection conductor 50, and a capacitor negative terminal 201 is formed at the end of the negative connection conductor 60. The positive conductor 5 connects the capacitor positive terminal 101 and the positive terminals 102, 103, 104 of each phase of the power semiconductor module 2, and the negative conductor 6 is similarly connected to each of the capacitor negative terminal 201 and the power semiconductor module 2. The negative side terminals 202, 203, and 204 of the phase are connected, and are fixed to the respective terminal portions with hexagon bolts 7.
[0014]
FIG. 14 is a partially exploded view of FIG. 13, and clearly shows the shape of each component of the capacitor module 1, particularly the positive side connection conductor 50 and the negative side connection conductor 60.
[0015]
15A is a plan view of the capacitor module 1 and FIG. 15B is a side view thereof. As shown in this figure, the capacitor element 11A and the like are connected to the positive connection conductor 50 in the capacitor case 4 as shown in FIG. It is housed in a state of being connected in parallel with the side connection conductor 60, and is molded by filling the space of the capacitor case 4 with a sealing material 8 made of, for example, polyurethane resin.
[0016]
FIG. 16A is a plan view showing an example of the shape of the positive-side conductor 5, and FIG. 16B is a plan view showing an example of the shape of the negative-side conductor 6, and an electric such as copper having a thickness of 2 mm. It is made of a good conductor material, and is laminated via an insulating material (not shown) so that the distance between each other can be kept small (for example, 1 mm) as shown in FIG.
[0017]
[Patent Document 1]
JP-A-7-298641
[0018]
[Patent Document 2]
Japanese Patent Laid-Open No. 2000-152626
[0019]
[Problems to be solved by the invention]
The conventional inverter device described above has the following problems.
[0020]
The above-described inverter device has a positive side terminal 101, a negative side terminal 201 of the capacitor module 1, and a positive side of the power semiconductor module 2 for the purpose of reducing inductance parasitic on the external wiring from the capacitor 1 to the power semiconductor element. The capacitor module 1 and the power semiconductor module 2 are arranged so that the distance between the terminals 102, 103, 104 and the negative terminals 202, 203, 204 is short. This is a connection between the positive and negative terminals.
[0021]
It is known that if two conductors in which currents flowing in opposite directions are insulated and laminated, a negative mutual inductance is generated and self-inductance can be offset.
[0022]
Also in the above-described inverter device, the arrangement of terminals and the conductor shape are set in expectation of this effect. If the width of both conductors is wide, the distance between the two conductors is small, and the distance between the laminated portions is large, a large inductance canceling effect can be obtained.
[0023]
However, in the terminal connection portion at the conductor end, it is necessary to ensure an appropriate mechanical coupling state by, for example, bolt fastening in order to suppress contact resistance and to take into account mechanical vibration resistance. In the terminal connection part, the bolt head protrudes, and it is difficult to insulate around the contact part, and it is necessary to secure an insulation distance necessary for air insulation. Therefore, it is almost impossible to insulate and laminate the conductor near the terminal connection portion.
[0024]
FIG. 16 is a plan view showing a shape example of the positive side conductor 5 and the negative side conductor 6. The positive side conductor 5 has a current path from the capacitor positive side connection portion 101A to the W phase element positive side connection portion 104A, and the negative side conductor 6 has a current path from the W phase element negative side connection portion 204A to the capacitor negative side connection portion 201A. Each current path is indicated by an arrow.
[0025]
As can be seen from FIG. 16, in the current path, the part where the reverse current is actually in the laminated state is the part with hatched lines in the figure, and is small as seen from the whole. Therefore, due to the restrictions on the conductor terminal connection portion as described above, even if a configuration in which positive and negative conductors are insulated and laminated is employed, a large inductance canceling effect cannot be obtained.
[0026]
For example, when the conductor is formed of a good electrical conductor material such as copper having a thickness of 2 mm and the mutual distance between the conductors is 1 mm, the inductance analysis value of the current path illustrated in FIG.
Self-inductance: 42.7nH (same value on both positive and negative sides)
Mutual inductance: -21.6nH
Total inductance: (42.7-21.6) × 2 = 42.2 nH
It becomes. In the case of the U phase, the same value is obtained.
[0027]
On the other hand, the value is different in the case of the V phase. The current path of the positive side conductor 5 is from the capacitor positive side connection part 101A to the V phase element positive side connection part 103A, and the current path of the negative side conductor 6 is from the V phase element negative side connection part 203A to the capacitor negative side connection part 201A. Become. Unlike the case of the W phase or the U phase, the conductor has no laminated portion, but the current path length is smaller than the other phases because the distance between both terminals of the capacitor and the element is small. The inductance analysis value for V phase is
Self-inductance: 16.4nH (same value on both positive and negative sides)
Mutual inductance: -5.0nH
Total inductance: (16.4-5.0) × 2 = 22.8 nH
It becomes. Although they are not laminated in an insulating manner, negative mutual inductance occurs because the directions of currents are opposite to each other.
[0028]
According to the above analysis value, the ratio of the W phase and U phase inductance to the V phase inductance is 185%, and the W and U phases are 85% larger than the V phase. For this reason, although the V-phase inductance is small, the apparatus must be configured based on the larger W and U-phase inductance values. That is, since the inductance is large, the generated surge voltage proportional to the inductance increases, and as a result, the voltage that can be actually energized decreases. The restriction on the energizable voltage relatively increases the size of the apparatus. In addition, the repetition of a large surge voltage results in electrical stress accumulation in the element, which reduces reliability.
[0029]
An object of the present invention is to provide a small and highly reliable inverter device that can reduce the parasitic inductance in the wiring portion from the DC smoothing capacitor to the power semiconductor element.
[0030]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a power semiconductor module and a capacitor module, and in an inverter device formed by connecting DC terminals of the semiconductor module and the capacitor module,
The capacitor module includes a plurality of capacitor elements, a positive and negative connection conductor having one end connected to the capacitor positive and negative terminals, and an element pair including the positive and negative connection conductors and the plurality of capacitor elements. With multiple
A positive and negative insulating laminated conductor for connecting between the positive and negative terminals of the capacitor and the positive and negative terminals of the semiconductor module is provided.
[0031]
According to the present invention, since the insulated laminated conductor connects the positive and negative terminals of the capacitor and the positive and negative terminals of the semiconductor module, the feeding paths of the positive and negative terminals of the capacitor and the semiconductor module in each phase are substantially the same, and a plurality of elements Since the pairs are connected in parallel, the inductance of all phases can be made uniform and small.
[0032]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0033]
(First embodiment: corresponding to claims 1 to 3)
A first embodiment of the present invention will be described with reference to FIGS. 1, 2, and 3. FIG.
[0034]
FIG. 1 is a three-dimensional view of the inverter device according to the first embodiment of the present invention, and corresponds to FIG. 12 of the conventional inverter device. FIG. 2 is an exploded view of FIG. 1 and corresponds to FIG. 13 of the conventional inverter device, and the illustration of the heat sink as a cooler is omitted here. FIG. 3 is an exploded view showing the capacitor elements for one phase housed in the capacitor module, and the shapes of the positive side connection conductor and the negative side connection conductor.
[0035]
In FIG. 3, three capacitor elements 13A, 13B, and 13C are connected in parallel by a positive side connection conductor 54 having a positive side connection terminal 114 and a negative side connection conductor 64 having a negative side connection terminal 214. Is configured.
[0036]
In FIG. 2, the three pairs of elements shown in FIG. 3 are accommodated in a capacitor case 4-1 made of, for example, PPS resin and insulated and sealed with a sealing material made of, for example, polyurethane resin (not shown). 1 is configured.
[0037]
Capacitor positive side connection portions 112A, 113A, and 114A are formed on the positive side conductor 5-1 together with element positive side connection portions 102A, 103A, and 104A. In addition, capacitor negative side connection portions 212A, 213A, and 214A are formed on the side conductor 6-1 together with element negative side connection portions 202A, 203A, and 204A. And each terminal of the capacitor module 1-1 and each terminal of the power semiconductor element 2 are connected by the positive side conductor 5-1 and the negative side conductor 6-1. FIG. 1 shows a state in which the parts are joined.
[0038]
The positive-side conductor 5-1 and the negative-side conductor 6-1 are positive and negative insulated laminated conductors, which are formed of a good electrical conductor material such as copper having a thickness of 2 mm, for example, and have a small mutual distance as shown in FIG. (For example, 1 mm) It laminates | stacks through the insulating material which is not illustrated so that it can hold | maintain. As described above, such positive and negative insulated laminated conductors are known to generate negative mutual inductance and cancel self-inductance. Preferably, the width of both conductors is widened, By reducing the interval and further increasing the distance between the laminated portions, a large inductance canceling effect can be obtained.
[0039]
When the inverter device is configured in this way, the positive side conductor 5-1 and the negative side conductor 6-1 form a power feeding path from the capacitor positive and negative terminals to the positive and negative terminals of the semiconductor module, and inside the capacitor case 4 each other. It also serves to connect three capacitor element pairs that are not connected to each other in parallel.
[0040]
Here, the W phase is considered in the wiring path from the capacitor module to the power semiconductor module. The wiring path for the W phase is between the positive terminal 114 of the capacitor module 1 and the negative terminal 104 of the power semiconductor module and between the negative terminal 204 and the negative terminal 214 or between the positive terminal 113 and the positive terminal 104 and negative. There are three sets between the side terminal 204 and the negative side terminal 213, or between the positive side terminal 112 and the positive side terminal 104, and between the negative side terminal 204 and the negative side terminal 212.
[0041]
Among these three sets of paths, the path between the positive side terminal 114 and the negative side terminal 104 and the path between the negative side terminal 204 and the negative side terminal 214 has the smallest inductance, and the V-phase inductance shown in the conventional configuration (analysis) (Value: 22.8 nH in total).
[0042]
Similarly, there are three sets of wiring paths from the U-phase capacitor module to the power semiconductor module, and the path between the positive terminal 112 and the negative terminal 102 and the path between the negative terminal 202 and the negative terminal 212 is the most inductance. And is equivalent to the V-phase inductance (analyzed value: 22.8 nH in total) shown in the conventional configuration.
[0043]
Further, for the V phase, the wiring paths from the capacitor module to the power semiconductor module are similarly set to three sets, and the path between the positive terminal 113 and the negative terminal 103 and the path between the negative terminal 203 and the negative terminal 213 is the most. The inductance is small and is equivalent to the V-phase inductance of the conventional configuration (analysis value: 22.8 nH in total).
[0044]
As described above, according to the present embodiment, a plurality of element pairs constituting the capacitor module 1-1 are connected in parallel, and the capacitor is formed by the positive conductor 5-1 and the negative conductor 6-1 that are insulating laminated conductors. Since the positive and negative terminals are connected to the positive and negative terminals of the semiconductor module, the inductance from the capacitor module 1-1 to each element of the power semiconductor module 2 is suppressed to the same and small value for any of the U phase, V phase, and W phase. Therefore, a small and highly reliable inverter device can be provided.
[0045]
(Second embodiment: corresponding to claim 4)
Next, a second embodiment of the present invention will be described with reference to FIG. 4 in which the same parts as those in FIGS. FIG. 4 is a three-dimensional view showing a part of the capacitor module 1-2 of the inverter device shown in the first embodiment.
[0046]
In FIG. 4, a positive-side conductor 5-2 and a negative-side conductor 6-2 are built in a capacitor case 4-2, and the positive-side connection conductors 52-1, 53-1 of each phase are provided inside the case 4-2. One end of 54-1 is directly connected to the positive conductor 5-2, and one end of each phase negative connection conductor 62-1, 63-1, 64-1 is directly connected to the negative conductor 6-2. .
[0047]
Specifically, the positive-side conductor 5-2, the negative-side conductor 6-2, and the positive-side connection conductors 52-1, 53-1, and 54-1 of each phase are integrated before being stored in the capacitor case 4-2. Or the positive-side conductor 5-2, the negative-side conductor 6-2, and the positive-side connection conductors 52-1, 53-1, 54-1 of each phase are joined together by means such as brazing. take.
[0048]
The positive side conductor 5-2 and the negative side conductor 6-2 are laminated in the same manner as in the first embodiment, and this portion is insulated and molded with a sealing material (not shown) like the capacitor element. Yes.
[0049]
According to this embodiment having such a configuration, the same effects as those of the first embodiment can be obtained, and the following special effects can also be obtained.
[0050]
That is, when the capacitor module 1-2 is configured as shown in FIG. 4, it is necessary in the first embodiment between the positive and negative conductors 5 and 6 and the positive and negative terminals of the capacitor module 1 in FIG. Need not be fastened with bolts.
[0051]
In the first embodiment, another part cannot be disposed close to the charged bolt head, but the bolt is no longer necessary. Can be diverted to In other words, the diversion space can be reduced in size.
[0052]
Furthermore, since the positive side conductor 5-2 and the negative side conductor 6-2 can be sealed simultaneously with the capacitor element 1-2, the number of assembling steps can be reduced and the manufacturing cost can be reduced.
[0053]
(Third embodiment: corresponding to claim 5)
Next, a third embodiment of the present invention will be described with reference to FIG. 5 in which the same parts as those in FIGS. Similarly, FIG. 5 is a three-dimensional view showing a part of the capacitor module 1-1 in the inverter device shown in the first embodiment.
[0054]
In FIG. 5, the arrangement of the positive side terminals and the negative side terminals of the connection conductor is in the order of the negative side terminal 212, the positive side terminal 112, the positive side terminal 113, the negative side terminal 213, the negative side terminal 214, and the positive side terminal 114. Thus, the capacitor element pair is housed in the capacitor case 4-1. That is, the adjacent portions of the element pair are configured so that the positive and negative polarities of the connection conductors are the same.
[0055]
According to this embodiment having such a configuration, the same effects as those of the first embodiment can be obtained, and the following special effects can also be obtained. That is, when the capacitor module 1-1 is configured in this way, the positive terminal 112 and the positive terminal 113, and the negative terminal 213 and the negative terminal 214 have the same polarity, so that they are separated from each other for air insulation. No need to secure. Therefore, the distance between the terminals can be reduced, and as a result, the volume of the capacitor module 1-1 can be reduced. That is, the inverter device can be miniaturized.
[0056]
(Fourth embodiment: corresponding to claim 6)
Next, a fourth embodiment of the present invention will be described with reference to FIG. 6 in which the same parts as those in FIGS.
[0057]
FIG. 6 is also a three-dimensional view showing the capacitor module 1-3 in the inverter device shown in the first embodiment, as in FIGS. In FIG. 6, the capacitor case 4-3 is formed with partition walls 41 and 42 for partitioning the element pairs. The partition walls 41 and 42 are integrally formed by, for example, an injection molding method in the process of manufacturing the capacitor case 4-3.
[0058]
When the capacitor module 1-3 is configured in this way, the capacitor case 4-3 is formed with three small chambers, and one pair of capacitor element pairs is housed in each chamber, each of which is formed of a sealing material (not shown). It will be insulation molded. In the first embodiment, the entire capacitor case 4-1 is insulation-molded with the sealing material 8, whereas in this embodiment, the volume of 1/3 of the entire case is insulation-molded at three locations. Become.
[0059]
Further, since there are two partition walls 41 and 42, the volume of one insulating mold is 1/3, and the bonding area between the case 4-3 and the sealing material 8 is the conventional example shown in FIG. Compared to the example or the previous embodiment, it increases by both surfaces of the partition walls 41 and 42.
[0060]
According to this embodiment having such a configuration, the same operational effects as those of the previous embodiment can be obtained, and the following special effects can also be obtained. That is, the adhesive strength of the sealing material 8 to the capacitor case 4 is further increased, and the adhesive portion is deteriorated with time even when the ambient temperature of the capacitor module 1-3 is increased or the temperature cycle change amount during use is increased. This reduces the possibility of cracking. As a result, the possibility of hindering the insulation performance of the element is reduced, and the life of the element can be shortened and the deterioration with time of the sealing material can be suppressed, so that the reliability of the inverter device is improved.
[0061]
(Fifth embodiment: corresponding to claim 7)
Next, a fifth embodiment of the present invention will be described with reference to FIG. 7 in which the same parts as those in FIG.
[0062]
FIG. 7 is also a three-dimensional view showing a portion of the capacitor module 1 in the inverter device, similarly to FIGS. 4 to 6.
[0063]
In FIG. 7, in the capacitor case 4-4, in addition to the partition walls 41 and 42 for partitioning the element pairs, the elements connected in parallel in the element pair are partially connected in the vicinity of the opening surface of the capacitor case 4-4. Partial partition walls 43A, 43B, 44A, 44B, 45A, and 45B are formed for partitioning.
[0064]
Similar to the partition walls 41 and 42 of the fourth embodiment, these partial partition walls 43A, 43B, 44A, 44B, 45A, and 45B are also integrally formed by an injection molding method or the like in the process of manufacturing the capacitor case 4-4. .
[0065]
According to this embodiment having such a configuration, the same operational effects as those of the previous embodiment can be obtained, and the following special effects can also be obtained. That is, when the capacitor module is configured as in the present embodiment, the bonding area between the case 4-4 and the sealing material can be further increased by the amount of the partial partition wall in the vicinity of the opening surface of the capacitor case 4-4. As a result, the possibility of cracking from the bonded portion due to deterioration over time is further reduced, and the possibility of impeding the insulation performance of the element is further reduced, further reducing the element life and deterioration over time of the sealing material. Therefore, the reliability of the inverter device is increased.
[0066]
(Sixth embodiment: corresponding to claim 8)
Next, a sixth embodiment of the present invention will be described with reference to FIG.
[0067]
FIG. 8 is also a three-dimensional view showing a part of the capacitor module 1 in the inverter device taken out similarly to FIGS. 4 to 7. In FIG. 8, the envelope 4A of the capacitor case 4 is formed of a material having a high thermal conductivity such as aluminum, and the capacitor terminal block 4B is formed of an insulating material such as PPS resin.
[0068]
The capacitor pair is insulated and molded with a sealing material (not shown) in the capacitor case envelope 4A.
[0069]
According to this embodiment having such a configuration, the same operational effects as those of the previous embodiment can be obtained, and the following special effects can also be obtained. That is, when the capacitor module is configured as in the present embodiment, the thermal conductivity of the capacitor case envelope 4A is large, so that the temperature difference on the surface of the envelope is reduced and the effective heat radiation area is increased. For this reason, the temperature rise of the capacitor element is reduced, and as a result, the life of the element is extended. In this respect, the reliability of the inverter device is improved.
[0070]
(Seventh embodiment: corresponding to claim 9)
Next, a seventh embodiment of the present invention will be described with reference to FIG.
[0071]
FIG. 9 is also a three-dimensional view of the inverter device of the seventh embodiment, similar to FIGS. 4 to 8. As in the case of the sixth embodiment, the capacitor case envelope 4A is formed of a material having a high thermal conductivity, the capacitor positive / negative terminal block 4B is formed of an insulating material, and the capacitor module 1 is cooled. It is mounted on vessel 3. In FIG. 9, it is mounted on the cooler 3 together with the power semiconductor module 2. However, a separate cooler may be prepared.
[0072]
According to this embodiment having such a configuration, the same operational effects as those of the previous embodiment can be obtained, and the following special effects can also be obtained. That is, when the capacitor module is mounted on the cooler as in the present embodiment, the heat generated by the capacitor element can be radiated by the cooler 3 via the sealing material (not shown) and the case envelope 4A. Therefore, the temperature difference on the envelope surface is reduced, and the effective heat radiation area is increased. As a result, the temperature rise of the capacitor element can be greatly reduced, and the life of the element is further increased.
[0073]
Note that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention at the stage of implementation. In addition, the embodiments may be appropriately combined as much as possible, and in that case, combined effects can be obtained. Furthermore, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, when an invention is extracted by omitting some constituent elements from all the constituent elements shown in the embodiment, when the extracted invention is implemented, the omitted part is appropriately supplemented by a well-known common technique. It is what is said.
[0074]
【The invention's effect】
As described above, according to the present invention, the inductance parasitic to the wiring portion from the DC smoothing capacitor to the power semiconductor element is reduced, the life of the element incorporated in the smoothing capacitor is increased, and the sealing material of the element is increased. A structure that can suppress deterioration over time can be realized, and a small and highly reliable inverter device can be provided.
[Brief description of the drawings]
FIG. 1 is a three-dimensional configuration diagram of an inverter device according to a first embodiment of the present invention.
FIG. 2 is an exploded view of the inverter device according to the first embodiment of the present invention.
FIG. 3 is an exploded view showing a capacitor element for one phase housed in the capacitor module according to the first embodiment of the present invention, a positive-side connection conductor, and a negative-side connection conductor.
FIG. 4 is a three-dimensional view showing a part of a capacitor module in an inverter device according to a second embodiment of the present invention.
FIG. 5 is a three-dimensional view showing a part of a capacitor module in an inverter device according to a third embodiment of the present invention.
FIG. 6 is a three-dimensional view showing a part of a capacitor module in an inverter device according to a fourth embodiment of the present invention.
FIG. 7 is a three-dimensional view showing a part of a capacitor module in an inverter device of a fifth embodiment of the present invention.
FIG. 8 is a three-dimensional view showing a capacitor module part in an inverter device according to a sixth embodiment of the present invention;
FIG. 9 is a three-dimensional configuration diagram of an inverter device according to a seventh embodiment of the present invention.
FIG. 10 is a circuit diagram showing portions of a DC smoothing circuit and an inverse conversion circuit of a three-phase inverter device.
FIG. 11 is a circuit diagram showing portions of a DC smoothing circuit and an inverse conversion circuit of a three-phase inverter device in consideration of the device configuration.
FIG. 12 is a three-dimensional configuration diagram of a conventional inverter device.
FIG. 13 is an exploded view of a conventional inverter device.
FIG. 14 is an exploded view of a capacitor module portion in a conventional inverter device.
FIG. 15 is a plan view showing the inside of a capacitor module in a conventional inverter device.
FIG. 16 is a plan view showing the shape of external wiring from a capacitor to an element in a conventional inverter device.
[Explanation of symbols]
1-1, 1-2, 1-3, 1-4 ... capacitor module, 2 ... power semiconductor module, 3 ... heat sink, 4-1, 4-2, 4-3, 4-4 ... capacitor case, 4A ... Envelope, 4B: Capacitor terminal block, 5-1, 5-2 ... Positive side conductor, 6-1, 6-2 ... Negative side conductor, 7 ... Hex bolt, 8 ... Sealing material, 10 ... DC smoothing capacitor 11A to 11C, 12A to 12C, 13A to 13C ... Capacitor element, 21 to 26 ... Switching device, 31 to 36 ... Diode, 41, 42 ... Partition, 43A, 43B, 44A, 44B, 45A, 45B ... Partial partition, 50, 52-1, 52A, 53-1, 53A, 54-1, 54A ... Positive connection conductor, 60, 62-1, 62A, 63-1, 63A, 64-1, 64A ... Negative connection conductor, 101, 112, 11 , 114 ... Capacitor positive side terminal, 101A, 112A, 113A, 114A ... Capacitor positive side connection part, 102, 103, 104 ... Element positive side terminal, 102A, 103A, 104A ... Element positive side connection part, 201, 212, 213 214, capacitor negative side terminals, 201A, 212A, 213A, 214A ... capacitor negative side connection parts, 202, 203, 204 ... element negative side terminals, 202A, 203A, 204A ... element negative side connection parts.

Claims (9)

In an inverter device comprising a power semiconductor module and a capacitor module, and connecting between the DC terminals of the semiconductor module and the capacitor module,
The capacitor module includes a plurality of capacitor elements, a positive and negative connection conductor having one end connected to the plurality of capacitor elements in parallel and having one end as a capacitor positive / negative terminal, and the positive and negative connection conductors and the plurality of capacitor elements. With multiple pairs,
An inverter device comprising a positive and negative insulating laminated conductor that connects between the positive and negative terminals of the capacitor and the positive and negative terminals of the semiconductor module. The inverter device according to claim 1, wherein the semiconductor module includes a plurality of phases and has positive and negative terminals for each phase, and the capacitor module includes a number of element pairs corresponding to the phases. The inverter device according to claim 1, wherein the capacitor module includes a capacitor case containing the plurality of element pairs. 4. The inverter according to claim 1, wherein the insulating multilayer conductor is built in the capacitor case, and one end of the connection conductor is directly connected to the insulating multilayer conductor in the capacitor case. 5. apparatus. 5. The inverter device according to claim 1, wherein the plurality of element pairs are housed in the capacitor case so that adjacent connection conductors have the same positive / negative polarity. 6. The inverter device according to claim 1, wherein a partition wall for partitioning the element pairs is formed in the capacitor case. The inverter device according to claim 6, wherein a partial partition wall for partitioning elements connected in parallel in the element pair is formed in the vicinity of an opening surface of the capacitor case. 8. The inverter device according to claim 1, wherein the capacitor case is formed of a material having a high thermal conductivity in the envelope, and the capacitor terminal block is formed of an insulating material. The inverter device according to claim 8, wherein the capacitor case is mounted on a cooler.

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