CN213243833U - Many level of modularization current regulator - Google Patents
Many level of modularization current regulator Download PDFInfo
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- CN213243833U CN213243833U CN202021894178.2U CN202021894178U CN213243833U CN 213243833 U CN213243833 U CN 213243833U CN 202021894178 U CN202021894178 U CN 202021894178U CN 213243833 U CN213243833 U CN 213243833U
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Abstract
The utility model discloses a many level current ware of modularization, each looks of topological structure divide into two upper and lower bridge arms, and each bridge arm is established ties by the same quantity and the identical power submodule piece of structure and forms, and every power submodule piece comprises four insulated gate bipolar transistor full-bridge parallel connection direct current energy storage capacitor, and the inductance is kept apart to the side series connection one of exchanging. The upper bridge arm and the lower bridge arm are connected through two bridge arm isolation inductors, an alternating current input port is arranged in the middle of each isolation inductor, and output ends of the bridge arms are connected together to form a common direct current bus. The modularized multi-level rectifier adopts a full-bridge sub-module structure, a full-bridge circuit is formed by insulated gate bipolar transistors of four anti-parallel bipolar freewheeling diodes, the voltage-withstanding capability is far greater than that of a half-bridge circuit formed by insulated gate bipolar transistors of two anti-parallel bipolar freewheeling diodes through the voltage division of a power tube and a modularized multi-level topological structure, and the modularized multi-level rectifier is suitable for a high-power circuit.
Description
Technical Field
The utility model belongs to the technical field of power electronics, concretely relates to many level current wares of modularization.
Background
The capacity and voltage grade of the high-voltage direct current transmission system are higher, and are limited by the capacity of power electronic devices, a core component of the high-voltage direct current transmission system, namely a voltage source converter (a two-level topological structure and a three-level topological structure with the devices directly connected in series are adopted, but the output voltage of the topological structure is low in subharmonic content, a filter and a transformer which are large in size are needed, and the dynamic voltage-sharing problem of the devices connected in series also exists at the same time, although the harmonic problem can be solved to a certain extent by the diode box potential type multi-level converter and the energy storage capacitor box potential type multi-level converter, the topological structure of the converter becomes very complex with the increase of the number of the levels, and the realization of a control system is not facilitated, the modular multi-level converter has the characteristics of a cascade converter, is a modular structure, is easy to realize the number of the, is a special form of cascade. The required power and voltage levels can be obtained by increasing or decreasing the number of the series combinations of the sub-modules and using a reasonable control strategy, and the characteristics of four-quadrant operation and the like can be easily realized. Because the current and the power factor of the grid side of the rectifier are controllable, namely the grid side of the rectifier has the characteristic of a controlled current source, the rectifier can be popularized and applied to application occasions such as active power filtering and reactive compensation, high-voltage direct-current transmission, grid-connected power generation of wind energy and the like. Meanwhile, the purpose of outputting higher level number is also conveniently realized. The modularized multi-level rectifier can effectively reduce the switching loss of an insulated gate bipolar transistor, can output multi-level voltage, and can greatly reduce harmonic wave and high-frequency interference factors, so that the obtained smoother voltage waveform is close to an ideal sinusoidal voltage waveform, and a large-capacity filter is prevented from being used on the network side for eliminating the harmonic wave. The modular multilevel topological structure has the advantages of better meeting the requirements of direct current transmission on reliability, safety and stability, and is a very suitable multilevel topological structure.
Through retrieval, publication number CN 203872074U discloses a design of a single-phase modular multilevel rectifier, which comprises a first ac input power supply, a second ac input power supply, a first isolation inductor, a second isolation inductor, a first bridge arm, a second bridge arm and a rectifying load; the first bridge arm and the second bridge arm are formed by connecting an upper bridge arm, an upper middle bridge arm, a lower upper bridge arm, a third isolation inductor and a fourth isolation inductor in series; the upper bridge arm, the middle-upper bridge arm and the lower-upper bridge arm of the first bridge arm and the second bridge arm are formed by connecting N power sub-modules in series. The inverter adopts carrier phase-shift PWM control, 2 input alternating current power supplies are converted into 2 paths of 2N + l level alternating current inputs, power is supplied to a load after rectification and superposition, and voltage stress borne by each switch tube in the modular multilevel power submodule is only 1/N of the voltage of a direct current power supply, so that the voltage-sharing problem of the switch tubes is well solved, and the modular multilevel power submodule is suitable for single-phase alternating current power supply input.
However, the technical scheme is only suitable for single-phase alternating current power input, and the sub-modules adopt half-bridge switching power supplies, so that the defects that the voltage withstanding capability of the switching tubes is not high, the fault ride-through capability is poor, the output waveform modulation ratio cannot be larger than 1 and the like exist.
SUMMERY OF THE UTILITY MODEL
The utility model discloses synthesize and consider the problem that obtains stable direct current busbar voltage and obtain unit power factor at the alternating current input side at the direct current output side, aim at disclosing the many level current wares of a modularization.
In order to achieve the above object, the utility model provides a following technical scheme:
a modular multi-level rectifier comprises a first isolation inductor, a second isolation inductor, a third isolation inductor, a fourth isolation inductor, a fifth isolation inductor, a sixth isolation inductor, a first bridge arm, a second bridge arm, a third bridge arm, a fourth bridge arm, a fifth bridge arm and a sixth bridge arm; the bridge arms are formed by connecting n power sub-modules in series; the first bridge arm and the first isolation inductor are connected in series to form a first upper bridge arm, the second bridge arm and the second isolation inductor are connected in series to form a second upper bridge arm, the third bridge arm and the third isolation inductor are connected in series to form a third upper bridge arm, the fourth bridge arm and the fourth isolation inductor are connected in series to form a first lower bridge arm, the fifth bridge arm and the fifth isolation inductor are connected in series to form a second lower bridge arm, and the sixth bridge arm and the sixth isolation inductor are connected in series to form a third lower bridge arm; the upper bridge arm I and the lower bridge arm are connected in series to form a switch group I, the upper bridge arm II and the lower bridge arm II are connected in series to form a switch group II, and the upper bridge arm III and the lower bridge arm III are connected in series to form a switch group III; the first switch group, the second switch group and the third switch group are connected in parallel to form the modular multi-level rectifier.
The modularized multi-level rectifier can realize three-phase alternating current input.
The power sub-module comprises a first insulated gate bipolar transistor, a second insulated gate bipolar transistor, a third insulated gate bipolar transistor, a fourth insulated gate bipolar transistor, an energy storage capacitor and an isolation inductor; the positive electrode of the energy storage capacitor is connected with the collector electrode of the first insulated gate bipolar transistor and the collector electrode of the third insulated gate bipolar transistor; the negative electrode of the energy storage capacitor is connected with the emitter electrode of the second insulated gate bipolar transistor and the emitter electrode of the fourth insulated gate bipolar transistor; the first insulated gate bipolar transistor and the second insulated gate bipolar transistor form a first series circuit, and the third insulated gate bipolar transistor and the fourth insulated gate bipolar transistor form a second series circuit; the first series circuit, the second series circuit and the energy storage capacitor are connected in parallel to form a typical full-bridge circuit, an isolation inductor is connected in series with an alternating current input side, and modularized multi-level voltage waveforms and rectifier output waveforms are effectively isolated.
When the first insulated gate bipolar transistor, the second insulated gate bipolar transistor, the third insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are turned off at the same time, the sub-module is in a locking state, and in the locking state, if current flows from the positive electrode, the energy storage capacitor is charged, the current flows from the negative electrode, and the energy storage capacitor is discharged; when the first insulated gate bipolar transistor and the third insulated gate bipolar transistor are conducted, the second insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are turned off, the submodule is in a cutting state, and the energy storage capacitor is always bypassed. When the first insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are switched on, the second insulated gate bipolar transistor and the third insulated gate bipolar transistor are switched off, the sub-module is in a positive input state, and in the positive input state, if current flows from the positive electrode, the energy storage capacitor is charged, the current flows from the negative electrode, and the energy storage capacitor is discharged; when the first insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are turned off, the second insulated gate bipolar transistor and the third insulated gate bipolar transistor are turned on, the sub-module is in a negative input state, and in the negative input state, if current flows from the positive electrode, the energy storage capacitor is charged, the current flows from the negative electrode, and the energy storage capacitor is discharged.
From above, the full-bridge submodule possesses four kinds of operating condition of positive input, negative input, bypass and shutting, has compared half-bridge submodule piece and has had an extra negative input state, from this brings one more control dimension for the control of modularization multilevel, and the modulation ratio m of output waveform can exceed 1. In addition, compared with a half-bridge submodule, when the control part detects that the current exceeds a threshold value, an insulated gate bipolar transistor protection mechanism is triggered, all insulated gate bipolar transistors are turned off, and the full-bridge submodule enters a locking state at the moment. When the full-bridge submodule is in a locking state, direct-current short-circuit current must flow from the direct-current capacitor C to the insulated gate bipolar transistor VT2 through the insulated gate bipolar transistor VT3, and the voltage of the capacitor is just opposite to the flowing direction of fault current, namely the discharge current of the capacitor is offset from the fault current. Therefore, when a fault occurs, the rectifier can absorb the fault current by using the full-bridge circuit capacitor, and the circuit is ensured not to vibrate.
An alternating current positive input point is arranged between the first insulated gate bipolar transistor and the third insulated gate bipolar transistor; and an alternating current negative electrode input point is arranged between the second insulated gate bipolar transistor and the fourth insulated gate bipolar transistor.
Each insulated gate bipolar transistor in the power sub-module is formed by connecting an insulated gate field effect transistor in anti-parallel with a bipolar freewheeling diode.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the pressure resistance is strong. The modularized multi-level rectifier adopts a full-bridge sub-module structure, a full-bridge circuit is formed by insulated gate bipolar transistors of four anti-parallel bipolar freewheeling diodes, the voltage-withstanding capability is far greater than that of a half-bridge circuit formed by insulated gate bipolar transistors of two anti-parallel bipolar freewheeling diodes through the voltage division of a power tube and a modularized multi-level topological structure, and the modularized multi-level rectifier is suitable for a high-power circuit.
2. The modulation ratio m of the output waveform may exceed 1. The modular multilevel inverter adopts a full-bridge submodule structure, and the modular multilevel control has more control dimensionalities through the unique negative input working state of a full-bridge circuit.
3. The three-phase unbalanced operation capability is strong. The modular multi-level rectifier has symmetrical three-phase structure and completely identical working principle of each phase, and each phase can be independently controlled during system operation, so that when one phase of the system fails, other two phases can still work normally.
4. The fault ride-through capability is strong. The modularized multi-level rectifier adopts a full-bridge sub-module structure, a large number of direct-current energy storage capacitors exist, when the system operates normally, the energy storage capacitors store a large number of energy, and when the control part detects that the current exceeds a threshold value and triggers an insulated gate bipolar transistor protection mechanism, the energy storage capacitors can absorb fault current, so that the circuit is ensured not to vibrate, and the system still works normally.
5. Many level rectifier of modularization has public direct current bus, and through control, direct current bus's voltage and electric current can be adjusted moreover.
6. The utility model discloses a high modular structure. The power sub-modules in the topology have the same structure, the voltage boosting is realized through the cascade connection of the power sub-modules, the dynamic and static voltage equalizing problems caused by the direct serial-parallel connection of the power switching devices in the direct serial-parallel connection technology are avoided, the capacity of a rectification system is conveniently improved, the redundancy design is convenient, and the packaging production is very favorable.
7. The utility model discloses the engineering of being convenient for realizes. The modularized power sub-modules are convenient for hardware layout, and the system structure is tidy. And the modularized multi-level has low requirements on cables in a main circuit of the system, so that the layout and connection of power modules are facilitated, and the structural design is also facilitated.
Drawings
Fig. 1 is a modular multilevel current transformer topology;
FIG. 2 is a circuit diagram of a modular multilevel current transformer sub-module;
FIG. 3 is a bridge arm control block diagram;
fig. 4 a voltage sampling circuit.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, a modular multilevel rectifier includes a first isolation inductor L1A second isolation inductor L2A third isolation inductor L3And a fourth isolation inductor L4The fifth isolation inductor L5And a sixth isolation inductor L6First bridge arm Q1And a second arm Q2And a third bridge arm Q3And a fourth arm Q4And a fifth arm Q5And a sixth arm Q6(ii) a The bridge arms are all provided with n power sub-modules SM1，SM2，…，SMnAre connected in series; the first bridge arm Q1And a first isolation inductor L1An upper bridge arm I and a second bridge arm Q are formed in series2And a second isolation inductor L2An upper bridge arm two and a third bridge arm Q are formed in series3And a third isolation inductor L3An upper bridge arm three and a fourth bridge arm Q are formed in series4And a fourth isolation inductor L4A first lower bridge arm and a fifth lower bridge arm Q connected in series5And a fifth isolation inductor L5A second lower bridge arm and a sixth bridge arm Q are formed in series6And a sixth isolation inductor L6A third lower bridge arm is formed by connecting the lower bridge arms in series; the upper bridge arm I and the lower bridge arm I are connected in series to form a switch group I K1The upper bridge arm II and the lower bridge arm II are connected in series to form a switch group II K2The upper bridge arm III and the lower bridge arm III are connected in series to form a switch group III K3(ii) a The switch group is K1And a switch group II K2Three switches K3And the parallel connection forms a modular multi-level rectifier.
The first isolation inductor L1And a fourth isolation inductor L4The middle is an A-phase alternating current input port, and the second isolation inductor L2And a fifth isolation inductor L5The middle is a B-phase alternating current input port, and the third isolation inductor L3And a sixth isolation inductor L6The middle part is a C-shaped alternating current input port, and the output ends of the upper bridge arm and the lower bridge arm are connected together to form a common direct current bus.
As shown in fig. 2, the power sub-module SM1，SM2，…，SMnEach comprises a first insulated gate bipolar transistor VT1A second insulated gate bipolar transistor VT2A third insulated gate bipolar transistor VT3And a fourth insulated gate bipolar transistor VT4The energy storage capacitor C and the isolation inductor L; the anode of the energy storage capacitor C and the first insulated gate bipolar transistor VT1Collector electrode of (2), third insulated gate bipolar transistor VT3The collector is connected; the negative electrode C of the energy storage capacitor and the emitting electrode VT of the second insulated gate bipolar transistor2And a fourth insulated gate bipolar transistor VT4Connecting an emitter; the first IGBT VT1Bipolar with second insulated gateTransistor VT2Forming a first series circuit, the third IGBT VT3And a fourth insulated gate bipolar transistor VT4Forming a second series circuit; the first series circuit and the second series circuit are connected with the energy storage capacitor C in parallel to form a typical full-bridge circuit, and the alternating current input side is connected with an isolation inductor L in series.
The full-bridge circuit has four working modes, namely when the first insulated gate bipolar transistor VT1A second insulated gate bipolar transistor VT2A third insulated gate bipolar transistor VT3And a fourth insulated gate bipolar transistor VT4Simultaneous turn-off, submodule SM1，SM2，…， SMnThe energy storage capacitor C is in a locking state, if current flows in from the positive electrode, the energy storage capacitor C is charged, current flows in from the negative electrode, and the energy storage capacitor C is discharged; when the first IGBT VT1A third insulated gate bipolar transistor VT3Conducting, second IGBT VT2And a fourth insulated gate bipolar transistor VT4Off, submodule SM1， SM2，…，SMnIn the cut-off state, the energy storage capacitor C is always bypassed. When the first IGBT VT1And a fourth insulated gate bipolar transistor VT4Conducting, second IGBT VT2A third insulated gate bipolar transistor VT3Off, submodule SM1，SM2，…，SMnIn the positive input state, if current flows from the positive electrode, the energy storage capacitor C is charged, current flows from the negative electrode, and the energy storage capacitor C is discharged; when the first IGBT VT1And the fourth IGBT turn-off VT4Second insulated gate bipolar transistor VT2A third insulated gate bipolar transistor VT3Conducting, submodule SM1，SM2，…，SMnIn the negative input state, if a current flows from the positive electrode, the energy storage capacitor C is charged, and a current flows from the negative electrode, the energy storage capacitor C is discharged.
The first insulated gate bipolar transistorVT1And a third insulated gate bipolar transistor VT3An alternating current positive input point is arranged between the two electrodes; the second insulated gate bipolar transistor VT2And a fourth insulated gate bipolar transistor VT4The input point of the alternating current negative pole is arranged between the two points.
The power sub-module SM1，SM2，…，SMnIn each of the insulated gate bipolar transistors VT1，VT2，VT3，VT4Each of the two diodes is composed of an insulated gate field effect transistor and a bipolar freewheeling diode connected in anti-parallel.
As shown in the block diagram of the bridge arm energy sharing control in fig. 3, the control method of the modular multi-level rectifier adopts the conventional sub-module capacitor voltage stabilizing control, wherein
The reference value of the sub-module capacitor voltage is generally set as the rated working voltage;
is the average value of all sub-module capacitor voltages of each phase; i.e. ipa、inaIs the current of the upper and lower bridge arms, izaIs a circulating current which is a circulating current,
the difference between the submodule capacitor voltage average value and the reference value is a circulating current reference obtained after a PI controller; finally, the difference between the circulating current and the reference is obtained by a PI controller to obtain the reference of the modulation wave
As shown in the sampling circuit of fig. 4, the input terminal is composed of a 0.1K resistor R1 series-parallel connection 102 capacitor C1 and a 0.1uF capacitor C2, in the upper-end output circuit, a U1A operational amplifier pin 3 is directly connected with a U2A operational amplifier pin 3, a U1A operational amplifier pin 2 is connected with a U3B operational amplifier pin 5 through a 10K resistor R3, and a node between the resistor R3 and the U3B operational amplifier pin 5 is grounded through a 10K resistor R8. The U3B operational amplifier pin 6 is grounded through a 10K resistor R2 and connected with an output port UsL _ D _ previous through a 10K resistor R6 respectively to output an original signal; in the lower output end circuit, a U2A operational amplifier pin 2 is connected with a U4B operational amplifier pin 5 through a forward diode D2 and a 10K resistor R5 respectively, and is connected with a U4B operational amplifier pin 6 through a reverse diode D1 and a 10K resistor R4, and a node between the resistor R5 and the U4B operational amplifier pin 5 is grounded through a 10K resistor R7. The U4B op-amp pin 6 is connected to the output terminal UsL _ P through a 5K resistor R9, and outputs an amplified signal. In the figure, four operational amplifiers U1A, U2A, U3B and U4B are all in LM358 type, each operational amplifier pin 4 is connected with a-15V power supply, and a pin 8 is connected with a +15V power supply.
When the modular multi-level rectifier operates, the instantaneous value of the capacitance voltage of each sub-module is sampled and then averaged to obtain the capacitance voltage
Then, a PI regulator is used for tracking a rated working voltage value, PI output is used as a reference of the circulating current, the energy of upper and lower bridge arms is equally divided by controlling the size of the circulating current, and meanwhile, the size of the circulating current can be restrained. When the average value of the sub-module capacitor voltage is larger than the rated working voltage, the circulating current reference output by the PI regulator is reduced, and the charging current on the bridge arm is reduced, so that the charging amplitude of the sub-module capacitor voltage is reduced. When the sub-module capacitor voltage average value is smaller than the reference value, the circulating current is increased, the charging current is increased, and the charging power is increased, so that the sub-module capacitor voltage average value is increased.
The above description is the preferred embodiment of the present invention, and all the equivalent changes and modifications made in accordance with the claims of the present invention shall belong to the coverage of the present invention.
Claims (6)
1. A modular multilevel rectifier comprising: the bridge comprises a first isolation inductor, a second isolation inductor, a third isolation inductor, a fourth isolation inductor, a fifth isolation inductor, a sixth isolation inductor, a first bridge arm, a second bridge arm, a third bridge arm, a fourth bridge arm, a fifth bridge arm and a sixth bridge arm; the bridge arms are formed by connecting n power sub-modules in series; the first bridge arm and the first isolation inductor are connected in series to form a first upper bridge arm, the second bridge arm and the second isolation inductor are connected in series to form a second upper bridge arm, the third bridge arm and the third isolation inductor are connected in series to form a third upper bridge arm, the fourth bridge arm and the fourth isolation inductor are connected in series to form a first lower bridge arm, the fifth bridge arm and the fifth isolation inductor are connected in series to form a second lower bridge arm, and the sixth bridge arm and the sixth isolation inductor are connected in series to form a third lower bridge arm; the upper bridge arm I and the lower bridge arm are connected in series to form a switch group I, the upper bridge arm II and the lower bridge arm II are connected in series to form a switch group II, and the upper bridge arm III and the lower bridge arm III are connected in series to form a switch group III; the first switch group, the second switch group and the third switch group are connected in parallel to form the modular multi-level rectifier.
2. The modular multilevel current transformer of claim 1, wherein: an A-phase alternating current input port is arranged between the first isolation inductor and the fourth isolation inductor, a B-phase alternating current input port is arranged between the second isolation inductor and the fifth isolation inductor, a C-phase alternating current input port is arranged between the third isolation inductor and the sixth isolation inductor, and output ends of the upper bridge arm and the lower bridge arm are connected together to form a common direct current bus.
3. The modular multilevel current transformer of claim 1, wherein: the power sub-module comprises a first insulated gate bipolar transistor, a second insulated gate bipolar transistor, a third insulated gate bipolar transistor, a fourth insulated gate bipolar transistor, an energy storage capacitor and an isolation inductor; the positive electrode of the energy storage capacitor is connected with the collector electrode of the first insulated gate bipolar transistor and the collector electrode of the third insulated gate bipolar transistor; the negative electrode of the energy storage capacitor is connected with the emitter electrode of the second insulated gate bipolar transistor and the emitter electrode of the fourth insulated gate bipolar transistor; the first insulated gate bipolar transistor and the second insulated gate bipolar transistor form a first series circuit, and the third insulated gate bipolar transistor and the fourth insulated gate bipolar transistor form a second series circuit; the first series circuit and the second series circuit are connected with the energy storage capacitor in parallel to form a full-bridge circuit, and the alternating current input side is connected with an isolation inductor in series.
4. A modular multilevel current transformer according to claim 3 wherein: an alternating current positive input point is arranged between the first insulated gate bipolar transistor and the third insulated gate bipolar transistor; and an alternating current negative electrode input point is arranged between the second insulated gate bipolar transistor and the fourth insulated gate bipolar transistor.
5. The modular multilevel current transformer of claim 4, wherein: the power sub-module comprises four working states:
the first insulated gate bipolar transistor, the second insulated gate bipolar transistor, the third insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are turned off at the same time, the sub-module is in a locking state, and in the locking state, if current flows from the positive electrode, the energy storage capacitor is charged, the current flows from the negative electrode, and the energy storage capacitor is discharged;
the first insulated gate bipolar transistor and the third insulated gate bipolar transistor are switched on, the second insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are switched off, the submodule is in a cutting state, and the energy storage capacitor is always bypassed;
the first insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are switched on, the second insulated gate bipolar transistor and the third insulated gate bipolar transistor are switched off, the sub-module is in a positive input state, and in the positive input state, if current flows from a positive electrode, the energy storage capacitor is charged, the current flows from a negative electrode, and the energy storage capacitor is discharged;
the first insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are turned off, the second insulated gate bipolar transistor and the third insulated gate bipolar transistor are turned on, the sub-module is in a negative input state, and in the negative input state, if current flows from the positive electrode, the energy storage capacitor is charged, the current flows from the negative electrode, and the energy storage capacitor is discharged.
6. The modular multilevel current transformer of claim 1, wherein: each insulated gate bipolar transistor in the power sub-module is formed by connecting an insulated gate field effect transistor in an anti-parallel mode with a bipolar freewheeling diode.
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| CN202021894178.2U CN213243833U (en) | 2020-09-02 | 2020-09-02 | Many level of modularization current regulator |
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