CN202633322U - Negative pressure energy storage follow current module - Google Patents

Negative pressure energy storage follow current module Download PDF

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Publication number
CN202633322U
CN202633322U CN 201220282502 CN201220282502U CN202633322U CN 202633322 U CN202633322 U CN 202633322U CN 201220282502 CN201220282502 CN 201220282502 CN 201220282502 U CN201220282502 U CN 201220282502U CN 202633322 U CN202633322 U CN 202633322U
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CN
China
Prior art keywords
negative pressure
energy storage
circuit unit
control circuit
diode
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Expired - Fee Related
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CN 201220282502
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Chinese (zh)
Inventor
边晓晖
张启明
边佶
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JIANGSU PAI TE HIGH-TECH Co Ltd
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JIANGSU PAI TE HIGH-TECH Co Ltd
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Priority to CN 201220282502 priority Critical patent/CN202633322U/en
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Publication of CN202633322U publication Critical patent/CN202633322U/en
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Abstract

The utility model relates to a negative pressure energy storage follow current module and belongs to the technical field of solar application. The module comprises an over-two-stage negative pressure drive follow current control circuit unit, wherein the negative pressure drive follow current control circuit unit comprises a pair of metal oxide semiconductor (MOS) transistors; gates and sources of the two MOS transistors are respectively and oppositely connected; the drains of the two MOS transistors are connected through a negative pressure recognition diode and an energy storage capacitor; an anode of the negative pressure recognition diode is led out of a low-potential end; a cathode of the negative pressure recognition diode penetrates through the energy storage capacitor and is led out of a high-potential end; a lead is arranged between the negative pressure recognition diode and the energy storage capacitor and is connected with the joint of the gates of the two MOS transistors through a voltage detection chip; and the over-two-stage negative pressure drive follow current control circuit unit is respectively connected with a high-potential end and a low-potential end of a corresponding battery unit in a serial photovoltaic battery pack by taking a previous-stage low-potential end as a latter-stage high-potential end. When the battery unit has abnormal reverse voltage, the two MOS transistors of the negative pressure drive follow current control circuit unit are conducted, so that the negative pressure follow current function is realized, and the whole photovoltaic power generation system is prevented from being influenced.

Description

Negative pressure energy storage afterflow module
Technical field
The utility model relates to a kind of photovoltaic cell bypass apparatus module, and especially a kind of negative pressure energy storage afterflow module belongs to application of solar.
Background technology
In the photovoltaic generating system that has been brought to completion, As time goes on and the variation of external environment, can cause photovoltaic group string inner occur unbalance.In photovoltaic group string, because of a photovoltaic module by shade or leaf or birds droppings covers and or aging, the generating capacity that can cause whole photovoltaic group string is significantly down.
Single-phase, the three-phase grid-connected inverter maximum power voltage-tracing scope of existing photovoltaic generating system are respectively 220VDC-380VDC and 450VDC-820VDC; Therefore determined photovoltaic module not use by the monolithic connecting system; Need to be in series, promptly form a photovoltaic group string that meets the requirement of inverter access conditions by some photovoltaic modulies.Photovoltaic group string is by 1,2 ..., N-1, N, amount to the series connection of N piece photovoltaic module.The voltage of photovoltaic group string is the summation of these photovoltaic module voltages, promptly U total=U1+U2+ ... + UN-1+UN; The electric current of photovoltaic group string equates with the electric current of these photovoltaic modulies, promptly I total=I1=I2=...=IN-1=IN.Be not difficult to find out that photovoltaic group string output current decides by wherein providing the minimum photovoltaic module of electric current.
For example; The pv grid-connected plant of a 250kWP; Adopt monocrystalline silicon photovoltaic module, 1 SG250K3 combining inverter of 1000 250WP; (450V~820V), each photovoltaic tandem is by 20 photovoltaic module series design, and the pv grid-connected plant of 250kW is 50 battery tandems altogether according to the MPPT maximal power tracing point operating voltage range of inverter.If 1 photovoltaic module is arranged in certain photovoltaic tandem, covered by shade or leaf or birds droppings, operating current drops to 2.13A by 7.13A.The power of photovoltaic group string can drop to 1495WP by 5000WP, can cause the generating capacity of whole photovoltaic group string to descend about 70%.
The two ends of inefficacy photovoltaic module present reverse system's total voltage.This electric energy of 70% promptly produces great amount of heat energy on each photovoltaic module.Time has been grown fragile in this case last crested photovoltaic module and also can produce hot spot.If photovoltaic group string loses generating capacity because of shade or leaf or birds droppings cover, receive so photovoltaic module will become the resistance of being made up of RS+RSO.At this moment the systems array electric current will oppositely pass through this resistance, and the local high temperature that produces receives so hot spot will appear in cell panel, generating capacity and decrease in efficiency, and serious meeting was lost efficacy the cell silicon chip explosion.If the shade phenomenon is eliminated, the permanent injured generating efficiency from then on of battery that hot spot occurs descends, and finally the photovoltaic module of this piece inefficacy will be scrapped.
The method that solves at present is that system is divided into some spans is (close more good more; But cost increases); About the about 9-15V of each span voltage; In case there is the shade phenomenon to occur just its whole span battery being discerned the diode short circuit with a negative pressure in certain span, prevent that excessive reverse current from flowing through RS+RSO, ensure in addition that whole system works on not to be affected substantially.
The situation that have more than is needed a few annual energy output still descends still can appear during practical application, because simply adopt inexpensive negative pressure identification diode unsatisfactory as the shade shunting device.Though negative pressure identification diode has the short circuit effect, internal resistance is bigger, still has reverse current shunting passing through RS1+RSO.And negative pressure identification diode exists the voltage drop of 0.7-1V during short circuit, this means the consumption heating that need bear (0.7-1V) * I system power, if the long slightly serious meeting of heating loss's time is crumpled terminal box.The negative pressure identification diode of heating (what especially use is Schottky negative pressure identification diode) can puncture, still can short circuit normal power generation electric current and dead electricity behind shadow recovery.The bigger probability that occurs of energy output is higher.
In a word, shade phenomenon and hot spot appear in local cell, are not local minor issues, but influence the big problem of whole system energy output.Can only be stopgap measure with negative pressure identification diode as the shade bypass.
The utility model content:
The purpose of the utility model is: to the problem of above-mentioned prior art existence; Propose that a kind of internal resistance is low, hear rate is little, the negative pressure energy storage afterflow module of dependable performance; Take place thereby thoroughly stop hot spot, ensure the photovoltaic battery panel long-life, making it all the time can peak power output.
In order to achieve the above object; The negative pressure energy storage afterflow module of the utility model comprises the above negative pressure drive current following control circuit unit of two-stage; Said negative pressure drive current following control circuit unit comprises a pair of metal-oxide-semiconductor; The grid of said a pair of metal-oxide-semiconductor is connected respectively with source electrode relatively; Be connected with storage capacitor through negative pressure identification diode between the drain electrode of said a pair of metal-oxide-semiconductor; The positive pole of said negative pressure identification diode is drawn cold end; The negative pole of said negative pressure identification diode is drawn hot end behind storage capacitor, also going between between said negative pressure identification diode and the storage capacitor connects the grid junction of said a pair of metal-oxide-semiconductor through voltage checking chip, and the above negative pressure drive current following control circuit unit of said two-stage connects the hot end and the cold end of corresponding battery unit in the series connection photovoltaic cell group respectively as the mode of back one-level hot end with the previous stage cold end.
During work; When unusual reverse voltage appears in the corresponding battery unit of a certain negative pressure drive current following control circuit unit; The a pair of metal-oxide-semiconductor of this negative pressure drive current following control circuit unit is conducting, thereby plays negative pressure afterflow effect, avoids influencing the overall optical photovoltaic generating system.
Description of drawings
Below in conjunction with accompanying drawing the utility model is further described.
Fig. 1 is the circuit theory diagrams of an embodiment of the utility model.
Fig. 2 is the circuit module perspective view of Fig. 1 embodiment.
Embodiment
Embodiment one
The circuit structure of the negative pressure energy storage afterflow module of present embodiment is as shown in Figure 1, has three grades of negative pressure drive current following control circuit unit.Each negative pressure drive current following control circuit unit comprises a pair of metal-oxide-semiconductor, and the grid of this a pair of metal-oxide-semiconductor (MOSFET) is connected respectively with source electrode relatively, is connected with storage capacitor through negative pressure identification diode between the drain electrode.Its concrete structure and operation principle can be 201010248997.4 Chinese invention patent application documents referring to application number.
The positive pole of negative pressure identification diode is drawn cold end, and---be the B end for the first order, its negative pole is drawn hot end behind storage capacitor---is the A end for the first order.Also go between between negative pressure identification diode and the storage capacitor and connect the grid junction of a pair of metal-oxide-semiconductor through voltage checking chip, three grades of negative pressure drive current following control circuit unit connect the hot end and the cold end of corresponding battery unit in the series connection photovoltaic cell group respectively as the mode of back one-level hot end with the previous stage cold end.For example the B end promptly is the cold end of the first order (previous stage), is again the hot end of the second level (back one-level) simultaneously.The voltage checking chip of present embodiment adopts the IR2101 chip for driving, includes the output of voltage detecting and high level, also can adopt HT70XX series, or realizes with comparator LM339 logical circuit.
As switching device, reliable conducting realizes bypass functionality to present embodiment when reverse current appears in photovoltaic system with the MOSFET that hangs down internal resistance, takes place thereby thoroughly stop hot spot, and the guarantee photovoltaic battery panel is exported with maximum power all the time.
During actual fabrication, as shown in Figure 2, each circuit unit is packaged in the module bodies plate 1, and each high and low potential end is drawn from the one side of main board 1 with the structure of sheet pin 1-5 respectively, thereby is convenient to wiring.During use, the module of present embodiment is arranged in the photovoltaic junction box chamber, and its pin and groove elastic device plug together, realize with the photovoltaic cell group between reliable the electrical connection.
Conclusion is got up, and present embodiment is compared with conventional diode afterflow device, has following remarkable advantage:
One: circuit design has realized low internal resistance, and power consumption is merely 1/7th of conventional diode afterflow;
Two: can realize 100% bypass reverse current, the generation of stopping photovoltaic module hot spot phenomenon prolongs the photovoltaic module life-span, improves electricity generation efficiency;
Three: modular structure is succinct, is convenient to install.
Except that the foregoing description, the utility model can also have other equivalent transformation modes, like the combination of the integration module of other analogous circuits, except that connected structure, also can adopt be pressed into, electric connection structure such as embedding, these all belong to the protection range of the utility model.

Claims (4)

1. negative pressure energy storage afterflow module; It is characterized in that: comprise the above negative pressure drive current following control circuit unit of two-stage; Said negative pressure drive current following control circuit unit comprises a pair of metal-oxide-semiconductor; The grid of said a pair of metal-oxide-semiconductor is connected respectively with source electrode relatively; Be connected with storage capacitor through negative pressure identification diode between the drain electrode of said a pair of metal-oxide-semiconductor; The positive pole of said negative pressure identification diode is drawn cold end; The negative pole of said negative pressure identification diode is drawn hot end behind storage capacitor, also going between between said negative pressure identification diode and the storage capacitor connects the grid junction of said a pair of metal-oxide-semiconductor through voltage checking chip, and the above negative pressure drive current following control circuit unit of said two-stage connects the hot end and the cold end of corresponding battery unit in the series connection photovoltaic cell group respectively as the mode of back one-level hot end with the previous stage cold end.
2. negative pressure energy storage afterflow module according to claim 1 is characterized in that: said voltage checking chip adopts the IR2101 chip for driving.
3. negative pressure energy storage afterflow module according to claim 1 and 2, it is characterized in that: said each circuit unit is packaged in the module bodies plate.
4. negative pressure energy storage afterflow module according to claim 3 is characterized in that: said each high and low potential end is drawn from the one side of main board with the structure of sheet pin respectively.
CN 201220282502 2012-06-15 2012-06-15 Negative pressure energy storage follow current module Expired - Fee Related CN202633322U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220282502 CN202633322U (en) 2012-06-15 2012-06-15 Negative pressure energy storage follow current module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220282502 CN202633322U (en) 2012-06-15 2012-06-15 Negative pressure energy storage follow current module

Publications (1)

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CN202633322U true CN202633322U (en) 2012-12-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314518A (en) * 2020-02-26 2021-08-27 圣邦微电子(北京)股份有限公司 Layout of motor H-bridge drive circuit chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314518A (en) * 2020-02-26 2021-08-27 圣邦微电子(北京)股份有限公司 Layout of motor H-bridge drive circuit chip
CN113314518B (en) * 2020-02-26 2023-10-13 圣邦微电子(北京)股份有限公司 Motor H bridge driving circuit chip layout

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121226

Termination date: 20160615

CF01 Termination of patent right due to non-payment of annual fee