CN203086380U - Structure for avoiding or reducing PID of crystalline silicon photovoltaic assembly - Google Patents
Structure for avoiding or reducing PID of crystalline silicon photovoltaic assembly Download PDFInfo
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- CN203086380U CN203086380U CN2013200577077U CN201320057707U CN203086380U CN 203086380 U CN203086380 U CN 203086380U CN 2013200577077 U CN2013200577077 U CN 2013200577077U CN 201320057707 U CN201320057707 U CN 201320057707U CN 203086380 U CN203086380 U CN 203086380U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to a structure for avoiding or reducing PID (Potential Induced Degradation) of a crystalline silicon photovoltaic assembly. The structure for avoiding or reducing PID of a crystalline silicon photovoltaic assembly is used for a photovoltaic system. The photovoltaic system includes photovoltaic assembly arrays composed of crystalline silicon photovoltaic modules, combiner boxes and an inverter. The crystalline silicon photovoltaic modules are connected with the combiner boxes respectively. Positive electrode output terminals of the combiner boxes are connected with each other in parallel and then connected with a positive input terminal of the inverter. Negative electrode output terminals of the combiner boxes are connected with each other in parallel and then connected with a negative electrode input terminal of the inverter. A switch controller is arranged between the positive electrode input terminal and the negative electrode input terminal of the inverter or between the positive input terminal of the inverter and the negative input terminal of the inverter of at least one combiner box. The structure for avoiding or reducing PID of the crystalline silicon photovoltaic assembly provided by the utility model is simple and easy to realize and low in cost. By using the structure for avoiding or reducing PID of the crystalline silicon photovoltaic assembly, PID phenomenon can be avoided or eliminated effectively and the utilization rate of the photovoltaic system and the safety of a photovoltaic power station can be improved.
Description
Technical field
The utility model relates to the manufacturing field of Crystalline Silicon PV Module, particularly a kind ofly avoids or reduces the structure that the Crystalline Silicon PV Module current potential brings out decay.
Background technology
The PID phenomenon be finger assembly in use, especially under the many wet environments of high temperature, high voltage between circuit in the Crystalline Silicon PV Module and its grounded metal frame solar battery cell of flowing through, the phenomenon of the assembly photovoltaic performance continuous decrement that occurs, this is the distinctive phenomenon of solar module.The mechanism that causes this type of decay is many-sided, for example under high-tension effect, the ion transport phenomena occurs in the material of the encapsulating material of assembly battery, assembly upper surface layer and undersurface layer; The hot carrier phenomenon that occurs in the battery; The performance of separating the active layer of having subdued battery again of electric charge; Relevant circuit is corroded etc.
According to laboratory and power station on-the-spot investigation, the main affecting factors that the PID effect takes place has: 1. component environment humidity, and humidity is big more, and the PID effect is obvious more; 2. system voltage, system voltage is big more, and PID is obvious more; 3. ambient temperature, temperature is high more, and the PID effect is obvious more; 4. encapsulating material; 5. assembly service time; 6. the situation of assembly surface, for example conductivity.
The PID effect can cause the component power decay, and performance reduces, and then influences the generating capacity and the gross output of whole system.Find that in the actual motion of power station the system voltage of photovoltaic generating system has lasting PID effect to assembly, can cause power attenuation more than 50% when serious, directly influence the actual power amount and the investor's yield in power station.Photovoltaic plant is when installation component at present, and generally the assembly series connection with some is one group.Because assembly is subjected to the influence of PID effect, for P type silion cell assembly, the negative side of serial connection assembly is than the PID intensity height of side of the positive electrode, and it is the most severe promptly to be subjected to PID to influence power attenuation at the assembly of negative pole end.For N type battery, also do not find the PID effect at present.
At this phenomenon, each producer has proposed various schemes for slowing down and eliminating the PID effect, and main method has following several:
1. minus earth: the negative pole end ground connection of header box or inverter.Since the particularity of photovoltaic generating system, at present, general floating ground (earth-free) system that adopts of photovoltaic combining inverter direct current system section in the photovoltaic generation, promptly the positive pole of DC power-supply system section, negative pole are all earth-free.In case minus earth except because cause refluxing by cabinet, can also return from ground, and stray electrical current is increased; If plus earth takes place, will cause serious threat to personal safety, the earth fault on the unearthed direct current system can cause that also power supply damages and on-the-spot the damage, can influence the normal operation of grid-connected system when serious.And because solar module is put in roof or spacious wild environment, very easily be struck by lightning and make system produce extreme surge voltage, though design device such as lightning protection device but can not avoid high-tension generation fully, the high voltage of moment will cause huge potential hazard to the insulation of the direct current system of long-time running, thereby can cause the system earth of negative or positive electrode side, in case system earth will cause the hidden danger that has an accident to the whole generating system.
2. both positive and negative polarity exchange: in the middle of the assembly of serial connection, with side of the positive electrode and the exchange of negative side assembly, can effectively reduce the PID effect, as Chinese patent 201110460800.8 " solar components power attenuation restoration methods ", 201120573837.7 " manually the solar components power attenuation prevents and treats module " and 201120573995.2 " decay of automatic sun energy component power prevents and treats module ".Defective: take time and effort too many.For a big system, the installation cost height, and because this work has the content of certain technology, the engineer that need possess certain photovoltaic knowledge finishes, this more increases installation cost.
3. encapsulating material: improve the volume resistance of encapsulating material (being generally EVA or glass), reduce leakage current, reduce PID intensity.Defective: the volume resistance that improves encapsulating material needs apply certain additive toward encapsulating material in, and the durability of these additives and inefficacy are difficult to determine, prolongation that might be in time, and volume resistance lowers, and reduces the inefficacy of PID intensity and make.
4. adjust the battery blade technolgy: improve the refractive index of battery sheet front surface antireflective film (being generally silicon nitride), can effectively reduce the PID effect.Defective: the refractive index of antireflective film can influence the reflectivity on battery sheet surface, thereby influences the efficient of battery sheet.The silicon nitride ranges of indices of refraction that present each battery sheet manufacturer plates on silicon chip is 2.05～2.12, if increase the efficient that the refractive index of silicon nitride can reduce the battery sheet on this basis, battery sheet production firm is unacceptable to this scheme.
The utility model content
The technical problems to be solved in the utility model is: in order to overcome in the prior art, slow down and eliminate the unfavorable deficiency of method of PID effect, the utility model provides a kind of and avoids or reduce the structure that the Crystalline Silicon PV Module current potential brings out decay, avoid or reduce the PID phenomenon, improve the conversion efficiency of photovoltaic system and the fail safe of photovoltaic plant.
The technical scheme that its technical problem that solves the utility model adopts is: a kind ofly avoid or reduce the structure that the Crystalline Silicon PV Module current potential brings out decay, be used for photovoltaic system, described photovoltaic system comprises the photovoltaic module array of being made up of described Crystalline Silicon PV Module, header box and inverter, each photovoltaic module array all is connected with a header box, the cathode output end of described each header box and connect the back be connected with the electrode input end of inverter, the cathode output end of each header box and connect the back be connected with the negative input of inverter, between the both positive and negative polarity input of inverter or between the both positive and negative polarity output of at least one header box on-off controller is being set.When photovoltaic system had electricity output, described on-off controller disconnected; In the time of need carrying out the power attenuation recovery to photovoltaic module, described on-off controller closure.
Described on-off controller is light-operated switch or timing switch.Can control the break-make of photovoltaic system positive and negative electrode by illuminance or time.
Those skilled in the art generally are by the method for hot and humid high pressure in the laboratory, earlier the PID effect is obviously showed, and then try every possible means to recover power attenuation, and wish to recover comparatively fast, in the prior art, the apparatus and method of this test PID effect are a lot.Because the utility model must be slower with the structure recovery of the positive and negative electrode short circuit of photovoltaic system, based on this inertial thinking, structure of the present utility model is not adopted by those skilled in the art.And the inventor finds, in actual use, the PID effect is a process slowly, the utility model is the positive and negative electrode short circuit that just began before the PID effect shows photovoltaic system, though recover slowlyer, but can recover every day, can effectively avoid or reduce the decay that the Crystalline Silicon PV Module current potential brings out.
The beneficial effects of the utility model are, of the present utility modelly avoid or reduce the structure that the Crystalline Silicon PV Module current potential brings out decay, be simple and easy to realize, and cost is low, the PID phenomenon be can effectively avoid and eliminate, the utilance of photovoltaic system and the safety of photovoltaic plant improved.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 of the present utility modelly avoids or reduces the structural representation that the Crystalline Silicon PV Module current potential brings out the optimum embodiment of structure of decay.
Embodiment
In conjunction with the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
As shown in Figure 1, of the present utility modelly avoid or reduce the structural representation that the Crystalline Silicon PV Module current potential brings out the optimum embodiment of structure of decay.Be used for photovoltaic system, described photovoltaic system comprises photovoltaic module array, header box and the inverter of being made up of described Crystalline Silicon PV Module, each photovoltaic module array all is connected with a header box, the cathode output end of described each header box also connects the back and is connected with the electrode input end of inverter, and the cathode output end of each header box and connecing afterwards is connected with the negative input of inverter.Owing to the on-off controller most convenient is installed in header box, therefore, between the both positive and negative polarity output of a header box on-off controller is set therein.When photovoltaic system had electricity output, described on-off controller disconnected; When photovoltaic system does not have electricity output, described on-off controller closure.
Described on-off controller is a light-operated switch.
Effective really through this scheme of experiment confirm.The concrete grammar of experiment: after an assembly that PID effect defective arranged taked both positive and negative polarity short circuit a period of time, component power had tangible lifting.
Optimum embodiment of the present utility model only connects an on-off controller, can also between the both positive and negative polarity output of other header boxs on-off controller be set, the on-off controller with the dotted line connection as shown in Figure 1.Fig. 1 is a schematic diagram, the photovoltaic module array that the header box in the middle of only drawing connects, and the photovoltaic module array that all the other two header boxs connect does not draw.
With above-mentioned foundation desirable embodiment of the present utility model is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this utility model technological thought.The technical scope of this utility model is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (2)
1. avoid or reduce the structure that the Crystalline Silicon PV Module current potential brings out decay for one kind, be used for photovoltaic system, described photovoltaic system comprises the photovoltaic module array of being made up of described Crystalline Silicon PV Module, header box and inverter, each photovoltaic module array all is connected with a header box, the cathode output end of described each header box and connect the back be connected with the electrode input end of inverter, the cathode output end of each header box and connect the back be connected with the negative input of inverter, it is characterized in that: between the both positive and negative polarity input of inverter or between the both positive and negative polarity output of at least one header box on-off controller is being set.
2. as claimed in claim 1ly avoid or reduce the structure that the Crystalline Silicon PV Module current potential brings out decay, it is characterized in that: described on-off controller is light-operated switch or timing switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200577077U CN203086380U (en) | 2013-02-01 | 2013-02-01 | Structure for avoiding or reducing PID of crystalline silicon photovoltaic assembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200577077U CN203086380U (en) | 2013-02-01 | 2013-02-01 | Structure for avoiding or reducing PID of crystalline silicon photovoltaic assembly |
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| CN203086380U true CN203086380U (en) | 2013-07-24 |
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| CN2013200577077U Withdrawn - After Issue CN203086380U (en) | 2013-02-01 | 2013-02-01 | Structure for avoiding or reducing PID of crystalline silicon photovoltaic assembly |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137730A (en) * | 2013-02-01 | 2013-06-05 | 常州亿晶光电科技有限公司 | Method and structure for avoiding or reducing crystalline silicon photovoltaic assembly potential induction damping |
| CN103607172A (en) * | 2013-12-05 | 2014-02-26 | 无锡上能新能源有限公司 | Device for simultaneously realizing negative grounding and ground insulation resistance detection in photovoltaic power station |
| CN106656021A (en) * | 2016-11-28 | 2017-05-10 | 广东兆能新能源有限公司 | Anti-PID (Potential Induced Degradation) combiner box system and realization method thereof |
-
2013
- 2013-02-01 CN CN2013200577077U patent/CN203086380U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137730A (en) * | 2013-02-01 | 2013-06-05 | 常州亿晶光电科技有限公司 | Method and structure for avoiding or reducing crystalline silicon photovoltaic assembly potential induction damping |
| CN103137730B (en) * | 2013-02-01 | 2015-05-20 | 常州亿晶光电科技有限公司 | Method and structure for avoiding or reducing crystalline silicon photovoltaic assembly potential induction damping |
| CN103607172A (en) * | 2013-12-05 | 2014-02-26 | 无锡上能新能源有限公司 | Device for simultaneously realizing negative grounding and ground insulation resistance detection in photovoltaic power station |
| CN103607172B (en) * | 2013-12-05 | 2017-01-04 | 上能电气股份有限公司 | Realize photovoltaic plant minus earth and the device of ground insulation resistance detection simultaneously |
| CN106656021A (en) * | 2016-11-28 | 2017-05-10 | 广东兆能新能源有限公司 | Anti-PID (Potential Induced Degradation) combiner box system and realization method thereof |
| CN106656021B (en) * | 2016-11-28 | 2018-10-12 | 广东兆能新能源有限公司 | A kind of anti-PID header boxs system and its implementation |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130724 Effective date of abandoning: 20150520 |
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| RGAV | Abandon patent right to avoid regrant |