CN117691887A - Super-capacitor energy-storage type high-overload single-phase inverter circuit and control method thereof - Google Patents
Super-capacitor energy-storage type high-overload single-phase inverter circuit and control method thereof Download PDFInfo
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Abstract
The invention discloses a super capacitor energy storage type high overload single-phase inverter circuit and a control method thereof, wherein the super capacitor energy storage type high overload single-phase inverter circuit comprises a power supply, the power supply is electrically connected with a first-stage DC/DC converter, the first-stage DC/DC converter is electrically connected with a super capacitor, and the super capacitor is electrically connected with a direct-current side of a second-stage isolation type single-phase inverter with a lifting voltage; the second-stage isolation type single-stage single-phase inverter capable of increasing and decreasing the voltage comprises a direct-current side six-switch branch circuit, wherein the direct-current side six-switch branch circuit is electrically connected with an isolation transformer, the isolation transformer is electrically connected with an alternating-current side two-switch branch circuit, and the alternating-current side two-switch branch circuit is electrically connected with an alternating-current side filter circuit. The invention can restrain the power fluctuation of the input power supply, the single-phase inverter has the capability of voltage regulation and can realize stable alternating-current voltage output when the voltage of the super capacitor fluctuates in a large range.
Description
Technical Field
The invention relates to the field of electricity, in particular to a super-capacitor energy-storage type high-overload single-phase inverter circuit and a control method thereof.
Background
A single-phase inverter, also referred to as a switching power amplifier, for driving communication detection equipment may amplify the power of an input signal to a desired level, driving a load device into operation. The communication detection equipment applied to the fields of low-frequency detection, communication and the like belongs to a short-time pulse load, namely, higher pulse power is required when the load equipment works, and power consumption is not required when the load does not work. The single-phase inverter is used for driving communication detection equipment, and has the characteristics of high required pulse power, small average power and high peak-to-average power ratio. The high peak power can generate larger impact on the power supply, and the stability of the power supply system is affected.
In order to solve the problems, an energy storage device is generally added in engineering for buffering pulse load power fluctuation, so that the safety, stability and reliability of a power supply are improved. A conventional single-phase inverter structure and energy transfer process for an integrated supercapacitor energy storage device is shown in fig. 1. Including isolated DC/DC converters, DC/AC single phase inverters, bi-directional DC/DC converters. The back-stage DC/AC single-phase inverter only has the voltage reduction capability, in order to ensure the regulation range of the output voltage of the single-phase inverter, the voltage of a direct current bus must be stabilized to a proper range, the energy stored by a super capacitor is changed along with the voltage, the energy cannot be directly connected on the direct current bus in parallel, and a DC/DC converter with the bidirectional power transmission capability must be connected between the direct current bus and the super capacitor. The traditional isolated single-phase inverter of the integrated super capacitor energy storage device has two working modes of charging and discharging. In the super capacitor charging mode, the rear stage DC/AC single-phase inverter does not work, and the power supply charges the super capacitor to a set voltage through the isolated DC/DC converter and the bidirectional DC/DC converter with smaller power. In the discharge mode of the super capacitor, the power supply does not transmit energy, the isolation DC/DC converter does not work, and at the moment, the super capacitor is used for stabilizing the voltage of the direct current bus capacitor through the bidirectional DC/DC converter and providing required pulse power for the subsequent stage DC/AC single-phase inverter. The energy transmitted from the power supply to the rear-stage DC/AC single-phase inverter passes through the multi-stage switching converter, so that larger energy loss is caused, and the system efficiency is low. The system has complex structure, large number of converters and large volume.
Disclosure of Invention
The invention aims to provide a super capacitor energy storage type high overload single-phase inverter circuit and a control method thereof, so as to solve the problems in the background art.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the super capacitor energy storage type high-overload single-phase inverter circuit comprises a power supply, wherein the power supply is electrically connected with a first-stage DC/DC converter, the first-stage DC/DC converter is electrically connected with a super capacitor, and the super capacitor is electrically connected with a direct-current side of a second-stage isolated type single-phase inverter capable of boosting and reducing voltage; the second-stage isolation type single-stage single-phase inverter capable of increasing and decreasing the voltage comprises a direct-current side six-switch branch circuit, wherein the direct-current side six-switch branch circuit is electrically connected with an isolation transformer, the isolation transformer is electrically connected with an alternating-current side two-switch branch circuit, and the alternating-current side two-switch branch circuit is electrically connected with an alternating-current side filter circuit;
the direct-current side six-switch branch comprises a third semiconductor switching device S 3 Fourth semiconductor switching device S 4 Fifth semiconductor switching device S 5 Sixth semiconductor switching device S 6 Seventh semiconductor switching device S 7 And an eighth semiconductor switching device S 8 The method comprises the steps of carrying out a first treatment on the surface of the Wherein one end of the super capacitor is electrically connected with the third semiconductor switching device S 3 And a seventh semiconductor switching device S 7 The other end is electrically connected with the fourth semiconductor switching device S 4 Source of (c) and eighth semiconductor switching device S 8 A drain electrode of (2); fourth semiconductor switching device S 4 Is electrically connected to the third semiconductor switching device S 3 Energy storage inductor of source electrode and isolation transformer DC sideL m Is a member of the group; seventh semiconductor switching device S 7 Is electrically connected to the fifth semiconductor switching device S 5 A fifth semiconductor switching device S 5 Is electrically connected to the sixth semiconductor switching device S 6 Energy storage inductor of drain electrode and isolation transformer DC sideL m Is arranged at the other end of the tube; sixth semiconductor switching device S 6 Is electrically connected to the eighth semiconductor switching device S 8 A drain electrode of (2);
the two switching branches on the alternating current side comprise a ninth semiconductor switching device S 9 Ninth semiconductor switching device S 9 One end of the DC side coil of the isolation transformer is electrically connected with one end of the AC side coil of the isolation transformer, and the other end of the AC side coil of the isolation transformer is electrically connected with the tenth semiconductor switchDevice S 10 A drain electrode of (2); tenth semiconductor switching device S 10 The source electrode of the filter circuit is electrically connected with one end of the filter circuit, and the other end of the filter circuit is electrically connected with the ninth semiconductor switching device S 9 Is a source of (c).
Further improvement, the filter circuit comprises a first filter capacitorC f A first filter capacitorC f One end is electrically connected with the ninth semiconductor switching device S 9 Source electrode of (c) and first filter inductorL o A first filter capacitorC f Is electrically connected to the tenth semiconductor switching device S 10 Source electrode of (C) and second filter capacitorC o Is connected with one end of (1) and loadR o One end of the second filter capacitorC o Is electrically connected with the first filter inductanceL o And the other end and load of (2)R o And the other end of (2).
A further improvement is that,
the capacity value of the super capacitor
Is the capacity value of the super capacitor->For super capacitor discharge time, < >>Discharge power for super capacitor, < >>Maximum charging voltage for super capacitor, +.>The minimum discharge voltage of the super capacitor;
inductance value of energy storage inductance LmAnd a first filter capacitor C f Capacity of +.>The method meets the following conditions:
(11)
(12)
for the first filter capacitance->Maximum value of output voltage>Is used as loadR o ) Is set at the current maximum of (2); />For storing energyL m Is a ripple of the inductor current of (a); />For the first filter capacitance->Is connected with the voltage ripple at two ends of the voltage transformer; />Is a fifth semiconductor switching device S 5 Is used for the switching frequency of the (c),Nthe turn ratio of the isolation transformer;
first filter inductorL o And a second filter capacitorC o The parameter ranges are as follows:
（18）
（19）
wherein, the first filter inductorL o And a second filter capacitorC o The cut-off frequency of the composed low-pass filter isf o The fundamental wave frequency isf 1 The method comprises the steps of carrying out a first treatment on the surface of the Q is the quality factor of the low-pass filter, load R o Has a resistance ofAccording to->The range of operation and the selected Q value, i.e. determining the low-pass filterL o Is +.>Parameter rangesC o Capacity of +.>Parameter ranges.
Further improved, the first stage DC/DC converter is a BUCK circuit.
Further improvements are provided, the BUCK circuit comprising a first semiconductor switching device S 1 Second semiconductor switching device S 2 And a second filter inductance Ls; first semiconductor switching device S 1 Is electrically connected with one end of a power supply source, a first semiconductor switching device S 1 Is electrically connected to the second semiconductor switching device S 2 Drain electrode of (d) and second filter inductance L s One end of the second filter inductance L s Is electrically connected to one end of the super capacitor, a second semiconductor switching device S 2 The source electrode of the super capacitor is electrically connected with the other end of the power supply.
Further improvement, the third semiconductor switching device S 3 Fourth semiconductor switching device S 4 Fifth semiconductor switching device S 5 Sixth semiconductor switchDevice S 6 Seventh semiconductor switching device S 7 And an eighth semiconductor switching device S 8 Is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor.
The structure of the super capacitor energy storage type high overload single-phase inverter circuit is as shown above, and the control method comprises the following steps:
in a single-phase alternating current output period, the working modes are divided into four types, wherein the working modes are a mode 1 and a mode 2 when the output voltage is in a positive half-wave state, and the working modes are a mode 3 and a mode 4 when the output voltage is in a negative half-wave state; the positive half-wave and the negative half-wave of the output voltage symmetrically run, and a fifth semiconductor switching device is arrangedS 5 Sixth semiconductor switching deviceS 6 Seventh semiconductor switching deviceS 7 Eighth semiconductor switching deviceS 8 Ninth semiconductor switching deviceS 9 Tenth semiconductor switching deviceS 10 Is of the switching frequency off s The switching period isT s Fifth semiconductor switching deviceS 5 And a seventh semiconductor switching deviceS 7 The switching signal is the same as the tenth semiconductor switching deviceS 10 Complementary, sixth semiconductor switching deviceS 6 And an eighth semiconductor switching deviceS 8 The switching signal is the same as the ninth semiconductor switching deviceS 9 Complementation; the mode 1 and mode 3 operating intervals are defined as DT s Then the working intervals of the mode 2 and the mode 4 are 1-DT s Wherein D is the duty cycle of the semiconductor switching device, D being greater than 0 and less than 1;
the output voltage is positive half wave and the working interval is DT s The operating mode is mode 1: third semiconductor switching deviceS 3 Fourth semiconductor switching deviceS 4 Fifth semiconductor switching deviceS 5 Sixth semiconductor switching deviceS 6 Seventh semiconductor switching deviceS 7 Eighth semiconductor switching deviceS 8 Ninth semiconductor switching deviceS 9 Conduction and tenth semiconductor switching deviceS 10 Closing the super capacitor through a seventh semiconductor switching deviceS 7 Fifth semiconductor switching deviceS 5 Fourth semiconductor switching deviceS 4 To energy storage inductanceL m Charging, at this time, energy storage inductanceL m Energy storage, first filter capacitorC f Through the first filter inductorL o And a second filter capacitorC o The combined filter is directed to the loadR o Supplying power;
the output voltage is positive half wave and the working interval is 1-DT s The operating mode is mode 2: fourth semiconductor switching deviceS 4 Ninth semiconductor switching deviceS 9 Tenth semiconductor switching deviceS 10 Conduction, third semiconductor switching deviceS 3 Fifth semiconductor switching deviceS 5 Sixth semiconductor switching deviceS 6 Seventh semiconductor switching deviceS 7 Eighth semiconductor switching deviceS 8 Closing, energy storage inductanceL m The stored energy passes through an isolation transformerT 1 Ninth semiconductor switching deviceS 9 Tenth semiconductor switching deviceS 10 First filter capacitorC f First filter inductorL o And a second filter capacitorC o The combined filter is directed to the loadR o If power is supplied, if the energy storage inductanceL m The stored energy is completely released before the end of the mode 2 switching time, and is then passed through the first filter capacitorC f To energy storage inductanceL m Energy storage and loadR o Supplying power;
the output voltage is a negative half wave and the working interval is DT s The operating mode is mode 3: third semiconductor switching deviceS 3 Sixth semiconductor switching deviceS 6 First, theEight semiconductor switching deviceS 8 Tenth semiconductor switching deviceS 10 Conduction fourth semiconductor switching deviceS 4 Fifth semiconductor switching deviceS 5 Seventh semiconductor switching deviceS 7 Ninth semiconductor switching deviceS 9 The super capacitor is turned off through the third semiconductor switching deviceS 3 Sixth semiconductor switching deviceS 6 Eighth semiconductor switching deviceS 8 To energy storage inductanceL m Charging, at this time, energy storage inductanceL m Energy storage, first filter capacitorC f Through the first filter inductorL o And a second filter capacitorC o The combined filter is directed to the loadR o Supplying power;
the output voltage is a negative half wave and the working interval is 1-DT s The operation mode is mode 4, third semiconductor switching deviceS 3 Ninth semiconductor switching deviceS 9 Tenth semiconductor switching deviceS 10 Fourth semiconductor switching device of on and offS 4 Fifth semiconductor switching deviceS 5 Sixth semiconductor switching deviceS 6 Seventh semiconductor switching deviceS 7 Eighth semiconductor switching deviceS 8 Closing, energy storage inductanceL m The stored energy passes through an isolation transformerT 1 Ninth semiconductor switching deviceS 9 Tenth semiconductor switching deviceS 10 A first filter capacitorC f First filter inductorL o And a second filter capacitorC o The combined filter is directed to the loadR o If the energy storage inductor supplies powerL m The stored energy is completely released before the end of the mode 4 switching time, which is then passed by the first filter capacitorC f To energy storage inductanceL m Energy storage and loadR o And (5) supplying power.
Compared with the prior art, the invention has the beneficial effects that:
1. the single-phase inverter has the functions of isolation and voltage rising and falling, can directly connect the super capacitor to the DC bus side to replace the original DC bus capacitor, and does not need to add an additional bidirectional DC/DC converter for charging and discharging the super capacitor.
2. The energy from the input power supply to the single-phase inverter passes through the two-stage converter, and the system has the advantages of simple structure, high overall efficiency and small volume.
3. The invention can restrain the power fluctuation of the input power supply, the single-phase inverter has the capability of voltage regulation and can realize stable alternating-current voltage output when the voltage of the super capacitor fluctuates in a large range.
Drawings
Fig. 1 is a schematic diagram of a single-phase inverter structure and energy transfer process of a conventional integrated supercapacitor energy storage device;
fig. 2 is a block diagram of a single-phase inverter based on supercapacitor energy storage according to the present invention;
fig. 3 is a circuit topology diagram of a single-phase inverter based on supercapacitor energy storage in an embodiment of the present invention;
fig. 4a is an energy flow schematic diagram of a super capacitor charge-discharge control strategy according to the present invention;
fig. 4b is a schematic diagram of a voltage power curve of a charging and discharging control strategy of the super capacitor according to the present invention;
fig. 5 shows the output voltage of the isolated step-up/step-down single-stage single-phase inverter according to the present inventionU o A sine wave modulation strategy schematic of (a);
fig. 6a is a schematic diagram of an isolated buck-boost single-stage single-phase inverter in mode 1 operation;
fig. 6b is a schematic diagram of an isolated buck-boost single-stage single-phase inverter in mode 2 operation;
fig. 6c is a schematic diagram of an isolated buck-boost single-stage single-phase inverter in mode 3;
fig. 6d is a schematic diagram of an isolated buck-boost single-stage single-phase inverter in mode 4;
fig. 7 is a graph showing the variation of input/output gain with duty ratio for an isolated buck-boost single-stage single-phase inverter with a transformer turn ratio N of 1;
fig. 8 is a simulation waveform diagram of a super capacitor charge-discharge control strategy according to the present invention;
fig. 9 is a waveform diagram of output voltage and current of the isolated buck-boost single-stage single-phase inverter according to the present invention when the voltage of the super capacitor is changed.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 2, the super capacitor energy-storage type high-overload single-phase inverter provided by the invention comprises a first-stage DC/DC converter, a super capacitor and a second-stage isolation type single-phase inverter with a step-up and step-down voltage; the first stage DC/DC converter is used for butting input power supplies, including but not limited to non-isolated BUCK, BOOST, BUCK-BOOST and isolated DC/DC converters; the super capacitor is connected in parallel with the two output ends of the first-stage DC/DC converter, and the two ends of the super capacitor are in butt joint with the direct current side of the second-stage isolated type single-stage single-phase inverter capable of increasing and decreasing voltage; the second-stage isolated type single-stage single-phase inverter capable of increasing and decreasing the voltage comprises a direct-current side six-switch branch, an isolation transformer, an alternating-current side two-switch branch and an alternating-current side filter circuit; the first-stage DC/DC converter is used for realizing low-power charging of the super capacitor, and the second-stage isolation type single-stage single-phase inverter capable of elevating voltage is used for high-power discharging of the super capacitor and outputting required high-power alternating current signals.
In the embodiment of the invention, as shown in FIG. 3, the input power supply voltage is greater than the charging voltage of the super capacitor, the first stage DC/DC converter is selected as a BUCK circuit, and a switching device is usedS 1 、S 2 Filtering inductorL s The input end of the first stage DC/DC converter (i.e. BUCK circuit) is connected with a power supply, the output end is connected with a super capacitor, and the switching deviceS 1 、S 2 Forms a half-bridge circuit, the midpoint of the half-bridge circuit and the filter inductanceL s One end of the connecting rod is connected,S 1 the drain electrode is connected with the positive electrode of the power supply, and the filter inductorL o Is connected with the positive electrode of the super capacitor, the negative electrode of the power supply and the positive electrode of the super capacitorS 2 Is connected with the negative electrode of the super capacitor.
The second-stage isolated type single-stage single-phase inverter capable of increasing and decreasing voltage is formed by a switching deviceS 3 、S 4 、S 5 、S 6 、S 7 、S 8 、S 9 、S 10 TransformerT 1 (Primary side excitation inductance of transformer isL m Primary-secondary side turn ratio is 1:n), filter capacitorC f 、C o Filtering inductorL o The input end of the second-stage isolated type single-stage single-phase inverter capable of increasing and decreasing voltage is connected with the super capacitor, the output end is connected with the load, and the switching device is arranged in the second-stage isolated type single-stage single-phase inverterS 3 、S 4 AndS 5 、S 6 two half-bridge circuits and transformerT 1 The two ends of the primary side are respectively connected with the midpoints of the two half-bridge circuits, and the switching deviceS 7 Source and switching device of (a)S 3 Is connected with the positive electrode of the super capacitor, and is a switching deviceS 7 Drain and switching device of (c)S 5 Drain connection of (d) switching deviceS 8 Drain and switching device of (c)S 4 Is connected with the cathode of the super capacitor, and is a switching deviceS 8 Source and switching device of (a)S 6 Source connection, switching deviceS 9 、S 10 Drain electrode of (a) is respectively connected with the transformerT 1 Two ends of secondary side are connected, and switching deviceS 9 、S 10 The source electrode of (a) is respectively connected with the filter capacitorC f Two ends are connected, filtering inductanceL o And a filter capacitorC o Forming a low-pass filter with an input terminal and a filter capacitorC f Connected, the output end is connected with a loadR o 。The switching devices S1 to S10 in this embodiment are semiconductor switching devices having on and off functions, and any semiconductor switching device having the same function can implement the circuit function, including but not limited to semiconductor switching devices having on and off functions such as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), insulated Gate Bipolar Transistors (IGBTs), and the like.
The super capacitor charge and discharge control strategy provided in the embodiment includes:
according to the provided control strategy, the energy flow schematic diagram of the system is shown in fig. 4a, the voltage power schematic diagram is shown in fig. 4b, the system works in two modes of charging and discharging of the super capacitor, in the super capacitor charging mode, the load does not work, the input power supply charges the super capacitor to a set voltage with smaller constant power through the first stage DC/DC converter, and the voltage of the super capacitor is kept stable; in the discharge mode of the super capacitor, the load works, the input power supply does not provide energy, namely the first-stage DC/DC converter does not work, and the super capacitor provides required pulse power for the load through the second-stage isolation type single-stage single-phase inverter with the step-up and step-down voltage.
In the super capacitor discharging mode, the embodiment also provides an isolated type single-stage single-phase inverter topology control method capable of increasing and decreasing voltage, which is applied to the isolated type single-stage single-phase inverter topology, and comprises the following steps:
isolated type single-phase inverter output voltage capable of increasing and decreasing voltageU o As shown in FIG. 5, in a single-phase AC output period, the working modes are divided into four types, wherein the working modes are mode 1 and mode 2 when the output voltage is in a positive half-wave state, and the working modes are mode 3 and mode 4 when the output voltage is in a negative half-wave state. Output voltage positive and negative half-wave symmetrical operation, defining high-frequency switch deviceS 5 、S 6 、S 7 、S 8 、S 9 、S 10 Is of the switching frequency off s The switching period isT s ，S 5 AndS 7 the switch signals are the same as and identical toS 10 The complementary sequence of the two elements is that,S 6 andS 8 the switch signals are the same as and identical toS 9 Complementary. The mode 1 and mode 3 operating intervals are defined as DT s Then the working intervals of the mode 2 and the mode 4 are (1-D)T s Where D is the switching device duty cycle, D is greater than 0 and less than 1.
Mode 1 As shown in FIG. 6a, switching deviceS 4 、S 5 、S 7 、S 9 Conduction, switching deviceS 3 、S 6 、S 8 、S 10 Closed super capacitor through switch deviceS 7 、S 5 、S 4 Directional inductanceL m Charging, at this time inductanceL m Energy storage and filter capacitorC f Through the following steps ofL o AndC o the combined filter is directed to the loadR o And (5) supplying power.
Mode 2 switching device as shown in FIG. 6bS 4 、S 9 、S 10 Conduction, switching deviceS 3 、S 5 、S 6 、S 7 、S 8 Closing, inductanceL m The stored energy passes through a transformerT 1 Switching deviceS 9 、S 10 Filter capacitorC f ，L o AndC o the combined filter is directed to the loadR o And (5) supplying power. If the inductance isL m The stored energy is completely released before the end of the mode 2 switching time, which is then passed by the filter capacitorC f Directional inductanceL m Energy storage and loadR o And (5) supplying power.
Mode 3 As shown in FIG. 6cSwitching deviceS 3 、S 6 、S 8 、S 10 Conduction, switching deviceS 4 、S 5 、S 7 、S 9 Closed super capacitor through switch deviceS 3 、S 6 、S 8 Directional inductanceL m Charging, at this time inductanceL m Energy storage and filter capacitorC f Through the following steps ofL o AndC o the combined filter is directed to the loadR o And (5) supplying power.
Mode 4 As shown in FIG. 6d, switching deviceS 3 、S 9 、S 10 Conduction, switching deviceS 4 、S 5 、S 6 、S 7 、S 8 Closing, inductanceL m The stored energy passes through a transformerT 1 Switching deviceS 9 、S 10 Filter capacitorC f ，L o AndC o the combined filter is directed to the loadR o And (5) supplying power. If the inductance isL m The stored energy is completely released before the end of the mode 4 switching time, this time by the filter capacitorC f Directional inductanceL m Energy storage and loadR o And (5) supplying power.
According to the output voltage of the isolated type single-stage single-phase inverter capable of increasing and decreasing voltageU o Sine wave modulation strategy of (D)T s Interval, inductanceL m The voltage at two ends is equal to the voltage of the super capacitorV supercap Inductance (inductance)L m The sensing amount of (2) isThe method comprises the following steps:
(1)
at (1-D)T s Interval, inductanceL m The voltage at both ends is equal toU f N, there are:
(2)
inductance during steady state operationL m And inductanceL o Voltage at both ends is balanced in volt-seconds, i.e ，The method comprises the following steps:
(3)
the gain G of the output and input voltages is:
(4)
irrespective of the influence of the turn ratio N of the transformer, the gain versus duty ratio D is shown in fig. 7, where D is greater than 0 and less than 0.5, the isolated buck-boost single-stage single-phase inverter has a buck capability, and where D is greater than 0.5 and less than 1.
The invention provides parameter calculation of a super capacitor energy storage type high overload single-phase inverter, which comprises the following steps: capacitance value of super capacitorC surpercap Isolation type single-phase inverter energy storage inductor capable of increasing and decreasing voltageL m Is a sensing value of (a)Filter capacitorC f Capacity of +.>Filter inductorL o Is +.>Filter capacitorC o Capacity of +.>A calculation method.
The super capacitor discharge time is tdicharge, the discharge power is pdicharge, the super capacitor charge voltage is Vsupply capmax, the super capacitor discharge voltage is Vsupply capmin, the super capacitor needs to meet the energy required by the load supply in the discharge time, namely:
(5)
so the capacitance of the super capacitorC surpercap The following should be satisfied:
(6)
isolation type single-phase inverter energy storage inductor capable of increasing and decreasing voltageL m Is the ripple of the inductor current of (a)Filter capacitorC f The voltage ripple at two ends is +>Output loadR o The current of (2) isI o ，At DT s The intervals are as follows:
(7)
(8)
from formula (4), formula (7), formula (8) are jointly available:
(9)
(10)
so energy storage inductanceL m Is a sensing value of (a)And a filter capacitorC f Capacity of +.>The following should be satisfied:
(11)
(12)
formula (11), formula (12)U fmax Is a filter capacitorC f The maximum value of the output voltage is calculated,I omax for outputting loadsR o Is set in the current limit of (a).
In order to eliminate the harmonic component of the switching order as much as possible, the fundamental component is preserved,L o andC o the cut-off frequency of the composed low-pass filter isf o The fundamental wave frequency isf 1 The design principle adopted is as follows:
(13)
from the following componentsL o AndC o a low pass filter was composed whose transfer function was as follows:
(14)
(15)
(16)
(17)
the low-pass filter can be obtained by combining the formula (13), the formula (14), the formula (15), the formula (16) and the formula (17)L o AndC o the parameter ranges are as follows:
(18)
(19)
Qfor the quality factor of the low-pass filter, the loadR o Has a resistance ofAccording to->Range and selection of operationQValue, i.e. low-pass filter can be determinedL o Is +.>Parameter rangesC o Capacity of +.>Parameter ranges.
As shown in FIG. 8, simulation results show that the isolated type liftable voltage single-stage single-phase inverter topology based on supercapacitor energy storage and the control method thereof provided by the invention are used for inputting power of a power supplyP DC The fluctuation is suppressed. As shown in fig. 9, the isolated single-phase inverter has a step-up/step-down voltage regulation capability, and can realize stable ac voltage output when the super capacitor voltage fluctuates in a large range.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The super capacitor energy storage type high-overload single-phase inverter circuit is characterized by comprising a power supply, wherein the power supply is electrically connected with a first-stage DC/DC converter, the first-stage DC/DC converter is electrically connected with a super capacitor, and the super capacitor is electrically connected with the direct-current side of a second-stage isolated type liftable single-phase inverter; the second-stage isolation type single-stage single-phase inverter capable of increasing and decreasing the voltage comprises a direct-current side six-switch branch circuit, wherein the direct-current side six-switch branch circuit is electrically connected with an isolation transformer, the isolation transformer is electrically connected with an alternating-current side two-switch branch circuit, and the alternating-current side two-switch branch circuit is electrically connected with an alternating-current side filter circuit;
the direct-current side six-switch branch comprises a third semiconductor switching device (S 3 ) Fourth semiconductor switching device (S 4 ) Fifth semiconductor switching device (S 5 ) Sixth semiconductor switching device (S 6 ) Seventh semiconductor switching device (S 7 ) And an eighth semiconductor switching device (S 8 ) The method comprises the steps of carrying out a first treatment on the surface of the Wherein one end of the super capacitor is electrically connected with the third semiconductor switching device (S 3 ) And a seventh semiconductor switching device (S 7 ) The other end is electrically connected with the fourth semiconductor switching device (S 4 ) Source of (c) and eighth semiconductor switching device (S 8 ) A drain electrode of (2); fourth semiconductor switching device (S) 4 ) Is electrically connected to the drain of the third semiconductor switching device (S 3 ) Energy storage inductor of source electrode and DC side of isolation transformerL m ) Is a member of the group; seventh semiconductor switching device (S) 7 ) Is electrically connected to the fifth semiconductor switching device (S 5 ) Is a drain electrode of a fifth semiconductor switching device (S 5 ) Is electrically connected to the source of the sixth semiconductor switching device (S 6 ) Energy storage inductor between drain electrode of the transformer and DC side of isolation transformerL m ) Is arranged at the other end of the tube; sixth semiconductor switching device (S) 6 ) Is electrically connected to the eighth semiconductor switching device (S 8 ) A drain electrode of (2);
the alternating-current side two switching branches comprise a ninth semiconductor switching device (S 9 ) Ninth semiconductor switching device (S 9 ) One end of the DC side coil of the isolation transformer is electrically connected with one end of the AC side coil of the isolation transformer, and the other end of the AC side coil of the isolation transformer is electrically connected with a tenth semiconductor switching device (S) 10 ) A drain electrode of (2); tenth semiconductor switching device (S) 10 ) Is electrically connected to one end of the filter circuit, and the other end of the filter circuit is electrically connected to the ninth semiconductor switching device (S 9 ) Is a source of (c).
2. The super capacitor energy-storage type high overload single-phase inverter circuit as claimed in claim 1, wherein said filter circuit comprises a first filter capacitorC f ) First filter capacitor [ ]C f ) One end is electrically connected with the ninth semiconductor switching device (S 9 ) Source electrode and first filter inductanceL o ) A first filter capacitorC f ) Is electrically connected to the other end of the tenth semiconductor switching device (S 10 ) Source electrode and second filter capacitorC o ) One end and load ofR o ) A second filter capacitorC o ) The other end of the first filter inductor is electrically connected withL o ) And the other end and load ofR o ) And the other end of (2).
3. The super capacitor energy storage type high overload single-phase inverter circuit as claimed in claim 2, wherein said super capacitor capacitance value is；
Is the capacity value of the super capacitor->For super capacitor discharge time, < >>Discharge power for super capacitor, < >>Maximum charging voltage for super capacitor, +.>The minimum discharge voltage of the super capacitor;
inductance value of energy storage inductance LmAnd the capacitance value of the first filter capacitor Cf +.>The method meets the following conditions:
(11)
(12)
for the first filter capacitance->Maximum value of output voltage>Is used as loadR o ) Is set at the current maximum of (2); />Is an energy storage inductanceL m ) Is a ripple of the inductor current of (a); />For the first filter capacitance->Is connected with the voltage ripple at two ends of the voltage transformer; />Is a fifth semiconductor switching device (S 5 ) Is used for the switching frequency of the (c),Nthe turn ratio of the isolation transformer;
first filter inductorL o And a second filter capacitorC o The parameter ranges are as follows:
（18）
（19）;
wherein, the first filter inductorL o And a second filter capacitorC o The cut-off frequency of the composed low-pass filter isf o The fundamental wave frequency isf 1 The method comprises the steps of carrying out a first treatment on the surface of the Q is the quality factor of the low-pass filter, and the resistance of the load Ro isAccording to->The range of operation and the selected Q value, i.e. determining the low-pass filterL o Is +.>Parameter rangesC o Capacity of +.>Parameter ranges.
4. The super capacitor energy storage type high overload single phase inverter circuit of claim 1, wherein said first stage DC/DC converter is a BUCK circuit.
5. The super capacitor energy storage type high overload single phase inverter circuit as claimed in claim 4, wherein the BUCK circuit includes a first semiconductor switching device (S 1 ) Second semiconductor switching device (S 2 ) And a second filter inductance (L s ) The method comprises the steps of carrying out a first treatment on the surface of the First semiconductor switching device (S) 1 ) Is electrically connected to one end of the power supply source, a first semiconductor switching device (S 1 ) Is electrically connected to the second semiconductor switching device (S 2 ) And a second filter inductance (L) s ) Is arranged at one end of the second filter inductance (L s ) Is electrically connected to one end of the super capacitor, a second semiconductor switching device (S 2 ) The source electrode of the super capacitor is electrically connected with the other end of the power supply.
6. The super capacitor energy storage type high overload single phase inverter circuit as claimed in claim 4, wherein the third semiconductor switching device (S 3 ) Fourth semiconductor switching device (S 4 ) Fifth semiconductor switching device (S 5 ) Sixth semiconductor switching device (S 6 ) Seventh semiconductor switching device (S 7 ) And an eighth semiconductor switching device (S 8 ) Is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor.
7. The control method of the super capacitor energy storage type high overload single-phase inverter circuit is characterized in that the structure of the super capacitor energy storage type high overload single-phase inverter circuit is as shown in any one of claims 1 to 6, and the control method comprises the following steps:
in a single-phase alternating current output period, the working modes are divided into four types, wherein the working modes are a mode 1 and a mode 2 when the output voltage is in a positive half-wave state, and the working modes are a mode 3 and a mode 4 when the output voltage is in a negative half-wave state; the positive half-wave and the negative half-wave of the output voltage symmetrically run, and a fifth semiconductor switching device is arrangedS 5 ) Sixth semiconductor switching deviceS 6 ) Seventh semiconductor switching deviceS 7 ) Eighth semiconductor switching deviceS 8 ) Ninth semiconductor switching deviceS 9 ) Tenth semiconductor switching deviceS 10 ) Is of the switching frequency off s The switching period isT s Fifth semiconductor switching deviceS 5 ) And a seventh semiconductor switching deviceS 7 ) The switching signal is the same as that of the tenth semiconductor switching deviceS 10 ) Complementary, sixth semiconductor switching deviceS 6 ) And an eighth semiconductor switching deviceS 8 ) The switching signal is the same as that of the ninth semiconductor switching deviceS 9 ) Complementation; the mode 1 and mode 3 operating intervals are defined as DT s Then the working intervals of the mode 2 and the mode 4 are (1-D)T s Wherein D is the duty cycle of the semiconductor switching device, D being greater than 0 and less than 1;
the output voltage is positive half wave and the working interval is DT s The operating mode is mode 1: third semiconductor switching deviceS 3 ) A fourth semiconductor switch deviceS 4 ) Fifth semiconductor switch deviceS 5 ) Sixth semiconductor switching deviceS 6 ) Seventh semiconductor switching deviceS 7 ) Eighth semiconductor switching deviceS 8 ) Ninth semiconductor switching deviceS 9 ) Conducting and tenth semiconductor switching deviceS 10 ) Closing the super capacitor, and passing through a seventh semiconductor switching deviceS 7 ) Fifth semiconductor switch deviceS 5 ) A fourth semiconductor switch deviceS 4 ) To the energy storage inductanceL m ) Charging, at this time, the energy storage inductanceL m ) Energy storage, first filter capacitorC f ) Through the first filtering inductanceL o ) And a second filter capacitorC o ) The filter composed is loaded to the loadR o ) Supplying power;
the output voltage is positive half wave and the working interval is (1-D)T s The operating mode is mode 2: fourth semiconductor switching deviceS 4 ) Ninth semiconductor switching deviceS 9 ) Tenth semiconductor switching deviceS 10 ) Conducting and third semiconductor switch deviceS 3 ) Fifth semiconductor switch deviceS 5 ) Sixth semiconductor switching deviceS 6 ) Seventh semiconductor switching deviceS 7 ) Eighth semiconductor switching deviceS 8 ) Closing, energy storage inductanceL m ) The stored energy passes through an isolating transformerT 1 ) Ninth semiconductor switching deviceS 9 ) Tenth semiconductor switching deviceS 10 ) First filter capacitorC f ) First filter inductorL o ) And a second filter capacitorC o ) The filter composed is loaded to the loadR o ) If the energy storage inductor is poweredL m ) The stored energy is completely released before the end of the switching time of the mode 2, and the first filter capacitor is used for the timeC f ) To the energy storage inductanceL m ) Energy storage and loadR o ) Supplying power;
the output voltage is a negative half wave and the working interval is DT s The operating mode is mode 3: third semiconductor switching deviceS 3 ) Sixth semiconductor switching deviceS 6 ) First, theEight semiconductor switching devicesS 8 ) Tenth semiconductor switching deviceS 10 ) Conducting and fourth semiconductor switch deviceS 4 ) Fifth semiconductor switch deviceS 5 ) Seventh semiconductor switching deviceS 7 ) Ninth semiconductor switching deviceS 9 ) Closing the super capacitor, and passing through a third semiconductor switching deviceS 3 ) Sixth semiconductor switching deviceS 6 ) Eighth semiconductor switching deviceS 8 ) To the energy storage inductanceL m ) Charging, at this time, the energy storage inductanceL m ) Energy storage, first filter capacitorC f ) Through the first filtering inductanceL o ) And a second filter capacitorC o ) The filter composed is loaded to the loadR o ) Supplying power;
the output voltage is a negative half wave and the working interval is (1-D)T s The working mode is mode 4, the third semiconductor switching device is @ the third semiconductor switching deviceS 3 ) Ninth semiconductor switching deviceS 9 ) Tenth semiconductor switching deviceS 10 ) Conducting, switching device fourth semiconductor switching deviceS 4 ) Fifth semiconductor switch deviceS 5 ) Sixth semiconductor switching deviceS 6 ) Seventh semiconductor switching deviceS 7 ) Eighth semiconductor switching deviceS 8 ) Closing, energy storage inductanceL m ) The stored energy passes through an isolating transformerT 1 ) Ninth semiconductor switching deviceS 9 ) Tenth semiconductor switching deviceS 10 ) First filter capacitor [ ]C f ) First filter inductorL o ) And a second filter capacitorC o ) The filter composed is loaded to the loadR o ) If the energy storage inductor is poweredL m ) The stored energy is completely released before the end of the mode 4 switching time,at this time, the first filter capacitorC f ) To the energy storage inductanceL m ) Energy storage and loadR o ) And (5) supplying power.
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