CN113381632A - Non-bridge type modular inverter and control method thereof - Google Patents

Non-bridge type modular inverter and control method thereof Download PDF

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Publication number
CN113381632A
CN113381632A CN202110602924.9A CN202110602924A CN113381632A CN 113381632 A CN113381632 A CN 113381632A CN 202110602924 A CN202110602924 A CN 202110602924A CN 113381632 A CN113381632 A CN 113381632A
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switch
switch tube
tube
module
bridge
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CN113381632B (en
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王要强
王昌龙
王�义
陈天锦
王克文
梁军
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Zhengzhou University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/56—Power conversion systems, e.g. maximum power point trackers

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  • Inverter Devices (AREA)

Abstract

The invention provides a non-bridge type modular inverter and a control method thereof, wherein the non-bridge type modular inverter comprises a middle switched capacitor module, a basic switched capacitor module I, a basic switched capacitor module II, a left half-bridge module and a right half-bridge module, and the middle switched capacitor module comprises a switching tube S0Switch tube S1Switch tube S1', an electrolytic capacitor C and a diode D, wherein the circuit structures of the basic switch capacitor module I and the basic switch capacitor module II are the same; the basic switch capacitor module I comprises a switch tube SL11Switch tube SL12Switch tube SL13Switch tube SL14Switch tube SL15And an electrolytic capacitor CL1(ii) a Unlike other topologies that employ a terminal H-bridge to obtain bipolar output levels, the non-bridgeThe BSCCs with the same number are respectively placed on the two sides of the ISCC module to realize bipolar level output, so that the voltage stress of a semiconductor device is effectively reduced, and the modularized inverter has great application potential in medium-high voltage engineering.

Description

Non-bridge type modular inverter and control method thereof
Technical Field
The invention relates to the technical field of inverters, in particular to a non-bridge modular inverter and a control method thereof.
Background
In recent years, with the large-scale deployment of distributed generators, the DC-AC link has attracted much attention in the field of distributed power generation as an energy conversion interface between distributed energy resources and a power grid or an alternating current load. Particularly in the field of photovoltaic power generation, photovoltaic cells are low-voltage direct current sources, in practical engineering, a plurality of photovoltaic cells are often connected in series or in parallel to form a photovoltaic array, electric energy is output to a load or a power grid through a combiner box, a controller, a direct current distribution box, an inverter and an alternating current distribution box, the inverter plays a very important role in the photovoltaic array, and the performance of the inverter directly affects the stability of a power grid system.
The traditional multi-level inverter has three typical structures of a diode clamping type, a flying capacitor type and an H-bridge cascade type. Among them, the problem of balancing the capacitor voltage of the diode-clamped and flying capacitor-type multilevel inverters is the most concerned, which makes the modulation work of the inverters complicated; the H-bridge cascaded multilevel inverter requires a large number of isolated dc voltage sources, which limits its use in many single power application scenarios.
In order to adapt to the development requirement in the field of new energy and overcome the defects of the traditional multi-level inverter, the switched capacitor technology with the advantages of independent boosting, self-balancing of capacitor voltage and the like is applied to the multi-level inverter.
In order to solve the above problems, people are always seeking an ideal technical solution.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a non-bridge modular inverter and a control method thereof.
In order to achieve the purpose, the invention adopts the technical scheme that:
in a first aspect, the invention provides a non-bridge modular inverter disposed in a DC power source VdcThe circuit structure of the basic switched capacitor module I is the same as that of the basic switched capacitor module II;
the middle switch capacitor module comprises a switch tube S0Switch tube S1Switch tube S1', an electrolytic capacitor C, and a diode D, wherein,
the switch tube S1Drain electrodes of the two are respectively connected with a direct current power supply VdcAnd the cathode of the diode D is connected with the switching tube S0Source electrode of, the switching tube S0The drain electrode of the capacitor C is connected with the anode of an electrolytic capacitor C, and the cathode of the electrolytic capacitor C is respectively connected with the switch tube S1Source electrode of and the switching tube S1' of said switching tube S1' the source of the transistor is connected with a DC power supply VdcThe negative electrode of (1);
the basic switch capacitor module I comprises a switch tube SL11Switch tube SL12Switch tube SL13Switch tube SL14Switch tube SL15And an electrolytic capacitor CL1，
The switch tube SL11Are respectively connected with the switch tube SL13And the switching tube SL14Source electrode of, the switching tube SL11Is connected with the electrolytic capacitor CL1The anode of (1); the switch tube SL12Is connected with the electrolytic capacitor CL1The switching tube SL12Are respectively connected with the switch tube SL15And a drain electrode ofSwitch tube SL13A source electrode of (a); the switch tube SL14Is respectively connected with the cathode of a diode D in the middle switch capacitor module and the switch tube S0A source electrode of (a); the switch tube SL15Are respectively connected with a direct current power supply VdcAnd a switching tube S in the intermediate switch capacitor module1' the source electrode;
the basic switch capacitor module II comprises a switch tube SR11Switch tube SR12Switch tube SR13Switch tube SR14Switch tube SR15And an electrolytic capacitor CR1，
The switch tube SR11Are respectively connected with the switch tube SR13And the switching tube SR14Source electrode of, the switching tube SR11Is connected with the electrolytic capacitor CR1The anode of (1); the switch tube SR12Is connected with the electrolytic capacitor CR1The switching tube SR12Are respectively connected with the switch tube SR15And the switching tube SR13A source electrode of (a); the switch tube SR14Is respectively connected with the anode of the electrolytic capacitor C in the middle switch capacitor module and the switch tube S0A drain electrode of (1); the switch tube SR15Are respectively connected with a direct current power supply VdcAnd a switching tube S in the intermediate switch capacitor module1' the source electrode;
the left half-bridge module comprises a switch tube S01And a switching tube S02，
The switch tube S01The drain electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleL11Drain electrode and electrolytic capacitor CL1The switching tube S01Is connected with the switching tube S02Of the switching tube S02The source electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleL12Source electrode and electrolytic capacitor CL1A cathode of (a);
the right half bridge module comprises a switch tube S03And a switching tube S04，
The switch tube S03The drain electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleR11Drain electrode and electrolytic capacitor CR1The switching tube S03Is connected with the switching tube S04A drain electrode of (1); the switch tube S04The source electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleR12Source electrode and electrolytic capacitor CR1A cathode of (a);
and the middle point of the left half-bridge module and the right half-bridge module is used as an alternating current voltage output end of the non-bridge modular inverter.
A second aspect of the present invention provides a method of controlling a non-bridge modular inverter, the method comprising the steps of:
generating a driving signal by which to control the operation of the non-bridge modular inverter of any of claims 1 or 2 at 2n+3-3 working modes, output 2n+3-3 levels and the non-bridge modular inverter output voltage gain G-2n+2-2, wherein n represents the total number of basic switched capacitor modules i.
The invention provides a non-bridge modular inverter system, which comprises an inverter and a controller, wherein the inverter is the non-bridge modular inverter.
The invention provides a non-bridge modular inverter system, which comprises an inverter and a controller, wherein the controller executes the steps of the control method of the non-bridge modular inverter when controlling the action of a switching tube in the inverter.
A fifth aspect of the invention provides a readable storage medium having stored thereon instructions which, when executed by a processor, carry out the steps of the method of controlling a non-bridge modular inverter as described above.
Compared with the prior art, the invention has prominent substantive characteristics and remarkable progress, particularly:
1) the invention provides a non-bridge type modular inverter and a control method thereof, which are different from other topologies which adopt a tail end H bridge to obtain bipolar output level, the non-bridge type modular inverter realizes bipolar level output by respectively placing the same number of basic switch capacitor modules at two sides of a middle switch capacitor module, thereby effectively reducing the voltage stress of a semiconductor device and having huge application potential in medium-high voltage engineering;
2) the non-bridge modular inverter is expandable, the number of output voltage levels is increased by adding the same number of basic switched capacitor modules on two sides of the middle switched capacitor module, and the output gain of the inverter is improved;
3) the expansion module circuit of the non-bridge type modular inverter is simple in structure, can output more levels by fewer devices, effectively reduces the use of the devices and reduces the cost of a system; the capacitor voltage of the non-bridge type modularized inverter can be self-balanced, an additional capacitor voltage control loop is avoided, and a modulation strategy is simplified.
Drawings
FIG. 1 is a schematic diagram of an expanded non-bridge modular inverter;
FIG. 2 is a schematic diagram of a non-bridge modular inverter having 1 basic switched capacitor module I and 1 basic switched capacitor module II;
FIG. 3 is a schematic diagram of an operation mode I of the non-bridge type modular inverter shown in FIG. 2;
FIG. 4 is a schematic diagram of an operation mode II of the non-bridge type modular inverter shown in FIG. 2;
FIG. 5 is a schematic diagram of an operation mode III of the non-bridge type modular inverter shown in FIG. 2;
FIG. 6 is a schematic diagram of an operating mode IV of the unbridged modular inverter of FIG. 2;
fig. 7 is an operation schematic diagram of an operation mode v of the non-bridge modular inverter in fig. 2;
FIG. 8 is a schematic diagram of the operating mode VI of the unbridged modular inverter of FIG. 2;
FIG. 9 is a schematic diagram of an operation mode VII of the non-bridge modular inverter shown in FIG. 2;
FIG. 10 is a schematic diagram of carrier stack pulse width modulation of the non-bridge modular inverter of FIG. 2;
FIG. 11 is a graph of half-bridge voltage waveforms for the unbridged modular inverter of FIG. 2;
fig. 12 is a waveform diagram of the output voltage and load current when the non-bridge modular inverter of fig. 2 is connected to an inductive load.
Detailed Description
The technical solution of the present invention is further described in detail by the following embodiments.
Example 1
As shown in figure 2, a non-bridge type modular inverter is arranged on a direct current power supply VdcThe circuit structure of the basic switched capacitor module I is the same as that of the basic switched capacitor module II;
the middle switch capacitor module comprises a switch tube S0Switch tube S1Switch tube S1', an electrolytic capacitor C, and a diode D, wherein,
the switch tube S1Drain electrodes of the two are respectively connected with a direct current power supply VdcAnd the cathode of the diode D is connected with the switching tube S0Source electrode of, the switching tube S0The drain electrode of the capacitor C is connected with the anode of an electrolytic capacitor C, and the cathode of the electrolytic capacitor C is respectively connected with the switch tube S1Source electrode of and the switching tube S1' of said switching tube S1' the source of the transistor is connected with a DC power supply VdcThe negative electrode of (1);
the basic switch capacitor module I comprises a switch tube SL11Switch tube SL12Switch tube SL13Switch tube SL14Switch tube SL15And an electrolytic capacitor CL1，
The switch tube SL11Are respectively connected with the switch tube SL13And the switching tube SL14Source electrode of, the switching tube SL11Is connected with the electrolytic capacitor CL1The anode of (1); what is needed isThe switch tube SL12Is connected with the electrolytic capacitor CL1The switching tube SL12Are respectively connected with the switch tube SL15And the switching tube SL13A source electrode of (a); the switch tube SL14Is respectively connected with the cathode of a diode D in the middle switch capacitor module and the switch tube S0A source electrode of (a); the switch tube SL15Are respectively connected with a direct current power supply VdcAnd a switching tube S in the intermediate switch capacitor module1' the source electrode;
the basic switch capacitor module II comprises a switch tube SR11Switch tube SR12Switch tube SR13Switch tube SR14Switch tube SR15And an electrolytic capacitor CR1，
The switch tube SR11Are respectively connected with the switch tube SR13And the switching tube SR14Source electrode of, the switching tube SR11Is connected with the electrolytic capacitor CR1The anode of (1); the switch tube SR12Is connected with the electrolytic capacitor CR1The switching tube SR12Are respectively connected with the switch tube SR15And the switching tube SR13A source electrode of (a); the switch tube SR14Is respectively connected with the anode of the electrolytic capacitor C in the middle switch capacitor module and the switch tube S0A drain electrode of (1); the switch tube SR15Are respectively connected with a direct current power supply VdcAnd a switching tube S in the intermediate switch capacitor module1' the source electrode;
the left half-bridge module comprises a switch tube S01And a switching tube S02，
The switch tube S01The drain electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleL11Drain electrode and electrolytic capacitor CL1The switching tube S01Is connected with the switching tube S02Of the switching tube S02The source electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleL12Source electrode and electrolytic capacitor CL1A cathode of (a);
the right half bridge module comprises a switch tube S03And a switching tube S04，
The switch tube S03The drain electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleR11Drain electrode and electrolytic capacitor CR1The switching tube S03Is connected with the switching tube S04A drain electrode of (1); the switch tube S04The source electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleR12Source electrode and electrolytic capacitor CR1A cathode of (a);
and the middle point of the left half-bridge module and the right half-bridge module is used as an alternating current voltage output end of the non-bridge modular inverter.
It should be noted that the left half-bridge module, the basic switched capacitor module i, the middle switched capacitor module, the basic switched capacitor module ii and the right half-bridge module are connected in parallel in sequence; the inherent polarity conversion capacity of the basic switch capacitor module I and the basic switch capacitor module II achieves the purpose of polarity conversion of output level of the non-bridge type modular inverter; the left half-bridge module and the right half-bridge module are arranged on two sides of the inverter and used for finishing the output end control of the non-bridge type modularized inverter.
As shown in fig. 1, the basic switched capacitor module i and the basic switched capacitor module ii are scalable:
an expanded basic switched capacitor module I is further arranged between the left half-bridge module and the middle switched capacitor module, and an expanded basic switched capacitor module II is further arranged between the middle switched capacitor module and the right half-bridge module; the circuit structures of the expanded basic switch capacitor module I and the expanded basic switch capacitor module II are the same, and the number of the expanded basic switch capacitor modules I is equal to that of the expanded basic switch capacitor modules II.
The expanded Basic Switched Capacitor module (BSCC) i and the expanded Basic Switched Capacitor module (BSCC) ii are symmetrically arranged at two sides of the Intermediate Switched Capacitor module (ISCC).
In the expanded non-bridge type modular inverter, adjacent basic switch capacitor modules I are connected in parallel; preceding stage electrolytic capacitor CLiThe anodes of the two are respectively connected with a switching tube S of a rear-stage basic switched capacitor module IL(i+1)4Drain electrode of (1), preceding stage electrolytic capacitor CLiThe cathode of the switch tube S is connected with a rear-stage basic switch capacitor module IL(i+1)5A source electrode of (a); and the electrolytic capacitor C of the last stage basic switch capacitor module ILiAnode of the left half-bridge module is connected with a switching tube S of the left half-bridge module01The electrolytic capacitor C of the last stage basic switch capacitor module ILiThe cathode of the left half-bridge module is connected with a switching tube S of the left half-bridge module02Of the substrate.
In the expanded non-bridge type modular inverter, the connection mode of the adjacent basic switched capacitor modules II is similar, and the description is omitted.
It should be noted that, the non-bridge modular inverter is enabled to output more levels by respectively placing the same number of basic switched capacitor modules BSCC on both sides of the ISCC module, and the relationship between the total number N of the basic switched capacitor modules i and the number N of output levels of the non-bridge modular inverter is as follows: n is 2n+3-3；
The relation between the total number n of the basic switched capacitor modules I and the output voltage gain G of the non-bridge type modularized inverter is as follows: g-2n+2-2。
When the non-bridge type modularized inverter works, the switch tube S1And a switching tube S1' complementary working states; switch tube S01And a switching tube S02The working states are complementary; switch tube S03And a switching tube S04The working states are complementary; switching tube SL1nAnd a switching tube SR1nIs consistent when the inverter output level is of opposite polarity.
It should be noted that the charging voltage of the electrolytic capacitor C in the intermediate switched capacitor module is the dc input voltage VdcBasic switch circuitThe charging voltage of the capacitor in the capacitor module I or the basic switch capacitor module II is step voltage, the charging rated voltage of the rear-stage electrolytic capacitor is the superposition of the rated voltage of the front-stage capacitor and the power supply, and the electrolytic capacitor CLnAnd CRnHaving the same nominal charging voltage 2nVdc。
Example 2
On the basis of the non-bridge modular inverter in embodiment 1, the present embodiment provides a control method of the non-bridge modular inverter:
generating a driving signal by which to control the operation of the non-bridge modular inverter of any of claims 1 or 2 at 2n+3-3 working modes, output 2n+3-3 levels and the non-bridge modular inverter output voltage gain G-2n+2-2, wherein n represents the total number of basic switched capacitor modules i.
Different from other topologies which adopt a tail end H bridge to obtain the bipolar output level, the non-bridge type modular inverter realizes the bipolar level output by respectively placing the same number of basic switch capacitor modules BSCC on two sides of the middle switch capacitor module ISCC; on the basis of the non-bridge type modular inverter in fig. 1, the number of output voltage levels and the output gain of the inverter can be increased by adding the same number of basic switched capacitor modules BSCC on both sides of the middle switched capacitor module.
When generating the drive signal, performing:
adopting a carrier wave laminated pulse width modulation technology, using a sine wave as a modulation wave and using a triangular wave as a carrier wave; modulating wave with 2n+3-4 carriers are compared, a high level is output in a portion where the modulated wave is larger than the carrier, and a low level is output in a portion where the modulated wave is smaller than the carrier, thereby obtaining 2n+3And 4 rectangular pulse signals, and logically combining the obtained rectangular pulse signals to obtain gate driving signals of the switching tubes.
Further, when the drive signal is generated, the modulation ratio M of the carrier wave to the modulation wave is determined by the modulation wave ArefAnd carrier AcIs determined jointly, namely:
M＝Aref/[(2n+2-2)×Ac]
the value range of the modulation ratio M is 0< M < 1:
when [ (j-1)/(2)n+2-2)]≤M≤[j/(2n+2-2)]When j is equal to [1, 2, 3, … ], (2)n+2-2)]The non-bridge modular inverter outputs (2 xj +1) levels.
In this embodiment, taking the non-bridge modular inverter with 1 basic switched capacitor module i and 1 basic switched capacitor module ii shown in fig. 2 as an example, the non-bridge modular inverter outputs 13 levels, which can be divided into 13 working modes in one cycle, and outputs 13 levels: +6Vdc、+5Vdc、+4Vdc、 +3Vdc、+2Vdc、+Vdc、0、-Vdc、-2Vdc、-3Vdc、-4Vdc、-5Vdc、-6Vdc；
The positive half cycle of the operation of the non-bridge modular inverter corresponds to the operation mode as shown in fig. 3 to 9.
The specific working principle analysis is as follows:
working mode I: the switch tube SL12、SL15、SR12、SR15、S1′、S02And S04The other switch tubes are switched on, and at the moment, the inverter outputs bus voltage VbusIs 0:
as shown in fig. 3, in the current loop (discharge loop), the switch tube S in the basic switch capacitor module iL11、SL12、SL15And a switching tube S of the left half-bridge module01And S02Are respectively subjected to gate-source voltage VGSL11、VGSL12、VGSL15、VGS01And VGS02Driven, the other switching tubes remain in the on or off state as shown in fig. 10. When switching tube SL11、SL12、SL15、S01And S02In the alternate switching state, the inverter output states shown in fig. 3 and 4 are alternately switched.
And working mode II: the switch tube SL11、SL14、SR12、SR15、S1′、S01And S04Conducting, and turning off the other switching tubes;
in the state shown in FIG. 4, the capacitor C is connected to the power supply VdcCharging in parallel, at which time the inverter outputs a bus voltage VbusIs + Vdc。
And working mode III: the switch tube SL12、SL14、SL15、SR14、SR15、S0、S1、S01And S04Conducting, and turning off the other switching tubes; at this time, the inverter outputs a bus voltage VbusIs +2Vdc；
In the state shown in FIG. 5, the switching tube S in the inverter module circuit is in the current loopL11、SL12、SL15、 SR12、S0、S1And S1' respectively subjected to gate-source voltages VGSL11、VGSL12、VGSL15、VGSR12、 VGS0、VGS1And VGS1' drive, the other switching tubes remain in the on or off state as shown in fig. 10. When the switching tubes alternately switch states, the inverter output level switches between fig. 4 and fig. 5. In FIG. 5, the capacitor VCL1And VCR1Respectively charged by a series combination of a power supply and a capacitor C.
And working mode IV: the switch tube SL12、SL13、SL14、SR12、SR15、S1′、S01And S04The other switching tubes are switched off, and the diode D is cut off; at this time, the inverter outputs a bus voltage VbusIs +3Vdc；
As shown in fig. 6, in the current loop, the switch tube S in the inverter module circuitL13、SL15、 SR12、SR14、S0、S1And S1' respectively subjected to gate-source voltages VGSL13、VGSL15、VGSR12、VGSR14、 VGS0、VGS1And VGS1' drive, the other switch tube maintains the on or off state. When the switching tubes alternately switch states, the inverter output level switches between fig. 5 and fig. 6. In the state shown in FIG. 6, the capacitor CR1And a power supply VdcCapacitor C in parallel charging and discharging circuitL1Participating in the inverter output.
And (3) working mode V: the switch tube SL12、SL14、SL15、SR11、SR13、SR15、S0、S1、S01And S04The other switching tubes are switched off, and the diode D is cut off; inverter output bus voltage VbusIs +4Vdc。
As shown in fig. 7, in the current loop, the switch tube S in the inverter module circuitL13、SL15、 SR11、SR12、SR13、S0、S1And S1' respectively subjected to gate-source voltages VGSL13、VGSL15、VGSR11、VGSR12、VGSR13、VGS0、VGS1And VGS1' drive, the other switch tube maintains the on or off state. When the switching tubes alternately switch states, the inverter output level switches between fig. 6 and fig. 7. In the state shown in FIG. 7, the capacitor CL1A capacitor C in the circuit charged and discharged by the series combination of the power supply and the capacitor CR1Participating in the inverter output.
Working mode VI: the switch tube SL12、SL13、SL14、SR11、SR13、SR15、S1′、S01And S04Conducting, and turning off the other switching tubes; inverter output bus voltage VbusIs +5Vdc。
As shown in fig. 8, in the current loop, the switch tube S in the inverter module circuitL13、SL15、 S0、S1And S1' respectively subjected to gate-source voltages VGSL13、VGSL15、VGS0、VGS1And VGS1' drive, the other switch tube maintains the on or off state. When the switching tubes alternately switch states, the inverter output level switches between fig. 7 and fig. 8. In the state shown in FIG. 8, the capacitor C is charged to V in parallel with the power supplydcCapacitor C in the discharge circuitL1And CR1Participating in the inverter output.
The working mode VII is as follows: the switch tube SL12、SL13、SL14、SR11、SR13、SR15、S0、S1、 S01And S04The other switching tubes are switched off, and the diode D is cut off; inverter output bus voltage VbusIs +6Vdc；
As shown in fig. 9, in the current loop, the switch tube S of the inverter module circuit0、S1And S1' respectively subjected to gate-source voltages VGS0、VGS1And VGS1' drive, the other switch tube maintains the on or off state. When the switching tubes alternately switch states, the inverter output level switches between fig. 8 and fig. 8. The state shown in FIG. 9, the capacitors C, C in the discharge circuitL1And CR1Participating in the inverter output.
In the positive half working period, the non-bridge type modularized inverter sequentially changes from a working mode I, a working mode II, a working mode III, a working mode IV, a working mode V, a working mode VI, a working mode VII, a working mode VI, a working mode V, a working mode IV, a working mode III, a working mode II to a working mode I and outputs 0, + Vdc、+2Vdc、+3Vdc、+4Vdc、+5Vdc、+6Vdc、+5Vdc、+4Vdc、 +3Vdc、+2Vdc、+V dc0; in order to reduce the switching frequency and reduce the loss, when the working mode is switched, the other switching tubes do not participate in the current loop except for the switching tube in the current loop which needs to be operated, so that the current state (the state in the previous working mode) can be maintained unchanged.
In the negative half working period, the non-bridge modular inversionThe variators are sequentially changed from a working mode I, a working mode VIII, a working mode IX, a working mode X, a working mode XI, a working mode XII, a working mode XIII, a working mode XII, a working mode XI, a working mode X, a working mode IX, a working mode VIII to a working mode I by 0 and Vdc、-2Vdc、-3Vdc、-4Vdc、-5Vdc、-6Vdc、-5Vdc、-4Vdc、 -3Vdc、-2Vdc、-V dc0; the switching states corresponding to the operating modes viii, ix, x, xi, xii, XIII are shown in the following table, and this embodiment is not described in detail.
Figure RE-RE-GDA0003186877340000111
On the basis of the non-bridge modular inverter circuit, the embodiment also provides a specific implementation mode of the driving signals of each switching tube in a carrier stacked pulse width modulation mode;
as shown in fig. 10, based on the non-bridge modular inverter in fig. 2, this embodiment further provides a specific implementation of the driving signals of the switching tubes in the carrier stacked pulse width modulation mode:
12 sets of rectangular pulse signals are obtained by comparing 12 triangular carrier waves with the same frequency (for example, 80 times the frequency of the modulation wave), the same phase and the same amplitude Ac with a sinusoidal modulation wave with the amplitude Aref, outputting a high level at a part of the modulation wave larger than the carrier wave and outputting a low level at a part of the modulation wave smaller than the carrier wave. And carrying out appropriate logic combination on the obtained rectangular pulse signals to obtain gate driving signals of each switching tube. The logical combination formula is shown in the following table:
Figure RE-RE-GDA0003186877340000121
Figure RE-RE-GDA0003186877340000122
S1′＝S1
Figure RE-RE-GDA0003186877340000123
Figure RE-RE-GDA0003186877340000124
Figure RE-RE-GDA0003186877340000125
Figure RE-RE-GDA0003186877340000126
Figure RE-RE-GDA0003186877340000127
Figure RE-RE-GDA0003186877340000128
Figure RE-RE-GDA0003186877340000129
Figure RE-RE-GDA00031868773400001210
Figure RE-RE-GDA00031868773400001211
Figure RE-RE-GDA00031868773400001212
Figure RE-RE-GDA00031868773400001213
Figure RE-RE-GDA00031868773400001214
in this embodiment, the modulation ratio M of the inverter is determined by the amplitude of the modulation wave and the amplitude of the carrier wave, that is: m ═ Aref/[6×Ac]；
The value range of the modulation ratio M is more than 0 and less than or equal to 1: when M is greater than 1/6 and less than or equal to 2/6, the inverter outputs 3 levels; when M is greater than 2/6 and less than or equal to 3/6, the inverter outputs 5 levels; when M is greater than 2/6 and less than or equal to 3/6, the inverter outputs 7 levels; when M is greater than 3/6 and less than or equal to 4/6, the inverter outputs 9 levels; when M is greater than 4/6 and less than or equal to 5/6, the inverter outputs 11 levels; when 5/6< M ≦ 1, the inverter outputs 13 levels.
In this embodiment, the 13-level inverter device was verified by simulation based on the modulation method, and fig. 11 and 12 are a half-bridge voltage waveform diagram and an output voltage and load current waveform diagram of the inverter resistive load, respectively. As can be seen from the simulation result, the peak voltage of the two half-bridges of the inverter is 100V, and the valley voltage is-50V, which is consistent with the theoretical analysis of the working principle of the inverter; as can be seen from the simulation result of FIG. 12, the inverter outputs 13-level voltage, the peak voltage is 150V, the inverter outputs the boost gain of 6, the load current is in a sine wave shape and lags behind the output voltage by a certain angle, and the capability of the proposed topology with inductive load is verified.
Example 3
The embodiment provides a non-bridge modular inverter system, which comprises an inverter and a controller, wherein the inverter is the non-bridge modular inverter.
The present embodiment also provides another specific implementation of the non-bridge modular inverter system, which includes an inverter and a controller, where the controller executes the steps of the control method of the non-bridge modular inverter when controlling the switching tubes in the inverter to operate.
The present embodiment presents a specific implementation of a readable storage medium having stored thereon instructions that, when executed by a processor, implement the steps of the control method of the non-bridge modular inverter as described above.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed system and method may be implemented in other ways. For example, the above-described system embodiments are merely illustrative, and for example, the division of the above-described modules is only one logical functional division, and other divisions may be realized in practice, for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not executed.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated module may be stored in a computer-readable storage medium if it is implemented in the form of a software functional unit and sold or used as a separate product. Based on such understanding, all or part of the flow in the method of the embodiments described above may be implemented by a computer program, which may be stored in a computer-readable storage medium and can implement the steps of the embodiments of the methods described above when the computer program is executed by a processor. The computer program includes computer program code, and the computer program code may be in a source code form, an object code form, an executable file or some intermediate form.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention and not to limit it; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the present invention, it is intended to cover all aspects of the invention as defined by the appended claims.

Claims (8)

1. A non-bridge type modularized inverter arranged on a DC power supply VdcAnd the load, its characterized in that: the circuit comprises a middle switched capacitor module, a basic switched capacitor module I, a basic switched capacitor module II, a left half-bridge module and a right half-bridge module, wherein the basic switched capacitor module I and the basic switched capacitor module II have the same circuit structure;
the middle switch capacitor module comprises a switch tube S0Switch tube S1Switch tube S1', an electrolytic capacitor C, and a diode D, wherein,
the switch tube S1Drain electrodes of the two are respectively connected with a direct current power supply VdcAnd the cathode of the diode D is connected with the switching tube S0Source electrode of, the switching tube S0The drain electrode of the capacitor C is connected with the anode of an electrolytic capacitor C, and the cathode of the electrolytic capacitor C is respectively connected with the switch tube S1Source electrode of and the switching tube S1' of said switching tube S1' the source of the transistor is connected with a DC power supply VdcThe negative electrode of (1);
the basic switch capacitor module I comprises a switch tube SL11Switch tube SL12Switch tube SL13Switch tube SL14Switch tube SL15And an electrolytic capacitor CL1，
The switch tube SL11Are respectively connected with the switch tube SL13And the switching tube SL14Source electrode of, the switching tube SL11Is connected with the electrolytic capacitor CL1The anode of (1); the switch tube SL12Is connected with the electrolytic capacitor CL1The switching tube SL12Are respectively connected with the switch tube SL15And the switching tube SL13A source electrode of (a); the switch tube SL14Is respectively connected with the cathode of a diode D in the middle switch capacitor module and the switch tube S0A source electrode of (a); the switch tube SL15Are respectively connected with a direct current power supply VdcAnd a switching tube S in the intermediate switch capacitor module1' the source electrode;
the basic switch capacitor module II comprises a switch tube SR11Switch tube SR12Switch tube SR13Switch tube SR14Switch tube SR15And an electrolytic capacitor CR1，
The switch tube SR11Are respectively connected with the switch tube SR13And the switching tube SR14Source electrode of, the switching tube SR11Is connected with the electrolytic capacitor CR1The anode of (1); the switch tube SR12Is connected with the electrolytic capacitor CR1The switching tube SR12Are respectively connected with the switch tube SR15And the switching tube SR13A source electrode of (a); the switch tube SR14Is respectively connected with the anode of the electrolytic capacitor C in the middle switch capacitor module and the switch tube S0A drain electrode of (1); the switch tube SR15Are respectively connected with a direct current power supply VdcAnd a switching tube S in the intermediate switch capacitor module1' ofA source electrode;
the left half-bridge module comprises a switch tube S01And a switching tube S02，
The switch tube S01The drain electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleL11Drain electrode and electrolytic capacitor CL1The switching tube S01Is connected with the switching tube S02Of the switching tube S02The source electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleL12Source electrode and electrolytic capacitor CL1A cathode of (a);
the right half bridge module comprises a switch tube S03And a switching tube S04，
The switch tube S03The drain electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleR11Drain electrode and electrolytic capacitor CR1The switching tube S03Is connected with the switching tube S04A drain electrode of (1); the switch tube S04The source electrodes of the intermediate switch capacitor modules are respectively connected with a switch tube S in the intermediate switch capacitor moduleR12Source electrode and electrolytic capacitor CR1A cathode of (a);
and the middle point of the left half-bridge module and the right half-bridge module is used as an alternating current voltage output end of the non-bridge modular inverter.
2. The non-bridge modular inverter of claim 1, wherein: an expanded basic switched capacitor module I is further arranged between the left half-bridge module and the middle switched capacitor module, and an expanded basic switched capacitor module II is further arranged between the middle switched capacitor module and the right half-bridge module;
the circuit structures of the expanded basic switch capacitor module I and the expanded basic switch capacitor module II are the same, and the number of the expanded basic switch capacitor modules I is equal to that of the expanded basic switch capacitor modules II.
3. A control method of a non-bridge modular inverter is characterized in that: generating a drive signal, onControlling the non-bridge modular inverter of any of claims 1 or 2 to operate at 2 by said driving signaln+3-3 working modes, output 2n+3-3 levels and the non-bridge modular inverter output voltage gain G =2n+2-2, wherein n represents the total number of basic switched capacitor modules i.
4. The method of claim 3, wherein the generating the driving signal comprises:
adopting a carrier wave laminated pulse width modulation technology, using a sine wave as a modulation wave and using a triangular wave as a carrier wave; modulating wave with 2n+3-4 carriers are compared, a high level is output in a portion where the modulated wave is larger than the carrier, and a low level is output in a portion where the modulated wave is smaller than the carrier, thereby obtaining 2n+3And 4 rectangular pulse signals, and logically combining the obtained rectangular pulse signals to obtain gate driving signals of the switching tubes.
5. The method of claim 3, wherein the modulation ratio M of the carrier wave to the modulation wave is determined by the modulation wave A when the driving signal is generatedrefAnd carrier AcIs determined jointly, namely:
M=Aref/[(2n+2-2)×Ac]
the value range of the modulation ratio M is 0< M < 1:
when [ (j-1)/(2)n+2-2)]≤M≤[j/(2n+2-2)]When j is equal to [1, 2, 3, … ], (2)n+2-2) ]The non-bridge modular inverter outputs (2 xj +1) levels.
6. A non-bridge type modularization inverter system comprises an inverter and a controller, and is characterized in that: the inverter is the non-bridge modular inverter of any of claims 1 or 2.
7. A non-bridge type modularization inverter system comprises an inverter and a controller, and is characterized in that: the steps of the method for controlling a non-bridge modular inverter according to any of claims 3-5 are performed when the controller controls the operation of the switching tubes in the inverter.
8. A readable storage medium having instructions stored thereon, characterized in that: the instructions, when executed by a processor, implement the steps of a method of controlling a non-bridge modular inverter as claimed in any one of claims 3 to 5.
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