CN110635027A - Semiconductor device based on MXene electrode and preparation method thereof - Google Patents
Semiconductor device based on MXene electrode and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
Abstract
The invention discloses a semiconductor device based on MXene electrode and a preparation method thereof, wherein the structure of the semiconductor device comprises the following components from bottom to top: the solar cell comprises a substrate material, an MXene conductive film, a semiconductor layer and a top electrode layer. The invention changes the three-layer structure of the semiconductor-dielectric layer-electrode which is commonly used for reducing the Fermi pinning in the prior art into the two-layer structure of the semiconductor-electrode, thereby simplifying the process and reducing the cost; the used electrode MXene material can change the type and content of surface groups through simple fine adjustment or processing, and purposefully optimizes and improves the performance of the material, so that the Fermi pinning effect between an electrode and a semiconductor is reduced to the maximum extent.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device based on an MXene electrode and a preparation method thereof.
Background
In the field of semiconductor electronics, metal electrodes are media for realizing current input and output of semiconductor devices and integrated circuits, and are widely applied to preparation of electronic devices. However, due to the fact that lattice defects, electrode penetration and other factors exist on the surface of the semiconductor, lattice mismatch always exists when metal and the semiconductor are contacted, and a high-density surface state is generated in a semiconductor forbidden band, so that the Schottky barrier height is completely independent of a metal work function, the Fermi level of the semiconductor is pinned at a certain position, the actual value of the barrier height is not consistent with the theoretical value, and the Fermi level pinning effect of the metal-semiconductor is achieved. The Fermi pinning effect is widely existed in the contact interface of metal and semiconductor, so that the contact resistance of the device is increased, the energy consumption is increased, and the performance of the semiconductor device is greatly influenced.
The current method for reducing the pinning effect is mainly realized by inserting an ultra-thin dielectric layer between metal and semiconductor. The dielectric layer often used at present is a high dielectric constant oxide such as Si3N4，Al2O3，Ta2O3，TiO2，HfO2，ZrO2And the like. However, at present, this method not only involves at least three substances, but also involves a dielectric layer requiring a sputtering or atomic layer deposition process, which increases the complexity of device fabrication, and also requires a large amount of work to find a suitable dielectric layer.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a semiconductor device based on an MXene electrode and a method for manufacturing the same, aiming at solving the problems that in the semiconductor device and the integrated circuit in the prior art, an ultra-thin dielectric layer needs to be inserted between a metal and a semiconductor to reduce the pinning effect between the metal electrode and the semiconductor, the complexity of device manufacturing is increased, and huge workload is required to find a suitable dielectric layer.
The technical scheme adopted by the invention for solving the technical problem is as follows: an MXene electrode-based semiconductor device, wherein the semiconductor device comprises from bottom to top: the solar cell comprises a substrate material, an MXene conductive film, a semiconductor layer and a top electrode layer.
The MXene electrode-based semiconductor device is characterized in that the general formula of MXene is Mn+1XnTX(ii) a Wherein M is a transition metal, n is 1, 2 or 3, X is one or two of carbon or nitrogen, TXAre surface groups including-OH, -O and-F.
The MXene electrode-based semiconductor device comprises an MXene substrate, wherein the MXene substrate comprises 5% -20% of-O.
The semiconductor device based on the MXene electrode, wherein the MXene is Ti3C2TX、Ti2CTX、Ti2CTX、V2CTX，Nb2CTX，Ti3CNTX，Ta4C3TX，Nb4C3TX，(V0.5,Cr0.5)3C2TX，(Ti0.5,Nb0.5)2CTX，Mo2TiC2TX，Mo2CTX，Ti4N3TX，Zr3C2TX，V2NTX，Mo2NTX，Zr3C2TX，Ti2NTXOne or more of (a).
The semiconductor device based on the MXene electrode is characterized in that the substrate material is glass or SiO2Mica, quartz, polymer film, fabric.
The MXene electrode-based semiconductor device is characterized in that the semiconductor layer is one or more of a binary or ternary oxide semiconductor, an inorganic doped semiconductor, an organic small molecule semiconductor and a polymer semiconductor.
The preparation method of the MXene electrode-based semiconductor device comprises the following steps:
A. depositing MXene solution on the surface of a substrate material to obtain an MXene conductive film;
B. depositing a semiconductor material on the surface of the MXene conductive film to form a semiconductor layer;
C. and depositing a top electrode material on the surface of the semiconductor layer to obtain the MXene electrode-based semiconductor device.
The preparation method of the semiconductor device based on the MXene electrode comprises the following steps: adding an etching agent into MAX, etching for 1-96 h at 20-80 ℃ to obtain an MXene material, and dissolving the MXene material in a solvent to prepare an MXene solution with the concentration of 2-5 mg/mL.
The preparation method of the semiconductor device based on the MXene electrode comprises the following steps of using LiF/HCl, HF or NH as the etching agent4HF2One or more of; the concentration of the etching agent is 3% -50%.
The preparation method of the MXene electrode-based semiconductor device comprises the following steps of adding an etchant into MAX, and etching at 20-80 ℃ for 1-96 hours to obtain an MXene material:
and placing the MXene material in air with the humidity of 40-70%, and heating to obtain MXene materials with different-O contents.
The invention has the beneficial effects that: compared with the prior art, the method has the following prominent substantive characteristics and remarkable progress:
(1) the MXene material is directly used as an electrode, the three-layer structure of the semiconductor-dielectric layer-electrode in the prior art is changed into the two-layer structure of the semiconductor-electrode, the process is simplified, and the cost is reduced;
(2) the MXene material of the electrode used by the invention can change the species and the content of surface groups through simple fine adjustment or processing, and purposefully optimize and improve the performance of the material, so that the Fermi pinning effect between the electrode and a semiconductor is reduced to the maximum extent, and a device with optimal performance is obtained;
(3) the electrode MXene materials used by the invention are various in types and film forming modes, and the MXene materials and the film forming methods of proper types can be selected according to the properties of the semiconductor, so that the damage of the semiconductor in the device preparation process can be reduced to the maximum extent on the basis of ensuring the performance, and the performance of the device is further ensured.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor device based on an MXene electrode according to the present invention;
fig. 2 is an I-V curve diagram of a semiconductor device based on an MXene electrode synthesized by the preparation method of the invention.
Detailed Description
The invention provides a semiconductor device based on MXene electrode and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and advantages of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The semiconductor device includes, but is not limited to, resistive random access memory, flash memory, transistor, diode, triode, and other devices or integrated circuits in which all semiconductors are in contact with electrodes.
In the semiconductor device in the prior art, a method for reducing the fermi pinning effect between metal and semiconductor generally inserts an ultrathin dielectric layer between metal and semiconductor, the dielectric layer needs to be prepared by sputtering or atomic layer deposition and the like, the complexity of device preparation is increased, and in addition, a large amount of time and workload are needed to find a proper dielectric layer between different metal and semiconductor. In order to solve the above problem, the present embodiment provides a semiconductor device based on an MXene electrode, specifically as shown in fig. 1, the semiconductor device sequentially includes, from bottom to top: the MXene conductive film comprises a base material 10 and an MXene conductive film 20 deposited on the surface of the base material 10; a semiconductor layer 30 deposited on the surface of the MXene conductive film 20; a top electrode layer 40 deposited on the surface of the semiconductor layer 30. The semiconductor device in the embodiment adopts MXene materials to directly contact with the semiconductor layer as the electrode so as to reduce the Fermi pinning effect, the original three-layer structure of the semiconductor, the dielectric layer and the electrode is changed into the two-layer structure of the semiconductor and the electrode, and preparation procedures of sputtering or atomic layer deposition and the like of the dielectric layer are omitted, so that the process of the semiconductor device is simplified, and the generation cost is saved.
Specifically, the general formula of MXene in this embodiment is Mn+1XnTXWherein n is 1,2. Or 3; m is one or more of transition metals such as Ti, V, Cr, Nb, Mo and the like; x is one or two of carbon or nitrogen; t isXIs MXene surface group, and is a mixture of groups of-OH, -O, -F and the like in different proportions. MXene is a class of two-dimensional inorganic compounds consisting of a few atomic layer thick of a transition metal carbide, nitride or carbonitride. The material can be obtained by etching MAX through a simple chemical etching method (HF, LiF + HCl and the like), and has good metal conductivity. In addition, the MXene material can be formed on a semiconductor through the processes of a solution method, an LB method, an interface method, a spraying method and the like, and compared with the methods of ALD, magnetron sputtering and the like, the MXene material has the advantages of lower equipment requirement, various processes and wide selection range.
In specific implementation, the content of-O in MXene can be adjusted by a synthetic modification method or a post-synthetic oxidation modification method. The synthesis modification method is characterized in that an etchant with different concentrations is added in the synthesis process of the MXene material to adjust the-O content of the MXene. Specifically, the lower the concentration of the etchant, the higher the content of — O in the MXene. For example, when the etchant is HF, a lower concentration of HF, such as 10% concentration, is used if a high content of-O in MXene is desired, whereas a higher concentration of HF, such as 50% concentration, is used if a low content of-O in MXene is desired. Preferably, the content of-O in MXene in the embodiment is 5-20%.
Further, the synthesis post-oxidation modification method is to place the prepared MXene material in humid air, and adjust the content of-O in the MXene by controlling the heating time. Specifically, the longer the heating time, the higher the content of — O in the MXene. For example, when the heating temperature is 50 ℃, the MXene material is placed in humid air, and the MXene material with high-O content is obtained by heating at 50 ℃ for one day or more, and conversely, the MXene material with low-O content is obtained by heating at 50 ℃ for a plurality of hours, such as 3 hours. By changing the concentration of the etchant or the heating time of the MXene material in humid air, the content of the surface groups of the MXene material can be changed, and MXene materials with different content of groups have different work functions. Due to the richness of the MXene material composition and the adjustability of the work function, the appropriate MXene material can be selected according to the energy band structure of the semiconductor and directly used as the electrode, so that the Fermi level pinning effect is reduced, a dielectric layer between the semiconductor and the electrode is omitted, the process is simple, and the cost is low. Preferably, in the embodiment, the humidity of the humid air is 40% -70%, and the heating temperature is 40-60 ℃.
Further, MXene in this example is Ti3C2TX、Ti2CTX、Ti2CTX、V2CTX，Nb2CTX，Ti3CNTX，Ta4C3TX，Nb4C3TX，(V0.5,Cr0.5)3C2TX，(Ti0.5,Nb0.5)2CTX，Mo2TiC2TX，Mo2CTX，Ti4N3TX，Zr3C2TX，V2NTX，Mo2NTX，Zr3C2TX，Ti2NTXOne or more of (a).
Further, in the present embodiment, the substrate material 10 is glass or SiO2One or more of mica, quartz, polymer film, fabric, and the like, rigid or flexible substrate. The MXene conductive thin film 20 is deposited on the surface of the base material 10 by spin coating, a solution interface method, a stamping method, a spraying method and the like, and an appropriate MXene film forming method is selected according to the properties of the semiconductor layer. The semiconductor layer 30 is one or more of a binary or ternary oxide semiconductor, an inorganic doped semiconductor, an organic small molecule semiconductor and a polymer semiconductor, and the semiconductor layer 30 is deposited on the surface of the MXene conductive film 20 by evaporation, magnetron sputtering, spin coating, atomic layer deposition, in-situ growth, mechanical transfer and other methods. For example, when the semiconductor layer 30 is an IGZO (indium gallium zinc oxide) film, the MXene conductive film 20 is Ti3C2When the Tx conductive film is used, the IGZO film is loaded on Ti by a magnetron sputtering method3C2Tx conductive film surface. The top electrode layer 40 may be inorganicAnd organic or organic-inorganic hybrid conductive materials, and the top electrode layer 40 can be loaded on the surface of the semiconductor layer 30 by selecting methods such as thermal evaporation, electron beam evaporation, magnetron sputtering, mechanical transfer and the like according to the specific top electrode material used. For example, when the top electrode layer 40 is an aluminum electrode, the aluminum electrode can be deposited on the surface of the semiconductor layer 30 by thermal evaporation at a rate of 0.2A/s.
In addition, the invention also provides a preparation method of the semiconductor device based on the MXene electrode, which comprises the following steps:
s1, depositing the MXene solution on the surface of the substrate material to obtain the MXene conductive film;
s2, depositing a semiconductor material on the surface of the MXene conductive film to form a semiconductor layer;
and S3, depositing a top electrode material on the surface of the semiconductor layer to obtain the MXene electrode-based semiconductor device.
In specific implementation, the MXene material is prepared by etching MAX with an etchant by using MAX as a raw material. The MAX has a general formula of Mn+1AXnWherein n is 1, 2 or 3, M is a transition metal, a is a group IIIA or IVA element, and X is one or both of carbon and nitrogen. Research shows that X atoms in the MAX crystal structure are filled in octahedral gaps formed by M atoms, an A atomic layer exists in alternating sheets formed by M and X in a similar intercalation mode, M-X bonds mainly comprise covalent bonds and ionic bonds, and the strength of the bonding bonds is very high; the M-A bond and the A-A bond have relatively many metal bond components and are relatively weak, so that the layer A atoms have the highest reactivity. Although the M-A bond and the M-X bond are relatively weak, the bonding force is still strong, so that MXene cannot be prepared by a micromechanical stripping method, and only MXene can be prepared by etching MAX by a chemical liquid phase method. For example, the raw material MAX may be Ti3SiC2、Ti2AlC、Ti2SiC、V2AlC，Nb2AlC，Ti3AlCN，Ta4AlC3，Nb4AlC，(V0.5,Cr0.5)3AlC2，(Ti0.5,Nb0.5)2AlC，Mo2TiAlC2，Mo2AlC，Ti4AlN3，Zr3AlC2，V2AlN，Mo2AlN，Zr3AlC2，Ti2AlN and the like, and the corresponding products obtained by adding the etching agent are respectively Ti3C2TX、Ti2CTX、Ti2CTX、V2CTX，Nb2CTX，Ti3CNTX，Ta4C3TX，Nb4C3TX，(V0.5,Cr0.5)3C2TX，(Ti0.5,Nb0.5)2CTX，Mo2TiC2TX，Mo2CTX，Ti4N3TX，Zr3C2TX，V2NTX，Mo2NTX，Zr3C2TX，Ti2NTXAnd the like.
In a specific embodiment, the etchant is mixed solution of LiF/HCl, HF, NH4HF2One or more of (a). Etching at normal temperature or under heating condition according to different MAX raw materials, wherein the etching temperature is 20-80 ℃, the etching time is 1-96 h, and after the etching is finished, a multilayer MXene material can be obtained by acid washing, water washing and centrifugation or after the etching is finished, pure water is added, and the stirring is carried out manually for 10-30 min to obtain a few-layer MXene material.
In specific implementation, in order to reduce the fermi level pinning effect between the electrode and the semiconductor, the content of-O in MXene needs to be adjusted in this embodiment. The specific adjusting process is to adjust the-O content in MXene by adjusting the concentration of an etchant in the synthesis process of the MXene material, the concentration of the etchant is generally selected to be 10% -50%, and the higher the concentration of the etchant is, the lower the-O content in the MXene is. If the concentration of the etchant added in the synthesis process of the MXene material is insufficient, so that the content of-O in the prepared MXene cannot meet the requirement, after the preparation of the MXene material is finished, the MXene material can be placed in humid air, and the content of-O in the MXene can be further adjusted. Specifically, the MXene material is placed in humid air to be heated for a period of time, the heating temperature is generally 40-60 ℃, preferably 50 ℃, and if the MXene material with high-O content is required to be obtained, the MXene material can be heated in the humid air for a long time, such as more than 1 day; if MXene materials with low-O content are required, the MXene materials can be heated in humid air for a short time, such as 1-3 h. The performance of the material is purposefully optimized and improved by adjusting the content of-O in MXene, so that the Fermi level pinning effect between an electrode and a semiconductor is reduced to the maximum extent.
Further, the prepared MXene material is prepared into MXene solution, wherein the concentration of the MXene solution is 2-5mg/mL, and the solvent can be pure water, alcohol and the like. Depositing the prepared MXene solution on the surface of a substrate material to form an MXene conductive film, wherein the substrate material is glass or SiO2And selecting a proper MXene film forming method according to the properties of different MXene materials, such as a liquid-liquid interface method, a stamping method, a spraying method, a spin coating method and the like. For example, MXene material is Ti3C2TxWith SiO2As a base material, Ti was applied by spin coating3C2TxDeposited on SiO2On the substrate, spin-coating at speed 500-3C2TxA conductive film. In addition, it is within the protection scope of the present invention to deposit other electrodes on the upper surface or the lower surface of the MXene conductive film, such as inorganic, organic or organic-inorganic hybrid conductive material as a lead wire or a double-layer electrode to prepare a device electrode to reduce the fermi level pinning effect between the electrode and the semiconductor.
In specific implementation, after the MXene conductive film is deposited on the surface of the substrate material, a semiconductor layer is deposited on the surface of the MXene conductive film by methods such as evaporation, magnetron sputtering, spin coating, atomic layer deposition, in-situ growth, mechanical transfer and the like, wherein the semiconductor layer can be an inorganic, organic or organic-inorganic hybrid semiconductor, such as IGZO, and the IGZO film is deposited on the surface of the MXene conductive film by a magnetron sputtering method.
Further, after a semiconductor layer is deposited on the surface of the MXene conductive film, a top electrode layer is deposited on the surface of the semiconductor layer, wherein the top electrode layer can be made of inorganic, organic or organic-inorganic hybrid conductive materials, and the top electrode layer can be deposited on the surface of the semiconductor layer by adopting methods such as thermal evaporation, electron beam evaporation, magnetron sputtering, mechanical transfer and the like according to specific used electrodes.
The invention is further illustrated by the following specific examples.
A method for preparing semiconductor device with MXene as electrode comprises using IGZO semiconductor (indium gallium zinc oxide) as semiconductor layer, Ti as well as Ti as anode and cathode3C2TxFor an MXene conductive film, a resistive random access memory device with a sandwich structure is prepared, and the Fermi pinning effect of the resistive random access memory device is researched by researching a current voltage curve, and the resistive random access memory device specifically comprises the following steps:
(1)Ti3C2Tx(wherein, TxLower content of medium-O) preparation:
with Ti3AlC2Etching with 50% HF as etchant at room temperature (20 deg.C) for 24 hr, acid washing (1mol/L HCl aqueous solution for 3 times), water washing (pure water washing until pH of system is raised to about 5), centrifuging (1000rpm10min) to obtain multilayer MXene material, adding pure water, and manually shaking for 10min to obtain small-layer Ti3C2TxA material.
(2)Ti3C2Tx(wherein, TxHigher content of medium-O) preparation:
the method comprises the following steps: with Ti3AlC2Etching with 10% HF as etchant at room temperature (20 deg.C) for 24 hr, acid washing (1mol/L HCl aqueous solution for 3 times), water washing (pure water washing until pH of system is raised to about 5), centrifuging (1000rpm for 10min) to obtain multilayer MXene material, adding pure water, and manually shaking for 10min to obtain small-layer Ti3C2TxA material.
The method 2 comprises the following steps: etching with 50% HF as etching agent to obtain Ti with lower MXene surface O group content3C2TxHeating in humid air at 50 deg.C for 3 hr to slowly oxidize MXene material to obtain TxHigher content of medium ═ OTi3C2TxA material.
(3)Ti3C2TxPreparing a film:
preparing Ti with the concentration of 5mg/mL3C2Tx(TxHigh or low content of medium-O) solution, with SiO2Spin coating (spin coating at 1000rpm for 60s and at 2000rpm for 5s) and annealing (vacuum annealing at 120 deg.C for 30min) to obtain Ti3C2TxA conductive film.
(4) Preparing an IGZO thin film:
and preparing the IGZO film by adopting a magnetron sputtering method.
(5) Top electrode evaporation:
top electrode deposition (Al electrode, deposition at 0.2A/s rate) was performed by thermal deposition.
(6) And (3) testing:
the I-V curve of the device is tested by using a semiconductor analyzer to obtain a result, the test result is shown in figure 2, before the SET voltage, the current of the resistive random access memory device taking MXene as an electrode is obviously larger than that of a metal electrode, the SET voltage is reduced, and the SET voltage is further reduced along with the further increase of the current along with the increase of-O content in the MXene, so that the Fermi pinning effect between the electrode and the semiconductor can be well reduced by taking the MXene as the electrode, the contact resistance is reduced, and the energy consumption is reduced.
In summary, the present invention discloses a semiconductor device based on an MXene electrode and a method for manufacturing the same, wherein the semiconductor device sequentially includes, from bottom to top: the solar cell comprises a substrate material, an MXene conductive film, a semiconductor layer and a top electrode layer. The MXene material is directly used as an electrode, the three-layer structure of the semiconductor-dielectric layer-electrode in the prior art is changed into the two-layer structure of the semiconductor-electrode, the process is simplified, and the cost is reduced; the used electrode MXene material can change the species and the content of surface groups through simple fine adjustment or processing, and purposefully optimizes and improves the performance of the material, so that the Fermi pinning effect between an electrode and a semiconductor is reduced to the maximum extent; the MXene materials are various in types and various in film forming modes, and the appropriate MXene materials and film forming methods can be selected according to the properties of the semiconductor, so that the damage of the semiconductor in the device preparation process can be reduced to the maximum extent on the basis of ensuring the performance, and the performance of the device is further ensured.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A semiconductor device based on an MXene electrode is characterized by comprising the following components from bottom to top in sequence: the solar cell comprises a substrate material, an MXene conductive film, a semiconductor layer and a top electrode layer.
2. The MXene electrode-based semiconductor device of claim 1, wherein the MXene has a formula Mn+1XnTX(ii) a Wherein M is a transition metal, n is 1, 2 or 3, X is one or two of carbon or nitrogen, TXAre surface groups including-OH, -O and-F.
3. The MXene electrode-based semiconductor device of claim 2, wherein the MXene has an-O content of 5% to 20%.
4. The MXene electrode-based semiconductor device of claim 1, wherein the MXene is Ti3C2TX、Ti2CTX、Ti2CTX、V2CTX，Nb2CTX，Ti3CNTX，Ta4C3TX，Nb4C3TX，(V0.5,Cr0.5)3C2TX，(Ti0.5,Nb0.5)2CTX，Mo2TiC2TX，Mo2CTX，Ti4N3TX，Zr3C2TX，V2NTX，Mo2NTX，Zr3C2TX，Ti2NTXOne or more of (a).
5. The MXene electrode-based semiconductor device of claim 1, wherein the substrate material is glass, SiO2Mica, quartz, polymer film, fabric.
6. The MXene electrode-based semiconductor device of claim 1, wherein the semiconductor layer is one or more of a binary or ternary oxide semiconductor, an inorganic doped semiconductor, an organic small molecule semiconductor, a polymer semiconductor.
7. A method for preparing a semiconductor device based on MXene electrode according to any one of claims 1-6, comprising the steps of:
A. depositing MXene solution on the surface of a substrate material to obtain an MXene conductive film;
B. depositing a semiconductor material on the surface of the MXene conductive film to form a semiconductor layer;
C. and depositing a top electrode material on the surface of the semiconductor layer to obtain the MXene electrode-based semiconductor device.
8. The method for preparing the MXene electrode-based semiconductor device according to claim 7, wherein the MXene solution is prepared by: adding an etching agent into MAX, etching for 1-96 h at 20-80 ℃ to obtain an MXene material, and dissolving the MXene material in a solvent to prepare an MXene solution with the concentration of 2-5 mg/mL.
9. The method of claim 8, wherein the etchant is LiF/HCl, HF, or NH4HF2One or more of; the concentration of the etching agent is 3% -50%.
10. The method for preparing an MXene electrode-based semiconductor device according to claim 9, wherein after the step of adding an etchant into MAX and etching for 1-96 h at 20-80 ℃, the method further comprises:
and placing the MXene material in air with the humidity of 40-70%, and heating to obtain MXene materials with different-O contents.
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