CN108964473A - A kind of high efficiency high voltage power supply translation circuit - Google Patents
A kind of high efficiency high voltage power supply translation circuit Download PDFInfo
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- CN108964473A CN108964473A CN201810893091.4A CN201810893091A CN108964473A CN 108964473 A CN108964473 A CN 108964473A CN 201810893091 A CN201810893091 A CN 201810893091A CN 108964473 A CN108964473 A CN 108964473A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
- H02M7/066—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode particular circuits having a special characteristic
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention relates to the design of radar transmitter high voltage power supply, in particular to a kind of high efficiency high voltage power supply translation circuit.High efficiency high voltage power supply translation circuit includes: two metal-oxide-semiconductors being connected；Two capacitors being connected in series；Two diodes, it is in parallel with two capacitors respectively；Other two diode, as diode-built-in；Other two capacitor, respectively as the output junction capacity of two metal-oxide-semiconductors；Resonant inductance Lr, one end are connect with the source electrode of metal-oxide-semiconductor S1；One end of transformer T, armature winding are connect with resonant inductance Lr, and the other end is connected to the anode of diode D1, and each group of secondary windings connects one group of full bridge rectifier, and all full bridge rectifiers, which are sequentially connected in series, to be followed by loading；Filter capacitor Co is connected in parallel on the both ends of all full bridge rectifier output voltages.High efficiency high voltage power supply translation circuit of the invention, seperated series resonant capacitance Cr1, Cr2 have the capacitance effect of bridge-type current transformer, can also shunt to resonance current, reduce the stress of resonant capacitance.
Description
Technical field
The present invention relates to the design of radar transmitter high voltage power supply, in particular to a kind of high efficiency high voltage power supply translation circuit.
Background technique
With the development of Switching Power Supply, soft switch technique has obtained extensive development and application, has had investigated many height
The circuit topology of efficiency, the predominantly soft switch topology of the soft switch topology of mode of resonance and PWM type.In recent years, with partly leading
The development of body device fabrication techniques, the conducting resistance of switching tube, parasitic capacitance and reverse recovery time are smaller and smaller, this is humorous
The development of vibration converter provides another opportunity.For controlled resonant converter, if being designed to work as, it is able to achieve Sofe Switch change
It changes, so that Switching Power Supply efficiency with higher.
The prior art mainly uses phase-shifting full-bridge PWM translation circuit, which is in parallel at four switching tube both ends
Capacitor or the parasitic capacitance for utilizing switching tube, can be realized the zero voltage turn-off of switching tube.And to realize the no-voltage of switching tube
It is open-minded, it is necessary to there are enough energy to take the charge on the switch junction capacitance or external add-in capacitor that will be opened away, and
The switch junction capacitance or external add-in capacitor charging that will be turned off to same bridge arm.
Disadvantage of the existing technology:
(1) structure is more complex, higher cost；
(2) lagging leg realizes that ZVS is relatively difficult when load reduction, and efficiency is not high enough.
Summary of the invention
The object of the present invention is to provide a kind of high efficiency high voltage power supply translation circuits, to solve existing switching power circuit
At least one existing problem.
The technical scheme is that
A kind of high efficiency high voltage power supply translation circuit, comprising:
The drain electrode of the source electrode connection metal-oxide-semiconductor S2 of metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2, metal-oxide-semiconductor S1, the drain electrode connection of the metal-oxide-semiconductor S1
The anode of DC power supply, the cathode of the source electrode connection DC power supply of metal-oxide-semiconductor S2；
Capacitor Cr1 and capacitor Cr2, the anode of one end connection DC power supply, the other end connect DC power supply after being connected in series
Cathode；
Diode D3 and diode D4, it is in parallel with the capacitor Cr1 and capacitor Cr2 respectively；
Diode D1 and diode D2, respectively as the diode-built-in of the metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2；
Capacitor C1 and capacitor C2, respectively as the output junction capacity of the metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2；
Resonant inductance Lr, one end are connect with the source electrode of metal-oxide-semiconductor S1；
Transformer T, including one group of armature winding and multiple groups secondary windings, one end of the armature winding of transformer T with it is described
The connection of the resonant inductance Lr other end, the other end of the armature winding of the transformer T are connected to the anode of diode D1, and each group
The secondary windings connects one group of full bridge rectifier, and all full bridge rectifiers, which are sequentially connected in series, to be followed by loading；
Filter capacitor Co is connected in parallel on the both ends of all full bridge rectifier output voltages.
Optionally, each group of full bridge rectifier includes 4 rectifier diodes, and 4 rectifier diodes are connected two-by-two
It is in parallel again afterwards；
Described secondary windings one end is connected between two series rectifier diodes, and the secondary windings other end is connected to
Between other two series rectifier diode；
In first group and last group of full bridge rectifier, one end and load after parallel connection are connected, and the other end is in
Between the series connection of other groups of full bridge rectifiers, and other groups of full bridge rectifiers of the centre are sequentially connected in series.
Optionally, the diode D3 and diode D4 is fast recovery diode.
Invention effect:
At least there is following advantage in high efficiency high voltage power supply translation circuit of the invention:
(1) side not only has the capacitance effect of bridge-type current transformer using seperated series resonant capacitance Cr1, Cr2, and
And resonance current can also be shunted, reduce the stress of resonant capacitance；
(2) series resonance inductor Lr and magnetizing inductance Lm can be replaced by the parasitic parameter of transformer T, be conducive to realize magnetic collection
At design, entire current transformer may be designed as only needing a magnetic core, reduce design cost；
(3) it can realize that the ZVS of primary metal-oxide-semiconductor is cut-off in gamut, the ZCS shutdown of secondary commutation diode reduces
Switching loss improves efficiency.
Detailed description of the invention
Fig. 1 is the circuit diagram of high efficiency high voltage power supply translation circuit of the present invention；
Fig. 2 is the circuit diagram of transformer T left half in the circuit diagram of high efficiency high voltage power supply translation circuit of the present invention；
Fig. 3 is the circuit diagram of transformer T right half in the circuit diagram of high efficiency high voltage power supply translation circuit of the present invention；
Fig. 4 is the working waveform figure of high efficiency high voltage power supply translation circuit of the present invention.
Specific embodiment
To keep the purposes, technical schemes and advantages of the invention implemented clearer, below in conjunction in the embodiment of the present invention
Attached drawing, technical solution in the embodiment of the present invention is further described in more detail.In the accompanying drawings, identical from beginning to end or class
As label indicate same or similar element or element with the same or similar functions.Described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.The embodiments described below with reference to the accompanying drawings are exemplary, it is intended to use
It is of the invention in explaining, and be not considered as limiting the invention.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.Under
Face is described in detail the embodiment of the present invention in conjunction with attached drawing.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "front", "rear",
The orientation or positional relationship of the instructions such as "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is based on attached drawing institute
The orientation or positional relationship shown, is merely for convenience of description of the present invention and simplification of the description, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as protecting the present invention
The limitation of range.
1 to Fig. 4 high efficiency high voltage power supply translation circuit of the invention is described in further details with reference to the accompanying drawing.
The present invention provides a kind of high efficiency high voltage power supply translation circuit, including metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2, capacitor Cr1,
Capacitor Cr2, diode D3, diode D4, diode D1, diode D2, capacitor C1, capacitor C2, resonant inductance Lr, transformer T
And filter capacitor Co.
Specifically, the drain electrode of the source electrode connection metal-oxide-semiconductor S2 of metal-oxide-semiconductor S1, the drain electrode connection DC power supply of metal-oxide-semiconductor S1 is just
Pole, the cathode of the source electrode connection DC power supply of metal-oxide-semiconductor S2.
One end connects the anode of DC power supply after capacitor Cr1 is connected in series with capacitor Cr2, and the other end connects the negative of DC power supply
Pole.
Diode D3 and diode D4 is in parallel with capacitor Cr1 and capacitor Cr2 respectively.In the present embodiment, preferably diode D3
It is fast recovery diode with diode D4.
Diode-built-in of the diode D1 and diode D2 respectively as metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2.Capacitor C1 and capacitor C2
Respectively as the output junction capacity of metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2.
The one end resonant inductance Lr is connect with the source electrode of metal-oxide-semiconductor S1, and transformer T (including transformer magnetizing inductance Lm) includes one
Group armature winding and multiple groups secondary windings, one end of the armature winding of transformer T are connect with the resonant inductance Lr other end, transformer
The other end of the armature winding of T is connected to the anode of diode D1, and each group of secondary windings connects one group of full bridge rectifier, institute
There is full bridge rectifier to be sequentially connected in series to be followed by loading.
Filter capacitor Co is connected in parallel on the both ends of all full bridge rectifier output voltages
In high efficiency high voltage power supply translation circuit of the invention, resonant inductance Lr, capacitor Cr1, capacitor Cr2, transformer swash
Magnetoelectricity sense Lm, which forms resonant groove path, makes circuit work in inductive resonance state, and the effect of diode D1, D2 are filled in resonant capacitance
The freewheeling path of resonant capacitance is provided after electric discharge, resonance potential is reduced, to reduce the voltage stress of metal-oxide-semiconductor.Transformer T's
Effect is to provide boosting, and overlapped in series forms high pressure after secondary multiple windings are rectified.
Further, in high efficiency high voltage power supply translation circuit of the invention, each group of full bridge rectifier includes 4 rectifications
Diode, 4 rectifier diodes are in parallel again after connecting two-by-two；Secondary windings one end be connected to two series rectifier diodes it
Between, the secondary windings other end is connected between other two series rectifier diode.
In first group and last group of full bridge rectifier, one end and load after parallel connection are connected, and the other end is in
Between the series connection of other groups of full bridge rectifiers, and other groups of intermediate full bridge rectifiers are sequentially connected in series.
Shown in Figure 4, high efficiency high voltage power supply translation circuit working principle of the invention and working method are as follows:
(1) stage 1:t0~t1.
It after S2 shutdown, is negative by the electric current ir of resonant inductance Lr, electric current discharges to the output parasitic capacitance C1 of S1, right
The parasitic capacitance of S2 charges, and until the body diode that Vds1 is 0, S1 will be connected, at this moment S1 will have ZVS Sofe Switch condition, can
To open S1.Resonance current Ir starts to be gradually increasing with sinusoidal form, and the electric current Ip in magnetizing inductance is linearly increasing.Ir and ip
Difference portion electric current inflow transformer is coupled to secondary to force secondary side diode D1 conducting, output voltage is by transformer
Clamper, i.e. voltage on Lm are clamped, therefore the resonance of primary side is occurred between Lr and Cr1, Cr2.At this moment resonance current Ir
It discharges to resonant capacitance Cr1, charges to Cr2, resonance current is evenly through two resonant capacitances, therefore their value is resonance electricity
Hold the half of Ir.
(2) stage 2:t1~t2.
The stage starts from resonant inductance electric current Ir and is become just by negative, since switching tube S1 has driven conducting before this,
Therefore resonance current flows through MOSFET pipe S1.
(3) stage 3:t2~t3.
At this moment resonant capacitance charge and discharge are completed, and capacitance current drops to 0, and resonance current, which will flow through diode D1, to be continued to continue
Stream.
(4) stage 4:t3~t4.
It is equal at both t2 moment with the decline of primary side resonance current and the rising of exciting current, at this moment flow into transformation
Device is coupled to secondary electric current and drops to zero.At this point, secondary side diode DR1 will be turned off because of current over-zero and naturally, it is several
The not process of Reverse recovery realizes the ZCS shutdown of secondary diode.Simultaneously as output voltage is no longer clamped by transformer
Position, then Lm just becomes free resonant inductance, Lm and Lr are added together and Cr1, Cr2 resonance.
(5) stage 5:t4~t5.
At the t3 moment, S1 shutdown, then under the action of transformer magnetizing inductance Lm, parasitic capacitance of the primary current to S2
Electric discharge charges to the parasitic capacitance of S1.Until S2 parasitic capacitor voltage is put into zero, the parasitic diode conducting of S2 later, thus
It is created condition for the ZVS of S2, voltage is input voltage vin on S1 at this time.Subsequent 4 working stages of lower half period and
4 stages above are similar, are not described in detail.
Substantially from it, LLC circuit is actually the series resonance there are two resonance point, two of them resonance point
Frequency are as follows:
For resonance circuit, to make it that perceptual state be presented, it is necessary to the frequency of extrinsic motivated be made to be higher than resonance frequency.
Therefore for LLC, its working condition is divided into fs<f2, fs>f1, f2<fs<tri- kinds of f1 working condition.In fr2 < fs < fr1 state
Under, converter works in complex resonance state, and metal-oxide-semiconductor no-voltage can be made to cut-off (ZVS), and make rectifier diode zero-current switching
(ZCS), converter whole efficiency can be made to be improved.
Application method:
Mainly transmitter HVPS translation circuit is improved, the original full bridge phase shift PWM circuit of transformer primary side
Structure is changed to full-bridge LLC resonance PFM circuit structure, and transformer secondary reaches high pressure using Multiple coil boosting mode.
In conclusion at least there is following advantage in high efficiency high voltage power supply translation circuit of the invention:
(1) primary side not only has bridge-type current transformer capacitance effect using fission series resonant capacitance Cr1, Cr2, and
And resonance current can also be shunted, reduce the stress of resonant capacitance；
(2) series resonance inductor Lr and magnetizing inductance Lm can be replaced by the parasitic parameter of transformer T, be conducive to realize magnetic collection
At design, entire current transformer may be designed as only needing a magnetic core, reduce design cost；
(3) it can realize that the ZVS of primary metal-oxide-semiconductor is cut-off in gamut, the ZCS shutdown of secondary commutation diode reduces
Switching loss improves efficiency.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of protection of the claims
It is quasi-.
Claims (3)
1. a kind of high efficiency high voltage power supply translation circuit characterized by comprising
The drain electrode of the source electrode connection metal-oxide-semiconductor S2 of metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2, metal-oxide-semiconductor S1, the drain electrode of the metal-oxide-semiconductor S1 connect direct current
The anode of power supply, the cathode of the source electrode connection DC power supply of metal-oxide-semiconductor S2；
Capacitor Cr1 and capacitor Cr2, the anode of one end connection DC power supply, the other end connect the cathode of DC power supply after being connected in series；
Diode D3 and diode D4, it is in parallel with the capacitor Cr1 and capacitor Cr2 respectively；
Diode D1 and diode D2, respectively as the diode-built-in of the metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2；
Capacitor C1 and capacitor C2, respectively as the output junction capacity of the metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2；
Resonant inductance Lr, one end are connect with the source electrode of metal-oxide-semiconductor S1；
Transformer T, including one group of armature winding and multiple groups secondary windings, one end of the armature winding of transformer T and the resonance
The connection of the inductance Lr other end, the other end of the armature winding of the transformer T is connected to the anode of diode D1, described in each group
Secondary windings connects one group of full bridge rectifier, and all full bridge rectifiers, which are sequentially connected in series, to be followed by loading；
Filter capacitor Co is connected in parallel on the both ends of all full bridge rectifier output voltages.
2. high efficiency high voltage power supply translation circuit according to claim 1, which is characterized in that each group of full-bridge rectification
Circuit includes 4 rectifier diodes, and 4 rectifier diodes are in parallel again after connecting two-by-two；
Described secondary windings one end is connected between two series rectifier diodes, in addition the secondary windings other end is connected to
Between two series rectifier diodes；
At first group in last group of full bridge rectifier, one end and load after parallel connection are connected, the other end and centre
Other groups of full bridge rectifier series connection, and other groups of full bridge rectifiers of the centre are sequentially connected in series.
3. high efficiency high voltage power supply translation circuit according to claim 1, which is characterized in that the diode D3 and two poles
Pipe D4 is fast recovery diode.
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| CN201810893091.4A CN108964473A (en) | 2018-08-07 | 2018-08-07 | A kind of high efficiency high voltage power supply translation circuit |
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| CN201810893091.4A CN108964473A (en) | 2018-08-07 | 2018-08-07 | A kind of high efficiency high voltage power supply translation circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752756A (en) * | 2019-10-28 | 2020-02-04 | 北方工业大学 | High-gain conversion circuit and control method thereof |
| CN110855154A (en) * | 2019-11-29 | 2020-02-28 | 清华大学 | Single-phase half-bridge modular multilevel isolated DC transformer |
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| CN104485822A (en) * | 2014-12-09 | 2015-04-01 | 中国电子科技集团公司第三十八研究所 | Serially connected electricity supply power supply for multi-stage depressed collector traveling wave tube |
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| CN106533183A (en) * | 2016-12-23 | 2017-03-22 | 天津大学 | Efficient isolation type DC full-bridge conversion circuit |
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| JPH09312974A (en) * | 1996-05-21 | 1997-12-02 | Meidensha Corp | Capacitor charger |
| US20040196679A1 (en) * | 2003-04-03 | 2004-10-07 | Ingvar Apeland | Phase-shifted resonant converter having reduced output ripple |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110855154A (en) * | 2019-11-29 | 2020-02-28 | 清华大学 | Single-phase half-bridge modular multilevel isolated DC transformer |
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