CN108631639A - Two-way DC-AC translation circuits for energy storage inverter - Google Patents
Two-way DC-AC translation circuits for energy storage inverter Download PDFInfo
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- CN108631639A CN108631639A CN201710158577.9A CN201710158577A CN108631639A CN 108631639 A CN108631639 A CN 108631639A CN 201710158577 A CN201710158577 A CN 201710158577A CN 108631639 A CN108631639 A CN 108631639A
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- mos pipe
- power mos
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- grid
- igbt pipes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/66—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal
- H02M7/68—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters
- H02M7/72—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/79—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/797—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/3353—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
- H02M1/007—Plural converter units in cascade
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention belongs to the technical fields of bidirectional energy-storage inverter, and in particular to a kind of two-way DC AC translation circuits for energy storage inverter；The technical issues of solution is：There is provided a kind of simple in structure, efficiency is higher, can reach photovoltaic generation and generate power for their own use the two-way DC AC translation circuits for energy storage inverter of purpose；The technical solution used for：For the two-way DC AC translation circuits of energy storage inverter, including：DC direct currents input/output module, primary side bridge circuit, voltage changing module, secondary side bridge circuit, Bidirectional up-down die block, inversion bridge circuit, inversion inductor freewheeling circuit, LLC filter circuits exchange input/output module with AC；The present invention is suitable for field of power electronics.
Description
Technical field
The invention belongs to the technical fields of bidirectional energy-storage inverter, and in particular to a kind of for the two-way of energy storage inverter
DC-AC translation circuits.
Background technology
Common photovoltaic combining inverter is typically to concentrate daytime to generate electricity by way of merging two or more grid systems and night does not have energy offer, cannot be played
The effect that peak clipping Pinggu adjusts power grid and generates power for their own use.In recent years, gradually increasing with photovoltaic generating system, in power grid
The ratio occupied in system is higher and higher, therefore there is an urgent need to a kind of bidirectional energy-storage inverters to play peak clipping Pinggu adjusting electricity
The purpose that net, photovoltaic generation are generated power for their own use.
In the prior art, usually come in the power grid end of a photovoltaic combining inverter accumulator cell charging and discharging equipment in parallel
Realize the purpose for adjusting power grid and generating power for their own use.But there are various problems for such scheme, need in photovoltaic combining inverter
On the basis of additionally increase an accumulator cell charging and discharging equipment, with plurality of devices build a bidirectional energy-storage system, not only make in this way
It is big to obtain the of high cost of whole device, volume, but also there are problems that control complexity, inefficiency.
Invention content
The present invention overcomes the shortcomings of the prior art, technical problem to be solved to be：A kind of simple in structure, effect is provided
Rate is higher, can reach photovoltaic generation and generate power for their own use the two-way DC-AC translation circuits for energy storage inverter of purpose.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：Two-way DC-AC for energy storage inverter
Translation circuit, including：DC direct currents input/output module, primary side bridge circuit, voltage changing module, secondary side bridge circuit, Bidirectional up-down
Die block, inversion bridge circuit, inversion inductor freewheeling circuit, LLC filter circuits exchange input/output module with AC, and the DC is straight
Stream input/output module is bi-directionally connected with the primary side bridge circuit, the primary side bridge circuit and the two-way company of the voltage changing module
It connects, the voltage changing module is bi-directionally connected with the secondary side bridge circuit, the pair side bridge circuit and the Bidirectional up-down pressing mold
Block is bi-directionally connected, and the Bidirectional up-down die block is bi-directionally connected with the inversion bridge circuit, the inversion bridge circuit and institute
It states inversion inductor freewheeling circuit to be bi-directionally connected, the inversion inductor freewheeling circuit is bi-directionally connected with the LLC filter circuits, described
LLC filter circuits exchange input/output module with the AC and are bi-directionally connected.
Preferably, the DC direct currents input/output module includes：Battery E1, the primary side bridge circuit include：First work(
Rate metal-oxide-semiconductor Q1, the second power MOS pipe Q2, third power MOS pipe Q3 and the 4th power MOS pipe Q4, the voltage changing module include：
Transformer T1 and capacitance C1, pair side bridge circuit include：5th power MOS pipe Q5, the 6th power MOS pipe Q6, the 7th work(
Rate metal-oxide-semiconductor Q7 and the 8th power MOS pipe Q8, the Bidirectional up-down die block include：Capacitance C2, power inductance L1, the 9th power
Metal-oxide-semiconductor Q9, the tenth power MOS pipe Q10 and capacitance C3, the inversion bridge circuit include：First IGBT pipes M1, the 2nd IGBT are managed
M2, the 3rd IGBT pipes M3 and the 4th IGBT pipe M4, the inversion inductor freewheeling circuit include：Diode D1, diode D2, the 5th
IGBT pipes M5 and the 6th IGBT pipe M6, the LLC filter circuits include：Power inductance L2, power inductance L3 and capacitance C4；It is described
The anode of battery E1 is connected with the drain electrode of the first power MOS pipe Q1 and the drain electrode of the second power MOS pipe Q2 respectively, institute
The cathode for stating battery E1 is connected with the source electrode of the source electrode of the third power MOS pipe Q3 and the 4th power MOS pipe Q4 respectively,
Primary side one end of the transformer T1 respectively with the source electrode of the second power MOS pipe Q2 and the 4th power MOS pipe Q4
Drain electrode is connected, the primary side other end of the transformer T1 respectively with the source electrode of the first power MOS pipe Q1 and the third work(
The drain electrode of rate metal-oxide-semiconductor Q3 is connected；Secondary side one end of the transformer T1 is connected with one end of the capacitance C1, the capacitance C1's
The other end is connected with the drain electrode of the source electrode and the 8th power MOS pipe Q8 of the 6th power MOS pipe Q6 respectively, the transformation
The secondary side other end of the device T1 drain electrode phase with the source electrode and the 7th power MOS pipe Q7 of the 5th power MOS pipe Q5 respectively
Even；One end of the capacitance C2 respectively with the draining of the 5th power MOS pipe Q5, the drain electrode of the 6th power MOS pipe Q6
Be connected with one end of the power inductance L1, the other end of the capacitance C2 respectively with the source electrode of the 7th power MOS pipe Q7,
The source electrode of the 8th power MOS pipe Q8, the source electrode of the 9th power MOS pipe Q9, one end of capacitance C3, the 3rd IGBT pipes M3
Source electrode be connected with the source electrode of the 4th IGBT pipes M4, the other end of the power inductance L1 respectively with the 9th power
The drain electrode of metal-oxide-semiconductor Q9 is connected with the source electrode of the tenth power MOS pipe Q10, the drain electrode difference of the tenth power MOS pipe Q10
It is connected with the other end of the capacitance C3, the drain electrode of the first IGBT pipes M1 and the drain electrode of the 2nd IGBT pipes M2；It is described
The source electrode of first IGBT pipes M1 respectively with the draining of the 3rd IGBT pipes M3, the anode of the diode D1, the diode
The cathode of D2 is connected with one end of the power inductance L2, and the source electrode of the 2nd IGBT pipes M2 is managed with the 4th IGBT respectively
The draining of M4, one end of the drain electrode and the power inductance L3 of the source electrode of the 5th IGBT pipes M5, the 6th IGBT pipes M6
It is connected, the cathode of the diode D1 is connected with the drain electrode of the 5th IGBT pipes M5, the anode of the diode D2 and institute
The source electrode for stating the 6th IGBT pipes M6 is connected；The other end of the power inductance L2 respectively with one end of the capacitance C4 and the AC
Input/output module 109 is exchanged to be connected, the other end of the power inductance L3 respectively with the other end of the capacitance C4 and described
AC exchanges input/output module and is connected；The grid of the first power MOS pipe Q1, the grid of the second power MOS pipe Q2, institute
State the grid of third power MOS pipe Q3, the grid of the 4th power MOS pipe Q4, the 5th power MOS pipe Q5 grid,
The grid of the grid of the 6th power MOS pipe Q6, the grid of the 7th power MOS pipe Q7, the 8th power MOS pipe Q8
Pole, the grid of the 9th power MOS pipe Q9, the grid of the tenth power MOS pipe Q10, the first IGBT pipes M1 grid
Pole, the grid of the 2nd IGBT pipes M2, the grid of the 3rd IGBT pipes M3, the 4th IGBT pipes M4 grid, described
The grid of the grid of 5th IGBT pipes M5 and the 6th IGBT pipes M6, is connected with driving circuit.
Preferably, the first power MOS pipe Q1, the second power MOS pipe Q2, the third power MOS pipe Q3, institute
State the 4th power MOS pipe Q4, the 5th power MOS pipe Q5, the 6th power MOS pipe Q6, the 7th power MOS pipe
Q7, the 8th power MOS pipe Q8, the 9th power MOS pipe Q9, the tenth power MOS pipe Q10 are N-channel enhancing
Type metal-oxide-semiconductor.
Preferably, the model HX1584-11029A of the transformer T1.
Preferably, the AC exchanges input/output module is load, or is the ends power grid AC.
The present invention has the advantages that compared with prior art：
In the present invention, when battery E1 discharges, primary side bridge circuit uses the duty ratio of fixed frequency 50%, secondary side bridge-type
Circuit is failure to actuate, and the metal-oxide-semiconductor for walking secondary side bridge circuit makees full-bridge rectification, boosts to n times of cell voltage, Bidirectional up-down die block
In the 9th power MOS pipe Q9 do PWM controls, the tenth power MOS pipe Q10 is failure to actuate so that Bidirectional up-down die block can reach
To required BUS voltages, inversion bridge circuit and inversion inductor freewheeling circuit are modulated using SPWM so that are exported in exchange side
The sine wave of required frequency and amplitude；When battery E1 charges, secondary side bridge circuit uses the duty ratio of fixed frequency 50%, former
Side bridge circuit does synchronous rectification, and the tenth power MOS pipe Q10 does PWM controls, and the 9th power MOS pipe Q9 is failure to actuate, and makes two-way liter
Voltage reduction module can reach the required charging voltages of battery E1, and inversion bridge circuit and inversion inductor freewheeling circuit use SPWM
Modulation so that in the required frequency of exchange side synchronised grids input and the sine wave of amplitude；In single circuit loop, energy can
With two-way flow, to which a circuit can realize the charging and discharging of battery, without other charging circuit, thus
Reduce the component in entire topological circuit, increase the reliability of system, reduce small product size, reduce product at
This.
Description of the drawings
The present invention will be further described in detail below in conjunction with the accompanying drawings；
Fig. 1 is the circuit structure for the two-way DC-AC translation circuits for energy storage inverter that the embodiment of the present invention one provides
Schematic diagram；
Fig. 2 is the circuit theory of the two-way DC-AC translation circuits provided by Embodiment 2 of the present invention for energy storage inverter
Figure；
In figure：101 be DC direct current input/output modules, and 102 be primary side bridge circuit, and 103 be voltage changing module, and 104 be pair
Side bridge circuit, 105 be Bidirectional up-down die block, and 106 be inversion bridge circuit, and 107 be inversion inductor freewheeling circuit, and 108 are
LLC filter circuits, 109 exchange input/output module for AC.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments；Based on the embodiments of the present invention, ordinary skill people
The every other embodiment that member is obtained without creative efforts, shall fall within the protection scope of the present invention.
Fig. 1 is the circuit structure for the two-way DC-AC translation circuits for energy storage inverter that the embodiment of the present invention one provides
Schematic diagram, as shown in Figure 1, the two-way DC-AC translation circuits for energy storage inverter, including：DC direct current input/output modules
101, primary side bridge circuit 102, voltage changing module 103, secondary side bridge circuit 104, Bidirectional up-down die block 105, inversion bridge-type electricity
Road 106, inversion inductor freewheeling circuit 107, LLC filter circuits 108 exchange input/output module 109 with AC, and the DC direct currents are defeated
Enter output module 101 to be bi-directionally connected with the primary side bridge circuit 102, the primary side bridge circuit 102 and the voltage changing module
103 are bi-directionally connected, and the voltage changing module 103 is bi-directionally connected with the secondary side bridge circuit 104, pair side bridge circuit 104
It is bi-directionally connected with the Bidirectional up-down die block 105, the Bidirectional up-down die block 105 and the inversion bridge circuit 106 pairs
To connection, the inversion bridge circuit 106 is bi-directionally connected with the inversion inductor freewheeling circuit 107, the inversion inductor afterflow
Circuit 107 is bi-directionally connected with the LLC filter circuits 108, and the LLC filter circuits 108 exchange input and output mould with the AC
Block 109 is bi-directionally connected.
This two-way DC-AC translation circuits control is simple, can fast and efficiently realize energy in bidirectional flow, and then realize
The charge and discharge of battery.
Fig. 2 is the circuit theory of the two-way DC-AC translation circuits provided by Embodiment 2 of the present invention for energy storage inverter
Figure, as shown in Fig. 2, on the basis of embodiment one, the DC direct currents input/output module 101 may include：Battery E1, the original
Side bridge circuit 102 may include：First power MOS pipe Q1, the second power MOS pipe Q2, third power MOS pipe Q3 and the 4th power
Metal-oxide-semiconductor Q4, the voltage changing module 103 may include：Transformer T1 and capacitance C1, pair side bridge circuit 104 may include：5th
Power MOS pipe Q5, the 6th power MOS pipe Q6, the 7th power MOS pipe Q7 and the 8th power MOS pipe Q8, the Bidirectional up-down pressing mold
Block 105 may include：Capacitance C2, power inductance L1, the 9th power MOS pipe Q9, the tenth power MOS pipe Q10 and capacitance C3, it is described inverse
Become bridge circuit 106 may include：First IGBT pipes M1, the 2nd IGBT pipes M2, the 3rd IGBT pipes M3 and the 4th IGBT pipe M4, it is described
Inversion inductor freewheeling circuit 107 may include：Diode D1, diode D2, the 5th IGBT pipes M5 and the 6th IGBT pipe M6, it is described
LLC filter circuits 108 may include：Power inductance L2, power inductance L3 and capacitance C4.
The battery E1 anode respectively with the drain electrode of the first power MOS pipe Q1 and the second power MOS pipe Q2
Drain electrode be connected, the cathode of the battery E1 respectively with the source electrode of the third power MOS pipe Q3 and the 4th power MOS pipe
The source electrode of Q4 is connected, primary side one end of transformer T1 source electrode and the described 4th with the second power MOS pipe Q2 respectively
The drain electrode of power MOS pipe Q4 is connected, the primary side other end of the transformer T1 source electrode with the first power MOS pipe Q1 respectively
It is connected with the drain electrode of the third power MOS pipe Q3；Secondary side one end of the transformer T1 is connected with one end of the capacitance C1,
The drain electrode with the source electrode and the 8th power MOS pipe Q8 of the 6th power MOS pipe Q6 respectively of the other end of the capacitance C1
Be connected, the secondary side other end of the transformer T1 respectively with the source electrode of the 5th power MOS pipe Q5 and the 7th power MOS
The drain electrode of pipe Q7 is connected；One end of the capacitance C2 respectively with the draining of the 5th power MOS pipe Q5, the 6th power
The drain electrode of metal-oxide-semiconductor Q6 is connected with one end of the power inductance L1, the other end of the capacitance C2 respectively with the 7th power
The source electrode of metal-oxide-semiconductor Q7, the source electrode of the 8th power MOS pipe Q8, the source electrode of the 9th power MOS pipe Q9, one end of capacitance C3, institute
The source electrode for stating the 3rd IGBT pipes M3 is connected with the source electrode of the 4th IGBT pipes M4, the other end of the power inductance L1 respectively with
The drain electrode of the 9th power MOS pipe Q9 is connected with the source electrode of the tenth power MOS pipe Q10, the tenth power MOS pipe
Q10 drain electrode respectively with the other end of the capacitance C3, the drain electrode of the first IGBT pipes M1 and the 2nd IGBT pipes M2
Drain electrode is connected；The source electrode of the first IGBT pipes M1 respectively with the draining of the 3rd IGBT pipes M3, the sun of the diode D1
Pole, the diode D2 cathode be connected with one end of the power inductance L2, the source electrode of the 2nd IGBT pipes M2 respectively with
The draining of the 4th IGBT pipes M4, the drain electrode of the source electrode of the 5th IGBT pipes M5, the 6th IGBT pipes M6 and the work(
One end of rate inductance L3 is connected, and the cathode of the diode D1 is connected with the drain electrode of the 5th IGBT pipes M5, the diode
The anode of D2 is connected with the source electrode of the 6th IGBT pipes M6；The other end of the power inductance L2 respectively with the capacitance C4
One end exchange input/output module 109 with the AC and be connected, the other end of the power inductance L3 respectively with the capacitance C4
The other end exchanged with the AC input/output module 109 be connected；Grid, second work(of the first power MOS pipe Q1
The grid of rate metal-oxide-semiconductor Q2, the grid of the third power MOS pipe Q3, the grid of the 4th power MOS pipe Q4, the described 5th
The grid of power MOS pipe Q5, the grid of the 6th power MOS pipe Q6, the grid of the 7th power MOS pipe Q7, described
The grid, described of the grid of eight power MOS pipe Q8, the grid of the 9th power MOS pipe Q9, the tenth power MOS pipe Q10
Grid, the 4th IGBT of the grid of first IGBT pipes M1, the grid of the 2nd IGBT pipes M2, the 3rd IGBT pipes M3
The grid of pipe M4, the 5th IGBT pipes M5 grid and the 6th IGBT pipes M6 grid, be connected with driving circuit.
Specifically, the first power MOS pipe Q1, the second power MOS pipe Q2, the third power MOS pipe Q3, institute
State the 4th power MOS pipe Q4, the 5th power MOS pipe Q5, the 6th power MOS pipe Q6, the 7th power MOS pipe
Q7, the 8th power MOS pipe Q8, the 9th power MOS pipe Q9, the tenth power MOS pipe Q10 can be that N-channel increases
Strong type metal-oxide-semiconductor.
Specifically, the model of the transformer T1 can be HX1584-11029A.
Specifically, the AC exchanges input/output module 109 can be load, or be the ends power grid AC.
When battery E1 discharges, primary side bridge circuit 102 is using the duty ratio of fixed frequency 50%, secondary side bridge circuit
104 are failure to actuate, and the metal-oxide-semiconductor for walking secondary side bridge circuit 104 makees full-bridge rectification, boost to n times of battery E1 voltages, Bidirectional up-down pressure
The 9th power MOS pipe Q9 in module 105 does PWM controls, and the tenth power MOS pipe Q10 is failure to actuate so that Bidirectional up-down die block
105 can reach required BUS voltages, inversion bridge circuit 106 and inversion inductor freewheeling circuit 107 is modulated using SPWM,
So that the sine wave of frequency and amplitude needed for being exported in exchange side；When battery E1 charges, secondary side bridge circuit 104 is using fixation
The duty ratio of frequency 50%, primary side bridge circuit 102 do synchronous rectification, and the tenth power MOS pipe Q10 does PWM controls, the 9th power
Metal-oxide-semiconductor Q9 is failure to actuate, and Bidirectional up-down die block 105 is enable to reach the required charging voltages of battery E1, inversion bridge circuit
The 106 and use of inversion inductor freewheeling circuit 107 SPWM is modulated so that in the required frequency and amplitude of the input of exchange side synchronised grids
Sine wave.
For the present invention, in single circuit loop, energy can be with two-way flow, to which a circuit can realize
The charging and discharging of battery are increased without other charging circuit to reduce the component in entire topological circuit
The reliability of system, reduces small product size, reduces the cost of product.Battery E1 and PV, AC are isolated by transformer T1, peace
It is complete reliable.In the entire system, two-stage DC/DC and level-one DC-AC energy can two-way flow, to battery charging and put
Electricity reduces the device of half, reduces modulation device and rectifying device in entire topological circuit, reduces power device and exist
It is lost in entire circuit, improves the utilization rate of battery and the efficiency of whole system；Two-stage DC/DC and level-one DC-AC control letters
It is single, to reduce the operand of system, keep system more reliable；Two-way isolation circuit makes battery completely and other isolation, and energy
It enough realizes Sofe Switch, to reduce system loss, improves system effectiveness.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (5)
1. the two-way DC-AC translation circuits for energy storage inverter, it is characterised in that：Including：DC direct current input/output modules
(101), primary side bridge circuit (102), voltage changing module (103), secondary side bridge circuit (104), Bidirectional up-down die block (105),
Inversion bridge circuit (106), inversion inductor freewheeling circuit (107), LLC filter circuits (108) exchange input/output module with AC
(109), the DC direct currents input/output module (101) is bi-directionally connected with the primary side bridge circuit (102), the primary side bridge-type
Circuit (102) is bi-directionally connected with the voltage changing module (103), the voltage changing module (103) and the secondary side bridge circuit (104)
It is bi-directionally connected, the pair side bridge circuit (104) is bi-directionally connected with the Bidirectional up-down die block (105), the Bidirectional up-down
Die block (105) is bi-directionally connected with the inversion bridge circuit (106), the inversion bridge circuit (106) and inversion electricity
Sense freewheeling circuit (107) is bi-directionally connected, the inversion inductor freewheeling circuit (107) and the two-way company of the LLC filter circuits (108)
It connects, the LLC filter circuits (108) exchange input/output module (109) with the AC and are bi-directionally connected.
2. the two-way DC-AC translation circuits according to claim 1 for energy storage inverter, it is characterised in that：The DC
Direct current input/output module (101) includes：Battery E1, the primary side bridge circuit (102) include：First power MOS pipe Q1,
Two power MOS pipe Q2, third power MOS pipe Q3 and the 4th power MOS pipe Q4, the voltage changing module (103) include：Transformer T1
With capacitance C1, the pair side bridge circuit (104) includes：5th power MOS pipe Q5, the 6th power MOS pipe Q6, the 7th power
Metal-oxide-semiconductor Q7 and the 8th power MOS pipe Q8, the Bidirectional up-down die block (105) include：Capacitance C2, power inductance L1, the 9th work(
Rate metal-oxide-semiconductor Q9, the tenth power MOS pipe Q10 and capacitance C3, the inversion bridge circuit (106) include：First IGBT pipes M1,
Two IGBT pipes M2, the 3rd IGBT pipes M3 and the 4th IGBT pipe M4, the inversion inductor freewheeling circuit (107) include：Diode D1,
Diode D2, the 5th IGBT pipes M5 and the 6th IGBT pipe M6, the LLC filter circuits (108) include：Power inductance L2, power
Inductance L3 and capacitance C4；
The battery E1 anode respectively with the first power MOS pipe Q1 drain electrode and the second power MOS pipe Q2 leakage
Extremely be connected, the cathode of the battery E1 respectively with the source electrode of the third power MOS pipe Q3 and the 4th power MOS pipe Q4
Source electrode is connected, primary side one end of the transformer T1 respectively with the source electrode of the second power MOS pipe Q2 and the 4th power
The drain electrode of metal-oxide-semiconductor Q4 is connected, the primary side other end of the transformer T1 respectively with the source electrode of the first power MOS pipe Q1 and institute
The drain electrode for stating third power MOS pipe Q3 is connected；Secondary side one end of the transformer T1 is connected with one end of the capacitance C1, described
The other end of capacitance C1 is connected with the drain electrode of the source electrode and the 8th power MOS pipe Q8 of the 6th power MOS pipe Q6 respectively,
The secondary side other end of the transformer T1 respectively with the source electrode of the 5th power MOS pipe Q5 and the 7th power MOS pipe Q7
Drain electrode be connected；One end of the capacitance C2 respectively with the draining of the 5th power MOS pipe Q5, the 6th power MOS pipe
The drain electrode of Q6 is connected with one end of the power inductance L1, the other end of the capacitance C2 respectively with the 7th power MOS pipe
The source electrode of Q7, the source electrode of the 8th power MOS pipe Q8, the source electrode of the 9th power MOS pipe Q9, one end of capacitance C3, described
The source electrode of three IGBT pipes M3 is connected with the source electrode of the 4th IGBT pipes M4, the other end of the power inductance L1 respectively with it is described
The drain electrode of 9th power MOS pipe Q9 is connected with the source electrode of the tenth power MOS pipe Q10, the tenth power MOS pipe Q10's
Drain the drain electrode phase with the drain electrode and the 2nd IGBT pipes M2 of the other end of the capacitance C3, the first IGBT pipes M1 respectively
Even；The source electrode of the first IGBT pipes M1 respectively with the draining of the 3rd IGBT pipes M3, anode of the diode D1, described
The cathode of diode D2 is connected with one end of the power inductance L2, and the source electrode of the 2nd IGBT pipes M2 is respectively with the described 4th
The draining of IGBT pipes M4, the drain electrode of the source electrode of the 5th IGBT pipes M5, the 6th IGBT pipes M6 and the power inductance L3
One end be connected, the cathode of the diode D1 is connected with the drain electrode of the 5th IGBT pipes M5, the sun of the diode D2
Pole is connected with the source electrode of the 6th IGBT pipes M6；The other end of the power inductance L2 respectively with one end of the capacitance C4 and
The AC exchange input/output modules (109) are connected, and the other end of the power inductance L3 is another with the capacitance C4 respectively
End exchanges input/output module (109) with the AC and is connected；The grid of the first power MOS pipe Q1, the second power MOS
Grid, the 5th power of the grid of pipe Q2, the grid of the third power MOS pipe Q3, the 4th power MOS pipe Q4
Grid, the 8th work(of the grid of metal-oxide-semiconductor Q5, the grid of the 6th power MOS pipe Q6, the 7th power MOS pipe Q7
The grid of rate metal-oxide-semiconductor Q8, the grid of the 9th power MOS pipe Q9, the grid of the tenth power MOS pipe Q10, described first
Grid, the 4th IGBT pipes M4 of the grid of IGBT pipes M1, the grid of the 2nd IGBT pipes M2, the 3rd IGBT pipes M3
Grid, the 5th IGBT pipes M5 grid and the 6th IGBT pipes M6 grid, be connected with driving circuit.
3. the two-way DC-AC translation circuits according to claim 2 for energy storage inverter, it is characterised in that：Described
One power MOS pipe Q1, the second power MOS pipe Q2, the third power MOS pipe Q3, the 4th power MOS pipe Q4, institute
State the 5th power MOS pipe Q5, the 6th power MOS pipe Q6, the 7th power MOS pipe Q7, the 8th power MOS pipe
Q8, the 9th power MOS pipe Q9, the tenth power MOS pipe Q10 are the enhanced metal-oxide-semiconductor of N-channel.
4. the two-way DC-AC translation circuits according to claim 2 for energy storage inverter, it is characterised in that：The change
The model HX1584-11029A of depressor T1.
5. the two-way DC-AC translation circuits according to claim 2 for energy storage inverter, it is characterised in that：The AC
It is load to exchange input/output module (109), or is the ends power grid AC.
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| CN112019082A (en) * | 2020-10-22 | 2020-12-01 | 浙江艾罗网络能源技术有限公司 | Single-phase bidirectional inversion control circuit and inversion control method thereof |
| CN112260543A (en) * | 2020-09-19 | 2021-01-22 | 许继电源有限公司 | High-gain high-frequency isolation bidirectional cascade DC/DC converter and control method thereof |
| CN113437775A (en) * | 2021-07-01 | 2021-09-24 | 深圳市德兰明海科技有限公司 | Reverse connection preventing circuit and energy storage inverter |
| CN116317066A (en) * | 2023-03-27 | 2023-06-23 | 广东威尔泰克科技有限公司 | Photovoltaic energy storage device and charge and discharge control method |
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