CN108429474B - Multi-level full-bridge converter and multi-level isolated bidirectional DC-DC converter - Google Patents
Multi-level full-bridge converter and multi-level isolated bidirectional DC-DC converter Download PDFInfo
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- CN108429474B CN108429474B CN201810291803.5A CN201810291803A CN108429474B CN 108429474 B CN108429474 B CN 108429474B CN 201810291803 A CN201810291803 A CN 201810291803A CN 108429474 B CN108429474 B CN 108429474B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33584—Bidirectional converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
- H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
Abstract
The invention discloses a multi-level full-bridge converter and a multi-level isolated bidirectional DC-DC converter. The multilevel full-bridge converter provided by the invention adopts the single-phase flying capacitor clamping three-level bridge arm, and a five-level output voltage state can be generated between two alternating current terminals.
Description
Technical Field
The invention relates to the field of power electronic power conversion, in particular to a multi-level full-bridge converter and a multi-level isolated bidirectional DC-DC converter.
Background
Modern transmission and distribution networks are revolutionarily changed, and the demand for direct current transmission and distribution is increasing. The load center increasingly depends on the electric power transmitted in a long distance, the direct current transmission mode has obvious advantages in the aspect of long-distance transmission or new energy power generation access, and more direct current type distributed power sources such as photovoltaic power generation, battery energy storage and the like are included on the power distribution side. More and more loads require the use of dc power. Such as data centers, LEDs, electric vehicles, etc. And a large number of consumer electronics such as personal computers, cell phones, and tablet computers. The direct current mode is adopted in the power distribution network, less power transmission corridors can be occupied, the characteristics of rapid controllability and the like of the power distribution network can be utilized, the problems of difficult power supply, high cost, difficult control of tide and the like in urban power supply are solved, and the safe, reliable and economic operation of an urban power grid is maintained.
Direct-current voltage is difficult to be converted by magnetic coupling, such as an alternating-current transformer, and therefore, conversion of direct-current voltage and power transfer must be realized by a DC-DC converter based on power electronics technology. For the direct current conversion occasion needing electrical isolation or the occasion with larger difference of direct current voltage grades on two sides, a transformer still needs to be adopted in the DC-DC converter. However, the power frequency transformer is bulky, heavy, high in loss and noise, and it is difficult to achieve high power density and high efficiency of the power conversion system. The replacement of the conventional line frequency transformer by the high frequency transformer is generally regarded as a necessary development trend of the next generation power conversion. The scheme of the high-frequency transformer has the advantages that the device is small in size, light in weight and low in cost, the problem that the voltage and current waveforms in a system are distorted due to iron core magnetic saturation of a traditional power frequency transformer can be solved, and if the switching frequency is increased to be more than 20kHz, the operation noise of the device can be greatly reduced. Especially, under the large background that a power conversion system in an intelligent power grid is more and more popular, the application prospect of the high-frequency isolation power conversion technology is wide.
The high-frequency isolated bidirectional DC-DC converter mainly comprises two full-bridge converters and a high-frequency isolation transformer. By controlling the square wave voltage at the high-frequency alternating current output side of the full-bridge converter, the magnitude and the phase of the voltage applied to the two ends of the auxiliary inductor can be controlled, and the magnitude and the flow direction of the power can be further controlled. Most of the existing full-bridge converters adopt a two-level full-bridge circuit, and under the condition that the voltage grade of a switching device is limited, the voltage which can be output by the two-level full-bridge circuit is also limited, so that the realization of a high-voltage and high-capacity bidirectional DC-DC converter is difficult, and the application field is also limited. Therefore, the full-bridge converter in the current DC-DC converter can only output two levels, which makes it difficult to realize a bidirectional DC-DC converter with high voltage and large capacity, and the application range is limited.
Disclosure of Invention
The invention provides a multi-level full-bridge converter and a multi-level isolated bidirectional DC-DC converter, which solve the technical problems that the full-bridge converter in the current DC-DC converter can only output two levels, so that the realization of the high-voltage large-capacity bidirectional DC-DC converter is difficult, and the application range is limited.
The invention provides a multi-level full-bridge converter, comprising: the first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube, the sixth switch tube, the seventh switch tube, the eighth switch tube, the first diode, the second diode, the third diode, the fourth diode, the fifth diode, the sixth diode, the seventh diode, the eighth diode, the first capacitor, the second capacitor and the third capacitor;
the first end of the first switch tube, the cathode of the first diode, the first end of the fifth switch tube, the cathode of the fifth diode and the first end of the third capacitor are electrically connected with each other to form a first direct current terminal;
a second end of the fourth switching tube, an anode of the fourth diode, a second end of the eighth switching tube, an anode of the eighth diode and a second end of the third capacitor are electrically connected with each other to form a second direct current terminal;
the second end of the second switching tube, the anode of the second diode, the first end of the third switching tube and the cathode of the third diode are electrically connected with each other to form a first alternating current terminal;
the second end of the sixth switching tube, the anode of the sixth diode, the first end of the seventh switching tube and the cathode of the seventh diode are electrically connected with each other to form a second alternating current terminal;
the first end of the first capacitor is respectively connected with the second end of the first switch tube, the anode of the first diode, the first end of the second switch tube and the cathode of the first diode;
the second end of the first capacitor is respectively and electrically connected with the second end of the third switching tube, the anode of the third diode, the first end of the fourth switching tube and the cathode of the fourth diode;
the first end of the second capacitor is respectively connected with the second end of the fifth switching tube, the anode of the fifth diode, the first end of the sixth switching tube and the cathode of the sixth diode;
the second end of the second capacitor is electrically connected with the second end of the seventh switch tube, the anode of the seventh diode, the first end of the eighth switch tube and the cathode of the eighth diode respectively.
Preferably, the first switching tube, the second switching tube, the third switching tube, the fourth switching tube, the fifth switching tube, the sixth switching tube, the seventh switching tube and the eighth switching tube are all IGBTs, wherein the first end of each switching tube is a collector of the IGBT, and the second end of each switching tube is an emitter of a drain of the NMOS.
Preferably, the first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube, the sixth switch tube, the seventh switch tube and the eighth switch tube are all NMOS, wherein the first end of each switch tube is a drain electrode of the NMOS, and the second end of each switch tube is a source electrode of the drain electrode of the NMOS.
Preferably, the first capacitor, the second capacitor and the third capacitor are all polar capacitors, wherein the first ends of the first capacitor, the second capacitor and the third capacitor are all positive ends of the polar capacitors, and the second ends of the first capacitor, the second capacitor and the third capacitor are all negative ends of the polar capacitors.
The invention provides a multilevel isolated bidirectional DC-DC converter, comprising: a transformer and two multi-level full-bridge converters of any one of the above;
two line ends of a first side winding of the transformer are electrically connected with a first alternating current terminal and a second alternating current terminal of a first multi-level full-bridge converter in a one-to-one correspondence mode;
and two line ends of a second side winding of the transformer are electrically connected with a first alternating current terminal and a second alternating current terminal of the second multi-level full-bridge converter in a one-to-one correspondence mode.
Preferably, the transformer is a medium frequency isolation transformer or a high frequency isolation transformer.
According to the technical scheme, the invention has the following advantages:
the invention provides a multi-level full-bridge converter, comprising: the first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube, the sixth switch tube, the seventh switch tube, the eighth switch tube, the first diode, the second diode, the third diode, the fourth diode, the fifth diode, the sixth diode, the seventh diode, the eighth diode, the first capacitor, the second capacitor and the third capacitor; the first end of the first switch tube, the cathode of the first diode, the first end of the fifth switch tube, the cathode of the fifth diode and the first end of the third capacitor are electrically connected with each other to form a first direct current terminal; a second end of the fourth switching tube, an anode of the fourth diode, a second end of the eighth switching tube, an anode of the eighth diode and a second end of the third capacitor are electrically connected with each other to form a second direct current terminal; the second end of the second switching tube, the anode of the second diode, the first end of the third switching tube and the cathode of the third diode are electrically connected with each other to form a first alternating current terminal; the second end of the sixth switching tube, the anode of the sixth diode, the first end of the seventh switching tube and the cathode of the seventh diode are electrically connected with each other to form a second alternating current terminal; the first end of the first capacitor is respectively connected with the second end of the first switch tube, the anode of the first diode, the first end of the second switch tube and the cathode of the first diode; the second end of the first capacitor is respectively and electrically connected with the second end of the third switching tube, the anode of the third diode, the first end of the fourth switching tube and the cathode of the fourth diode; the first end of the second capacitor is respectively connected with the second end of the fifth switching tube, the anode of the fifth diode, the first end of the sixth switching tube and the cathode of the sixth diode; the second end of the second capacitor is electrically connected with the second end of the seventh switch tube, the anode of the seventh diode, the first end of the eighth switch tube and the cathode of the eighth diode respectively.
The multilevel full-bridge converter provided by the invention adopts the single-phase flying capacitor clamping three-level bridge arm, and a five-level output voltage state can be generated between two alternating current terminals.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a circuit diagram of a multi-level full-bridge converter according to an embodiment of the present invention;
fig. 2 is a circuit diagram of a bridge arm of a multi-level full-bridge converter according to an embodiment of the present invention in a first operating mode;
fig. 3 is a circuit diagram of a bridge arm of a multi-level full-bridge converter according to an embodiment of the present invention in a second operating mode;
fig. 4 is a circuit diagram of a bridge arm of a multi-level full-bridge converter according to an embodiment of the present invention in a third operating mode;
fig. 5 is a circuit diagram of a multilevel isolated bidirectional DC-DC converter according to an embodiment of the present invention;
wherein the reference numbers are as follows:
s1, a first switch tube; s2, a second switch tube; s3, a third switch tube; s4, a fourth switching tube; s5, a fifth switch tube; s6, a sixth switching tube; s7, a seventh switch tube; s8, an eighth switch tube; d1, a first diode; d2, a second diode; d3, a third diode; d4, a fourth diode; d5, a fifth diode; d6, a sixth diode; d7, a seventh diode; d8, an eighth diode; c1, a first capacitance; c2, a second capacitor; c3, a third capacitance; DC1, a first direct current terminal; DC2, a second DC terminal; AC1, a first AC terminal; AC2, a second alternating current terminal; 1. a first multi-level full-bridge converter; 2. a transformer; 3. a second multi-level full bridge converter.
Detailed Description
The embodiment of the invention provides a multi-level full-bridge converter and a multi-level isolated bidirectional DC-DC converter, and solves the technical problems that the full-bridge converter in the current DC-DC converter can only output two levels, so that the realization of the high-voltage large-capacity bidirectional DC-DC converter is difficult, and the application range is limited.
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, an embodiment of the present invention provides an embodiment of a multilevel full-bridge converter, including: a first switch tube S1, a second switch tube S2, a third switch tube S3, a fourth switch tube S4, a fifth switch tube S5, a sixth switch tube S6, a seventh switch tube S7, an eighth switch tube S8, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, a seventh diode D7, an eighth diode D8, a first capacitor C1, a second capacitor C2 and a third capacitor C3;
a first terminal of the first switching tube S1, a cathode of the first diode D1, a first terminal of the fifth switching tube S5, a cathode of the fifth diode D5 and a first terminal of the third capacitor C3 are electrically connected to each other to form a first DC terminal DC 1;
a second end of the fourth switching tube S4, an anode of the fourth diode D4, a second end of the eighth switching tube S8, an anode of the eighth diode D8 and a second end of the third capacitor C3 are electrically connected to each other to form a second direct current terminal DC 2;
the second end of the second switch tube S2, the anode of the second diode D2, the first end of the third switch tube S3 and the cathode of the third diode D3 are electrically connected to each other to form a first alternating current terminal AC 1;
the second end of the sixth switching tube S6, the anode of the sixth diode D6, the first end of the seventh switching tube S7 and the cathode of the seventh diode D7 are electrically connected to each other to form a second AC terminal AC 2;
a first end of the first capacitor C1 is electrically connected to the second end of the first switch tube S1, the anode of the first diode D1, the first end of the second switch tube S2 and the cathode of the first diode D1, respectively;
a second end of the first capacitor C1 is electrically connected to a second end of the third switching tube S3, an anode of the third diode D3, a first end of the fourth switching tube S4 and a cathode of the fourth diode D4, respectively;
a first end of the second capacitor C2 is electrically connected to the second end of the fifth switch tube S5, the anode of the fifth diode D5, the first end of the sixth switch tube S6 and the cathode of the sixth diode D6, respectively;
a second terminal of the second capacitor C2 is electrically connected to the second terminal of the seventh switch tube S7, the anode of the seventh diode D7, the first terminal of the eighth switch tube S8 and the cathode of the eighth diode D8, respectively.
It should be noted that, in the multi-level full-bridge converter provided in this embodiment, a single-phase flying capacitor clamping three-level bridge arm is adopted, and a five-level output voltage state can be generated between two ac terminals.
The above is an embodiment of the multi-level full-bridge converter provided by the embodiment of the present invention, and the following is another embodiment of the multi-level full-bridge converter provided by the embodiment of the present invention.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, another embodiment of the multi-level full bridge converter according to the present invention includes: a first switch tube S1, a second switch tube S2, a third switch tube S3, a fourth switch tube S4, a fifth switch tube S5, a sixth switch tube S6, a seventh switch tube S7, an eighth switch tube S8, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, a seventh diode D7, an eighth diode D8, a first capacitor C1, a second capacitor C2 and a third capacitor C3;
a first terminal of the first switching tube S1, a cathode of the first diode D1, a first terminal of the fifth switching tube S5, a cathode of the fifth diode D5 and a first terminal of the third capacitor C3 are electrically connected to each other to form a first DC terminal DC 1;
a second end of the fourth switching tube S4, an anode of the fourth diode D4, a second end of the eighth switching tube S8, an anode of the eighth diode D8 and a second end of the third capacitor C3 are electrically connected to each other to form a second direct current terminal DC 2;
the second end of the second switch tube S2, the anode of the second diode D2, the first end of the third switch tube S3 and the cathode of the third diode D3 are electrically connected to each other to form a first alternating current terminal AC 1;
the second end of the sixth switching tube S6, the anode of the sixth diode D6, the first end of the seventh switching tube S7 and the cathode of the seventh diode D7 are electrically connected to each other to form a second AC terminal AC 2;
a first end of the first capacitor C1 is electrically connected to the second end of the first switch tube S1, the anode of the first diode D1, the first end of the second switch tube S2 and the cathode of the first diode D1, respectively;
a second end of the first capacitor C1 is electrically connected to a second end of the third switching tube S3, an anode of the third diode D3, a first end of the fourth switching tube S4 and a cathode of the fourth diode D4, respectively;
a first end of the second capacitor C2 is electrically connected to the second end of the fifth switch tube S5, the anode of the fifth diode D5, the first end of the sixth switch tube S6 and the cathode of the sixth diode D6, respectively;
a second terminal of the second capacitor C2 is electrically connected to the second terminal of the seventh switch tube S7, the anode of the seventh diode D7, the first terminal of the eighth switch tube S8 and the cathode of the eighth diode D8, respectively.
It should be noted that, assuming that the dc voltages of the first capacitor C1 and the second capacitor C2 in the multi-level full-bridge converter are E, and the dc voltage of the third capacitor C3 is 2E, taking the left arm in the multi-level full-bridge converter as an example, the control method and the voltage output state of the multi-level full-bridge converter are as follows, where the bold part of the line in fig. 2, fig. 3, and fig. 4 is the part in the operating state in the circuit, and the non-bold part is in the non-operating state:
when the first switching tube S1 is turned on, the second switching tube S2 is turned on, the third switching tube S3 is turned off, and the fourth switching tube S4 is turned off, as shown in fig. 2, the output voltage between the first AC terminal AC1 and the second DC terminal DC2 in the multi-level full-bridge converter is 2E;
when the first switching tube S1 is turned off, the second switching tube S2 is turned on, the third switching tube S3 is turned off, and the fourth switching tube S4 is turned on, as shown in fig. 3, the output voltage between the first AC terminal AC1 and the second DC terminal DC2 in the multi-level full-bridge converter is E;
when the first switching tube S1 is turned off, the second switching tube S2 is turned off, the third switching tube S3 is turned on, and the fourth switching tube S4 is turned on, as shown in fig. 4, the output voltage between the first AC terminal AC1 and the second DC terminal DC2 in the multi-level full-bridge converter is 0;
as described above, the output voltage of the first AC terminal AC1 to the second DC terminal DC2 to the second DC terminal DC2 of the multi-level full-bridge converter can be three voltage states of 0, E, and 2E, the left and right arms are combined into one multi-level full-bridge converter, and the output voltage between the first AC terminal AC1 and the second AC terminal AC2 of the multi-level full-bridge converter can output five voltage states of-2E, -E, 0, E, and 2E.
Further, the first switch tube S1, the second switch tube S2, the third switch tube S3, the fourth switch tube S4, the fifth switch tube S5, the sixth switch tube S6, the seventh switch tube S7, and the eighth switch tube S8 are IGBTs, wherein the first end of each switch tube is a collector of the IGBT, and the second end of each switch tube is an emitter of a drain of the NMOS.
It should be noted that an IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of a BJT (Bipolar Transistor) and an MOS (Insulated Gate field effect Transistor), and has the advantages of both high input impedance of the MOSFET and low on-state voltage drop of the GTR.
Further, the first switch tube S1, the second switch tube S2, the third switch tube S3, the fourth switch tube S4, the fifth switch tube S5, the sixth switch tube S6, the seventh switch tube S7, and the eighth switch tube S8 are all NMOS, wherein the first end of each switch tube is a drain of the NMOS, and the second end of each switch tube is a source of the drain of the NMOS.
It should be noted that an NMOS (N-Metal-Oxide-Semiconductor) transistor is one of the switching transistors, and two N + regions with high doping concentration are formed on a P-type silicon substrate with lower doping concentration (providing a large number of movable holes) (there are a large number of electron sources providing free electrons for current flow in the N + regions), and two electrodes are led out by using Metal aluminum and respectively used as a drain and a source, then a thin silicon dioxide (SiO2) insulating layer is covered on the surface of the Semiconductor, an aluminum electrode (usually polysilicon) is further mounted on the insulating layer between the drain and the source as a gate, and an electrode is also led out on the substrate, so as to form an N-channel enhancement MOS transistor;
the NMOS has the advantages of high switching speed and low switching loss;
in addition to the NMOS and IGBT, the first switch tube S1 is a module S1And a second switching tube S2 module S2Other types of switch tubes can be used, and the switch tubes can be selected according to requirements in the practical application process.
Further, the first capacitor C1, the second capacitor C2, and the third capacitor C3 are all polar capacitors, wherein first terminals of the first capacitor C1, the second capacitor C2, and the third capacitor C3 are all positive terminals of the polar capacitors, and second terminals of the first capacitor C1, the second capacitor C2, and the third capacitor C3 are all negative terminals of the polar capacitors.
It should be noted that the polar capacitor has a large capacity, and can be applied to high-voltage and high-power occasions, and certainly, a non-polar capacitor may be used in the present application, which is not particularly limited herein and is determined according to actual situations;
the multi-level full-bridge converter provided by the embodiment adopts the single-phase flying capacitor clamping three-level bridge arm, and a five-level output voltage state can be generated between two alternating current terminals.
The above is another embodiment of the multilevel full-bridge converter provided by the embodiment of the present invention, and the following is an embodiment of the multilevel isolated bidirectional DC-DC converter provided by the embodiment of the present invention.
Referring to fig. 5, an embodiment of the present invention provides an embodiment of a multilevel isolated bidirectional DC-DC converter, including:
a transformer 2 and two multi-level full-bridge converters of any one of the above;
two line ends of a first side winding of the transformer 2 are electrically connected with a first alternating current terminal AC1 and a second alternating current terminal AC2 of the first multi-level full-bridge converter 1 in a one-to-one correspondence manner;
two line ends of the second side winding of the transformer 2 are electrically connected with the first alternating current terminal AC1 and the second alternating current terminal AC2 of the second multi-level full-bridge converter 3 in a one-to-one correspondence.
Further, the transformer 2 is a medium frequency isolation transformer or a high frequency isolation transformer.
It should be noted that the operating frequency of the intermediate frequency transformer is higher than 200Hz and lower than the intermediate frequency (10 kHz);
the high-frequency transformer is a power transformer with the working frequency exceeding the intermediate frequency (10kHz), is mainly used as a high-frequency switching power transformer in a high-frequency switching power supply, is also used as a high-frequency inverter power transformer in a high-frequency inverter power supply and a high-frequency inverter welding machine, and can be divided into several grades according to the working frequency: 10kHz-50kHz, 50kHz-100kHz, 100kHz-500kHz, 500kHz-1MHz and more than 10 MHz.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (3)
1. A multilevel isolated bidirectional DC-DC converter, comprising: two multilevel full bridge converters, transformers;
two line ends of a first side winding of the transformer are electrically connected with a first alternating current terminal and a second alternating current terminal of a first multi-level full-bridge converter in a one-to-one correspondence mode;
two line ends of a second side winding of the transformer are electrically connected with a first alternating current terminal and a second alternating current terminal of a second multi-level full-bridge converter in a one-to-one correspondence mode;
wherein, many level full-bridge converter includes:
the first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube, the sixth switch tube, the seventh switch tube, the eighth switch tube, the first diode, the second diode, the third diode, the fourth diode, the fifth diode, the sixth diode, the seventh diode, the eighth diode, the first capacitor, the second capacitor and the third capacitor;
the first end of the first switch tube, the cathode of the first diode, the first end of the fifth switch tube, the cathode of the fifth diode and the first end of the third capacitor are electrically connected with each other to form a first direct current terminal;
a second end of the fourth switching tube, an anode of the fourth diode, a second end of the eighth switching tube, an anode of the eighth diode and a second end of the third capacitor are electrically connected with each other to form a second direct current terminal;
the second end of the second switching tube, the anode of the second diode, the first end of the third switching tube and the cathode of the third diode are electrically connected with each other to form a first alternating current terminal;
the second end of the sixth switching tube, the anode of the sixth diode, the first end of the seventh switching tube and the cathode of the seventh diode are electrically connected with each other to form a second alternating current terminal;
the first end of the first capacitor is respectively connected with the second end of the first switch tube, the anode of the first diode, the first end of the second switch tube and the cathode of the first diode;
the second end of the first capacitor is respectively and electrically connected with the second end of the third switching tube, the anode of the third diode, the first end of the fourth switching tube and the cathode of the fourth diode;
the first end of the second capacitor is respectively connected with the second end of the fifth switching tube, the anode of the fifth diode, the first end of the sixth switching tube and the cathode of the sixth diode;
the second end of the second capacitor is respectively and electrically connected with the second end of the seventh switching tube, the anode of the seventh diode, the first end of the eighth switching tube and the cathode of the eighth diode;
the first switching tube, the second switching tube, the third switching tube, the fourth switching tube, the fifth switching tube, the sixth switching tube, the seventh switching tube and the eighth switching tube are all IGBTs, wherein the first end of each switching tube is a collector of the IGBT, and the second end of each switching tube is an emitter of the IGBT;
or:
the first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube, the sixth switch tube, the seventh switch tube and the eighth switch tube are all NMOS, wherein the first end of each switch tube is the drain electrode of the NMOS, and the second end of each switch tube is the source electrode of the NMOS.
2. The multilevel isolated bidirectional DC-DC converter according to claim 1, wherein the first, second and third capacitors are all polar capacitors, wherein the first terminals of the first, second and third capacitors are all positive terminals of the polar capacitors, and the second terminals of the first, second and third capacitors are all negative terminals of the polar capacitors.
3. The multilevel isolated bidirectional DC-DC converter according to claim 1, wherein the transformer is a medium frequency isolation transformer or a high frequency isolation transformer.
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| CN101272088A (en) * | 2008-05-07 | 2008-09-24 | 中国科学院电工研究所 | Back-to-back striding capacitance convertor of wind power generation system |
| CN102097967A (en) * | 2010-12-10 | 2011-06-15 | 清华大学 | Cascaded multi-level converter |
| US8411473B2 (en) * | 2010-12-20 | 2013-04-02 | Allis Electric Co., Ltd. | Three-phase power supply with three-phase three-level DC/DC converter |
| WO2016016475A1 (en) * | 2014-08-01 | 2016-02-04 | Eisergy Limited | Power factor correction stages in power conversion |
| CN107465358A (en) * | 2017-07-11 | 2017-12-12 | 江苏固德威电源科技股份有限公司 | Single-phase five-level converter and its modulator approach of use |
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| CN101272088A (en) * | 2008-05-07 | 2008-09-24 | 中国科学院电工研究所 | Back-to-back striding capacitance convertor of wind power generation system |
| CN102097967A (en) * | 2010-12-10 | 2011-06-15 | 清华大学 | Cascaded multi-level converter |
| US8411473B2 (en) * | 2010-12-20 | 2013-04-02 | Allis Electric Co., Ltd. | Three-phase power supply with three-phase three-level DC/DC converter |
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