CN108206643A - Power cell and the Technics of Power Electronic Conversion device using the power cell - Google Patents
Power cell and the Technics of Power Electronic Conversion device using the power cell Download PDFInfo
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- CN108206643A CN108206643A CN201611191912.7A CN201611191912A CN108206643A CN 108206643 A CN108206643 A CN 108206643A CN 201611191912 A CN201611191912 A CN 201611191912A CN 108206643 A CN108206643 A CN 108206643A
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- power
- semiconductor switch
- power semiconductor
- bridge arm
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 132
- 239000004065 semiconductor Substances 0.000 claims abstract description 306
- 239000013307 optical fiber Substances 0.000 claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims description 77
- 230000007935 neutral effect Effects 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 230000003068 static effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- CUZMQPZYCDIHQL-VCTVXEGHSA-L calcium;(2s)-1-[(2s)-3-[(2r)-2-(cyclohexanecarbonylamino)propanoyl]sulfanyl-2-methylpropanoyl]pyrrolidine-2-carboxylate Chemical group [Ca+2].N([C@H](C)C(=O)SC[C@@H](C)C(=O)N1[C@@H](CCC1)C([O-])=O)C(=O)C1CCCCC1.N([C@H](C)C(=O)SC[C@@H](C)C(=O)N1[C@@H](CCC1)C([O-])=O)C(=O)C1CCCCC1 CUZMQPZYCDIHQL-VCTVXEGHSA-L 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/493—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
Power cell, including：Multiple power conversion circuits, the first output terminal of the one of which of two neighboring power conversion circuit and the second output terminal of wherein another one are sequentially connected in multiple translation circuits；Local controller, to export multiple control signal；Multiple driving circuits, the break-make of multiple power semiconductor switch is driven according to multiple control signal output drive signal, control signal in multiple power conversion circuits corresponding to the power semiconductor switch of same position is identical, the power semiconductor switch while break-make of same position in multiple power conversion circuits.Power cell of the present invention can share higher voltage, reduce the quantity of optical fiber, accessory power supply and local controller, simplify circuit structure, lifting system reliability can be used low voltage power devices and realize the purpose for reducing power cell quantity, cost-effective, it only needs that voltage clamp circuit is configured for each power conversion circuit, the quantity of voltage clamp circuit is reduced, reduces cost, improves system reliability.
Description
Cross reference to related applications
This application claims submitting on December 16th, 2016 application No. is 201611170857.3, entitled " power cell
And the Technics of Power Electronic Conversion device using the power cell " China's application priority, content is incorporated herein by reference.
Technical field
This application involves power electronics field, more particularly to a kind of power cell and this power cell of use
Technics of Power Electronic Conversion device.
Background technology
It is limited by the stress levels of current electronic power switch device, in high-power application scenario, power cell
The Cascade Topology Structure of overlapped in series is a kind of preferable solution.Traditional concatenated schemes need to be equipped with to each power cell
One unjacketed optical fiber, accessory power supply, control panel.And the raising of voltage class, the quantity of cascade power cell is needed also to increase, is caused
The quantity of optical fiber, accessory power supply and control panel also sharply increases, and system structure design is complicated, of high cost, while can also reduce and be
The reliability of system.
Fig. 1, Fig. 2 show the signal of currently used static reactive generator (Static Var Generator, SVG)
Figure, the wherein SVG include three-phase circuit, often the cascade of power units connection in circuitry phase.
As shown in Figure 1, every one-phase circuit of SVG is all cascaded by multiple power cells 1, wherein, each power cell
Including first end and second end, the filtered device L of first end of first power cell per one-phase circuit is connected respectively to three
On A, B and C three-phase line of phase power grid, the second end of one of them of two neighboring power cell connects with another first end
It connects, the second end of the last one power cell per one-phase circuit is connected with each other.
As described in Figure 2, every one-phase circuit of SVG is all cascaded by 8 power cell P1 to P8, each power cell packet
First end and second end is included, wherein the second end of one of them of two neighboring power cell is connect with another first end,
For example, the second end of power cell P1 is connect with the first end of power cell P2, the second end and power cell of power cell P2
The first end connection of P3, and so on, the second end of power cell P7 is connect with the first end of power cell P8, in three-phase circuit
The filtered circuit of first end (being made of inductance, resistance and capacitance, such as LCL) of three power cell P1 is connected to three
A, B and C phase of phase power grid G and load Rload, the second end of three power cell P8 is connected with each other in three-phase circuit.Each power
Unit includes four power devices 2, and each power device 2 is made of a power semiconductor switch S and a diode D,
The collector of power semiconductor switch S is connect with the cathode of diode D, and the emitter of power semiconductor switch S is with diode D's
Anode connects.
Single-phase SVG also includes multiple power cells, and each power cell includes first end and second end, two neighboring power
The unit first end of one of them is connect with another second end.
Power cell 1 shown in FIG. 1 can be H-bridge circuit or other circuit topological structures, as half-bridge circuit,
Three level-conversion circuits etc..For example, by power cell for for H-bridge circuit, H-bridge circuit is as shown in figure 3, including power semiconductor
Switch S1 to S4 and bus capacitor C.The first end of power semiconductor switch S1 is connected to the positive terminal of bus capacitor C and power half
Conductor switchs the first end of S3, and the second end of power semiconductor switch S1 is connected to the first end of power semiconductor switch S4, work(
The second end of rate semiconductor switch S4 is connected to the negative pole end of bus capacitor C and the second end of power semiconductor switch S2, power
The first end of the second end connection power semiconductor switch S2 of semiconductor switch S3, the second end conduct of power semiconductor switch S1
First output terminal O of H-bridge circuit1, the second output terminal O of the second end of power semiconductor switch S3 as H-bridge circuit2。
If wind park of the cascading topological structure of above-mentioned power cell applied to 35KV usually has 3 kinds of implementations, specifically
Scheme is described as follows：
1st, each power cell use H-bridge circuit, and the power semiconductor switch S1 to S4 in H-bridge circuit can select it is low
Press power device, such as low pressure IGBT (Insulated Gate Bipolar Translator).
Advantage：Technique is more ripe at present, and market dosage is larger by low pressure IGBT (such as 1700V), and cost is acceptable
In the range of, each power semiconductor switch is made of an IGBT, without considering voltage-sharing.
Shortcoming：Due to relatively low (such as the dc bus at the IGBT of 1700V, bus capacitor C both ends of single power device voltage
Voltage is in 1000V or so), thus need to use about 72 grades of H-bridge circuits cascades in every circuitry phase.The quantity of H-bridge circuit is more, is
The reliability of system will be impacted, and each H-bridge circuit is equipped with a unjacketed optical fiber and (is carried out in high pressure applications usually using optical fiber
Signal transmission), accessory power supply and control panel, each H-bridge circuit are required for independent control.Since the cascade quantity of H-bridge circuit is more,
Such scheme can cause the quantity of optical fiber, accessory power supply and control panel very much so that the control of whole system and structure design become
Complicated, cost increase is obtained, the reliability of simultaneity factor will reduce.
2nd, each power cell uses H-bridge circuit, and the power semiconductor switch S1 to S4 in H-bridge circuit can select height
Press power device, such as high pressure IGBT (Insulated Gate Bipolar Translator))
Advantage：Single power device pressure resistance is higher (such as IGBT of 6500V), the dc bus electricity at bus capacitor C both ends
3000V or so is pressed in, thus needs to use about 18 grades of H-bridge circuits in every circuitry phase, reduces the quantity of cascade H-bridge circuit；
Reduce the quantity of optical fiber, accessory power supply, control panel simultaneously, can in reduction system this partial devices cost, and simplify and be
System control and structure design, while increase reliability.
Shortcoming：The cost of high pressure IGBT is significantly larger than low pressure IGBT, and (the IGBT costs of 6500V are significantly larger than 1700V's
4 times of IGBT costs), lead to the cost that can be far above control panel and optical fiber saving using the increased cost of high pressure IGBT, lead
System cost is caused to be significantly increased.
3rd, each power cell use H-bridge circuit, and the power semiconductor switch S1 to S4 in H-bridge circuit can select it is low
Pressure power device series connection is formed by connecting,.
Advantage：Reduce the quantity of cascade H-bridge circuit, the cascade quantity of H-bridge circuit is identical with second scheme, still
Power semiconductor switch in each H-bridge circuit is connected in series using multiple low voltage power devices (for example, by using 4 1700V
IGBT is connected in series equivalent 1 6500V IGBT), reduce system cost.In contrast to the first scheme, this scheme cascade
The quantity of H-bridge circuit reduce, optical fiber, accessory power supply, control panel quantity also reduces, cost reduction, and controls and simplify with structure,
Reliability increases；In contrast to second scheme, the cost using one high voltage power device of multiple low pressure IGBT series equivalents is low
In single high voltage power device, this scheme by low voltage power devices series equivalent high voltage power device accounts in terms of totle drilling cost
Advantage.
Shortcoming：There is voltage un-balance in low pressure IGBT series connection applications, in order to solve this problem, need to each low pressure
IGBT is equipped with clamper plate, causes clamper plate quantity more, reduces system reliability.
Invention content
The application's is designed to provide a kind of power cell and the Technics of Power Electronic Conversion dress using this power cell
It puts, it is one or more caused by the limitation of the relevant technologies and defect so as to overcome the problems, such as at least to a certain extent.
Other characteristics and advantages of the application will be by the following detailed description apparent from or partially by the application
Practice and acquistion.
According to the one side of the application, a kind of power cell is provided, which is characterized in that including：
Multiple power conversion circuits, each power conversion circuit, which includes at least one, has multiple power semiconductor switch
Bridge arm, and each power conversion circuit includes the first output terminal and second output terminal, wherein the multiple translation circuit
In the two neighboring power conversion circuit one of which first output terminal and wherein another one it is described second defeated
Outlet is sequentially connected, and remaining two the first output terminals and second output terminal form the first end and second of the power cell
End；
Local controller, to export multiple control signal；And
Multiple driving circuits are coupled with the local controller, to receive the multiple control signal, and according to described
Multiple control signal exports each drive signal respectively, to drive the on or off of the multiple power semiconductor switch,
Wherein the multiple power conversion circuit is identical, and the quantity of the multiple control signal becomes with each power
Change the power semiconductor switch in circuit quantity is identical and the multiple power conversion circuit in same position institute
The control signal stated corresponding to power semiconductor switch is identical so that same position in the multiple power conversion circuit
The power semiconductor switch is simultaneously turned on or is simultaneously turned off.
According to one embodiment, wherein the power cell further includes：
Accessory power supply is connect with the local controller, to power for the local controller.
According to one embodiment, wherein the quantity of the multiple driving circuit and the quantity phase of the power semiconductor switch
Together, each driving circuit drives the turn-on and turn-off of the corresponding power semiconductor switch.
According to one embodiment, wherein the multiple driving circuit is directly connected to or described with the local controller
Multiple driving circuits are connect with the local controller by Magnetic isolation device or the multiple driving circuit and the local
Controller is connected by light isolation device.
According to one embodiment, wherein the power conversion circuit includes：
Bus capacitor and voltage clamp circuit, the both ends of the bus capacitor are connected in the both ends of the bridge arm in parallel, and
The voltage clamp circuit is connected in parallel in the both ends of the bus capacitor.
According to one embodiment, wherein the busbar voltage between the both ends of the bus capacitor is by the voltage clamp circuit
Clamper is in a preset range.
According to one embodiment, wherein the multiple power conversion circuit is the n power conversion circuits, the 1st institute
First output terminal for stating power conversion circuit is the first end of the power cell, and the 1st power conversion is electric
The second output terminal on road is connect with first output terminal of the 2nd power conversion circuit, is sequentially connected down, directly
Described first to the second output terminal and n-th of the power conversion circuit of (n-1)th power conversion circuit is defeated
Outlet connects, and the second output terminal of n-th of power conversion circuit is the second end of the power cell, wherein
N is the natural number more than 1.
According to one embodiment, wherein the power conversion circuit is H-bridge circuit, wherein the H-bridge circuit includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and institute
It states the second bridge arm and includes upper power semiconductor switch and lower power semiconductor switch, the upper power half of first bridge arm
The first output terminal that conductor switchs and the tie point of the lower power semiconductor switch is the power conversion circuit, described second
The upper power semiconductor switch of bridge arm and the tie point of the lower power semiconductor switch are the power conversion circuit
Second output terminal.
According to one embodiment, wherein the power conversion circuit is half-bridge circuit, the half-bridge circuit includes the bridge
Arm, wherein the bridge arm includes：The upper power semiconductor switch and lower power semiconductor switch having a first end and a second end, institute
The second end for stating power semiconductor switch is connected to one with the first end of the lower power semiconductor switch and connect
Point, the tie point are the first output terminal of the power conversion circuit, and the second end of the lower power semiconductor switch is
The second output terminal of the power conversion circuit.
According to one embodiment, wherein the power conversion circuit is diode clamp tri-level circuit, wherein described two
Pole pipe clamper tri-level circuit includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and institute
The second bridge arm is stated to open including respective first power semiconductor switch, the second power semiconductor switch, third power semiconductor
Pass and the 4th power semiconductor switch, wherein first power semiconductor switch of first bridge arm, second power
Semiconductor switch, the third power semiconductor switch and the 4th power semiconductor switch are connected in series with, first bridge
Second power semiconductor switch of arm and the tie point of the third power semiconductor switch are the power conversion circuit
The first output terminal, it is first power semiconductor switch of second bridge arm, second power semiconductor switch, described
Third power semiconductor switch and the 4th power semiconductor switch are connected in series with, second power of second bridge arm
The tie point of semiconductor switch and the third power semiconductor switch is the second output terminal of the power conversion circuit；
First bus capacitor, the second bus capacitor, wherein first bus capacitor and second bus capacitor series connection
It is connected in parallel after connection with first bridge arm and second bridge arm；And
First switch, second switch, third switch and the 4th switch, wherein the first switch and the second switch string
The connection of first power semiconductor switch and second power semiconductor switch of first bridge arm is connected to after connection
Between point and the third power semiconductor switch of first bridge arm and the tie point of the 4th power semiconductor switch,
Be connected to after third switch and the described 4th switch series connection second bridge arm first power semiconductor switch and
The third power semiconductor switch and described of the tie point of second power semiconductor switch and second bridge arm
Between the tie point of four power semiconductor switch, the tie point of the first switch and the second switch and first busbar
Capacitance is connected with the tie point of second bus capacitor, the tie point of third switch and the 4th switch and described the
One bus capacitor is connected with the tie point of second bus capacitor.
According to one embodiment, wherein the power conversion circuit is striding capacitance tri-level circuit, wherein it is described fly across
Capacitance tri-level circuit includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and institute
The second bridge arm is stated to open including respective first power semiconductor switch, the second power semiconductor switch, third power semiconductor
Pass and the 4th power semiconductor switch, wherein first power semiconductor switch of first bridge arm, second power
Semiconductor switch, the third power semiconductor switch and the 4th power semiconductor switch are connected in series with, first bridge
Second power semiconductor switch of arm and the tie point of the third power semiconductor switch are the power conversion circuit
The first output terminal, it is first power semiconductor switch of second bridge arm, second power semiconductor switch, described
Third power semiconductor switch and the 4th power semiconductor switch are connected in series with, second power of second bridge arm
The tie point of semiconductor switch and the third power semiconductor switch is the second output terminal of the power conversion circuit；
First bus capacitor, the second bus capacitor, wherein first bus capacitor and second bus capacitor series connection
It is connected in parallel after connection with first bridge arm and second bridge arm；And
First capacitance and the second capacitance, wherein first power half of first capacitance connection in first bridge arm
Conductor switchs and the third power semiconductor of the tie point of second power semiconductor switch and first bridge arm is opened
It closes between the tie point of the 4th power semiconductor switch, second capacitance connection is described the of second bridge arm
The third power of the tie point and second bridge arm of one power semiconductor switch and second power semiconductor switch
Between the tie point of semiconductor switch and the 4th power semiconductor switch.
According to one embodiment, wherein the power conversion circuit is the controllable tri-level circuit of neutral point, wherein in described
The property controllable tri-level circuit of point includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and institute
It states the second bridge arm and includes respective upper power semiconductor switch and lower power semiconductor switch, wherein the institute of first bridge arm
State first output of the tie point of power semiconductor switch and the lower power semiconductor switch for the power conversion circuit
End, the upper power semiconductor switch of second bridge arm and the tie point of the lower power semiconductor switch are the power
The second output terminal of translation circuit,
First bus capacitor, the second bus capacitor, wherein first bus capacitor and second bus capacitor series connection
It is connected in parallel after connection with first bridge arm and second bridge arm；And
First switch group and second switch group, wherein the first switch group is connected to the upper work(of first bridge arm
The tie point of rate semiconductor switch and the lower power semiconductor switch and first bus capacitor and second busbar electricity
Between the tie point of appearance, the second switch group be connected to second bridge arm the upper power semiconductor switch and it is described under
Between the tie point of power semiconductor switch and the tie point of first bus capacitor and second bus capacitor.
A kind of Technics of Power Electronic Conversion device another aspect of the present disclosure provides, which is characterized in that including：
Master controller, to export main control signal；And
At least power cell of previous embodiment, the local controller is coupled with the master controller, to receive
Main control signal is stated, to generate the corresponding control signal.
According to one embodiment, wherein an at least power cell is multiple, the two neighboring power cell its
The second end of middle one is connect with the first end of wherein another one, and the local control of each power cell
Device processed is coupled with the master controller.
According to one embodiment, wherein the local controller is connect or described with the master controller by optical fiber
Local controller is directly electrically connected with the master controller.
Each power cell 100 is equivalent in the first scheme of the prior art and only includes a power conversion circuit 110,
Since each power cell 100 corresponds to a unjacketed optical fiber, accessory power supply 150 and control panel etc., and power conversion circuit is more.Cause
This, compared to the first scheme of the prior art, the power cell 100 of embodiment of the present invention includes multiple power conversion circuits
110, higher voltage can be shared, therefore, the quantity of power cell 100 also can be less, so as to reduce optical fiber, accessory power supply
150 and the quantity of 120 grade of local controller, circuit structure is simplified, improves system reliability.
The second scheme of the prior art is so as to reduce the number of cascade power cell 100 using high voltage power device
Amount, and high voltage power device cost is higher.It is equally real that low voltage power devices can be used in the power cell 100 of embodiment of the present invention
The purpose of 100 quantity of power cell is now reduced, and compared to the second scheme of the prior art, present invention saves costs.
The third scheme of the prior art is to be connected in series with to be equivalent to high pressure by multiple identical power semiconductor switch
Power device need to be that voltage clamp circuit is configured in each power semiconductor switch in this way to prevent voltage un-balance.And the present invention is implemented
The power cell 100 of mode only needs that voltage clamp circuit is configured for each power conversion circuit 110, so as to reduce voltage
The quantity of clamp circuit reduces cost, improves system reliability.
Description of the drawings
Its example embodiment is described in detail by referring to accompanying drawing, above and other target of the invention, feature and advantage will
It becomes more fully apparent.
Fig. 1 is the schematic diagram of currently used static reactive generator (Static Var Generator, SVG)；
Fig. 2 is the more specific schematic diagram of currently used static reactive generator；
Fig. 3 is the schematic diagram of H-bridge circuit；
Fig. 4 is the schematic diagram according to a kind of power cell 100 of embodiment of the present invention；
Fig. 5 is the schematic diagram according to a kind of power cell 100 of another embodiment of the present invention；
Fig. 6 is the schematic diagram according to a kind of power cell 100 of another embodiment of the present invention；
Fig. 7 is the schematic diagram according to a kind of power cell 100 of another embodiment of the present invention；
Fig. 8 is the schematic diagram according to a kind of power cell of another embodiment of the present invention；
Fig. 9 is the schematic diagram according to a kind of power cell of another embodiment of the present invention；
Figure 10 is the schematic diagram according to a kind of power cell of another embodiment of the present invention；
Figure 11 is the schematic diagram according to a kind of power cell of another embodiment of the present invention；And
Figure 12 is a kind of Technics of Power Electronic Conversion device according to the present invention.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the present invention will more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Attached drawing is only the present invention
Schematic illustrations, be not necessarily drawn to scale.Identical reference numeral represents same or similar part in figure, thus
Repetition thereof will be omitted.
In addition, described feature, structure or characteristic can be incorporated in one or more implementations in any suitable manner
In mode.In the following description, many details are provided to fully understand embodiments of the present invention so as to provide.So
And it will be appreciated by persons skilled in the art that technical scheme of the present invention can be put into practice and omit one in the specific detail
Or more or may be used other methods, constituent element, device, step etc..In other cases, it is not shown in detail or describes
Known features, method, apparatus, realization or operation are to avoid a presumptuous guest usurps the role of the host and each aspect of the present invention is caused to thicken.
Fig. 4 is a kind of power cell 100 of embodiment of the present invention, including：Multiple power conversion circuit 110-1 ... 110-
N, local controller 120 and multiple driving circuits 130.
Wherein each power conversion circuit 110, which includes at least one, has multiple power semiconductor switch (such as Q11、Q12) bridge
Arm 111, and each power conversion circuit 110 includes the first output terminal O1With second output terminal O2, phase in plurality of translation circuit
First output terminal O of the one of which of adjacent two power conversion circuits 1101With the second output terminal O of another one2It is sequentially connected, remains
Two remaining the first output terminals and second output terminal form first end (such as first power conversion circuit 110 of power cell 100
The first output terminal O1) and second end (the second output terminal O of such as last first power conversion circuit 110-n2).Specifically,
Multiple power conversion circuits be n power conversion circuit, the first output terminal O of the 1st power conversion circuit 110-11For power
The first end of unit 100, the second output terminal O of the 1st power conversion circuit 110-12With the 2nd power conversion circuit 110-2
The first output terminal O1 connections, be sequentially connected, until the second output terminal O of (n-1)th power conversion circuit2With n-th of power
The first output terminal O of translation circuit 110-n1Connection, the second output terminal O of n-th of power conversion circuit 110-n2For power cell
100 second end, wherein n are the natural number more than 1.
Local controller 120 is exporting multiple control signal (not shown).
Multiple driving circuits 130 are coupled with local controller 120, to receive the multiple control signal, and according to institute
It states multiple control signal and exports each drive signal respectively, carry out the driving power semiconductor switch (Q in such as figure11、Q12、Q13……
Qn4) on or off.
In Fig. 4, it is all identical power conversion circuit that multiple power conversion circuits, which are, and control the quantity of signal with it is every
The quantity of power semiconductor switch in a power conversion circuit is identical.The power of same position half in multiple power conversion circuits
The control signal that the corresponding driving circuit 130 of conductor switch is received is identical so that identical bits in multiple power conversion circuits
The power semiconductor switch put is simultaneously turned on or is simultaneously turned off.
That is, each power cell 100 includes multiple identical power conversion circuits, each power conversion circuit phase
Power semiconductor switch with position is controlled by identical control signal, therefore, each power in each power cell 100
The function of translation circuit 110 is identical.
Wherein Fig. 4 illustrates using power conversion circuit 110-1 ... 110-n as H-bridge circuit as example, however this hair
The power conversion circuit 110-1 ... 110-n of bright embodiment is not limited to H-bridge circuit.
In addition, referring to Fig. 5, in some embodiments, power cell 100 further includes accessory power supply 150.Accessory power supply
150 connect with local controller 120, to power for local controller 120.
Since each power cell 100 only needs one accessory power supply 150 of configuration, the power cell of present embodiment
The 100 required accessory power supplys 150 of the Technics of Power Electronic Conversion device applied are less, cost-effective and simplified circuit structure.
In some embodiments, the quantity of driving circuit 130 is identical with the quantity of power semiconductor switch, each to drive
Circuit 130 drives the corresponding power semiconductor switch (Q in such as figure11、Q12、Q13……Qn4) turn-on and turn-off.
That is, each driving circuit 130 be used for transmission a control signal to specific power semiconductor switch with
Control its turn-on and turn-off.
In some embodiments, multiple driving circuits 130 are directly electrically connected with local controller 120.
In some embodiments, multiple driving circuits 130 are connect with local controller 120 by Magnetic isolation device.
In some embodiments, multiple driving circuits 130 are connect with local controller 120 by light isolation device.
There is more reliable, high-performance, low-power consumption using Magnetic isolation device.There is signal list using light isolation device
To transmission, input terminal and output terminal fully achieve electrical isolation, output signal on input terminal without influence, strong antijamming capability,
The operation is stable, the advantages that contactless, service life is long, efficiency of transmission is high.
In addition, referring to Fig. 6, in some embodiments, power conversion circuit further includes bus capacitor C and voltage clamping
Circuit 160, the both ends of bus capacitor C are connected in the both ends of bridge arm 111 in parallel, and voltage clamp circuit 160 is connected in parallel in mother
The both ends of line capacitance C.
In the present embodiment, the DC bus-bar voltage between the both ends of bus capacitor C is by 160 clamper of voltage clamp circuit
Within a predetermined range.Here the various operating voltage ranges that preset range can be well known to those skilled in the art, no longer
It repeats.
Due in each power cell 100, the first output terminal of the one of which of adjacent two power conversion circuits
It is sequentially connected in series with the second output terminal of another one, can be each power conversion circuit the problem of to avoid the occurrence of voltage un-balance
Bus capacitor C both ends setting voltage clamp circuit 160, bus capacitor C is in parallel, and simultaneously with voltage clamp circuit 160
It is coupled to the both ends of bridge arm 111.Thus, the DC bus-bar voltage between the both ends of each power conversion circuit bus capacitor C
It is just clamped within a predetermined range so that each power conversion circuit is not in overpressure situation, is conducive to that power is protected partly to lead
Body switchs.
Due to only needing the bus capacitor C's for each power conversion circuit in the power cell 100 of embodiment of the present invention
Voltage clamp circuit 160 is configured in both ends, without voltage clamp circuit being configured, therefore can subtract for each power semiconductor switch
The quantity of few voltage clamp circuit, reduces cost and circuit complexity, improves system reliability.
For convenience, it is assumed that in some embodiments, multiple power conversion circuits are n power conversion circuit, the 1st
First output terminal O of a power conversion circuit1For the first end of power cell 100, the second output of the 1st power conversion circuit
Hold O2With the first output terminal O of the 2nd power conversion circuit1Connection, is sequentially connected down, until (n-1)th power conversion circuit
Second output terminal O2With the first output terminal O of n-th of power conversion circuit1Connection, the second of n-th of power conversion circuit are defeated
Outlet O2For the second end of power cell 100, wherein n is the natural number more than 1.Usual n is much larger than 1.
Different topological structures can be used in power conversion circuit involved by the power cell 100 of embodiment of the present invention,
It is illustrated below using several different topological structures as optional embodiment.However, the invention is not limited in following
The topological structure of act.
Referring to Fig. 7, in some embodiments, each power conversion circuit is H-bridge circuit, H-bridge circuit is included extremely
A few bridge arm, at least a bridge arm include the first bridge arm and the second bridge arm, and each bridge arm includes upper power semiconductor switch under
Power semiconductor switch.In the present embodiment, by taking the 1st power conversion circuit 110-1 as an example, which is H bridges
Circuit, including bridge arm 111a and bridge arm 111b.Bridge arm 111a includes upper power semiconductor switch Q11With lower power semiconductor switch
Q12.Bridge arm 111b includes upper power semiconductor switch Q13With lower power semiconductor switch Q14.Wherein, upper power semiconductor switch
Q11With lower power semiconductor switch Q12Tie point be H-bridge circuit 110-1 the first output terminal O1.Upper power semiconductor switch
Q13With lower power semiconductor switch Q14Tie point be H-bridge circuit 110-1 second output terminal O2。
In the present embodiment, local controller 120 exports 4 control signals, and each H-bridge circuit can correspond to a driving
Circuit 130, driving circuit 130 are coupled with local controller 120, and with upper power semiconductor switch Q11And Q13And lower power
Semiconductor switch Q12And Q14Control terminal be connected, to receive local controller 130 output 4 control signals, and to control
Signal is handled exports into H-bridge circuit power semiconductor switch Q to generate 4 drive signals11And Q13And lower power
Semiconductor switch Q12And Q14Control terminal, to drive upper power semiconductor switch Q11And Q13And lower power semiconductor switch
Q12And Q14On or off.Driving circuit 130 can be directly electrically connected with local controller 120；Magnetic isolation can also be passed through
Device is attached, such as transformer；It can also be connected by light isolation device, such as optocoupler or optical fiber etc..
In the present embodiment, local controller 120 exports 4 control signals, and each H-bridge circuit can correspond to 4 drives
Dynamic circuit, driving circuit are coupled with local controller 120, and with the control terminal of the power semiconductor switch in H-bridge circuit one by one
It is correspondingly connected with, also that is, the quantity of driving circuit is identical with the quantity of power semiconductor switch, to receive a control signal,
And control signal is handled and is exported with generating each drive signal to the control terminal of corresponding power semiconductor switch, it uses
To drive the on or off of the power semiconductor switch.
In the present embodiment, the control signal phase corresponding to the power semiconductor switch of the same position of each H-bridge circuit
Together, for example, by taking the upper power semiconductor switch of the bridge arm 111a of H-bridge circuit as an example, the specifically bridge arm of the 1st H-bridge circuit
The upper power semiconductor switch Q of 111a11, the upper power semiconductor switch Q of the bridge arm 111a of the 2nd H-bridge circuit21, class successively
It pushes away, until the upper power semiconductor switch Q of the bridge arm 111a of n-th of H-bridge circuitn1Corresponding control signal is identical so that upper work(
Rate semiconductor switch Q11、Q21…Qn1It simultaneously turns on or simultaneously turns off.
Referring to Fig. 8, in some embodiments, each power conversion circuit is half-bridge circuit, half-bridge circuit includes
Bridge arm 111, bridge arm 111 include upper power semiconductor switch (such as Q having a first end and a second end11) and lower power semiconductor open
Close (such as Q12), the second end of upper power semiconductor switch and the first end of lower power semiconductor switch are connected to tie point, the company
Contact is the first output terminal O of half-bridge circuit1, the second end of lower power semiconductor switch is the second output terminal O of half-bridge circuit2。
In the present embodiment, the first output terminal of the one of which of two neighboring power conversion circuit and the second output of wherein another one
End is sequentially connected, specifically, the first output terminal O of the 1st half-bridge circuit1For the first end of power cell, the 1st half-bridge electricity
The second output terminal O on road2With the first output terminal O of the 2nd half-bridge circuit1Connection, is sequentially connected down, (n-1)th half-bridge circuit
Second output terminal O2With the first output terminal O of n-th of half-bridge circuit1Connection, the second output terminal O of n-th of half-bridge circuit2For
The second end of power cell.
In the present embodiment, local controller 120 exports 2 control signal (not shown), each to control signal to control
Make the upper power semiconductor switch of corresponding bridge arm and the one of which of lower power semiconductor switch, and each half-bridge circuit can be with
A corresponding driving circuit 130, driving circuit 130 are coupled with local controller 120, and with upper power semiconductor switch Q11And
Lower power semiconductor switch Q12Control terminal be connected, to receive local controller 130 output 2 control signals, and to control
Signal processed is handled exports the upper power semiconductor switch Q into H-bridge circuit to generate 2 drive signals11And lower power
Semiconductor switch Q12Control terminal, to control upper power semiconductor switch Q11And lower power semiconductor switch Q12Conducting
Or shutdown.
In the present embodiment, the control signal phase corresponding to the power semiconductor switch of the same position of each half-bridge circuit
Together, for example, by taking the upper power semiconductor switch of half-bridge circuit as an example, the upper power semiconductor switch Q of the 1st half-bridge circuit11,
The upper power semiconductor switch Q of 2 half-bridge circuits21, and so on until the upper power semiconductor switch of n-th half-bridge circuit
Qn1Corresponding control signal is identical, so that upper power semiconductor switch Q11、Q21Until Qn1It simultaneously turns on or simultaneously turns off.
Referring to Fig. 9, in some embodiments, power conversion circuit is diode clamp tri-level circuit, diode
Clamper tri-level circuit includes an at least bridge arm, and an at least bridge arm includes the first bridge arm 111a and the second bridge arm 111b.First bridge
Arm 111a and the second bridge arm 111b includes the first power semiconductor switch (such as Q11、Q15), the second power semiconductor switch (such as
Q12、Q16), third power semiconductor switch (such as Q13、Q17) and the 4th power semiconductor switch (such as Q14、Q18).Diode clamp
Tri-level circuit further includes the first bus capacitor C1, the second bus capacitor C2, first switch D1, second switch D2, third switch D3
With the 4th switch D4.Wherein the first bus capacitor C1With the second bus capacitor C2It is connected in series with rear and the first bridge arm 111a and second
Bridge arm 111b is connected in parallel.The first power semiconductor switch Q of first bridge arm 111a11, the second power semiconductor switch Q12,
Three power semiconductor switch Q13With the 4th power semiconductor switch Q14It is connected in series with.Second power semiconductor switch Q12And third
Power semiconductor switch Q13Tie point be the first output terminal O1.The first power semiconductor switch Q of second bridge arm 111b15,
Two power semiconductor switch Q16, third power semiconductor switch Q17With the 4th power semiconductor switch Q18It is connected in series with.Second work(
Rate semiconductor switch Q16With third power semiconductor switch Q17Tie point be second output terminal O2.First switch D1It is opened with second
Close D2The first power semiconductor switch Q of the first bridge arm 111a is connected to after series connection11With the second power semiconductor switch Q12Company
Contact and third power semiconductor switch Q13With the 4th power semiconductor switch Q14Tie point between.Third switchs D3With the 4th
Switch D4The first power semiconductor switch Q of the second bridge arm 111b is connected to after series connection16With the second power semiconductor switch Q17's
Tie point and third power semiconductor switch Q17With the 4th power semiconductor switch Q18Tie point between.First switch D1With
Two switch D2Tie point and the first bus capacitor C1With the second bus capacitor C2Tie point connection.Third switchs D3With the 4th
Switch D4Tie point and the first bus capacitor C1With the second bus capacitor C2Tie point connection.In the present embodiment, it first opens
Close D1With second switch D2For clamp diode, the first power semiconductor switch, the second power semiconductor switch, third power half
Conductor switchs and the 4th power semiconductor switch is IGBT or IGCT etc..
In the present embodiment, the first output terminal of the one of which of two neighboring power conversion circuit and wherein another one
Second output terminal is sequentially connected, specifically, the first output terminal O of the 1st diode clamp tri-level circuit1For power cell
First end, the second output terminal O of the 1st diode clamp tri-level circuit2With the 2nd diode clamp tri-level circuit
First output terminal O1Connection, is sequentially connected down, the second output terminal O of (n-1)th diode clamp tri-level circuit2With n-th
First output terminal O of diode clamp tri-level circuit1Connection, the second output terminal O of n-th of diode clamp tri-level circuit2
Second end for power cell.
In the present embodiment, local controller exports 8 control signals, each to control signal to control corresponding first
Power semiconductor switch (such as Q11、Q15), the second power semiconductor switch (such as Q12、Q16), third power semiconductor switch (such as
Q13、Q17) and the 4th power semiconductor switch (such as Q14、Q18) one of which.The identical bits of each diode clamp tri-level circuit
Control signal corresponding to the power semiconductor switch put is identical, for example, the first power with diode clamp tri-level circuit
For semiconductor switch, the first power semiconductor switch Q of the 1st diode clamp tri-level circuit11, the 2nd diode clamp
First power semiconductor switch Q of position tri-level circuit21, and so on until the of n-th diode clamp tri-level circuit
One power semiconductor switch Qn1Corresponding control signal is identical, so that the first power semiconductor switch Q11、Q21Until Qn1Together
When be connected or simultaneously turn off.
Referring to Fig. 10, in some embodiments, power conversion circuit 110 is striding capacitance tri-level circuit.Fly across
Capacitance tri-level circuit includes an at least bridge arm, and an at least bridge arm includes the first bridge arm 111a and the second bridge arm 111b.First bridge
Arm 111a and the second bridge arm 111b includes the first power semiconductor switch (Q11、Q15), the second power semiconductor switch (Q12、
Q16), third power semiconductor switch (Q13、Q17) and the 4th power semiconductor switch (Q14、Q18).Striding capacitance tri-level circuit
Further include the first bus capacitor C1, the second bus capacitor C2, the first capacitance C3With the second capacitance C4.Wherein the first bus capacitor C1With
Second bus capacitor C2It is connected in parallel after being connected in series with the first bridge arm 111a and the second bridge arm 111b.The of first bridge arm 111a
One power semiconductor switch Q11, the second power semiconductor switch Q12, third power semiconductor switch Q13With the 4th power semiconductor
Switch Q14It is connected in series with.Second power semiconductor switch Q12With third power semiconductor switch Q13Tie point for first output
Hold O1.The first power semiconductor switch Q of second bridge arm 111b15, the second power semiconductor switch Q16, third power semiconductor opens
Close Q17With the 4th power semiconductor switch Q18It is connected in series with.Second power semiconductor switch Q16With third power semiconductor switch
Q17Tie point be second output terminal O2.First capacitance C3It is connected to the first power semiconductor switch Q of the first bridge arm 111a11With
Second power semiconductor switch Q12Tie point and the first bridge arm 111a third power semiconductor switch Q13With the 4th power half
Conductor switchs Q14Tie point between.Second capacitance C4It is connected to the first power semiconductor switch Q of the second bridge arm 111b15With
Two power semiconductor switch Q16Tie point and the second bridge arm 111b third power semiconductor switch Q17It is partly led with the 4th power
Body switchs Q18Tie point between.
In the present embodiment, the first output terminal of the one of which of two neighboring power conversion circuit and wherein another one
Second output terminal is sequentially connected, specifically, the first output terminal O of the 1st striding capacitance tri-level circuit1For power cell
First end, the second output terminal O of the 1st striding capacitance tri-level circuit2It is defeated with the first of the 2nd striding capacitance tri-level circuit
Outlet O1Connection, is sequentially connected down, the second output terminal O of (n-1)th striding capacitance tri-level circuit2With n-th of striding capacitance
First output terminal O of tri-level circuit1Connection, the second output terminal O of n-th of striding capacitance tri-level circuit2For power cell
Second end.
In the present embodiment, local controller exports 8 control signals, each to control signal to control corresponding first
Power semiconductor switch (such as Q11、Q15), the second power semiconductor switch (such as Q12、Q16), third power semiconductor switch (such as
Q13、Q17) and the 4th power semiconductor switch (such as Q14、Q18) one of which.The same position of each striding capacitance tri-level circuit
Power semiconductor switch corresponding to control signal it is identical, for example, the first power with striding capacitance tri-level circuit is partly led
For body switch, the first power semiconductor switch Q of the 1st striding capacitance tri-level circuit11, the 2nd three level of striding capacitance
First power semiconductor switch Q of circuit21, and so on until the first power of n-th of striding capacitance tri-level circuit is partly led
Body switchs Qn1Corresponding control signal is identical, so that the first power semiconductor switch Q11、Q21Until Qn1It simultaneously turns on or together
When turn off.
1 is please referred to Fig.1, in some embodiments, power conversion circuit 110 is the controllable tri-level circuit of neutral point.In
Property point controllable tri-level circuit include an at least bridge arm, an at least bridge arm includes the first bridge arm 111a and the second bridge arm 111b.The
One bridge arm 111a and the second bridge arm 111b includes upper power semiconductor switch (such as Q11、Q15) and lower power semiconductor switch is (such as
Q12、Q16).The controllable tri-level circuit of neutral point further includes the first bus capacitor C1, the second bus capacitor C2, first switch group is (such as
Q13、Q14) and second switch group (such as Q17、Q18).Wherein the first bus capacitor C1With the second bus capacitor C2With the after being connected in series with
One bridge arm 111a and the second bridge arm 111b are connected in parallel.The upper power semiconductor switch Q of first bridge arm 111a11It is partly led with lower power
Body switchs Q12Tie point be the first output terminal O1.The upper power semiconductor switch Q of second bridge arm 111b15With lower power semiconductor
Switch Q16Tie point be second output terminal O2.First switch group (such as Q13、Q14) it is connected to the upper power half of the first bridge arm 111a
Conductor switchs Q11With lower power semiconductor switch Q12Tie point and the first bus capacitor C1With the second bus capacitor C2Connection
Between point.Second switch group (such as Q17、Q18) it is connected to the upper power semiconductor switch Q of the second bridge arm 111b15It is partly led with lower power
Body switchs Q16Tie point and the first bus capacitor C1With the second bus capacitor C2Tie point between.In the present embodiment,
One switching group is to be connected in series by two power semiconductor switch, wherein, which controllably opens to be two-way
It closes.
In the present embodiment, the first output terminal of the one of which of two neighboring power conversion circuit and wherein another one
Second output terminal is sequentially connected, specifically, the first output terminal O of the 1st controllable tri-level circuit of neutral point1For power cell
First end, the second output terminal O of the 1st controllable tri-level circuit of neutral point2With the 2nd controllable tri-level circuit of neutral point
First output terminal O1Connection, is sequentially connected down, the second output terminal O of (n-1)th controllable tri-level circuit of neutral point2With n-th
First output terminal O of the controllable tri-level circuit of neutral point1Connection, the second output terminal O of the controllable tri-level circuit of n-th of neutral point2
Second end for power cell.
In the present embodiment, local controller exports 8 control signals, each to control signal to control corresponding upper work(
Rate semiconductor switch (such as Q11、Q15), lower power semiconductor switch (such as Q12、Q16), first switch group (such as Q13、Q14) and second open
Pass group (such as Q17、Q18) one of which.The power semiconductor switch institute of the same position of the controllable tri-level circuit of each neutral point is right
The control signal answered is identical, for example, by taking the first power semiconductor switch of the controllable tri-level circuit of neutral point as an example, in the 1st
First power semiconductor switch Q of the property controllable tri-level circuit of point11, the 2nd controllable tri-level circuit of neutral point the first power
Semiconductor switch Q21, and so on until the controllable tri-level circuit of n-th of neutral point the first power semiconductor switch Qn1Institute is right
The control signal answered is identical, so that the first power semiconductor switch Q11、Q21Until Qn1It simultaneously turns on or simultaneously turns off.
2 are please referred to Fig.1, the present invention also provides a kind of Technics of Power Electronic Conversion devices 500, may include：
Master controller 300, to export main control signal；And at least one power list according to embodiment of the present invention
Member 100.
Local controller 120 is coupled with master controller 300, for receiving and generating corresponding control according to main control signal
Signal.
In some embodiments, an at least power cell 100 is multiple, wherein the one of two neighboring power cell 100
The second end of person and the first end of the wherein another one of two neighboring power cell 100 are sequentially connected, and each power cell 100
Local controller 120 coupled with master controller 300.
In some embodiments, local controller 120 is connect with master controller 300 by optical fiber 310；Or local control
Device 120 processed is directly electrically connected with master controller 300.
Each power cell 100 is equivalent in the first scheme of the prior art and only includes a power conversion circuit 110,
Since each power cell 100 corresponds to a unjacketed optical fiber, accessory power supply 150 and control panel etc., and power conversion circuit is more.Cause
This, compared to the first scheme of the prior art, the power cell 100 of embodiment of the present invention includes multiple power conversion circuits
110, higher voltage can be shared, therefore, the quantity of power cell 100 also can be less, so as to reduce optical fiber, accessory power supply
150 and the quantity of 120 grade of local controller, circuit structure is simplified, improves system reliability.
The second scheme of the prior art is so as to reduce the number of cascade power cell 100 using high voltage power device
Amount, and high voltage power device cost is higher.It is equally real that low voltage power devices can be used in the power cell 100 of embodiment of the present invention
The purpose of 100 quantity of power cell is now reduced, and compared to the second scheme of the prior art, present invention saves costs.
The third scheme of the prior art is to be connected in series with to be equivalent to high pressure by multiple identical power semiconductor switch
Power device need to be that voltage clamp circuit is configured in each power semiconductor switch in this way to prevent voltage un-balance.And the present invention is implemented
The power cell 100 of mode only needs that voltage clamp circuit is configured for each power conversion circuit 110, so as to reduce voltage
The quantity of clamp circuit reduces cost, improves system reliability.
It is particularly shown and described exemplary embodiments of the present invention above.It should be appreciated that the present invention is unlimited
In detailed construction described herein, set-up mode or implementation method；On the contrary, it is intended to cover included in appended claims
Spirit and scope in various modifications and equivalence setting.
Claims (15)
1. a kind of power cell, which is characterized in that including：
Multiple power conversion circuits, each power conversion circuit include at least one bridge with multiple power semiconductor switch
Arm, and each power conversion circuit includes the first output terminal and second output terminal, wherein phase in the multiple translation circuit
First output terminal of the one of which of adjacent two power conversion circuits and the second output terminal of wherein another one
It is sequentially connected, remaining two the first output terminals and second output terminal form the first end and second end of the power cell；
Local controller, to export multiple control signal；And
Multiple driving circuits are coupled with the local controller, to receive the multiple control signal, and according to the multiple
Control signal exports each drive signal respectively, to drive the on or off of the multiple power semiconductor switch,
Wherein the multiple power conversion circuit is identical, and the quantity of the multiple control signal and each power conversion electricity
The quantity of the power semiconductor switch in road is identical and the multiple power conversion circuit in same position the work(
The control signal corresponding to rate semiconductor switch is identical so that same position is described in the multiple power conversion circuit
Power semiconductor switch is simultaneously turned on or is simultaneously turned off.
2. power cell as described in claim 1, which is characterized in that the power cell further includes：
Accessory power supply is connect with the local controller, to power for the local controller.
3. power cell as described in claim 1, which is characterized in that the quantity of the multiple driving circuit and the power half
The quantity of conductor switch is identical, and each driving circuit drives the turn-on and turn-off of the corresponding power semiconductor switch.
4. power cell as described in claim 1, which is characterized in that the multiple driving circuit and the local controller are straight
Either the multiple driving circuit is connect in succession to connect by Magnetic isolation device with the local controller or the multiple drive
Dynamic circuit is connect with the local controller by light isolation device.
5. power cell as described in claim 1, which is characterized in that the power conversion circuit includes：
Bus capacitor and voltage clamp circuit, the both ends of the bus capacitor are connected in the both ends of the bridge arm in parallel, and described
Voltage clamp circuit is connected in parallel in the both ends of the bus capacitor.
6. power cell as claimed in claim 5, which is characterized in that the busbar voltage quilt between the both ends of the bus capacitor
The voltage clamp circuit clamper is in a preset range.
7. power cell as described in claim 1, which is characterized in that the multiple power conversion circuit is the n power
Translation circuit, first output terminal of the 1st power conversion circuit are the first end of the power cell, the 1st
The second output terminal of a power conversion circuit and first output terminal of the 2nd power conversion circuit connect
It connects, is sequentially connected down, until the second output terminal and n-th of the power of (n-1)th power conversion circuit become
First output terminal connection of circuit is changed, the second output terminal of n-th of power conversion circuit is the power list
The second end of member, wherein n are the natural number more than 1.
8. power cell as claimed in claim 7, which is characterized in that the power conversion circuit is H-bridge circuit, wherein described
H-bridge circuit includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and described the
Two bridge arms include upper power semiconductor switch and lower power semiconductor switch, the upper power semiconductor of first bridge arm
First output terminal of the tie point of switch and the lower power semiconductor switch for the power conversion circuit, described second
The upper power semiconductor switch of bridge arm and the tie point of the lower power semiconductor switch are the power conversion circuit
The second output terminal.
9. power cell as claimed in claim 7, which is characterized in that the power conversion circuit is half-bridge circuit, described half
Bridge circuit includes the bridge arm, wherein the bridge arm includes：The upper power semiconductor switch having a first end and a second end is under
Power semiconductor switch, described the of the second end of the upper power semiconductor switch and the lower power semiconductor switch
One end is connected to a tie point, which is first output terminal of the power conversion circuit, and the lower power is partly led
The second end of body switch is the second output terminal of the power conversion circuit.
10. power cell as claimed in claim 7, which is characterized in that the power conversion circuit is three electricity of diode clamp
Ordinary telegram road, wherein the diode clamp tri-level circuit includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and described the
Two bridge arms include respective first power semiconductor switch, the second power semiconductor switch, third power semiconductor switch and
4th power semiconductor switch, wherein first power semiconductor switch of first bridge arm, second power are partly led
Body switch, the third power semiconductor switch and the 4th power semiconductor switch are connected in series with, first bridge arm
Institute of the tie point of second power semiconductor switch and the third power semiconductor switch for the power conversion circuit
State the first output terminal, it is first power semiconductor switch of second bridge arm, second power semiconductor switch, described
Third power semiconductor switch and the 4th power semiconductor switch are connected in series with, second power of second bridge arm
The tie point of semiconductor switch and the third power semiconductor switch is the second output terminal of the power conversion circuit；
First bus capacitor, the second bus capacitor, wherein first bus capacitor and second bus capacitor are connected in series with
It is connected in parallel afterwards with first bridge arm and second bridge arm；And
First switch, second switch, third switch and the 4th switch, wherein after the first switch and second switch series connection
Be connected to first bridge arm first power semiconductor switch and second power semiconductor switch tie point and
It is described between the third power semiconductor switch of first bridge arm and the tie point of the 4th power semiconductor switch
Third switch and the described 4th switch series connection after be connected to first power semiconductor switch of second bridge arm and described
The third power semiconductor switch and the 4th work(of the tie point of second power semiconductor switch and second bridge arm
Between the tie point of rate semiconductor switch, the tie point of the first switch and the second switch and first bus capacitor
It is connected with the tie point of second bus capacitor, tie point and the described first mother of the third switch and the 4th switch
Line capacitance is connected with the tie point of second bus capacitor.
11. power cell as claimed in claim 7, which is characterized in that the power conversion circuit is three level of striding capacitance
Circuit, wherein the striding capacitance tri-level circuit includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and described the
Two bridge arms include respective first power semiconductor switch, the second power semiconductor switch, third power semiconductor switch and
4th power semiconductor switch, wherein first power semiconductor switch of first bridge arm, second power are partly led
Body switch, the third power semiconductor switch and the 4th power semiconductor switch are connected in series with, first bridge arm
Institute of the tie point of second power semiconductor switch and the third power semiconductor switch for the power conversion circuit
State the first output terminal, it is first power semiconductor switch of second bridge arm, second power semiconductor switch, described
Third power semiconductor switch and the 4th power semiconductor switch are connected in series with, second power of second bridge arm
The tie point of semiconductor switch and the third power semiconductor switch is the second output terminal of the power conversion circuit；
First bus capacitor, the second bus capacitor, wherein first bus capacitor and second bus capacitor are connected in series with
It is connected in parallel afterwards with first bridge arm and second bridge arm；And
First capacitance and the second capacitance, wherein first power semiconductor of first capacitance connection in first bridge arm
Switch and second power semiconductor switch tie point and first bridge arm the third power semiconductor switch and
Between the tie point of 4th power semiconductor switch, second capacitance connection is in first work(of second bridge arm
The third power of the tie point and second bridge arm of rate semiconductor switch and second power semiconductor switch is partly led
Body is switched between the tie point of the 4th power semiconductor switch.
12. power cell as claimed in claim 7, which is characterized in that the power conversion circuit is controllable three electricity of neutral point
Ordinary telegram road, wherein the controllable tri-level circuit of the neutral point includes：
An at least bridge arm, an at least bridge arm include the first bridge arm and the second bridge arm, first bridge arm and described the
Two bridge arms include respective upper power semiconductor switch and lower power semiconductor switch, wherein first bridge arm it is described on
First output of the tie point of power semiconductor switch and the lower power semiconductor switch for the power conversion circuit
End, the upper power semiconductor switch of second bridge arm and the tie point of the lower power semiconductor switch are the power
The second output terminal of translation circuit,
First bus capacitor, the second bus capacitor, wherein first bus capacitor and second bus capacitor are connected in series with
It is connected in parallel afterwards with first bridge arm and second bridge arm；And
First switch group and second switch group, wherein the first switch group is connected to the upper power half of first bridge arm
Conductor switchs and the tie point of the lower power semiconductor switch and first bus capacitor and second bus capacitor
Between tie point, the second switch group is connected to the upper power semiconductor switch of second bridge arm and the lower power
Between the tie point of semiconductor switch and the tie point of first bus capacitor and second bus capacitor.
13. a kind of Technics of Power Electronic Conversion device, which is characterized in that including：
Master controller, to export main control signal；And
Power cell described at least just like any one in claim 1-12, the local controller and the master controller
Coupling, to receive the main control signal, to generate the corresponding control signal.
14. Technics of Power Electronic Conversion device as claimed in claim 13, which is characterized in that an at least power cell is more
A, the second end of the one of which of the two neighboring power cell is connect with the first end of wherein another one, and
The local controller of each power cell is coupled with the master controller.
15. Technics of Power Electronic Conversion device as claimed in claim 13, which is characterized in that the local controller and the master control
Device processed is connected by optical fiber or the local controller is directly electrically connected with the master controller.
Priority Applications (22)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/708,323 US10374504B2 (en) | 2016-12-16 | 2017-09-19 | Power unit and power electronic converting device |
| AU2017376697A AU2017376697B2 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| BR112019011177-8A BR112019011177B1 (en) | 2016-12-16 | 2017-12-15 | MODULAR POWER SUPPLY SYSTEM |
| PCT/CN2017/116352 WO2018108141A1 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| TW106144103A TWI675542B (en) | 2016-12-16 | 2017-12-15 | Modular power system |
| US16/464,882 US10924030B2 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| US16/464,733 US11101740B2 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| PCT/CN2017/116351 WO2018108140A1 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| BR112019012080-7A BR112019012080B1 (en) | 2016-12-16 | 2017-12-15 | MODULAR POWER SUPPLY SYSTEM |
| EP17881738.3A EP3557753A4 (en) | 2016-12-16 | 2017-12-15 | Modular power system |
| TW106144106A TWI661634B (en) | 2016-12-16 | 2017-12-15 | Modular power system |
| PCT/CN2017/116353 WO2018108142A1 (en) | 2016-12-16 | 2017-12-15 | Modular power system |
| AU2017376698A AU2017376698B2 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| EP17879984.7A EP3557751A4 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| EP17881249.1A EP3557752A4 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| BR112019012073-4A BR112019012073B1 (en) | 2016-12-16 | 2017-12-15 | MODULAR POWER SUPPLY SYSTEM |
| US16/465,004 US11463016B2 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| AU2017376699A AU2017376699B2 (en) | 2016-12-16 | 2017-12-15 | Modular power system |
| PCT/CN2017/116354 WO2018108143A1 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| US16/465,741 US11183947B2 (en) | 2016-12-16 | 2017-12-15 | Modular power supply system |
| TW106144105A TWI661633B (en) | 2016-12-16 | 2017-12-15 | Modular power system |
| TW106144104A TWI661632B (en) | 2016-12-16 | 2017-12-15 | Modular power system |
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