CN107431467B - Resonance circuit, band elimination filter and band pass filter - Google Patents

Resonance circuit, band elimination filter and band pass filter Download PDF

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Publication number
CN107431467B
CN107431467B CN201680020860.9A CN201680020860A CN107431467B CN 107431467 B CN107431467 B CN 107431467B CN 201680020860 A CN201680020860 A CN 201680020860A CN 107431467 B CN107431467 B CN 107431467B
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inductor
coil conductor
band
port
circuit
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CN107431467A (en
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西田浩
石塚健一
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/09—Filters comprising mutual inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/175—Series LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1758—Series LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1783—Combined LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1791—Combined LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H01F2017/0026—Multilayer LC-filter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H2007/013—Notch or bandstop filters

Abstract

The present invention relates to a resonance circuit, a band elimination filter and a band pass filter including the resonance circuit. The 1 st resonance circuit (101) includes, for example: the 1 st inductor (L1) and the 1 st capacitor (C1) that constitute the 1 st series circuit (SC1), and the 2 nd inductor (L2) that is connected in parallel to the 1 st series circuit (SC1), the 1 st inductor (L1) and the 2 nd inductor (L2) are coupled via a magnetic field in a direction in which magnetic fluxes that pass through the 1 st inductor (L1) and the 2 nd inductor (L2) reinforce each other, and the steepness of the transition band can be effectively improved.

Description

Resonance circuit, band elimination filter and band pass filter
Technical Field
The present invention relates to a resonant circuit including an inductor and a capacitor, and a band elimination filter and a band pass filter including the resonant circuit.
Background
Conventionally, a band-stop filter and a band-pass filter provided in a high-frequency circuit are provided with an LC parallel resonant circuit. For example, as shown in fig. 14, a band elimination filter is configured by an LC parallel circuit connected in series to a signal path and an LC series circuit connected in shunt between the signal path and a ground. As shown in fig. 15, the band pass filter is configured by an LC series circuit connected in series to the signal path and an LC parallel circuit connected in shunt between the signal path and the ground.
The band elimination filter shown in fig. 14 is shown in patent document 1, for example. The bandpass filter shown in fig. 15 is shown in patent document 2, for example.
Prior art documents
Patent document
Patent document 1: JP-A-2004-343696
Patent document 2: JP-A63-18709
Disclosure of Invention
Problems to be solved by the invention
In general, in a band-stop filter or a band-pass filter, when sharpness is required for a transition band between a stop band end and a pass band end, it is effective to increase the number of elements connected in series and the number of elements connected in shunt, but there is a problem that insertion loss increases as a result.
As shown in fig. 14 and 15, in the filter including the LC resonant circuit, the steepness of the transition band can be improved by increasing the Q value of the LC resonant circuit. However, the dc resistance (DCR) of the inductor and the Equivalent Series Resistance (ESR) of the capacitor are determined by the structure and the conductive material, and the Q value of the LC resonant circuit cannot be effectively increased.
The invention aims to provide a resonant circuit, a band elimination filter and a band-pass filter, which can effectively improve the steepness of a transition frequency band.
Means for solving the problem
(1) The resonance circuit of the present invention is characterized by comprising:
a 1 st inductor and a 1 st capacitor constituting a 1 st series circuit, and a 2 nd inductor connected in parallel to the 1 st series circuit,
the 1 st inductor and the 2 nd inductor are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor and the 2 nd inductor mutually reinforce.
With the above configuration, the 1 st inductor and the 2 nd inductor have large effective inductances, and therefore, the inductance of the single inductor can be reduced. This reduces the resistance component of the parallel resonant circuit, and improves the Q value thereof.
(2) In the above (1), preferably, the inductance of the 1 st inductor is smaller than the inductance of the 2 nd inductor. This suppresses an increase in the resistance component in the 1 st series circuit, and suppresses attenuation of the signal flowing through the 1 st series circuit.
(3) In the above (1) or (2), it is preferable that the 1 st inductor is formed of a 1 st coil conductor, the 2 nd inductor is formed of a 2 nd coil conductor, the 1 st coil conductor and the 2 nd coil conductor are integrally formed on a multilayer substrate in which a plurality of dielectric layers are laminated, the 1 st coil conductor and the 2 nd coil conductor have substantially the same inner and outer diameter dimensions, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis. This makes it possible to construct a small-sized resonant circuit having a large mutual inductance due to the coupling between the 1 st inductor and the 2 nd inductor.
(4) The band elimination filter of the present invention has a 1 st port and a 2 nd port, and is characterized by comprising a 1 st resonant circuit in which a 1 st inductor and a 1 st capacitor constituting a 1 st series circuit and a 2 nd inductor connected in parallel to the 1 st series circuit are connected between the 1 st port and the 2 nd port, and the 1 st inductor and the 2 nd inductor are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor and the 2 nd inductor reinforce each other.
With the above configuration, the 1 st inductor and the 2 nd inductor have large effective inductances, and therefore, the inductance of the inductors alone can be reduced, whereby the resistance component of the parallel resonant circuit is reduced, and the Q value thereof is improved. Therefore, steepness of the transition band between the band stop end and the band pass end is improved.
(5) In the above (4), preferably, the inductance of the 1 st inductor is smaller than the inductance of the 2 nd inductor. This suppresses an increase in the resistance component in the 1 st series circuit, and suppresses attenuation of the signal flowing through the 1 st series circuit. That is, an increase in insertion loss in the pass band based on the setting of the 1 st inductor is suppressed.
(6) In the above (4) or (5), it is preferable that the power supply further includes a 2 nd resonance circuit including a 3 rd inductor connected between the 1 st port and the ground. This ensures a wide bandwidth.
(7) In the above (6), preferably, the 1 st inductor and the 2 nd inductor are coupled to the 3 rd inductor. This reduces the resistance component of the resonant circuit, improves the Q value, and improves the steepness of the transition band between the passband end and the stopband end.
(8) In any one of the above (4) to (7), it is preferable that the 1 st inductor is formed of a 1 st coil conductor, the 2 nd inductor is formed of a 2 nd coil conductor, the 1 st coil conductor and the 2 nd coil conductor are integrally formed on a multilayer substrate in which a plurality of dielectric layers are laminated, the 1 st coil conductor and the 2 nd coil conductor have substantially the same inner and outer diameter dimensions, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis. This increases the effective inductance of the 1 st inductor and the 2 nd inductor, and improves the effect of improving the steepness of the transition band.
(9) The bandpass filter of the present invention has a 1 st port and a 2 nd port, and is characterized by comprising a 3 rd resonant circuit, wherein the 3 rd resonant circuit has a 1 st inductor and a 1 st capacitor constituting a 1 st series circuit, and a 2 nd inductor connected in parallel to the 1 st series circuit, connected between the 1 st port and ground, and the 1 st inductor and the 2 nd inductor are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor and the 2 nd inductor reinforce each other.
With the above configuration, the 1 st inductor and the 2 nd inductor have large effective inductances, and therefore, the inductance of the inductors alone can be reduced, whereby the resistance component of the parallel resonant circuit is reduced, and the Q value thereof is improved. Therefore, steepness of the transition band between the band stop end and the band pass end is improved.
(10) In the above (9), preferably, the inductance of the 1 st inductor is smaller than the inductance of the 2 nd inductor. Thereby, an increase in the resistance component in the 1 st series circuit is suppressed. That is, the decrease in the attenuation amount in the attenuation region based on the setting of the 1 st inductor is suppressed.
(11) In the above (10), it is preferable that the power supply further includes a 4 th resonant circuit including a 4 th inductor connected between the 1 st port and the 2 nd port. This ensures a wide bandwidth.
(12) In the above (11), preferably, the 1 st inductor and the 2 nd inductor are coupled to the 4 th inductor. This reduces the resistance component of the resonant circuit, improves the Q value, and improves the steepness of the transition band between the passband end and the stopband end.
(13) In any one of the above (9) to (12), it is preferable that the 1 st inductor is formed of a 1 st coil conductor, the 2 nd inductor is formed of a 2 nd coil conductor, the 1 st coil conductor and the 2 nd coil conductor are integrally formed on a multilayer substrate in which a plurality of dielectric layers are laminated, the 1 st coil conductor and the 2 nd coil conductor have substantially the same inner and outer diameter dimensions, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis. This increases the effective inductance of the 1 st inductor and the 2 nd inductor, and improves the effect of improving the steepness of the transition band.
Effect of invention
According to the invention, a resonant circuit with a high Q value, and a band-stop filter or a band-pass filter with a high steepness of a transition band between a band-stop end and a band-pass end can be obtained.
Drawings
Fig. 1(a) is a circuit diagram of a resonant circuit 110 according to embodiment 1. Fig. 1(B) is an equivalent circuit diagram of the resonance circuit 110.
Fig. 2 is a sectional view of a main part of the resonance circuit 110.
Fig. 3 is a circuit diagram of the band elimination filter 121 according to embodiment 2.
Fig. 4(a) is a diagram showing the transmission characteristic and the reflection characteristic of the band elimination filter 121. Fig. 4(B) is a diagram in which the transition band from the stop band to the pass band of fig. 4(a) is enlarged.
Fig. 5 is an external perspective view of the band elimination filter 121 according to the present embodiment.
Fig. 6 is a circuit diagram of another band elimination filter 122 of the present embodiment.
Fig. 7 is a circuit diagram of another band elimination filter 123 of the present embodiment.
Fig. 8(a) and (B) are circuit diagrams of band elimination filters 124 and 125 according to the present embodiment.
Fig. 9 is a circuit diagram of bandpass filter 131 according to embodiment 3.
Fig. 10(a) is a diagram showing the pass characteristic and the reflection characteristic of the band-pass filter 131. Fig. 10(B) is a diagram in which the transition band from the stop band to the pass band in fig. 10(a) is enlarged.
Fig. 11 is a circuit diagram of another bandpass filter 132 according to the present embodiment.
Fig. 12 is a circuit diagram of another band-pass filter 133 according to the present embodiment.
Fig. 13(a) and (B) are circuit diagrams of band- pass filters 134 and 135 according to the present embodiment.
Fig. 14 is a circuit diagram showing an example of a conventional band elimination filter.
Fig. 15 is a circuit diagram showing an example of a conventional bandpass filter.
Detailed Description
Hereinafter, a plurality of embodiments will be described by referring to the drawings by way of a few specific examples. The same reference numerals are assigned to the same positions in the drawings. In view of the ease of explanation and understanding of the points, the embodiments are shown for convenience, but partial replacement or combination of the configurations shown in different embodiments is possible. In embodiment 2, the description of the items common to embodiment 1 will be omitted, and only the differences will be described. In particular, the same operational effects based on the same configuration are not mentioned one by one in each embodiment.
EXAMPLE 1 embodiment
In embodiment 1, a resonant circuit is shown.
Fig. 1(a) is a circuit diagram of a resonant circuit 110 according to embodiment 1. The resonance circuit 110 includes: the 1 st inductor L1 and the 1 st capacitor C1 constituting the 1 st series circuit SC1, and the 2 nd inductor L2 connected in parallel to the 1 st series circuit SC1. The parallel-connected circuit is connected between the port P1 and the port P2.
The 1 st inductor L1 and the 2 nd inductor L2 are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor L1 and the 2 nd inductor L2 strengthen each other. Therefore, as shown in fig. 1(a), a mutual inductance M based on the coupling of the 1 st inductor L1 and the 2 nd inductor L2 is generated.
Fig. 1(B) is an equivalent circuit diagram of the resonance circuit 110. In fig. 1(B), the inductors L1 ', L2', Lm are inductors obtained by equivalently transforming the 1 st inductor L1, the 2 nd inductor L2, and the mutual inductance M shown in fig. 1(a) into a T-shaped circuit. Here, when the inductance of the 1 st inductor L1 is represented by L1, the inductance of the 2 nd inductor L2 is represented by L2, and the mutual inductance is represented by M, the inductance of the inductor L1 'is (L1+ M), the inductance of the inductor L2' is (L2+ M), and the inductance of the inductor Lm is (-M). Thus, the coupling of the 1 st inductor L1 and the 2 nd inductor L2 increases the effective inductance of the 1 st inductor L1 and the 2 nd inductor L2. Therefore, the inductance of the single 1 st inductor L1 and the single 2 nd inductor L2 can be reduced. As a result, the resistance component (dc resistance DCR) decreases, the resistance component of the parallel resonant circuit decreases, and the Q value thereof increases.
Further, since the 1 st inductor L1 is connected in series to the 1 st capacitor C1, the reactance change amount with respect to the frequency of the 1 st series circuit SC1 increases, and therefore the value of the 1 st capacitor C1 can be reduced, which is advantageous in that the manufacturing becomes easy when the integrated circuit is formed by a laminated structure. That is, the reactance of the 1 st capacitor C1 section is represented as-1/ω C, and the reactance in the case of the 1 st inductor L1 to which a smaller inductance is added in series is ω L1-1/ω C1, the reactance increases. This is an effect close to the increase in the value of C1 of-1/ω C1 and the increase in reactance. This can reduce the capacitance of the 1 st capacitor C1 almost equivalently to an increase in the substantial capacitance value.
Preferably, the inductance of the 1 st inductor L1 is smaller than the inductance of the 2 nd inductor L2. This suppresses an increase in the resistance component in the 1 st series circuit SC1, and suppresses attenuation of the signal flowing through the 1 st series circuit SC1.
Fig. 2 is a sectional view of a main part of the resonance circuit 110. The 1 st inductor L1 is formed of the 1 st coil conductor 11, and the 2 nd inductor L2 is formed of the 2 nd coil conductor 12. The 1 st coil conductor 11 and the 2 nd coil conductor 12 are each composed of a conductor pattern formed on a plurality of dielectric layers and an interlayer connection conductor. These plural dielectric layers are stacked to constitute the multilayer substrate 50. That is, the 1 st inductor L1 and the 2 nd inductor L2 are integrally formed on the multilayer substrate 50. The 1 st coil conductor 11 and the 2 nd coil conductor 12 are rectangular spiral-shaped. The 1 st coil conductor 11 and the 2 nd coil conductor 12 share the coil axis CA, and the 1 st coil conductor 11 and the 2 nd coil conductor 12 have substantially the same inner and outer diameter dimensions.
Fig. 2 shows the formation regions of the 1 st inductor L1 and the 2 nd inductor L2. One end Tc of the 1 st coil conductor 11 is electrically connected to an electrode of the 1 st capacitor C1. Further, the 1 st terminal T1 of the 2 nd coil conductor 12 is electrically connected to the 1 st port P1, and the 2 nd terminal T2 of the 2 nd coil conductor 12 is electrically connected to the 2 nd port P2.
As described above, since the 1 st coil conductor 11 and the 2 nd coil conductor 12 share the coil axis CA and the 1 st coil conductor 11 and the 2 nd coil conductor 12 have substantially the same inner and outer diameter sizes, a small-sized large resonance circuit can be configured based on the mutual inductance M of the coupling between the 1 st inductor L1 and the 2 nd inductor L2.
The 1 st capacitor C1 may be incorporated in the multilayer substrate 50, or may be mounted (surface-mounted) on the multilayer substrate 50.
EXAMPLE 2 EXAMPLE
In embodiment 2, several examples of band-stop filters are shown.
Fig. 3 is a circuit diagram of the band elimination filter 121 according to embodiment 2. The band elimination filter 121 has a 1 st port P1 and a 2 nd port P2, and includes a 1 st resonant circuit 101 connected between the 1 st port P1 and the 2 nd port P2. Further, the 2 nd resonance circuit 102 is connected between the 1 st port P1 and the ground and is based on a series circuit of a 3 rd inductor L3 and a 2 nd capacitor C2.
The configuration of the 1 st resonant circuit 101 is the same as the resonant circuit 110 shown in embodiment 1.
With the above configuration, the coupling between the 1 st inductor L1 and the 2 nd inductor L2 increases the effective inductance of the 1 st inductor L1 and the 2 nd inductor L2. Therefore, the inductance of the single 1 st inductor L1 and the single 2 nd inductor L2 can be reduced. As a result, the resistance component (dc resistance DCR) decreases, the resistance component of the parallel resonant circuit decreases, and the Q value thereof increases. Therefore, steepness of the transition band between the band stop end and the band pass end is improved.
Further, according to the band elimination filter 121, since the 2 nd resonance circuit based on the series circuit of the 3 rd inductor L3 and the 2 nd capacitor C2 is further provided between the 1 st port P1 and the ground, a wide band elimination width can be secured.
Fig. 4(a) is a diagram showing the transmission characteristic and the reflection characteristic of the band elimination filter 121. Here, S21(E) is a symbol in which the insertion loss of the band elimination filter 121 of the present embodiment is represented by S21 of the S parameter, and S22(E) is a symbol in which the reflection loss of the band elimination filter 121 of the present embodiment is represented by S22 of the S parameter. S21(C) is a symbol indicating the insertion loss of the band elimination filter of the comparative example by S21 of the S parameter, and S22(C) is a symbol indicating the reflection loss of the band elimination filter of the comparative example by S22 of the S parameter.
The values of the elements of the band-stop filter 121 are as follows.
L1：0.8nH
L2：1.1nH
L3：29nH
C1：3.5pF
C2：0.4pF
Coupling coefficient k: 0.8
The band elimination filter of the comparative example was set to L1: 0nH, C1: 10.9 pF.
Fig. 4(B) is a diagram in which the transition band from the stop band to the pass band of fig. 4(a) is enlarged for S21(E) and S21 (C).
The band rejection filter 121 of the present embodiment and the band rejection filter of the comparative example are designed such that the center is 1.5GHz, ± 50MHz is a stopband, and a frequency region separated from the center frequency by 150MHz or more is a passband. Here, the stop band S21 is set to-18 dB or less, and the pass band S21 is designed to be the maximum for comparison.
As can be seen from fig. 4(a) and (B), the band elimination filter 121 of the present embodiment can be regarded as an improvement of S21 of about 0.2dB in the pass band.
Fig. 5 is an external perspective view of the band elimination filter 121 according to the present embodiment. The band rejection filter 121 includes: a 1 st port (terminal) P1, a 2 nd port (terminal) P2, and a ground terminal GND. The 1 st resonance circuit 101 and the 2 nd resonance circuit 102 shown in fig. 3 are integrally provided on the multilayer substrate 50 in which a plurality of dielectric layers are laminated. The 1 st coil conductor and the 2 nd coil conductor have substantially the same inner and outer diameter dimensions, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis. The 3 rd inductor L3 of the 2 nd resonant circuit 102 is also disposed within the multilayer substrate 50. The 1 st capacitor C1 and the 2 nd capacitor C2 are also formed by conductor patterns on the multilayer substrate 50. The 1 st capacitor C1 and the 2 nd capacitor C2 may be mounted (surface-mounted) on the multilayer substrate 50.
Fig. 6 is a circuit diagram of another band elimination filter 122 of the present embodiment. The band elimination filter 122 has a 1 st port P1 and a 2 nd port P2, and includes a 1 st resonant circuit 101 and a 2 nd resonant circuit 102. Unlike the band reject filter 121 shown in fig. 3, the 3 rd inductor L3 is coupled to the 1 st inductor L1 and the 2 nd inductor L2. This reduces the resistance component of the resonant circuit, improves the Q value, and improves the steepness of the transition band between the passband end and the stopband end.
Fig. 7 is a circuit diagram of another band elimination filter 123 of the present embodiment. The band elimination filter 123 has a 1 st port P1 and a 2 nd port P2, and includes a 1 st resonant circuit 101 connected in series. The configuration of the 1 st resonant circuit 101 is the same as the resonant circuit 110 shown in embodiment 1. In the case where the stop band width is narrow, the band stop filter may be constituted by only the 1-stage LC parallel resonant circuit.
Fig. 8(a) and (B) are circuit diagrams of band elimination filters 124 and 125 according to the present embodiment. The band elimination filter 124 has a 1 st port P1 and a 2 nd port P2, and 1 st resonance circuit 101 and 2 nd resonance circuits 102A, 102B are pi-connected. Further, the band elimination filter 125 has a 1 st port P1 and a 2 nd port P2, and 21 st resonance circuits 101A, 101B and 12 nd resonance circuit 102 are T-connected.
As long as the insertion loss in the pass band is within the allowable value, 3 or more resonant circuits may be connected in multiple stages.
EXAMPLE 3
In embodiment 3, several examples of the band pass filter are shown.
Fig. 9 is a circuit diagram of bandpass filter 131 according to embodiment 3. The band-pass filter 131 has a 1 st port P1 and a 2 nd port P2, and includes: a 3 rd resonant circuit 103 connected in shunt to the 1 st port P1, and a 4 th resonant circuit 104 connected in series between the 1 st port 13P1 and the 2 nd port P2.
The configuration of the 3 rd resonant circuit 103 is the same as the resonant circuit 110 shown in embodiment 1. The 4 th resonance circuit 104 is constituted by a series circuit of a 4 th inductor L4 and a 3 rd capacitor C3.
Fig. 10(a) is a diagram showing the pass characteristic and the reflection characteristic of the band-pass filter 131. Here, S21(E) is a symbol in which the insertion loss of the band pass filter 131 of the present embodiment is represented by S21 of the S parameter, and S22(E) is a symbol in which the reflection loss of the band pass filter 131 of the present embodiment is represented by S22 of the S parameter. S21(C) is a symbol indicating the insertion loss of the bandpass filter of the comparative example by S21 of the S parameter, and S22(C) is a symbol indicating the reflection loss of the bandpass filter of the comparative example by S22 of the S parameter.
The values of the elements of the band-pass filter 131 are as follows.
L1：1.2nH
L2：0.6nH
L4：40nH
C1：0.3pF
C3：5.2pF
Coupling coefficient k: 0.8
The bandpass filter of the comparative example was set to L1: 0nH, C3: 18.8 pF.
Fig. 10(B) is a diagram in which the transition band from the stop band to the pass band of fig. 10(a) is enlarged for S21(E) and S21 (C).
Both the bandpass filter 131 of the present embodiment and the bandpass filter of the comparative example are designed such that a passband is set to ± 50MHz with respect to 1.5GHz as a center, and a stopband is set to a frequency region separated from the center frequency by 150MHz or more. Here, the stop band S21 is set to-10 dB or less, and the pass band S21 is designed to be the maximum for comparison.
As can be seen from fig. 10(a) and (B), the bandpass filter 131 of the present embodiment can achieve an improvement in S21 of about 0.4dB in the passband.
Fig. 11 is a circuit diagram of another bandpass filter 132 according to the present embodiment. The band-pass filter 132 has a 1 st port P1 and a 2 nd port P2, and includes a 3 rd resonant circuit 103 and a 4 th resonant circuit 104. Unlike the band pass filter 131 shown in fig. 9, the 4 th inductor L4 is coupled to the 1 st inductor L1 and the 2 nd inductor L2. This reduces the resistance component of the resonant circuit, improves the Q value, and improves the steepness of the transition band between the passband end and the stopband end.
Fig. 12 is a circuit diagram of another band-pass filter 133 according to the present embodiment. The band-pass filter 133 has a 1 st port P1 and a 2 nd port P2, and includes a 3 rd resonant circuit 103 connected in shunt. The configuration of the 3 rd resonant circuit 103 is the same as the resonant circuit 110 shown in embodiment 1. When the pass band is narrow, the pass band filter may be constituted by only the 1-stage LC parallel resonant circuit.
Fig. 13(a) and (B) are circuit diagrams of the band- pass filters 134 and 135 according to the present embodiment. The band-pass filter 134 has a 1 st port P1 and a 2 nd port P2, and 2 rd 3 rd resonance circuits 103A, 103B and 1 th 4 th resonance circuit 104 are pi-connected. Further, the band-pass filter 135 has a 1 st port P1 and a 2 nd port P2, and 1 rd 3 rd resonance circuit 103 and 2 th 4 th resonance circuits 104A, 104B are T-connected.
As long as the insertion loss in the pass band is within the allowable value, 3 or more resonant circuits may be connected in multiple stages.
In the embodiments described above, the 1 st capacitor C1, the 2 nd capacitor C2, and the 3 rd capacitor C3 are integrally provided inside and outside the multilayer substrate, and may be mounted on a printed wiring board as separate components.
Finally, the above description of the embodiments is by way of example in all respects and not by way of limitation. The present invention can be modified and changed as appropriate by those skilled in the art. For example, partial replacement or combination of the configurations shown in the different embodiments can be performed. The scope of the present invention is not shown by the above embodiments but by the claims. Further, the scope of the present invention is intended to include all modifications within the meaning and range equivalent to the claims.
-description of symbols-
C1
C2.. 2 nd capacitor
C3.. 3 rd capacitor
CA.. coil shaft
GND
1 st inductor
L2
3 rd inductor
4 th inductor
1 st port
P2
1 st series circuit
1 st coil conductor
12.. 2 nd coil conductor
A multilayer substrate
101. 101A, 101b
102. 102A, 102b
103. 103A, 103b
104. 104A, 104b
A resonant circuit
121-125
131-135

Claims (7)

1. A resonance circuit is characterized by comprising:
a 1 st inductor and a 1 st capacitor constituting a 1 st series circuit, and a 2 nd inductor connected in parallel to the 1 st series circuit,
the 1 st inductor and the 2 nd inductor are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor and the 2 nd inductor mutually reinforce,
the inductance of the 1 st inductor is smaller than the inductance of the 2 nd inductor,
the 1 st inductor is composed of a 1 st coil conductor, the 2 nd inductor is composed of a 2 nd coil conductor,
the 1 st coil conductor and the 2 nd coil conductor are integrally formed on a multilayer substrate in which a plurality of dielectric layers are laminated, the 1 st coil conductor and the 2 nd coil conductor have the same inner and outer diameter, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis.
2. A band-stop filter is characterized in that,
having a 1 st port and a 2 nd port,
the device includes a 1 st resonant circuit, wherein a 1 st inductor and a 1 st capacitor constituting a 1 st series circuit and a 2 nd inductor connected in parallel to the 1 st series circuit are connected between the 1 st port and the 2 nd port in the 1 st resonant circuit,
the 1 st inductor and the 2 nd inductor are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor and the 2 nd inductor mutually reinforce,
the inductance of the 1 st inductor is smaller than the inductance of the 2 nd inductor,
the 1 st inductor is composed of a 1 st coil conductor, the 2 nd inductor is composed of a 2 nd coil conductor,
the 1 st coil conductor and the 2 nd coil conductor are integrally formed on a multilayer substrate in which a plurality of dielectric layers are laminated, the 1 st coil conductor and the 2 nd coil conductor have the same inner and outer diameter, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis.
3. The band-stop filter of claim 2,
the device also comprises a 2 nd resonance circuit which is connected between the 1 st port and the ground and comprises a 3 rd inductor.
4. The band reject filter of claim 3,
the 1 st inductor and the 2 nd inductor are coupled to each other with the 3 rd inductor.
5. A band-pass filter, characterized in that,
having a 1 st port and a 2 nd port,
a 3 rd resonant circuit, wherein a 1 st inductor and a 1 st capacitor constituting a 1 st series circuit and a 2 nd inductor connected in parallel to the 1 st series circuit are connected between the 1 st port and a ground in the 3 rd resonant circuit,
the 1 st inductor and the 2 nd inductor are coupled via a magnetic field in a direction in which magnetic fluxes passing through the 1 st inductor and the 2 nd inductor mutually reinforce,
the inductance of the 1 st inductor is smaller than the inductance of the 2 nd inductor,
the 1 st inductor is composed of a 1 st coil conductor, the 2 nd inductor is composed of a 2 nd coil conductor,
the 1 st coil conductor and the 2 nd coil conductor are integrally formed on a multilayer substrate in which a plurality of dielectric layers are laminated, the 1 st coil conductor and the 2 nd coil conductor have the same inner and outer diameter, and the 1 st coil conductor and the 2 nd coil conductor share a coil axis.
6. The bandpass filter according to claim 5,
the device further comprises a 4 th resonant circuit connected between the 1 st port and the 2 nd port and including a 4 th inductor.
7. The bandpass filter according to claim 6,
the 1 st inductor and the 2 nd inductor are mutually coupled with the 4 th inductor.
CN201680020860.9A 2015-04-17 2016-04-07 Resonance circuit, band elimination filter and band pass filter Active CN107431467B (en)

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CN107431467A (en) 2017-12-01
JPWO2016167171A1 (en) 2017-12-28

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