CN107302319A - Single-phase sinewave inverter and its control method - Google Patents
Single-phase sinewave inverter and its control method Download PDFInfo
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- CN107302319A CN107302319A CN201710447963.XA CN201710447963A CN107302319A CN 107302319 A CN107302319 A CN 107302319A CN 201710447963 A CN201710447963 A CN 201710447963A CN 107302319 A CN107302319 A CN 107302319A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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Abstract
The invention discloses a kind of single-phase sinewave inverter and its control method, single-phase sinewave inverter includes：Boost control circuit, it is connected with input direct voltage, for the voltage for needed for the meeting semisinusoidal steamed bun waveform of output voltage volt value that input direct voltage boosts, wherein, semisinusoidal steamed bun waveform is by corresponding waveform after sinusoidal waveform later half cycle progress 180 degree phase bit flipping；Commutation control circuit, is connected with boost control circuit, and the semisinusoidal steamed bun waveform for boost control circuit to be exported is commutated, to export the single-phase sine wave alternating current of sinusoidal waveform.The present invention solves the problem of single-phase sinewave inverter efficiency is low in the prior art, while improving efficiency, reduces cost, reduces volume.
Description
Technical field
The present invention relates to electric and electronic technical field, in particular to a kind of single-phase sinewave inverter and its control
Method.
Background technology
Single-phase sinewave inverter is the inverter for direct current being become single-phase sine wave AC, and output exchange is sine wave.
Traditional single phase sine wave inverter circuit principle is as shown in figure 1, wherein, L1, S5, D5, C constitute boost booster circuits, to meet
Export AC voltage；S1, D1, S2, D2, S3, D3, S4, D4 constitute inverter circuit, the friendship that DC inverter is required into satisfaction
Flow electricity output.
In foregoing circuit, S1, D1, S2, D2, S3, D3, S4, D4 composition inverter circuit work when, have unipolarity modulation and
Point of bipolar modulation.When unipolarity is modulated, two transistor high frequency switches, two other transistor power frequency switch, and need
Want power filter inductance (L2, L3 in Fig. 1) that inverter current is filtered into sinewave output；During bipolar modulation, four crystal
Pipe full high-frequency is switched, and needs also exist for power filter inductance (L2, L3 in Fig. 1) that inverter current is filtered into sine wave is defeated
Go out.
Inverter circuit part in traditional single phase sinewave inverter, either unipolarity are modulated and bipolar modulation, inverse
Become at least two transistors in part and be operated in HF switch, and need power filter inductor filter electric current.Because transistor
When being operated in HF switch, efficiency can be reduced.Power filter inductor filter inverter current can also reduce efficiency, and can also increase
Cost and bring heating problem.
For the problem of single-phase sinewave inverter efficiency is low in correlation technique, the side of efficiently solving not yet is proposed at present
Case.
The content of the invention
It is single-phase in the prior art at least to solve the invention provides a kind of single-phase sinewave inverter and its control method
The problem of sinewave inverter efficiency is low.
In order to solve the above technical problems, according to the one side of the embodiment of the present disclosure, it is single-phase just the invention provides one kind
String ripple inverter, including：Boost control circuit, is connected with input direct voltage, for input direct voltage boosting to be met
The voltage of the semisinusoidal steamed bun waveform of required output voltage volt value, wherein, semisinusoidal steamed bun waveform is by sinusoidal waveform second half
Phase carries out corresponding waveform after 180 degree phase bit flipping；
Commutation control circuit, is connected with boost control circuit, for the semisinusoidal steamed bun ripple for exporting boost control circuit
Shape is commutated, to export the single-phase sine wave alternating current of sinusoidal waveform.
Further, boost control circuit includes：First inductance L1, the second inductance L2, the first electric capacity C1, the second electric capacity
C2, the 3rd electric capacity C3, the 4th electric capacity C4, the 5th transistor S5, the 6th transistor S6, the first diode D1 and the second diode
D2, wherein,
First inductance L1 first end positive pole respectively with input direct voltage Vdc, the 3rd electric capacity C3 first end are connected,
First inductance L1 the second end positive pole respectively with the first diode D1, the 5th transistor S5 first end are connected；
3rd electric capacity C3 the second end and the 4th electric capacity C4 first end, and it is connected to first node, the 5th transistor S5
The second end, the 6th transistor S6 first end be connected to first node；
First electric capacity C1 first end is connected with the first diode D1 negative pole, the first electric capacity C1 the second end and the second electricity
Hold C2 first end connection, and be connected to first node, the second electric capacity C2 the second end is connected with the second diode D2 positive pole；
Second inductance L2 first end negative pole respectively with input direct voltage Vdc, the 4th electric capacity C4 the second end are connected,
Second inductance L2 the second end the second end respectively with the 6th transistor S6, the second diode D2 negative pole are connected.
Further, commutation control circuit includes：The first transistor S1, second transistor S2, third transistor S3 and
4th transistor S4, wherein,
The first transistor S1 first end negative pole respectively with the first diode D1, the first electric capacity C1 first end are connected,
The first transistor S1 the second end and the first end of third transistor are connected, and are connected to the first output of commutation control circuit
End, the second end of third transistor the second end respectively with the second electric capacity C2, the second diode D2 positive pole are connected, and are connected to
4th transistor S4 the second end；
Second transistor S2 first end is connected with the first transistor S1 first end, second transistor S2 the second end with
4th transistor S4 first end connection, and it is connected to the second output end of commutation control circuit.
Further, the first diode D1 and/or the second diode D2 is fast recovery diode.
Further, the first transistor S1 and/or second transistor S2 is IGCT.
Further, the 5th transistor S5 and/or the 6th transistor S6 is field-effect transistor.
Further, third transistor S3 and/or the 4th transistor S4 is field-effect transistor.
According to the another aspect of the embodiment of the present disclosure, there is provided a kind of control method of single-phase sinewave inverter, the party
Method includes：The 5th transistor S5, the 6th transistor S6 high frequencies interlock work in control boost control circuit；Control commutation control electricity
The first transistor S1 and the 4th transistor S4 are opened and turned off with sequential in road, second transistor S2 in control commutation control circuit
Open and turn off with sequential with third transistor S3.
Further, the first transistor S1 and the 4th transistor S4 is opened and closed with sequential in control commutation control circuit
Disconnected, second transistor S2 and third transistor S3 is opened and turned off with sequential in control commutation control circuit, including：In boosting control
During the n-th semisinusoidal steamed bun waveform of the semisinusoidal steamed bun waveform of circuit output voltage volt value processed, control the first transistor S1 and
4th transistor S4 is open-minded, second transistor S2 and third transistor S3 shut-offs；In boost control circuit output voltage volt value
During the N+1 semisinusoidal steamed bun waveform of semisinusoidal steamed bun waveform, control the first transistor S1 and the 4th transistor S4 shut-offs, the
Two-transistor S2 and third transistor S3 are open-minded, wherein, N is natural number.
Further, this method also includes：The single-phase sine wave alternating current for controlling commutation control circuit output is low frequency, the
One transistor S1, second transistor S2, third transistor S3 and the 4th transistor S4 and commutation control circuit output it is single-phase
Sine wave alternating current same frequency works.
In the present invention, boost booster circuits in traditional single-phase sinewave inverter are improved and risen there is provided one kind
Voltage-controlled circuit processed, input direct voltage Vdc passes through this boost control circuit, obtains that the half of single-phase sine wave AC output can be met
Sinusoidal steamed bun ripple, is then commutated by commutation control circuit, exports the single-phase sine wave alternating current of sine wave.This circuit
Structure saves traditional single phase sinewave inverter power filter inductance, improves single-phase sinewave inverter efficiency in the prior art
Low the problem of, while improving efficiency, cost is reduced, reduces volume.
Brief description of the drawings
Fig. 1 is a kind of optional circuit structure diagram of single-phase sinewave inverter in the prior art；
Fig. 2 is a kind of optional structured flowchart of single-phase sinewave inverter according to embodiments of the present invention；
Fig. 3 is a kind of optional circuit structure diagram of single-phase sinewave inverter according to embodiments of the present invention；
Fig. 4 is a kind of optional circuit analysis figure of single-phase sinewave inverter according to embodiments of the present invention；And
Fig. 5 is another optional circuit analysis figure of single-phase sinewave inverter according to embodiments of the present invention.
Embodiment
Here exemplary embodiment will be illustrated in detail, its example is illustrated in the accompanying drawings.Following description is related to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represent same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent and the consistent all embodiments of the present invention.On the contrary, they be only with it is such as appended
The example of the consistent apparatus and method of some aspects be described in detail in claims, the present invention.
Embodiment 1
The single-phase sinewave inverter that the present invention is provided is illustrated below in conjunction with the accompanying drawings.
Fig. 2 shows a kind of optional circuit structure diagram of the single-phase sinewave inverter of the present invention, wherein, single-phase sine wave
Inverter includes boost control circuit 10, is connected with input direct voltage Vdc, for input direct voltage to be boosted to meet
The voltage of the semisinusoidal steamed bun waveform of output voltage volt value is needed, wherein, semisinusoidal steamed bun waveform is by the sinusoidal waveform later half cycle
Carry out corresponding waveform after 180 degree phase bit flipping；Commutation control circuit 20, is connected with boost control circuit 10, for that will boost
The semisinusoidal steamed bun waveform of control circuit output is commutated, to export the single-phase sine wave alternating current of sinusoidal waveform.
In the present invention, boost booster circuits in traditional single-phase sinewave inverter are improved and risen there is provided one kind
Voltage-controlled circuit processed, input direct voltage Vdc passes through this boost control circuit, obtains that the semisinusoidal steamed bun of single phase ac output can be met
Bow wave, is then commutated by commutation control circuit, exports the single-phase sine wave AC voltage of sine wave.This circuit structure
Traditional single phase sinewave inverter power filter inductance is saved, single-phase sinewave inverter efficiency in the prior art is improved low
Problem, while improving efficiency, reduces cost, reduces volume.
In the optional embodiment of the application, a kind of implementing for above-mentioned boost control circuit is additionally provided
Mode, specifically, as shown in figure 3, boost control circuit includes：First inductance L1, the second inductance L2, the first electric capacity C1,
Two electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4, the 5th transistor S5, the 6th transistor S6, the first diode D1 and second
Diode D2, wherein,
First inductance L1 first end positive pole respectively with input direct voltage Vdc, the 3rd electric capacity C3 first end are connected,
First inductance L1 the second end positive pole respectively with the first diode D1, the 5th transistor S5 first end are connected；
3rd electric capacity C3 the second end and the 4th electric capacity C4 first end, and it is connected to first node, the 5th transistor S5
The second end, the 6th transistor S6 first end be connected to first node；
First electric capacity C1 first end is connected with the first diode D1 negative pole, the first electric capacity C1 the second end and the second electricity
Hold C2 first end connection, and be connected to first node, the second electric capacity C2 the second end is connected with the second diode D2 positive pole；
Second inductance L2 first end negative pole respectively with input direct voltage Vdc, the 4th electric capacity C4 the second end are connected,
Second inductance L2 the second end the second end respectively with the 6th transistor S6, the second diode D2 negative pole are connected.
Above-mentioned boost control circuit, input direct voltage Vdc passes through this boost control circuit, obtains that single-phase sine can be met
The semisinusoidal steamed bun ripple of ripple exchange output, it is simple in construction, work well, meanwhile, when being controlled, S5, S6 high frequency is interlocked
Work, can reduce busbar voltage high frequency ripple.
In the yet another alternative embodiment of the application, a kind of specific reality of above-mentioned commutation control circuit is additionally provided
Existing mode, specifically, as shown in figure 3, commutation control circuit includes：The first transistor S1, second transistor S2, the 3rd crystal
Pipe S3 and the 4th transistor S4, wherein,
The first transistor S1 first end negative pole respectively with the first diode D1, the first electric capacity C1 first end are connected,
The first transistor S1 the second end and the first end of third transistor are connected, and are connected to the first output of commutation control circuit
End, the second end of third transistor the second end respectively with the second electric capacity C2, the second diode D2 positive pole are connected, and are connected to
4th transistor S4 the second end；
Second transistor S2 first end is connected with the first transistor S1 first end, second transistor S2 the second end with
4th transistor S4 first end connection, and it is connected to the second output end of commutation control circuit.
In above-mentioned commutation control circuit, because four switching tubes of full-bridge only realize commutation, four switching tubes are operated in
Low frequency, such inverter efficiency is improved.Power filter inductance is saved simultaneously, inverter efficiency is improved, cost reduction, volume subtracts
It is small.
Such scheme is further detailed with reference to Fig. 4 and Fig. 5, to be better understood from the application：
Fig. 4 is divided the single-phase sine wave inverter circuit structure in Fig. 3, wherein, part A circuit is controlled for boosting
Circuit processed, including：First inductance L1, the second inductance L2, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity
C4, the 5th transistor S5, the 6th transistor S6, the first diode D1 and the second diode D2；Wherein, transistor S5, S6 is high
Frequency staggeredly works, and can reduce busbar voltage high frequency ripple.Part B circuit is commutation control circuit, including：The first transistor S1,
Second transistor S2, third transistor S3 and the 4th transistor S4.
Wherein, the present invention is that input is direct current Vdc, is output as sine wave alternating current AC.Overall work principle of the present invention
For：Input Vdc and pass through A circuits, obtain that the semisinusoidal steamed bun ripple of AC outputs can be met.Then pass through B circuits, export sine wave
AC。
Specific work process is analyzed referring to Fig. 5：
Transistor S5 and S6 drive waveforms are shown in Fig. 5, wherein, transistor S5, S6 are interlocked work using high frequency, are being passed through
After A circuits, the oscillogram of output is semisinusoidal steamed bun ripple, and semisinusoidal steamed bun waveform is to carry out the sinusoidal waveform later half cycle
Corresponding waveform after 180 degree phase bit flipping (referring to the oscillogram in Fig. 5 after A)；Then, by controlling commutation control circuit
Transistor in B, completes the single-phase sine wave alternating current of sinusoidal waveform of final required output (referring to the ripple in Fig. 5 after B
Shape figure).The latter half shows S1, S4 in Fig. 5, S2, S3 drive waveforms, and it uses low frequency operation.
When being controlled, S1, S4 are opened and turned off with sequential, and S2, S3 are opened and turned off with sequential.It is female before B circuits
Line voltage has been semisinusoidal steamed bun ripple.In first semisinusoidal steamed bun ripple, S1, S4 are open-minded, S2, S3 shut-off, S1, S4 with half
Sinusoidal steamed bun ripple same-phase and same frequency, export the positive half cycle of sinusoidal AC.In second semisinusoidal steamed bun ripple, S2, S3 are open-minded,
S1, S4 turn off, S2, S3 with semisinusoidal steamed bun ripple same-phase and same frequency, export sinusoidal AC negative half period.So obtain sine
Ripple AC.
Filter inductance is so eliminated, efficiency is improved.Simultaneously most of single-phase sinewave inverter output AC frequencies are low
Frequently, such as power network 50Hz.Because S1, S2, S3, S4 work with output sinusoidal AC same frequency, such S1, S2, S3, S4 are low
Frequency switch, so also large increase efficiency.
In the above-described embodiment, to boost Curve guide impellers Cheng Xin booster circuit, input direct-current Vdc passes through this circuit,
Obtain that the semisinusoidal steamed bun ripple of AC outputs can be met, then by four switching tube commutations of full-bridge, export sinusoidal AC voltage.By
Commutation is only realized in four switching tubes of full-bridge, four switching tubes are operated in low frequency, and such inverter efficiency is improved.Save simultaneously
Power filter inductance (inductance L2, L3 in Fig. 1), inverter efficiency is improved, and cost reduction, volume reduces.
Embodiment 2
Based on the single-phase sinewave inverter provided in above-described embodiment 1, optional embodiment 2 of the present invention additionally provides one
The control method of single-phase sinewave inverter is planted, this method includes：Control the 5th transistor S5 in boost control circuit, the 6th crystalline substance
Body pipe S6 high frequencies interlock work；The first transistor S1 and the 4th transistor S4 is opened and closed with sequential in control commutation control circuit
Disconnected, second transistor S2 and third transistor S3 is opened and turned off with sequential in control commutation control circuit.
Further, the first transistor S1 and the 4th transistor S4 is opened and closed with sequential in control commutation control circuit
Disconnected, second transistor S2 and third transistor S3 is opened and turned off with sequential in control commutation control circuit, including：In boosting control
The n-th semisinusoidal steamed bun waveform (steamed bun of 0~T/2 constant time ranges in Fig. 5 of the semisinusoidal steamed bun waveform of circuit output voltage volt value processed
Bow wave) when, control the first transistor S1 and the 4th transistor S4 is open-minded, second transistor S2 and third transistor S3 shut-offs；
The N+1 semisinusoidal steamed bun waveform of the semisinusoidal steamed bun waveform of boost control circuit output voltage volt value is (T/2~T weeks in Fig. 5
The steamed bun ripple of phase section) when, control the first transistor S1 and the 4th transistor S4 are turned off, second transistor S2 and third transistor S3
It is open-minded, wherein, N is natural number.
Further, this method also includes：The single-phase sine wave alternating current for controlling commutation control circuit output is low frequency, the
One transistor S1, second transistor S2, third transistor S3 and the 4th transistor S4 and commutation control circuit output it is single-phase
Sine wave alternating current same frequency works.
In the above-described embodiment, boost booster circuits in traditional single-phase sinewave inverter are improved there is provided
A kind of boost control circuit, input direct voltage Vdc passes through this boost control circuit, obtains that single-phase sine wave AC can be met defeated
The semisinusoidal steamed bun ripple gone out, is then commutated by commutation control circuit, exports the single-phase sine wave AC voltage of sine wave.
This circuit structure saves traditional single phase sinewave inverter power filter inductance, improves single-phase sine wave in the prior art inverse
Become the problem of device efficiency is low, while improving efficiency, reduce cost, reduce volume.
Those skilled in the art will readily occur to its of the present invention after considering specification and putting into practice invention disclosed herein
Its embodiment.The application be intended to the present invention any modification, purposes or adaptations, these modifications, purposes or
Person's adaptations follow the general principle of the present invention and the common knowledge in the art do not invented including the present invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in the precision architecture for being described above and being shown in the drawings, and
And various modifications and changes can be being carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (10)
1. a kind of single-phase sinewave inverter, it is characterised in that including：
Boost control circuit, is connected with input direct voltage, for input direct voltage boosting to be exported for needed for meeting
The voltage of the semisinusoidal steamed bun waveform of voltage volt value, wherein, the semisinusoidal steamed bun waveform is to enter the sinusoidal waveform later half cycle
Corresponding waveform after row 180 degree phase bit flipping；
Commutation control circuit, is connected with the boost control circuit, for the semisinusoidal steamed bun for exporting the boost control circuit
Bow wave shape is commutated, to export the single-phase sine wave alternating current of sinusoidal waveform.
2. single-phase sinewave inverter according to claim 1, it is characterised in that the boost control circuit includes：The
One inductance L1, the second inductance L2, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4, the 5th transistor S5,
6th transistor S6, the first diode D1 and the second diode D2, wherein,
The first end of first inductance L1 positive pole respectively with the input direct voltage Vdc, the of the 3rd electric capacity C3
One end is connected, positive pole, the 5th transistor S5 of the second end of the first inductance L1 respectively with the first diode D1
First end connection；
The second end of the 3rd electric capacity C3 and the first end of the 4th electric capacity C4, and it is connected to first node, the described 5th
Transistor S5 the second end, the first end of the 6th transistor S6 are connected to the first node；
The first end of the first electric capacity C1 is connected with the negative pole of the first diode D1, the second end of the first electric capacity C1
It is connected with the first end of the second electric capacity C2, and is connected to the first node, the second end of the second electric capacity C2 and institute
State the second diode D2 positive pole connection；
The first end of second inductance L2 negative pole respectively with the input direct voltage Vdc, the of the 4th electric capacity C4
Two ends are connected, the second end of the second inductance L2 the second end respectively with the 6th transistor S6, second diode
D2 negative pole connection.
3. single-phase sinewave inverter according to claim 2, it is characterised in that the commutation control circuit includes：The
One transistor S1, second transistor S2, third transistor S3 and the 4th transistor S4, wherein,
The first end of the first transistor S1 negative pole respectively with the first diode D1, the first of the first electric capacity C1
End connection, the second end of the first transistor S1 is connected with the first end of the third transistor, and is connected to the commutation
Control the first output end of circuit, it is the second end of the third transistor the second end respectively with the second electric capacity C2, described
Second diode D2 positive pole connection, and it is connected to the second end of the 4th transistor S4；
The first end of the second transistor S2 is connected with the first end of the first transistor S1, the second transistor S2's
Second end is connected with the first end of the 4th transistor S4, and is connected to the second output end of the commutation control circuit.
4. the single-phase sinewave inverter according to Claims 2 or 3, it is characterised in that the first diode D1 and/or
Second diode D2 is fast recovery diode.
5. single-phase sinewave inverter according to claim 3, it is characterised in that the first transistor S1 and/or institute
Second transistor S2 is stated for IGCT.
6. the single-phase sinewave inverter according to Claims 2 or 3, it is characterised in that the 5th transistor S5 and/or
The 6th transistor S6 is field-effect transistor.
7. single-phase sinewave inverter according to claim 3, it is characterised in that the third transistor S3 and/or institute
The 4th transistor S4 is stated for field-effect transistor.
8. a kind of control method of single-phase sinewave inverter as described in claim any one of 3-7, it is characterised in that bag
Include：
The 5th transistor S5 in the boost control circuit, the 6th transistor S6 high frequencies is controlled to interlock work；
The first transistor S1 and the 4th transistor S4 in the commutation control circuit is controlled to open and turn off with sequential, control commutation
Second transistor S2 and third transistor S3 is opened and turned off with sequential described in control circuit.
9. the control method of single-phase sinewave inverter according to claim 8, it is characterised in that changed described in the control
Into control circuit, the first transistor S1 and the 4th transistor S4 is opened and turned off with sequential, described in control commutation control circuit
Second transistor S2 and third transistor S3 are opened and turned off with sequential, including：
In the n-th semisinusoidal steamed bun waveform of the semisinusoidal steamed bun waveform of the boost control circuit output voltage volt value, control
Make the first transistor S1 and the 4th transistor S4 is open-minded, second transistor S2 and third transistor the S3 shut-off；
In the N+1 semisinusoidal steamed bun waveform of the semisinusoidal steamed bun waveform of the boost control circuit output voltage volt value,
The first transistor S1 and the 4th transistor S4 is controlled to turn off, the second transistor S2 and third transistor S3 are opened
It is logical, wherein, N is natural number.
10. the control method of single-phase sinewave inverter according to claim 9, it is characterised in that also include：
The single-phase sine wave alternating current for controlling the commutation control circuit output is low frequency, the first transistor S1, the second crystalline substance
Body pipe S2, third transistor S3 and the 4th transistor S4 and the single-phase sine wave alternating current of the commutation control circuit output are same
Frequency works.
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| US20040165408A1 (en) * | 2003-02-21 | 2004-08-26 | Mr.Rick West | Dc to ac inverter with single-switch bipolar boost circuit |
| CN101902145A (en) * | 2009-05-28 | 2010-12-01 | 通用电气公司 | Solar inverter and control method |
| CN103208935A (en) * | 2012-01-14 | 2013-07-17 | 牟英峰 | Low-common-mode-noise grid-connected inverter circuit and reactive power control method |
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Application publication date: 20171027 |