CN106575923A - Dc-to-dc converter comprising a transformer - Google Patents

Dc-to-dc converter comprising a transformer Download PDF

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Publication number
CN106575923A
CN106575923A CN201580041038.6A CN201580041038A CN106575923A CN 106575923 A CN106575923 A CN 106575923A CN 201580041038 A CN201580041038 A CN 201580041038A CN 106575923 A CN106575923 A CN 106575923A
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China
Prior art keywords
transformer
power
networks
semiconductor switch
bridge
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CN201580041038.6A
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Chinese (zh)
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CN106575923B (en
Inventor
马尔科·施蒂内克
里克·W·A·A·德东克
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Rheinisch Westlische Technische Hochschuke RWTH
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Rheinisch Westlische Technische Hochschuke RWTH
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33538—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type
    • H02M3/33546—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type with automatic control of the output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33584—Bidirectional converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/14—Arrangements for reducing ripples from dc input or output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention relates to a DC-to-DC converter, to a DC voltage network comprising a DC-to-DC converter and to a method for operating a DC voltage network comprising a DC-to-DC converter, the DC-to-DC converter comprising a circuit arrangement with two bridge circuits with semiconductor switches and a transformer arranged between the bridge circuits. The transformer is provided with a tap changer which allows the transformation ratio to be adjusted. The selection of the transformation ratio allows the soft-switching range of the dual active bridge to be increased to that of a DC-to-DC converter. This allows purely capacitive snubbers to be used as snubbers, thus reducing switching losses.

Description

Dc-dc
Description
The present invention relates to a kind of dc-dc with transformer.Connect with a two bridge-types and transformer DC it is topological, wherein bridge-type connection is referred to as double actives bridge (DAB), and transformer is arranged between double active bridges, and this DC topology makes Must be by generating set, for example, wind power plant, the storage system of photovoltaic apparatus, such as battery charging equipment, and will such as drive The electric loading of dynamic device is connected to DC networks and is possibly realized.Additionally, the DC networks with identical voltage or different voltages can also lead to Cross the Topology connection.Transformer guarantees to be galvanically isolated.
IEEE commercial Applications society annual meeting deliver within 1988 it is entitled " for high power applications three-phase soft handover Gao Gong The file of rate density DC/DC converter " and, U.S. Patent No. 5,027,264 is entitled " to be turned using the DC/DC of double active bridges The power conversion device for changing ", discloses the dc-dc with three-phase system.In dc-dc, exist positioned at two Transformer between individual bridge-type connection.This dc-dc can be in the range of watt, until Gigawatt range is used. Here, all power electronic switching circuits are operated in soft handoff range, as a result, it is possible to the damage during reducing switching manipulation Consumption, and switching frequency can be improved.
The A1 of German patent application DE 3721591 disclose a kind of transformer ratio for switching transformer on the primary side as well Method.This transformer is a special intermediate-frequency transformer, and it has during operation big voltage and current scope.It is this Transformer is used as the high pressure generator in the X-ray emitter powered to X-ray tube.In order to adapt to the electric current and the electricity that apply Pressure, transformer is provided with step switch, by the step switch transformer ratio of transformer can be changed.Switching voltage-transformation coefficient makes Obtain primary current to reduce, and therefore also cause via the power network current consumption sum of the control element for being connected to transformer upstream The reduction of electric current.For switching voltage-transformation coefficient, the shut-off operation in the primary side of step switch upstream is performed so that step The contact element of switch is not under load, therefore almost without undergoing any abrasion during handover operation.
The present invention seeks to propose a kind of dc-dc that can realize higher efficiency.
The purpose realizes that the soft handoff range of wherein dual-active-bridge is extended by double active bridge-sets.It is double to have The operating in soft handover scope of source bridge dc-dc is depended between the power to be transmitted and input voltage and output voltage Ratio.The switching loss of the semiconductor for being used is minimized, and system effectiveness is maximized in the range of operating in soft handover. The purpose of the present invention is realized by using the transformer equipped with step switch.Step switch allows to change transformer ratio, its As a result it is that operation is maintained in soft handoff range.
In the case of there is larger difference particularly between input voltage and output voltage, operation is dropped in the soft handover Outside scope.Switching loss increases and efficiency is reduced.By the transformer ratio for changing transformer, can be allowed to be maintained at soft and cut In the range of changing.
In an advantageous embodiment of the invention, there is provided purely capacitive property buffer, wherein capacitor are with semiconductor switch simultaneously Connection connection, to minimize turn-off power loss.When buffer condenser is only used, operation necessarily be in soft handoff range, and Depart from the scope in the case of not in dc-dc is not extended.If dc-dc is used as having change voltage Two DC networks between connection, or if the energy storage system with very significant voltage pulsation is integrated into DC In network, then the restriction is particularly critical.
In the preferred embodiment that need not be galvanically isolated wherein, using auto-transformer as transformer.Self coupling transformation Device is commercially sold with much lower price.
Embodiments of the invention are described below with reference to accompanying drawings.
Show as follows：
Fig. 1 has a schematic diagram of single-phase double active bridges of changeable transformer；
Fig. 2 has single-phase double active bridges of the diode of power switch, releasing capacitor (buffer) and inverse parallel connection One circuit diagram of dc-dc；
Fig. 3 is used for a transformer with the double active bridges of three-phase of mechanical step switch；
One circuit diagram of Fig. 4 transformers, transformer has the step switch with semiconductor switch；
Fig. 5 describes a curve map of soft handoff range；
One schematic diagram of the double active bridges of Fig. 6 three-phases；
Fig. 7 has a circuit diagram of the double active bridges of the three-phase of step switch.
Fig. 1 shows a schematic diagram of the dc-dc 1 with single-phase double forms of active bridge 25, and it is called list for short Phase DAB.DAB has the first bridge-type connection 3, is alternating current by DC power conversion using the first bridge-type connection 3.Alternating current is by matching somebody with somebody The transformer 5 for having step switch 7 is converted.The transformer ratio n of transformer can be set by step switch 7.Step switch 7 High-pressure side and low-pressure side can be used in.Turned by subsequent the second bridge-type connection 3 by means of the alternating current that transformer is produced Gain DC current.By this way, being present in the DC voltage of the side of DAB can be converted to different DC voltages. On the both sides of DAB, there is smoothing capacity device 6, using the smoothing capacity device 6 voltage pulsation of also referred to as ripple can be smoothed. These voltage pulsations and ripple may be by the failure in connection system (such as cable network, trolley line system) and DAB itself Handover operation cause.
Fig. 2 shows a circuit diagram of single-phase DAB 25.The configuration of bridge-type connection 3 can be seen in circuit diagram.Institute In the embodiment shown, bridge-type connection 3 is uniformly set on the both sides of transformer 5.Each bridge-type connection 3 has in bridging connects Four semiconductor switch modules 9.Each semiconductor switch module 9 includes the IGBT 11 as semiconductor switch 10.Other are partly led The use of body such as MOSFET or IGCT equally can be technically what is expected.As long as there is one to be maintained in soft handoff range, MOSFET and reverse-conducting IGBT avoid the need for any anti-paralleled diode.However, this example show and semiconductor switch The diode 13 of inverse parallel connection.As buffer 15, a capacitor 17, also referred to as C buffers 17, with semiconductor switch 10 simultaneously Connection connection.Transformer two bridge-types are connected and therefore the both sides to dc-dc 1 be galvanically isolated.Here, smooth Capacitor 6 is also connected in parallel to bridge-type connection 3.
The better quality for being galvanically isolated the DC voltage according to design and conversion in DAB 1 is produced a little, and is prevented The diffusion (at input and output) of the failure and failure that only occur in the system of connection.
Due to being galvanically isolated, the semiconductor switch module 9 of DAB, DAB and ground potential isolate and with the component being connected The isolation of (cable, generator, motor, protection device, energy-storage system etc.) is merely had to for going out in the respective side of transformer 5 Existing maximum voltage is determining specification.If the rated voltage between input and output end due to transformer 5 turn ratio and Change, then this is particularly advantageous.
Being galvanically isolated in dc-dc could be realized only when direct current is converted into alternating current.By becoming After being galvanically isolated of depressor 5, alternating current is by rectification again.Voltage pulsation (ripple) in direct current affects produced alternating current In electric current quality.Due to the filtering effect of transformer 5, from the side of transformer 5 some failures or fluctuation will not pass It is defeated to opposite side.Therefore, after alternating current has been converted into direct current, these voltage pulsations (ripple) have not existed.This changes It has been apt to subsequently by the stable quality for being transformed electric current of DC link. capacitors.
These voltage pulsations and ripple may be drawn by the failure in connection system (such as cable system, trolley line system) Rise.When using dc-dc is galvanically isolated, these failures are isolation.Due to being galvanically isolated, due to (the example that breaks down Such as, two short circuits originally between the electric power networks of isolation etc.) and the system voltage that causes relative to earth potential wrong increasing Plus equally it is not transferred to transformer.
Therefore, DAB is formed in the suitable topology used in the DC networks in future.DAB can serve as two distribution networks Between control element, to adjust power flow.However, DAB can be also used for linking energy storage system and regenerative resource (wind-force, solar energy etc.).In these applications, the power of DAB is in many megawatt ranges.By connecting and being connected in parallel Multiple DAB, can build DAB system of total output corresponding to the summation of part output.
Used in the DAB 1 that C buffers 17, RC buffers and RCD buffers can consider here.All buffering electricity Road 15 is connected in parallel with semiconductor switch 10 (IGBT, IGCT, MOSFET) and diode 13.C buffers 17 are only capacitor, RC buffers are being connected in series for capacitor and resistor, and in the case of RCD buffers, additional diode is connected to The resistor of RC buffers.C buffers 17, also referred to as " lossless buffer ", constitute maximally effective solution.However, When using C buffers 17, allow to depart from soft switching mode in no instance, this will be solved in further detail below Release.
As the DAB 1 (many megawatts until m. gigawatt (GW) level) of the performance class for being related to consider here, and when input and When output voltage is in middle pressure scope (>=1kV), IGBT 11 and IGCT is used as semiconductor switch 10.Preferably use Silicon IGBT and IGCT.However, being equally conceivable the MOSFET being connected in series.Partly leading based on SiC and GaN can also be used Body.It is commercially available that the advantage of IGBT and IGCT is these high-performance components, therefore can block and switch high voltage and biography High current is led, without the connected in series or in parallel of complexity.Another is characterized in that both technologies in many megawatts of applications High efficiency and therefore the typical switching frequency in kilohertz range in high efficiency.The connection loss of semiconductor switch 10 can With by using minimizing in some working ranges.Semiconductor switch 10 is always only turned in the diode 13 being connected in parallel Connect during electric current.This guarantees the voltage close zero via semiconductor switch 10 and hardly occurs to connect loss.By using So-called buffer circuit 15 can reduce the turn-off power loss of semiconductor.
In soft switching mode, when related semiconductor switch 10 is connected, the conducting electric current of diode 13.This In the case of, also ensure that buffer condenser 17 discharges.In direct-cut operation opereating specification, any electric current of the non-conducting of diode 13-slow Rush capacitor 17 and be charged to input voltage.If switch on semiconductor switch 10, then the short circuit of buffer condenser 17 charged and By semiconductor switch 10, such as IGBT/IGCT electric discharges.This may damage component.Therefore, soft switching mode is not only permitted Perhaps the high efficiency of DAB 1, and allow to use non-loss buffer.
On the other hand the availability of lossless buffer is limited：Load current is in soft switching mode to buffering electricity Container 17 discharges.If buffer condenser 17a has discharged, electric current continues to flow through diode 9a (in parallel with capacitor 17a). Buffer condenser 17b- its circuit breakers 10b have been disconnected-charging process similar to capacitor 17a discharge process, Capacitor 17a is in parallel with the power semiconductor switch 10a for assuming directly to connect.If load current is insufficient to greatly, partly leading Before body switch 10a is connected, buffer condenser 17a can not discharge in time.Such as in the case of hard switching mode, this may Cause the damage of component.Therefore, the availability of non-loss buffer is not only limited by direct-cut operation opereating specification, and by must be by The minimum power (minimum current) that DAB 1 sends is limited.
If when DAB is used for wind power station, the underpower transmitted by DAB is enough big, then DAB can not be delayed with lossless Rush device start-up operation.By using energy storage system (not shown here), the disappearance work(that can be up to needed for minimum power Rate is added to system.By this way, can be with start-up operation equipped with the DAB of buffer condenser 17.
If from deviateing excessive compared with 1, transformer current is no longer lagged behind ratio d of input voltage and output voltage Transformer voltage, and semiconductor is no longer with soft handoff mode operation.Fig. 5 is shown according to d and according to power waiting for transmission Border.In addition to the loss of soft switching mode, if d deviates from 1, the efficiency of DAB is also deteriorated.
The adaptation of the turn ratio of transformer 5 can expand operating in soft handover scope.By changing the tap on winding, use Step switch 7 is adjusting turn ratio.Step switch 7 and therefore the tap adjustment on winding can mechanically carry out, such as Fig. 3 It is shown, and electronically carry out, as shown by way of example in figure 4, or in July, 1998 in IEEE Transaction on Entitled " a kind of method of the new solid-state load tap-change transformer " phase that Power Delivery, vol.13, no.3 are delivered Shown on periodical.In electrical arrangement, various tap operations are realized by power semiconductor, if applicable, by two phases Bidirectional current is allowed to conduct with the inverse parallel connection of part.Corresponding power semiconductor be switched on according to the turn ratio to be arranged or Shut-off.The winding of transformer 5 is represented in figs. 3 and 4 with reference 43.Can adopt what is can turned off in electrical arrangement Power semiconductor 35 and the power semiconductor 35 (especially IGCT) that can not be turned off.For arranging the transformer of turn ratio Step switch be configured to that at least two states can be realized.Preferred embodiment is such step switch, and it can be arranged The different turn ratios of any desired quantity of transformer.Fig. 5 is the view of direct-cut operation opereating specification and operating in soft handover scope.Mark The power P of standardizationoNormal axis is plotted in, in y-axis, is changed with the angle φ of each value of d.Here, d represents that DC-DC turns The voltage ratio of parallel operation.Voltage ratio d between input voltage and output voltage also depends on the transformer ratio of transformer 5.Transformer 5 Voltage ratio can be changed by step switch 7.As a result, it is possible to change voltage ratio d so that can again reach or protect Hold soft handoff range.
Due to the change of turn ratio or voltage ratio n, in this application to input voltage VpOr output voltage Vs, Vs'Without shadow Ring.Its target is to affect d by adjusting n.
The soft handoff range of double active bridge-sets by transformer amplify, its transformer ratio n can by step switch come Change.Soft handoff range is the scope that semiconductor module 9 is still turned on when semiconductor switch 10 disconnects.Depict in figure Border 37 between the soft handoff range of the bridge-type connection 3 of input side.Additionally, marked the soft handover of the bridge-type connection of outlet side Border 39 between scope and direct-cut operation scope.Operation in these borders guaranteed by higher level's adjustment unit, the higher level Adjustment unit affects turn ratio according to operating parameter.
Fig. 6 shows three-phase DAB 27.Three-phase DAB 27 has the first bridge-type connection 2 in input side, and in output Side has bridge-type connection 4.By bidirectional bridge type connection 3 by converting direct-current power into alternating-current power, vice versa.
Between bridge-type connection, there is the transformer 5 equipped with step switch 7 successively.On input side and outlet side again There is smoothing capacity device 6.
The detailed view of three-phase bridge connection is as shown in Figure 7.In order to provide three-phase alternating current, six semiconductor modules 9 Bridge-type connection 3 is connected on the input side of transformer 5.In an identical manner, six semiconductor modules 9 connect on the output side To bridge-type connection 3.Each semiconductor module 9 has semiconductor switch 10.GaN, such as silicon and MOSFET, IGBT's and IGCT Silicon carbide components may be used to contemplated application.According to the design of semiconductor switch 10, diode 13 and buffering electricity Container 17 is connected in parallel with semiconductor switch 10.
In general, step switch using produce higher level of efficiency be to, there is no buffer condenser 17 Single-phase DAB (1p-DAB) or three-phase DAB (3p-DAB) configuration in be also such.Under without departing from 1 many voltage ratios The operation of dc-dc, reduces the reactive power in transformer.This causes transformer and two Power electronic converters In loss it is less.The transformer that the reduction of reactive power also causes configuration less becomes possibility.Which save material and drop Low cost.
Basically, it is necessary to distinguish single-phase DAB (1p-DAB) 25 and three-phase DAB (3p-DAB) 27.1p-DAB's 25 is excellent Point is the negligible amounts of semiconductor switch 10 needed for it, i.e., 8, and (soft with optimization efficiency using wide array processing strategy Switching operation modes) possibility.By contrast, 3p-DAB 27 uses 12 semiconductor switch 10.3p-DAB's 27 is excellent Point particularly in, required passive component, such as transformer 5 and smoothing capacity device 6, size allow than in comparable 1p- Less size in the case of DAB 25.Soft switching mode can be equally realized using 3p-DAB 27.
The magnetic flux interlinked in transformer 5 determines the required cross-sectional surface product of used transformer core. In order that producing the common flux commissure of 3p-DAB 27 with 1p-DAB 25, input voltage or output voltage only allow to reach The 44% of the voltage of 3p-DAB 27.On the contrary, this means if it is assumed that DC current is for 1p-DAB 25 and for 3p- If DAB 27 is identical, the cross-sectional surface product of the transformer 5 in 1p-DAB and size (and cost) are more than 3p-DAB The cross-sectional surface product of 27 transformer 5.
Galvanic ripple in the case of 3p-DAB 27 is less than the ripple in the case of 1p-DAB 25.Its result It is that in the case of 1p-DAB 25, the smoothing capacity device 6 at input and output must have higher electric capacity.If input electricity It is when dynamic electric voltage between pressure and output voltage deviates 1 than d, then especially true.In this case, smoothing capacity device is obtained Electric current is also very big.This equally must take in size design, and it produces shortcoming in terms of size and cost.
In a word, especially, it can be mentioned that the following preferred feature of the present invention.The present invention relates to a kind of equipment.
Reference numerals list
1 dc-dc, double active bridges
2 input side bridge-type connect
3 bridge-types connect
4 outlet side bridge-type connect
5 smoothing capacity devices
7 step switch
9 semiconductor modules
10 semiconductor switch
11 IGBT
13 diodes
15 buffer circuits
17 buffer condensers
The power semiconductor switch of 21 step switch
25 single-phase DAB
27 three-phase DAB
The switching of 33 step switch
The power semiconductor of 35 step switch
Input between 37 soft handovers and direct-cut operation scope is limited
Export-restriction between 39 soft handovers and direct-cut operation scope
The armature winding of 43 transformers
The secondary windings of 45 transformers.

Claims (11)

1. a kind of dc-dc (1), an including circuit arrangement, circuit arrangement have the connection of two bridge-types (3,2,4) become with one Depressor (5), bridge-type connection have semiconductor switch (10), transformer arrangement bridge-type connect (3,2,4) between,
Characterized in that,
Transformer (5), can be with switching voltage-transformation coefficient by means of the step switch equipped with step switch (7).
2. dc-dc as claimed in claim 1,
Characterized in that,
With silicon semiconductor or semiconductor based on carborundum or based on gallium nitride, it is used as providing partly leading for higher frequency clock Body switchs (10).
3. dc-dc as claimed in claim 1 or 2,
Characterized in that,
With auto-transformer, using as transformer.
4. such as dc-dc in any one of the preceding claims wherein,
Characterized in that,
There is provided as power semiconductor switch IGBT (11) or IGCT as semiconductor switch (10), by the semiconductor switch Dc-dc (1) can used in the performance rate of up to Gigawatt range, wherein preferably, diode (13) with it is every Individual power semiconductor switch is connected in antiparallel.
5. such as dc-dc in any one of the preceding claims wherein,
Characterized in that,
Dc-dc (1) is a three-phase dc-dc (27).
6. such as dc-dc in any one of the preceding claims wherein,
Characterized in that,
Only one of which buffer condenser (17) is arranged to the buffer circuit (15) in parallel with each semiconductor switch (10).
7. such as dc-dc in any one of the preceding claims wherein,
Characterized in that,
For switching transformer (5) transformer ratio step switch (7) with the power semiconductor switch that can be disconnected.
8. such as dc-dc in any one of the preceding claims wherein,
Characterized in that,
For the transformer ratio of switching transformer (5), step switch (7), preferably IGCT, with the power that can not be turned off Semiconductor.
9. a kind of DC networks with least one dc-dc (1) as described in one of aforementioned claim,
Characterized in that,
DC networks have at least one energy storage system that can be associated with dc-dc (1), if under minimum current The predetermined minimum power needed for operation dc-dc (1) is fallen below, then power can be additionally provided by it, so as to Start the operation of dc-dc (1).
10. it is a kind of to operate the DC networks for including at least one dc-dc (1) as any one of claim 1 to 8 Method, comprise the following steps：
The electric current produced by generator provides the power less than predetermined minimum power, wherein can not under this predetermined minimum power Transmitted by dc-dc (1)；
From the energy storage system feeding excess power being associated with the generator, to exceed predetermined minimum power；With And
The power provided jointly by generator and energy storage system is fed in DC networks by dc-dc (1).
A kind of 11. DC networks of the dc-dc (1) with as any one of claim 1 to 8,
Characterized in that,
At least one power generator, preferred rechargeable energy generator, particularly wind power plant, be provided at equipped with In dc-dc (1) or the DC networks that are associated with dc-dc, the electric current for thus being produced by power generator can be with It is fed in DC networks via dc-dc (1).
CN201580041038.6A 2014-07-24 2015-07-22 DC-DC converter Expired - Fee Related CN106575923B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014214542.2A DE102014214542A1 (en) 2014-07-24 2014-07-24 DC-DC converter with transformer
DE102014214542.2 2014-07-24
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