CN105610343B - Suppress the modulator approach of H bridge cascaded inverter leakage currents - Google Patents

Suppress the modulator approach of H bridge cascaded inverter leakage currents Download PDF

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CN105610343B
CN105610343B CN201610127854.5A CN201610127854A CN105610343B CN 105610343 B CN105610343 B CN 105610343B CN 201610127854 A CN201610127854 A CN 201610127854A CN 105610343 B CN105610343 B CN 105610343B
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module
vref
level
frequency module
bridge
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CN105610343A (en
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王付胜
于世能
杨乐
毛旺
张兴
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Hefei University of Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for ac mains or ac distribution networks
    • H02J3/38—Arrangements for parallely feeding a single network by two or more generators, converters or transformers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention discloses a kind of modulator approach of suppression H bridge cascaded inverter leakage currents.The modulator approach can keep making all module parasitic capacitor voltage sums constant, so as to eliminate leakage current.Methods described includes：All modules are formed into a module according to rule two-by-two, and are divided into two kinds of power frequency module and high frequency module；The on off state of power frequency module is relatively obtained by modulating wave with fixed value；The on off state of high frequency module is relatively obtained by revised modulating wave and two stacking triangular carriers；Corresponding pwm signal is generated by Switch State Combination in Power Systems, and is assigned to corresponding pin.The program can be used for more H bridges cascaded inverters, it is not necessary to increases extra hardware cost, can eliminate the leakage current for flowing into power network, Simultaneous Switching loss is relatively low, and implementation is simple.

Description

Suppress the modulator approach of H bridge cascaded inverter leakage currents
Technical field
The present invention relates to a kind of modulator approach of single-phase H bridges cascaded inverter, it can especially suppress non-isolation type H bridge levels Join the modulator approach of grid-connected photovoltaic inverter leakage current；It is applied to parallel network power generation field.
Background technology
Safe to use to ensure, the standards of VDE 4105 are to (the leakage of photovoltaic (Photovoltaic, PV) grid-connected system common mode current Electric current) there is strict limitation.PV and power network electrical isolation can be realized using net side power frequency isolation transformer, suppress leakage current, but It is that Industrial Frequency Transformer volume is big, weight is heavy, cost is high, system effectiveness is low.The electricity of PV and power network is realized according to high frequency transformer Air bound is from can reduce system bulk, weight and cost, but power conversion is divided into several levels, and system effectiveness does not substantially change It is kind.And the conversion efficiency of combining inverter and the generating efficiency of photovoltaic generating system are closely related.Therefore, efficiency high, small volume, The non-isolated grid-connected inverter low with cost in light weight has a clear superiority.But save transformer and cause photovoltaic battery panel and electricity There is electrical connection between net, leakage current may be significantly increased, and bring conduction and radiation interference, increase grid-connected current is humorous Ripple and loss, or even jeopardize equipment and personal security.Therefore the leakage current for suppressing non-isolated grid-connected inverter becomes and ground Study carefully one of focus.
Have non-isolation type single-phase photovoltaic grid-connected inverter at present and be successfully applied to commercial sources, such as the Sunny of SMA companies Mini Central series photovoltaic inverters.But these structures are all based on the modified topology of single H bridges, are primarily adapted for use in small work( Rate occasion.And photovoltaic DC-to-AC converter of future generation needs to reach higher power grade and efficiency, therefore multi-electrical level inverter becomes Main study subject.The spy that there is cascaded H-bridges multi-electrical level inverter modularization easily to expand, cost is low and output voltage quality is high Point, and its DC side can be independently-powered by photovoltaic battery panel, and turning into its independent MPPT maximum power point tracking (MPPT) control can Can, thus cascaded H-bridges structure becomes the photovoltaic DC-to-AC converter structure of most prospect.Meanwhile cascaded H-bridges grid-connected photovoltaic inverter Leakage current also becomes a major issue in its application.
Some existing achievements of drain current suppressing on cascaded H-bridges grid-connected photovoltaic inverter at present, such as entitled " Analysis and suppression of leakage current in cascaded-multilevel-inverter based PV systems,”Y.Zhou and H.Li,《IEEE Trans.Power Electron.》, 2014,29 (10), 5265-5277 (" cascade connection multi-level photovoltaic inverter leakage current is analyzed and suppressed ",《IEEE journals-power electronics periodical》, 2014 volume 29 10th phase page 5265-5277) article；This article proposes two kinds of leakage current hardware Restrain measurements, is in DC side and AC point Passive filter that Cai Yong be not different, but the program has the following disadvantages：
1) passive filter is mainly made up of inductance and electric capacity, using can greatly increase in circuit inverter volume, Weight and cost, while reduce the energy conversion efficiency of inverter；
2) leakage current harmonic wave scope is wider, and by such environmental effects, makes filter parameter design process complex；
3) Cascade H bridge inverter actual operating frequency is relatively low, and the major harmonic frequency of its leakage current is relatively low, causes to filter The drain current suppressing effect of device is unsatisfactory.
Entitled " Hybrid Multicarrier Modulation to Reduce Leakage Current in a Transformerless Cascaded Multilevel Inverter for Photovoltaic Systems ", Rajasekar Selvamuthukumaran, Abhishek Garg, and Rajesh Gupta,《IEEE Transactions on Power Electron》, 2015,30 (4), 1779-1783 (" adjust by the mixing for reducing non-isolation type photovoltaic inverter leakage current System strategy ",《IEEE journals-power electronics periodical》, the 4th 1779-1783 pages of the phase of volume 30 in 2015) article；This article proposes A kind of modulation strategy for the two H bridge cascaded inverters realized based on two carrier waves, the deficiency of this method are as follows：
1) modulator approach can not suppress to flow into the leakage current of power network, can not improve grid-connected current quality；
2) two stacking carrier waves with phase are the method use, but 180 ° of phase shift is needed every half of power frequency period carrier wave, This undoubtedly adds hardware and realizes difficulty.
3) modulator approach is only applicable to two module-cascade inverters, without versatility.
As can be seen here, prior art can not be in the case where not increasing extra cost and not influenceing grid-connected current quality, preferably Solves the current leakage of bridge Cascade H bridge inverter.
The content of the invention
The technical problem to be solved in the present invention proposes a kind of do not need additionally to overcome problems of the prior art Hardware, the leakage current for flowing into power network can be eliminated, and suppress single module leakage current, and the suppression H bridges that implementation is simple and easy The modulator approach of cascaded inverter leakage current.
In order to complete the purpose of the present invention, the present invention proposes a kind of modulation methods of suppression H bridge cascaded inverter leakage currents Method, including level synthesis mode；The key step of this modulator approach is as follows：
Step 1, if H bridges cascaded inverter is made up of n H bridge module, each H bridge modules DC voltage is identical, and is designated as Vdc, by the on off state of each H bridge modules by switch function SaiAnd SbiRepresent,
Wherein,
N=2k, k are the integer more than 1；
SaiFor module i bridge arms a switch function, SbiFor module i bridge arms b switch function, and meet：
Step 2, the H bridge cascaded inverters according to step 1, module i and module (n-i+1) are formed into module i, definition Module 1 to module (k-1) is power frequency module, and module n/2 is high frequency module；Module i on off state is by one group of switch letter simultaneously Number (SAi,SBi,SA (n-i+1),Sb(n-i+1)) represent；
Step 3, according to the module group technology of step 2, power frequency module only exports tri- kinds of level of -2Vdc, 0 and 2Vdc；It is high Five kinds of frequency module output -2Vdc,-Vdc, 0, Vdc and 2Vdc level；
Step 4, each module working method according to step 3, level, power frequency mould are planted to make inverter export (2n+1) The switch combination mode of group is as follows：
For power frequency module i, if during -2*i≤(n*Vref)≤2*i, power frequency module i output zero levels；If (n* Vref)>During 2*i, power frequency module i outputs 2Vdc；(if n*Vref)<During -2*i, power frequency module i outputs -2Vdc；
If simultaneously during -2≤(n*Vref)≤2, Vr=n*Vref；If 2*i<(n*Vref)≤(2*i+2) (i= 1st, 2 ... k-1) when, then Vr=(n*Vref-2i)；(if -2*i-2)≤(n*Vref)<When (- 2*i) (i=1,2 ... k-1), then Vr=(n*Vref+2i+2)；
Wherein, Vref is raw modulation ripple, and meets -1≤Vref≤1；Vr is revised modulating wave；
Step 5, each module working method according to step 3, level, high frequency mould are planted to make inverter export (2n+1) The switch combination mode of group is as follows：
If 0≤Vr<When Vc1 and Vref >=0, high frequency module output zero level；
If Vc1≤Vr<When Vc2 and Vref >=0, high frequency module output Vdc；
If when Vr >=Vc2 and Vref >=0, high frequency module output 2Vdc；
If Vr >=Vc2 and Vref<When 0, high frequency module output zero level；
If Vc1≤Vr<Vc2 and Vref<When 0, high frequency module output-Vdc；
If Vr<Vc1 and Vref<When 0, high frequency module output -2Vdc；
Wherein, Vc1, Vc2 are laminated carrier triangular carrier waves, and 2 >=Vc2 >=1 >=Vc1 >=0 for two；
Preferably, the working method of power frequency module described in step 3 is：
2Vdc level is produced by off state 1010, on off state 0101 produces -2Vdc level, in modulating wave positive half period 0 level is produced by off state 1100, and 0 level is produced by off state 0011 in modulating wave negative half-cycle.
Preferably, the working method of high frequency module described in step 3 is：
2Vdc level is produced by off state 1010, on off state 1000 or 1110 produces Vdc level, on off state 1100 Or 0011 produce 0 level, the generation-Vdc level of on off state 0001 or 0111, on off state 0101 produces -2Vdc level.
Preferably, the switch combination mode of high frequency module described in step 5 is according to the minimum requirement of switch motion number Selecting switch state is to export required level.
Preferably, the stacking triangular carrier that triangular carrier is two same-phases is laminated described in step 5.
Preferably, the stacking triangular carrier that triangular carrier is two antiphases is laminated described in step 5.
It is as follows relative to prior art, beneficial effects of the present invention：
1st, extra hardware is not needed, the volume, weight and cost of inverter will not be increased, while inverter will not be reduced Energy conversion efficiency.
2nd, the leakage current for flowing into power network can be eliminated, improves power network current quality；Single module leakage current can be suppressed simultaneously, Reduce system loss and electromagnetic interference.
3rd, power frequency module working frequency is relatively low, reduces the switching loss of inverter.
4th, suitable for any even number H bridge cascaded inverters.
Brief description of the drawings
Fig. 1 is single-phase H bridges tandem photovoltaic combining inverter schematic diagram.
Fig. 2 is module packet mode schematic diagram.
Fig. 3 is power frequency module fundamental diagram.
Fig. 4 is high frequency module using the fundamental diagram with phase carrier wave.
Fig. 5 is the fundamental diagram that high frequency module uses phase inverted carrier.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples The present invention is described in more detail.
The modulator approach of suppression H bridge cascaded inverter leakage currents disclosed by the invention is applied to single-phase non-isolated H bridges cascade Photovoltaic parallel in system, systematic schematic diagram are as shown in Figure 1.In Fig. 1, each module is H bridge structures, and p bridge arms are exported containing two, Its bridge arm a be connected to upper level module or with inductance L1Connection, bridge arm b be connected to next stage module or with inductance L2Connection.Institute There is the AC series connection output of module, through two filter inductance L1And L2It is connected to power network Eg.Each module DC side is by photovoltaic electric Pond plate power supply, DC voltage Vdc.CpviIt is module i photovoltaic panel parasitic capacitance.
The on off state of each module is by switch function SaiAnd SbiRepresent, wherein,
SaiFor module i bridge arms a switch function, SbiFor module i bridge arms b switch function, and meet：
For single-phase H bridges tandem photovoltaic combining inverter shown in Fig. 1, suppression H bridges cascaded inverter leakage disclosed by the invention The basic step of the modulator approach of electric current is as follows：
Referring to Fig. 1, Fig. 2, Fig. 3, Fig. 4 and Fig. 5.
Step 1, if H bridges cascaded inverter is made up of n H bridge module, each H bridge modules DC voltage is identical, and is designated as Vdc, by the on off state of each H bridge modules by switch function SaiAnd SbiRepresent,
Wherein,
N=2k, k are the integer more than 1；
SaiFor module i bridge arms a switch function, SbiFor module i bridge arms b switch function, and meet：
Step 2, the H bridge cascaded inverters according to step 1, module i and module (n-i+1) are formed into module i, definition Module 1 to module (k-1) is power frequency module, and module n/2 is high frequency module；Module i on off state is by one group of switch letter simultaneously Number (SAi,SBi,SA (n-i+1),Sb(n-i+1)) represent；
Step 3, according to the module group technology of step 2, power frequency module only exports tri- kinds of level of -2Vdc, 0 and 2Vdc；It is high Five kinds of frequency module output -2Vdc,-Vdc, 0, Vdc and 2Vdc level；
The working method of the power frequency module is：2Vdc level is produced by off state 1010, on off state 0101 produces- 2Vdc level, 0 level is produced by off state 1100 in modulating wave positive half period, and in modulating wave negative half-cycle by off state 0011 produces 0 level.
The working method of the high frequency module is：2Vdc level is produced by off state 1010, on off state 1000 or 1110 produce Vdc level, and on off state 1100 or 0011 produces 0 level, the generation-Vdc level of on off state 0001 or 0111, opened Off status 0101 produces -2Vdc level.
Step 4, each module working method according to step 3, level, power frequency mould are planted to make inverter export (2n+1) The switch combination mode of group is as follows：
For power frequency module i, if during -2*i≤(n*Vref)≤2*i, power frequency module i output zero levels；If (n* Vref)>During 2*i, power frequency module i outputs 2Vdc；(if n*Vref)<During -2*i, power frequency module i outputs -2Vdc；
If simultaneously during -2≤(n*Vref)≤2, Vr=n*Vref；If 2*i<(n*Vref)≤(2*i+2) (i= 1st, 2 ... k-1) when, then Vr=(n*Vref-2i)；(if -2*i-2)≤(n*Vref)<When (- 2*i) (i=1,2 ... k-1), then Vr=(n*Vref+2i+2)；
Wherein, Vref is raw modulation ripple, and meets -1≤Vref≤1；Vr is revised modulating wave；
Step 5, each module working method according to step 3, level, high frequency mould are planted to make inverter export (2n+1) The switch combination mode of group is as follows：
If 0≤Vr<When Vc1 and Vref >=0, high frequency module output zero level；
If Vc1≤Vr<When Vc2 and Vref >=0, high frequency module output Vdc；
If when Vr >=Vc2 and Vref >=0, high frequency module output 2Vdc；
If Vr >=Vc2 and Vref<When 0, high frequency module output zero level；
If Vc1≤Vr<Vc2 and Vref<When 0, high frequency module output-Vdc；
If Vr<Vc1 and Vref<When 0, high frequency module output -2Vdc；
Wherein, Vc1, Vc2 are laminated carrier triangular carrier waves, and 2 >=Vc2 >=1 >=Vc1 >=0 for two.
The switch combination mode of the high frequency module be according to the minimum requirement selecting switch state of switch motion number with Level needed for output.
The stacking triangular carrier be the stacking triangular carrier of two same-phases or be two antiphases stacking triangle Carrier wave.
With reference to specific embodiment, the present invention is described in more detail.
Embodiment 1
Step 1, the Cascade H bridge inverter being made up of the individual H bridge modules of 4 (k=2), each module DC voltage is identical, and remembers For Vdc, by the on off state of each module by switch function SaiAnd SbiRepresent,
Wherein, SaiFor module i bridge arms a switch function, SbiFor module i bridge arms b switch function, and meet：
Step 2, the 4 module-cascade inverters according to step 1, module i and module (5-i) are formed into module i, definition Module 1 is power frequency module, and module 2 is high frequency module；Module i on off state is by one group of switch function (S simultaneouslyaiSbiSa(5-i) Sb(5-i)) represent；
Step 3, according to the module group technology of step 2, power frequency module only exports tri- kinds of level of -2Vdc, 0 and 2Vdc, tool Body running mode is to produce 2Vdc level by off state 1010, and on off state 0101 produces -2Vdc level, in modulating wave just half Cycle produces 0 level by off state 1100, and produces 0 level by off state 0011 in modulating wave negative half-cycle；High frequency mould Five kinds of group output -2Vdc,-Vdc, 0, Vdc and 2Vdc level, specific works mode are to produce 2Vdc electricity by off state 1010 Flat, on off state 1000 or 1110 produces Vdc level, and on off state 1100 or 0011 produces 0 level, on off state 0001 or 0111 generation-Vdc level, on off state 0101 produce -2Vdc level；
Step 4, each module working method according to step 3, to make inverter export 9 kinds of level, power frequency module Switch combination mode is as follows：
For power frequency module i, if during -2*i≤(4*Vref)≤2*i, power frequency module i output zero levels；If (4* Vref)>During 2*i, power frequency module i outputs 2Vdc；(if 4*Vref)<During -2*i, power frequency module i outputs -2Vdc；
If simultaneously during -2≤(4*Vref)≤2, Vr=4*Vref；If 2*i<(4*Vref)≤(2*i+2) (i= 1st, 2 ... k-1) when, then Vr=(4*Vref-2i)；(if -2*i-2)≤(4*Vref)<When (- 2*i) (i=1,2 ... k-1), then Vr=(4*Vref+2i+2)；
Wherein, Vref is raw modulation ripple, and meets -1≤Vref≤1；Vr is revised modulating wave；
Step 5, each module working method according to step 3, to make inverter export 9 level, high frequency module is opened It is as follows to close combination：
If 0≤Vr<When Vc1 and Vref >=0, high frequency module output zero level；
If Vc1≤Vr<When Vc2 and Vref >=0, high frequency module output Vdc；
If when Vr >=Vc2 and Vref >=0, high frequency module output 2Vdc；
If Vr >=Vc2 and Vref<When 0, high frequency module output zero level；
If Vc1≤Vr<Vc2 and Vref<When 0, high frequency module output-Vdc；
If Vr<Vc1 and Vref<When 0, high frequency module output -2Vdc；
Simultaneously according to the minimum requirement selecting switch state of switch motion number to export required level；
Wherein, Vc1, Vc2 are that two same-phases are laminated carrier triangular carrier wave, and 2 >=Vc2 >=1 >=Vc1 >=0；
The realization principle figure of the present embodiment is as shown in figures 1-4.
Embodiment 2
Power frequency module working method is same as Example 1 in the present embodiment, and high frequency module is anti-phase using modulating wave and two The stacking triangular carrier of position compares, and manner of comparison is identical with embodiment.Fundamental diagram such as Fig. 5 institutes of the present embodiment high frequency module Show.
Finally, corresponding drive signal is produced according to the switch function of obtained each module, it is former according to the distribution of inverter Then distribute to corresponding switching tube.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles of the invention etc., all should be included Within protection scope of the present invention.

Claims (6)

1. a kind of modulator approach of suppression H bridge cascaded inverter leakage currents, including level synthesis mode, it is characterised in that this tune The key step of method processed is as follows：
Step 1, if H bridges cascaded inverter is made up of n H bridge module, each H bridge modules export bridge arms containing two, wherein Bridge arm a be connected to upper level module or with inductance L1Connection, bridge arm b be connected to next stage module or with inductance L2Connection；All H The AC series connection output of bridge module, through two filter inductance L1And L2It is connected to power network Eg；Each H bridge module DC voltage phases Together, and Vdc is designated as, by the on off state of each H bridge modules by switch function SaiAnd SbiRepresent；
Wherein,
N=2k, k are the integer more than 1；
SaiFor module i bridge arms a switch function, SbiFor module i bridge arms b switch function, and meet：
；
Step 2, the H bridge cascaded inverters according to step 1, by module i and module（n-i+1）Module i is formed, defines module 1 to module（k-1）For power frequency module, module n/2 is high frequency module；Module i on off state is by one group of switch function simultaneously (SAi,SBi,SA (n-i+1),Sb(n-i+1)) represent；
Step 3, according to the module group technology of step 2, power frequency module only exports tri- kinds of level of -2Vdc, 0 and 2Vdc；High frequency mould Five kinds of group output -2Vdc,-Vdc, 0, Vdc and 2Vdc level；
Step 4, according to each module working method of step 3, level, the switch of power frequency module are planted to make inverter export (2n+1) Combination is as follows：
For power frequency module i, if during -2*i≤(n*Vref)≤2*i, power frequency module i output zero levels；(if n*Vref)> During 2*i, power frequency module i outputs 2Vdc;(if n*Vref)<During -2*i, power frequency module i outputs -2Vdc;
If simultaneously during -2≤(n*Vref)≤2, Vr=n*Vref；If 2*i<(n*Vref)≤(2*i+2)(i=1、2…k- 1) when, then Vr=（n*Vref-2i）；If（-2*i-2）≤(n*Vref)<When (- 2*i) (i=1,2 ... k-1), then Vr=（n* Vref+2i+2）;
Wherein, Vref is raw modulation ripple, and meets -1≤Vref≤1；Vr is revised modulating wave；
Step 5, according to each module working method of step 3, level, the switch of high frequency module are planted to make inverter export (2n+1) Combination is as follows：
If 0≤Vr<When Vc1 and Vref >=0, high frequency module output zero level;
If Vc1≤Vr<When Vc2 and Vref >=0, high frequency module output Vdc;
If when Vr >=Vc2 and Vref >=0, high frequency module output 2Vdc;
If Vr >=Vc2 and Vref<When 0, high frequency module output zero level;
If Vc1≤Vr<Vc2 and Vref<When 0, high frequency module output-Vdc;
If Vr<Vc1 and Vref<When 0, high frequency module output -2Vdc;
Wherein, Vc1, Vc2 are laminated carrier triangular carrier waves, and 2 >=Vc2 >=1 >=Vc1 >=0 for two.
A kind of 2. modulator approach of suppression H bridge cascaded inverter leakage currents according to claim 1, it is characterised in that step The working method of power frequency module is described in rapid 3：
2Vdc level is produced by off state 1010, on off state 0101 produces -2Vdc level, in modulating wave positive half period by opening Off status 1100 produces 0 level, and produces 0 level by off state 0011 in modulating wave negative half-cycle.
A kind of 3. modulator approach of suppression H bridge cascaded inverter leakage currents according to claim 1, it is characterised in that step The working method of high frequency module is described in rapid 3：
2Vdc level is produced by off state 1010, on off state 1000 or 1110 produces Vdc level, on off state 1100 or 0011 produces 0 level, the generation-Vdc level of on off state 0001 or 0111, and on off state 0101 produces -2Vdc level.
A kind of 4. modulator approach of suppression H bridge cascaded inverter leakage currents according to claim 1, it is characterised in that step The switch combination mode of high frequency module described in rapid 5 is to export according to the minimum requirement selecting switch state of switch motion number Required level.
A kind of 5. modulator approach of suppression H bridge cascaded inverter leakage currents according to claim 1, it is characterised in that step The stacking carrier triangular carrier wave that carrier triangular carrier wave is two same-phases is laminated described in rapid 5.
A kind of 6. modulator approach of suppression H bridge cascaded inverter leakage currents according to claim 1, it is characterised in that step The stacking carrier triangular carrier wave that carrier triangular carrier wave is two antiphases is laminated described in rapid 5.
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