CN105509937A - Pressure sensor, pressure detection method and manufacturing process - Google Patents

Pressure sensor, pressure detection method and manufacturing process Download PDF

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Publication number
CN105509937A
CN105509937A CN201610008817.2A CN201610008817A CN105509937A CN 105509937 A CN105509937 A CN 105509937A CN 201610008817 A CN201610008817 A CN 201610008817A CN 105509937 A CN105509937 A CN 105509937A
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China
Prior art keywords
circuit layer
circuit
pressure sensor
substrate
lower substrate
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Granted
Application number
CN201610008817.2A
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Chinese (zh)
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CN105509937B (en
Inventor
金虎
尉长虹
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Changzhou Two-Dimension Photoelectric Technology Co Ltd
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Changzhou Two-Dimension Photoelectric Technology Co Ltd
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Priority to CN201610008817.2A priority Critical patent/CN105509937B/en
Publication of CN105509937A publication Critical patent/CN105509937A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225Measuring circuits therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type

Abstract

The invention discloses a pressure sensor, a pressure detection method and a manufacturing process. The pressure sensor comprises an upper substrate, a lower substrate, a body circuit layer and extraction electrodes. The upper substrate and the lower substrate are prepared by elastic organic materials, wherein one side of the upper substrate and one side of the lower substrate are of a same three-dimensional structure, and are opposite; the body circuit layer is flexible, and is provided with a conductive line layer prepared by conductive materials; the body circuit layer is clamped between the upper substrate and the lower substrate, and covers the three-dimensional structures of the upper substrate and the lower substrate according to a function plane circuitous pattern substrate; two ends of the body circuit layer respectively lead out the extraction electrodes. According to the invention, base material stereoscopic deformation is generated through the force applied to the flexible substrate surface of the sensor, and meanwhile, the stereoscopic circuit structure in base materials forms stereoscopic deformation, and thereby resistance change is formed; according to resistance change, pressure values are calculated; the pressure sensor has the characteristics of simple structure, accurate measuring result and high sensitivity.

Description

A kind of pressure sensor, pressure detection method and manufacturing process
Technical field
The present invention relates to a kind of pressure sensor, pressure detection method and manufacturing process.
Background technology
Pressure transducer is widely used in intelligence manufacture industry, but existing pressure transducer, sensing mode and inner structure are too complicated, need very accurate electronic control system, production cost is too high, and size thickness etc. is all very restricted, cannot make ultra-thin pressure transducer, sensitivity is also very limited, and the slight pressure for precision cannot accurately record.
Summary of the invention
First object of the present invention is to provide a kind of pressure sensor of energy Sensitive Detection slight pressure.
The technical scheme realizing the present invention's first object is a kind of pressure sensor, comprises substrate, lower substrate, body circuit layer and extraction electrode; Described upper substrate and lower substrate are elastic organic material, and its one side is identical spatial structure, and has the one side of spatial structure to be oppositely arranged; Described body circuit layer is flexible, it is arranged conductive material and makes conductive circuit layer; Described body circuit layer is folded between substrate and lower substrate, uniform fold in the spatial structure of upper substrate and lower substrate, and at the two ends of body circuit layer extraction electrode respectively.
The cross section of described upper substrate and lower suprabasil spatial structure is continuous print V-arrangement; Or cross section is continuous print U-shaped; Or cross section is continuous print sinusoidal waveform; Or spatial structure is equally distributed triangular pyramid; Or spatial structure is equally distributed measure-alike sphere stereoscopic structure; Or the combination of aforementioned spatial structure; Aforementioned spatial structure is designed to measure-alike or that size is different continuous structure according to functional requirement.
The elastic modulus of described upper substrate and lower substrate is 0.002 ~ 0.05Gpa, and Poisson ratio is 0.1 ~ 1, and thickness is for being 0.02 ~ 5mm.
The conductive circuit layer of described body circuit layer is graphene conductive circuit; Or carbon nano-tube carbon-based conductive circuit; Or metal conductive oxide circuit; Or metal and carbon back composite conducting circuit; Or organic conductive material conducting wire; Or the composite conducting circuit of organic conductive material and carbon-based material; Or organic conductive material and metal composite conducting wire.
Described extraction electrode is the electrode of plating conducting film at the bottom of elasticity carbon back conductive electrode or metal electrode or FPC electrode or organic group.
The conducting wire of described body circuit layer comprises power supply signal circuit, signal acquisition circuit, D/A converting circuit, MCU governor circuit and signal output apparatus; Described power supply signal circuit is that MCU governor circuit is powered, for pressure sensor provides signal source; Described signal acquisition circuit gathers the resistance change that main body circuit deformation brings; Described D/A converting circuit carries out digital-to-analog conversion to the data of signal acquisition circuit collection, and these data are passed to MCU governor circuit and analyzes, analysis result exports to terminal device master control by signal output apparatus.
Second object of the present invention is to provide a kind of manufacture method manufacturing pressure sensor.
The technical scheme realizing the present invention's second object is a kind of manufacture method of pressure sensor, comprises the following steps:
Step one: make lower substrate; Adopting has the film of required spatial structure to be mould, and elastic organic material being filled into die for molding is that one side has the thickness of spatial structure to be the substrate of 0.02 ~ 5mm;
Step 2: make flexible body circuit layer;
Step 3: body circuit layer is transferred in lower substrate;
Step 4: at body circuit layer two ends extraction electrode;
Step 5: the method adopting step one same makes upper substrate, upper substrate is covered on body circuit layer; Or on body circuit layer, cover elastic organic material, substrate in formation; Described electrode part exposes pressure sensor.
Transfer method in described step 3 is: fish for floating for the body circuit layer having etched conductive circuit layer in the solution and be placed in lower substrate; Or use double faced adhesive tape to transfer in lower substrate; Or use water-based glue to transfer in lower substrate.
In described step 4, the method for conducting resinl bonding or coating is adopted to make electrode; In described step 5, the method that body circuit layer covers elastic organic material is the method adopting spraying or roller coating or spin coating or printing or some glue, forms the elastic substrates that 0.02 ~ 5mm is thick; Hardness number is 0 ~ 20 degree.
3rd object of the present invention is to provide a kind of pressure detection method detecting the pressure sensor of slight pressure.
The technical scheme realizing the 3rd object of the present invention is a kind of pressure detection method of pressure sensor, and power supply signal circuit loads constant voltage or constant current or square-wave signal source to sensor; After sensor is under pressure, the deformation of main body circuit layer, described signal acquisition circuit gathers the resistance change that the deformation of main body circuit layer brings; Described D/A converting circuit carries out digital-to-analog conversion to the data of signal acquisition circuit collection, these data are passed to MCU governor circuit analyze, calculate change in resistance amount, according to the material characteristic parameter that base material type becomes, obtain force value by normal pressure calibration, force value exports to terminal device master control by signal output apparatus.
After have employed technique scheme, the present invention has following positive effect: (1) the present invention produces base material solid type by the strength being applied to the flexible substrates surface of sensor and becomes, base material solid type becomes the circuit structure being simultaneously arranged in the solid of base material and forms three-dimensional deformation, thus formation resistance variations, the power supply of constant current or constant voltage or square wave or other waveforms is loaded by electrode, namely measurement current change quantity or voltage variety can obtain resistance change, by the elastic modulus characteristic of Calculating material and the type variable of demarcation unit resistance variable quantity, the force value received can be calculated, structure is simple, measurement result is accurate, and it is highly sensitive.
(2) the present invention is by the characteristic of the spatial structure and substrate that regulate body circuit and thickness structure, can obtain the sensor of different pressures resolution.
(3) a preferred embodiment of the present invention is that body circuit adopts graphene film, conduct electricity very well, thickness is very thin, therefore ultra-thin pressure sensor can be obtained, and Graphene is very high to the sensitivity of pressure, the resolution of pressure sensor can measure the pressure of 0.01g ~ 200KG, achieves the detection to small pressure.
Accompanying drawing explanation
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation that the present invention presses rear deformation.
Fig. 3 is the circuit diagram of body circuit layer.
Attached number in the figure is:
Upper substrate 1, lower substrate 2, body circuit layer 3, power supply signal circuit 31, signal acquisition circuit 32, D/A converting circuit 33, MCU governor circuit 34, signal output apparatus 35, extraction electrode 4, terminal device master control 5.
Embodiment
(embodiment 1)
See Fig. 1, a kind of pressure sensor of the present embodiment, comprise substrate 1, lower substrate 2, body circuit layer 3 and extraction electrode 4; Upper substrate 1 and lower substrate 2 are elastic organic material, and its one side is identical spatial structure, and has the one side of spatial structure to be oppositely arranged; Body circuit layer 3 is flexible, it is arranged conductive material and makes conductive circuit layer; Body circuit layer 3 is folded between substrate 1 and lower substrate 2, uniform fold in the spatial structure of upper substrate 1 and lower substrate 2, and at the two ends of body circuit layer 3 extraction electrode 4 respectively.The cross section of the spatial structure in upper substrate 1 and lower substrate 2 is the measure-alike V-arrangement of continuous print; Or cross section is the measure-alike U-shaped of continuous print; Or cross section is the measure-alike sinusoidal waveform of continuous print; Or spatial structure is equally distributed measure-alike triangular pyramid; Say that spatial structure is equally distributed measure-alike sphere.The elastic modulus of upper substrate 1 and lower substrate 2 is 0.002 ~ 0.05Gpa, and Poisson ratio is 0.1 ~ 1, and thickness is for being 0.02 ~ 5mm, and hardness number is 0 ~ 20 degree.The conductive circuit layer of body circuit layer 3 is graphene conductive circuit; Or carbon nano-tube carbon-based conductive circuit; Or metal conductive oxide circuit; Or metal and carbon back composite conducting circuit; Or organic conductive material conducting wire; Or the composite conducting circuit of organic conductive material and carbon-based material; Or organic conductive material and metal composite conducting wire.Extraction electrode 4 is the electrode of plating conducting film at the bottom of elasticity carbon back conductive electrode or metal electrode or FPC electrode or organic group.
See Fig. 3, the conducting wire of body circuit layer 3 comprises power supply signal circuit 31, signal acquisition circuit 32, D/A converting circuit 33, MCU governor circuit 34 and signal output apparatus 35; Power supply signal circuit 31 is powered for MCU governor circuit 34, for pressure sensor provides signal source; Signal acquisition circuit 32 gathers the resistance change that main body circuit 3 deformation brings; The data that D/A converting circuit 33 pairs of signal acquisition circuits 32 gather carry out digital-to-analog conversion, and these data are passed to MCU governor circuit 34 and analyzes, analysis result exports to terminal device master control 5 by signal output apparatus 35.Power supply signal circuit 31 loads constant voltage or constant current or square-wave signal source to sensor; After sensor is under pressure (as shown in Figure 2, finger presses), main body circuit layer 3 deformation, signal acquisition circuit 32 gathers the resistance change that main body circuit layer 3 deformation brings; The data that D/A converting circuit 33 pairs of signal acquisition circuits 32 gather carry out digital-to-analog conversion, these data are passed to MCU governor circuit 34 analyze, calculate change in resistance amount, according to the material characteristic parameter that base material type becomes, obtain force value by normal pressure calibration, force value exports to terminal device master control 5 by signal output apparatus 35.
The manufacture method of pressure sensor, comprises the following steps:
Step one: make lower substrate 2; Adopting has the film of required spatial structure to be mould, and elastic organic material being filled into die for molding is that one side has the thickness of spatial structure to be the substrate of 0.02 ~ 5mm; Spatial structure shown in Fig. 1 is continuous print V-type.
Step 2: make flexible body circuit layer 3; Fish for floating for the body circuit layer 3 having etched conductive circuit layer in the solution and be placed in lower substrate 2; Or use double faced adhesive tape to transfer in lower substrate 2; Or use water-based glue to transfer in lower substrate 2;
Step 3: body circuit layer 3 is transferred in lower substrate 2;
Step 4: at body circuit layer 3 two ends extraction electrode 4; The method of conducting resinl bonding or coating is adopted to make electrode 4;
Step 5: the method adopting step one same makes upper substrate 1, covers on body circuit layer 3 by upper substrate 1; Or on body circuit layer 3, adopt the method for spraying or roller coating or spin coating or printing or some glue, form the elastic substrates that 0.02 ~ 5mm is thick, as upper substrate 1; Electrode 4 part exposes pressure sensor.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. a pressure sensor, is characterized in that: comprise substrate (1), lower substrate (2), body circuit layer (3) and extraction electrode (4); Described upper substrate (1) and lower substrate (2) are elastic organic material, and its one side is identical spatial structure, and has the one side of spatial structure to be oppositely arranged; Described body circuit layer (3) is flexible, it is arranged conductive material and makes conductive circuit layer; Described body circuit layer (3) is folded between substrate (1) and lower substrate (2), uniform fold in the spatial structure of upper substrate (1) and lower substrate (2), and at the two ends of body circuit layer (3) extraction electrode (4) respectively.
2. a kind of pressure sensor according to claim 1, is characterized in that: the cross section of the spatial structure in described upper substrate (1) and lower substrate (2) is continuous print V-arrangement; Or cross section is continuous print U-shaped; Or cross section is continuous print sinusoidal waveform; Or spatial structure is equally distributed triangular pyramid; Or spatial structure is equally distributed measure-alike sphere stereoscopic structure; Or the combination of aforementioned spatial structure; Aforementioned spatial structure is designed to measure-alike or that size is different continuous structure according to functional requirement.
3. a kind of pressure sensor according to claim 2, it is characterized in that: the elastic modulus of described upper substrate (1) and lower substrate (2) is 0.002 ~ 0.05Gpa, Poisson ratio is 0.1 ~ 1, and thickness is for being 0.02 ~ 5mm, and hardness number is 0 ~ 20 degree.
4. a kind of pressure sensor according to claim 3, is characterized in that: the conductive circuit layer of described body circuit layer (3) is graphene conductive circuit; Or carbon nano-tube carbon-based conductive circuit; Or metal conductive oxide circuit; Or metal and carbon back composite conducting circuit; Or organic conductive material conducting wire; Or the composite conducting circuit of organic conductive material and carbon-based material; Or organic conductive material and metal composite conducting wire.
5. a kind of pressure sensor according to claim 4, is characterized in that: described extraction electrode (4) is the electrode of plating conducting film at the bottom of elasticity carbon back conductive electrode or metal electrode or FPC electrode or organic group.
6. a kind of pressure sensor according to claim 5, is characterized in that: the conducting wire of described body circuit layer (3) comprises power supply signal circuit (31), signal acquisition circuit (32), D/A converting circuit (33), MCU governor circuit (34) and signal output apparatus (35); Described power supply signal circuit (31) is MCU governor circuit (34) power supply, for pressure sensor provides signal source; Described signal acquisition circuit (32) gathers the resistance change that main body circuit (3) deformation brings; Described D/A converting circuit (33) carries out digital-to-analog conversion to the data that signal acquisition circuit (32) gathers, these data are passed to MCU governor circuit (34) to analyze, analysis result exports to terminal device master control (5) by signal output apparatus (35).
7. manufacture a manufacture method for a kind of pressure sensor as claimed in claim 6, it is characterized in that comprising the following steps:
Step one: make lower substrate (2); Adopting has the film of required spatial structure to be mould, and elastic organic material being filled into die for molding is that one side has the thickness of spatial structure to be the substrate of 0.02 ~ 5mm;
Step 2: make flexible body circuit layer (3);
Step 3: body circuit layer (3) is transferred in lower substrate (2);
Step 4: at body circuit layer (3) two ends extraction electrode (4);
Step 5: the method adopting step one same makes upper substrate (1), upper substrate (1) is covered on body circuit layer (3); Or on body circuit layer (3), cover elastic organic material, substrate in formation (1); Described electrode (4) part exposes pressure sensor.
8. the manufacture method of a kind of pressure sensor according to claim 7, is characterized in that: the transfer method in described step 3 is: fish for floating for the body circuit layer (3) having etched conductive circuit layer in the solution and be placed in lower substrate (2); Or use double faced adhesive tape to transfer in lower substrate (2); Or use water-based glue to transfer in lower substrate (2).
9. the manufacture method of a kind of pressure sensor according to claim 8, is characterized in that: in described step 4, adopts the method for conducting resinl bonding or coating to make electrode (4); In described step 5, be the method adopting spraying or roller coating or spin coating or printing or some glue in the upper method covering elastic organic material of body circuit layer (3), form the elastic substrates that 0.02 ~ 5mm is thick.
10. a pressure detection method for a kind of pressure sensor as claimed in claim 6, is characterized in that: power supply signal circuit (31) loads constant voltage or constant current or square-wave signal source to sensor; After sensor is under pressure, main body circuit layer (3) deformation, described signal acquisition circuit (32) gathers the resistance change that main body circuit layer (3) deformation brings; Described D/A converting circuit (33) carries out digital-to-analog conversion to the data that signal acquisition circuit (32) gathers, these data are passed to MCU governor circuit (34) to analyze, calculate change in resistance amount, according to the material characteristic parameter that base material type becomes, obtain force value by normal pressure calibration, force value exports to terminal device master control (5) by signal output apparatus (35).
CN201610008817.2A 2016-01-07 2016-01-07 A kind of pressure sensor, pressure detection method and manufacturing process Active CN105509937B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106197775A (en) * 2016-08-31 2016-12-07 新港海岸(北京)科技有限公司 A kind of pressure transducer
CN107329601A (en) * 2016-04-28 2017-11-07 常州二维碳素科技股份有限公司 A kind of touch screen and touch-control system and control method
CN111189476A (en) * 2020-01-14 2020-05-22 中国农业大学 Flexible sensor and preparation method thereof
CN112179561A (en) * 2020-09-17 2021-01-05 五邑大学 Pressure sensor array calibration method, device and equipment

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Publication number Priority date Publication date Assignee Title
DE2602583A1 (en) * 1975-01-22 1976-07-29 Minnesota Mining & Mfg MEASURING DEVICE WORKING WITH PIEZOELECTRIC MATERIAL
WO2011103808A1 (en) * 2010-02-24 2011-09-01 香港纺织及成衣研发中心有限公司 Flexible pressure sensor and flexible pressure sensing array
CN102713546A (en) * 2009-10-14 2012-10-03 国立大学法人东北大学 Sheet-like tactile sensor system
CN105094441A (en) * 2015-08-20 2015-11-25 宸鸿科技(厦门)有限公司 Pressure sensing device
CN205562090U (en) * 2016-01-07 2016-09-07 常州二维光电科技有限公司 Pressure sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2602583A1 (en) * 1975-01-22 1976-07-29 Minnesota Mining & Mfg MEASURING DEVICE WORKING WITH PIEZOELECTRIC MATERIAL
CN102713546A (en) * 2009-10-14 2012-10-03 国立大学法人东北大学 Sheet-like tactile sensor system
WO2011103808A1 (en) * 2010-02-24 2011-09-01 香港纺织及成衣研发中心有限公司 Flexible pressure sensor and flexible pressure sensing array
CN105094441A (en) * 2015-08-20 2015-11-25 宸鸿科技(厦门)有限公司 Pressure sensing device
CN205562090U (en) * 2016-01-07 2016-09-07 常州二维光电科技有限公司 Pressure sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107329601A (en) * 2016-04-28 2017-11-07 常州二维碳素科技股份有限公司 A kind of touch screen and touch-control system and control method
CN106197775A (en) * 2016-08-31 2016-12-07 新港海岸(北京)科技有限公司 A kind of pressure transducer
CN111189476A (en) * 2020-01-14 2020-05-22 中国农业大学 Flexible sensor and preparation method thereof
CN111189476B (en) * 2020-01-14 2021-04-27 中国农业大学 Flexible sensor and preparation method thereof
CN112179561A (en) * 2020-09-17 2021-01-05 五邑大学 Pressure sensor array calibration method, device and equipment
CN112179561B (en) * 2020-09-17 2022-09-30 五邑大学 Pressure sensor array calibration method, device and equipment

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