CN102843031A - Basic circuit of improved modular multilevel converter - Google Patents
Basic circuit of improved modular multilevel converter Download PDFInfo
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- CN102843031A CN102843031A CN2012102891393A CN201210289139A CN102843031A CN 102843031 A CN102843031 A CN 102843031A CN 2012102891393 A CN2012102891393 A CN 2012102891393A CN 201210289139 A CN201210289139 A CN 201210289139A CN 102843031 A CN102843031 A CN 102843031A
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Abstract
The invention discloses a basic circuit of an improved modular multilevel converter in the technical field of power transmission and distribution. The technical scheme includes that the basic circuit comprises a first insulted gate bipolar transistor (IGBT), a second IGBT, a first diode, a second diode, a first capacitor, a second capacitor, and an H-shaped bridge biswitch circuit. The basic circuit is applied to the modular multilevel converter, not only are stability of direct current voltage and balance of capacitance achieved, but also the number of insulated gate bipolar transistors (IGBTs) and the basic circuits is reduced and accordingly floor space of a converter station is reduced.
Description
Technical field
The invention belongs to the power transmission and distribution technical field, relate in particular to a kind of improved modularization multi-level converter tandem circuit.
Background technology
Modularization multi-level converter high voltage direct current transmission MMC-HVDC is the important branch of voltage source converter high voltage direct current transmission VSC-HVDC in many level field.Compare with traditional direct current transportation, voltage source converter high voltage direct current transmission VSC-HVDC has following major advantage:
(1) need not to supply power for passive network from the commutation electric current of being held AC system;
(2) can realize meritorious and idle independently control fast, the meritorious and idle four quadrant running of realizing;
(3) can play the effect of Static Synchronous compensator STATCOM for AC system provides idle fast support, Static Synchronous compensator STATCOM is the important component part of flexible AC transmitting system FACTS, but dynamic passive compensation.
Compare with two level or three-level voltage source converter high voltage direct current transmission VSC-HVDC, modularization multi-level converter high voltage direct current transmission MMC-HVDC has following major advantage:
(1) dilatation is convenient in modularized design;
(2) switching frequency is lower, and switching loss is less, and equivalent switching frequency is higher;
(3) converter AC side outlet voltage harmonic content is few, need not alternating current filter.
In view of modularization multi-level converter MMC topology has above good characteristic; Voltage with multiple levels source converter high voltage direct current transmission VSC-HVDC system in building or planning adopts modularization multi-level converter MMC topology mostly both at home and abroad; But modularization multi-level converter MMC topology needs a large amount of insulated gate bipolar transistor IGBTs; When the system voltage grade was identical, the quantity of the insulated gate bipolar transistor IGBT that modularization multi-level converter MMC uses was the twice of two level voltage source converters.
Summary of the invention
Problem to the use amount aspect of insulated gate bipolar transistor IGBT among the modularization multi-level converter high voltage direct current transmission MMC-HVDC that describes in the top technical background exists the present invention proposes a kind of improved modularization multi-level converter tandem circuit.
Technical scheme of the present invention is; A kind of improved modularization multi-level converter tandem circuit; It is characterized in that said tandem circuit comprises first insulated gate bipolar transistor, second insulated gate bipolar transistor, first diode, second diode, first electric capacity, second electric capacity and H bridge biswitch circuit;
Wherein, parallelly connected after said first insulated gate bipolar transistor and said first electric capacity and second capacitances in series with second insulated gate bipolar transistor;
Said first diode and the said first insulated gate bipolar transistor inverse parallel are used to protect first insulated gate bipolar transistor;
Said second diode and the said second insulated gate bipolar transistor inverse parallel are used to protect second insulated gate bipolar transistor;
Said H bridge biswitch circuit is connected with the negative pole of first electric capacity with output voltage is anodal respectively.
Said H bridge biswitch circuit comprises the 3rd diode, the 4th diode, the 5th diode, the 6th diode and the 3rd insulated gate bipolar transistor; Said the 3rd diode and the series connection of the 4th diode; Said the 5th diode and the series connection of the 6th diode; The negative pole of said the 3rd diode is connected with the negative pole of said the 6th diode and the collector electrode of the 3rd insulated gate bipolar transistor respectively; The positive pole of said the 4th diode is connected with the positive pole of said the 5th diode and the emitter of the 3rd insulated gate bipolar transistor respectively; The positive pole of said the 3rd diode is connected with output head anode; The positive pole of said the 6th diode is connected with the first electric capacity negative pole; Said H bridge biswitch circuit is used to realize H bridge biswitch circuit two-way admittance.
Said tandem circuit output comprises three kinds of level states.
Said tandem circuit comprises four kinds of running statuses.
The invention has the beneficial effects as follows; A kind of improved modularization multi-level converter tandem circuit is applied in the modular multilevel voltage source converter; Not only can realize the balance of the stable and electric capacity of direct voltage; And reduced the quantity of insulated gate bipolar transistor IGBT quantity and tandem circuit, thereby reduced the floor space of current conversion station.
Description of drawings
Fig. 1 is the exemplary topology diagram of modularization multi-level converter MMC;
Fig. 2 is the circuit diagram of the half-bridge tandem circuit that uses among the modularization multi-level converter high voltage direct current transmission MMC-HVDC;
Fig. 3 is the circuit diagram of a kind of improved modularization multi-level converter tandem circuit provided by the invention;
Fig. 4 is the isoboles of the circuit diagram of a kind of improved modularization multi-level converter tandem circuit provided by the invention;
Fig. 5 is the direction of current flow of the different operating state of a kind of improved modularization multi-level converter tandem circuit provided by the invention; Wherein, (a) expression operational mode 1; (b) expression operational mode 2; (c) expression operational mode 3; (d) expression operational mode 4;
Fig. 6 is the output voltage figure of a kind of improved modularization multi-level converter tandem circuit provided by the invention.
Wherein, n tandem circuit of SMn-; U
Dc-modularization multi-level converter MMC direct voltage; VT1-first insulated gate bipolar transistor; VT2-second insulated gate bipolar transistor; VD1-first diode; VD2-second diode; U
C-capacitance voltage; The UsM-output voltage; The isM-output current; VT3-the 3rd insulated gate bipolar transistor; C
1-the first electric capacity; C
2-the second electric capacity; Uc1-first capacitor C
1Magnitude of voltage; Uc2-second capacitor C
2Magnitude of voltage.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment is elaborated.Should be emphasized that following explanation only is exemplary, rather than in order to limit scope of the present invention and application thereof.
Fig. 1 is the exemplary topology diagram of modularization multi-level converter MMC.Among Fig. 1, the topological structure of modular multilevel voltage source converter (MMC), every have up and down two brachium pontis mutually, and each brachium pontis is made up of n tandem circuit.
Fig. 2 is the circuit diagram of the half-bridge tandem circuit that uses among the modularization multi-level converter high voltage direct current transmission MMC-HVDC.Among Fig. 2, the half-bridge tandem circuit is by two insulated gate bipolar transistor IGBTs, and two diodes and an electric capacity constitute, and the voltage of single tandem circuit output can be capacitance voltage U
COr 0, therefore can export 1,0 two kind of level.If export 2,1,0 three kinds of level, then need two tandem circuit actings in conjunction, need 4 insulated gate bipolar transistors thereby can draw two tandem circuits.
Fig. 3 is the circuit diagram of a kind of improved modularization multi-level converter tandem circuit provided by the invention.Among Fig. 3, tandem circuit provided by the invention comprises the first insulated gate bipolar transistor VT1, the second insulated gate bipolar transistor VT2, the first diode VD1, the second diode VD2, first capacitor C
1, second capacitor C
2With H bridge biswitch circuit; Said first insulated gate bipolar transistor VT1 and said first capacitor C
1With second capacitor C
2The series connection back and the second insulated gate bipolar transistor VT2 inverse parallel; Said first diode VD1 and the said first insulated gate bipolar transistor VT1 inverse parallel are used to protect the first insulated gate bipolar transistor VT1; Said second diode VD2 and the said second insulated gate bipolar transistor VT2 inverse parallel are used to protect the second insulated gate bipolar transistor VT2; Said H bridge biswitch circuit is anodal and first capacitor C with output voltage U sM respectively
1Negative pole connects;
Said H bridge biswitch circuit comprises the 3rd diode, the 4th diode, the 5th diode, the 6th diode and the 3rd insulated gate bipolar transistor VT3; Said the 3rd diode and the series connection of the 4th diode; Said the 5th diode and the series connection of the 6th diode; The negative pole of said the 3rd diode is connected with the negative pole of said the 6th diode and the collector electrode of the 3rd insulated gate bipolar transistor VT3 respectively; The positive pole of said the 4th diode is connected with the positive pole of said the 5th diode and the emitter of the 3rd insulated gate bipolar transistor VT3 respectively; The positive pole of said the 3rd diode is connected with output head anode; The positive pole of said the 6th diode is connected with the first electric capacity negative pole; Said H bridge biswitch circuit is used to realize H bridge biswitch circuit two-way admittance.
Fig. 4 is the isoboles of the circuit diagram of a kind of improved modularization multi-level converter tandem circuit provided by the invention.Owing to increased H bridge bidirectional switch circuit among the present invention, when the 3rd insulated gate bipolar transistor VT3 conducting, how the circuit sense of current in the middle of the half-bridge all can be in conducting state, so this tandem circuit can be reduced to Fig. 4.
Fig. 5 is the direction of current flow figure of the different operating state of a kind of improved modularization multi-level converter tandem circuit provided by the invention.Tandem circuit provided by the invention has four kinds of running statuses: (1) VT1, VT2, the equal locking of VT3; (2) VT1 is open-minded, and VT2 and VT3 all turn-off; (3) VT2 is open-minded, and VT1 and VT3 all turn-off; (4) VT3 is open-minded, and VT1 and VT2 all turn-off.
These four kinds of operational modes are analyzed at present; Operational mode (1): insulated gate bipolar transistor VT1; VT2, VT3 all are in blocking, are this kind state can not occur under normal condition; Not excessive system is in firm startup, or three insulated gate bipolar transistors can lockings during some malfunction.When electric current was mobile from positive bus-bar direction ac output end, electric current can be from first capacitor C of each top fly-wheel diode VD1 through tandem circuit
1With second capacitor C
2Progressively flow to ac output end, at this moment electric capacity first capacitor C
1With second capacitor C
2Charging; When electric current from ac output end when the positive bus-bar direction flows, electric current can be from each following fly-wheel diode VD2 without first capacitor C
1With the 2nd C
2Charging and progressively flow to exchange the positive bus-bar direction, this moment tandem circuit first capacitor C
1With second capacitor C
2It is the state that is in by bypass.
Operational mode (2): the state that insulated gate bipolar transistor VT1 opens, VT2 and VT3 turn-off, the electric current of this moment still can two-way flow.When electric current from positive bus-bar when the ac output end direction flows, electric current can be from fly-wheel diode VD1 through tandem circuit first capacitor C
1With second capacitor C
2Progressively flow to ac output end, at this moment first capacitor C of tandem circuit
1With second capacitor C
2Charging; When electric current from ac output end when the positive direct-current generatrix direction flows, electric current can be from first capacitor C of each tandem circuit
1With second capacitor C
2Progressively flow to the positive direct-current bus through insulated gate bipolar transistor VT1, at this moment tandem circuit first capacitor C
1With second capacitor C
2Discharge.This operating state, electric current can two-way flows, and tube current from what direction flows, and the tandem circuit output is always drawn the tandem circuit capacitance voltage; Two electric capacity first capacitor C of tandem circuit
1With second capacitor C
2Can discharge and recharge simultaneously, this depends on sense of current.
Operational mode (3): the state that insulated gate bipolar transistor VT2 opens, VT1 and VT3 turn-off; This moment, electric current still can two-way flow; When electric current from the positive direct-current bus when the ac output end direction flows, electric current can be from first capacitor C of each insulated gate bipolar transistor VT2 without tandem circuit
1With second capacitor C
2Progressively flow to ac output end, the capacitance voltage of this moment is unaffected; When electric current from the ac output end direction when the positive direct-current generatrix direction flows, electric current can progressively flow to the positive direct-current generatrix direction without tandem circuit electric capacity by the fly-wheel diode VD2 from separately below, the electric capacity of tandem circuit is also unaffected at this moment.
Operational mode (4): the state that insulated gate bipolar transistor VT3 opens, VT1 and VT2 turn-off, electric current still can two-way flow.The equivalent switch that when VT3 opens, is equivalent to Fig. 5 is closed, this moment when electric current from the positive direct-current bus when the ac output end direction flows, electric current can be from VT3 warp second capacitor C
2Progressively flow to output (though electric current also can be selected the low path of voltage from fly-wheel diode VD1 circulation), at this moment second capacitor C
2Charging.When electric current from the ac output end direction when the positive direct-current generatrix direction flows, electric current can progressively flow to the positive direct-current bus through electric capacity from VT3, this moment second capacitor C
2Discharge.This operating state, electric current can two-way flows, that direction of tube current VT3 that all can flow through not, and this module is used for controlling separately second capacitor C
2, for keeping first capacitor C
1, second capacitor C
2Voltage play a very important role.
Fig. 6 is the output voltage figure of a kind of improved modularization multi-level converter tandem circuit provided by the invention.Among Fig. 6, the output voltage values that can obtain tandem circuit provided by the invention has third gear, i.e. 2Uc, Uc, 0.Therefore can be referred to as three level tandem circuits, the voltage waveform of output is as shown in Figure 6
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (4)
1. improved modularization multi-level converter tandem circuit; It is characterized in that said tandem circuit comprises first insulated gate bipolar transistor, second insulated gate bipolar transistor, first diode, second diode, first electric capacity, second electric capacity and H bridge biswitch circuit;
Wherein, parallelly connected after said first insulated gate bipolar transistor and said first electric capacity and second capacitances in series with second insulated gate bipolar transistor;
Said first diode and the said first insulated gate bipolar transistor inverse parallel are used to protect first insulated gate bipolar transistor;
Said second diode and the said second insulated gate bipolar transistor inverse parallel are used to protect second insulated gate bipolar transistor;
Said H bridge biswitch circuit is connected with the negative pole of first electric capacity with output voltage is anodal respectively.
2. a kind of improved modularization multi-level converter tandem circuit according to claim 1; It is characterized in that said H bridge biswitch circuit comprises the 3rd diode, the 4th diode, the 5th diode, the 6th diode and the 3rd insulated gate bipolar transistor; Said the 3rd diode and the series connection of the 4th diode; Said the 5th diode and the series connection of the 6th diode; The negative pole of said the 3rd diode is connected with the negative pole of said the 6th diode and the collector electrode of the 3rd insulated gate bipolar transistor respectively; The positive pole of said the 4th diode is connected with the positive pole of said the 5th diode and the emitter of the 3rd insulated gate bipolar transistor respectively; The positive pole of said the 3rd diode is connected with output head anode; The positive pole of said the 6th diode is connected with the first electric capacity negative pole; Said H bridge biswitch circuit is used to realize H bridge biswitch circuit two-way admittance.
3. a kind of improved modularization multi-level converter tandem circuit according to claim 1 is characterized in that, said tandem circuit level output comprises three kinds of level states.
4. a kind of improved modularization multi-level converter tandem circuit according to claim 1 is characterized in that said tandem circuit comprises four kinds of running statuses.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102891393A CN102843031A (en) | 2012-08-14 | 2012-08-14 | Basic circuit of improved modular multilevel converter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102891393A CN102843031A (en) | 2012-08-14 | 2012-08-14 | Basic circuit of improved modular multilevel converter |
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| CN102843031A true CN102843031A (en) | 2012-12-26 |
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| CN2012102891393A Pending CN102843031A (en) | 2012-08-14 | 2012-08-14 | Basic circuit of improved modular multilevel converter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103701343A (en) * | 2013-12-21 | 2014-04-02 | 华南理工大学 | Three-phase bridge module unit series combination high-voltage transformer |
| CN104410260B (en) * | 2014-10-28 | 2017-05-10 | 浙江大学 | Fault-tolerance-capability-equipped MMC sub-module structure capable of realizing DC fault self-protection, and MMC modulation method thereof |
| CN107659193A (en) * | 2017-10-10 | 2018-02-02 | 安徽大学 | A kind of nine-level frequency-conversion device power circuit and its flying capacitor balance control method |
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| JP2010252548A (en) * | 2009-04-16 | 2010-11-04 | Fuji Electric Systems Co Ltd | Snubber circuit of three-level power converter |
| CN201869117U (en) * | 2010-08-27 | 2011-06-15 | 成都英格瑞德电气有限公司 | Efficient isolation inverter circuit |
| CN102347685A (en) * | 2010-07-22 | 2012-02-08 | 富士电机株式会社 | Three level power converting device |
| CN102624266A (en) * | 2012-03-16 | 2012-08-01 | 华为技术有限公司 | Three-level inverter circuit |
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2012
- 2012-08-14 CN CN2012102891393A patent/CN102843031A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010252548A (en) * | 2009-04-16 | 2010-11-04 | Fuji Electric Systems Co Ltd | Snubber circuit of three-level power converter |
| CN102347685A (en) * | 2010-07-22 | 2012-02-08 | 富士电机株式会社 | Three level power converting device |
| CN201869117U (en) * | 2010-08-27 | 2011-06-15 | 成都英格瑞德电气有限公司 | Efficient isolation inverter circuit |
| CN102624266A (en) * | 2012-03-16 | 2012-08-01 | 华为技术有限公司 | Three-level inverter circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103701343A (en) * | 2013-12-21 | 2014-04-02 | 华南理工大学 | Three-phase bridge module unit series combination high-voltage transformer |
| CN103701343B (en) * | 2013-12-21 | 2017-01-11 | 华南理工大学 | Three-phase bridge module unit series combination high-voltage transformer |
| CN104410260B (en) * | 2014-10-28 | 2017-05-10 | 浙江大学 | Fault-tolerance-capability-equipped MMC sub-module structure capable of realizing DC fault self-protection, and MMC modulation method thereof |
| CN107659193A (en) * | 2017-10-10 | 2018-02-02 | 安徽大学 | A kind of nine-level frequency-conversion device power circuit and its flying capacitor balance control method |
| CN107659193B (en) * | 2017-10-10 | 2020-09-11 | 安徽大学 | Nine-level frequency converter power circuit and suspension capacitor balance control method thereof |
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Application publication date: 20121226 |