CN102522913A - Hybrid multi-level current transformation topology based on H full-bridge subunit and control method of hybrid multi-level current transformation topology - Google Patents
Hybrid multi-level current transformation topology based on H full-bridge subunit and control method of hybrid multi-level current transformation topology Download PDFInfo
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- CN102522913A CN102522913A CN201110397726XA CN201110397726A CN102522913A CN 102522913 A CN102522913 A CN 102522913A CN 201110397726X A CN201110397726X A CN 201110397726XA CN 201110397726 A CN201110397726 A CN 201110397726A CN 102522913 A CN102522913 A CN 102522913A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0095—Hybrid converter topologies, e.g. NPC mixed with flying capacitor, thyristor converter mixed with MMC or charge pump mixed with buck
Abstract
The invention relates to a hybrid multi-level current transformation topology based on an H full-bridge subunit, wherein one end of an H bridge cascading module is connected with a positive direct-current bus, and the other end of a fully-controlled switch tube series connection module is connected with a negative direct-current bus; the fully-controlled switching tube series connection module is of an H bridge circuit structure consisting of four bridge arms with same structure, wherein a connection point between the first bridge arm and the third bridge arm and a connection point between the second bridge arm and the fourth bridge arm are used as output terminals and connected with an LC low-pass filter; and one end of the H bridge cascading module is connected with a connection inductor, and the other end of the connection inductor is connected with one end of the fully-controlled switching tube cascading module. The hybrid multi-level current transformation topology disclosed by the invention can be used as a single phase, can be also used for a three-phase alternating-current circuit sharing a direct-current bus and realizes four-quadrant operation.
Description
Technical field
The present invention relates to a kind of mixed multi-level, convertor circuit topology and control method thereof.
Background technology
The research of many level commutation technique starts from the seventies latter stage in last century, has occurred many level of diode clamp unsteady flow topology, many level of striding capacitance unsteady flow topology, many level of Cascade H bridge type unsteady flow topology in succession.But diode-clamped unsteady flow topology needs a large amount of clamping diodes;, level number also to consider that diode all presses problem when increasing; Exist direct voltage capacitance voltage imbalance problem simultaneously, particularly when surpassing three level, control strategy is complicated, be difficult to realize.Though striding capacitance type unsteady flow topology has a large amount of on off state combination redundancies and can be used for balance of voltage control; But need a large amount of clamping capacitances; The voltage of electric capacity all needs Balance Control; Electric capacity quantity too much causes control complicated, and the reliability of system is lacked, influenced greatly to the life-span of electric capacity simultaneously.Though it is simple that Cascade H bridge type current transformer is compared above-mentioned two kinds of structure main circuits, because the restriction of no clamping device is easy to realization, and at this more than three kinds in the level structure, it is minimum to export identical level number required device.But this structure needs a plurality of independently DC power supplys that capacitance voltage is all pressed, and is not suitable for the back-to-back structure, can't realize four quadrant running, and the application scenario is restricted.
Development along with power electronic technology; Various novel many level topological structures occur successively; The mixing of using the most ripe many level of modular combination Semiconductor Converting Technology that Siemens Company is arranged (Modular Multi-Level Converter (MMC)) and Alstom at present becomes brachium pontis many level Semiconductor Converting Technology (Alternate-Arm Multi-level Converter (A2MC)); These two technology obtain practical application in two companies direct current transportation project separately, and running status is good.These two kinds of technology are because can the common dc bus, therefore can four quadrant runnings, and, increased system reliability owing to all adopted modular construction, compare production cost with traditional structure and decrease with the control complexity.But many level of modular combination Semiconductor Converting Technology (MMC) DC bus-bar voltage grade is more than or equal to output AC electricity peak-to-peak value; Under the prerequisite of the identical electric pressure alternating current of output; It is 4 times of Cascade H bridge construction that the MMC structure needs the power subelement quantity of cascade, and required IGBT number is 2 times of Cascade H bridge construction.Though and the A2MC structure of Alstom is low to moderate the half the of MMC structure with the DC bus-bar voltage level down; Concatenated power subelement quantity equals the Cascade H bridge construction; But because the every circuitry phase upper and lower bridge arm of this structure all needs additional I GBT serial module structure to form the waveform targeting part; Causing its required IGBT quantity is 1.5 times of Cascade H bridge construction, and these shortcomings cause its whole convertor assembly manufacturing cost still higher.
Summary of the invention
The objective of the invention is to overcome that above-mentioned MMC structure and A2MC structure DC bus-bar voltage grade are high, required concatenated power subelement is with thereby the more system cost that causes of IGBT number is higher, loss is big, control complicacy and thereby the Cascade H bridge construction such as can't common dc bus application scenario be restricted at shortcoming, but a kind of novel common dc bus is proposed, can realize many level of the high-power unsteady flow topological structure and the control method thereof of four quadrant running.The present invention is based on the mixed multi-level technology, based on the device of subelement cascade of H full-bridge and the high withstand voltage full-control type device series combination of low frequency.The present invention compares with MMC structure, the A2MC structure of current trend, and under the prerequisite of the equal electric pressure alternating current of output, its DC bus-bar voltage grade is 1/4th of a MMC structure, half the for the A2MC structure; The quantity of concatenated power subelement is 1/8th of MMC structure, half the for the A2MC structure, thus reduce current transformer loss and manufacturing cost, simplification converter structure and control mode, raising system reliability.
Mixed multi-level unsteady flow topology of the present invention comprises: dc bus, single-phase convertor circuit structure and LC low pass filter.Described single-phase convertor circuit structure comprises H bridge cascade module, connects inductance and controls the switching tube serial module structure entirely; One end of described H bridge cascade module is connected with the positive direct-current bus, and an end of controlling the switching tube serial module structure entirely is connected with negative dc bus; Full control switching tube serial module structure is formed H bridge circuit structure by four identical brachium pontis of structure, and first brachium pontis is connected with described LC low pass filter as lead-out terminal with the tie point of the 4th brachium pontis with the tie point and second brachium pontis of the 3rd brachium pontis; One end of described H bridge cascade module be connected inductance and connect, connect the other end of inductance and be connected with an end of controlling the switching tube serial module structure entirely.
Described H bridge cascade module is made up of the cascade of n H full bridge power subelement, and described H full bridge power subelement is formed the H bridge construction by four IGBT and composed in parallel with flying capacitor then.N is the integer more than or equal to 1, and the no value upper limit, the value of n depend on the ratio of unsteady flow topology DC bus-bar voltage and each H full bridge power subelement flying capacitor voltage given value.
In the described H full bridge power subelement: the emitter of first igbt is connected with the collector electrode of the 3rd igbt, and this tie point is as first exit of a H full bridge power subelement; The emitter of second igbt is connected with the collector electrode of the 4th igbt, and this tie point is as second leading-out terminal of a H full bridge power subelement; The collector electrode of first igbt is connected the back and is connected with the anode of first flying capacitor with the collector electrode of second igbt; The emitter of the 3rd igbt is connected the back and is connected with the negative electrode of first flying capacitor with the emitter of the 4th igbt; So form a H full bridge power subelement;
The emitter of the 5th igbt is connected with the collector electrode of the 7th igbt, and this tie point is as first exit of the 2nd H full bridge power subelement; The emitter of the 6th igbt is connected with the collector electrode of the 8th igbt, and this tie point is as second exit of the 2nd H full bridge power subelement; The collector electrode of the 5th igbt is connected the back and is connected with the anode of second flying capacitor with the collector electrode of the 6th igbt; The emitter of the 7th igbt is connected the back and is connected with the negative electrode of second flying capacitor with the emitter of the 8th igbt; So form the 2nd H full bridge power subelement;
By that analogy, the emitter of 4N-3 igbt is connected with the collector electrode of 4N-1 igbt, and this tie point is as first exit of N H full bridge power subelement; The emitter of 4n-2 igbt is connected with the collector electrode of 4n igbt, and this tie point is as second exit of N H full bridge power subelement; The collector electrode of 4N-3 igbt is connected the back and is connected with the anode of N flying capacitor with the collector electrode of 4N-2 igbt; The emitter of 4N-1 igbt is connected the back and is connected with the negative electrode of N flying capacitor with the emitter of 4N igbt; Form N H full bridge power subelement.
Second leading-out terminal of a described H full bridge power subelement is connected with first leading-out terminal of the 2nd H full bridge power subelement; Second leading-out terminal of described the 2nd H full bridge power subelement is connected with first leading-out terminal of the 3rd H full bridge power subelement; By that analogy; Second leading-out terminal of N-1 H full bridge power subelement is connected with first leading-out terminal of N H full bridge power subelement; Second leading-out terminal of N H full bridge power subelement is as second leading-out terminal of H bridge cascade module, and first leading-out terminal of a described H full bridge power subelement is as first leading-out terminal of H bridge cascade module.
Described full control switching tube serial module structure is made up of four brachium pontis, and each brachium pontis is composed in series by the high withstand voltage full-controlled switch pipe of m low frequency, and like GTO, IGCT etc. also can be replaced by the low withstand voltage IGBT pipe of high frequency.M is the integer more than or equal to 1, and the no value upper limit, the value of m depend on that unsteady flow topology DC bus-bar voltage and each switching tube can bear the ratio of shutoff voltage.
The composition mode of brachium pontis is following in the described full control switching tube serial module structure:
The negative electrode of first gate level turn-off thyristor of first brachium pontis is connected with the anode of second gate level turn-off thyristor of first brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of first brachium pontis is connected with the anode of the N gate level turn-off thyristor of first brachium pontis, forms first brachium pontis of full control switching tube serial module structure; The negative electrode of first gate level turn-off thyristor of second brachium pontis is connected with the anode of second gate level turn-off thyristor of second brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of second brachium pontis is connected with the anode of the M gate level turn-off thyristor of second brachium pontis, forms second brachium pontis of full control switching tube serial module structure; The negative electrode of first gate level turn-off thyristor of the 3rd brachium pontis is connected with the anode of second gate level turn-off thyristor of the 3rd brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of the 3rd brachium pontis is connected with the anode of the M gate level turn-off thyristor of the 3rd brachium pontis, forms the 3rd brachium pontis of full control switching tube serial module structure; The negative electrode of first gate level turn-off thyristor of the 4th brachium pontis is connected with the anode of second gate level turn-off thyristor of the 4th brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of the 4th brachium pontis is connected with the anode of the N gate level turn-off thyristor of the 4th brachium pontis, forms the 4th brachium pontis of full control switching tube serial module structure.
The position of the H bridge cascade module of single-phase convertor circuit and full control switching tube serial module structure can exchange; One end of promptly full control switching tube serial module structure is connected with the positive direct-current bus; The other end of full control switching tube serial module structure is connected with an end of H bridge cascade module through connecting inductance, and the other end of H bridge cascade module is connected with negative dc bus; Connect inductance and can place between H bridge cascade module and the full control switching tube serial module structure, or between first brachium pontis of full control switching tube serial module structure and second brachium pontis, the 3rd brachium pontis and the 4th brachium pontis, respectively place one and be connected inductance replacement H bridge cascade module and control the inductance that is connected between the switching tube serial module structure entirely.
Controlling schemes to mixed multi-level commutation circuit topology of the present invention is following:
For H bridge cascade module,, be U if establish flying capacitor voltage stationary value because the employing of power subelement is H full bridge power subelement
c,
U
c=U
d/n (1)
In the following formula, U
dBe DC bus-bar voltage, n is the H full bridge power subelement quantity in the H bridge cascade module.Then its output level have Uc, 0 ,-three kinds of selections of Uc, then the cascade module output waveform has the different of essence with adopting the half-bridge subelement.When adopting phase-shifting carrier wave PWM modulation technique, its modulating wave waveform expression formula is provided with as follows:
U
tiaozhi=1-2·m·|sinωt| (2)
In the following formula, n is a H full bridge power subelement quantity, and m is a modulation ratio; Angular velocity omega=2 π f, f is the frequency of this topological structure output AC voltage, t is the time; Each subelement triangular carrier frequency 1KHz, phase place mutual deviation 2 π/n, then single power subelement output waveform first-harmonic expression formula is following:
U
out=U
c-2U
c·m·|sinωt| (3)
In the following formula, U
cBe the flying capacitor burning voltage in the H full bridge power subelement, m is a modulation ratio, angular velocity omega=2 π f, and f is the frequency of this topological structure output AC voltage, t is the time.The total voltage of H bridge cascade module output is each power subelement output voltage sum, and its waveform first-harmonic expression formula is:
U
all=U
d-2U
d·m·|sinωt| (4)
In the following formula, U
dBe DC bus-bar voltage, m is a modulation ratio, angular velocity omega=2 π f, and f is the frequency of this topological structure output AC voltage, t is the time.Can find out that from this formula get limiting case modulation ratio m=1, the generation peak value is U
PeakSinusoidal positive half wave alternating voltage, required dc bus is merely U
Peak/ 2.
For full control switching tube serial module structure; Full control switching tube serial module structure first brachium pontis adopts same drive signal with full control switching tube serial module structure the 4th brachium pontis; Full control switching tube serial module structure second brachium pontis adopts same drive signal with full control switching tube serial module structure the 3rd brachium pontis; This two-way drive signal is that phase place is opposite, and the square-wave signal in dead band is set.Wherein first via drive signal phase place is identical with the modulating wave phase place of H bridge cascade module.Then because the full bridge structure characteristic of full control switching tube serial module structure, with and two ends institute making alive waveform characteristic.Through as above type of drive, when full control switching tube serial module structure first brachium pontis during with the conducting simultaneously of full control switching tube serial module structure the 4th brachium pontis, output is output as sinusoidal positive half wave voltage through the LC filter; When full control switching tube serial module structure second brachium pontis and the conducting simultaneously of full control switching tube the 3rd brachium pontis, output is output as the negative half-wave voltage of sine through the LC filter.So, control the switching tube serial module structure entirely and equal 2U through LC filter filtering harmonic composition output peak-to-peak value in the whole cycle
PeakComplete sinusoidal voltage.
Following to described capacitance voltage balance control method: voltage sensor is installed at the flying capacitor two ends, gathers n sub-cells capacitance voltage, compares with given voltage separately; Carry out proportional integral through pi regulator and calculate, with the output valve modulating wave that is added to, with triangular wave relatively; Under the prerequisite that does not influence output waveform; Fine setting full bridge power subelement inserts and the time that breaks away from main circuit structure, thereby the adjustment capacitance voltage makes each power subelement electric voltage equalization.
Advantage of the present invention:
A. but this converter structure common dc bus both can be operated in the inversion mode of operation, also can be operated in the rectification mode of operation, can realize four quadrant running;
B. compare with other multi-electrical level inverters, the topological structure DC bus-bar voltage that the present invention adopted is merely 1/4th of inversion output AC voltage peak-to-peak value, is that MMC structure DC bus-bar voltage grade gets 1/4th, half of A2MC structure;
C. at the alternating voltage of output with electric pressure; Under the prerequisite of the IGBT of employing same model and the flying capacitor of same capability same type; Concatenated power subelement number required for the present invention is merely 1/8th of MMC structure, is 1/2nd of A2MC or Cascade H bridge construction;
D. if export the alternating voltage with electric pressure, adopt the IGBT of same model, IGBT number required for the present invention is 1/4th of a MMC structure, and 1/2nd of Cascade H bridge construction has reduced system cost;
Though e. than MMC structure and Cascade H bridge construction; The present invention has increased extra full control switching tube serial module structure; Need extra full-controlled switch pipe to be composed in series, but can know that by above-mentioned control mode the switching tube of this part is operated in the soft switching mode of power frequency mostly; Therefore turn-off power loss almost can be ignored, and system loss is effectively reduced.
F. same because the switching tube of this part is operated in the soft switching mode of power frequency mostly, and the du/dt that bears during shutoff is very low, need not to consider the series average-voltage problem, and design of drive circuit is simple, need not to adopt complicated nanosecond synchronization Driving technique;
G. control the switching tube serial module structure entirely and can select the high withstand voltage device of low frequency, like GTO, IGCT etc.,, whole installation cost is compared with other structures and is still declined to a great extent;
H. unsteady flow topological structure of the present invention is expanded simple, can come the booster tension grade through increasing waveform generation part cascade subelement number and waveform targeting part series connection full-controlled switch pipe quantity;
I. owing to adopted N sub-cells cascade structure, the N that overall equivalent switching frequency is single subelement doubly, the output voltage exponent number is many, the harmonic content of generation is low;
What j. whole change of current topology adopted all is the low pressure conventional components, and device is bought easily, and manufacture difficulty is less relatively, and reliability is high;
K. for different voltages with different and current class, can reach requirement through simple connection;
L. the system failure is redundant high, a cascade subelement fault, but still derate work of system.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation.
Fig. 1 is the circuit theory diagrams of specific embodiment 1 of the present invention;
Fig. 2 is the circuit theory diagrams of the specific embodiment of the invention 2;
Fig. 3 is the whole control principle sketch map of specific embodiment 2 of the present invention;
Fig. 4 controls principle schematic mutually for the A of specific embodiment 2 of the present invention;
Fig. 5 is the circuit theory diagrams of the present invention as DC transmission system.
Embodiment
The topological embodiment circuit theory diagrams of mixed multi-level unsteady flow for the present invention is based on H full-bridge subelement shown in Figure 1, mixed multi-level unsteady flow topology of the present invention comprises: dc bus, single-phase convertor circuit structure and LC low pass filter.One end of H bridge cascade module is connected with the positive direct-current bus, and an end of controlling the switching tube serial module structure entirely is connected with negative dc bus.Described single-phase convertor circuit structure comprises H bridge cascade module, connects inductance, controls the switching tube serial module structure entirely.Described H bridge cascade module is made up of the cascade of n full-bridge subelement.Described full control switching tube serial module structure is formed H bridge circuit structure by four identical brachium pontis of structure; In the described H bridge circuit, control the tie point of switching tube serial module structure first brachium pontis and full control switching tube serial module structure the 3rd brachium pontis entirely and control switching tube serial module structure second brachium pontis entirely and draw as lead-out terminal with the tie point of controlling switching tube serial module structure the 4th brachium pontis entirely and be connected the LC filter.One end of H bridge cascade module be connected inductance and connect, connect the other end of inductance and be connected with an end of controlling the switching tube serial module structure entirely.The other end of H bridge cascade module is connected with the positive direct-current bus, and the other end of controlling the switching tube serial module structure entirely is connected with negative dc bus.
Described H bridge cascade module is made up of the cascade of n H full bridge power subelement, and concrete type of attachment is described below:
The emitter of first insulated gate bipolar transistor IGBT 1 is connected with the collector electrode of the 3rd insulated gate bipolar transistor IGBT 3, and tie point is drawn first exit 0 as a H full bridge power subelement; The emitter of second insulated gate bipolar transistor IGBT 2 is connected with the collector electrode of the 4th insulated gate bipolar transistor IGBT 4, and tie point is drawn second leading-out terminal 1 as a H full bridge power subelement; The collector electrode of first insulated gate bipolar transistor IGBT 1 is connected then with the collector electrode of second insulated gate bipolar transistor IGBT 2 and is connected with the anode of the first flying capacitor C1; The emitter of the 3rd insulated gate bipolar transistor IGBT 3 is connected then with the emitter of the 4th insulated gate bipolar transistor IGBT 4 and is connected with the negative electrode of the first flying capacitor C1; Form a H full bridge power subelement.
The emitter of the 5th insulated gate bipolar transistor IGBT 5 is connected with the collector electrode of the 7th insulated gate bipolar transistor IGBT 7, and tie point is drawn first exit 2 as the 2nd H full bridge power subelement; The emitter of the 6th insulated gate bipolar transistor IGBT 6 is connected with the collector electrode of the 8th insulated gate bipolar transistor IGBT 8 and tie point is drawn second exit 3 as the 2nd H full bridge power subelement; The collector electrode of the 5th insulated gate bipolar transistor IGBT 5 is connected then with the collector electrode of the 6th insulated gate bipolar transistor IGBT 6 and is connected with the anode of the second flying capacitor C2; The emitter of the 7th insulated gate bipolar transistor IGBT 7 is connected then with the emitter of the 8th insulated gate bipolar transistor IGBT 8 and is connected with the negative electrode of the second flying capacitor C2; Form the 2nd H full bridge power subelement.
By that analogy, the emitter of 4N-3 insulated gate bipolar transistor IGBT 4n-3 is connected with the collector electrode of 4N-1 insulated gate bipolar transistor IGBT 4n-1, and tie point is drawn first exit 4 as N H full bridge power subelement; The emitter of 4n-2 insulated gate bipolar transistor IGBT 4n-2 is connected with the collector electrode of 4n insulated gate bipolar transistor IGBT 4n, and tie point is drawn second exit 5 as N H full bridge power subelement; The collector electrode of 4N-3 insulated gate bipolar transistor IGBT 4n-3 is connected with the collector electrode of 4N-2 insulated gate bipolar transistor IGBT 4n-2, and the anode with N flying capacitor Cn is connected then; The emitter of 4N-1 insulated gate bipolar transistor IGBT 4n-1 is connected with the emitter of 4N insulated gate bipolar transistor IGBT 4n, and the negative electrode with N flying capacitor Cn is connected then; Form N H full bridge power subelement.
First leading-out terminal 0 of the one H full bridge power subelement is as first leading-out terminal 0 of H full-bridge cascade module; Second leading-out terminal 1 of the one H full bridge power subelement is connected with first leading-out terminal 2 of the 2nd H full bridge power subelement; Second leading-out terminal 3 of the 2nd H full bridge power subelement is connected with first leading-out terminal of the 3rd H full bridge power subelement; By that analogy; Second leading-out terminal 4 of N-1 H full bridge power subelement is connected with first leading-out terminal 4 of N H full bridge power subelement, and second leading-out terminal 5 of N H full bridge power subelement is drawn second leading-out terminal 5 as H full-bridge cascade module.
Described full control switching tube serial module structure is made up of the brachium pontis of four symmetries, and concrete connected mode is narrated as follows:
The negative electrode of the first gate level turn-off thyristor GTO a1 of first brachium pontis is connected with the anode of the second gate level turn-off thyristor GTO a2 of first brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor GTOam-1 of first brachium pontis is connected with the anode of the N gate level turn-off thyristor GTO am of first brachium pontis; First brachium pontis of forming full control switching tube serial module structure; The anode of the first gate level turn-off thyristor GTOa1 of first brachium pontis is as first leading-out terminal of described first brachium pontis, and the negative electrode of the N gate level turn-off thyristor GTOam of first brachium pontis is as second leading-out terminal of described first brachium pontis.
The negative electrode of the first gate level turn-off thyristor GTOb1 of second brachium pontis is connected with the anode of the second gate level turn-off thyristor GTOb2 of second brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor GTObm-1 of second brachium pontis is connected with the anode of the M gate level turn-off thyristor GTObm of second brachium pontis; Second brachium pontis of forming full control switching tube serial module structure; The anode of the first gate level turn-off thyristor GTOb1 of second brachium pontis is as first leading-out terminal of described second brachium pontis, and the negative electrode of the M gate level turn-off thyristor GTObm of second brachium pontis is as second leading-out terminal of described first brachium pontis.
The negative electrode of the first gate level turn-off thyristor GTOc1 of the 3rd brachium pontis is connected with the anode of the second gate level turn-off thyristor GTOc2 of the 3rd brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor GTOcm-1 of the 3rd brachium pontis is connected with the anode of the M gate level turn-off thyristor GTOcm of the 3rd brachium pontis; The 3rd brachium pontis of forming full control switching tube serial module structure; The anode of the first gate level turn-off thyristor GTOc1 of the 3rd brachium pontis is as first leading-out terminal of described the 3rd brachium pontis, and the negative electrode of the M gate level turn-off thyristor GTOcm of the 3rd brachium pontis is as second leading-out terminal of described the 3rd brachium pontis.
The negative electrode of the first gate level turn-off thyristor GTOd1 of the 4th brachium pontis is connected with the anode of the second gate level turn-off thyristor GTOd2 of the 4th brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor GTOdm-1 of the 4th brachium pontis is connected with the anode of the N gate level turn-off thyristor GTOdm of the 4th brachium pontis; The 4th brachium pontis of forming full control switching tube serial module structure; The anode of the first gate level turn-off thyristor GTOd1 of the 4th brachium pontis is as first leading-out terminal of described the 4th brachium pontis, and the negative electrode of the M gate level turn-off thyristor GTOdm of the 4th brachium pontis is as second leading-out terminal of described the 4th brachium pontis.
First leading-out terminal of described first brachium pontis is connected with first leading-out terminal of second brachium pontis; First leading-out terminal 6 as described full control switching tube serial module structure; Second leading-out terminal of described the 3rd brachium pontis and second leading-out terminal of the 4th brachium pontis are drawn, as second leading-out terminal 9 of described full control switching tube serial module structure; Second leading-out terminal of described first brachium pontis is connected with first leading-out terminal of second brachium pontis, and draws three terminal 8 as described full control switching tube serial module structure; Second leading-out terminal of described the 3rd brachium pontis is connected with first leading-out terminal of the 4th brachium pontis, and draws the 4th leading-out terminal 7 as described full control switching tube serial module structure.
The concrete connected mode of described single-phase convertor circuit structure is narrated as follows:
First leading-out terminal 0 of described H full-bridge cascade module is connected with positive direct-current bus P; Second leading-out terminal 5 of described H full-bridge cascade module connects with an end that is connected inductance L 1; The other end that connects inductance L 1 is connected with first leading-out terminal 6 of full control switching tube serial module structure; Second leading-out terminal 9 of full control switching tube serial module structure is connected with negative dc bus N; Three terminal of full control switching tube serial module structure is drawn with an end of the inductance L 2 of LC filter as first leading-out terminal of single-phase bridge and is connected; The 4th leading-out terminal of full control switching tube serial module structure is drawn with the end of the inductance C2 of LC filter as second leading-out terminal of single-phase bridge and is connected; And draw first exit 11 as described many level unsteady flow topology, the other end of L2 is connected second exit 10 of drawing as described many level unsteady flow topology with C2.
Controlling schemes to mixed multi-level commutation circuit topology of the present invention is following:
For H bridge cascade module, the modulating wave of three H full bridge power subelement employings is identical, and waveform expression formula such as above-mentioned formula (2) are said.
A described H full bridge power subelement triangular carrier frequency 1KHz, the phase angle is 0.Modulating wave and carrier wave compare output SPWM drive signal; Drive signal is divided into two-way; One the tunnel directly drives first insulated gate bipolar transistor IGBT 1 and the 4th insulated gate bipolar transistor IGBT 4 through overdrive circuit, and another road is through inverter and the dead band is set drives second insulated gate bipolar transistor IGBT 2 and the 3rd insulated gate bipolar transistor IGBT 3 simultaneously.
Described the 2nd H full bridge power subelement triangular carrier frequency 1KHz, the phase angle is 2 π/n, modulating wave and triangular carrier are through comparator output SPWM drive signal.The SPWM drive signal is divided into two-way; One the tunnel directly drives the 5th insulated gate bipolar transistor IGBT 5 and the 8th insulated gate bipolar transistor IGBT 8 through overdrive circuit, and another road is through inverter and the dead band is set drives the 6th insulated gate bipolar transistor IGBT 6 and the 7th insulated gate bipolar transistor IGBT 7 simultaneously.
By that analogy, described nH full bridge power subelement triangular carrier frequency 1KHz, the phase angle is 2 π (n-1)/n, modulating wave and triangular carrier are through comparator output SPWM drive signal.The SPWM drive signal is divided into two-way; One the tunnel directly drives 4n-3 insulated gate bipolar transistor IGBT 4n-3 and 4n insulated gate bipolar transistor IGBT 4n through overdrive circuit, and another road is through inverter and the dead band is set drives 4n-1 insulated gate bipolar transistor IGBT 4n-1 and 4n-2 insulated gate bipolar transistor IGBT 4n-2 simultaneously.
For full control switching tube serial module structure; Gate level turn-off thyristor in described full control switching tube serial module structure first brachium pontis and described full control switching tube serial module structure the 4th brachium pontis adopts same drive signal, and this drive signal is the square-wave signal that the modulating wave phase place is identical, frequency is identical with H bridge cascade module.
Gate level turn-off thyristor in described full control switching tube serial module structure second brachium pontis and described full control switching tube serial module structure the 3rd brachium pontis adopts same drive signal; This drive signal is opposite with the modulating wave phase place of H bridge cascade module, the square-wave signal that frequency is identical.Through as above type of drive, when described full control switching tube serial module structure first brachium pontis and the conducting simultaneously of described full control switching tube serial module structure the 4th brachium pontis, output is output as sinusoidal positive half wave voltage through the LC filter; When described full control switching tube serial module structure second brachium pontis and the conducting simultaneously of described full control switching tube serial module structure the 4th brachium pontis, output is output as sinusoidal negative half-wave voltage through the LC filter.So, control the switching tube serial module structure entirely and equal 2mU through LC filter filtering harmonic composition output peak-to-peak value in the whole cycle
dComplete sinusoidal voltage.
Shown in Figure 2 is many level current transformers of three-phase structure principle chart based on the single-phase unsteady flow topological structure of the present invention, comprising: the shared dc bus of three-phase, three single-phase convertor circuits, three-phase LC filter circuit.Three single-phase convertor circuit operation principles are identical, output mutual deviation 120 degree sine wave AC voltages.The topological structure of each single-phase convertor circuit is identical with single-phase unsteady flow topological structure in the foregoing description 1.First leading-out terminal 105 of first leading-out terminal 101 of A phase convertor circuit, B phase convertor circuit, first leading-out terminal 109 of C phase convertor circuit are connected with positive direct-current bus P.Second leading-out terminal 108 of second leading-out terminal 104 of A phase convertor circuit, B phase convertor circuit, second leading-out terminal 112 of C phase convertor circuit are connected with negative dc bus.
Three terminal 102 of A phase convertor circuit and the A inductance L 3 one ends connection of LC filter circuit mutually; The 4th leading-out terminal 103 of A phase convertor circuit and the A capacitor C 3 one ends connection of LC filter circuit mutually; And draw as first of A phase and exchange leading-out terminal 114, the other end of the inductance L 3 of A phase filter circuit and A capacitor C 3 other ends of filter circuit mutually connect and draw the second interchange leading-out terminal 113 as the A phase.Three terminal 106 of B phase convertor circuit and the B inductance L 4 one ends connection of LC filter circuit mutually; The 4th leading-out terminal 107 of B phase convertor circuit and the B capacitor C 4 one ends connection of LC filter circuit mutually; And draw as first of B phase and exchange leading-out terminal 116, the other end of the inductance L 4 of B phase filter circuit and B capacitor C 4 other ends of filter circuit mutually connect and draw the second interchange leading-out terminal 115 as the B phase.Three terminal 110 of C phase convertor circuit and the C inductance L 5 one ends connection of LC filter circuit mutually; The 4th leading-out terminal 111 of C phase convertor circuit and the C capacitor C 5 one ends connection of LC filter circuit mutually; And draw as first of C phase and exchange leading-out terminal 118, the other end of the inductance L 5 of C phase filter circuit and C capacitor C 5 other ends of filter circuit mutually connect and draw the second interchange leading-out terminal 117 as the C phase.
As the specific embodiment of a kind of high-power converter based on H full bridge power subelement of the present invention, concrete control mode is following:
A phase, B phase, C phase control mode are identical with the single-phase unsteady flow topological structure described in the embodiment 1; Whole control method is as shown in Figure 3; A phase H bridge cascade module modulating wave and A triangular carrier generating module comparison mutually; The output modulation signal is given A phase H bridge cascade module drive circuit, and A phase H bridge cascade module modulating wave is given A through phase-locked loop output 50Hz square wave and controlled switching tube tandem drive circuit mutually entirely; B phase H bridge cascade module modulating wave and B mutually the triangular carrier generating module relatively, the output modulation signal is given B phase H bridge cascade module drive circuit, B phase H bridge cascade module modulating wave is given B through phase-locked loop output 50Hz square wave and is controlled switching tube tandem drive circuit mutually entirely; C phase H bridge cascade module modulating wave and C triangular carrier generating module comparison mutually, the output modulation signal is given C phase H bridge cascade module drive circuit, and C phase H bridge cascade module modulating wave is given C through phase-locked loop output 50Hz square wave., control switching tube tandem drive circuit entirely mutually.For H bridge cascade module; When adopting phase-shifting carrier wave PWM modulation technique; Modulating wave mutual deviation 120 degree; Then according to the drive principle described in the embodiment 1, A phase convertor circuit first exchange leading-out terminal 114 and A mutually the sinusoidal ac phase place between the convertor circuit second interchange leading-out terminal 113 be 0, amplitude is mU
dB phase convertor circuit first exchange leading-out terminal 116 and B mutually the sinusoidal ac phase place between the convertor circuit second interchange leading-out terminal 115 be 2 π/3, amplitude is mU
dC phase convertor circuit first exchange leading-out terminal 117 and B mutually the sinusoidal ac phase place between the convertor circuit second interchange leading-out terminal 118 be 4 π/3, amplitude is mU
dShown in Figure 4 for for example mutually with A, for H bridge cascade module, the modulating wave of three H full bridge power subelement employings is identical, and waveform expression formula such as above-mentioned formula (2) are said.
A is the first triangular carrier frequency 1KHz mutually, and the phase angle is 0.Modulating wave and carrier wave compare output SPWM drive signal; Drive signal is divided into two-way; One the tunnel directly drives the first insulated gate bipolar transistor IGBT a1 and the 4th insulated gate bipolar transistor IGBT a4 through overdrive circuit, and another road is through inverter and the dead band is set drives the second insulated gate bipolar transistor IGBT a2 and the 3rd insulated gate bipolar transistor IGBT a3 simultaneously.
A is the second triangular carrier frequency 1KHz mutually, and the phase angle is 2 π/3, and modulating wave and triangular carrier are through comparator output SPWM drive signal.The SPWM drive signal is divided into two-way; One the tunnel directly drives the 5th insulated gate bipolar transistor IGBT 5 and the 8th insulated gate bipolar transistor IGBT 8 through overdrive circuit, and another road is through inverter and the dead band is set drives the 6th insulated gate bipolar transistor IGBT 6 and the 7th insulated gate bipolar transistor IGBT 7 simultaneously.
A is the 3rd triangle carrier frequency rate 1KHz mutually, and the phase angle is 4 π/3, and modulating wave and triangular carrier are through comparator output SPWM drive signal.The SPWM drive signal is divided into two-way; One the tunnel directly drives the 9th insulated gate bipolar transistor IGBT a9 and 4n insulated gate bipolar transistor IGBT a12 through overdrive circuit, and another road is through inverter and the dead band is set drives the tenth insulated gate bipolar transistor IGBT a10 and the 11 insulated gate bipolar transistor IGBT a11 simultaneously.
Control the switching tube serial module structure mutually entirely for A; Described A is controlled the switching tube serial module structure first brachium pontis Qa1 mutually entirely and is adopted same drive signal with the gate level turn-off thyristor that described A is controlled among switching tube serial module structure the 4th brachium pontis Qa4 mutually entirely, and this drive signal is the square-wave signal that the modulating wave phase place is identical, frequency is identical with H bridge cascade module.
A is controlled the switching tube serial module structure second brachium pontis Qa2 mutually entirely and is adopted same drive signal with the gate level turn-off thyristor that A is controlled among switching tube serial module structure the 3rd brachium pontis Qa3 mutually entirely; This drive signal is opposite with the modulating wave phase place of H bridge cascade module, the square-wave signal that frequency is identical.
Shown in Figure 5 is DC transmission system principle based on unsteady flow topological structure of the present invention.Three single-phase unsteady flow topological structures are by connecting into three-phase six lines first current transformer 40 described in the embodiment 2; Three single-phase unsteady flow topological structures are according to connecting into three-phase six lines second current transformer 41 described in the embodiment 2 in addition; First current transformer 40 is operated in inverter mode, and second current transformer 41 is operated in the rectification pattern.First current transformer 40 and second current transformer, 41 shared two dc buss 38,39 carry out electric power transfer.
Three-phase six lines first current transformer 40 is operated in inverter mode, output three-phase six line alternating voltages.Six roots of sensation line connects six inputs 46,47,48,49,50 and 51 of doubleY-Δ type transformer, and doubleY-Δ type transformer opposite side is drawn three lead-out terminals 43,44,45, is output as the phase three-wire three alternating current of phase angle mutual deviation 120 degree.
Three-phase six lines second current transformer 41 is operated in the rectification pattern.Be input as the phase three-wire three alternating current; The three-way input side 59,60,61 that connects doubleY-Δ type first transformer 58; DoubleY-Δ type transformer is output as three two line single-phase alternating currents of phase place mutual deviation 120 degree; The modulation system of 57,56,55,54,53,52, two current transformers of six inputs of connection three-phase six line current transformers 2 is all identical with embodiment 2.
Claims (10)
1. the mixed multi-level unsteady flow based on H full-bridge subelement is topological, and it is characterized in that: described many level unsteady flow topology comprises: dc bus, single-phase convertor circuit structure and LC low pass filter; Described single-phase convertor circuit structure comprises H bridge cascade module, connects inductance and controls the switching tube serial module structure entirely; One end of described H bridge cascade module is connected with the positive direct-current bus; One end of described full control switching tube serial module structure is connected with negative dc bus; The other end of described H bridge cascade module be connected inductance and connect, the other end that connects inductance is connected with the other end of described full control switching tube serial module structure; Described full control switching tube serial module structure is formed H bridge circuit structure by four identical brachium pontis of structure, and first brachium pontis of H bridge circuit structure is connected with described LC low pass filter as lead-out terminal with the tie point of the 4th brachium pontis with the tie point of the 3rd brachium pontis and second brachium pontis.
2. according to the described mixed multi-level unsteady flow topology based on H full-bridge subelement of claim 1, it is characterized in that: described H bridge cascade module is made up of the cascade of n H full bridge power subelement, and n is the integer more than or equal to 1, the no value upper limit; Described H full bridge power subelement forms H bridge type circuit by four IGBT and flying capacitor composes in parallel.
3. according to the described mixed multi-level unsteady flow topology of claim 2 based on H full-bridge subelement; It is characterized in that: in the described H full bridge power subelement: the emitter of first igbt (IGBT1) is connected with the collector electrode of the 3rd igbt (IGBT3), and this tie point is as first exit (0) of a H full bridge power subelement; The emitter of second igbt (IGBT2) is connected with the collector electrode of the 4th igbt (IGBT4), and this tie point is as second leading-out terminal (1) of a H full bridge power subelement; The collector electrode of first igbt (IGBT1) is connected the back and is connected with the anode of first flying capacitor (C1) with the collector electrode of second igbt (IGBT2); The emitter of the 3rd igbt (IGBT3) is connected the back and is connected with the negative electrode of first flying capacitor (C1) with the emitter of the 4th igbt (IGBT4); So form a H full bridge power subelement;
The emitter of the 5th igbt (IGBT5) is connected with the collector electrode of the 7th igbt (IGBT7), and this tie point is as first exit (2) of the 2nd H full bridge power subelement; The emitter of the 6th igbt (IGBT6) is connected with the collector electrode of the 8th igbt (IGBT8), and this tie point is as second exit (3) of the 2nd H full bridge power subelement; The collector electrode of the 5th igbt (IGBT5) is connected the back and is connected with the anode of second flying capacitor (C2) with the collector electrode of the 6th igbt (IGBT6); The emitter of the 7th igbt (IGBT7) is connected the back and is connected with the negative electrode of second flying capacitor (C2) with the emitter of the 8th igbt (IGBT8); So form the 2nd H full bridge power subelement;
By that analogy, the emitter of 4N-3 igbt (IGBT4n-3) is connected with the collector electrode of 4N-1 igbt (IGBT4n-1), and this tie point is as first exit (4) of N H full bridge power subelement; The emitter of 4n-2 igbt (IGBT4n-2) is connected with the collector electrode of 4n igbt (IGBT4n), and this tie point is as second exit (5) of N H full bridge power subelement; The collector electrode of 4N-3 igbt (IGBT4n-3) is connected the back and is connected with the anode of N flying capacitor (Cn) with the collector electrode of 4N-2 igbt (IGBT4n-2); The emitter of 4N-1 igbt (IGBT4n-1) is connected the back and is connected with the negative electrode of N flying capacitor (Cn) with the emitter of 4N igbt (IGBT4n); Form N H full bridge power subelement.
4. according to claim 2 or 3 described mixed multi-level unsteady flow topologys based on H full-bridge subelement, it is characterized in that: in the described H bridge cascade module, n H full bridge power subelement cascade system is following:
Second leading-out terminal (1) of a described H full bridge power subelement is connected with first leading-out terminal (2) of the 2nd H full bridge power subelement; Second leading-out terminal (3) of described the 2nd H full bridge power subelement is connected with first leading-out terminal (3) of the 3rd H full bridge power subelement; By that analogy; Second leading-out terminal (4) of N-1 H full bridge power subelement is connected with first leading-out terminal (4) of N H full bridge power subelement; Second leading-out terminal (5) of N H full bridge power subelement is as second leading-out terminal of H bridge cascade module, and first leading-out terminal (0) of a described H bridge power subelement is as first leading-out terminal of H bridge cascade module.
5. according to the described mixed multi-level unsteady flow topology of claim 1 based on H full-bridge subelement; It is characterized in that: in the described full control switching tube serial module structure; Each brachium pontis is composed in series by the high withstand voltage full-controlled switch pipe of m low frequency, and m is the integer more than or equal to 1, the no value upper limit.
6. according to claim 1 or 5 described mixed multi-level unsteady flow topologys based on H full-bridge subelement, it is characterized in that: the composition mode of brachium pontis is following in the described full control switching tube serial module structure:
The negative electrode of first gate level turn-off thyristor (GTOa1) of first brachium pontis is connected with the anode of second gate level turn-off thyristor (GTOa2) of first brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of first brachium pontis is connected with the anode of the N gate level turn-off thyristor (GTOam) of first brachium pontis, forms first brachium pontis of full control switching tube serial module structure; The negative electrode of first gate level turn-off thyristor (GTOb1) of second brachium pontis is connected with the anode of second gate level turn-off thyristor (GTOb2) of second brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of second brachium pontis is connected with the anode of the M gate level turn-off thyristor (GTObm) of second brachium pontis, forms second brachium pontis of full control switching tube serial module structure; The negative electrode of first gate level turn-off thyristor (GTOc1) of the 3rd brachium pontis is connected with the anode of second gate level turn-off thyristor (GTOc2) of the 3rd brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of the 3rd brachium pontis is connected with the anode of the M gate level turn-off thyristor (GTOcm) of the 3rd brachium pontis, forms the 3rd brachium pontis of full control switching tube serial module structure; The negative electrode of first gate level turn-off thyristor (GTOd1) of the 4th brachium pontis is connected with the anode of second gate level turn-off thyristor (GTOd2) of the 4th brachium pontis; By that analogy; The negative electrode of the M-1 gate level turn-off thyristor of the 4th brachium pontis is connected with the anode of the N gate level turn-off thyristor (GTOdm) of the 4th brachium pontis, forms the 4th brachium pontis of full control switching tube serial module structure.
7. according to the described mixed multi-level unsteady flow topology of claim 1 based on H full-bridge subelement; It is characterized in that; The location swap of the H bridge cascade module of single-phase convertor circuit and full control switching tube serial module structure; One end of promptly full control switching tube serial module structure is connected with the positive direct-current bus, and the other end of controlling the switching tube serial module structure entirely is connected with an end of H bridge cascade module through connecting inductance, and the other end of H bridge cascade module is connected with negative dc bus; Connect inductance and can place between H bridge cascade module and the full control switching tube serial module structure, or between first brachium pontis of full control switching tube serial module structure and second brachium pontis, the 3rd brachium pontis and the 4th brachium pontis, respectively place one and be connected inductance replacement H bridge cascade module and control the inductance that is connected between the switching tube serial module structure entirely.
8. it is described based on the topological control method of the mixed multi-level unsteady flow of H full-bridge subelement to be applied to claim 1; It is characterized in that: to the control method of described H bridge cascade module based on phase-shifting carrier wave PWM modulation technique; Each subelement carrier frequency is identical, phase place mutual deviation 2 π/n; Adopt same modulating wave; Output drive signal is divided into two-way; One the road drives first brachium pontis (IGBT4n-3) of nH full bridge power subelement and the 4th brachium pontis (IGBT4n) of nH full bridge power subelement, and one the tunnel is reverse and the dead band is set to drive second brachium pontis (IGBT4n-2) of nH full bridge power subelement as follows with the 3rd brachium pontis (IGBT4n-1) the PWM modulating wave expression formula of nH full bridge power subelement:
U
tiaozhi=1-2·m·|sinωt|
In the formula, m is the modulation ratio in the phase shift carrier wave PWM modulation system; Angular velocity omega=2 π f, f is the frequency of this topological structure output AC voltage; T is the time; U
TiaozhiBe the PWM modulating wave.
9. it is described based on the topological control method of the mixed multi-level unsteady flow of H full-bridge subelement to be applied to claim 1; It is characterized in that: the control method to described full control switching tube serial module structure is described below: the high withstand voltage full-control type device cascaded H bridge type drives signal of low frequency is the two-way square-wave signal: one road square-wave signal phase place is identical with the modulating wave phase place of described H bridge cascade module; Drive first brachium pontis of full control switching tube serial module structure, control the 4th brachium pontis of switching tube serial module structure entirely; The modulating wave phase place of another road square-wave signal phase place and described H bridge cascade module is opposite, drives second brachium pontis of full control switching tube serial module structure, controls the 3rd brachium pontis of switching tube serial module structure entirely; Half period is controlled first brachium pontis of switching tube serial module structure entirely, is controlled the 4th brachium pontis of switching tube serial module structure entirely before making, H bridge output class is like many level staircase waveform of sinusoidal positive half wave; Back half period is controlled second brachium pontis of switching tube serial module structure entirely, is controlled the 3rd brachium pontis conducting of switching tube serial module structure entirely, and H bridge output class is like many level staircase waveform of sinusoidal negative half-wave; Whole cycle output class is like many level staircase waveform of complete sine wave; Through LC filter output AC sine voltage.
10. it is described based on the topological control method of the mixed multi-level unsteady flow of H full-bridge subelement to be applied to claim 1, and it is characterized in that: following to described capacitance voltage balance control method: voltage sensor is installed at the flying capacitor two ends, gathers n sub-cells capacitance voltage; Compare with given voltage separately; Carry out proportional integral through pi regulator and calculate, with the output valve modulating wave that is added to, with triangular wave relatively; Under the prerequisite that does not influence output waveform; Fine setting full bridge power subelement inserts and the time that breaks away from main circuit structure, thereby the adjustment capacitance voltage makes each power subelement electric voltage equalization.
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