CN102109685B - Multilayer electromagnetism modulating structure and preparation method thereof - Google Patents
Multilayer electromagnetism modulating structure and preparation method thereof Download PDFInfo
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- CN102109685B CN102109685B CN 200910243580 CN200910243580A CN102109685B CN 102109685 B CN102109685 B CN 102109685B CN 200910243580 CN200910243580 CN 200910243580 CN 200910243580 A CN200910243580 A CN 200910243580A CN 102109685 B CN102109685 B CN 102109685B
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Abstract
The invention relates to a multilayer manual electromagnetism modulating structure and a preparation method thereof. In the structure, a plurality of layers of accurately aligned metal subwavelength structures, a medium interlayer and a covering layer form a multi-layer combination to realize various specific electromagnetic modulation functions of frequency selection, filtration, refection reduction, rotation, special refraction and the like. In the preparation method of the multilayer electromagnetism modulating structure, spinning or depositing and accurate alignment overlay processes are used to realize interlayer accurate alignment. When the manual electromagnetic structure of the multilayer laminar structure prepared by the preparation method is used, the electromagnetic coupling between layers can be realized by the accurately aligned metal structures, and the modulating capability of the structure for electromagnetic valves of specific wavelength can be increased.
Description
Technical field
The present invention relates to a kind of metal sub-wavelength structure cell array of utilizing multiple layer combination, it is a kind of artificial structure who the specific wavelength electromagnetic wave is realized specific modulation, and relates to the preparation method that application spin coating, depositing operation and alignment sleeve carving technology are realized this structure.
Background technology
Utilization has the artificial material of the sub-wavelength dimensions of special electromagnetic propagation characteristic and controls the focus that electromagnetic wave propagation is present material physical study forward position.Electromagnetic wave for specific wavelength, can utilize size near the electromagnetic response characteristic of second wavelength metallic structure this wavelength of wavelength 1/3 to 1/30, realize specific electromagnetic signal modulation, and formed by the array that only comprises a kind of second wavelength metallic structure and substrate thereof in common this modulated structure, the modulation function of realization is very limited.In order to address this problem, expand the modulation effect of this structure, the people such as C.M.Bingham utilize two kinds and two or more sub-wavelength metal cellular constructions, the two-dimensional modulation metal sub-wavelength modulation device of realizing in the mode of plane combination, as document 1, " the artificial super material of plane wallpaper combination is in the new application of terahertz frequency range " (Planar wallpaper group metamaterials for novel terahertz applications), be stated from " OPTICS EXPRESS ", 2008, Vol 16,18565 is disclosed.It is a quantum jump that this modulated structure only has the modulated structure of a kind of sub-wavelength unit relatively in the past, but modulation effect is still limited, reason is: realize the combination of multiple sub-wavelength structure unit in same plane, will be take the distribution density that reduces correlation unit as cost, so its modulation effect is significantly weakened.in addition, a plurality of materials with second wavelength metallic structure are superimposed, also can realize similar hybrid modulation function, as document 2, " the 3-dimensional multi-layered metal column one opening resonator structure that utilizes dark X ray exposure to realize " (Towards three-dimensional and multilayer rod-split-ringmetamaterial structures by means of deep x-ray lithography), be stated from " Applied PhysicsLetter ", 2007, Vol 90, 254106, but the so-called three-dimensional structure in the document, essence is that a plurality of single layer structure stacks are put together, a plurality of substrates have been comprised, therefore also therefore decrease of the transmitance of combined material, and layer and interfloor distance be (relative wavelength) far away, layer also has certain randomness with the relative position of the sub-wavelength metal array of interlayer because of better simply stacking, therefore, this three-dimensional modulated structure also has larger defective.
Summary of the invention
The object of the present invention is to provide a kind of electromagnetism modulated structure of realizing multiple layer combination on same substrate; Namely utilize that interlayer is accurately aimed at, have different metal sub-wavelength cell array or different medium combination of materials and the multilayer artificial electromagnetic modulated structure realized, realize functions such as the electromagnetic frequency-selecting of specific wavelength, filtering, anti-reflection, optically-active and special refractions.
The preparation method that another object of the present invention is to provide a kind of electromagnetism modulated structure of multiple layer combination namely utilizes spin-on deposition and alignment sleeve carving method, makes the multiple layer combination artificial electromagnetic modulated structure that interlayer is accurately aimed at.
Technical scheme of the present invention is as follows:
The artificial electromagnetic modulated structure of multiple layer combination provided by the invention, it comprises:
Substrate material layer;
Cover the orlop metal sub-wavelength cell array layer on this substrate material layer;
Stack is covered in the periodic unit of one deck at least layer on described orlop metal sub-wavelength cell array layer successively;
Every one deck periodic unit layer forms by a medium middle layer and the metal sub-wavelength cell array layer that is covered on this medium middle layer; Described medium middle layer is insulation material layer, and its thickness is that 1nm is to 100mm.
The artificial electromagnetic modulated structure of multiple layer combination provided by the invention also can comprise: be covered in the dielectric passivation on the metal sub-wavelength array layer of the superiors' periodic unit layer; Described dielectric passivation is insulation material layer, and its thickness is that 1nm is to 100mm.
Described substrate material layer is not less than 50% material layer for the smooth electromagnetic transmitance for the treatment of the modulation target wavelength of cleaning, and the electromagnetic target wavelength of target wavelength described to be modulated is that 10mm is to any wavelength or the wavelength period of 200nm.
The shape of the metal sub-wavelength unit of the shape of the metal sub-wavelength unit of described orlop metal sub-wavelength cell array layer and the metal sub-wavelength cell array layer in each periodic unit layer is annular, side's annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The geometric center spacing of the minor axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, the major axis of ellipse annular, ellipse annular, the length of line strip and composite figure is all between the 1/3-1/30 of the electromagnetic target wavelength of target wavelength to be modulated.
The projection overlapping area of metal sub-wavelength cell array on substrate material layer in metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Dislocation 0-1/2 metal sub-wavelength unit, metal sub-wavelength unit in metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength finite element rotation 0-180 degree in metal sub-wavelength cell array layer in two adjacent periodic unit layers.
The spacing of the spacing of the adjacent metal sub-wavelength unit in described orlop metal sub-wavelength cell array layer and the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in each periodic unit layer is zero to treating the modulated electromagnetic wave wavelength.
The preparation method of the electromagnetism modulated structure of multiple layer combination provided by the invention, its preparation process comprises:
1) apply photoresist or electronic corrosion-resistant on substrate material layer 1, prepare by photoetching or electron-beam direct writing method the first module array of structures figure that material is photoresist or electronic corrosion-resistant, this material is that the metal sub-wavelength cell array figure in orlop metal sub-wavelength cell array layer in the electromagnetism modulated structure of first module array of structures figure and multiple layer combination of photoresist or electronic corrosion-resistant is consistent; And simultaneously near being the first module array of structures figure of photoresist or electronic corrosion-resistant, this material prepares at least three the first pattern alignment marks;
2) in step 1) in material be plated metal on the first module array of structures figure of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares orlop metal sub-wavelength cell array layer 2 and at least three the first pattern alignment marks of being covered on substrate material layer;
3) utilize spin coating or membrane deposition method, in step 2) orlop metal sub-wavelength cell array layer 2 on apply or the electromagnetism modulated structure of deposition preparation multiple layer combination in the medium middle layer 3 of orlop periodic unit layer; Described medium middle layer is insulation material layer, and its thickness is that 1nm is to 100mm;
4) in step 3) medium middle layer 3 on apply photoresist or electronic corrosion-resistant, by photoetching or electron-beam direct writing method, preparation one deck material is the second unit array of structures figure of photoresist or electronic corrosion-resistant on described medium middle layer 3; Perhaps preparation one deck material is second unit array of structures figure and at least three second graph alignment marks of photoresist or electronic corrosion-resistant on described medium middle layer; This material is that the metal sub-wavelength cell array figure in orlop periodic unit layer in the electromagnetism modulated structure of second unit array of structures figure and multiple layer combination of photoresist or electronic corrosion-resistant is consistent;
5) in step 4) in material be plated metal on the second unit array of structures figure of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares the metal sub-wavelength cell array layer on the medium middle layer that is covered in orlop periodic unit layer; Perhaps prepare metal sub-wavelength cell array layer and at least three second graph alignment marks on the medium middle layer that is covered in orlop periodic unit layer;
6) repeatedly repeat above-mentioned steps 3) to step 5), make the electromagnetism modulated structure of multiple layer combination.
The preparation method of the electromagnetism modulated structure of multiple layer combination provided by the invention, its step also comprises step 7); Described step 7) be on metal sub-wavelength cell array layer in top layer periodic unit layer, to utilize spin coating or membrane deposition method to cover one deck dielectric passivation; Described dielectric passivation is insulation material layer, and its thickness is that 1nm is to 100mm.
Material is that the second unit array of structures figure of photoresist or electronic corrosion-resistant is aimed at up and down with the metal sub-wavelength cell array in orlop metal sub-wavelength cell array layer 2;
Described being aligned to up and down adopted mask alignment or adopted Coordinates calibration;
Described mask alignment is as follows: utilize the optical microscope of exposure machine mask holder top, at first find the pattern alignment mark on mask plate in microscopic fields of view; Then the material of gluing is moved on to the mask below, find the pattern alignment mark of material surface, regulate at last the position of material, by translation and rotation, make these two pattern alignment marks overlapping, reach accurately and aim at, then seek other pattern alignment mark, more respectively the corresponding pattern alignment mark of the figure on material is aimed at it; Complete when overlapping when the pattern alignment mark of the pattern alignment mark on specimen material and mask, realize that specimen material aims at the accurate of mask graph;
Described Coordinates calibration is as follows: utilize scanning electron microscope or optical microscope to find pattern alignment mark on material in the visual field, record the coordinate of pattern alignment mark by system's scale, set up the relative coordinate system of material sample, to need again the graphic structure accurately aimed to expose in the relative coordinate position of correspondence, realize that specimen material aims at the accurate of exposure figure.
Described substrate material layer is not less than 50% material layer for the smooth electromagnetic transmitance for the treatment of the modulation target wavelength of cleaning, and the electromagnetic target wavelength of target wavelength described to be modulated is that 10mm is to any wavelength or the wavelength period of 200nm.
The metal sub-wavelength cell configuration of the metal sub-wavelength cell array layer in the metal sub-wavelength cell configuration of described orlop metal sub-wavelength cell array layer and each periodic unit layer is annular, side annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The geometric center spacing of the minor axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, the major axis of ellipse annular, ellipse annular, the length of line strip and composite figure is all between the 1/3-1/30 of the electromagnetic target wavelength of target wavelength to be modulated.
The projection overlapping area of metal sub-wavelength cell array on substrate material layer 1 in metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Dislocation 0-1/2 metal sub-wavelength unit, metal sub-wavelength unit in metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength finite element rotation 0-180 degree in metal sub-wavelength cell array layer in two adjacent periodic unit layers.
The spacing of the spacing of the adjacent metal sub-wavelength unit in described orlop metal sub-wavelength cell array layer and the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in each periodic unit layer is zero to treating the modulated electromagnetic wave wavelength.
The invention has the advantages that:
The present invention is by a kind of electromagnetism modulated structure of realizing a kind of sub-wavelength metal unit that comprises multilayer on same substrate, overcome the shortcoming of single second wavelength metallic structure electromagnetism modulation function dullness, can have specific electromagnetism modulation function by multilayer stratiform combined structure design neatly, as the special media material of the functions such as frequency-selecting, filtering, anti-reflection, optically-active and special refraction.The modulated structure of this multilayer stratiform combination can be avoided the serious limited shortcoming of composite figure density in planar figure combination electromagnetism modulated structure, and, the heavy losses of the electromagnetic wave energy that the modulated structure of second wavelength metallic structure combination causes on the multilayer stratiform textural association of realizing on same substrate has also been avoided by a plurality of substrates; Simultaneously, the invention allows for and a kind ofly can realize that the interlayer metal structure accurately aims at and prepare the preparation method of corresponding multilayer stratiform hybrid modulation structure, utilize the electromagnetism modulated structure of the sub-wavelength metal unit of the prepared multilayer multilayer of this preparation method can realize by the metal construction of accurately aiming at the electromagnetic coupled pattern of layer and interlayer, treat but increased the electromagnetic modularity of modulating target wavelength.
Description of drawings
The structural representation of the electromagnetism modulated structure of Fig. 1 multiple layer combination of the present invention;
Fig. 2 is the schematic flow sheet of the electromagnetism modulated structure of preparation multiple layer combination of the present invention; In Fig. 2: A to G represents to prepare the step of the electromagnetism modulated structure of multiple layer combination;
In A figure 1 is substrate material layer;
B figure expression utilizes photoetching and metal deposition-stripping means to realize orlop metal sub-wavelength cell array 2;
C figure expression realizes medium middle layer 3 in ground floor periodic unit layer by spin coating or deposition process;
D figure expression realizes the metal sub-wavelength cell array 4 in ground floor periodic unit layer by accurately aiming at exposure and metal deposition-stripping means;
E figure expression is by spin coating or deposition process, realizes the medium middle layer 5 in second layer periodic unit layer on the metal sub-wavelength cell array 4 in orlop periodic unit layer;
F schemes expression by repeating the step in C figure and D figure, constantly sets up new medium middle layer and metal sub-wavelength cell array, the periodic unit layer that forms at last; The suspension points of 6 indications represents the step that dispenses; 7 represent the metal sub-wavelength cell array layer of the superiors' periodic unit layer;
G figure is illustrated on the metal sub-wavelength cell array layer 7 of the superiors, utilizes the methods such as deposition, spin coating or coating, encapsulation to realize dielectric passivation 8; G figure is the structural representation of the electromagnetism modulated structure of the final multiple layer combination of the present invention for preparing.
The electromagnetism modulated structure of the multilayer of Fig. 3 preparation of the present invention (bilayer) combination is to the electromagnetic modulated structure schematic diagram of terahertz frequency range.
Polarization situation 1 in Fig. 3: represent that the electromagnetic incident polarization electromagnetic wave of target wavelength to be modulated vertically passes the electromagnetism modulated structure of multiple layer combination of the present invention, and its electric field component is parallel to the opening edge of cellular construction in metal openings resonant ring cell array;
A in Fig. 3, B, C, D figure has shown that respectively double-decker and single layer structure (there is no the metal sub-wavelength cell array on middle layer and middle layer) treat the contrast of modulated electromagnetic wave transmission spectrum modulation effect, wherein solid line represents the electromagnetism transmission spectrum after double-decker is modulated, and black dotted lines represents the single layer structure modulation effect; Wherein in Fig. 3, A figure and C figure expression are to the modulation with polarization situation 1 incident electromagnetic wave, and in Fig. 3, B figure and D figure represent the modulation with polarization situation 2 incident electromagnetic waves; And the modulated structure that uses in A figure and B figure in Fig. 3 is based upon on quartz substrate, and in Fig. 3 C scheme and D figure in the modulated structure that uses be based upon on silicon substrate.
Embodiment
Below in conjunction with embodiment and accompanying drawing, electromagnetism modulated structure of multiple layer combination of the present invention and preparation method thereof is described in detail:
Embodiment 1
Electromagnetic wave for the target wavelength to be modulated of different wave length, should select the substrate material layer, medium middle layer and the dielectric passivation that have accordingly the good transmission characteristic, as being the ultraviolet ray of 200nm-400nm for target wavelength to be modulated, can select the materials such as lead fluoride; Be the visible light of 390nm-770nm for target wavelength to be modulated, can select the materials such as quartz, glass or pet polymer; Be the infrared ray of 750nm-1000um for target wavelength to be modulated, can select the materials such as iron-doped zinc selenide infrared transparent pottery or JGS3 infrared quartz glass; Be the terahertz electromagnetic wave of 300um-1mm for target wavelength to be modulated, can select the materials such as silicon, polytetrafluoroethylplastic plastic or polyimide resin; Be the microwave of 2mm-1mm for target wavelength to be modulated, can select the materials such as acrylic plastering.Modulate near the visible light wavelength 580nm in the present embodiment, the material of the substrate material layer 1 of therefore selecting and medium middle layer 3, dielectric passivation 8 is near the silicon dioxide of visible transmission more than 90% wavelength 580nm, realizes multiple layer combination electromagnetism modulated structure by step shown in Figure 2:
1) apply electronic corrosion-resistant PMMA on silicon dioxide substrates material layer 1, prepare by the electron-beam direct writing method first module array of structures figure that material is PMMA, in this figure, the array element structure is that 2 diameters are 90nm, spacing is the round dot of 60nm, its distance of center circle 150nm, period pitch is 400nm; Array area is 100 microns * 100 microns; Simultaneously near being the first module array of structures figure of PMMA, this material prepares the cruciform pattern alignment mark that at least three materials are PMMA;
2) in step 1) in prepared first module array of structures figure on deposition 90nm thick argent, and the PMMA solution-off is peeled off, prepare orlop argent sub-wavelength cell array layer 2 and three materials of being covered on silicon dioxide substrates material layer 1 and be silver-colored cruciform the first pattern alignment mark; The cell array figure and step 1 of this orlop argent sub-wavelength cell array layer 2) in first module array of structures figure identical;
3) utilize the magnetron sputtering deposition method, in step 2) orlop argent sub-wavelength cell array layer 2 on the silica dioxide medium middle layer 3 of deposition preparation orlop periodic unit layer, its thickness is 100nm;
4) in step 3) silica dioxide medium middle layer 3 on PMMA in spin coating, utilize the scanning electron microscope in the electron-beam direct writing system, observe step 2) in prepared the first pattern alignment mark position, after its relative position record, set up new coordinate system, mark step 3) in the lower left corner coordinate of prepared orlop argent sub-wavelength cell array layer 2, and from this coordinate position, expose to the upper right corner from the lower left corner, develop, by the electron-beam direct writing method, preparation one deck material is the second unit array of structures figure of PMMA on described medium middle layer 3, identical with first module array of structures figure in this figure, the center of the circle center line connecting of 2 round dots in cellular construction is aimed at fully, but 2 round dots in adjacent cellular construction are all spent as turning axle is rotated counterclockwise 60 take the center of circle center line connecting, simultaneously, near being the second unit array of structures figure of PMMA, this material prepares the cruciform pattern alignment mark that at least three materials are PMMA,
5) in step 4) in material be plated metal silver on the second unit array of structures figure of PMMA, and the PMMA solution-off is peeled off, prepare argent sub-wavelength cell array layer 4 on the medium middle layer that is covered in orlop periodic unit layer and three matter materials and be the cruciform second graph alignment marks of silver;
6) continue to repeat above-mentioned steps 3) to step 5) five times, make the electromagnetism modulated structure of six layers of combination;
7) utilize the magnetron sputtering deposition method, in step 6) on argent sub-wavelength cell array layer 7 in the top layer periodic unit layer of electromagnetism modulated structure of prepared six layers of combination, utilize the ion sputtering deposition method to prepare silica dioxide medium overlayer 8, its thickness is 80nm.
Near above-mentioned all visible lights of each argent sub-wavelength cell array corresponding wavelength 580nm all have different electromagnetism frequency-selecting filter effects under the incident of different polarization direction, but there is rotation in the position right due to metal round dot between every adjacent two layers metal sub-wavelength cell array, therefore the polarization dependence of the electromagnetic response of multiple layer combination material reduces greatly due to the symmetry characteristic of structure, electromagnetic wave to this wavelength can produce corresponding modulation in different polarization angle incident, has formed the multiple layer combination electromagnetism modulated structure with new complex modulated effect.
Preparation has the bilayer combination terahertz electromagnetic wave modulated structure of double-deck antisymmetry split ring resonator metal construction array on silicon substrate, comprises the following steps:
1) spin coating one deck ultraviolet photoresist S1813 on the silicon substrate (A figure in Fig. 2) of 800 micron thickness, system exposes, develops the mask plate with split ring resonator array pattern and four block graphics alignment marks by uv-exposure, split ring resonator array and pattern alignment mark are transferred on photoresist, wherein the size dimension of split ring resonator unit is 45 microns, 60 microns of Cycle Lengths, array size are 8 millimeters * 8 millimeters;
2) utilize the thermal evaporation depositing system in step 1) thick crome metal and the thick metallic gold of 100nm as transition bed of deposition one deck 5nm on silicon substrate after processing, again this sample is placed into acetone photoresist is dissolved, make the cell array structure of metal and pattern alignment mark realize (the B figure in Fig. 2) on silicon substrate;
3) in step 2) polyimide resin material of spin coating one deck 2 micron thickness as middle dielectric layer, then was placed in 130 ℃ of baking ovens baking one hour with it on silicon substrate after processing, made polyimide stable (the C figure in Fig. 2);
4) in step 3) spin coating one deck ultraviolet photoresist S1813 again on sample after processing, by the microscope of uv-exposure system, at first find the pattern alignment mark on mask plate in the visual field; This mask have with step 1 in mask on feature size, shape identical split ring resonator array all, but the opposite direction of split ring; Again glue-coated sample is moved on to subsequently below mask, find the pattern alignment mark of the minimum of material surface, regulate the position of material, by translation and rotation, make these two pattern alignment marks overlapping to reach accurately aligning, then seek other pattern alignment mark, more respectively the pattern alignment mark on material is aimed at it, when all pattern alignment marks on specimen material all with mask on the graph of a correspondence alignment mark complete when overlapping, namely realized accurate aligning; Expose at last, develop, split ring resonator array and alignment mark figure are transferred on photoresist on polyimide layer, wherein split ring resonator array element size and Cycle Length, array size all with step 1) in the split ring resonator array identical, but opening direction is opposite;
5), in step 4) utilize on sample after processing the thermal evaporation depositing system to deposit thick crome metal and the thick metallic gold of 100nm as transition bed of one deck 5nm on above-mentioned substrate, this sample is placed into acetone again photoresist is dissolved, the cell array structure that makes second layer metal is realized (as the figure of the D in Fig. 2) on the polyimide middle layer; Thereby realized a kind of electromagnetism modulated structure of multilayer (bilayer) combination with double-deck antisymmetry split ring resonator metal construction array for preparing on silicon substrate; The electromagnetism modulated structure of this bilayer combination has specific filtering and frequency-selecting function in the terahertz frequency range of 200-600 micron wave length.
For near 2 microns of wavelength with 1.5 microns near electromagnetic wave carry out simultaneously the artificial electromagnetic modulated structure of the multiple layer combination of compound Absorption modulation, performing step is as follows:
1) select the transparent ito glass substrate of near-infrared electromagnetic ripple; Spin coating last layer electronic corrosion-resistant PMMA on the ITO substrate, utilize e-beam direct-writing exposure, development, at first form one by element length 300nm on PMMA, the U-shaped structural unit of live width 60nm forms, Cycle Length 500nm, area is the square first module array of structures figure of 0.8 millimeter * 0.8 millimeter, and forms respectively four criss-cross pattern alignment marks simultaneously near four angles of its array;
2) utilize the thick argent of electron-beam evaporation 50nm to step 1) in the surface of prepared sample, again sample is immersed in acetone soln with the photoresist dissolving and with the metal-stripping above photoresist, the argent that deposits in former photoetching offset plate figure position remains, so step 1) array of structures of first module described in figure is shifted by photoetching offset plate figure becomes argent structure, i.e. orlop metal sub-wavelength cellular construction array; Simultaneously, four the first pattern alignment marks also shift the first pattern alignment mark that becomes the argent material.
3) in step 2) in prepared sample surfaces utilize the thick MgF of plasma sputtering method deposition one deck 50nm
2Film, i.e. medium middle layer in orlop periodic unit layer;
4) in step 3) in prepared sample surfaces spin coating one deck PMMA glue, and enter the electron-beam direct writing system, at first utilize scanning electronic microscope observation to arrive step 2) in prepared the first pattern alignment mark position, after its relative position record, set up new coordinate system, mark step 2) in the lower left corner coordinate of U-shaped array structure, and from this coordinate position, expose to the upper right corner from the lower left corner, develop, realize one by element length 200nm on PMMA glue, the U-shaped structural unit of live width 50nm forms, Cycle Length 500nm, area is the square sub-wavelength structure array pattern of 0.8mm * 0.8mm, its U-shaped cellular construction opening direction is identical with U-shaped cellular construction opening direction in orlop metal sub-wavelength cellular construction array,
5) by with step 2) identical method, the figure on PMMA glue is shifted becomes the argent structure, realizes being covered in the argent sub-wavelength cellular construction array on the medium middle layer;
6) by repeating step 4) with 5), realize successively second, third periodic unit layer, its medium middle layer is the thick MgF of 50nm
2Argent sub-wavelength cellular construction array in the second round elementary layer is identical with the parameter of orlop metal sub-wavelength cellular construction array, and cellular construction is rotated counterclockwise 90 degree take the U-shaped structure centre as axle; Argent sub-wavelength cellular construction array in the period 3 elementary layer is identical with the parameter of metal sub-wavelength cellular construction array in orlop periodic unit layer, and cellular construction is rotated counterclockwise 90 degree take the U-shaped structure centre as axle;
7) in step 6) prepared sample surfaces, be that argent sub-wavelength cellular construction array in the period 3 elementary layer covers the thick HSQ glue of one deck 80nm, and utilize the baking oven baking of 135 ℃ to make it firm in 1 hour, become dielectric passivation, just complete the artificial electromagnetic modulated structure of the multiple layer combination of the present embodiment this moment.
Embodiment 4
The bilayer combination terahertz electromagnetic wave modulated structure that utilizes respectively SU-8 glue to realize as the medium middle layer on quartz substrate and silicon substrate, its preparation process is similar to the preparation method in embodiment 2, difference is: the dimension of picture of 1) selecting is: 38 microns of split ring resonator element lengths, 55 microns of Cycle Lengths; 2) medium middle layer and dielectric passivation adopt SU-8 glue, and spin coating thickness is 30 microns; 3) between levels, the resonant ring opening direction is identical; The electromagnetism modulated structure of this multilayer (bilayer) combination under different polarization incident situation terahertz frequency range (750 microns to 150 microns of wavelength) transmission spectrum and the contrast of corresponding monolayer material as shown in Figure 3:
For quartz substrate, under two kinds of different polarization incident situations, the not significantly change of absorption peak position (as the figure of the A in Fig. 3 and B figure) in its single, double layer transmission spectrum; And the double-decker of silicon substrate and single layer structure have produced larger variation (as the figure of the C in Fig. 3 and D figure) two kinds of polarization situations are next: when the incident electric field component is parallel to metal openings resonant ring unit opening edge (C in Fig. 3 schemes), comprised not only in double-deck transmission spectrum on silicon substrate that single layer structure is at 0.4THz, 1.2THz the electromagnetic response absorption peak, near 0.6THz and 1.8THz, absorption peak has also appearred; And electric field component the electroresponse peak identical with individual layer occur at 0.9THz in the double-decker transmission spectrum during perpendicular to the becket opening edge (the D figure in Fig. 3), and the frequency range more than 0.9THz almost completely is absorbed; This is to have changed the dielectric environment of terahertz sub-wavelength metal resonant element due to substrate and filler, and therefore corresponding change can occur corresponding modulated electromagnetic wave response frequency; Because SU8 glue has and quartzy close specific inductive capacity, therefore, for the double-decker on quartz substrate, its upper/lower layer metallic sub-wavelength unit is in similar dielectric environment, have close electromagnetic response frequency, so its single double-deck electromagnetic response does not occur significantly to change.And for the double-decker on silicon substrate, its upper/lower layer metallic sub-wavelength unit is in diverse dielectric environment, its double-deck transmission spectrum, be equivalent to the stack of two kinds of different responses, thereby produced violent variation-almost be equivalent to the stack of quartz substrate and silicon substrate single-layer metal sub-wavelength structure electromagnetic response, thereby set up a kind of multilayer dimension terahertz electromagnetic wave (750 microns-150 microns) transmission spectrum modulated structure that utilizes dielectric environment between different layers and realize.
Claims (7)
1. the preparation method of the electromagnetism modulated structure of a multiple layer combination, its preparation process comprises:
1) at upper photoresist or the electronic corrosion-resistant of applying of substrate material layer (1), prepare by photoetching or electron-beam direct writing method the first module array of structures figure that material is photoresist or electronic corrosion-resistant, this material is that the metal sub-wavelength cell array figure in orlop metal sub-wavelength cell array layer in the electromagnetism modulated structure of first module array of structures figure and multiple layer combination of photoresist or electronic corrosion-resistant is consistent; And simultaneously near being the first module array of structures figure of photoresist or electronic corrosion-resistant, this material prepares at least three the first pattern alignment marks;
2) material in step 1) is plated metal on the first module array of structures figure of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares orlop metal sub-wavelength cell array layer (2) and at least three the first pattern alignment marks of being covered on substrate material layer;
3) utilize spin coating or membrane deposition method, in step 2) orlop metal sub-wavelength cell array layer (2) upper apply or the electromagnetism modulated structure of deposition preparation multiple layer combination in the medium middle layer (3) of orlop periodic unit layer; Described medium middle layer is insulation material layer, and its thickness is that 1nm is to 100mm;
4) upper photoresist or the electronic corrosion-resistant of applying in the medium middle layer (3) of step 3), by photoetching or electron-beam direct writing method, upper preparation one deck material is the second unit array of structures figure of photoresist or electronic corrosion-resistant in described medium middle layer (3); Perhaps preparation one deck material is second unit array of structures figure and at least three second graph alignment marks of photoresist or electronic corrosion-resistant on described medium middle layer; This material is that the metal sub-wavelength cell array figure in orlop periodic unit layer in the electromagnetism modulated structure of second unit array of structures figure and multiple layer combination of photoresist or electronic corrosion-resistant is consistent;
5) material in step 4) is plated metal on the second unit array of structures figure of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares the metal sub-wavelength cell array layer on the medium middle layer that is covered in orlop periodic unit layer; Perhaps prepare metal sub-wavelength cell array layer and at least three second graph alignment marks on the medium middle layer that is covered in orlop periodic unit layer;
6) repeatedly repeat above-mentioned steps 3) to step 5), make the electromagnetism modulated structure of multiple layer combination.
2. press the preparation method of the electromagnetism modulated structure of multiple layer combination claimed in claim 1, its step also comprises step 7); Described step 7) is on metal sub-wavelength cell array layer in top layer periodic unit layer, to utilize spin coating or membrane deposition method to cover one deck dielectric passivation; Described dielectric passivation is insulation material layer, and its thickness is that 1nm is to 100mm.
3. press the preparation method of the electromagnetism modulated structure of multiple layer combination claimed in claim 1, it is characterized in that, material is that the second unit array of structures figure of photoresist or electronic corrosion-resistant is aimed at up and down with the metal sub-wavelength cell array in orlop metal sub-wavelength cell array layer (2);
Described being aligned to up and down adopted mask registration or adopted Coordinates calibration;
Described mask registration is as follows: utilize the optical microscope of exposure machine mask holder top, at first find the pattern alignment mark on mask in microscopic fields of view; Then the material of gluing is moved on to the mask below, find the pattern alignment mark of material surface, regulate at last the position of material, by translation and rotation, make these two pattern alignment marks overlapping, reach accurately and aim at, then seek other pattern alignment mark, more respectively the corresponding pattern alignment mark of the figure on material is aimed at it; Complete when overlapping when the pattern alignment mark of the pattern alignment mark on specimen material and mask, realize that specimen material aims at the accurate of mask graph;
Described Coordinates calibration is as follows: utilize scanning electron microscope or optical microscope to find pattern alignment mark on material in the visual field, record the coordinate of pattern alignment mark by system's scale, set up the relative coordinate system of material sample, to need again the graphic structure accurately aimed to expose in the relative coordinate position of correspondence, realize that specimen material aims at the accurate of exposure figure.
4. press the preparation method of the electromagnetism modulated structure of multiple layer combination claimed in claim 1, it is characterized in that, described substrate material layer is not less than 50% material layer for the smooth electromagnetic transmitance for the treatment of the modulation target wavelength of cleaning, and the electromagnetic target wavelength of target wavelength described to be modulated is that 10mm is to any wavelength or the wavelength period of 200nm.
5. press the preparation method of the electromagnetism modulated structure of multiple layer combination claimed in claim 1, it is characterized in that, the metal sub-wavelength cell configuration of the metal sub-wavelength cell array layer in the metal sub-wavelength cell configuration of described orlop metal sub-wavelength cell array layer and each periodic unit layer is annular, side annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The length of the major axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, oval ring, the minor axis of oval ring, line strip and the geometric center spacing of composite figure are all between the 1/3-1/30 of the electromagnetic target wavelength of target wavelength to be modulated.
6. press the preparation method of the electromagnetism modulated structure of multiple layer combination claimed in claim 1, it is characterized in that, the projection overlapping area of metal sub-wavelength cell array on substrate material layer (1) in the metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Dislocation 0-1/2 metal sub-wavelength unit, metal sub-wavelength unit in metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength finite element rotation 0-180 degree in metal sub-wavelength cell array layer in two adjacent periodic unit layers.
7. press the preparation method of the electromagnetism modulated structure of multiple layer combination claimed in claim 1, it is characterized in that, the spacing of the spacing of the adjacent metal sub-wavelength unit in described orlop metal sub-wavelength cell array layer and the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in each periodic unit layer is zero to treating in the modulated electromagnetic wave wavelength coverage.
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| CN102480003B (en) * | 2011-03-25 | 2013-02-13 | 深圳光启高等理工研究院 | Preparation method of metamaterial and metamaterial |
| CN102480054B (en) * | 2011-09-30 | 2013-03-13 | 深圳光启高等理工研究院 | Semi-fluid meta-material and preparation method thereof |
| CN102692733B (en) * | 2012-05-24 | 2014-08-20 | 哈尔滨工程大学 | Multimodal cross polarization filter based on metamaterials |
| CN102821589B (en) * | 2012-08-03 | 2015-07-01 | 深圳光启创新技术有限公司 | Wave absorbing material |
| CN104682008A (en) * | 2013-12-03 | 2015-06-03 | 深圳光启创新技术有限公司 | Wave-transparent meta-material |
| CN104505598A (en) * | 2014-12-17 | 2015-04-08 | 国家纳米科学中心 | Metal/flexible medium layer/metal periodic structure wave-absorbing material and preparation method thereof |
| CN108132582B (en) * | 2016-12-01 | 2020-06-09 | 清华大学 | Photoetching mask plate |
| CN108132579B (en) * | 2016-12-01 | 2020-09-25 | 清华大学 | Photoetching mask plate |
| CN108957603B (en) * | 2018-07-17 | 2020-11-17 | 中国科学院光电技术研究所 | Ultra-wideband electromagnetic absorption material based on exchange principle of propagation waves and super-structured surface waves in multi-layer sub-wavelength structure |
| CN112436287B (en) * | 2020-11-30 | 2022-07-29 | 江西师范大学 | Electromagnetic super surface, preparation method thereof and nano broadband notch filter |
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| CN101517474A (en) * | 2006-05-13 | 2009-08-26 | 卢森特技术有限公司 | Nonlinear optical devices based on metamaterials |
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|---|---|---|---|---|
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Non-Patent Citations (3)
| Title |
|---|
| NA LIU et al.Three-dimensional photonic metamaterials at optical frequencies.《nature materials》.2008,第7卷第31页左栏第2段到第33页右栏第1段, 第35页右栏倒数第2-1段、图1-3. * |
| Three-dimensional photonic metamaterials at optical frequencies;NA LIU et al;《nature materials》;20080131;第7卷;第31页左栏第2段到第33页右栏第1段, 第35页右栏倒数第2-1段、图1-3 * |
| Towards three-dimensional and multilayer rod-split-ring metamaterial structures by means of deep x-ray lithography;B. D. F. Casse et al;《APPLIED PHYSICS LETTERS》;20070622;第90卷;第254106-1页到第254106-3页 * |
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