CN102109685A - Multilayer electromagnetism modulating structure and preparation method thereof - Google Patents
Multilayer electromagnetism modulating structure and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a multilayer manual electromagnetism modulating structure and a preparation method thereof. In the structure, a plurality of layers of accurately aligned metal subwavelength structures, a medium interlayer and a covering layer form a multi-layer combination to realize various specific electromagnetic modulation functions of frequency selection, filtration, refection reduction, rotation, special refraction and the like. In the preparation method of the multilayer electromagnetism modulating structure, spinning or depositing and accurate alignment overlay processes are used to realize interlayer accurate alignment. When the manual electromagnetic structure of the multilayer laminar structure prepared by the preparation method is used, the electromagnetic coupling between layers can be realized by the accurately aligned metal structures, and the modulating capability of the structure for electromagnetic valves of specific wavelength can be increased.
Description
Technical field
The present invention relates to a kind of metal sub-wavelength structure cell array of utilizing multiple layer combination, it is a kind of artificial structure to specific wavelength electromagnetic wave realization specific modulation, and relates to the preparation method that application spin coating, depositing operation and alignment sleeve carving technology are realized this structure.
Background technology
Utilization has the artificial material of the sub-wavelength dimensions of special electromagnetic propagation characteristic and controls the focus that electromagnetic wave propagation is present material physical study forward position.Electromagnetic wave for specific wavelength, can utilize near second wavelength metallic structure the electromagnetic response characteristic this wavelength of size at wavelength 1/3 to 1/30, realize specific electromagnetic signal modulation, and form by array that only comprises a kind of second wavelength metallic structure and substrate thereof in the common this modulated structure, the modulation function of realization is very limited.In order to address this problem, expand the modulation effect of this structure, people such as C.M.Bingham utilize two kinds and two or more sub-wavelength metal cellular constructions, the two-dimensional modulation metal sub-wavelength modulation device that the mode that makes up with the plane realizes, as document 1, " the artificial super material of plane wallpaper combination is in the THZ tera hertz new application of frequency range now " (Planar wallpaper group metamaterials for novel terahertz applications), be stated from " OPTICS EXPRESS ", 2008, Vol 16,18565 is disclosed.It is a quantum jump that this modulated structure has only the modulated structure of a kind of sub-wavelength unit relatively in the past, but modulation effect is still limited, reason is: realize the combination of multiple sub-wavelength structure unit in same plane, will be cost with the distribution density that reduces correlation unit, so its modulation effect be weakened significantly.In addition, a plurality of materials with second wavelength metallic structure are superimposed, also can realize similarly making up modulation function, as document 2, " the 3-dimensional multi-layered metal column one opening resonator structure that utilizes dark X ray exposure to realize " (Towards three-dimensional and multilayer rod-split-ringmetamaterial structures by means of deep x-ray lithography), be stated from " Applied PhysicsLetter ", 2007, Vol 90,254106, but the so-called three-dimensional structure in the document, essence is that a plurality of single layer structure stacks are put together, a plurality of substrates have been comprised, therefore the transmitance of combined material also so significantly reduces, and layer and interfloor distance (relative wavelength) far away, layer also has certain randomness because of better simply stacking with the relative position of the sub-wavelength metal array of interlayer, therefore, this three-dimensional modulated structure also has big defective.
Summary of the invention
The object of the present invention is to provide a kind of electromagnetism modulated structure of on same substrate, realizing multiple layer combination; Promptly utilize that interlayer is accurately aimed at, have different metal sub-wavelength cell array or different medium combination of materials and the multilayer artificial electromagnetic modulated structure realized, realize functions such as the electromagnetic frequency-selecting of specific wavelength, filtering, anti-reflection, optically-active and special refractions.
The preparation method that another object of the present invention is to provide a kind of electromagnetism modulated structure of multiple layer combination promptly utilizes spin-on deposition and alignment sleeve carving method, makes the multiple layer combination artificial electromagnetic modulated structure that interlayer is accurately aimed at.
Technical scheme of the present invention is as follows:
The artificial electromagnetic modulated structure of multiple layer combination provided by the invention, it comprises:
Substrate material layer;
Cover the orlop metal sub-wavelength cell array layer on this substrate material layer;
Stack is covered in the periodic unit of one deck at least layer on the described orlop metal sub-wavelength cell array layer successively;
Each layer periodic unit layer is formed by a medium middle layer and the metal sub-wavelength cell array layer that is covered on this medium middle layer; Described medium middle layer is an insulation material layer, and its thickness is that 1nm is to 100mm.
The artificial electromagnetic modulated structure of multiple layer combination provided by the invention also can comprise: be covered in the dielectric passivation on the metal sub-wavelength array layer of the superiors' periodic unit layer; Described dielectric passivation is an insulation material layer, and its thickness is that 1nm is to 100mm.
Described substrate material layer is treated the modulation target wavelength for cleaning is smooth electromagnetic transmitance is not less than 50% material layer, and the described electromagnetic target wavelength of waiting to modulate target wavelength is any wavelength or the wavelength period of 10mm to 200nm.
The shape of the metal sub-wavelength unit of the metal sub-wavelength cell array layer in the shape of the metal sub-wavelength unit of described orlop metal sub-wavelength cell array layer and each the periodic unit layer is annular, side annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The geometric center spacing of the minor axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, the major axis of ellipse annular, ellipse annular, the length of line strip and composite figure is all between the 1/3-1/30 of the electromagnetic target wavelength of waiting to modulate target wavelength.
The projection overlapping area of metal sub-wavelength cell array on substrate material layer in the metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Metal sub-wavelength unit dislocation 0-1/2 metal sub-wavelength unit in the metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength unit rotation 0-180 degree in the metal sub-wavelength cell array layer in two adjacent periodic unit layers.
The spacing of the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in the spacing of the adjacent metal sub-wavelength unit in the described orlop metal sub-wavelength cell array layer and each periodic unit layer is zero to treating the modulated electromagnetic wave wavelength.
The preparation method of the electromagnetism modulated structure of multiple layer combination provided by the invention, its preparation process comprises:
1) on substrate material layer 1, applies photoresist or electronic corrosion-resistant, prepare the first module array of structures figure that material is photoresist or electronic corrosion-resistant by photoetching or direct electronic beam write method, this material is that the metal sub-wavelength cell array figure in the orlop metal sub-wavelength cell array layer in the electromagnetism modulated structure of first module array of structures figure and multiple layer combination of photoresist or electronic corrosion-resistant is consistent; And simultaneously near being the first module array of structures figure of photoresist or electronic corrosion-resistant, this material prepares at least three first pattern alignment marks;
2) material in step 1) is a plated metal on the first module array of structures figure of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares orlop metal sub-wavelength cell array layer 2 and at least three first pattern alignment marks of being covered on the substrate material layer;
3) utilize spin coating or membrane deposition method, in step 2) orlop metal sub-wavelength cell array layer 2 on apply or the electromagnetism modulated structure of deposition preparation multiple layer combination in the medium middle layer 3 of orlop periodic unit layer; Described medium middle layer is an insulation material layer, and its thickness is that 1nm is to 100mm;
4) apply photoresist or electronic corrosion-resistant on the medium middle layer 3 of step 3), by photoetching or direct electronic beam write method, preparation one deck material is the second cellular construction array pattern of photoresist or electronic corrosion-resistant on described medium middle layer 3; Perhaps preparation one deck material is the second cellular construction array pattern and at least three second graph alignment marks of photoresist or electronic corrosion-resistant on described medium middle layer; This material is that the metal sub-wavelength cell array figure in the orlop periodic unit layer in the electromagnetism modulated structure of the second cellular construction array pattern and multiple layer combination of photoresist or electronic corrosion-resistant is consistent;
5) material in step 4) is a plated metal on the second cellular construction array pattern of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares the metal sub-wavelength cell array layer on the medium middle layer that is covered in the orlop periodic unit layer; Perhaps prepare metal sub-wavelength cell array layer and at least three second graph alignment marks on the medium middle layer that is covered in the orlop periodic unit layer;
6) repeatedly repeat above-mentioned steps 3) to step 5), make the electromagnetism modulated structure of multiple layer combination.
The preparation method of the electromagnetism modulated structure of multiple layer combination provided by the invention, its step also comprises step 7); Described step 7) is on the metal sub-wavelength cell array layer in top layer periodic unit layer, to utilize spin coating or membrane deposition method to cover one deck dielectric passivation; Described dielectric passivation is an insulation material layer, and its thickness is that 1nm is to 100mm.
Material is that the second cellular construction array pattern of photoresist or electronic corrosion-resistant is aimed at up and down with the metal sub-wavelength cell array in the orlop metal sub-wavelength cell array layer 2;
Described being aligned to up and down adopted mask alignment or adopted coordinate to aim at;
Described mask alignment is as follows: utilize the optical microscope of exposure machine mask holder top, at first find the pattern alignment mark on the mask in microscopic fields of view; Then the material of gluing is moved on to the mask below, find the pattern alignment mark of material surface, regulate the position of material at last, by translation and rotation, make these two pattern alignment marks overlapping, reach accurately and aim at, seek other pattern alignment mark then, respectively the corresponding figure alignment mark of the figure on the material is aimed at it again; Complete when overlapping when the pattern alignment mark of pattern alignment mark on the specimen material and mask, realize that specimen material aims at the accurate of mask figure;
Described coordinate is aimed at as follows: utilize scanning electron microscope or optical microscope to find pattern alignment mark on the material in the visual field, note the coordinate of pattern alignment mark by system's scale, set up the relative coordinate system of material sample, the graphic structure that will need again accurately to aim at exposes in the relative coordinate position of correspondence, and the realization specimen material is aimed at the accurate of exposure figure.
Described substrate material layer is treated the modulation target wavelength for cleaning is smooth electromagnetic transmitance is not less than 50% material layer, and the described electromagnetic target wavelength of waiting to modulate target wavelength is any wavelength or the wavelength period of 10mm to 200nm.
The metal sub-wavelength cell configuration of the metal sub-wavelength cell array layer in the metal sub-wavelength cell configuration of described orlop metal sub-wavelength cell array layer and each the periodic unit layer is annular, side annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The geometric center spacing of the minor axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, the major axis of ellipse annular, ellipse annular, the length of line strip and composite figure is all between the 1/3-1/30 of the electromagnetic target wavelength of waiting to modulate target wavelength.
The projection overlapping area of metal sub-wavelength cell array on substrate material layer 1 in the metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Metal sub-wavelength unit dislocation 0-1/2 metal sub-wavelength unit in the metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength unit rotation 0-180 degree in the metal sub-wavelength cell array layer in two adjacent periodic unit layers.
The spacing of the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in the spacing of the adjacent metal sub-wavelength unit in the described orlop metal sub-wavelength cell array layer and each periodic unit layer is zero to treating the modulated electromagnetic wave wavelength.
The invention has the advantages that:
The present invention realizes a kind of electromagnetism modulated structure that comprises the sub-wavelength metal unit of multilayer by a kind of on same substrate, overcome the shortcoming of single second wavelength metallic structure electromagnetism modulation function dullness, can have specific electromagnetism modulation function by multilayer stratiform combined structure design neatly, as the special media material of functions such as frequency-selecting, filtering, anti-reflection, optically-active and special refraction.The modulated structure of this multilayer stratiform combination can be avoided the serious limited shortcoming of composite figure density in the planar graphics combine electromagnetism modulated structure, and, the heavy losses of the electromagnetic wave energy that modulated structure caused of second wavelength metallic structure combination on the multilayer stratiform textural association of realizing on the same substrate has also been avoided by a plurality of substrates; Simultaneously, the invention allows for a kind of interlayer metal structure that can realize and accurately aim at and prepare the preparation method of corresponding multilayer stratiform combination modulated structure, utilize the electromagnetism modulated structure of the sub-wavelength metal unit of the prepared multilayer multilayer of this preparation method can realize the electromagnetic coupled pattern of layer and interlayer, treat the electromagnetic modularity of modulating target wavelength but increased by the metal construction of accurately aiming at.
Description of drawings
The structural representation of the electromagnetism modulated structure of Fig. 1 multiple layer combination of the present invention;
Fig. 2 is the schematic flow sheet of the electromagnetism modulated structure of preparation multiple layer combination of the present invention; In Fig. 2: A to G represents to prepare the step of the electromagnetism modulated structure of multiple layer combination;
Among the A figure 1 is substrate material layer;
B figure expression utilizes photoetching and metal deposition-stripping means to realize orlop metal sub-wavelength cell array 2;
C figure expression is by the medium middle layer 3 in spin coating or the deposition process realization ground floor periodic unit layer;
D figure expression realizes the metal sub-wavelength cell array 4 in the ground floor periodic unit layer by accurately aiming at exposure and metal deposition-stripping means;
E figure expression realizes the medium middle layer 5 in the second layer periodic unit layer by spin coating or deposition process on the metal sub-wavelength cell array 4 in orlop periodic unit layer;
F schemes expression by repeating the step among C figure and the D figure, constantly sets up new medium middle layer and metal sub-wavelength cell array, at last the periodic unit layer of Xing Chenging; The suspension points of 6 indications is represented the step that dispenses; The metal sub-wavelength cell array layer of 7 expression the superiors periodic unit layers;
G figure is illustrated on the metal sub-wavelength cell array layer 7 of the superiors, utilizes methods such as deposition, spin coating or coating, encapsulation to realize dielectric passivation 8; G figure is the structural representation of the electromagnetism modulated structure of the final multiple layer combination of the present invention for preparing.
The electromagnetism modulated structure of the multilayer of Fig. 3 preparation of the present invention (bilayer) combination is to the THZ tera hertz electromagnetic modulated structure synoptic diagram of frequency range now.
Polarization situation 1 among Fig. 3: expression waits that the electromagnetic incident polarization electromagnetic wave of modulating target wavelength vertically passes the electromagnetism modulated structure of multiple layer combination of the present invention, and its electric field component is parallel to the opening edge of cellular construction in the metal openings resonant ring cell array;
A among Fig. 3, B, C, D figure has shown that respectively double-decker and single layer structure (not having the metal sub-wavelength cell array on middle layer and the middle layer) treat the contrast of modulated electromagnetic wave transmission spectrum modulation effect, wherein solid line is represented the electromagnetism transmission spectrum after double-decker is modulated, and black dotted lines is represented the single layer structure modulation effect; Wherein A figure and C figure expression are to the modulation with polarization situation 1 incident electromagnetic wave among Fig. 3, and B figure and D figure then represent the modulation with polarization situation 2 incident electromagnetic waves among Fig. 3; And the modulated structure that uses among A figure and the B figure among Fig. 3 is based upon on the quartz substrate, and among Fig. 3 C scheme and D figure in the modulated structure that uses be based upon on the silicon substrate.
Embodiment
Below in conjunction with embodiment and accompanying drawing electromagnetism modulated structure of multiple layer combination of the present invention and preparation method thereof is described in detail:
Embodiment 1
The electromagnetic wave of waiting to modulate target wavelength for different wave length, should select the substrate material layer, medium middle layer and the dielectric passivation that have the good transmission characteristic accordingly for use, as being the ultraviolet ray of 200nm-400nm, can select materials such as lead fluoride for use for target wavelength to be modulated; For target wavelength to be modulated is the visible light of 390nm-770nm, can select materials such as quartz, glass or pet polymer for use; For target wavelength to be modulated is the infrared ray of 750nm-1000um, can select materials such as iron-doped zinc selenide infrared transparent pottery or JGS3 infrared quartz glass for use; For target wavelength to be modulated is the THZ tera hertz electromagnetic wave now of 300um-1mm, can select materials such as silicon, polytetrafluoroethylplastic plastic or polyimide resin for use; For target wavelength to be modulated is the microwave of 2mm-1mm, can select materials such as acrylic plastering for use.Modulate near the visible light the wavelength 580nm in the present embodiment, therefore the material of substrate material layer of selecting 1 and medium middle layer 3, dielectric passivation 8 is near the silicon dioxide of the visible transmission the wavelength 580nm more than 90%, realizes multiple layer combination electromagnetism modulated structure by step shown in Figure 2:
1) on silicon dioxide substrates material layer 1, applies electronic corrosion-resistant PMMA, prepare the first module array of structures figure that material is PMMA by the direct electronic beam write method, the array element structure is that 2 diameters are 90nm in this figure, spacing is the round dot of 60nm, its distance of center circle 150nm, period pitch is 400nm; Array area is 100 microns * 100 microns; Simultaneously near being the first module array of structures figure of PMMA, this material prepares the cruciform pattern alignment mark that at least three materials are PMMA;
2) the thick argent of deposition 90nm on the prepared first module array of structures figure in step 1), and the PMMA solution-off peeled off, prepare the orlop argent sub-wavelength cell array layer 2 that is covered on the silicon dioxide substrates material layer 1 and three materials the cruciform first pattern alignment marks for silver; The cell array figure of this orlop argent sub-wavelength cell array layer 2 is identical with first module array of structures figure in the step 1);
3) utilize the magnetron sputtering deposition method, in step 2) orlop argent sub-wavelength cell array layer 2 on the silica dioxide medium middle layer 3 of deposition preparation orlop periodic unit layer, its thickness is 100nm;
4) PMMA in spin coating on the silica dioxide medium middle layer 3 of step 3), utilize the scanning electron microscope in the direct electronic beam one-writing system, observe step 2) in the first prepared pattern alignment mark position, behind its relative position record, set up new coordinate system, mark the lower left corner coordinate of orlop argent sub-wavelength cell array layer 2 prepared in the step 3), and from this coordinate position, expose to the upper right corner from the lower left corner, develop, by the direct electronic beam write method, preparation one deck material is the second cellular construction array pattern of PMMA on described medium middle layer 3, identical in this figure with first module array of structures figure, the center of the circle center line connecting of 2 round dots in the cellular construction is aimed at fully, but 2 round dots in the adjacent cellular construction are that turning axle is rotated counterclockwise 60 degree with the center of circle center line connecting all; Simultaneously, near being the second cellular construction array pattern of PMMA, this material prepares the cruciform pattern alignment mark that at least three materials are PMMA;
5) material in step 4) is a plated metal silver on the second cellular construction array pattern of PMMA, and the PMMA solution-off peeled off, prepare argent sub-wavelength cell array layer 4 on the medium middle layer that is covered in orlop periodic unit layer and three matter materials cruciform second graph alignment marks for silver;
6) continue to repeat above-mentioned steps 3) to step 5) five times, make the electromagnetism modulated structure of six layers of combination;
7) utilize the magnetron sputtering deposition method, on the argent sub-wavelength cell array layer 7 in the top layer periodic unit layer of the electromagnetism modulated structure of six layers of prepared combination of step 6), utilize the ion sputtering deposition method to prepare silica dioxide medium overlayer 8, its thickness is 80nm.
Near above-mentioned all visible lights of each argent sub-wavelength cell array corresponding wavelength 580nm all have different electromagnetism frequency-selective filtering effects under the incident of different polarization direction, but because there is rotation in the right position of metal round dot between every adjacent two layers metal sub-wavelength cell array, therefore the polarization dependence of the electromagnetic response of multiple layer combination material reduces greatly owing to the symmetry characteristic of structure, electromagnetic wave to this wavelength can produce corresponding modulation in different polarization angle incident, has formed the multiple layer combination electromagnetism modulated structure with new complex modulated effect.
On silicon substrate, prepare bilayer and make up THZ tera hertz electromagnetic wave modulated structure now, may further comprise the steps with double-deck antisymmetry split ring resonator metal construction array:
1) goes up spin coating one deck ultraviolet photoresist S1813 at the silicon substrate (A figure among Fig. 2) of 800 micron thickness, by the uv-exposure system mask with split ring resonator array pattern and four block graphics alignment marks is exposed, developed, split ring resonator array and pattern alignment mark are transferred on the photoresist, wherein the size dimension of split ring resonator unit is 45 microns, 60 microns of Cycle Lengths, array size are 8 millimeters * 8 millimeters;
2) utilize thick crome metal and the thick metallic gold of 100nm of deposition one deck 5nm on the silicon substrate of thermal evaporation depositing system after step 1) is handled as transition bed, place this sample into that acetone dissolves photoresist again, the cell array structure of metal and pattern alignment are marked on the silicon substrate realize (the B figure among Fig. 2);
3) in step 2) the polyimide resin material of spin coating one deck 2 micron thickness was placed into it in 130 ℃ of baking ovens baking one hour again as middle dielectric layer on the silicon substrate after handling, made polyimide stable (the C figure among Fig. 2);
4) spin coating one deck ultraviolet photoresist S1813 again on the sample after step 3) is handled by the microscope of uv-exposure system, at first finds the pattern alignment mark on the mask in the visual field; This mask have with step 1 in mask on feature size, split ring resonator array that shape is all identical, but the direction of split ring is opposite; Again glue-coated sample is moved on to the mask below subsequently, find the pattern alignment mark of the minimum of material surface, regulate the position of material, by translation and rotation, make that these two pattern alignment marks are overlapping to be aimed to reach accurately, seek other pattern alignment mark then, respectively the pattern alignment mark on the material is aimed at it again, when all the pattern alignment marks on the specimen material all with mask on the graph of a correspondence alignment mark complete when overlapping, promptly realized accurate aligning; Expose at last, develop, make on split ring resonator array and the alignment mark figure transfer photoresist to the polyimide layer, wherein split ring resonator array element size and Cycle Length, array size are all identical with split ring resonator array in the step 1), but opening direction is opposite;
5), utilize the thermal evaporation depositing system on above-mentioned substrate, to deposit one deck 5nm thick crome metal and the thick metallic gold of 100nm on the sample after step 4) is handled as transition bed, place this sample into that acetone dissolves photoresist again, the cell array structure of second layer metal is realized (as the figure of the D among Fig. 2) on the polyimide middle layer; Thereby realized a kind of electromagnetism modulated structure of multilayer (bilayer) combination that on silicon substrate, prepares with double-deck antisymmetry split ring resonator metal construction array; The electromagnetism modulated structure of this bilayer combination the THZ tera hertz of 200-600 micron wave length now frequency range have specific filtering and frequency-selecting function.
For near 2 microns of the wavelength with 1.5 microns near electromagnetic wave carry out the artificial electromagnetic modulated structure of the multiple layer combination of compound absorption modulation simultaneously, performing step is as follows:
1) selects for use the transparent ito glass substrate of near-infrared electromagnetic ripple; Spin coating last layer electronic corrosion-resistant PMMA on the ITO substrate, utilize e-beam direct-writing exposure, development, at first on PMMA, form one by element length 300nm, the U-shaped structural unit of live width 60nm is formed, Cycle Length 500nm, area is 0.8 millimeter * 0.8 millimeter a square first module array of structures figure, and forms four criss-cross pattern alignment marks simultaneously near four angles of its array respectively;
2) utilize the surface of the thick argent of electron-beam evaporation 50nm prepared sample in the step 1), again sample is immersed in the acetone soln with the photoresist dissolving and with the metal-stripping above the photoresist, the argent that deposits in the former photoresist graph position then remains, so the array of structures of first module described in step 1) figure becomes the argent structure by the photoresist figure transfer, i.e. orlop metal sub-wavelength cellular construction array; Simultaneously, four first pattern alignment marks also shift the first pattern alignment mark that becomes the argent material.
3) in step 2) in prepared sample surfaces utilize the thick MgF of plasma sputtering method deposition one deck 50nm
2Film, i.e. medium middle layer in the orlop periodic unit layer;
4) prepared sample surfaces spin coating one deck PMMA glue in step 3), and enter the electron-beam direct writing system, at first utilize scanning electronic microscope observation to arrive step 2) in the first prepared pattern alignment mark position, behind its relative position record, set up new coordinate system, mark step 2) in the lower left corner coordinate of U-shaped array structure, and from this coordinate position, expose to the upper right corner from the lower left corner, develop, on PMMA glue, realize one by element length 200nm, the U-shaped structural unit of live width 50nm is formed, Cycle Length 500nm, area is the square sub-wavelength structure array pattern of 0.8mm * 0.8mm, and its U-shaped cellular construction opening direction is identical with U-shaped cellular construction opening direction in the orlop metal sub-wavelength cellular construction array;
5) by with step 2) identical method, the figure transfer on the PMMA glue is become the argent structure, realize being covered in the argent sub-wavelength cellular construction array on the medium middle layer;
6) by repeating step 4) and 5), realize second, third periodic unit layer successively, its medium middle layer is the thick MgF of 50nm
2Argent sub-wavelength cellular construction array in the second round elementary layer is identical with the parameter of orlop metal sub-wavelength cellular construction array, and cellular construction serves as that axle is rotated counterclockwise 90 degree with the U-shaped structure centre; Argent sub-wavelength cellular construction array in the period 3 elementary layer is identical with the parameter of metal sub-wavelength cellular construction array in the orlop periodic unit layer, and cellular construction serves as that axle is rotated counterclockwise 90 degree with the U-shaped structure centre;
7) at the prepared sample surfaces of step 6), be that argent sub-wavelength cellular construction array in the period 3 elementary layer covers the thick HSQ glue of one deck 80nm, and utilize 135 ℃ baking oven baking to make it firm in 1 hour, become dielectric passivation, just finish the artificial electromagnetic modulated structure of the multiple layer combination of present embodiment this moment.
The bilayer that utilizes SU-8 glue to be realized as the medium middle layer respectively on quartz substrate and silicon substrate makes up THZ tera hertz electromagnetic wave modulated structure now, its preparation process is similar to the preparation method among the embodiment 2, difference is: the dimension of picture of 1) selecting for use is: 38 microns of split ring resonator element lengths, 55 microns of Cycle Lengths; 2) medium middle layer and dielectric passivation adopt SU-8 glue, and spin coating thickness is 30 microns; 3) the resonant ring opening direction is identical between levels; The THZ tera hertz of electromagnetism modulated structure under different polarization incident situation of this multilayer (bilayer) combination now frequency range (750 microns to 150 microns of wavelength) transmission spectrum and corresponding monolayer material contrast as shown in Figure 3:
For quartz substrate, under two kinds of different polarization incident situations, the absorption peak position in its single, double layer transmission spectrum does not significantly change (as figure of the A among Fig. 3 and B figure); And the double-decker of silicon substrate and single layer structure have produced bigger variation (as figure of the C among Fig. 3 and D figure) in that two kinds of polarization situations are next: when the incident electric field component is parallel to metal openings resonant ring unit opening edge (C among Fig. 3 schemes), comprised not only in the double-deck transmission spectrum on the silicon substrate that single layer structure is at 0.4THz, 1.2THz the electromagnetic response absorption peak, near 0.6THz and 1.8THz, absorption peak has also appearred; And electric field component the electroresponse peak identical with individual layer occur at 0.9THz in the double-decker transmission spectrum during perpendicular to the becket opening edge (the D figure among Fig. 3), and the frequency range more than 0.9THz almost completely is absorbed; This is that corresponding change can take place therefore corresponding modulated electromagnetic wave response frequency because substrate and filler have changed the THZ tera hertz dielectric environment of sub-wavelength metal resonant element now; Because SU8 glue has and quartzy close specific inductive capacity, therefore, for the double-decker on the quartz substrate, its upper/lower layer metallic sub-wavelength unit is in similar dielectric environment, have close electromagnetic response frequency, so obvious variation does not take place in its single double-deck electromagnetic response.And for the double-decker on the silicon substrate, its upper/lower layer metallic sub-wavelength unit is in the diverse dielectric environment, its double-deck transmission spectrum, be equivalent to the stack of two kinds of different responses, thereby produced violent variation-almost be equivalent to the stack of quartz substrate and silicon substrate single-layer metal sub-wavelength structure electromagnetic response, thereby set up a kind of multilayer dimension THZ tera hertz that utilizes dielectric environment between different layers and realize electromagnetic wave (750 microns-150 microns) transmission spectrum modulated structure now.
Claims (13)
1. the artificial electromagnetic modulated structure of a multiple layer combination, it comprises:
Substrate material layer;
Cover the orlop metal sub-wavelength cell array layer on this substrate material layer;
Stack is covered in the periodic unit of one deck at least layer on the described orlop metal sub-wavelength cell array layer successively;
Each layer periodic unit layer is formed by a medium middle layer and the metal sub-wavelength cell array layer that is covered on this medium middle layer; Described medium middle layer is an insulation material layer, and its thickness is that 1nm is to 100mm.
2. by the artificial electromagnetic modulated structure of the described multiple layer combination of claim 1, it is characterized in that, also comprise: be covered in the dielectric passivation on the metal sub-wavelength array layer of the superiors' periodic unit layer; Described dielectric passivation is an insulation material layer, and its thickness is that 1nm is to 100mm.
3. press the artificial electromagnetic modulated structure of the described multiple layer combination of claim 1, it is characterized in that, described substrate material layer is treated the modulation target wavelength for cleaning is smooth electromagnetic transmitance is not less than 50% material layer, and the described electromagnetic target wavelength of waiting to modulate target wavelength is any wavelength or the wavelength period of 10mm to 200nm.
4. press the artificial electromagnetic modulated structure of the described multiple layer combination of claim 1, it is characterized in that, the shape of the metal sub-wavelength unit of the metal sub-wavelength cell array layer in the shape of the metal sub-wavelength unit of described orlop metal sub-wavelength cell array layer and each the periodic unit layer is annular, side annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The geometric center spacing of the minor axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, the major axis of ellipse annular, ellipse annular, the length of line strip and composite figure is all between the 1/3-1/30 of the electromagnetic target wavelength of waiting to modulate target wavelength.
5. press the artificial electromagnetic modulated structure of the described multiple layer combination of claim 1, it is characterized in that the projection overlapping area of metal sub-wavelength cell array on substrate material layer in the metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Metal sub-wavelength unit dislocation 0-1/2 metal sub-wavelength unit in the metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength unit rotation 0-180 degree in the metal sub-wavelength cell array layer in two adjacent periodic unit layers.
6. press the artificial electromagnetic modulated structure of the described multiple layer combination of claim 1, it is characterized in that the spacing of the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in the spacing of the adjacent metal sub-wavelength unit in the described orlop metal sub-wavelength cell array layer and each periodic unit layer is zero to treating the modulated electromagnetic wave wavelength.
7. the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 1, its preparation process comprises:
1) on substrate material layer 1, applies photoresist or electronic corrosion-resistant, prepare the first module array of structures figure that material is photoresist or electronic corrosion-resistant by photoetching or direct electronic beam write method, this material is that the metal sub-wavelength cell array figure in the orlop metal sub-wavelength cell array layer in the electromagnetism modulated structure of first module array of structures figure and multiple layer combination of photoresist or electronic corrosion-resistant is consistent; And simultaneously near being the first module array of structures figure of photoresist or electronic corrosion-resistant, this material prepares at least three first pattern alignment marks;
2) material in step 1) is a plated metal on the first module array of structures figure of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares orlop metal sub-wavelength cell array layer 2 and at least three first pattern alignment marks of being covered on the substrate material layer;
3) utilize spin coating or membrane deposition method, in step 2) orlop metal sub-wavelength cell array layer 2 on apply or the electromagnetism modulated structure of deposition preparation multiple layer combination in the medium middle layer 3 of orlop periodic unit layer; Described medium middle layer is an insulation material layer, and its thickness is that 1nm is to 100mm;
4) apply photoresist or electronic corrosion-resistant on the medium middle layer 3 of step 3), by photoetching or direct electronic beam write method, preparation one deck material is the second cellular construction array pattern of photoresist or electronic corrosion-resistant on described medium middle layer 3; Perhaps preparation one deck material is the second cellular construction array pattern and at least three second graph alignment marks of photoresist or electronic corrosion-resistant on described medium middle layer; This material is that the metal sub-wavelength cell array figure in the orlop periodic unit layer in the electromagnetism modulated structure of the second cellular construction array pattern and multiple layer combination of photoresist or electronic corrosion-resistant is consistent;
5) material in step 4) is a plated metal on the second cellular construction array pattern of photoresist or electronic corrosion-resistant, and solution-off peels off described photoresist or electronic corrosion-resistant, prepares the metal sub-wavelength cell array layer on the medium middle layer that is covered in the orlop periodic unit layer; Perhaps prepare metal sub-wavelength cell array layer and at least three second graph alignment marks on the medium middle layer that is covered in the orlop periodic unit layer;
6) repeatedly repeat above-mentioned steps 3) to step 5), make the electromagnetism modulated structure of multiple layer combination.
8. press the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 7, its step also comprises step 7); Described step 7) is on the metal sub-wavelength cell array layer in top layer periodic unit layer, to utilize spin coating or membrane deposition method to cover one deck dielectric passivation; Described dielectric passivation is an insulation material layer, and its thickness is that 1nm is to 100mm.
9. press the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 7, it is characterized in that material is that the second cellular construction array pattern of photoresist or electronic corrosion-resistant is aimed at up and down with the metal sub-wavelength cell array in the orlop metal sub-wavelength cell array layer 2;
Described being aligned to up and down adopted mask alignment or adopted coordinate to aim at;
Described mask alignment is as follows: utilize the optical microscope of exposure machine mask holder top, at first find the pattern alignment mark on the mask in microscopic fields of view; Then the material of gluing is moved on to the mask below, find the pattern alignment mark of material surface, regulate the position of material at last, by translation and rotation, make these two pattern alignment marks overlapping, reach accurately and aim at, seek other pattern alignment mark then, respectively the corresponding figure alignment mark of the figure on the material is aimed at it again; Complete when overlapping when the pattern alignment mark of pattern alignment mark on the specimen material and mask, realize that specimen material aims at the accurate of mask figure;
Described coordinate is aimed at as follows: utilize scanning electron microscope or optical microscope to find pattern alignment mark on the material in the visual field, note the coordinate of pattern alignment mark by system's scale, set up the relative coordinate system of material sample, the graphic structure that will need again accurately to aim at exposes in the relative coordinate position of correspondence, and the realization specimen material is aimed at the accurate of exposure figure.
10. press the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 7, it is characterized in that, described substrate material layer is treated the modulation target wavelength for cleaning is smooth electromagnetic transmitance is not less than 50% material layer, and the described electromagnetic target wavelength of waiting to modulate target wavelength is any wavelength or the wavelength period of 10mm to 200nm.
11. press the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 7, it is characterized in that, the metal sub-wavelength cell configuration of the metal sub-wavelength cell array layer in the metal sub-wavelength cell configuration of described orlop metal sub-wavelength cell array layer and each the periodic unit layer is annular, side annular, oval ring, line strip, open annular, U-shaped, the combination in any of circular, square, oval or above-mentioned shape;
The geometric center spacing of the minor axis of the diameter of described annular, circular diameter, the length of side of side's annular, the square length of side, oval-shaped major axis, oval-shaped minor axis, the major axis of ellipse annular, ellipse annular, the length of line strip and composite figure is all between the 1/3-1/30 of the electromagnetic target wavelength of waiting to modulate target wavelength.
12. press the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 7, it is characterized in that the projection overlapping area of metal sub-wavelength cell array on substrate material layer 1 in the metal sub-wavelength cell array layer in two adjacent periodic unit layers is 70%-100%; Perhaps
Metal sub-wavelength unit dislocation 0-1/2 metal sub-wavelength unit in the metal sub-wavelength cell array layer in two adjacent periodic unit layers; Perhaps
Metal sub-wavelength unit rotation 0-180 degree in the metal sub-wavelength cell array layer in two adjacent periodic unit layers.
13. press the preparation method of the electromagnetism modulated structure of the described multiple layer combination of claim 7, it is characterized in that the spacing of the adjacent metal sub-wavelength unit in the metal sub-wavelength cell array layer in the spacing of the adjacent metal sub-wavelength unit in the described orlop metal sub-wavelength cell array layer and each periodic unit layer is zero to treating the modulated electromagnetic wave wavelength.
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