WO2019095604A1

WO2019095604A1 - Steep pulse electric field tumor treatment device

Info

Publication number: WO2019095604A1
Application number: PCT/CN2018/080651
Authority: WO
Inventors: 周丁华; 王国经; 孔显娟
Original assignee: 中国人民解放军火箭军总医院
Priority date: 2017-11-16
Filing date: 2018-03-27
Publication date: 2019-05-23
Also published as: CN107714171A

Abstract

A steep pulse electric field tumor treatment device. The steep pulse electric field tumor treatment device comprises a housing and a pulse generation circuit installed in the housing. The pulse generation circuit comprises: a control module (1) for outputting a control signal; an input module (2), connected to the control module (1), for matching the control signal; a drive module (3), connected to the input module (2), for outputting a drive voltage signal; a DC high voltage power supply module (4) for outputting DC high voltage power; and a pulse forming module (5), having a signal input end connected to the drive module (3) and a power input end connected to the DC high voltage power, for outputting a high frequency pulse current after receiving the drive voltage signal. The steep pulse electric field tumor treatment device of the present invention output of highly stable pulse currents.

Description

Steep pulse electric field tumor treatment device

Technical field

The invention relates to the technical field of medical instruments, in particular to a steep pulse electric field tumor treatment device.

Background technique

In recent years, the phenomenon of cell electroporation (EP) caused by pulsed electric field has gradually attracted the attention of researchers in the field of biomedicine, and it has been applied to the treatment of cancer. Electrochemotherapy (ECT) and irreversible electroporation therapy have been proposed. It was found that after the electroporation effect, the irreversible electrical breakdown of the cell membrane will occur as the pulse intensity increases and the pulse action time increases, causing the cell membrane to rupture until the cell dies. Using this feature, the researchers proposed irreversible electroporation as a new non-thermal effect tumor ablation method. Irreversible electroporation alone uses electrical pulses with pulse widths of μs to ms and field strengths of kv/cm. Acting on cancer tissue, causing irreversible electrical breakdown of cancer cells, thus destroying the living conditions of cancer cells and achieving the purpose of killing cancer cells. Irreversible electroporation ablation is a minimally invasive ablation technique. The therapeutic mechanism is to emit a certain frequency of direct current through a high-voltage pulse generator, so that electrons in the tissue around the electrode needle are excited to directly penetrate the tumor tissue cells.

Summary of the invention

It is an object of the present invention to provide a steep pulse electric field tumor treatment apparatus for solving the problem of poor stability of the conventional steep pulse electric field tumor treatment apparatus.

To achieve the above object, the present invention provides a steep pulse electric field tumor treatment apparatus comprising a housing and a pulse generation circuit mounted in the housing, the pulse generation circuit comprising:

a control module for outputting a control signal;

An input module coupled to the control module for matching the control signal;

a driving module connected to the input module for outputting a driving voltage signal;

a DC high voltage power supply module for outputting a DC high voltage power supply;

The signal input end is connected to the driving module, and the power input end is connected to the DC high voltage power supply, and is used for outputting a pulse forming module of a high frequency pulse current after receiving the driving voltage signal.

Preferably, the input module includes a first resistor R1, a second resistor R2, and a third resistor R3. One end of the second resistor R2 is coupled to one end of the first resistor R1 to a signal input end of the input module. The other end of the first resistor R1 and one end of the third resistor R3 are connected to the signal output end of the input module, and the other end of the third resistor R3 is commonly grounded with the signal input end of the input module. .

Preferably, the pulse forming module includes a MOSFET tube Q1, a fourth resistor R4, a fifth resistor R5, and a first capacitor C1, and one end of the fourth resistor R4 is connected to an output end of the DC high voltage power module. The other end of the fourth resistor R4 and the drain of the MOSFET Q1 are connected to one end of the first capacitor C1, and the other end of the first capacitor C1 and the end of the fifth resistor R5 are connected to the pulse. Forming an output of the module, the other end of the fifth resistor R5 is commonly connected to the source of the MOSFET Q1, and the gate of the MOSFET Q1 is a signal input end of the pulse forming module.

Preferably, the MOSFET tube Q1 has a withstand voltage of 2500V, and the drain current ID of the MOSFET Q1 has a maximum value of 5A.

Preferably, the DC high voltage power supply module is of the PS350.

Preferably, the capacitance of the first capacitor C1 is 1-10 μF.

Preferably, the control module is a single chip microcomputer.

The present invention has the advantage that the steep pulse electric field tumor treatment apparatus of the present invention has the advantage of high stability of the output pulse current.

DRAWINGS

1 is a block diagram showing the structure of a pulse generating circuit of a steep pulse electric field tumor treatment apparatus according to the present invention.

2 is a detailed circuit diagram of an input module of the present invention.

3 is a detailed circuit diagram of a pulse forming module of the present invention.

Detailed ways

The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.

As shown in FIG. 1, the steep pulse electric field tumor treatment device comprises a housing and a pulse generation circuit installed in the housing, and the pulse generation circuit comprises: a control module 1, an input module 2, a drive module 3, a DC high voltage power supply module 4, and a pulse formation. Module 5.

The control module 1 acts here as a signal generator for outputting control signals, and the control module 1 is a single chip microcomputer in this embodiment.

As shown in FIG. 2, the input module 2 is connected to the control module 1, and the input module 2 is used to match the impedance of the control signal. The input module 2 includes a first resistor R1, a second resistor R2 and a third resistor R3, and a second resistor R2. One end of the first resistor R1 is connected to the signal input end of the input module 2, and the other end of the first resistor R1 and the third resistor R3 are connected to the signal output end of the input module 2, and the other end of the third resistor R3 Co-grounded with the signal input of input module 2. The π-shaped resistor network composed of the first resistor R1, the second resistor R2 and the third resistor R3 mainly implements two functions, one for adjusting the trigger domain and the other for matching the impedance of the control signal, because most of the inputs The characteristic impedance of the control signal is less than 50Ω, and the π-shaped resistor network can be well matched to its implementation.

The driving module 3 is connected to the input module 2. Since the control signal is often a voltage signal lower than about 3V, the pulse forming module 5 cannot be directly controlled. Therefore, the input module 2 sends a control signal to the driving module 3, and the driving module 3 receives the signal. After the control signal is output, the driving voltage signal is output, and the driving pulse forming module 5 is operated, and the driving module 3 is also the key to improve the switching speed of the MOSFET Q1 and the steepness of the output pulse front.

The DC high voltage power supply module 4 is used for outputting a DC high voltage power supply. In this embodiment, the DC high voltage power supply module 4 is selected as a PS350 DC high voltage power supply, and the PS350 DC high voltage power supply is a high precision high voltage power supply, which has a very low ripple noise. And with very high stability and accuracy, its voltage regulation rate can reach 0.001%, the accuracy rate can reach 0.05%, PS350 can output 5KV DC voltage, which fully meets the requirements of medical cancer treatment for high voltage pulse wave peak.

As shown in FIG. 3, the signal input end of the pulse forming module 5 is connected to the driving module 3. The power input end of the pulse forming module 5 is connected to the DC high voltage power supply module 4, and the pulse forming module 5 outputs a high frequency after receiving the driving voltage signal. Pulse current. The pulse forming module 5 includes a MOSFET tube Q1, a fourth resistor R4, a fifth resistor R5 and a first capacitor C1. One end of the fourth resistor R4 is connected to the output end of the DC high voltage power supply module 4, and the other end of the fourth resistor R4 is connected to the MOSFET. The drain of the transistor Q1 is connected to one end of the first capacitor C1. The other end of the first capacitor C1 and the end of the fifth resistor R5 are connected to the output end of the pulse forming module 5. The other end of the fifth resistor R5 is connected to the MOSFET Q1. The source is commonly grounded, and the gate of the MOSFET Q1 is the signal input terminal of the pulse forming module 5. The capacitance of the first capacitor C1 is 1-10 μF, the withstand voltage of the MOSFET Q1 is 2500 V, and the maximum drain ID of the MOSFET Q1 is 5 A. MOSFETs have faster switching speeds than IGBTs and are commonly used to make high-speed switches. These power electronics have high-speed switching capability, low trigger energy, high repetition rate, adjustable pulse width, long life, and high reliability. In addition, MOSFET Q1 also has high pressure resistance and high stability. When the gate input of the MOSFET Q1 is low, the MOSFET Q1 is turned off, and the DC high voltage power supply module 4 charges the first capacitor C1. After the charging is completed, the voltage of one end of the first capacitor C1 is HV, and the voltage value of the other end is 0; When the gate input of the MOSFET Q1 is at a high level, the MOSFET Q1 is turned on, and C1 is discharged by discharging back to 1. Therefore, by repeatedly controlling the on and off of the MOSFET tube Q1, the output terminal of the pulse forming module 5 can output a high frequency pulse current that satisfies the requirements.

Although the present invention has been described in detail with reference to the preferred embodiments of the present invention, it will be apparent to those skilled in the art. Therefore, such modifications or improvements made without departing from the spirit of the invention are intended to be within the scope of the invention.

Claims

A steep pulse electric field tumor treatment apparatus comprising a housing and a pulse generation circuit mounted in the housing, wherein the pulse generation circuit comprises:

a control module for outputting a control signal;

An input module coupled to the control module for matching the control signal;

a driving module connected to the input module for outputting a driving voltage signal;

a DC high voltage power supply module for outputting a DC high voltage power supply;

The signal input end is connected to the driving module, and the power input end is connected to the DC high voltage power supply, and is used for outputting a pulse forming module of a high frequency pulse current after receiving the driving voltage signal.
The steep pulse electric field tumor treatment apparatus according to claim 1, wherein the input module comprises a first resistor R1, a second resistor R2 and a third resistor R3, and one end of the second resistor R2 is opposite to the first One end of the resistor R1 is connected to the signal input end of the input module, and the other end of the first resistor R1 and one end of the third resistor R3 are connected to the signal output end of the input module, the third resistor The other end of R3 is commonly grounded to the signal input of the input module.
The steep pulse electric field tumor treatment apparatus according to claim 1, wherein the pulse forming module comprises a MOSFET tube Q1, a fourth resistor R4, a fifth resistor R5, and a first capacitor C1, wherein the fourth resistor R4 One end is connected to the output end of the DC high voltage power supply module, and the other end of the fourth resistor R4 is connected to the drain of the MOSFET Q1 to one end of the first capacitor C1, and the other end of the first capacitor C1 One end of the fifth resistor R5 is connected to the output end of the pulse forming module, and the other end of the fifth resistor R5 is commonly connected to the source of the MOSFET Q1. The gate of the MOSFET Q1 is The pulse forms a signal input of the module.
The steep pulse electric field tumor treatment apparatus according to claim 3, wherein the MOSFET tube Q1 has a withstand voltage of 2500 V, and the MOSFET tube Q1 has a drain current ID of 5 A maximum.
The steep pulse electric field tumor treatment apparatus according to claim 1, wherein the DC high voltage power supply module is of a type PS350.
The steep pulse electric field tumor treatment apparatus according to claim 5, wherein the capacitance of the first capacitor C1 is 1-10 μF.
The steep pulse electric field tumor treatment apparatus according to claim 1, wherein the control module is a single chip microcomputer.