WO2016155762A1 - Method and system of carrier-based modulation for multilevel single stage buck-boost inverters - Google Patents

Method and system of carrier-based modulation for multilevel single stage buck-boost inverters Download PDF

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Publication number
WO2016155762A1
WO2016155762A1 PCT/EP2015/056787 EP2015056787W WO2016155762A1 WO 2016155762 A1 WO2016155762 A1 WO 2016155762A1 EP 2015056787 W EP2015056787 W EP 2015056787W WO 2016155762 A1 WO2016155762 A1 WO 2016155762A1
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Prior art keywords
carrier
shoot
inverter
level
states
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PCT/EP2015/056787
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French (fr)
Inventor
Oleksandr HUSEV
Dmitri VINNIKOV
Enrique ROMERO-CADAVAL
Carlos RONCERO-CLEMENTE
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Tallinn University Of Technology
University Of Extremadura
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Priority to PCT/EP2015/056787 priority Critical patent/WO2016155762A1/en
Publication of WO2016155762A1 publication Critical patent/WO2016155762A1/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels

Definitions

  • This invention belongs to the field of power electronics and semiconductor converter control and pertains to the modulation technics of multilevel inverters with impedance network where uniformly distributed shoot-through states are required.
  • PWM Pulse ⁇ Width-Modulation
  • FPGA Field Programmable Gate Array
  • CPLD Complex Programmable Logic Device
  • example shows the sketch of the modulation technique that can be applied only for 3-level topology, but can not be generalised to any N-level solution.
  • shoot-through states are implemented by help of the same carrier signal that is used for main switching signal generation. It means that the shoot-through switching frequency is the same as main switching frequency, as a result bigger passive components of the impedance network are required.
  • the goal of the present invention is to cover control solutions for any level single stage buck-boost inverter topologies based on carrier based modulation techniques and to develop modulation technique with double switching frequency shoot-through generation.
  • the goal of the present invention is achieved by the N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters, by means of adding special shoot-through carrier signal along with simultaneous shifting upper and lower carrier signals.
  • the present invention is different by special shoot-through carrier signal with double frequency, that is absent in previous solutions, fully symmetrical transistors switching and presence of additional shifting of carries signals.
  • the present invention can be applied in the control system for any N-level inverter topology or multilevel cascaded (modular converters) topology. At the same time, it has double switching frequency of the shoot-through states distribution that allows reducing passive components of the impedance networks.
  • the present invention is different from prior art by carrier signal Sst ( ⁇ [0,1]), which has double frequency; carriers upper and lower are displaced D s /2 respectively for 3-level application, in case of N-level application the displacement is defined in the Table 1; and the invention can be applied in the control system for any N-level inverter topology or multilevel cascaded (modular converters) topology, wherein at the same time, it has double switching frequency of the shoot-through states distribution that allows reducing passive components of the impedance networks.
  • FIG 1 describes three phase three-level impedance source grid connected inverter – this is a target of control where invention can be used;
  • FIG 2 describes N-level modular inverter – this another possible target of control where invention can be used;
  • FIG 3 describes proposed new N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters in particular for 3 phase 3-level impedance inverter. It illustrates proposed technique for a 3-level inverter as a special case of any multilevel inverter or modular structure;
  • FIG 4 describes the sketch of the implementation of the proposed technique for 3 ⁇ level application
  • FIG 5 describes the N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters for any N-level inverter or N-modular inverter with impedance sources.
  • FIG 1-3 contain the following symbols:
  • FIG 1 depicts preferred embodiment of the system according to present invention, that comprises input voltage source 1, impedance network 2 (for example Z ⁇ source network, quasi-Z-source network, trans-Z-source network, Y ⁇ source network), inverter 3 (preferably N-level neutral point clamped inverter), output filter 4 comprising grid or any AC load.
  • impedance network 2 for example Z ⁇ source network, quasi-Z-source network, trans-Z-source network, Y ⁇ source network
  • inverter 3 preferably N-level neutral point clamped inverter
  • output filter 4 comprising grid or any AC load.
  • Such topology due to impedance network has shoot-through immunity.
  • the system according to present invention comprises modular (cascaded) structure with 2-level H-bridge inverters as shown in the FIG 2, wherein the system comprises at least one input voltage source 1, at least one impedance network 2 (for example Z-source network, quasi-Z-source network, trans-Z-source network, Y-source network), at least one inverter 3 (preferably 2 ⁇ level H-bridge inverter) and output filter 4 comprising single phase grid, motor, or any AC load.
  • each inverter has own impedance network.
  • N-level inverter for example 3-level, 5-level, 7-level
  • modular inverter for example H-bridge 3-level modular inverter
  • FIG 3 and FIG 4 illustrate the method according to present invention of N-level carrier-based modulation with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters as a particular case for 3-level 3-phase impedance source inverter with a frequency modulation index ( m f ) equal to 4.
  • FIG 3 illustrates the present method according to preferred embodiment comprising three modulating waves (preferably one wave per phase) and two triangular carriers (C1 upper ⁇ [0,1] and C2 lower ⁇ [-1,0]) are compared in order to obtain the different normal states of T1 , T2 , T5 , T6 , T9 and T10 and T3 , T4 , T7 , T8 , T11 and T12 have the complementary state of the other, respectively.
  • three modulating waves preferably one wave per phase
  • two triangular carriers C1 upper ⁇ [0,1] and C2 lower ⁇ [-1,0]
  • N ⁇ level carrier-based modulation technique with uniformly distributed shoot ⁇ through states for multilevel single stage buck-boost inverters characterised in that additional carrier signals shifting provides sinusoidal output voltage waveform with maximum half cycle average value.
  • FIG 4 depicts the implementation sketch of the present invention. It shows the logic circuit diagram that must be realized in the FPGA or CPLD in order to implement proposed control strategy.
  • FIG 5 shows new N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters as a particular case for 5-level topology.
  • FIG 3 and FIG 5 show how to increase the number of level of the proposed control strategy and extend to any N-level topology. It can be done by means of adding carrier signals. Adding upper and lower carries leads to incremental by 2 number of level of the topology.
  • Table 1 illustrates the definition of the carrier signals shifting for any N-level topology.
  • Table 1 3-Level 5-Level N-Level Carrier N-2 X X Ds-Ds/ (N-1) Carrier 3 X Ds-Ds/4 Ds-2Ds/(N-1) Carrier 1 Ds/2 Ds/4 Ds/(N-1) Carrier 2 -Ds/2 -Ds/4 -Ds/(N-1) Carrier 4 X -(Ds-Ds/4) -(Ds-2Ds/(N-1)) Carrier N-1 X x -(Ds-Ds/(N-1))

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

Method and system of carrier-based modulation for multilevel single stage buck-boost inverters comprising N-level carrier-based modulation technique with uniformly distributed shoot-through states where shoot-through states are equally distributed. The method and system belongs to the field of power electronics and semiconductor converter control and pertains to the modulation technics of multilevel inverters with impedance network where uniformly distributed shoot-through states are required.

Description

METHOD AND SYSTEM OF CARRIER-BASED MODULATION FOR MULTILEVEL SINGLE STAGE BUCK-BOOST INVERTERS Technical Field
This invention belongs to the field of power electronics and semiconductor converter control and pertains to the modulation technics of multilevel inverters with impedance network where uniformly distributed shoot-through states are required.
Background Art
There are several modulation techniques or shoot-through control methods in the literature for three-phase two-level Z source inverters. Mainly, these controls are classified as: simple boost control (SBC), maximum boost control (MBC), maximum constant boost control (MCBC), and modified space vector modulation control (MSVMBC). Among others, they have been used to control converters in several applications such as PV solar energy and fuel cells. In addition, all of those techniques can be used for a quasi-Z-source inverter or any other impedance source inverters. In order to select the most appropriate one, it is necessary to take into account the consideration that the shoot-through states must be carefully and centrally added (uniform distribution) in order to provide buck-boost operation.
Any carrier based modulation techniques are preferable than space vector control from industrial realization point of view. Space vector modulation has completely different approach and is not preferable due to complexity in implementation. At the same time carrier based principle it can be easily realize by means of Pulse‑Width-Modulation (PWM) microcontroller or low cost Field Programmable Gate Array (FPGA) or Complex Programmable Logic Device (CPLD).
In the last years studies have focused on the multilevel inverter topologies, modulation and control methods. As a result, a large number of modulation techniques have been proposed, each one featured by its disadvantages depending on the application. At the same time only few of them is invented for multilevel inverters with impedance network where shoot-through states are required. The recently described in scientific literature [Loh, P. C., Vilathgamuwa, D. M., Lai, Y. S., Chua, G. T., Li, Y.: „Pulsewidth modulation of Z-source inverters“, IEEE Trans. Power Electron., 2005, 20, (6), pp. 1346–1355.; Shen, M. S., Wang, J., Joseph, A., Peng, F. Z., Tolbert, L. M., Adams, D. J. „Constant Boost Control of the Z-Source Inverter to Minimize Current Ripple and Voltage Stress“, IEEE Trans. Ind. Appl., 2006, 42, (3), pp. 770-778.] example shows the sketch of the modulation technique that can be applied only for 3-level topology, but can not be generalised to any N-level solution. Also the shoot-through states are implemented by help of the same carrier signal that is used for main switching signal generation. It means that the shoot-through switching frequency is the same as main switching frequency, as a result bigger passive components of the impedance network are required.
Another solution [Husev, O., Stepenko, S., Roncero-Clemente, C., Romero‑Cadaval, E., Vinnikov, D.: “Single-Phase Three-Level Quasi-Z-Source Inverter with a New Boost Modulation Technique”, Proc. 38th Annual Conference on IEEE Industrial Electronics Society IECON 2012, Montreal, Canada, October 2012, pp. 5856 – 5861] based on carrier signals can be applied only for signal phase topology and has asymmetrical switching distribution. Such solution is suitable for application where impossible to provide uniform heat sink distribution for all transistors. It means that unbalanced thermal resistors for each transistor must be compensated by means of unbalanced modulation technique.
Disclosure of Invention
The goal of the present invention is to cover control solutions for any level single stage buck-boost inverter topologies based on carrier based modulation techniques and to develop modulation technique with double switching frequency shoot-through generation.
The goal of the present invention is achieved by the N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters, by means of adding special shoot-through carrier signal along with simultaneous shifting upper and lower carrier signals. The present invention is different by special shoot-through carrier signal with double frequency, that is absent in previous solutions, fully symmetrical transistors switching and presence of additional shifting of carries signals.
The present invention can be applied in the control system for any N-level inverter topology or multilevel cascaded (modular converters) topology. At the same time, it has double switching frequency of the shoot-through states distribution that allows reducing passive components of the impedance networks.
The present invention is different from prior art by carrier signal Sst (∊[0,1]), which has double frequency; carriers upper and lower are displaced Ds/2 respectively for 3-level application, in case of N-level application the displacement is defined in the Table 1; and the invention can be applied in the control system for any N-level inverter topology or multilevel cascaded (modular converters) topology, wherein at the same time, it has double switching frequency of the shoot-through states distribution that allows reducing passive components of the impedance networks.
Brief Description of Drawings
The present invention is described on the following drawings, where
FIG 1 describes three phase three-level impedance source grid connected inverter – this is a target of control where invention can be used;
FIG 2 describes N-level modular inverter – this another possible target of control where invention can be used;
FIG 3 describes proposed new N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters in particular for 3 phase 3-level impedance inverter. It illustrates proposed technique for a 3-level inverter as a special case of any multilevel inverter or modular structure;
FIG 4 describes the sketch of the implementation of the proposed technique for 3‑level application;
FIG 5 describes the N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters for any N-level inverter or N-modular inverter with impedance sources.
Best Mode for Carrying Out the Invention
FIG 1-3 contain the following symbols:
1 – input voltage source;
2 – impedance network: Z-source network, quasi-Z-source network, trans-Z-source network, Y-source network;
3 - 3-level neutral-point-clamped three phase inverter;
4 – output filter with three phase grid, three phase motor, any other AC load;
5 – 2-level H-bridge inverter;
6 – output filter with single phase grid, motor, any other AC load;
K – number of cells in cascaded inverter;
T1, T2, T3, T4, T5, T6, T7, T8, T9, T10, T11, T12 – switching elements of the inverter;
Ref_A, Ref_B, Ref_C – reference signals;
SSt (carrier Ds) – special shoot-through carrier signal;
C1 (carrier 1) – upper carrier signal;
C2 (carrier 2) – lower carrier signal;
Ds – shoot-through duty cycle.
FIG 1 depicts preferred embodiment of the system according to present invention, that comprises input voltage source 1, impedance network 2 (for example Z‑source network, quasi-Z-source network, trans-Z-source network, Y‑source network), inverter 3 (preferably N-level neutral point clamped inverter), output filter 4 comprising grid or any AC load. Such topology due to impedance network has shoot-through immunity.
In alternative embodiment the system according to present invention comprises modular (cascaded) structure with 2-level H-bridge inverters as shown in the FIG 2, wherein the system comprises at least one input voltage source 1, at least one impedance network 2 (for example Z-source network, quasi-Z-source network, trans-Z-source network, Y-source network), at least one inverter 3 (preferably 2‑level H-bridge inverter) and output filter 4 comprising single phase grid, motor, or any AC load. In this embodiment each inverter has own impedance network.
The system according to present invention described on the FIG 1 and FIG 2 is for implementing for any N-level inverter (for example 3-level, 5-level, 7-level) or modular inverter (for example H-bridge 3-level modular inverter). These topologies are identical from the control point of view. Number of level is strictly connected with number of cells: N=(2K-1), K=2, 3, 4...; Shoot-through states are generated in order to provide boost performance in both cases.
FIG 3 and FIG 4 illustrate the method according to present invention of N-level carrier-based modulation with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters as a particular case for 3-level 3-phase impedance source inverter with a frequency modulation index (m f ) equal to 4. FIG 3 illustrates the present method according to preferred embodiment comprising three modulating waves (preferably one wave per phase) and two triangular carriers (C1 upper ∊ [0,1] and C2 lower ∊ [-1,0]) are compared in order to obtain the different normal states of T1, T2, T5, T6, T9 and T10 and T3, T4, T7, T8, T11 and T12 have the complementary state of the other, respectively.
Another carrier signal Sst (∊[0,1]), but at double frequency, that is a main difference comparing to existed solutions, is used to generate the shoot-through states (S st ) by means of comparison with the constant value of D s . Operating in this way, uniformly distributed shoot-through states with the constant width during the whole output voltage period are achieved. As a result N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters characterised in that shoot-through states have double frequency and shoot-through is equally distributed. It allows reducing passive components of the impedance networks.
Due to the insertion of shoot-through, the output average phase to neutral voltages are modified and it is necessary to solve this problem. In order to maintain constant output average voltages, carriers upper and lower are displaced Ds/2 respectively and the reference value will be assured. FIG 3 illustrates how to perform this displacement. It is another difference of this invention. As a result N‑level carrier-based modulation technique with uniformly distributed shoot‑through states for multilevel single stage buck-boost inverters characterised in that additional carrier signals shifting provides sinusoidal output voltage waveform with maximum half cycle average value.
FIG 4 depicts the implementation sketch of the present invention. It shows the logic circuit diagram that must be realized in the FPGA or CPLD in order to implement proposed control strategy.
FIG 5 shows new N-level carrier-based modulation technique with uniformly distributed shoot-through states for multilevel single stage buck-boost inverters as a particular case for 5-level topology.
All together FIG 3 and FIG 5 show how to increase the number of level of the proposed control strategy and extend to any N-level topology. It can be done by means of adding carrier signals. Adding upper and lower carries leads to incremental by 2 number of level of the topology. At the same time, Table 1 illustrates the definition of the carrier signals shifting for any N-level topology. As a result N-level carrier-based modulation technique with uniformly distributed shoot‑through states for multilevel single stage buck-boost inverters characterised in that It can be applied to any multilevel inverter or multilevel cascaded (modular converters) topology by means of implementing additional carrier signals. Table 1
3-Level 5-Level N-Level
Carrier N-2 X X Ds-Ds/ (N-1)
Carrier 3 X Ds-Ds/4 Ds-2Ds/(N-1)
Carrier 1 Ds/2 Ds/4 Ds/(N-1)
Carrier 2 -Ds/2 -Ds/4 -Ds/(N-1)
Carrier 4 X -(Ds-Ds/4) -(Ds-2Ds/(N-1))
Carrier N-1 X x -(Ds-Ds/(N-1))

Claims (6)

  1. A method of carrier-based modulation for multilevel single stage buck-boost inverters, characterised in that the method comprises N-level carrier-based modulation technique with uniformly distributed shoot-through states where shoot‑through states are equally distributed.
  2. The method according to claim 1, characterised in that shoot-through states have double frequency.
  3. The method according to claim 1, characterised in that it can be applied to any multilevel inverter or multilevel cascaded (modular converters) topology by means of implementing additional carrier signals.
  4. The method according to claim 1, characterised in that additional carrier signals shifting provides sinusoidal output voltage waveform with maximum half cycle average value.
  5. A system for carrier-based modulation for multilevel single stage buck-boost inverters implementing N-level carrier-based modulation technique with uniformly distributed shoot-through states comprising input voltage source (1), impedance network (2), inverter (3), output filter (4), characterized in that the inverter (3) is N‑level neutral point clamped inverter and output filter (4) comprises grid or AC load.
  6. The system according to claim 5, characterized in that the inverter (3) is 2‑level H-bridge inverter and the output filter (4) comprises grid, motor or AC load.
PCT/EP2015/056787 2015-03-27 2015-03-27 Method and system of carrier-based modulation for multilevel single stage buck-boost inverters WO2016155762A1 (en)

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Publication number Priority date Publication date Assignee Title
CN111740597A (en) * 2020-06-22 2020-10-02 浙江大学 High-voltage drop modular direct-current power supply and control method thereof
CN111740597B (en) * 2020-06-22 2021-08-10 浙江大学 High-voltage drop modular direct-current power supply and control method thereof

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