TWI690620B - Electroless plating device and manufacturing method of metallized substrate - Google Patents

Electroless plating device and manufacturing method of metallized substrate Download PDF

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TWI690620B
TWI690620B TW107129308A TW107129308A TWI690620B TW I690620 B TWI690620 B TW I690620B TW 107129308 A TW107129308 A TW 107129308A TW 107129308 A TW107129308 A TW 107129308A TW I690620 B TWI690620 B TW I690620B
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unit
electroless plating
liquid
plating solution
reaction
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TW107129308A
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Chinese (zh)
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TW202009325A (en
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王彥智
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華紹國際有限公司
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Priority to TW107129308A priority Critical patent/TWI690620B/en
Priority to CN201910776565.1A priority patent/CN110438478A/en
Priority to CN201921367306.5U priority patent/CN210856333U/en
Publication of TW202009325A publication Critical patent/TW202009325A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • C23C18/1628Specific elements or parts of the apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1653Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1655Process features
    • C23C18/1664Process features with additional means during the plating process
    • C23C18/1669Agitation, e.g. air introduction
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus

Abstract

The present invention provides a plating device and a manufacturing method of a metallized substrate. The plating device includes a reaction unit, a carrying unit, and a stirring unit. The reaction unit is configured to retain a chemical plating solution. The carrying unit is configured to carry a target object, and the target object is immersed in the chemical plating solution by the carrying unit. The stirring unit is disposed in the reaction unit and configured to reciprocally move along a predetermined direction. The stirring unit includes a plurality of blades spaced apart from each other, and each of the blades is disposed at an inclined angle. Therefore, the target object can be metallized sufficiently and uniformly.

Description

化學鍍裝置及金屬化基板的製造方法 Chemical plating device and method for manufacturing metalized substrate

本發明涉及一種化學鍍裝置,特別是涉及一種具有化學鍍液擾動功能的化學鍍裝置,以及使用此化學鍍裝置的金屬化基板的製造方法。 The invention relates to an electroless plating device, in particular to an electroless plating device having a chemical plating solution disturbance function, and a method for manufacturing a metallized substrate using the electroless plating device.

按化學鍍(或稱無電鍍)不需要外加電壓,其被鍍物不需為導體,可以是塑膠、陶瓷或玻璃基材,且所形成的鍍層非常均勻,近年來被廣泛用於形成功能性或裝飾性鍍層。化學鍍是將被鍍物置於含有欲鍍金屬離子(如銅離子)的化學鍍液中,並通過適當的觸媒(如鈀)引發欲鍍金屬離子的連續還原沉積,以形成金屬鍍層。 According to electroless plating (or electroless plating), no external voltage is required. The object to be plated does not need to be a conductor. It can be a plastic, ceramic, or glass substrate, and the plating layer formed is very uniform. It has been widely used in recent years to form functionality Or decorative plating. In electroless plating, the object to be plated is placed in an electroless plating solution containing metal ions to be plated (such as copper ions), and continuous reduction deposition of metal ions to be plated is initiated by an appropriate catalyst (such as palladium) to form a metal plating layer.

電路板是電子產品的關鍵組件之一,在電路板中通常需要內部導電結構(如導電通孔),以建立內部線路之間或內部線路與外部線路之間的電性連接。然而,隨著電子產品愈來愈強調小型化與多功能的設計,電路板的尺寸連同其線路和內部導電結構也必須不斷縮小,現有的化學鍍技術在形成高深寬比的內部導電結構上仍面臨挑戰。例如,當微孔的孔徑越來越小,深寬比越來越大時,化學鍍液很難藉由擴散作用進入微孔內,更何況微孔內通常有空氣阻擋。 The circuit board is one of the key components of electronic products. In the circuit board, internal conductive structures (such as conductive vias) are usually required to establish electrical connections between internal circuits or between internal circuits and external circuits. However, with the increasing emphasis on miniaturization and multi-functional design of electronic products, the size of the circuit board, as well as its wiring and internal conductive structure must also be continuously reduced. The existing chemical plating technology still forms a high aspect ratio internal conductive structure. face the challenge. For example, when the pore size of the micropores becomes smaller and smaller, the aspect ratio becomes larger and larger, it is difficult for the electroless plating solution to enter the micropores by diffusion, not to mention that the micropores are usually blocked by air.

為了解決上述問題,雖然現有的化學鍍技術多採用噴流、產生氣泡或超音波震盪等方式來擾動化學鍍液,但是這些方式所產生的擾動範圍太小,化學鍍液不容易深入微孔內鍍上金屬,造成微孔內的導電結構存在缺陷(導電結構不連續)。因此,需要一種創 新的化學鍍技術,其既能在基材上形成厚度均勻的金屬鍍層,又能在基材內部形成高質量的導電結構。 In order to solve the above problems, although the existing electroless plating technology mostly uses the methods of jet flow, bubble generation, or ultrasonic oscillation to disturb the electroless plating solution, the disturbance range generated by these methods is too small, and the electroless plating solution is not easy to penetrate into the micropores. Metal, causing defects in the conductive structure in the micropores (discontinuous conductive structure). Therefore, an innovation is needed The new electroless plating technology can not only form a metal plating layer with a uniform thickness on the substrate, but also form a high-quality conductive structure inside the substrate.

本發明針對現有技術的不足提供一種具有化學鍍液擾動功能的化學鍍裝置,以解決化學鍍液很難深入高深寬比的微孔的問題。並且,提供一種使用此化學鍍裝置的金屬化基板的製造方法。 The present invention provides an electroless plating device with an electroless plating solution disturbance function in order to solve the problem that the electroless plating solution is difficult to penetrate into micropores with a high aspect ratio. Furthermore, a method for manufacturing a metallized substrate using this electroless plating apparatus is provided.

為了解決上述的技術問題,本發明所採用的其中一技術方案是:一種化學鍍裝置,其包括一反應單元、一承載單元以及一擾動單元。所述反應單元用以容納一化學鍍液。所述承載單元用以承載一被鍍物,且所述被鍍物通過所述承載單元以置於所述化學鍍液中。所述擾動單元設置於所述反應單元內,且能沿一特定方向往復移動,以均勻擾動所述化學鍍液,其中所述擾動單元包括多個間隔排列的葉片,且每一個所述葉片呈傾斜設置。 In order to solve the above technical problems, one of the technical solutions adopted by the present invention is: an electroless plating device, which includes a reaction unit, a carrying unit, and a disturbance unit. The reaction unit is used to contain a chemical plating solution. The carrying unit is used to carry an object to be plated, and the object to be plated is placed in the electroless plating solution through the carrying unit. The perturbation unit is disposed in the reaction unit and can reciprocate in a specific direction to uniformly perturb the electroless plating solution, wherein the perturbation unit includes a plurality of blades arranged at intervals, and each of the blades is Tilt setting.

為了解決上述的技術問題,本發明所採用的另外一技術方案是:一種金屬化基板的製造方法,其包括以下步驟。首先,提供一被鍍物。然後,將所述被鍍物置於一化學鍍液中。最後,通過所述化學鍍液進行化學鍍,並在化學鍍的過程中利用一擾動單元沿一特定方向往復移動,以均勻擾動所述化學鍍液,而將所述被鍍物均勻金屬化,其中所述擾動單元包括多個間隔排列的葉片,且每一個所述葉片呈傾斜設置。 In order to solve the above technical problems, another technical solution adopted by the present invention is: a method for manufacturing a metalized substrate, which includes the following steps. First, provide a plated object. Then, the object to be plated is placed in an electroless plating solution. Finally, electroless plating is performed through the electroless plating solution, and a disturbance unit is used to reciprocate in a specific direction during the electroless plating process to uniformly disturb the electroless plating solution and uniformly metalize the object to be plated. The disturbance unit includes a plurality of blades arranged at intervals, and each of the blades is arranged obliquely.

本發明的其中一有益效果在於,本發明所提供化學鍍裝置及金屬化基板的製造方法,其能通過“擾動單元能沿一特定方向往復移動,以均勻擾動化學鍍液”以及“擾動單元包括多個間隔排列的葉片,且每一個葉片呈傾斜設置”的技術方案,以使化學鍍液充分接觸被鍍物,而提高鍍膜的質量和合格率,避免鍍膜厚度不均勻或鍍膜斷開不連續的情形發生。 One of the beneficial effects of the present invention is that the electroless plating device and the method for manufacturing a metallized substrate provided by the present invention can pass "the disturbance unit can reciprocate in a specific direction to uniformly disturb the chemical plating solution" and "the disturbance unit includes Multiple blades arranged at intervals, and each blade is arranged obliquely" to make the chemical plating solution fully contact the object to be coated, thereby improving the quality and pass rate of the coating, avoiding uneven coating thickness or discontinuous disconnection of the coating Situation.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參 考與說明,並非用來對本發明加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention, however, the drawings provided are only for reference. The examination and description are not intended to limit the present invention.

D‧‧‧化學鍍裝置 D‧‧‧Electroless plating device

1‧‧‧反應單元 1‧‧‧Reaction unit

100‧‧‧槽口 100‧‧‧Notch

101‧‧‧第一液體入口 101‧‧‧First liquid inlet

102‧‧‧第二液體入口 102‧‧‧Second liquid inlet

2‧‧‧承載單元 2‧‧‧Bearing unit

3‧‧‧擾動單元 3‧‧‧disturbance unit

31‧‧‧基座 31‧‧‧Dock

32‧‧‧葉片 32‧‧‧blade

4‧‧‧回收單元 4‧‧‧Recycling unit

400‧‧‧第一液體出口 400‧‧‧First liquid outlet

401‧‧‧側向開口 401‧‧‧Side opening

5‧‧‧液體循環單元 5‧‧‧Liquid circulation unit

51‧‧‧液體回流管路 51‧‧‧Liquid return line

52‧‧‧循環幫浦 52‧‧‧Circulation pump

53‧‧‧過濾器 53‧‧‧filter

6‧‧‧供液單元 6‧‧‧Liquid supply unit

600‧‧‧第二液體出口 600‧‧‧Second liquid outlet

7‧‧‧液體輸送單元 7‧‧‧Liquid delivery unit

71‧‧‧液體輸送管路 71‧‧‧Liquid delivery pipeline

72‧‧‧輸送幫浦 72‧‧‧Transport Pump

8‧‧‧驅動單元 8‧‧‧Drive unit

81‧‧‧驅動器 81‧‧‧Drive

82‧‧‧連動件 82‧‧‧Link

83‧‧‧結合件 83‧‧‧Combination

W1‧‧‧被鍍物 W1‧‧‧to be plated

W11‧‧‧第一金屬層 W11‧‧‧First metal layer

W12‧‧‧第二金屬層 W12‧‧‧Second metal layer

W13‧‧‧通孔 W13‧‧‧Through hole

W14‧‧‧第三金屬層 W14‧‧‧third metal layer

W15‧‧‧內部線路 W15‧‧‧Internal circuit

d‧‧‧預定距離 d‧‧‧Reserved distance

θ‧‧‧預定傾斜角度 θ‧‧‧predetermined tilt angle

圖1為本發明第一實施例的化學鍍裝置的立體示意圖。 FIG. 1 is a schematic perspective view of an electroless plating apparatus according to a first embodiment of the invention.

圖2為本發明第一實施例的化學鍍裝置的平面示意圖。 2 is a schematic plan view of an electroless plating apparatus according to a first embodiment of the invention.

圖3為本發明第一實施例的化學鍍裝置中的擾動單元的其中一實施方式的立體示意圖。 3 is a schematic perspective view of one embodiment of a disturbance unit in an electroless plating apparatus according to a first embodiment of the invention.

圖4為圖3中IV部分的局部放大圖。 FIG. 4 is a partially enlarged view of part IV in FIG. 3.

圖5為本發明第一實施例的化學鍍裝置中的擾動單元的另外一實施方式的立體示意圖。 5 is a schematic perspective view of another embodiment of the disturbance unit in the chemical plating apparatus according to the first embodiment of the present invention.

圖6為本發明第一實施例的化學鍍裝置的其中一實施方式的部分平面示意圖。 6 is a schematic partial plan view of one embodiment of an electroless plating apparatus according to a first example of the present invention.

圖7為本發明第一實施例的化學鍍裝置的另外一實施方式的部分平面示意圖。 7 is a partial schematic plan view of another embodiment of the electroless plating apparatus according to the first example of the present invention.

圖8為本發明第二實施例的化學鍍裝置的部分平面示意圖。 8 is a schematic partial plan view of an electroless plating apparatus according to a second embodiment of the invention.

圖9為本發明第三實施例的化學鍍裝置的立體示意圖。 9 is a schematic perspective view of an electroless plating apparatus according to a third embodiment of the invention.

圖10為本發明的金屬化基板的製造方法的流程圖。 10 is a flowchart of a method of manufacturing a metallized substrate of the present invention.

圖11為本發明的金屬化基板的製造方法的的其中一製造過程示意圖。 11 is a schematic diagram of one of the manufacturing processes of the method of manufacturing the metallized substrate of the present invention.

圖12為本發明的金屬化基板的製造方法的的另外一製造過程示意圖。 12 is a schematic diagram of another manufacturing process of the method for manufacturing the metallized substrate of the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“化學鍍裝置及金屬化基板的製造方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明 本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following is a description of the embodiments of the "electroless plating apparatus and metallized substrate manufacturing method" disclosed by the present invention through specific specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments. Various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual sizes, and are declared in advance. The following embodiments will be described in further detail The related technical content of the present invention, but the disclosed content is not intended to limit the protection scope of the present invention.

應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 It should be understood that although terms such as “first”, “second”, and “third” may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" as used herein may include any combination of any one or more of the associated listed items, depending on the actual situation.

請參閱圖1及圖2,本發明一實施例提供一種化學鍍裝置D,其主要包括一反應單元1、一承載單元2及一擾動單元3。反應單元1用以容納化學鍍液,承載單元2用以承載被鍍物W1,且被鍍物W1通過承載單元2以置於化學鍍液中,擾動單元3設置於反應單元1內,且能沿一特定方向往復移動,以擾動均勻化學鍍液,藉此,可以縮短化學鍍的時間,且可以使被鍍物W1與化學鍍液充分接觸,從而在被鍍物W1上形成高質量的鍍層。在本實施例中,化學鍍液可以是化學鍍銅液、化學鍍鎳液或化學鍍磷鎳合金的鍍液,但本發明不以此為限。被鍍物W1可以是電子裝置的一部分(如外殼或零組件等),但本發明不以此為限。被鍍物W1的材質可以是金屬、塑膠、玻璃或陶磁,但本發明不以此為限。 Please refer to FIGS. 1 and 2. An embodiment of the present invention provides an electroless plating apparatus D, which mainly includes a reaction unit 1, a carrying unit 2 and a disturbance unit 3. The reaction unit 1 is used to contain the electroless plating solution, the carrier unit 2 is used to carry the object W1, and the object W1 is placed in the electroless plating solution through the carrier unit 2, the disturbance unit 3 is disposed in the reaction unit 1, and can Reciprocating in a specific direction to disturb the uniform electroless plating solution, thereby shortening the time of electroless plating, and allowing the object to be plated W1 to fully contact with the electroless plating solution to form a high-quality plating layer on the object to be plated W1 . In this embodiment, the electroless plating solution may be an electroless copper plating solution, an electroless nickel plating solution, or an electroless phosphorous nickel alloy plating solution, but the invention is not limited thereto. The object to be plated W1 may be a part of the electronic device (such as a housing or components, etc.), but the invention is not limited thereto. The material of the object W1 to be plated may be metal, plastic, glass or ceramic, but the invention is not limited thereto.

實際上,為了維持化學鍍液的活性和穩定性,以確保所形成鍍層的均勻性和緻密性,化學鍍裝置D另外還包括至少一回收單元4、一液體循環單元5、一供液單元6及一液體輸送單元7。回收單元4與反應單元1的頂部相互連通,用以回收從反應單元1的頂部溢出的化學鍍液。液體循環單元5連接於回收單元4與反應單元1的底部之間,用以將回收單元4所回收的化學鍍液沿一反重力方向送入反應單元1。供液單元6內儲存有配置好的新化學鍍液,且供液單元6通過液體輸送單元7以與反應單元1的底部相互連通,用以供應新的化學鍍液至反應單元1。 In fact, in order to maintain the activity and stability of the electroless plating solution to ensure the uniformity and compactness of the formed plating layer, the electroless plating apparatus D further includes at least a recovery unit 4, a liquid circulation unit 5, and a liquid supply unit 6 And a liquid delivery unit 7. The recovery unit 4 communicates with the top of the reaction unit 1 to recover the electroless plating solution overflowing from the top of the reaction unit 1. The liquid circulation unit 5 is connected between the recovery unit 4 and the bottom of the reaction unit 1, and is used to send the electroless plating solution recovered by the recovery unit 4 into the reaction unit 1 in an antigravity direction. The liquid supply unit 6 stores the configured new chemical plating solution, and the liquid supply unit 6 communicates with the bottom of the reaction unit 1 through the liquid delivery unit 7 to supply the new chemical plating solution to the reaction unit 1.

值得注意的是,化學鍍裝置D通過回收單元4將仍包含有效成分的化學鍍液予以回收,並通過液體循環單元5將回收化學鍍液再利用,可以減少化學鍍液的成本。雖然在化學鍍的過程中,反應單元1內化學鍍液中的欲鍍金屬離子會不斷的被消耗掉,但是反應單元1可以通過液體輸送單元7從供液單元6導入新化學鍍液,以將欲鍍金屬離子的濃度控制在一定的濃度範圍內。 It is worth noting that the electroless plating device D recovers the electroless plating solution that still contains active components through the recovery unit 4 and reuses the recovered electroless plating solution through the liquid circulation unit 5 to reduce the cost of the electroless plating solution. Although in the process of electroless plating, the metal ions in the electroless plating solution in the reaction unit 1 will be continuously consumed, but the reaction unit 1 can introduce a new electroless plating solution from the liquid supply unit 6 through the liquid delivery unit 7 to Control the concentration of metal ions to be plated within a certain concentration range.

請複參閱圖1及圖2,反應單元1可以是反應槽,其頂部具有一槽口100,且底部具有一第一液體入口101及一第二液體入口102,如此,可使化學鍍液在反應單元1內再生並循環使用,此部分細節容後詳述。在本實施例中,反應單元1可包括一加熱器(圖中未顯示),用以加熱化學鍍液至所需的溫度,例如20-90℃,從而提高化學鍍的效率。反應單元1還可包括多個感測元件(圖中未顯示),例如溫度感測器、pH感測器及導電度感測器等。溫度感測器能測出化學鍍液的溫度,pH感測器測出化學鍍液的pH值,導電度感測器能測出化學鍍液中金屬離子的濃度。然而,本發明不以上述所舉的例子為限。 Please refer to FIGS. 1 and 2 again. The reaction unit 1 may be a reaction tank with a notch 100 at the top and a first liquid inlet 101 and a second liquid inlet 102 at the bottom. The reaction unit 1 is regenerated and recycled, and the details of this part will be described in detail later. In this embodiment, the reaction unit 1 may include a heater (not shown in the figure) for heating the electroless plating solution to a desired temperature, for example, 20-90°C, thereby improving the efficiency of electroless plating. The reaction unit 1 may further include a plurality of sensing elements (not shown in the figure), such as a temperature sensor, a pH sensor, and a conductivity sensor. The temperature sensor can measure the temperature of the chemical plating solution, the pH sensor can measure the pH value of the chemical plating solution, and the conductivity sensor can measure the concentration of metal ions in the chemical plating solution. However, the invention is not limited to the examples given above.

承載單元2可具有至少一個固定部(圖中未顯示),用以固定被鍍物W1。固定部可具有本領域技術人員所熟知的構造,例如,固定部可通過夾持的方式將被鍍物W1固定在承載單元2上,原則上固定部的數量與承載單元2上被鍍物W1的數量相同,即每一個固定部配合一個被鍍物W1。承載單元2也可具有一鏤空區域(圖中未顯示),藉此,被擾動的化學鍍液可通過鏤空區域與被鍍物W1相接觸。 The carrying unit 2 may have at least one fixing portion (not shown in the figure) for fixing the object W1. The fixing part may have a structure well known to those skilled in the art. For example, the fixing part may fix the object W1 to the carrier unit 2 by clamping. In principle, the number of the fixing parts and the object W1 on the carrier unit 2 are plated The number is the same, that is, each fixed part cooperates with one object W1 to be plated. The carrying unit 2 may also have a hollowed-out area (not shown in the figure), whereby the disturbed chemical plating solution can contact the object W1 to be plated through the hollowed-out area.

請複參閱圖2,並配合圖6及圖7所示,擾動單元3可與承載單元2呈相對設置,且擾動單元3與承載單元2之間具一預定距離d,預定距離d優選為0.5mm至300mm。擾動單元3可被一驅動單元8驅動而沿著水平或垂直方向往復移動。進一步來說,驅動單元8可具有本領域技術人員所熟知的構造,例如,驅動單元8 可包括一驅動器81(如馬達)、一連動件82及一結合件83。其中結合件83用以連接擾動單元3,並帶動擾動單元3做往復移動。連動件82的一端連接驅動器81且另一端連接結合件83,藉此,連動件82能受到驅動器81的控制以推動結合件83,使其帶動擾動單元3向前或向上移動一定行程。或者,連動件82能受到驅動器81的控制以拉動結合件83,使其帶動擾動單元3向後或向下移動一定行程。 Please refer to FIG. 2 again, and in conjunction with FIGS. 6 and 7, the disturbance unit 3 and the bearing unit 2 can be arranged oppositely, and the disturbance unit 3 and the bearing unit 2 have a predetermined distance d, and the predetermined distance d is preferably 0.5 mm to 300mm. The disturbance unit 3 can be driven by a driving unit 8 to reciprocate in the horizontal or vertical direction. Further, the driving unit 8 may have a structure well known to those skilled in the art, for example, the driving unit 8 It may include a driver 81 (such as a motor), a linking member 82 and a coupling member 83. The coupling member 83 is used to connect the disturbance unit 3 and drive the disturbance unit 3 to reciprocate. One end of the link 82 is connected to the driver 81 and the other end is connected to the link 83, whereby the link 82 can be controlled by the driver 81 to push the link 83 to move the disturbance unit 3 forward or upward by a certain stroke. Alternatively, the link 82 can be controlled by the driver 81 to pull the coupling 83 so that it drives the perturbation unit 3 to move backward or downward by a certain stroke.

請複參閱圖3至圖5,並配合圖6及圖7所示,在本實施例中,擾動單元3的往復移動頻率優選為0.1Hz至15Hz,且擾動單元3的每一次往復移動行程優選為0.3mm至50mm。擾動單元3可包括一基座31及多個間隔排列於基座31上的葉片32。基座31可為框架形式,但本發明不以此為限,且基座31的一側連接驅動單元8的結合件83。藉此,多個葉片32可與基座31一起被驅動單元8驅動。進一步來說,如圖3所示,當擾動單元3是沿著垂直方向往復移動時,每一個葉片32皆沿著水平方向延伸,且呈向下傾斜設置。如圖5所示,當擾動單元3是沿著水平方向往復移動時,每一個葉片32皆沿著垂直方向延伸,且呈向左或向右傾斜設置。 Please refer to FIG. 3 to FIG. 5 together with FIG. 6 and FIG. 7. In this embodiment, the reciprocating frequency of the disturbance unit 3 is preferably 0.1 Hz to 15 Hz, and each reciprocating stroke of the disturbance unit 3 is preferably It is 0.3mm to 50mm. The disturbance unit 3 may include a base 31 and a plurality of blades 32 arranged at intervals on the base 31. The base 31 may be in the form of a frame, but the invention is not limited thereto, and one side of the base 31 is connected to the coupling member 83 of the driving unit 8. Thereby, the plurality of blades 32 can be driven by the driving unit 8 together with the base 31. Further, as shown in FIG. 3, when the disturbance unit 3 reciprocates along the vertical direction, each blade 32 extends along the horizontal direction and is inclined downward. As shown in FIG. 5, when the disturbance unit 3 reciprocates along the horizontal direction, each blade 32 extends along the vertical direction, and is arranged inclined to the left or right.

值得注意的是,每一個葉片32與一相對應的水平面之間具有一預定傾斜角度θ,且預定傾斜角度θ優選為15°至85°。藉此,在特定的往復移動頻率和行程下,可以使化學鍍液產生適當程度的擾動。一旦化學鍍液的擾動程度過大,所形成鍍層的表面平整度會降低。一旦化學鍍液的擾動程度不足,其將難以深入高深寬比溝槽、通孔或類似結構內,造成內部導電結構斷開不連續,存在部分無法導電的缺陷。 It is worth noting that each blade 32 has a predetermined inclination angle θ between a corresponding horizontal plane, and the predetermined inclination angle θ is preferably 15° to 85°. In this way, under a specific reciprocating frequency and stroke, the electroless plating solution can be disturbed to an appropriate degree. Once the degree of disturbance of the electroless plating solution is too large, the flatness of the surface of the formed plating layer will decrease. Once the degree of disturbance of the electroless plating solution is insufficient, it will be difficult to penetrate into high aspect ratio trenches, through holes, or similar structures, causing the internal conductive structure to be disconnected discontinuously, and there is a defect that some of them cannot conduct electricity.

請參閱圖8,為了大規模處理被鍍物W1,化學鍍裝置D可包括多個承載單元2及多個擾動單元3,擾動單元3的數量可與承載單元2的數量相等,亦即每一個承載單元2配合一個擾動單元3。藉此,每一個承載單元2上的被鍍物W1附近的化學鍍液都可被 相對應的擾動單元3所擾動,以提高化學鍍的效率和質量。 Referring to FIG. 8, in order to process the object W1 to be plated on a large scale, the electroless plating apparatus D may include a plurality of carrier units 2 and a plurality of disturbance units 3, and the number of disturbance units 3 may be equal to the number of the carrier units 2, that is, each The bearing unit 2 cooperates with a disturbance unit 3. Thereby, the electroless plating solution near the object W1 on each carrier unit 2 can be The perturbation unit 3 is perturbed to improve the efficiency and quality of electroless plating.

請複參閱圖1,並配合圖2及圖9所示,回收單元4可以是回收槽,其具有一第一液體出口400。液體循環單元5包括一液體回流管路51、一循環幫浦52及一過濾器53。其中液體回流管路51的一端與反應單元1底部的第一液體入口101相互連通,且另一端與回收單元4的第一液體出口400相互連通。循環幫浦52接設於液體回流管路51上,用以將收集於回收單元4內的化學鍍液重新導入反應單元1。過濾器53接設於液體回流管路51上,且位於循環幫浦52與第一液體入口101之間,用以將化學鍍液中的沉澱物濾除。 Please refer to FIG. 1 again, and in conjunction with FIGS. 2 and 9, the recovery unit 4 may be a recovery tank, which has a first liquid outlet 400. The liquid circulation unit 5 includes a liquid return line 51, a circulation pump 52 and a filter 53. One end of the liquid return line 51 communicates with the first liquid inlet 101 at the bottom of the reaction unit 1, and the other end communicates with the first liquid outlet 400 of the recovery unit 4. The circulation pump 52 is connected to the liquid return line 51 to re-introduce the chemical plating solution collected in the recovery unit 4 into the reaction unit 1. The filter 53 is connected to the liquid return line 51, and is located between the circulation pump 52 and the first liquid inlet 101, and is used to filter the precipitate in the electroless plating solution.

在本實施例中,如圖1及圖2所示,化學鍍裝置D可包括兩個回收單元4,且其分別設置於反應單元1的左右兩側,其中每一個回收單元4皆具有一側向開口401,其與反應單元1的槽口100相互連通。或者,如圖9所示,化學鍍裝置D可包括單一回收單元4,且其圍繞反應單元1的外周設置。藉此,當化學鍍液從反應單元1的槽口100溢出時,便可以流入回收單元4而被收集起來。 In this embodiment, as shown in FIGS. 1 and 2, the electroless plating apparatus D may include two recovery units 4, which are respectively disposed on the left and right sides of the reaction unit 1, and each of the recovery units 4 has one side The opening 401 communicates with the slot 100 of the reaction unit 1. Alternatively, as shown in FIG. 9, the electroless plating apparatus D may include a single recovery unit 4, and it is disposed around the outer periphery of the reaction unit 1. Thereby, when the electroless plating solution overflows from the slot 100 of the reaction unit 1, it can flow into the recovery unit 4 and be collected.

供液單元6可以是原料槽,其具有一第二液體出口600。液體輸送單元7包括一液體輸送管路71及一輸送幫浦72。其中液體輸送管路71的一端□與反應單元1底部的第二液體入口相互連通,且另一端與供液單元6的第二液體出口600相互連通。輸送幫浦72接設於液體輸送管路71上,用以將新化學鍍液導入反應單元1與回收化學鍍液調和後,作為反應液進行化學鍍。 The liquid supply unit 6 may be a raw material tank, which has a second liquid outlet 600. The liquid delivery unit 7 includes a liquid delivery line 71 and a delivery pump 72. One end of the liquid delivery line 71 communicates with the second liquid inlet at the bottom of the reaction unit 1, and the other end communicates with the second liquid outlet 600 of the liquid supply unit 6. The conveying pump 72 is connected to the liquid conveying pipe 71 for introducing the new chemical plating solution into the reaction unit 1 and reconciling the recovered chemical plating solution, and then performing chemical plating as the reaction solution.

請參閱圖10,並配合圖11及圖12所示,前述之化學鍍裝置D可以在一被鍍物W1上形成鍍層,因此,本發明另提供一種金屬化基板的製造方法。首先,執行步驟S100,提供一被鍍物。然後,執行步驟S102,將被鍍物置於一化學鍍液中。最後,執行步驟S104,通過化學鍍液進行化學鍍,並在化學鍍的過程中利用一擾動單元沿一特定方向往復移動,以擾動化學鍍液。 Please refer to FIG. 10, and in conjunction with FIG. 11 and FIG. 12, the aforementioned electroless plating device D can form a plating layer on an object W1. Therefore, the present invention also provides a method for manufacturing a metallized substrate. First, step S100 is executed to provide an object to be plated. Then, step S102 is executed to place the object to be plated in an electroless plating solution. Finally, step S104 is executed to perform electroless plating through the electroless plating solution, and use a perturbation unit to reciprocate in a specific direction during the electroless plating process to disturb the electroless plating solution.

進一步來說,如圖11所示,在進行化學鍍時,被擾動的化學鍍液可以充分接觸到被鍍物W1,同時化學鍍液中的金屬離子會還原成金屬單質析出,而在被鍍物W1的一表面上形成一連續均勻且緻密的第一金屬層W11。實際上,在進行化學鍍之前,可利用噴塗、旋塗、浸塗、網板印刷或轉印等方式,先在被鍍物W1的一表面上形成一觸媒層(圖中未顯示),用以促進欲鍍金屬離子的還原沈積。觸媒層可根據欲鍍的金屬來選擇適當的觸媒,以鎳或銅鍍層為例,觸媒層可使用貴金屬觸媒,其具體可舉出金(Au)、銀(Ag)、鈀(Pd)、鉑(Pt)、釕(Ru)等。觸媒層中之觸媒在化學鍍時是作為起始觸媒,一旦有欲鍍金屬離子被還原的金屬單質,便可以進行自催化反應,以繼續催化附近尚未被還原的欲鍍金屬離子。 Further, as shown in FIG. 11, when electroless plating is performed, the disturbed electroless plating solution can fully contact the object W1, and at the same time, the metal ions in the electroless plating solution will be reduced to the metal elemental precipitation, and the A continuous uniform and dense first metal layer W11 is formed on one surface of the object W1. In fact, before electroless plating, a catalyst layer (not shown in the figure) can be formed on a surface of the object W1 by spraying, spin coating, dip coating, screen printing, or transfer printing. Used to promote the reduction deposition of metal ions to be plated. The catalyst layer can select an appropriate catalyst according to the metal to be plated. Taking nickel or copper plating as an example, the catalyst layer can use a precious metal catalyst. Specific examples include gold (Au), silver (Ag), and palladium ( Pd), platinum (Pt), ruthenium (Ru), etc. The catalyst in the catalyst layer is used as the initial catalyst during electroless plating. Once there is a metal element whose metal ions are to be reduced, an autocatalytic reaction can be carried out to continue to catalyze the metal ions to be plated that have not been reduced nearby.

在形成第一金屬層W11之後,可將帶有第一金屬層W11的被鍍物W1置於一電鍍液中,並在適當的條件下通過第一金屬層W11進行電鍍,以形成一第二金屬層W12。關於電鍍的參數條件,例如溫度、時間、電流密度等,本領域技術人員可根據實際需要進行調整。在本實施例中,第一金屬層W11的材質可以是鎳,第二金屬層W12的材質可以是銅,但本發明不以此為限。 After the first metal layer W11 is formed, the object W1 with the first metal layer W11 can be placed in a plating solution and electroplated through the first metal layer W11 under appropriate conditions to form a second Metal layer W12. Regarding the parameter conditions of electroplating, such as temperature, time, current density, etc., those skilled in the art can adjust it according to actual needs. In this embodiment, the material of the first metal layer W11 may be nickel, and the material of the second metal layer W12 may be copper, but the invention is not limited thereto.

另外,如圖12所示,即便被鍍物W1上具有高深寬比的通孔W13,化學鍍液在擾動單元3的作用下,仍然可以深入通孔W13內,並在通孔W13內形成一連續的第三金屬層W14,而第三金屬層W14可以將內部線路W15可靠地向外導通。 In addition, as shown in FIG. 12, even if the object to be plated W1 has a through hole W13 with a high aspect ratio, the electroless plating solution can still penetrate into the through hole W13 under the action of the disturbance unit 3 and form a through hole W13 The continuous third metal layer W14, and the third metal layer W14 can reliably conduct the internal wiring W15 outward.

[實施例的有益效果] [Beneficial effect of embodiment]

本發明的其中一有益效果在於,本發明所提供化學鍍裝置及金屬化基板的製造方法,其能通過“擾動單元能沿一特定方向往復移動,以均勻擾動化學鍍液”以及“擾動單元包括多個間隔排列的葉片,且每一個葉片呈傾斜設置”的技術方案,以使化學鍍液充分接觸被鍍物,而提高鍍膜的質量和合格率,避免鍍膜厚度 不均勻或鍍膜斷開不連續的情形發生。 One of the beneficial effects of the present invention is that the chemical plating apparatus and the method of manufacturing a metallized substrate provided by the present invention can pass the "disturbance unit can reciprocate in a specific direction to uniformly disturb the chemical plating solution" and "the disturbance unit includes Multiple blades arranged at intervals, and each blade is arranged obliquely", so that the chemical plating solution can fully contact the object to be coated, thereby improving the quality and pass rate of the coating, and avoiding the thickness of the coating Non-uniform or discontinuous disconnection occurs.

更進一步來說,擾動單元上每一個葉片與一相對應的水平面之間具有一預定傾斜角度,因而,其在特定的往復移動頻率和行程下,可以使化學鍍液產生適當程度的擾動,而深入高深寬比溝槽、通孔或類似結構內反應並沉積出高質量的導體結構。 Furthermore, each blade on the perturbation unit has a predetermined angle of inclination with a corresponding horizontal plane. Therefore, at a specific reciprocating frequency and stroke, it can cause an appropriate level of perturbation to the electroless plating solution, and Deep into high-aspect-ratio trenches, vias or similar structures to react and deposit high-quality conductor structures.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The content disclosed above is only a preferred and feasible embodiment of the present invention, and therefore does not limit the scope of the patent application of the present invention, so any equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. Within the scope of the patent.

D‧‧‧化學鍍裝置 D‧‧‧Electroless plating device

1‧‧‧反應單元 1‧‧‧Reaction unit

100‧‧‧槽口 100‧‧‧Notch

101‧‧‧第一液體入口 101‧‧‧First liquid inlet

102‧‧‧第二液體入口 102‧‧‧Second liquid inlet

2‧‧‧承載單元 2‧‧‧Bearing unit

3‧‧‧擾動單元 3‧‧‧disturbance unit

4‧‧‧回收單元 4‧‧‧Recycling unit

400‧‧‧第一液體出口 400‧‧‧First liquid outlet

401‧‧‧側向開口 401‧‧‧Side opening

5‧‧‧液體循環單元 5‧‧‧Liquid circulation unit

51‧‧‧液體回流管路 51‧‧‧Liquid return line

52‧‧‧循環幫浦 52‧‧‧Circulation pump

53‧‧‧過濾器 53‧‧‧filter

6‧‧‧供液單元 6‧‧‧Liquid supply unit

600‧‧‧第二液體出口 600‧‧‧Second liquid outlet

7‧‧‧液體輸送單元 7‧‧‧Liquid delivery unit

71‧‧‧液體輸送管路 71‧‧‧Liquid delivery pipeline

72‧‧‧輸送幫浦 72‧‧‧Transport Pump

W1‧‧‧被鍍物 W1‧‧‧to be plated

Claims (15)

一種化學鍍裝置,其包括:一反應單元,其用以容納一化學鍍液;一承載單元,其用以承載一被鍍物,且所述被鍍物通過所述承載單元以置於所述化學鍍液中;以及一擾動單元,其設置於所述反應單元內,且能沿一特定方向往復移動,以均勻擾動所述化學鍍液,其中所述擾動單元包括多個間隔排列的葉片,且每一個所述葉片呈傾斜設置;其中,所述擾動單元與所述承載單元呈相對設置,且所述擾動單元與所述承載單元之間具一預定距離,所述預定距離為0.5mm至300mm。 An electroless plating device includes: a reaction unit for accommodating an electroless plating solution; and a carrying unit for carrying an object to be plated, and the object to be plated passes through the carrying unit to be placed in the In an electroless plating solution; and a perturbation unit, which is disposed in the reaction unit and can reciprocate in a specific direction to uniformly perturb the electroless plating solution, wherein the perturbation unit includes a plurality of blades arranged at intervals, And each of the blades is arranged obliquely; wherein, the disturbance unit and the carrying unit are arranged oppositely, and there is a predetermined distance between the disturbance unit and the carrying unit, and the predetermined distance is 0.5 mm to 300mm. 如請求項1所述的化學鍍裝置,其中,所述擾動單元的往復移動頻率為0.1Hz至15Hz,所述擾動單元的每一次往復移動行程為0.3mm至50mm。 The electroless plating device according to claim 1, wherein the reciprocating frequency of the disturbance unit is 0.1 Hz to 15 Hz, and each reciprocating stroke of the disturbance unit is 0.3 mm to 50 mm. 如請求項1所述的化學鍍裝置,其中,每一個所述葉片與一相對應的水平面之間具有一預定傾斜角度,所述預定傾斜角度為15°至85°。 The electroless plating apparatus according to claim 1, wherein each of the blades has a predetermined tilt angle between a corresponding horizontal plane, and the predetermined tilt angle is 15° to 85°. 如請求項1所述的化學鍍裝置,其還包括:至少一回收單元,其與所述反應單元的頂部相互連通,用以回收從所述反應單元的頂部溢出的所述化學鍍液;以及一液體循環單元,其連接於所述回收單元與所述反應單元的底部之間,用以將所述回收單元所回收的所述化學鍍液沿一反重力方向送入所述反應單元。 The electroless plating apparatus according to claim 1, further comprising: at least one recovery unit communicating with the top of the reaction unit to recover the electroless plating solution overflowing from the top of the reaction unit; and A liquid circulation unit is connected between the recovery unit and the bottom of the reaction unit, and is used to send the electroless plating solution recovered by the recovery unit into the reaction unit in an antigravity direction. 如請求項4所述的化學鍍裝置,其中,所述反應單元的底部具有一第一液體入口,所述回收單元具有一第一液體出口,所述液體循環單元包括一液體回流管路、一循環幫浦以及一過濾器,所述液體回流管路的一端與所述第一液體入口相互連通, 且另一端與所述第一液體出口相互連通,所述循環幫浦接設於所述液體回流管路上,所述過濾器接設於所述液體回流管路上,且位於所述循環幫浦與所述第一液體入口之間。 The chemical plating apparatus according to claim 4, wherein the bottom of the reaction unit has a first liquid inlet, the recovery unit has a first liquid outlet, and the liquid circulation unit includes a liquid return line, a A circulation pump and a filter, one end of the liquid return line communicates with the first liquid inlet, And the other end communicates with the first liquid outlet, the circulation pump is connected to the liquid return line, the filter is connected to the liquid return line, and is located at the circulation pump and Between the first liquid inlet. 如請求項1所述的化學鍍裝置,其還包括一供液單元,所述供液單元內儲存有新的所述化學鍍液,且所述供液單元通過一液體輸送單元以與所述反應單元的底部相互連通,用以供應新的所述化學鍍液至所述反應單元。 The chemical plating apparatus according to claim 1, further comprising a liquid supply unit in which the new chemical plating liquid is stored, and the liquid supply unit passes through a liquid delivery unit to communicate with the The bottom of the reaction unit communicates with each other to supply the new electroless plating solution to the reaction unit. 如請求項6所述的化學鍍裝置,其中,所述反應單元的底部具有一第二液體入口,所述供液單元具有一第二液體出口,所述液體輸送單元包括一液體輸送管路以及一輸送幫浦,所述液體輸送管路的一端與所述第二液體入口相互連通,且另一端與所述第二液體出口相互連通,所述輸送幫浦接設於所述液體輸送管路上。 The electroless plating apparatus according to claim 6, wherein the bottom of the reaction unit has a second liquid inlet, the liquid supply unit has a second liquid outlet, and the liquid delivery unit includes a liquid delivery line and A conveying pump, one end of the liquid conveying pipe communicates with the second liquid inlet, and the other end communicates with the second liquid outlet, the conveying pump is connected to the liquid conveying pipe . 如請求項1所述的化學鍍裝置,其中,所述反應單元為一反應槽,且所述反應槽的頂部具有一槽口,所述回收單元為一暫存槽,所述暫存槽設置於所述反應槽的一側,且與所述槽口相互連通。 The chemical plating apparatus according to claim 1, wherein the reaction unit is a reaction tank, and a top of the reaction tank has a notch, and the recovery unit is a temporary storage tank, and the temporary storage tank is provided It is on one side of the reaction tank and communicates with the notch. 如請求項1所述的化學鍍裝置,其中,所述反應單元為一反應槽,且所述反應槽的頂部具有一槽口,所述回收單元為一暫存槽,所述暫存槽圍繞所述反應槽的外周,且與所述槽口相互連通。 The electroless plating apparatus according to claim 1, wherein the reaction unit is a reaction tank, and a top of the reaction tank has a notch, and the recovery unit is a temporary storage tank surrounded by the temporary storage tank The outer periphery of the reaction tank communicates with the notch. 一種金屬化基板的製造方法,其包括:提供一被鍍物;將所述被鍍物置於一化學鍍液中;以及通過所述化學鍍液進行化學鍍,並在化學鍍的過程中利用一擾動單元沿一特定方向往復移動,以均勻擾動所述化學鍍液,而將所述被鍍物均勻金屬化,其中所述擾動單元包括多個間隔排列的葉片,且每一個所述葉片呈傾斜設置; 其中,所述擾動單元與所述被鍍物呈相對設置,且所述擾動單元與所述被鍍物之間具一預定距離,所述預定距離為0.5mm至300mm。 A method for manufacturing a metallized substrate, comprising: providing an object to be plated; placing the object to be plated in an electroless plating solution; and performing electroless plating through the electroless plating solution, and using an The perturbation unit reciprocates in a specific direction to uniformly perturb the electroless plating solution and uniformly metalize the object to be plated, wherein the perturbation unit includes a plurality of blades arranged at intervals, and each of the blades is inclined Set up Wherein, the perturbation unit and the object to be plated are arranged oppositely, and there is a predetermined distance between the perturbation unit and the object to be plated, and the predetermined distance is 0.5 mm to 300 mm. 如請求項10所述的金屬化基板的製造方法,其中,在進行化學鍍的步驟中,所述擾動單元的往復移動頻率為0.1Hz至15Hz,所述擾動單元的每一次往復移動行程為0.3mm至50mm。 The method for manufacturing a metallized substrate according to claim 10, wherein in the step of performing electroless plating, the reciprocating frequency of the perturbation unit is 0.1 Hz to 15 Hz, and each reciprocating stroke of the perturbation unit is 0.3 mm to 50mm. 如請求項10所述的金屬化基板的製造方法,其中,每一個所述葉片與一相對應的水平面之間具有一預定傾斜角度,所述預定傾斜角度為15°至85°。 The method of manufacturing a metallized substrate according to claim 10, wherein each of the blades has a predetermined angle of inclination with a corresponding horizontal plane, and the predetermined angle of inclination is 15° to 85°. 如請求項10所述的金屬化基板的製造方法,其中,在進行化學鍍的步驟中,所述被鍍物的一表面上形成有一第一金屬層。 The method for manufacturing a metallized substrate according to claim 10, wherein in the step of performing electroless plating, a first metal layer is formed on a surface of the object to be plated. 如請求項13所述的金屬化基板的製造方法,其中,在進行化學鍍的步驟之後,還包括通過一電鍍液進行電鍍,以形成一第二金屬層於所述第一金屬層上。 The method for manufacturing a metallized substrate according to claim 13, wherein after the step of performing electroless plating, electroplating is further performed by a plating solution to form a second metal layer on the first metal layer. 如請求項10所述的金屬化基板的製造方法,其中,在進行化學鍍的步驟中,所述被鍍物的一高深寬比的通孔內形成有一第三金屬層。 The method for manufacturing a metallized substrate according to claim 10, wherein in the step of performing electroless plating, a third metal layer is formed in a through hole with a high aspect ratio of the object to be plated.
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