TWI613683B - Coating composition for transparent conductive film, transparent conductive film and method for fabricating the same - Google Patents

Coating composition for transparent conductive film, transparent conductive film and method for fabricating the same Download PDF

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TWI613683B
TWI613683B TW103100975A TW103100975A TWI613683B TW I613683 B TWI613683 B TW I613683B TW 103100975 A TW103100975 A TW 103100975A TW 103100975 A TW103100975 A TW 103100975A TW I613683 B TWI613683 B TW I613683B
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conductive film
coating composition
transparent conductive
sol
protective layer
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TW201435927A (en
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李聖賢
金京恩
金聖培
李炳昱
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東進世美肯有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24Electrically-conducting paints
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/65Additives macromolecular
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/70Additives characterised by shape, e.g. fibres, flakes or microspheres
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/001Conductive additives

Abstract

本發明提供一種透明導電性膜及其製造方法與透明導電性膜塗布組成物,該透明導電性膜不僅具有優異表面電阻、耐環境性、全透光性及霧度之特性,且在濕式蝕刻程序中亦可輕易地蝕刻並且折射率容易調節,因此可有用地用於液晶顯示裝置、電漿顯示裝置、觸控面板、電場發光裝置、薄膜太陽電池、染料敏化太陽電池、無機物結晶質太陽電池等之電極。本發明之透明導電性膜塗布組成物之特徵在於包含1次導電性膜塗布組成物及保護層之塗布組成物,該1次導電性膜塗布組成物包含金屬奈米線及分散液,且該保護層之塗布組成物包含選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上的溶膠,又,本發明之透明導電性膜之製造方法係塗布且乾燥前述1次導電性膜塗布組成物及保護層塗布組成物,以製造透明導電性膜。 The invention provides a transparent conductive film, a method for manufacturing the same, and a transparent conductive film coating composition. The transparent conductive film not only has the characteristics of excellent surface resistance, environmental resistance, full light transmittance, and haze, but also is in a wet type. It can also be easily etched during the etching process and the refractive index is easily adjusted, so it can be usefully used in liquid crystal display devices, plasma display devices, touch panels, electric field light-emitting devices, thin-film solar cells, dye-sensitized solar cells, and inorganic crystals Electrodes for solar cells, etc. The transparent conductive film coating composition of the present invention is characterized by including a primary conductive film coating composition and a protective layer coating composition, the primary conductive film coating composition includes a metal nanowire and a dispersion liquid, and the The coating composition of the protective layer includes at least one sol selected from the group consisting of a magnesium fluoride sol, an inorganic sol, an inorganic-inorganic composite sol, and an organic-inorganic composite sol, and the transparent conductive film of the present invention. The manufacturing method is to apply and dry the aforementioned conductive film coating composition and the protective layer coating composition to produce a transparent conductive film.

Description

透明導電性膜塗布組成物、透明導電性膜及透明導電性膜之製造方法 Transparent conductive film coating composition, transparent conductive film, and method for manufacturing transparent conductive film 技術領域 Technical field

本發明係有關於一種透明導電性膜塗布組成物、透明導電性膜及其製造方法,更詳而言之,有關於特徵在於含有包含金屬奈米線及分散液之1次導電性膜塗布組成物,及包含選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上之溶膠之保護層塗布組成物的透明導電性膜塗布組成物,同時或依序塗布且乾燥前述1次導電性膜塗布組成物及保護層塗布組成物以製造透明導電性膜之方法及由其製成之透明導電性膜。 The present invention relates to a transparent conductive film coating composition, a transparent conductive film, and a method for manufacturing the same. More specifically, the present invention relates to a single-time conductive film coating composition comprising a metal nanowire and a dispersion liquid. And a transparent conductive film coating composition containing a protective layer coating composition of one or more sols selected from the group consisting of a magnesium fluoride sol, an inorganic sol, an inorganic-inorganic composite sol, and an organic-inorganic composite sol. A method for producing a transparent conductive film by coating and drying the aforementioned conductive film coating composition and protective layer coating composition simultaneously or sequentially, and a transparent conductive film made of the same.

背景技術 Background technique

透明電極係意味藉由物理化學之方法使原子、分子或離子凝結在透明之玻璃基板或薄高分子基板上,且在可見光區域(380~780nm波長)為透明,且導電度大之電極。更詳而言之,透明電極係意味透光度大約80%以上,且表面電阻500Ω/□以下之薄膜。 The transparent electrode means an electrode that condenses atoms, molecules, or ions on a transparent glass substrate or a thin polymer substrate by a method of physical chemistry, is transparent in the visible light region (380 ~ 780nm wavelength), and has high conductivity. More specifically, a transparent electrode means a thin film having a light transmittance of about 80% or more and a surface resistance of 500Ω / □ or less.

為使用於透明電極之材料,需要具有優異光學 特性及蝕刻特性之材料。到目前為止所開發之材料廣泛地使用顯示最優異物性之ITO(銦錫氧化物)。但是,ITO係以高價之稀有金屬之銦為主成分,因此需要欲取代ITO之透明電極材料。 For materials used in transparent electrodes, excellent optics are required Material with characteristics and etching characteristics. ITO (indium tin oxide) which exhibits the most excellent physical properties has been widely used for the materials developed so far. However, ITO is based on indium, which is a rare metal with a high price, and therefore it is necessary to replace ITO as a transparent electrode material.

因此,有人嘗試濺鍍金、銀、銅等之金屬且形 成薄的薄膜並作為透明電極使用,雖然該透明電極之導電度佳,但是有可見光區域之透光度下降,且與下部基板之接著力不佳之問題。 Therefore, some people have tried to sputter gold, silver, copper, etc. The thin film is used as a transparent electrode. Although the conductivity of the transparent electrode is good, there is a problem that the transmittance in the visible light region decreases and the adhesion with the lower substrate is poor.

又,雖然ZnO薄膜係低價之材料,但是導電性 比ITO低,且有於SnO2中添加少量Sb之ATO薄膜無法蝕刻且燒成溫度高之問題。 In addition, although the ZnO thin film is a low-cost material, it has lower electrical conductivity than ITO, and there are problems that the ATO thin film in which a small amount of Sb is added to SnO 2 cannot be etched and the firing temperature is high.

又,亦有人使用溶膠-凝膠(Sol-Gel)合成而形成 氧化膜之方法,但是仍然有導電性低,且需要燒成溫度超過350℃之高溫步驟的問題。 It is also formed by Sol-Gel synthesis. The method of oxidizing the film, however, still has the problems of low conductivity and requiring a high temperature step with a firing temperature exceeding 350 ° C.

又,雖然亦有將ZnO、ITO、IZO等之氧化物製 造成奈米粒子且使用該奈米粒子製造墨水或糊並且製造透明電極之方法,但是有奈米尺寸之氧化物之製造困難且需要250℃以上之比較高溫步驟的問題。 In addition, there are also oxides made of ZnO, ITO, IZO, etc. A method of producing nano particles and using the nano particles to produce an ink or a paste and to produce a transparent electrode has problems in that the production of nano-sized oxides is difficult and a relatively high temperature step of 250 ° C or higher is required.

因此,最近有人嘗試將金屬奈米線使用於透明 電極。 Therefore, there have been recent attempts to use metallic nanowires for transparency electrode.

藉由透明電極用導電性墨水形成透明電極時緻 密地形成金屬奈米線且具有確保導電性之功能。金屬奈米線網絡越緻密地形成透明電極之導電度越高,但是有可見光透射率下降且費用增加之問題。又,即使藉由金屬奈米 線形成導電性網絡亦不僅必須產生網絡之斷線,而且網絡間之間隔空間沒有導電性而成為非導體區域留下。又,金屬奈米線作成奈米構造體且活性比現有物質強並且在沒有保護層之情形下露出於大氣時,氧化及腐蝕傾向強。金屬奈米線特別具有高導電性且在可見光區域是透明的,但是電阻因在大氣中氧化及腐蝕上升大約15至20%左右是習知的,且有為防止這情形必須使用另外之抗氧化劑或多數保護層的問題。因此,亦有濕式蝕刻困難,且使用高價雷射,並且這有製程困難且產率低之問題。 When a transparent electrode is formed by a conductive ink for a transparent electrode Metal nanowires are densely formed and have a function of ensuring conductivity. The denser the metal nanowire network is, the higher the conductivity is to form the transparent electrode, but there are problems that the visible light transmittance decreases and the cost increases. Also, even with metallic nano Lines forming a conductive network must not only cause disconnection of the network, but the space between the networks is not conductive and remains as a non-conductive area. In addition, when metal nanowires are nanostructures, they are more active than existing materials, and when exposed to the atmosphere without a protective layer, they have a strong tendency to oxidize and corrode. Metal nanowires are particularly highly conductive and transparent in the visible light region, but it is known that the resistance rises by about 15 to 20% due to oxidation and corrosion in the atmosphere, and another antioxidant must be used to prevent this Or most protective layers. Therefore, there are also difficulties in wet etching and the use of high-priced lasers, and this has the problems of difficult process and low yield.

又,使用多數保護層時,具有與其說使用金屬 奈米線之透明導電性薄膜之步驟變複雜,不如說製品品質及產率比ITO薄膜低且作為商業用途使用困難之問題。因此,相較於如此之多層保護膜,藉由單層或多數層確保硬度、接著力及蝕刻特性是重要的課題。 In addition, when using a large number of protective layers, it is not necessary to use metal The process of the transparent conductive film of nanowires becomes complicated. It is better to say that the product quality and yield are lower than that of ITO film and it is difficult to use it for commercial purposes. Therefore, compared with such a multilayer protective film, securing the hardness, adhesion, and etching characteristics with a single layer or a plurality of layers is an important issue.

因此,經最佳化之電氣特性、光學特性及藉酸 之蝕刻對透明導電性膜之品質及製造程序不會產生直接之影響。 Therefore, optimized electrical, optical, and acid properties The etching does not directly affect the quality and manufacturing process of the transparent conductive film.

美國專利7,585,349號揭露使用銀奈米線之透明 導電性膜,且基材物質,即基質採用大部份表面具有若干導電性之聚丙烯酸酯等之有機黏結劑樹脂成分並且進行銀奈米線塗布。採用如此之基材物質時,可實現光學特性及電氣特性,但是藉酸之蝕刻困難且透明導電性膜製造之程序變複雜並且品質下降。 U.S. Patent No. 7,585,349 discloses transparency using silver nanowires Conductive film, and the substrate material, that is, the substrate uses a large amount of conductive organic resin resin components such as polyacrylate, and is coated with silver nanowires. When such a substrate material is used, optical characteristics and electrical characteristics can be realized, but etching with an acid is difficult, and a procedure for manufacturing a transparent conductive film becomes complicated and the quality deteriorates.

在此,基材物質之功能作為銀奈米線之保護 層,且意味提供接著力使銀奈米線不會由基材剝離之物質並且容易蝕刻保護層才能不容易蝕刻存在於下部層或同一層之銀奈米線。 Here, the function of the substrate material is to protect the silver nanowire Layer, and means to provide a substance that prevents the silver nanowires from peeling off the substrate and easily etch the protective layer so that the silver nanowires existing in the lower layer or the same layer cannot be easily etched.

發明概要 Summary of invention

為解決如前述之問題,本發明之目的在於提供一種使用透明之金屬氧化物基板之溶膠(Sol)作為金屬奈米線之基材物質且具有電氣特性及光學特性同時可透過酸容易地蝕刻的透明導電性膜塗布組成物。 In order to solve the aforementioned problems, an object of the present invention is to provide a sol (Sol) using a transparent metal oxide substrate as a base material of metal nanowires, which has electrical characteristics and optical characteristics and can be easily etched by an acid. A transparent conductive film coating composition.

又,本發明之目的在於提供一種使用前述塗布組成物製造透明導電性膜之方法及由其製造之透明導電性膜。 It is another object of the present invention to provide a method for producing a transparent conductive film using the coating composition and a transparent conductive film produced therefrom.

為達成前述目的,本發明提供一透明導電性膜塗布組成物,其特徵在於含有:1)包含金屬奈米線及分散液之1次導電性膜塗布組成物;及2)包含選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上之溶膠的保護層塗布組成物。 In order to achieve the foregoing object, the present invention provides a transparent conductive film coating composition, comprising: 1) a primary conductive film coating composition including a metal nanowire and a dispersion liquid; and 2) including a component selected from the group consisting of A protective layer coating composition of one or more sols in a group consisting of a magnesium fluoride sol, an inorganic sol, an inorganic-inorganic composite sol, and an organic-inorganic composite sol.

又,本發明提供一種在基板上使用1次導電性膜塗布組成物及前述保護層塗布組成物之透明導電性膜之製 造方法。 The present invention also provides a method for producing a transparent conductive film using a primary conductive film coating composition and the protective layer coating composition on a substrate. 造 方法。 Manufacturing method.

又,本發明提供一種藉由透明導電性膜之製造方法製造之透明導電性膜。 The present invention also provides a transparent conductive film manufactured by a method for manufacturing a transparent conductive film.

使用本發明之塗布組成物製造之透明導電性膜包含金屬奈米線,且包含透明金屬氧化物基板之選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上之溶膠作為其基材物質,並且不僅具有優異表面電阻、耐環境性、全透光性及霧度之特性,且在濕式蝕刻程序中亦可輕易地蝕刻並且折射率容易調節,又,透過濃度調節可實現大範圍之透明導電性膜,因此可有用地用於液晶顯示裝置、電漿顯示裝置、觸控面板、電場發光裝置、薄膜太陽電池、染料敏化太陽電池、無機物結晶質太陽電池等之電極。 The transparent conductive film manufactured by using the coating composition of the present invention includes metal nanowires, and includes a transparent metal oxide substrate selected from the group consisting of magnesium fluoride sol, inorganic sol, inorganic-inorganic composite sol, and organic-inorganic composite sol. One or more sols in the group as its base material, which not only has excellent surface resistance, environmental resistance, full light transmission, and haze, but also can be easily etched in the wet etching process and The refractive index is easy to adjust, and a wide range of transparent conductive films can be realized through concentration adjustment. Therefore, it can be usefully used in liquid crystal display devices, plasma display devices, touch panels, electric field light emitting devices, thin-film solar cells, and dye sensitization Electrodes for solar cells, inorganic crystalline solar cells, etc.

11‧‧‧基板 11‧‧‧ substrate

12‧‧‧導電性膜 12‧‧‧ conductive film

13,15‧‧‧1次保護層 13,15‧‧‧1 protective layer

14,16‧‧‧2次保護層 14,16‧‧‧2 times protective layer

17‧‧‧3次保護層 17‧‧‧3 times protective layer

18‧‧‧透明導電性膜 18‧‧‧ transparent conductive film

圖1係藉由本發明製造之透明導電性膜之濕式蝕刻處理前之光學顯微鏡照片。 FIG. 1 is an optical microscope photograph of a transparent conductive film manufactured by the present invention before a wet etching process.

圖2係藉由本發明製造之透明導電性膜之濕式蝕刻處理後之光學顯微鏡照片。 FIG. 2 is a photomicrograph of a transparent conductive film produced by the present invention after wet etching.

圖3係本發明一實施例之積層構造。 FIG. 3 is a laminated structure according to an embodiment of the present invention.

圖4係本發明另一實施例之積層構造。 FIG. 4 is a laminated structure according to another embodiment of the present invention.

圖5係本發明另一實施例之積層構造。 FIG. 5 shows a laminated structure according to another embodiment of the present invention.

圖6係本發明另一實施例之積層構造。 FIG. 6 is a laminated structure according to another embodiment of the present invention.

圖7係本發明另一實施例之積層構造。 FIG. 7 shows a laminated structure according to another embodiment of the present invention.

用以實施發明之形態 Forms used to implement the invention

本發明之透明導電性膜塗布組成物之特徵在於使用金屬氧化物基板之選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上之溶膠作為金屬奈米線之基材物質,具體而言,特徵在於包含:1)包含金屬奈米線及分散液之1次導電性膜塗布組成物;及2)包含選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上之溶膠的保護層塗布組成物。 The transparent conductive film coating composition of the present invention is characterized by using one or more members selected from the group consisting of a magnesium fluoride sol, an inorganic sol, an inorganic-inorganic composite sol, and an organic-inorganic composite sol using a metal oxide substrate. The sol as a base material of the metal nanowires is specifically characterized by: 1) a primary conductive film coating composition including metal nanowires and a dispersion liquid; and 2) selected from the group consisting of fluorinated A protective layer coating composition of one or more sols in a group consisting of a magnesium sol, an inorganic sol, an inorganic-inorganic composite sol, and an organic-inorganic composite sol.

以下,詳細說明本發明。 Hereinafter, the present invention will be described in detail.

1.1次導電性膜塗布組成物 1.1 conductive film coating composition

a)金屬奈米線 a) Metal nanowire

本發明使用金屬奈米線作為1次導電性膜塗布組成物之導電性物質。 In the present invention, a metal nanowire is used as the conductive substance of the primary conductive film coating composition.

在本發明中可使用之金屬沒有特別限制,但是較佳地可使用選自於由金、銀、銅、鋁、鎳、錫、鈀、鉑、鋅、鐵、銦、鎂等之I族、IIA族、IIIA族、IVA族、及VIIIB族構成之群組之1種以上的金屬,更佳地可使用選自於由鋅、鋁、銅、銀及金構成之群組之1種以上的金屬。 The metal usable in the present invention is not particularly limited, but preferably selected from Group I, consisting of gold, silver, copper, aluminum, nickel, tin, palladium, platinum, zinc, iron, indium, magnesium, etc. One or more metals selected from the group consisting of IIA, IIIA, IVA, and VIIIB, and more preferably one or more metals selected from the group consisting of zinc, aluminum, copper, silver, and gold metal.

前述金屬奈米線之直徑宜為15nm至120nm,長度為5μm至60μm,且較佳地可相對於以下所述之分散液任意地調節濃度使用,且使用0.05至0.5重量%之量。 The diameter of the aforementioned metal nanowires is preferably 15 nm to 120 nm, and the length is 5 μm to 60 μm. Preferably, the concentration can be adjusted arbitrarily with respect to the dispersion liquid described below, and an amount of 0.05 to 0.5% by weight is used.

b)分散液 b) dispersion

前述分散液可考慮金屬奈米線之黏度調節、平滑 之薄膜形成、金屬奈米線之分散液、選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上之溶膠的混合性而適當地選定。 The dispersion can be adjusted and smoothed by considering the viscosity of the metal nanowires Film formation, dispersion of metal nanowires, and the compatibility of one or more sols selected from the group consisting of magnesium fluoride sol, inorganic sol, inorganic-inorganic composite sol, and organic-inorganic composite sol Land selection.

例如,前述溶膠可使用選自於由水、甲醇、乙 醇、丙醇、異丙醇、乙酸異丙酯、丁醇、2-丁醇、辛醇、2-乙基己醇、戊醇、苄基醇、己醇、2-己醇、環己醇、松脂醇、壬醇、甲二醇、乙二醇、二乙二醇、三乙二醇、四乙二醇、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、三乙二醇單甲醚、三乙二醇單乙醚、三乙二醇單丁醚、2-丙酮、二乙醯、乙醯丙酮、1,2-二乙醯乙烷、二甲基碳酸酯、二乙基碳酸酯、丙二醇甲基醚乙酸酯、乙酸2-甲氧基乙酯、丙二醇單甲醚、N-甲基-2-吡咯啶酮、N-甲基乙醯胺及其混合物構成之群組之1種以上之溶劑,較佳地,可單獨使用乙醇、異丙醇或含有乙醇、異丙醇之混合溶劑。 For example, the aforementioned sol can be selected from the group consisting of water, methanol, and ethyl acetate. Alcohol, propanol, isopropanol, isopropyl acetate, butanol, 2-butanol, octanol, 2-ethylhexanol, pentanol, benzyl alcohol, hexanol, 2-hexanol, cyclohexanol , Terpineol, nonanol, methyl glycol, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, Diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 2-acetone, Diethylpyrene, ethylacetone, 1,2-diethylpyrene, dimethyl carbonate, diethyl carbonate, propylene glycol methyl ether acetate, 2-methoxyethyl acetate, propylene glycol monomethyl Ether, N-methyl-2-pyrrolidone, N-methylacetamidine, and mixtures of one or more solvents thereof. Preferably, ethanol, isopropanol, or alcohol-containing, A mixed solvent of isopropyl alcohol.

又,在前述分散液中可更包含有機黏結劑樹脂。 添加前述有機黏結劑樹脂時,可調節分散液之黏度且金屬奈米線分散液之塗布性,並且增加與基板之附著力,進一步增加薄膜之柔軟性。 The dispersion liquid may further contain an organic binder resin. When the aforementioned organic binder resin is added, the viscosity of the dispersion liquid and the applicability of the metal nanowire dispersion liquid can be adjusted, and the adhesion to the substrate can be increased to further increase the flexibility of the film.

前述有機黏結劑樹脂可使用聚醯亞胺、丙烯酸聚 合物、環氧樹脂、聚乙二醇、聚酯、聚甲基丙烯酸甲酯、聚乙烯基吡咯啶酮、纖維素、聚乙烯醇、聚胺基甲酸酯、聚丙烯腈等,且在纖維素樹脂中,亦可使用羥丙基甲基纖 維素、羥乙基纖維素、羥丙基纖維素、甲基纖維素、羧甲基纖維素等。較佳地,前述有機黏結劑樹脂之重量平均分子量係10,000至2,000,000。 The organic binder resin may be polyimide or acrylic polymer. Polymer, epoxy resin, polyethylene glycol, polyester, polymethyl methacrylate, polyvinyl pyrrolidone, cellulose, polyvinyl alcohol, polyurethane, polyacrylonitrile, etc. Hydroxypropyl methylcellulose Vitamins, hydroxyethyl cellulose, hydroxypropyl cellulose, methyl cellulose, carboxymethyl cellulose and the like. Preferably, the weight average molecular weight of the organic binder resin is 10,000 to 2,000,000.

前述有機黏結劑樹脂宜於塗布組成物中使用 0.02至3重量%。在前述範圍內時,可同時地確保塗布液之黏度調節、塗布性提高、與基板之附著力增加、賦予柔軟性、透明導電性膜彎曲一定以上時防止金屬奈米線由基板脫離、透過塗布之均一性形成具有優異導電性之膜、優異之透明導電性膜之接觸電阻、優異之光學特性。前述有機黏結劑樹脂之含量過多時,塗膜之厚度會過厚,因此膜全體會帶有黃色而對觀看性造成不良影響。 The aforementioned organic binder resin is suitable for use in a coating composition 0.02 to 3% by weight. When it is within the aforementioned range, it is possible to simultaneously ensure the viscosity adjustment of the coating liquid, increase the coating property, increase the adhesion to the substrate, impart flexibility, and prevent the transparent metal film from detaching from the substrate when the bending is more than a certain amount. The uniformity forms a film having excellent conductivity, excellent contact resistance of a transparent conductive film, and excellent optical characteristics. When the content of the organic binder resin is too large, the thickness of the coating film may be too thick, and therefore the entire film may be yellowed, which may adversely affect the visibility.

2.保護層塗布組成物 2. Protective coating composition

在本發明中,保護層塗布組成物係使用選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及有機-無機複合溶膠構成之群組之1種以上的溶膠作為保護金屬奈米線且用以透過調節折射率改善觀看性之基材物質。 In the present invention, the protective layer coating composition uses as the protective metal nanometer one or more sols selected from the group consisting of a magnesium fluoride sol, an inorganic sol, an inorganic-inorganic composite sol, and an organic-inorganic composite sol. Substrate material that is used to improve the visibility by adjusting the refractive index.

a)氟化鎂溶膠 a) Magnesium fluoride sol

前述氟化鎂溶膠可於溶劑中混合鎂化合物及氟化合物且使其反應來製造。鎂化合物之具體例可使用氫氧化鎂、氧化鎂、甲氧化鎂、乙氧化鎂、乙酸鎂、磺酸鎂、硝酸鎂等,且氟化合物可使用用三氟乙酸、氟酸、氟化銨、氟化磷等。溶劑可使用選自於由水、甲醇、乙醇、丙醇、異丙醇、乙酸異丙酯、丁醇、2-丁醇、辛醇、2-乙基己醇、戊醇、苄基醇、己醇、2-己醇、環己醇、松脂醇、壬醇、 甲二醇、乙二醇、二乙二醇、三乙二醇、四乙二醇、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、三乙二醇單甲醚、三乙二醇單乙醚、三乙二醇單丁醚、2-丙酮、二乙醯、1,2-二乙醯乙烷、乙酸2-甲氧基乙酯、丙二醇單甲醚及其混合物構成之群組之1種以上之溶劑,較佳地,可單獨使用甲醇或含有甲醇之混合溶劑。 The magnesium fluoride sol can be produced by mixing and reacting a magnesium compound and a fluorine compound in a solvent. Specific examples of the magnesium compound include magnesium hydroxide, magnesium oxide, magnesium methoxide, magnesium ethoxide, magnesium acetate, magnesium sulfonate, magnesium nitrate, and the like, and the fluorine compound includes trifluoroacetic acid, fluoric acid, ammonium fluoride, Phosphorus fluoride and so on. The solvent can be selected from the group consisting of water, methanol, ethanol, propanol, isopropanol, isopropyl acetate, butanol, 2-butanol, octanol, 2-ethylhexanol, pentanol, benzyl alcohol, Hexanol, 2-hexanol, cyclohexanol, pinoresinol, nonanol, Methylene glycol, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether , Diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 2-acetone, diethylhydrazone, 1,2 -One or more solvents of a group consisting of diethylammonium ethane, 2-methoxyethyl acetate, propylene glycol monomethyl ether, and mixtures thereof. Preferably, methanol or a mixed solvent containing methanol may be used alone.

b)無機溶膠 b) inorganic sol

前述無機溶膠可使用金屬氧化物溶膠,且金屬氧化物,例如,可使用選自於由ZnO、TiO2、Al2O3、MgO、Al(OH)2、SiO2及Si(OH)2構成之群組之1種以上者,且可一起使用聚矽氧烷、聚二甲基矽氧烷、聚矽氮烷、聚矽倍半氧烷、多面體寡聚矽倍半氧烷(POSS)等。前述金屬氧化物之折射率宜為1.3至2.0。 The inorganic sol may be a metal oxide sol, and a metal oxide may be selected from the group consisting of ZnO, TiO 2 , Al 2 O 3 , MgO, Al (OH) 2 , SiO 2 and Si (OH) 2 . One or more of these groups, and polysiloxane, polydimethylsiloxane, polysilazane, polysilsesquioxane, polyhedral oligosilsesquioxane (POSS), etc. can be used together . The refractive index of the aforementioned metal oxide is preferably 1.3 to 2.0.

為合成金屬氧化物所使用之金屬前驅物可多樣地選擇,更具體而言,為合成Al2O3或Al(OH)2金屬氧化物溶膠,可使用乙酸鋁、乙醯丙酮鋁、乙基乙醯丙酮鋁、甲基乙醯丙酮鋁、異丙氧化鋁等;為合成ZnO金屬氧化物溶膠,可使用乙酸鋅、乙醯丙酮鋅等;為合成MgO金屬氧化物溶膠,可使用乙酸鎂、甲氧化鎂、乙氧化鎂等;為合成TiO2金屬氧化物溶膠,可使用乙酸鈦、乙醯丙酮鈦、異丙氧化鈦等;為合成SiO2金屬氧化物溶膠,可使用四原矽酸乙酯(TEOS)、四甲氧矽烷(TMOS)、四乙氧乙矽烷(TEES)、1,2-雙(三乙氧矽基)乙烷(BTSE)等。 There are various choices of metal precursors used for the synthesis of metal oxides. More specifically, for the synthesis of Al 2 O 3 or Al (OH) 2 metal oxide sols, aluminum acetate, aluminum acetone, ethyl Acetyl aluminum acetone, methyl ethyl acetone aluminum, isopropyl aluminum oxide, etc .; To synthesize ZnO metal oxide sol, zinc acetate, zinc acetoacetone, etc. can be used; for synthesizing MgO metal oxide sol, magnesium acetate, For the synthesis of TiO 2 metal oxide sol, titanium acetate, titanium acetoacetate, titanium isopropoxide, etc. can be used for synthesis; for the synthesis of SiO 2 metal oxide sol, ethyl tetraorthosilicate can be used. Esters (TEOS), tetramethoxysilane (TMOS), tetraethoxyethilanes (TEES), 1,2-bis (triethoxysilyl) ethane (BTSE), etc.

無機溶膠所使用之溶劑可使用前述氟化鎂溶膠所使用之溶劑。 The solvent used for the inorganic sol may be the solvent used for the aforementioned magnesium fluoride sol.

c)無機-無機複合溶膠 c) Inorganic-inorganic composite sol

前述無機-無機複合溶膠係可在混合前述氟化鎂溶膠及無機溶膠所使用之1種以上之金屬氧化物後,透過溶膠-凝膠合成而形成。混合比率可任意地調節。例如,為製造ZnO-MgF2複合溶膠,可在ZnO溶膠合成時添加已合成之MgF2溶膠,或以一定比率混合分別合成之溶膠使用。 The inorganic-inorganic composite sol can be formed by sol-gel synthesis after mixing the magnesium fluoride sol and one or more metal oxides used in the inorganic sol. The mixing ratio can be adjusted arbitrarily. For example, for the manufacture of ZnO-MgF 2 composite sol, may be added to the synthesized ZnO MgF 2 sol when the sol synthesized, or synthesized separately mixed in a ratio of the sol used.

前述無機-無機複合溶膠可容易地調節導電性膜與基板之折射率。 The inorganic-inorganic composite sol can easily adjust the refractive indices of the conductive film and the substrate.

無機-無機複合溶膠所使用之溶劑可使用前述氟化鎂溶膠所使用之溶劑。 As the solvent used for the inorganic-inorganic composite sol, the solvent used for the aforementioned magnesium fluoride sol can be used.

d)有機-無機複合溶膠 d) Organic-inorganic composite sol

前述有機-無機複合溶膠可導入有機黏結劑於由前述氟化鎂溶膠、無機溶膠、無機-無機複合溶膠構成之1種以上之金屬氧化物溶膠中使保護層柔軟性增加或追加地調節導電性膜之折射率。 The organic-inorganic composite sol can be introduced with an organic binder into one or more metal oxide sols composed of the magnesium fluoride sol, inorganic sol, and inorganic-inorganic composite sol to increase the flexibility of the protective layer or adjust the conductivity of the protective layer. The refractive index of the film.

前述有機黏結劑樹脂可使用聚醯亞胺、丙烯酸聚合物、環氧樹脂、聚乙二醇、聚酯、聚甲基丙烯酸甲酯、聚乙烯基吡咯啶酮、纖維素、聚乙烯醇、聚胺基甲酸酯、聚丙烯腈等,且在纖維素樹脂中,亦可使用羥丙基甲基纖維素、羥乙基纖維素、羥丙基纖維素、甲基纖維素、羧甲基纖維素等。較佳地,前述有機黏結劑樹脂之重量平均分子量係10,000至2,000,000。 The organic binder resin may be polyimide, acrylic polymer, epoxy resin, polyethylene glycol, polyester, polymethyl methacrylate, polyvinylpyrrolidone, cellulose, polyvinyl alcohol, or polymer. Urethane, polyacrylonitrile, etc., and in the cellulose resin, hydroxypropyl methyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, methyl cellulose, carboxymethyl fiber can also be used Su et al. Preferably, the weight average molecular weight of the organic binder resin is 10,000 to 2,000,000.

前述有機黏結劑樹脂宜相對於溶膠使用0.05至5 重量%之量。在前述範圍內時,可同時地確保折射率及軟性確保、耐環境性提高、蝕刻後觀看性改善、及透明導電膜之良好接觸電阻。 The aforementioned organic binder resin is preferably used in an amount of 0.05 to 5 relative to the sol. Amount by weight. When it is within the aforementioned range, it is possible to simultaneously ensure refractive index and softness assurance, improve environmental resistance, improve viewing after etching, and good contact resistance of a transparent conductive film.

無機-有機複合溶膠所使用之溶劑可使用前述氟 化鎂溶膠所使用之溶劑。 The solvent used in the inorganic-organic composite sol can use the aforementioned fluorine Solvent used in magnesium sol.

在本發明中藉由前述保護層塗布組成物可任意 適當地調節氟化鎂溶膠、無機溶膠、無機-無機複合溶膠、及有機-無機複合溶膠之含量,可較佳地使用0.1至15重量%,更佳地1至10重量%。在前述範圍內時,具有所製造之導電性膜之電氣特性及光學特性,同時可透過酸容易地蝕刻。 In the present invention, the coating composition may be arbitrarily formed by the aforementioned protective layer. The content of the magnesium fluoride sol, the inorganic sol, the inorganic-inorganic composite sol, and the organic-inorganic composite sol is appropriately adjusted, and it may be preferably used in an amount of 0.1 to 15% by weight, more preferably 1 to 10% by weight. When it is within the aforementioned range, it has the electrical characteristics and optical characteristics of the manufactured conductive film, and can be easily etched through an acid.

在本發明中前述保護層塗布組成物可依需要包 含所屬技術領域中通常使用之添加劑。 In the present invention, the aforementioned protective layer coating composition may be packaged as required. Contains additives commonly used in the art.

較佳地,前述保護層塗布組成物亦可包含氟化 鎂溶膠。此時,可單獨包含氟化鎂溶膠,或於無機-無機複合溶膠或無機-有機複合溶膠中使用氟化鎂溶膠。使用氟化鎂溶膠時,電氣特性及蝕刻特性特別優異。 Preferably, the protective layer coating composition may further include fluorination. Magnesium sol. In this case, the magnesium fluoride sol may be contained alone, or the magnesium fluoride sol may be used in an inorganic-inorganic composite sol or an inorganic-organic composite sol. When a magnesium fluoride sol is used, it is particularly excellent in electrical characteristics and etching characteristics.

在本發明中,前述1次導電性膜塗布組成物及保 護層塗布組成物可混合使用;或可在金屬奈米線導電性膜之下部或上部以單一層或2以上多數層之方式形成保護層,前述溶膠亦可單獨形成保護層或混合2種以上形成保護層。特別在導電性膜之上部具有保護層時,由於可進行濕式蝕刻,故可進一步謀求在後續步驟之便宜性。 In the present invention, the aforementioned conductive film coating composition and The coating composition of the protective layer can be used in combination; or a protective layer can be formed as a single layer or two or more layers on the lower or upper part of the metal nanowire conductive film. The aforementioned sol can also form a protective layer alone or mix two or more types. Form a protective layer. In particular, when a protective layer is provided on the upper portion of the conductive film, wet etching can be performed, so that the subsequent step can be further inexpensive.

又,本發明提供在基板上使用前述1次導電性膜 塗布組成物及前述保護層塗布組成物之透明導電性膜之製造方法及藉由前述方法製造之透明導電性膜。 The present invention also provides the use of the aforementioned primary conductive film on a substrate. The manufacturing method of the transparent conductive film of a coating composition and the said protective layer coating composition, and the transparent conductive film manufactured by the said method.

在本發中,透明導電性膜之製造包含:使在選自於由氟化鎂溶膠、無機溶膠、無機-無機複合溶膠及無機-有機複合溶膠構成之群組之1種以上之溶膠的保護層塗布組成物中包含金屬奈米線及分散液的1次導電性膜塗布組成物分散的單液型組成物塗布在基板上後乾燥的步驟,或可包含形成在基板上分別依序塗布前述1次導電性膜塗布組成物及前述保護層塗布組成物且乾燥之多層膜的步驟。 In the present invention, the production of the transparent conductive film includes protection of one or more sols selected from the group consisting of a magnesium fluoride sol, an inorganic sol, an inorganic-inorganic composite sol, and an inorganic-organic composite sol. The single-coat type composition in which the conductive film coating composition containing the metal nanowires and the dispersion liquid in the layer coating composition is dispersed once is coated on the substrate and then dried, or may include the steps of sequentially forming the coating on the substrate and sequentially coating the foregoing. A step of drying the conductive film coating composition and the protective layer coating composition and drying the multilayer film once.

較佳地,透過多層膜形成透明導電性膜之方法不會對金屬奈米線之接觸電阻造成影響,因此可容易地得到所希望之高傳導度,亦可得到塗布時均一度優異之高傳傳導度、高信賴性透明導電性膜。 Preferably, the method of forming a transparent conductive film through a multilayer film does not affect the contact resistance of the metal nanowires, so that the desired high conductivity can be easily obtained, and high transmission with excellent uniformity during coating can also be obtained. Conductive, highly reliable transparent conductive film.

藉由前述形成多層膜可如圖3至6所記載地在基板與導電性膜之間形成1層以上之保護層,且可在導電性膜之上部形成1層以上之保護層。較佳地,前述保護層中之至少一保護層可使用氟化鎂溶膠形成,更佳地,可使用氟化鎂溶膠在導電性膜正上方之上部形成保護層。此時,可進一步提高透明導電性膜之電氣特性、光學特性及蝕刻特性。在本發明中特別顯示電氣特性比單獨使用透明導電性膜時減少表面電阻30至70%。這是因為保護層形成在導電性膜上時保護層物質收縮而使形成導電性膜之金屬奈 米線間的接觸增加且使接觸電阻減少。又,與保護層一起使用時,顯示比單獨使用導電性膜時全透光度增加0.5至5%,霧度(Haze,濁度)減少2至50%之效果。這是起因於保護層組成物產生之折射率調節效果。為顯示如此之效果,本發明之保護層宜形成最終形成之保護層厚度為10至500nm之厚度。如果脫離前述範圍而以小於10nm之厚度形成保護層,未充分覆蓋導電性膜且一部份導電性膜露出,若如此則無法得到表面電阻減少、全透光度上升、霧度減少之效果。與此相反,如果超過500nm形成保護層,則沒有保護層之表面電阻減少效果,且不會出現透光度增加、霧度減少現象。 By forming the multilayer film described above, one or more protective layers can be formed between the substrate and the conductive film as described in FIGS. 3 to 6, and one or more protective layers can be formed on the upper portion of the conductive film. Preferably, at least one of the protective layers may be formed using a magnesium fluoride sol. More preferably, a protective layer may be formed on the conductive film directly above the conductive film. In this case, the electrical characteristics, optical characteristics, and etching characteristics of the transparent conductive film can be further improved. In the present invention, it is particularly shown that the electrical characteristics are reduced by 30 to 70% compared to when the transparent conductive film is used alone. This is because when the protective layer is formed on the conductive film, the material of the protective layer shrinks, so that the metallic film forming the conductive film is formed. The contact between the meter lines increases and the contact resistance decreases. In addition, when used with a protective layer, the effect of increasing the total light transmittance by 0.5 to 5% and reducing the haze (haze, haze) by 2 to 50% compared to when the conductive film is used alone. This is due to the refractive index adjustment effect produced by the protective layer composition. In order to show such an effect, the protective layer of the present invention preferably has a thickness of 10 to 500 nm. If the protective layer is formed with a thickness of less than 10 nm out of the foregoing range, the conductive film is not sufficiently covered and a part of the conductive film is exposed. If so, the effects of reducing surface resistance, increasing total light transmittance, and reducing haze cannot be obtained. In contrast, if a protective layer is formed over 500 nm, there is no effect of reducing the surface resistance of the protective layer, and no increase in light transmittance or decrease in haze occurs.

在本發明中,前述塗布及乾燥可使用在所屬技 術領域中通常使用之印刷及乾燥方法,例如,印刷可使用凹版膠版印刷、凹版直接印刷、微凹版印刷、網版印刷、噴墨印刷法、旋塗、縫塗布、狹縫塗布等印刷在通常使用之透明基板,例如,聚醯亞胺(PI)基板、聚對苯二甲酸乙二酯(PET)基板、聚碳酸酯(PC)基板、環烯烴聚合物(COP)基板、聚2,6萘二甲酸乙二酯(PEN)基板等上。又,塗布厚度可依用途適當地調節,舉例而言,可為0.1至100μm之厚度。 In the present invention, the aforementioned coating and drying can be used in the related technology. Printing and drying methods commonly used in the field of surgery, for example, printing can be performed using gravure offset printing, direct gravure printing, micro gravure printing, screen printing, inkjet printing, spin coating, slit coating, slit coating, etc. Transparent substrates used, such as polyimide (PI) substrates, polyethylene terephthalate (PET) substrates, polycarbonate (PC) substrates, cycloolefin polymer (COP) substrates, poly2,6 Ethylene naphthalate (PEN) substrate and the like. The coating thickness can be appropriately adjusted depending on the application, and for example, it can be a thickness of 0.1 to 100 μm.

又,在本發明中,為乾燥前述經塗布之膜,可 在低溫進行熱處理。 In the present invention, in order to dry the coated film, the The heat treatment is performed at a low temperature.

大部份之藉由溶膠-凝膠合成所形成之金屬氧 化物為形成為結晶相而在高溫燒成係一般之方法。但是, 在本發明中,如果是使金屬奈米線之附著力提高而作為保護層使用之金屬氧化物,可在小於200℃之溫度進行熱處理,亦可較佳地在60至180℃進行熱處理。如此之金屬氧化物溶膠之低溫熱處理係變換成非結晶相形態之非晶質相或聚合且分子量大之溶膠相而使保護層或附著力增加之效果。 Most metal oxides formed by sol-gel synthesis The compound is generally fired at a high temperature to form a crystalline phase. but, In the present invention, if the metal oxide is used as a protective layer to improve the adhesion of the metal nanowires, the heat treatment may be performed at a temperature of less than 200 ° C, or preferably 60 to 180 ° C. The low-temperature heat treatment of such a metal oxide sol is an effect of transforming the amorphous phase into an amorphous phase or a polymerized sol phase having a large molecular weight to increase the protective layer or adhesion.

又,在只在400℃以上之溫度結晶相增加之金屬 氧化物的特性方面,在高溫之燒成無法進行後續程序之蝕刻的可能性大,因此在本發明中寧可更佳的是非結晶相之非晶質相或分子量大之溶膠相。 In addition, the metal whose crystalline phase increases only at a temperature above 400 ° C In terms of the characteristics of oxides, there is a high possibility that subsequent processes cannot be etched at high temperature firing. Therefore, the amorphous phase or the sol phase with a large molecular weight is preferred in the present invention.

藉由前述方法得到之透明導電性膜可藉由在所 屬技術領域中通常之方法進行光程序及蝕刻程序而形成圖案。 The transparent conductive film obtained by the foregoing method can be obtained by It is common in the technical field to perform a photo process and an etching process to form a pattern.

又,本發明提供藉由前述方法製造之透明導電 性膜。使用本發明之組成物及方法製造之透明導電性膜的透光度係90%以上,且表面電阻係200Ω/□以下,並且不只具有優異表面電阻、耐環境性、全透光度及霧度特性,而且在濕式蝕刻程序中亦可容易地蝕刻且可透過濃度調節實現大範圍之透明導電膜,因此可有用地活用電氣裝置或光學裝置,具體例為有用地活用在液晶顯示裝置、電漿顯示裝置、觸控面板、電場發光裝置、薄膜太陽電池、染料敏化太陽電池、無機物結晶質太陽電池等之電極上。 The present invention also provides a transparent conductive material manufactured by the aforementioned method. Sex film. The transparent conductive film manufactured by using the composition and method of the present invention has a light transmittance of more than 90% and a surface resistance of 200 Ω / □ or less, and has not only excellent surface resistance, environmental resistance, full light transmittance, and haze. Characteristics, and can be easily etched in the wet etching process and can realize a wide range of transparent conductive films through concentration adjustment. Therefore, it is useful to use electrical devices or optical devices. A specific example is to use liquid crystal display devices and electrical devices. Plasma display devices, touch panels, electric field light-emitting devices, thin-film solar cells, dye-sensitized solar cells, and inorganic crystalline solar cells.

在本發明中透光度較佳地係88%、更佳地的是 90%以上,且表面電阻較佳地係150Ω/□以下,更佳的是 100Ω/□以下,最佳的是80Ω/□以下。 The light transmittance in the present invention is preferably 88%, more preferably Above 90%, and the surface resistance is preferably below 150Ω / □, more preferably 100Ω / □ or less, and most preferably 80Ω / □ or less.

以下,為了解本發明提示較佳實施例,但是下 述實施例不過是舉例說明本發明,本發明之範圍不限於下述實施例。 In the following, a preferred embodiment is suggested for understanding the present invention, but the following The embodiments described are merely examples to illustrate the present invention, and the scope of the present invention is not limited to the following examples.

合成例1:SiO2溶膠之合成 Synthesis Example 1: Synthesis of SiO 2 Sol

在分別以2:5:3之比率混合水、乙醇及丙二醇單乙醚之溶劑30g中投入草酸0.5g後,一面由升溫到40至70℃一面攪拌。升溫結束時,添加四原矽酸乙酯(TEOS)0.05莫耳且反應2小時以上而合成SiO2溶膠。 0.5 g of oxalic acid was added to 30 g of a solvent in which water, ethanol and propylene glycol monoethyl ether were mixed at a ratio of 2: 5: 3, and then stirred while heating to 40 to 70 ° C. At the end of the temperature increase, 0.05 mol of tetra-orthosilicate (TEOS) was added and the reaction was carried out for more than 2 hours to synthesize a SiO 2 sol.

合成例2:TiO2溶膠之合成 Synthesis Example 2: Synthesis of TiO 2 Sol

混合四氯化鈦0.005莫耳、苄基醇0.094莫耳及乙醇0.034莫耳後,在70至90℃溫度反應6小時以上且形成白色二氧化鈦粉末。一面以二乙醚洗淨前述二氧化鈦粉末一面以離心分離機分離二氧化鈦粉末。以乙醇3g分散處理經分離之二氧化鈦粉末後,與將碳酸銫以0.2重量%溶於2-乙氧乙醇中之溶液3g攪拌且合成TiO2溶膠。 After mixing 0.005 moles of titanium tetrachloride, 0.094 moles of benzyl alcohol, and 0.034 moles of ethanol, the mixture was reacted at a temperature of 70 to 90 ° C. for more than 6 hours to form a white titanium dioxide powder. While the titanium dioxide powder was washed with diethyl ether, the titanium dioxide powder was separated by a centrifuge. After dispersing the separated titanium dioxide powder with 3 g of ethanol, it was stirred with 3 g of a solution of cesium carbonate dissolved in 2-ethoxyethanol at 0.2% by weight to synthesize a TiO 2 sol.

合成例3:MgF2溶膠之合成 Synthesis Example 3: Synthesis of MgF 2 Sol

將甲氧化鎂或乙酸鎂1莫耳溶解於甲醇且攪拌作為鎂前驅物後,為賦予氟離子而以鎂前驅物對比2莫耳之量氟酸或三氟乙酸且在60至90℃之間離散反應12小時後,進行1天以上之老化處理且合成MgF2溶膠。 After dissolving 1 mole of magnesium methoxide or magnesium acetate in methanol and stirring as a magnesium precursor, in order to impart fluoride ions, the amount of magnesium precursor is 2 moles of fluoric acid or trifluoroacetic acid and is between 60 and 90 ° C After 12 hours of discrete reaction, an aging treatment was performed for more than 1 day and a MgF 2 sol was synthesized.

合成例4:ZnO溶膠之合成 Synthesis Example 4: Synthesis of ZnO Sol

添加ZnO粒子0.5莫耳於甲醇及乙醇之5:5混合溶劑作為鋅前驅物後,將溫度升溫至50℃。然後,添加1 莫耳乙醯丙酮、甲基乙醯丙酮或乙基乙醯丙酮且合成ZnO溶膠。 After adding 0.5 mol of ZnO particles to a 5: 5 mixed solvent of methanol and ethanol as a zinc precursor, the temperature was raised to 50 ° C. Then, add 1 Mol acetone, methyl acetone or ethyl acetone and synthesize ZnO sol.

合成例5:Al2O3溶膠之合成 Synthesis Example 5: Synthesis of Al 2 O 3 Sol

添加Al2O3粒子0.5莫耳於甲醇及乙醇之5:5混合溶劑作為鋁前驅物後,將溫度升溫至50℃。然後,添加1莫耳乙醯丙酮、甲基乙醯丙酮或乙基乙醯丙酮且合成Al2O3溶膠。 After adding 0.5 mol of Al 2 O 3 particles in a 5: 5 mixed solvent of methanol and ethanol as an aluminum precursor, the temperature was raised to 50 ° C. Then, 1 mol of acetone, methyl acetone or ethyl acetone was added and an Al 2 O 3 sol was synthesized.

[實施例1至20] [Examples 1 to 20]

使用藉由前述合成之溶膠形成如圖3之形態之積層構造。為製造透明導電性膜,基板11使用柔軟之塑膠基板,且使用PET。包含金屬奈米線及分散液之導電性膜12塗布組成物係將銀奈米線以0.1至0.2重量%在乙醇中稀釋且準備。1次保護層15及2次保護層16係藉由前述揭示之溶膠合成法製造,且在溶膠合成中添加羥丙基纖維素0.5g後透過相同之過程完成有機-無機複合溶膠,並且將準備好之有機-無機複合溶膠以7重量%在乙醇中稀釋而準備保護層塗布組成物。又,無機-無機複合溶膠係以1:1重量比混合藉由所揭示之溶膠合成法製造之溶膠來製造。 A laminated structure of the form shown in FIG. 3 was formed using the sol synthesized as described above. In order to manufacture a transparent conductive film, a flexible plastic substrate is used for the substrate 11 and PET is used. The conductive film 12 coating composition containing a metal nanowire and a dispersion liquid is prepared by diluting a silver nanowire in ethanol at 0.1 to 0.2% by weight. The primary protective layer 15 and the secondary protective layer 16 are manufactured by the sol synthesis method disclosed above, and after adding 0.5 g of hydroxypropyl cellulose to the sol synthesis, the organic-inorganic composite sol is completed through the same process, and will be prepared A good organic-inorganic composite sol was diluted at 7% by weight in ethanol to prepare a protective layer coating composition. In addition, the inorganic-inorganic composite sol is produced by mixing the sol produced by the disclosed sol synthesis method in a 1: 1 weight ratio.

金屬奈米線導電性膜係透過狹縫塗布或微凹版塗布、凹版塗布、桿塗布等進行塗布使塗布厚度為18至25μm,且藉由對流平順之100至130℃烘箱乾燥。 The metal nanowire conductive film is coated by slit coating or microgravure coating, gravure coating, rod coating, etc., so that the coating thickness is 18 to 25 μm, and dried in an oven at 100 to 130 ° C. which is smooth by convection.

1於保護層及2次保護層亦同樣地透過金屬奈米線導電性膜之塗布方法塗布使塗布厚度為15至20μm,且藉由1次導電性膜之乾燥方法乾燥。 1 The protective layer and the secondary protective layer are similarly applied through a coating method of a metal nanowire conductive film so as to have a coating thickness of 15 to 20 μm, and dried by a drying method of the primary conductive film.

評價與製造透明導電性膜所使用之1次及2次保 護層塗布組成物一起完成後之透明導電性薄膜之性能且記載於下述表1中,且透過一連串光程序之感光性物質塗布-曝光-顯影-蝕刻程序掌握蝕刻特性。 Primary and secondary guarantees for evaluating and manufacturing transparent conductive films The properties of the transparent conductive film after the protective coating composition is completed are described in Table 1 below, and the etching characteristics are grasped through a series of photo-substance coating-exposure-development-etching procedures.

其他各項目之性能係如下所述地進行。 The performance of each other item is performed as follows.

1)表面電阻:透過表面電阻測量器測量每單位面積之表面電阻。 1) Surface resistance: Measure the surface resistance per unit area through a surface resistance measuring device.

2)耐環境性:在溫度85℃、濕度85%之條件下測量表面電阻不變之時間。 2) Environmental resistance: Measure the time that the surface resistance does not change under the conditions of temperature 85 ° C and humidity 85%.

3)全透光度:在400至800nm波長區域使用光譜光度計測量可見光透光度。 3) Total light transmittance: Measure the visible light transmittance using a spectrophotometer in a wavelength region of 400 to 800 nm.

4)霧度:使用(NIPPON DENSHOKU)公司之濁度計COH400測量。 4) Haze: Measured with a turbidimeter COH400 from (NIPPON DENSHOKU).

5)濕式蝕刻時間:使用過氧化氫、硝酸混合液作為蝕刻液,測量無導電性之時間。 5) Wet etching time: use hydrogen peroxide and nitric acid mixed solution as the etching solution, and measure the time without electrical conductivity.

Figure TWI613683BD00001
Figure TWI613683BD00001

[實施例21至42] [Examples 21 to 42]

使用藉由前述合成之溶膠形成如圖4之形態之積層構造。除了在2次保護層16上追加地形成3次保護層17以外,進行與前述實施例1至20同樣之方法且得到透明導電 性薄膜,並且將物性及性能評價記載於下述表2中。 A layered structure as shown in FIG. 4 was formed using the sol synthesized as described above. Except that the secondary protective layer 17 was additionally formed on the secondary protective layer 16, the same method as in Examples 1 to 20 described above was performed and transparent conductive was obtained. The physical properties and performance evaluations are described in Table 2 below.

Figure TWI613683BD00002
Figure TWI613683BD00002

[實施例43至64] [Examples 43 to 64]

使用藉由前述合成之溶膠形成如圖5之形態之 積層構造。除了在基板11上形成導電性膜12且在該金屬奈米線導電性膜12上形成保護層13以外,進行與前述實施例1至20同樣之方法且得到透明導電性薄膜,並且將物性及性能評價記載於下述表3中。 The sol formed by the aforementioned synthesis is used to form the form shown in FIG. 5. Laminated structure. Except that the conductive film 12 is formed on the substrate 11 and the protective layer 13 is formed on the metallic nanowire conductive film 12, the same method as in the foregoing Examples 1 to 20 is performed to obtain a transparent conductive film, and the physical properties and The performance evaluation is described in Table 3 below.

Figure TWI613683BD00003
Figure TWI613683BD00003

[實施例65至84] [Examples 65 to 84]

使用藉由前述合成之溶膠形成如圖6之形態之積層構造。除了在1次保護層13上追加地形成2次保護層14 以外,進行與前述實施例1至20同樣之方法且得到透明導電性薄膜,並且將物性及性能評價記載於下述表4中。 A laminated structure having the form shown in FIG. 6 was formed using the sol synthesized as described above. In addition to the secondary protective layer 14 being additionally formed on the primary protective layer 13 Other than that, the same method as in Examples 1 to 20 was performed to obtain a transparent conductive film, and the physical properties and performance evaluations are shown in Table 4 below.

Figure TWI613683BD00004
Figure TWI613683BD00004

[實施例85至92] [Examples 85 to 92]

使用藉由前述合成之溶膠形成如圖7之形態之 積層構造。在基板11上藉由單液型金屬奈米線塗布組成物形成透明導電性膜18。 The sol formed by the aforementioned synthesis is used to form the form shown in FIG. Laminated structure. A transparent conductive film 18 is formed on the substrate 11 by coating the composition with a single liquid metal nanowire.

藉由前述揭示之溶膠合成法製造各個溶膠,且 在溶膠合成中添加羥丙基纖維素0.5g後透過相同之過程製造有機-無機複合溶膠。又,無機-無機複合溶膠係以1:1重量比混合藉由所揭示之溶膠合成法製造之溶膠製造之溶膠來製造。各個複合溶膠係在以7重量%添加至銀奈米線以0.1至0.2重量%稀釋之乙醇中後,進行攪拌使溶膠不會凝聚在一起以製造單液型金屬奈米線塗布組成物。對該塗布組成物進行與前述實施例1至20相同之方法得到透明導電性薄膜,且將物性及性能評價記載於下述表5中。 Each sol is manufactured by the sol synthesis method disclosed above, and An organic-inorganic composite sol was produced through the same process after adding 0.5 g of hydroxypropyl cellulose to sol synthesis. In addition, the inorganic-inorganic composite sol is produced by mixing a sol made by the disclosed sol synthesis method by a 1: 1 weight ratio. Each composite sol is added to the silver nanowire at 7% by weight and diluted with 0.1 to 0.2% by weight of ethanol, and then stirred to prevent the sol from agglomerating together to produce a single-liquid metal nanowire coating composition. This coating composition was subjected to the same method as in Examples 1 to 20 to obtain a transparent conductive film, and physical properties and performance evaluations are described in Table 5 below.

[比較例1]使用聚胺基甲酸酯聚合物之多層膜之製造 [Comparative Example 1] Production of a multilayer film using a polyurethane polymer

除了將銀奈米線以0.1至0.2重量%稀釋於水中,同時將聚胺基甲酸酯聚合物以7重量%溶在甲基乙基酮中以作成保護層形成用組成物使用以外,藉由與前述實施例1至20同樣之方法形成多層透明導電性膜,且將物性及性能評價記載於下述表5中。 In addition to diluting silver nanowires in water at 0.1 to 0.2% by weight, and dissolving a polyurethane polymer in methyl ethyl ketone at 7% by weight to form a protective layer-forming composition, A multilayer transparent conductive film was formed by the same method as in Examples 1 to 20, and physical properties and performance evaluations are described in Table 5 below.

[比較例2]使用聚胺基甲酸酯聚合物之單層膜之製造 [Comparative Example 2] Production of a single-layer film using a polyurethane polymer

除了將銀奈米線以0.2至0.4重量%稀釋於水中,同時將聚胺基甲酸酯聚合物以14重量%溶在甲基乙基酮中以製造保護層形成用組成物,且以與銀奈米線分散液1:1之比混合該保護層形成用組成物使用以外,藉由與前述實施例85至92同樣之方法形成單層透明導電性膜,且將物性及性能評價記載於下述表5中。 In addition to diluting silver nanowires in water at 0.2 to 0.4% by weight, and simultaneously dissolving a polyurethane polymer at 14% by weight in methyl ethyl ketone to produce a composition for forming a protective layer, and A single-layer transparent conductive film was formed by the same method as in Examples 85 to 92 except that the composition for forming a protective layer was mixed with a silver nanowire dispersion liquid at a ratio of 1: 1, and physical properties and performance evaluations were described in It is shown in Table 5 below.

Figure TWI613683BD00005
Figure TWI613683BD00005

如前述表1至5所示,本發明之透明導電性膜不只 具有優異表面電阻、耐環境性、全透光度及霧度特性,而且在濕式蝕刻程序中亦可容易地蝕刻,且特別在使用氟化鎂形成另外之保護層時顯示優異之物性。 As shown in the aforementioned Tables 1 to 5, the transparent conductive film of the present invention is not only It has excellent surface resistance, environmental resistance, full light transmittance and haze characteristics, and can be easily etched in wet etching procedures, and especially shows excellent physical properties when using magnesium fluoride to form another protective layer.

11‧‧‧基板 11‧‧‧ substrate

12‧‧‧導電性膜 12‧‧‧ conductive film

15‧‧‧1次保護層 15‧‧‧1 protective layer

16‧‧‧2次保護層 16‧‧‧2 times protective layer

Claims (18)

一種透明導電性膜塗布組成物,其特徵在於含有:1)一1次導電性膜塗布組成物,其包含金屬奈米線及分散液;及2)一保護層塗布組成物,其包含氟化鎂溶膠。 A transparent conductive film coating composition, comprising: 1) a primary conductive film coating composition including metal nanowires and a dispersion liquid; and 2) a protective layer coating composition including fluorinated Magnesium sol. 如請求項1之透明導電性膜塗布組成物,其中前述金屬奈米線係相對於前述分散液使用0.05至0.5重量%之量。 The transparent conductive film coating composition according to claim 1, wherein the aforementioned metal nanowire is used in an amount of 0.05 to 0.5% by weight based on the aforementioned dispersion. 如請求項1之透明導電性膜塗布組成物,其中前述1次導電性膜塗布組成物更包含有機黏結劑。 The transparent conductive film coating composition according to claim 1, wherein the aforementioned first conductive film coating composition further includes an organic binder. 如請求項1之透明導電性膜塗布組成物,其中前述金屬奈米線之金屬係選自於由金、銀、銅、鋁、鎳、錫、鈀、鉑、鋅、鐵、銦及鎂構成之群組之1種以上的金屬。 The transparent conductive film coating composition according to claim 1, wherein the metal of the aforementioned metal nanowire is selected from the group consisting of gold, silver, copper, aluminum, nickel, tin, palladium, platinum, zinc, iron, indium, and magnesium One or more metals in the group. 如請求項1之透明導電性膜塗布組成物,其中前述金屬奈米線之直徑係15nm至120nm,長度為5μm至60μm。 The transparent conductive film coating composition according to claim 1, wherein the diameter of the metal nanowire is 15 nm to 120 nm, and the length is 5 μm to 60 μm. 如請求項1之透明導電性膜塗布組成物,其中前述分散液係選自於由水、甲醇、乙醇、丙醇、異丙醇、乙酸異丙酯、丁醇、2-丁醇、辛醇、2-乙基己醇、戊醇、苄基醇、己醇、2-己醇、環己醇、松脂醇、壬醇、甲二醇、乙二醇、二乙二醇、三乙二醇、四乙二醇、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、三乙二醇單甲醚、三乙二醇單乙醚、三乙二醇單丁醚、2-丙酮、二乙醯、乙醯丙酮、1,2-二乙醯乙烷、二甲基碳酸酯、二乙基碳 酸酯、丙二醇甲基醚乙酸酯、乙酸2-甲氧基乙酯、丙二醇單甲醚、N-甲基-2-吡咯啶酮、N-甲基乙醯胺及其混合物構成之群組之1種以上之溶劑。 The transparent conductive film coating composition according to claim 1, wherein the dispersion is selected from the group consisting of water, methanol, ethanol, propanol, isopropanol, isopropyl acetate, butanol, 2-butanol, and octanol , 2-ethylhexanol, pentanol, benzyl alcohol, hexanol, 2-hexanol, cyclohexanol, pinoresinol, nonanol, methyl glycol, ethylene glycol, diethylene glycol, triethylene glycol , Tetraethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, three Ethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 2-acetone, diethylhydrazone, acetamidine acetone, 1,2-diethylammonium ethane, dimethyl carbonate, Diethyl carbon Group consisting of acid esters, propylene glycol methyl ether acetate, 2-methoxyethyl acetate, propylene glycol monomethyl ether, N-methyl-2-pyrrolidone, N-methylacetamide, and mixtures thereof One or more solvents. 如請求項1之透明導電性膜塗布組成物,其中前述保護層塗布組成物更包含選自於由ZnO、TiO2、MgO、CaF2、Al2O3、Al(OH)2、SiO2及Si(OH)2構成之群組之1種以上者。 The transparent conductive film coating composition according to claim 1, wherein the protective layer coating composition further comprises a material selected from the group consisting of ZnO, TiO 2 , MgO, CaF 2 , Al 2 O 3 , Al (OH) 2 , SiO 2 and One or more of the groups consisting of Si (OH) 2 . 如請求項1之透明導電性膜塗布組成物,其中前述保護層塗布組成物更包含選自於由聚醯亞胺、丙烯酸聚合物、環氧樹脂、聚乙二醇、聚酯、聚甲基丙烯酸甲酯、聚乙烯基吡咯啶酮、纖維素、聚乙烯醇、聚胺基甲酸酯、聚丙烯腈構成之有機黏結劑樹脂群組之1種以上者。 The transparent conductive film coating composition according to claim 1, wherein the protective layer coating composition further comprises a material selected from the group consisting of polyimide, acrylic polymer, epoxy resin, polyethylene glycol, polyester, and polymethyl One or more organic binder resin groups consisting of methyl acrylate, polyvinyl pyrrolidone, cellulose, polyvinyl alcohol, polyurethane, and polyacrylonitrile. 如請求項8之透明導電性膜塗布組成物,其中前述有機黏結劑樹脂係相對於金屬氧化物溶膠使用0.05至5重量%之量。 The transparent conductive film coating composition according to claim 8, wherein the organic binder resin is used in an amount of 0.05 to 5% by weight based on the metal oxide sol. 一種透明導電性膜之製造方法,其特徵在於包含使用如請求項1之保護層塗布組成物及1次導電性膜塗布組成物在基板上塗布後乾燥的步驟。 A method for manufacturing a transparent conductive film, comprising a step of applying a protective layer coating composition as described in claim 1 and a single-time conductive film coating composition on a substrate, followed by drying. 如請求項10之透明導電性膜之製造方法,其包含在使包含金屬奈米線及分散液之1次導電性膜塗布組成物分散於前述保護層塗布組成物的單液型組成物塗布在基板上後乾燥的步驟。 The method for manufacturing a transparent conductive film according to claim 10, comprising coating a single-liquid type composition in which a primary conductive film coating composition including a metal nanowire and a dispersion liquid is dispersed in the protective layer coating composition. Post drying step on the substrate. 如請求項10之透明導電性膜之製造方法,其包含:在基板上塗布前述1次導電性膜塗布組成物後,乾 燥之步驟;及在前述1次導電性膜上塗布如請求項1之保護層塗布組成物後,乾燥之步驟。 The method for manufacturing a transparent conductive film according to claim 10, comprising: coating the aforementioned conductive film coating composition on a substrate; A step of drying; and a step of drying after applying the protective layer coating composition of claim 1 to the aforementioned primary conductive film. 如請求項10之透明導電性膜之製造方法,其包含:在基板上塗布前述保護層塗布組成物後,乾燥之步驟;在前述保護層膜上塗布前述1次導電性膜塗布組成物後,乾燥之步驟;及在前述1次導電性膜上塗布前述保護層塗布組成物後,乾燥之步驟。 The method for manufacturing a transparent conductive film according to claim 10, comprising the steps of: coating the protective layer coating composition on a substrate, and drying; and coating the protective layer film with the conductive film coating composition once, A step of drying; and a step of drying after coating the protective layer coating composition on the primary conductive film. 如請求項10之透明導電性膜之製造方法,其中前述乾燥係在小於200℃之溫度進行熱處理。 The method for manufacturing a transparent conductive film according to claim 10, wherein the drying is heat-treated at a temperature of less than 200 ° C. 如請求項10之透明導電性膜之製造方法,其中前述透明導電性膜之透光度係90%以上。 The method for manufacturing a transparent conductive film according to claim 10, wherein the transmittance of the transparent conductive film is 90% or more. 如請求項10之透明導電性膜之製造方法,其中前述透明導電性膜之表面電阻係100Ω/□以下。 The method for manufacturing a transparent conductive film according to claim 10, wherein the surface resistance of the transparent conductive film is 100 Ω / □ or less. 如請求項10之透明導電性膜之製造方法,其中前述透明導電性膜係電極。 The method for manufacturing a transparent conductive film according to claim 10, wherein the transparent conductive film is an electrode. 如請求項10之透明導電性膜之製造方法,其中前述透明導電性膜之保護層之厚度係10至500nm。 The method for manufacturing a transparent conductive film according to claim 10, wherein the thickness of the protective layer of the transparent conductive film is 10 to 500 nm.
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