TWI605368B - Pressure-sensing imput device - Google Patents

Description

Pressure sensing input device

The invention relates to the field of pressure sensing technology, and in particular to a pressure input device.

Transparent conductive films are now widely used in flat panel displays, photovoltaic elements, touch panels and electromagnetic masks. Among them, ITO (Indium Tin Oxide) film is one of the commonly used conductive films, but with the development of new products, higher requirements are placed on the precision and sensitivity of the conductive film. The electrode formed of ITO has the following problems: (1) As the resistance and application size become larger, the current transfer rate between the electrodes becomes slower, causing the corresponding speed (referring to the time when the fingertip is touched to detect the position) (2) When the conductive film formed of ITO is applied with pressure, only the shape variable is small, the resistance changes little, and the accuracy of the pressure sensing is poor; (3) as the length of the sensing electrode increases, the line The width is also continuously reduced, and the resistance of the sensing electrode formed by the existing ITO is increased to cause distortion of the contact voltage; (4) ITO is expensive and the manufacturing process is complicated. In view of the problems of ITO, finding ITO replacement materials with excellent performance has become the direction of the industry.

To overcome the existing integrated touch input device and use ITO material For the problem of the presence of a conductive material, the present invention provides a pressure sensing input device having a pressure sensing detection function.

The technical solution of the present invention is to provide a pressure sensing input device, comprising: a first substrate; a first conductive layer, comprising a plurality of first pressure sensing electrodes disposed on a surface of the first substrate, Sensing the magnitude of the pressure, the first pressure sensing electrode is formed by a metal mesh; the pressure sensing wafer is electrically connected to the first pressure sensing electrode, and the pressure sensing wafer is generated by detecting the first pressure sensing electrode after being subjected to pressure The amount of change in resistance enables the detection of the magnitude of the pressure.

Preferably, the metal mesh is composed of a plurality of nano-sized metal particles, and the plurality of nano-sized metal particles are pressed against each other under pressure to cause a change in the resistance of the metal mesh.

Preferably, the metal grid has a line width of 1 μm to 10 μm.

Preferably, the first pressure sensing electrode is radially, curved, or spiral.

Preferably, the first pressure sensing electrode includes a lower portion adjacent to the first substrate and an upper portion away from the first substrate, and a wire diameter of the lower portion is smaller than a wire diameter of the upper portion.

Preferably, the first conductive layer further includes a first pressure sensing arrangement area and a first touch sensing arrangement area complementary to the area of the first pressure sensing arrangement area, and the plurality of first pressure sensing electrodes are disposed at the first The first touch sensing configuration area is provided with a plurality of first touch sensing electrodes, and the first touch sensing electrodes are used for detecting multi-touch.

Preferably, the first touch sensing electrodes are alternately staggered and bridged by connecting the insulating blocks, and the first pressure sensing electrodes are disposed in the spaced regions between the first touch sensing electrodes.

Preferably, the first touch sensing electrode is formed by a metal mesh having a line width of 1 μm to 10 μm; and the metal mesh is composed of a plurality of nano metal particles.

Preferably, the line width of the first pressure sensing electrode is smaller than the line width of the first touch sensing electrode.

Preferably, the first touch sensing electrode further includes a first direction touch sensing electrode and a second direction touch sensing electrode, wherein the first pressure sensing electrode is disposed on the first direction touch sensing electrode and The second direction is between the touch sensing electrodes.

Preferably, the pressure sensing input device further includes a second substrate and a second conductive layer, the second conductive layer is disposed on the surface of the second substrate, and the second conductive layer includes a plurality of second touch sensing electrodes and/or a second pressure The sensing electrode; the first touch sensing electrode and the second touch sensing electrode are used for detecting multi-touch.

Preferably, the pressure sensing input device further comprises a protective cover having a first surface and an oppositely disposed second surface, the first surface being for a user to apply a touch action, the second surface being adjacent to the first substrate.

Preferably, the first substrate is a protective cover, and the protective cover has a first surface and an oppositely disposed second surface, the first surface being applied by a user for a touch action.

Preferably, the strain sensing element of the pressure sensing electrode is greater than 0.5.

Preferably, the pressure sensing electrode enables multi-point pressure detection.

Compared with the prior art, firstly, the present invention provides a pressure sensing input device comprising a plurality of pressure sensing electrodes formed by a metal mesh, wherein the metal mesh is composed of a plurality of nanometers. Made of metal particles, They squeeze each other under pressure and cause a change in the resistance of the metal grid. Compared to prior art fabrication of sensing electrodes using ITO materials, the metal mesh of the present invention is capable of producing greater deformation when subjected to pressure. In the present invention, when the user applies a touch action and the force is transmitted to the first conductive layer, each corresponding pressure sensing electrode in the conductive layer generates a corresponding action, and the metal mesh correspondingly undergoes physical deformation, and further, due to the composition The metal grid of the pressure sensing electrode is formed by a plurality of nano-sized metal particles. During the stress process, the nano-scale metal particles and the particles also bring about changes in the position of the microscopic space, and the physical The deformation acts together to bring about a more significant change in the resistance value. The pressure sensing chip in the pressure sensing input device processes the signal to calculate the position of the touch action and the force of the touch pressure, and further realize the difference. The amount of contact pressure can be achieved with different functional operations.

The invention innovatively uses a metal mesh to prepare a pressure sensing electrode, effectively combining the resistance characteristics of the metal mesh and the change characteristics of the nano-scale metal particles after pressing, thereby obtaining a high sensitivity and precision. The pressure sensing input device of the pressure sensing, such a design can greatly improve the user experience and satisfaction of using the product.

In the pressure sensing electrode composed of a metal mesh in the present invention, a wire diameter of a lower portion of the pressure sensing electrode near the substrate is smaller than a wire diameter of an upper portion of the pressure sensing electrode remote from the substrate, and a shape of a cross section of the pressure sensing electrode It can be semi-arc, inverted triangle, trapezoidal, etc. This arrangement is conducive to stress concentration, so that the resistance of the pressure sensing electrode during the "touch" and "pressure" changes more significantly.

In the pressure sensing input device composed of a metal mesh provided by the present invention, a metal grid patterned pressure sensing electrode and a touch sensing electrode can be simultaneously formed on one conductive layer, thereby being in a conductive layer. Implement pressure detection and touch The function of position detection. The pressure sensing electrode can sense the touch screen according to the pressure of the finger pressing, causing the microscopic deformation of the pressure sensing electrode to cause a change in the resistance value, and then interacting with the touch sensing electrode to detect the resistance through the pressure sensing wafer. The value of the change can accurately determine the magnitude of the pressing force, and can accurately measure the two-dimensional coordinates and the three-dimensional touch pressure.

The pressure sensing input device provided by the metal mesh of the present invention may include two or more conductive layers, and the conductive layer may include at least one of a pressure sensing electrode and a touch sensing electrode. The pressure sensing input device may further include a protective layer and/or an optical matching layer and/or a protective cover such that a better performing pressure sensing input device may be obtained as desired. Wherein, when the pressure sensing electrode and the touch sensing electrode are in the same layer pressure sensing input device, the pressure sensing input device provided by the present invention is compared with the structure of the touch screen compared with the conventional pressure sensing The thickness is smaller and the cost is lower. Moreover, during integration, the pressure sensing electrode and the touch sensing electrode are respectively located in the touch sensing configuration area of the pressure sensing arrangement area with complementary areas, thereby reducing the visibility of the pressure sensing input device while reducing the visibility thereof. Effect.

In the pressure sensing input device provided by the present invention, the line width of the metal mesh pressure sensing electrode is smaller than the line width of the touch sensing electrode, and the line length of the pressure sensing electrode is larger than the touch sensing electrode in the unit area. The length of the wire further concentrates the applied force, so that the metal mesh pressure sensing electrode obtains a larger deformation, thereby improving the accuracy and sensitivity of the touch position and pressure sensing.

10‧‧‧Metal mesh pressure sensing input device

101‧‧‧First substrate

1011‧‧‧ upper

1012‧‧‧ lower

103‧‧‧ Conductive layer

1031‧‧‧First pressure sensing electrode

1032‧‧‧First electrode connection line

104‧‧‧ Pressure Sensing Wafer

1041‧‧‧ Wheatstone Bridge Circuit

20‧‧‧ Pressure sensing input device

201‧‧‧ Conductive layer

202‧‧‧First pressure sensing electrode

203‧‧‧Second electrode connection line

2031‧‧‧Send line

2032‧‧‧ receiving line

204‧‧‧ Pressure Sensing Wafer

2041‧‧‧ Wheatstone Bridge Circuit

6013‧‧‧First direction touch sensing electrode

60131‧‧‧First direction touch sensing electrode protrusion

6014‧‧‧Second direction touch sensing electrode

6015‧‧‧First electrode connection line

60141‧‧‧Second direction touch sensing electrode protrusion

6021‧‧‧First pressure sensing electrode

6031‧‧‧First touch sensing electrode

70‧‧‧ Pressure sensing input device

702‧‧‧First touch sensing electrode

703‧‧‧First pressure sensing electrode

71‧‧‧First substrate

72‧‧‧First conductive layer

721‧‧‧First direction touch sensing electrode

7211‧‧‧First touch sensing junction

30‧‧‧ Pressure sensing input device

31‧‧‧First substrate

32‧‧‧First conductive layer

321‧‧‧ Pressure sensing configuration area

3211‧‧‧First pressure sensing electrode

322‧‧‧First touch sensing configuration area

3221‧‧‧First touch sensing electrode

34‧‧‧ Pressure touch sensing chip

341‧‧‧ Wheatstone Bridge Circuit

40‧‧‧ Pressure sensing input device

40'‧‧‧ Pressure Sensing Input Device

40”‧‧‧ Pressure Sensing Input Device

41‧‧‧First conductive layer

411‧‧‧First pressure sensing electrode

412‧‧‧First touch sensing electrode

42‧‧‧First substrate

43‧‧‧Protective layer

44‧‧‧Optical matching layer

45‧‧‧Protection cover

50‧‧‧ Pressure sensing input device

51‧‧‧ protective cover

52‧‧‧First conductive layer

521‧‧‧First pressure sensing electrode

522‧‧‧First touch sensing electrode

722‧‧‧First direction pressure sensing electrode

7221‧‧‧First connection segment

723‧‧‧Second direction touch sensing electrode

7231‧‧‧Second touch sensing junction

724‧‧‧Second direction pressure sensing electrode

7241‧‧‧Second connection

725‧‧‧First insulation structure

80‧‧‧ Pressure sensing input device

80'‧‧‧ Pressure Sensing Input Device

81‧‧‧First substrate

810‧‧‧First conductive layer

811‧‧‧First pressure sensing electrode

812‧‧‧First touch sensing electrode

813‧‧‧First direction touch sensing electrode

814‧‧‧Second direction touch sensing electrode

815‧‧‧Connecting insulation block

82‧‧‧First touch sensing configuration area

821‧‧‧First pressure sensing electrode

83‧‧‧First pressure sensing configuration area

1001‧‧‧imprinted rubber layer

1002‧‧‧First substrate

1003‧‧‧ patterned grooves

1004‧‧‧ Pressure sensing electrode grid pattern groove

53‧‧‧First substrate

55‧‧‧Second conductive layer

551‧‧‧Second touch sensing electrode

56‧‧‧second substrate

60‧‧‧ Pressure sensing input device

602‧‧‧First substrate

603‧‧‧First conductive layer

604‧‧‧First touch sensing configuration area

605‧‧‧ Pressure sensing configuration area

1005‧‧‧Touch sensing electrode grid pattern groove

1006‧‧‧ Pressure sensing electrode

1007‧‧‧Touch sensing electrode

1008‧‧‧First conductive layer

S1, S2, S211, S212, S213, S214, S221, S222, S223‧‧ steps

Fig. 1A is a schematic view showing the three-dimensional explosion structure of the first embodiment of the pressure sensing input device of the present invention.

Fig. 1B is a front elevational view showing the conductive layer of the pressure sensing input device shown in Fig. 1A.

Fig. 1C is a schematic cross-sectional view taken along line A-A in Fig. 1A.

Fig. 1D is a schematic cross-sectional view showing still another modified embodiment of Fig. 1C.

Fig. 1E is a schematic cross-sectional view showing still another modified embodiment of Fig. 1C.

Figure 2 is a front elevational view showing the conductive layer of the second embodiment of the pressure sensing input device of the present invention.

Fig. 3A is a perspective view showing the three-dimensional explosion structure of the third embodiment of the pressure sensing input device of the present invention.

Figure 3B is a front elevational view of the conductive layer of the pressure sensing input device of Figure 3A.

Fig. 4A is a schematic cross-sectional view showing a fourth embodiment of the pressure sensing input device of the present invention.

Fig. 4B is a schematic cross-sectional view showing still another modified embodiment of Fig. 4A.

Fig. 4C is a schematic cross-sectional view showing still another modified embodiment of Fig. 4A.

Fig. 5 is a perspective view showing the three-dimensional explosion structure of the fifth embodiment of the pressure sensing input device of the present invention.

Fig. 6A is a schematic view showing the three-dimensional explosion structure of the sixth embodiment of the pressure sensing input device of the present invention.

Fig. 6B is a schematic plan view showing a part of the conductive layer in Fig. 6A.

Fig. 7A is a plan view showing the structure of the seventh embodiment of the pressure sensing input device of the present invention.

Fig. 7B is an enlarged schematic view of I in Fig. 7A.

Fig. 8A is a schematic structural view of an eighth embodiment of the pressure sensing input device of the present invention.

Fig. 8B is a schematic structural view of still another modified embodiment of Fig. 8A.

Figure 9 is a flow chart showing a method of manufacturing the pressure sensing input device of the ninth embodiment of the present invention.

Fig. 10A is a flow chart showing the manufacturing method of step S2 of Fig. 9.

Fig. 10B is a schematic cross-sectional view of the step S211 of Fig. 10A.

Fig. 10C is a schematic cross-sectional view showing the step S212 of Fig. 10A.

Fig. 10D is a schematic cross-sectional view of the step S213 of Fig. 10A.

Fig. 11A is a schematic cross-sectional view showing still another modified embodiment of the step S211.

11B is a schematic cross-sectional view showing still another modified embodiment of step S212.

11C is a schematic cross-sectional view showing still another modified embodiment of step S213.

Figure 12 is a flow chart showing a method of manufacturing the pressure sensing input device of the tenth embodiment of the present invention.

The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Metal Mesh (MM) is a kind of conductive form formed by silver or copper atoms or silver oxides in a grid pattern. material.

The metal mesh is composed of a plurality of nano-sized metal particles, and the plurality of nano-sized metal particles are pressed against each other under pressure to change the position of the microscopic space between the nano-sized metal particles constituting the metal mesh, thereby causing the metal The grid resistance changes.

Nanoscale metal particles include, but are not limited to, materials such as conductive silver inks, nanosilver particles, silver or copper metals, and oxides thereof. Wherein, the conductive silver ink is taken as an example, and the particle diameter ranges from 1 to 15 nm, more preferably from 2 to 10 nm.

The working principle of the metal mesh constituting the pressure sensing electrode of the present invention is as follows, but is not limited thereto: when the user touches with a finger, the nano metal in the metal mesh constituting the pressure sensing electrode is caused. A slight deformation occurs between the particles, and the line length of the corresponding pressure sensing arrangement area will change (because it is pressed), thereby affecting the equivalent resistance value of the pressure sensing electrode. When pressed, the metal mesh constituting the pressure sensing electrode has physical deformation, and the nano-sized metal particles forming the metal mesh may also be close to each other due to the action of pressure, so that the nano-sized metal particles are The previous spatial position changes, resulting in a change in resistance. Therefore, when the force of the touch is different, the metal mesh composed of a plurality of nano-sized metal particles will produce different resistance changes. If the force of the touch pressure is large, the resistance of the pressure sensing electrode formed by the metal mesh has a large amount of change; conversely, if the force of the touch pressure is small, the pressure sensing formed by the metal mesh The resistance of the electrode has a small amount of change. Therefore, by measuring the amount of change in the resistance of the pressure sensing electrode formed by the metal mesh, the force of the contact pressure can be judged.

Since the pressure sensing electrodes are usually made of the same material, an important parameter that should be considered in the material selection of the pressure sensing electrodes is the strain gauge of the material. Number (Gage Factor; GF). The gage factor (GF) of the material is shown as follows: GF = (ΔR / R) / (△ L / L); Where R is the equivalent resistance value of the pressure sensing electrode when it is not touched, ΔR is the resistance change value after the pressure sensing electrode is touched, and L is the line when the pressure sensing electrode is not touched. Long, ΔL is the amount of change in line length after the pressure sensing electrode is pressed. In one embodiment, in order to better detect the magnitude of ΔR, the strain sensing factor GF of the pressure sensing electrode is greater than 0.5 to provide better sensitivity.

Referring to FIGS. 1A-1B , a first embodiment of the pressure sensing input device of the present invention provides a metal mesh pressure sensing input device 10 . The pressure sensing input device includes a first substrate 101 disposed on the surface of the first substrate 101 . The first conductive layer 103 and the pressure sensing wafer 104. The surface of the first conductive layer 103 includes a plurality of first pressure sensing electrodes 1031, and the first pressure sensing electrodes 1031 are arranged in an M×N equidistant matrix. The pressure sensing wafer 104 is electrically coupled to the first pressure sensing electrode 1031.

The first pressure sensing electrode 1031 is used to sense the magnitude of the pressure, and the first pressure sensing electrode 1031 is formed by a metal mesh. The metal mesh is composed of a plurality of nano-sized metal particles, and a plurality of nano-sized metal particles are pressed against each other under pressure to cause a change in the resistance of the metal mesh. The metal grid has a line width of 1 μm to 10 μm. The pressure sensing wafer 104 realizes the detection of the magnitude of the pressure by detecting the amount of change in resistance of the first pressure sensing electrode 1031 after being subjected to pressure.

The pressure sensing wafer 104 and the first pressure sensing electrode 1031 are connected by a plurality of first electrode connecting lines 1032, and each of the first pressure sensing electrodes 1031 forms a loop through the first electrode connecting line 1032.

The material of the first electrode connecting line 1032 is not limited to ITO, and It is a transparent nano silver wire, nano copper wire, graphene, polyaniline, PEDOT: PSS transparent conductive polymer material, carbon nanotube, graphene and the like.

In some embodiments, the pressure sensing die 104 may further include a Wheatstone bridge circuit 1041 that signals the change in the resistance value of the first pressure sensing electrode 1031 to thereby cause the pressure sensing wafer 104 can more accurately detect the magnitude of the external pressure, so as to carry out subsequent different control signal output.

In some embodiments, the first pressure sensing electrode 1031 can also be disposed directly on the surface of the first substrate 101.

The first pressure sensing electrode 1031 in the first embodiment of the pressure sensing input device of the present invention includes a lower portion 1012 adjacent to the first substrate 101 and an upper portion 1011 away from the first substrate 101, wherein the lower portion 1012 The wire diameter is smaller than the wire diameter of the upper portion 1011. The shape of the cross section of the first pressure sensing electrode 1031 may be specifically a trapezoidal shape, a semi-arc shape, an inverted triangle shape, an irregular shape, or the like.

The height of the first pressure sensing electrode 1031 is 1 μm to 8 μm, more preferably 2 μm to 6 μm, and the line width is 1 μm to 7 μm, more preferably 1 μm to 6 μm, still more preferably 1 μm to 5 μm.

Referring to FIG. 2, a second embodiment of the metal mesh pressure sensing input device of the present invention provides a pressure sensing input device 20 including a first conductive layer 201. The first conductive layer 201 includes a first pressure sensing electrode 202 arranged in an M×N array. Here, only a small number of first pressure sensing electrodes 202 are illustrated in a schematic manner. In an actual product, the first pressure sensing electrode 202 It may also be arranged in a circumferential or matrix array with a radius R (R is a positive number greater than 0), or a combination of the above two modes or other irregular arrangement, and the first conductive layer 201 further includes pressure sensing. Wafer 204.

The first pressure sensing electrode 202 is in a radial radial shape and has two turns. Each of the first pressure sensing electrodes 202 is associated with a second electrode connection line 203. The second electrode connection line 203 includes a transmission line 2031 and a receiving line 2032. The transmission line 2031 is overlapped with the first pressure sensing electrode 202. At one end, the receiving line 2032 is overlapped to the other end of the first pressure sensing electrode 202, and the transmitting line 2031 and the receiving line 2032 are simultaneously connected to the pressure sensing wafer 204. The pressure sensing chip 204 is provided with the aforementioned Wheatstone bridge circuit 2041. The transmitting line 2301, the first pressure sensing electrode 202, the receiving line 2302 and the Wheatstone bridge circuit 2041 form a first pressure sensing electrode 202. Conductive loop with varying resistance.

The material of the second electrode connection line 203 may include, but is not limited to, metal oxide materials such as ITO, IZO, nano silver wire, nano copper wire, graphene, polyaniline or other conductive polymer materials. Or a combination thereof.

Referring to FIGS. 3A-3B, a third embodiment of the metal mesh pressure sensing input device of the present invention provides a pressure sensing input device 30. The pressure sensing input device 30 includes a first substrate 31, a first conductive Layer 32 and pressure touch sensing wafer 34.

The first conductive layer 32 includes a pressure sensing arrangement area 321 and a first touch sensing arrangement area 322 complementary to the area of the pressure sensing arrangement area 321 . The plurality of first pressure sensing electrodes 3211 are disposed in the pressure sensing area. In the configuration area 321 , a plurality of first touch sensing electrodes 3221 are disposed in the first touch sensing configuration area 322 .

Specifically, the first pressure sensing electrode 3211 of the first conductive layer 32 has a spring-like curve shape, and the first pressure sensing electrode 3211 is not in contact with the first touch sensing electrode 3221, thereby avoiding interference of an electrical signal, and a spring-like curve. The first sense of pressure The distribution of the measuring electrode 3211 can greatly improve the external pressure and deformation capability, thereby improving the accuracy. In order to obtain sufficient space for the first pressure sensing electrode 3211, the line width of the first touch sensing electrode 3221 can be used in the production process. Appropriately reducing, further providing a space for the layout of the first pressure sensing electrode 3211, and controlling the line width of the first pressure sensing electrode 3211 to be smaller than the first touch sensing electrode 3221, so that a larger deformation can be obtained, resulting in a larger The change in resistance causes the first pressure sensing electrode 3211 to achieve a better induction pressure effect.

The first touch sensing electrode 3221 can be used to detect multi-touch.

The first touch sensing electrode 3221 is formed by a metal mesh having a line width of 1 μm to 10 μm. Among them, the metal mesh is also composed of a plurality of nano-sized metal particles.

The pressure touch sensing die 34 may further include a Wheatstone bridge circuit 341.

Referring to FIG. 4A, a fourth embodiment of the metal mesh pressure sensing input device of the present invention provides a pressure sensing input device 40. The pressure sensing input device 40 includes a first conductive layer 41 and supports the first conductive layer 41. The first substrate 42 and the at least one protective layer 43 are provided with a first pressure sensing electrode 411 and a first touch sensing electrode 412. The protective layer 43 is disposed on the first conductive layer 41. The protective layer 43 is used for protecting the first conductive layer 41, preventing a series of damage caused by direct oxidation of the surface of the first conductive layer 41, corrosion, etc., resulting in a decrease in conductivity, and is advantageous for maintaining the flatness of the first conductive layer 41. Sex, improve its service life.

The material of the protective layer 43 may be a polymer material and an oxide, and specifically includes, but not limited to, polyacetylene, polyaniline, polyarylene, polythiophene, graphene, pentacene, polyphenylene acetylene (PPE), poly P-phenylene ethylene (PPV), poly(3,4-ethylene Dioxophene) (PEDOT), polystyrenesulfonic acid (PSS), poly(3-hexylthiophene) (P3HT), poly(3-octylthiophene) (P3OT), poly(arylene ether), poly(C) -61-butyric acid-methyl ester) (PCBM), poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), A material such as tantalum nitride, cerium oxide, a photoresist, or any combination thereof.

Referring to FIG. 4B, another pressure sensing input device 40' is provided in the fourth embodiment of the metal mesh pressure sensing input device of the present invention. The pressure sensing input device 40' includes a first conductive layer 41 and a supporting portion. A first substrate 42 of a conductive layer 41 and at least one optical matching layer 44. The first conductive sensing electrode 411 and the first touch sensing electrode 412 are disposed on the first conductive layer 41. The optical matching layer 44 is disposed on the lower surface of the first substrate 42 and is disposed corresponding to the first conductive layer 41 disposed on the upper surface of the first substrate 42 (herein, "upper" or "lower" to be described later is a relative position, not absolute The definition can also be understood as the lower surface when the upper surface is reversed.

Optical matching layer 44 is a low refractive index optical film that reduces the reflection of nanoscale metal particles. The low refractive index is a refractive index of less than 1.6, preferably 1.1 to 1.6, such as 1.1, 1.25, 1.32, 1.38, 1.46, 1.50, 1.52.

In a further variant embodiment, the position of the optical matching layer 44 is not limited and can be placed anywhere in the pressure sensing input device 40'.

Referring to FIG. 4C, a fourth embodiment of the metal mesh pressure sensing input device of the present invention provides a pressure sensing input device 40", the pressure sensing input device 40" includes a first conductive layer 41, a support portion A first substrate 42 and a protective cover 45 are disposed on the first conductive layer 41. The first conductive sensing electrode 411 and the first touch sensing electrode 412 are disposed on the first conductive layer 41. The protective cover 45 is disposed on the first conductive layer 41 for protecting the first pressure sensing electrode 411 on the first conductive layer 41 and the first touch sensing Electrode 412.

The protective cover 45 can also be added to any of the pressure sensing input device 40 or the pressure sensing input device 40' in this embodiment, and can further be disposed in any of the first to third embodiments of the present invention. In the input device.

In the present embodiment, the height of the first touch sensing electrode 412 is 1 μm to 6 μm, preferably 2 μm to 5 μm, and the line width thereof is 1 μm to 12 μm, and more preferably 1 μm to 10 μm.

Referring to FIG. 5, a fifth embodiment of the metal mesh pressure sensing input device of the present invention provides a pressure sensing input device 50. The pressure sensing input device 50 includes a protective cover 51, a first substrate 53, and a second substrate 56. And a first conductive layer 52 and a second conductive layer 55 respectively formed on the first substrate 53 and the second substrate 56, the protective cover 51 having a first surface and a second surface, and the first surface and the second surface Relatively disposed, the first surface is provided for the user to press. The first conductive layer 52 is located between the protective cover 51 and the first substrate 53. The first conductive layer 52 includes a first pressure sensing electrode 521 and a first touch sensing electrode 522. The first pressure sensing electrode 521 is formed by a metal grid, and the second conductive layer 55 includes a second touch uniformly disposed. The electrode 551 is sensed. When the user applies a touch action to the protective cover 51, the force is transmitted to the first pressure sensing electrode 521 in the first conductive layer 52 under the protective cover 51, causing deformation of the first pressure sensing electrode 521, Thereby causing a change in resistance, the change in resistance is processed by a pressure sensing wafer (not shown) to determine the magnitude of the pressure. In addition, when the user's finger approaches, the capacitive coupling between the first touch sensing electrode 522 and the second touch sensing electrode 551 is affected, so that the corresponding position of the finger touch can be detected by the corresponding wafer processing. In summary, the first conductive layer 52 corresponds to the first pressure sensing electrode 521 and the first touch sensing electrode 522, and the second corresponding layer of the second conductive layer 55 The touch sensing electrode 551 senses the position of the touch action and the force of the touch pressure, and can realize different functional operations by using different touch pressure amounts. Such a design can greatly improve the user experience and satisfaction of using the product. .

The material of the first touch sensing electrode 522 and the second touch sensing electrode 551 may be indium tin oxide (ITO), or may be nano silver wire, nano copper wire, graphene, polyaniline, PEDOT (poly) Derivative of thiophene polyethylene dioxythiophene): PSS (sodium polystyrene sulfonate) transparent conductive polymer material, carbon nanotubes, graphene and the like.

In another embodiment, the first touch sensing electrode 522 is also formed by a metal mesh, which is formed in the same process as the first pressure sensing electrode 521 formed by the metal mesh, thereby reducing the process. Processes to reduce costs.

In another embodiment, a second pressure sensing electrode (not shown) and a second touch sensing electrode 551 may be disposed on the second conductive layer 55, or a second pressure sensing electrode may be separately disposed. Not shown). In other embodiments, the first pressure sensing electrode 521 and the second pressure sensing electrode (not shown) enable multi-point pressure detection.

Referring to FIGS. 6A-6B, the sixth embodiment of the metal mesh pressure sensing input device of the present invention is different from the third embodiment in that the first conductive layer 603 of the pressure sensing input device 60 includes the first embodiment. The first touch sensing electrode 6031 and the first touch sensing electrode 6031 may further include a first direction touch sensing electrode 6013 and a second direction touch sensing electrode 6014. The first conductive layer 603 further includes a first touch sensing arrangement area 604 and a first pressure sensing arrangement area 605. The first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014 are formed in the first touch sensing arrangement area 604 , and the first pressure sensing electrode 6021 is formed in the first pressure sensing arrangement area 605 .

The first touch sensing electrode 6031 (ie, the first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014) is disposed on the first substrate 602. The space occupied is relatively small.

The first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014 respectively include a plurality of first direction touch sensing electrode protrusions 60131 and second direction touch sensing electrodes extending in the second direction. The first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014 are complementary to each other, and the first direction touch sensing electrode protrusion 60131 and the second direction touch sensing electrode protrusion The output portions 60141 are spaced apart to form a staggered complementary pattern. The first pressure sensing electrode 6021 disposed in the pressure sensing arrangement region 605 is curved and disposed in the first direction touch sensing electrode 6013 and the second direction touch. The first pressure sensing electrode 6021 is not in contact with the first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014 in the corresponding gap formed by the sensing electrodes 6014, so that the electrical signal can be effectively avoided. The interference, and the first pressure sensing electrode 6021 of the curved shape distribution can greatly improve the external pressure and deformation capability, thereby improving the sensing accuracy, and arranging the first pressure sensing power in order to obtain sufficient space. The pole 6021 can obtain a large resistance change, and the line width of the first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014 can be moderately reduced and the line of the first pressure sensing electrode 6021 can be controlled during the production process. The width is smaller than the line width of the first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014. Preferably, the line width of the first pressure sensing electrode 6021 is the first direction touch sensing electrode 6013 or the second direction. The line width of the touch sensing electrode 6014 is 0.5 to 0.8 times. The number shape and the distribution of the first direction touch sensing electrode protrusion 60131 and the second direction touch sensing electrode protrusion 60141 are not limited.

The first electrode connection line 6015 respectively makes the first pressure sensing electrode 6021 is led out at both ends and connected to a pressure sensing wafer (not shown). The material of the first electrode connecting line 6015 is not limited to ITO, and may also be silver particles, nano silver, IZO (ZnO: In), AZO (ZnO). : Al), GZO (ZnO: Ga), IGZO (In: Ga: Zn), nano copper wire, graphene, polyaniline, PEDOT / PSS transparent conductive polymer material / carbon nanotube / graphene, etc. At least two sides of the first substrate 602 can be made into a frameless design to obtain a frameless touch input device.

In this embodiment, simultaneous sensing of the touch position and pressure on the same conductive layer (such as the first conductive layer 603) can be realized, and the first touch sensing electrode 6031 can be simultaneously completed in one printing ( The manufacturing of the first direction touch sensing electrode 6013 and the second direction touch sensing electrode 6014 and the first pressure sensing electrode 6021 greatly simplifies the process and reduces the cost.

Referring to FIGS. 7A-7B, a seventh embodiment of the present invention provides a pressure sensing input device 70. The pressure sensing input device 70 includes a first substrate 71 and a first conductive layer 72 disposed on the first substrate 71. The first conductive sensing layer 702 includes a first touch sensing electrode 702, a first pressure sensing electrode 703, and a first insulating structure 725. The first touch sensing electrode 702 includes a first direction touch sensing electrode 721 and a first The two-direction touch sensing electrode 723 includes a first direction pressure sensing electrode 722 and a second direction pressure sensing electrode 724. The first direction touch sensing electrode 721 can be divided into a first portion and a second portion. The first portion and the second portion are located on opposite sides of the first insulating structure 725, and the first direction touch sensing electrode 721 is The first direction pressure sensing electrode 722 can be divided into a first portion and a second portion. The first portion and the second portion are respectively located on opposite sides of the first insulating structure 725, and the first direction pressure sensing electrode 722 is The second direction touch sensing electrode 723 can be divided into a first part and a second part, and the first part and the second part are located in the first The second direction touch sensing electrodes 724 are divided into a first portion and a second portion, and the first portion and the second portion are located at the first side. The two sides of the insulating structure 725 correspond to each other, and the second direction pressure sensing electrodes 724 are staggered.

Specifically, the first touch sensing guiding segment 7211 of the first direction touch sensing electrode 721 and the first connecting segment 7221 of the first direction pressure sensing electrode 722 are connected to each other, and the second direction is The second touch sensing and guiding portion 7231 of the touch sensing electrode 723 and the second connecting portion 7241 of the second direction pressure sensing electrode 724 are connected to each other, that is, the first direction touch sensing electrode 721 and the first direction pressure It is not necessary to maintain electrical insulation between the sensing electrodes 722 and between the second direction touch sensing electrodes 723 and the second direction pressure sensing electrodes 724. In some embodiments, the first connecting section 7221 and the first touch sensing guiding section 7211 may be an integrated structure, and the second connecting section 7241 and the second touch sensing guiding section 7231 are integrated, but The implementation manner is not limited thereto.

Of course, in other embodiments, the first pressure sensing electrode 703 and the first touch sensing electrode 702 are not necessarily staggered, and the corresponding first pressure sensing electrode 703 and the first touch sensing electrode may be used. 702 is arranged in a symmetrical manner, and is not limited thereto, and any change in position is within the scope of the present invention.

In other embodiments, the pressure sensing input device 70 may further include a second conductive layer (not shown), and the second conductive layer is provided with a second pressure sensing electrode that is consistent in the first conductive layer 72 in this embodiment. (not shown) and a second touch sensing electrode (not shown).

In this embodiment, touch sensing and pressure sensing are implemented on the first conductive layer 72 of the first substrate 71. On the one hand, the prepared material can be saved, so that the pressure is made. The thickness of the force sensing input device is reduced. On the other hand, the first pressure sensing electrode 703 and the first touch sensing electrode 702 are on the same plane, and the pressure sensing input device is prevented from performing pressure touch. The mutual influence during sensing ensures the accuracy of pressure value sensing and touch sensing.

Referring to FIG. 8A, an eighth embodiment of the present invention provides a pressure sensing input device 80. The nano silver line pressure sensing input device 80 is coupled with a pressure sensing input device 80 having a first pressure sensing electrode 811. The single layer bridging structure wherein the pressure sensing input device 80 designs the first pressure sensing electrode 811 to be coplanar with the electrodes in the single layer bridging structure. The first conductive layer 810 includes a first touch sensing arrangement area 82 and a first pressure sensing arrangement area 83. The first touch sensing electrodes 812 are disposed in the first touch sensing arrangement area 82, and the adjacent first touch sensing electrodes 812 are staggered and complementary with a certain interval. The first pressure sensing electrodes 811 are disposed in the first a first pressure sensing arrangement area 83 between the touch sensing electrodes 812, the first pressure sensing electrodes 811 may be irregular lines of a certain line width, and the first pressure sensing electrodes 811 are not limited to the broken lines, and It can be a curve or the like.

In the present embodiment, the pressure sensing input device 80 having the first pressure sensing electrode 811 includes a first substrate 81 and a first conductive layer 810 disposed on the first substrate 81. The first conductive layer 810 includes a plurality of The first touch sensing electrodes 812 are arranged at a distance and the first pressure sensing electrodes 811 disposed between the first touch sensing electrodes 812 . The first pressure sensing electrode 811 may be one or more. Further, the first pressure sensing electrode 811 can be disposed in the first pressure sensing configuration area 83 between the first touch sensing electrodes 812. The first touch sensing electrode 812 can be divided into a first direction touch sensing electrode 813 and a second direction touch sensing electrode 814, a first direction touch sensing electrode 813 and a second direction touch sensing. Insulation block is connected between the electrodes 814 815 bridge. The first touch sensing electrode 812 and the first pressure sensing electrode 811 are not in contact with each other, and interference can be avoided.

In this embodiment, the first touch sensing electrode 812 and the first pressure sensing electrode 811 are arranged to form a uniformly distributed electrode pattern. When pressed, the first pressure sensing electrode 811 has physical deformation, and the nano silver wires are also close to each other due to pressure, thereby causing a change in resistance. Such a design can effectively improve the resistance caused by the touch action. The significant degree of change in value.

In addition, in this embodiment, touch sensing and pressure sensing are simultaneously performed on the same first conductive layer 810 of the same first substrate 81, and the first touch sensing electrodes 812 and the first touch sensing electrodes 812 can be simultaneously completed in one printing. The first pressure sensing electrode 811 is fabricated to simplify the process and reduce the manufacturing cost.

As shown in FIG. 8B, in a further modified embodiment of the eighth embodiment of the pressure sensing input device of the present invention, a pressure sensing input device 80' is provided, which differs from the pressure sensing input device 80 in that: A first pressure sensing arrangement area 83 on a conductive layer 810 is distributed around the first touch sensing arrangement area 82, and the first pressure sensing electrode 821 and the first touch are disposed in the first pressure sensing arrangement area 83. The first touch sensing electrodes 812 disposed in the control sensing configuration area 82 are not in contact with each other and have complementary shapes.

In another modified embodiment, the number, shape, and distribution of the first pressure sensing electrodes 821 are not limited.

Referring to FIG. 9 , a ninth embodiment of the present invention provides a method for manufacturing a pressure sensing input device. The following is a reference to the third embodiment of the present invention. Step: Step S1: providing a first substrate 31; and Step S2: forming a plurality of pressures on one surface of the first substrate 31 The first conductive layer 32 of the sensing electrode 3211; the pressure sensing electrode 3211 is formed of a metal mesh.

The step S2 further includes forming a first pressure sensing arrangement area 321 and a first touch sensing arrangement area 3222 having complementary areas on the first conductive layer 32. The pressure sensing electrode 3211 is disposed in the first pressure sensing arrangement area. In the 321 , a plurality of first touch sensing electrodes 3221 are disposed in the first touch sensing configuration area 322 .

According to the method of the ninth embodiment of the present invention, the first pressure sensing electrode 3211 and the first touch sensing electrode 3221 can be obtained on the same layer.

In the above step S1, the first substrate 31 provides support for the entire pressure sensing input device 30, wherein the angle of the water drop angle of the first substrate 31 is 0° to 30°, more preferably less than 0° to 10°.

The first substrate 31 may include, but is not limited to, a rigid substrate such as glass, tempered glass, sapphire glass, etc., or a flexible substrate such as PEEK (polyetheretherketone) or PI (Polyimide). Imine), PET (polyethylene terephthalate), PC (polycarbonate, polycarbonate), PES (polyethylene glycol succinate, polyethylene succinate), PMMA ( Polymethylmethacrylate, polymethyl methacrylate, PVC (Polyvinyl chloride), PP (Polypropylene, polypropylene) and a composite of any two of them. The first substrate 31 may also be a polarizer or a filter substrate.

Step S2 can be formed by imprinting, as shown in FIGS. 10A-10D, comprising: step S211, forming an imprinting layer 1001 on the first substrate 1002; Step S212, a corresponding patterned groove 1003 is formed on the embossed layer 1001; in step S213, the conductive groove is filled in the patterned groove 1003; and in step S214, the conductive material in the patterned groove 1003 is cured. .

As shown in FIG. 10B, in step S211, an embossing adhesive is applied on the upper surface or the lower surface of the first substrate 1002 to form an embossed adhesive layer (herein, "upper" or "lower" as described later is a relative position, not Absolute definition, at the same time can be understood as the upper surface when the upper surface is reversed). The embossing paste may include, but is not limited to, solvent-free UV-curable acryl resin, UV-curable acrylate-based glue, and polycarbonate. The thickness of the embossed layer 1001 is 2 μm to 25 μm, more preferably 3 μm to 20 μm.

As shown in FIG. 10C, in step S212, a corresponding patterned groove 1003 is formed on the embossed layer 1001. The depth of the patterned recess 1003 should be less than the thickness of the embossed layer 1001. The width of the patterned groove 1003 is 500 nm to 10 μm, more preferably 1 μm to 10 μm. The depth of the patterned groove 1003 is 2 μm to 11 μm, more preferably 2 μm to 5 μm. The ratio of the depth/width of the patterned groove 1003 is 0.5 to 2.

The patterning groove 1003 further includes a pressure sensing electrode grid pattern groove 1004 and a touch sensing electrode grid pattern groove 1005, in order to obtain a larger deformation variable of the pressure sensing electrode 1006, wherein the pressure sensing The depth of the electrode grid pattern groove 1004 is greater than the depth of the touch sensing electrode grid pattern groove 1005. The depth of the pressure sensing electrode grid pattern groove 1004 is 2 μm~6 μm, and the line width is 1 μm~7 μm, which is better. The touch sensing electrode grid pattern groove 1005 has a depth of 1 μm to 5 μm, a line width of 2 μm to 10 μm, or more preferably 2 μm to 6 μm, in the range of 1 μm to 6 μm, and more preferably 1 μm to 5 μm.

As shown in FIG. 10D, step S213, that is, in the above patterned groove The conductive material is filled in 1003, specifically, a plurality of patterned pressure sensing electrodes 1006 are formed, and a plurality of touch sensing electrodes 1007 are patterned and connected to each other. The conductive material is uniformly filled at the bottom of the patterned groove 1003 and communicated with each other.

Dark matter additive particles may also be added to the conductive material. Wherein, the dark matter additive particles may include at least one or a combination of several of a submicron order (fine diameter of 100 nm to 1 μm) of carbon powder, iron powder, iron oxide or copper oxide. The particle size of the dark additive particles is from 20 nm to 800 nm, and the particle diameter thereof is further preferably from 40 nm to 600 nm, more preferably from 50 nm to 500 nm. The dark additive particles may range from 5% to 40% by weight of the conductive material, and preferably range from 10% to 35%, more preferably from 10% to 30%.

Step S214, that is, curing the conductive material in the patterned groove to form a conductive mesh pattern. The ultraviolet light curing conductive material preferably has a wavelength of ultraviolet light curing of 400 nm.

In some cases (such as overflow, poor flatness, etc.), you can also choose to carry out the polishing process. Removing the conductive material on the surface of the transparent insulating layer (not shown), leaving only the conductive material in the patterned recess (not shown) to form the first conductive layer 1008; the polishing process may be mechanical polishing, chemical electrolysis or chemistry Any one or combination of corrosion.

Referring to FIGS. 11A-11C , a modification of step S2 is performed by simultaneously forming an embossing layer 1001 on the upper surface and the lower surface of the first substrate 1002, and embossing the embossed layer 1001 to form a pattern. The groove 1003 is formed with a plurality of thin wires made of a conductive material (such as metal) in the embossing layer 1001 of the upper surface and the lower surface of the first substrate 1002 after the conductive material is filled in the patterning groove 1003. a grid of metal thin wires) forms a plurality of pressure sensings that are connected to each other The electrode 1006 and the plurality of first touch sensing electrodes 1007 are patterned to communicate with each other.

Referring to FIG. 12, a tenth embodiment of the present invention provides a method for manufacturing a pressure sensing input device, which is different from the ninth embodiment of the present invention in that step S2' may specifically include the following steps: S221 Forming a photosensitive silver salt emulsion layer on the upper and lower surfaces of the first substrate 1002; S222, exposing the photosensitive material in the photosensitive silver salt emulsion layer; and S223, developing the exposed photosensitive material.

In step S221, a long photosensitive material is formed, a first photosensitive silver halide emulsion layer (not shown) is formed on one surface of the first substrate 1002, and a second photosensitive is formed on the other surface of the first substrate 1002. Silver halide emulsion layer (not shown).

Among them, the photosensitive material includes a photosensitive silver salt and an adhesive, and also includes an additive such as a solvent and a dye. The photosensitive material is used to form a photosensitive silver halide emulsifier layer.

The photosensitive silver salt in the photosensitive material may also be an inorganic silver salt such as silver chloride, silver bromide, and an organic silver salt such as silver iodide or silver acetate. In the present embodiment, silver halide having excellent characteristics of the photosensor is preferable.

Among them, the adhesive includes, but is not limited to, the following materials: gelatin, polyvinyl alcohol, polyvinyl pyrrolidone, starch and other polysaccharides, cellulose and its inducer, polyethylene oxide, polyvinylamine, and B Chitin, polylysine, polyacrylic acid, polyalginic acid, hyaluronic acid, carboxy cellulose, and the like.

The solvent used in the formation of the first photosensitive silver halide emulsion layer (not shown) and the second photosensitive silver halide emulsion layer (not shown) is not particularly limited and may include, but is not limited to, water, organic solvent. (such as alcohols such as methanol, ketones such as acetone, decylamines such as formamide, hydrazines such as dimethyl hydrazine, and esters such as ethyl acetate), ions A mixed solvent of a liquid and any combination thereof. The content of the solvent is the total quality of the first photosensitive silver halide emulsion layer (not shown) or the silver halide salt (adhesive) contained in the second photosensitive silver halide emulsion layer (not shown). The percentage of the quality of the solvent ranges from 30 to 90%, preferably from 50 to 80%.

The other additives are not particularly limited, and a known additive can be preferably used.

In step S222, the first photosensitive silver halide emulsion layer (not shown) and the second photosensitive silver halide emulsion layer (not shown) formed on the two corresponding surfaces of the first substrate 1002 are sensitized. The material is exposed.

In order to avoid exposure of the photosensitive material from one side to another single side image formation, the light directed to the first photosensitive silver halide emulsion layer (not shown) is restricted to the second photosensitive silver halide emulsion layer (Fig. Light transmission on the back side (or light directed to the first photosensitive silver halide emulsion layer (not shown) is transmitted to the back side of the second photosensitive silver halide emulsion layer (not shown), first and second photosensitive The thickness of the silver halide emulsion layer (not shown) is set to be 1 μm to 4 μm, more preferably 1 μm to 3 μm, and the upper limit thereof is preferably 2.5 μm. In addition, since the silver halide itself can absorb light, the above-mentioned light transmission problem can also be limited by setting the amount of silver applied to the first and second photosensitive silver halide emulsion layers (not shown) to 5 to 20 g/m ² . .

Further, in order to prevent the occurrence of image defects caused by exposure due to dust or the like adhering to the surface of the film, a method of applying a conductive substance on the film in the conventional method for solving the above image defect problem is employed. The metal oxide remains, which in turn impairs the transparency of the final product and destabilizes the product, causing problems in storage of the conductive polymer. In this embodiment, by adjusting the ratio between the photosensitive silver salt (such as silver halide) and the adhesive in the photosensitive silver halide emulsion layer, To reduce the adsorption of small particle impurities such as dust on the surface of the film. Wherein, the volume ratio of the photosensitive silver salt (such as silver halide) to the binder is greater than 1:1, preferably greater than 2:1.

In step S223, a conductive grid pattern is formed on the first substrate 1002 by performing development processing on the exposed photosensitive material. However, the exposure time and the development time of the first photosensitive silver halide emulsion layer and the second photosensitive silver halide emulsion layer may vary depending on the type of the light source and the type of the developer, and thus a preferable numerical range cannot be determined, but It can be adjusted to an exposure time of 100% and a development time.

In this embodiment, a protective layer (not shown) may be disposed on the first photosensitive silver halide emulsion layer and the second photosensitive silver halide emulsion layer, and the protective layer indicates bonding of the glue and the high molecular polymer. The layer composed of the agent can effectively prevent scratches and improve mechanical properties. Further, under the silver salt emulsion layer, for example, an undercoat layer may be provided.

In this embodiment, an optical matching layer (not shown) may be formed on the first photosensitive silver halide emulsion layer (not shown) and the second photosensitive silver halide emulsion layer (not shown) for optical matching. The layer (not shown) has the effect of a protective layer, which in turn reduces the optical reflection of the electrode grid.

Compared with the prior art, firstly, the present invention provides a pressure sensing input device comprising a plurality of pressure sensing electrodes formed by a metal mesh, wherein the metal mesh is composed of a plurality of nanometers. The metal particles are formed which, after being subjected to pressure, are pressed against each other to cause a change in the resistance of the metal grid. Compared to prior art fabrication of sensing electrodes using ITO materials, the metal mesh of the present invention is capable of producing greater deformation when subjected to pressure. In the present invention, when the user applies a touch action, the force is transmitted to the pressure sensing electrode, and the pressure sensing electrode generates a phase. The metal mesh should be physically deformed accordingly. In addition, since the metal mesh constituting the pressure sensing electrode is formed by a plurality of nano-sized metal particles, the nano-sized metal particles are subjected to a force process, and the nano-sized metal particles are The change in the position of the microscopic space between the particles also acts in conjunction with the physical deformation to bring about a more significant change in the resistance value, and the signal is processed by the pressure sensing wafer in the pressure sensing input device to calculate the touch. The position of the pressing action and the force of the pressing force, and further realize different functional operations that can be realized by different amounts of contact pressure.

The invention innovatively uses a metal mesh to prepare a pressure sensing electrode, effectively combining the resistance characteristics of the metal mesh and the change characteristics of the nano-scale metal particles after pressing, thereby obtaining a high sensitivity and precision. The pressure sensing input device of the pressure sensing, such a design can greatly improve the user experience and satisfaction of using the product.

In the pressure sensing electrode composed of a metal mesh in the present invention, a wire diameter of a lower portion of the pressure sensing electrode near the substrate is smaller than a wire diameter of an upper portion of the pressure sensing electrode remote from the substrate, and a shape of a cross section of the pressure sensing electrode It can be semi-arc, inverted triangle, trapezoidal, etc. This arrangement is conducive to stress concentration, so that the resistance of the pressure sensing electrode during the "touch" and "pressure" changes more significantly.

In the pressure sensing input device composed of a metal mesh provided by the present invention, metal grid patterned pressure sensing electrodes can be simultaneously formed on one conductive layer (such as the first conductive layer and the second conductive layer) and The sensing electrodes are touched to realize the functions of pressure detection and touch position detection in one conductive layer (such as the first conductive layer and the second conductive layer). The pressure sensing electrode can sense the touch screen according to the pressure of the finger pressing, causing the microscopic deformation of the pressure sensing electrode to cause a change in the resistance value, and then interacting with the touch sensing electrode to detect the resistance through the pressure sensing wafer. Value change The size can accurately determine the size of the pressing force, and can accurately measure the two-dimensional coordinates and the three-dimensional pressure.

The pressure sensing input device provided by the metal mesh of the present invention may include two or more conductive layers, and the conductive layer may include at least one of a pressure sensing electrode and a touch sensing electrode. The pressure sensing input device may further include a protective layer and/or an optical matching layer and/or a protective cover such that a better performing pressure sensing input device may be obtained as desired. Wherein, when the pressure sensing electrode and the touch sensing electrode are in the same layer of the pressure sensing input device, the thickness of the pressure sensing input device is smaller than that of the conventional pressure sensing device. The cost is lower. Moreover, during integration, the pressure sensing electrode and the touch sensing electrode are respectively located in the first pressure sensing configuration area and the first touch sensing configuration area, which are complementary in area, thereby reducing the thickness of the pressure sensing input device. At the same time reduce the effectiveness of its visibility.

In the pressure sensing input device provided by the present invention, the line width of the metal mesh pressure sensing electrode is smaller than the line width of the touch sensing electrode, and the line length of the pressure sensing electrode is larger than the touch sensing electrode in a unit area The length of the wire further concentrates the applied force, thereby making the metal mesh pressure sensing electrode obtain a larger deformation, thereby improving the accuracy and sensitivity of the touch position and pressure sensing.

The invention also provides a method for preparing a pressure sensing input device composed of a metal grid, which can simultaneously prepare a pressure sensing electrode and a touch sensing electrode on the same substrate, thereby greatly simplifying the process and reducing the manufacturing cost. . The dark-colored material additive particles having a particle size of 50 nm to 500 nm may be added to the nano-sized metal particles of the metal mesh for manufacturing the pressure sensing input device in the present invention, and the metal mesh may be effectively reduced due to the addition of the dark matter additive particles. The light reflection of the medium-nano-grade metal particles reduces their visibility.

The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalents, and improvements made within the principles of the present invention should be included in the scope of the present invention.

1031‧‧‧First pressure sensing electrode

1032‧‧‧First electrode connection line

104‧‧‧ Pressure Sensing Wafer

1041‧‧‧ Wheatstone Bridge Circuit

Claims (14)

A pressure sensing input device includes: a first substrate; a first conductive layer, comprising a plurality of first pressure sensing electrodes disposed on a surface of the first substrate for sensing a pressure, the first The pressure sensing electrode is formed by a metal mesh, wherein the metal mesh is composed of a plurality of nano-sized metal particles, and the plurality of nano-sized metal particles are pressed against each other to cause a change in resistance of the metal mesh after being subjected to the pressure. And a pressure sensing wafer electrically connected to the first pressure sensing electrode, the pressure sensing wafer detecting the magnitude of the pressure by detecting a resistance change generated by the first pressure sensing electrode after receiving the pressure . The pressure sensing input device of claim 1, wherein the metal grid has a line width of 1 μm to 10 μm. The pressure sensing input device of claim 1, wherein the first pressure sensing electrode is radially, curved, or spiral. The pressure sensing input device of claim 1, wherein the first pressure sensing electrode comprises a lower portion adjacent to the first substrate and an upper portion away from the first substrate, and a wire diameter of the lower portion is smaller than a wire diameter of the upper portion. The pressure sensing input device of claim 1, wherein the first conductive layer further comprises a first pressure sensing arrangement area and a first touch sensing configuration area complementary to the area of the first pressure sensing arrangement area. The plural first sense of pressure The measuring electrode is disposed in the first pressure sensing configuration area, wherein the first touch sensing configuration area is provided with a plurality of first touch sensing electrodes, and the plurality of first touch sensing electrodes are used for detecting multiple points Touch. The pressure sensing input device of claim 5, wherein the plurality of first touch sensing electrodes are staggered and complementary and bridged by connecting insulating blocks, wherein the first pressure sensing electrodes are disposed on the first touch sense The interval between the electrodes. The pressure sensing input device of claim 5, wherein the first touch sensing electrode is formed by a metal mesh having a line width of 1 μm to 10 μm; the metal mesh is composed of a plurality of nanometers Made up of graded metal particles. The pressure sensing input device of claim 7, wherein a line width of the first pressure sensing electrode is smaller than a line width of the first touch sensing electrode. The pressure sensing input device of claim 5, wherein the first touch sensing electrode further comprises a first direction touch sensing electrode and a second direction touch sensing electrode disposed at intervals, the first The pressure sensing electrode is disposed between the first direction touch sensing electrode and the second direction touch sensing electrode. The pressure sensing input device of claim 5, further comprising a second substrate and a second conductive layer, the second conductive layer being disposed on the surface of the second substrate, the second conductive layer comprising a plurality of second The touch sensing electrode and/or the plurality of second pressure sensing electrodes; the plurality of first touch sensing electrodes and the plurality of second touch sensing electrodes are used for detecting multi-touch. The pressure sensing input device of claim 1, further comprising a protective cover having a first surface and an oppositely disposed second surface for the user to apply pressure Action, the second surface is adjacent to the first substrate. The pressure sensing input device of claim 1, wherein the first substrate is a protective cover, the protective cover has a first surface and an opposite second surface, the first surface is for a user to apply Touch the action. The pressure sensing input device of any one of claims 1 to 12, wherein the pressure sensing electrode has a strain gauge factor greater than 0.5. The pressure sensing input device of claim 13, wherein the pressure sensing electrode is capable of multi-point pressure detection.