TWI492537B - Use the quasi - random code to control the power transistor on and off timing Random delay device - Google Patents
Use the quasi - random code to control the power transistor on and off timing Random delay device Download PDFInfo
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本案為一種使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲的裝置,尤指一種利用隨機碼產生隨機時序,驅動一樹狀結構的時序延遲傳遞裝置,以控制功率電晶體中各子元件隨機導通或關閉的一種裝置。The present invention relates to a device for controlling power transistor turn-on and turn-off timing random delay using a pseudo-random code, in particular to a random-timing random sequence to drive a tree-like timing delay transfer device to control randomization of sub-components in a power transistor. A device that turns on or off.
參照第一圖為習用的功率電晶體電路架構圖,其中包含了多個功率電晶體子元件(1),每個功率電晶體子元件(1)又由複數個N型或P型金氧半(MOS)電晶體(11)所組成。各個功率電晶體子元件(1)中之每個金氧半(MOS)電晶體(11)的源極(111)共接一起後成為該功率電晶體子元件的共源極端(12),而其每個閘極(112)共接一起後成為該功率電晶體子元件的共閘極端(13),又其每個汲極(113)連接一起後成為該功率電晶體子元件的共汲極端(14)。各個功率電晶體子元件中的共源極端輸出點(12)接一起成為功率電晶體共源極端(2),共閘極端輸出點(13)接一起成為功率電晶體共閘極端(3),共汲極端輸出點(14)接一起成為功率電晶體共汲極端(4)。Referring to the first figure, a conventional power transistor circuit architecture diagram includes a plurality of power transistor sub-elements (1), and each power transistor sub-element (1) is further composed of a plurality of N-type or P-type MOSs. (MOS) transistor (11). The sources (111) of each of the MOS transistors (11) of the respective power transistor sub-elements (1) are joined together to become the common source terminal (12) of the power transistor sub-element, and Each of the gates (112) is joined together to become the common gate terminal (13) of the power transistor sub-element, and each of the drain electrodes (113) is connected together to become the common terminal of the power transistor sub-element. (14). The common source extreme output point (12) in each power transistor sub-element is connected together to become a power transistor common source terminal (2), and the common gate extreme output point (13) is connected together to become a power transistor common gate terminal (3). The conjugate extreme output point (14) is connected together to become the power transistor conjugate terminal (4).
習用的功率電晶體其所有的功率電晶體子元件(1)中所包含的金氧半(MOS)電晶體(11)往往高達數千個,這些金氧半(MOS)電晶體(11)的源極(111)與源極(111)間、閘極(112)與閘極(112)間、汲極(113)與汲極(113)間層層的金屬接線過長,因而存在有 大量的寄生電容及寄生電阻。現有技術係將控制訊號或電源直接連接電晶體共源極輸出點(2)、共閘極輸出點(3)及共汲極輸出點(4),經由這些過長的金屬導線接至每個金氧半(MOS)電晶體(11)。其中控制信號經由閘極金屬連接線控制每個金氧半(MOS)電晶體(11)的導通或關閉,因過長的金屬連接線造成的寄生電阻電容(RC)效應,產生信號延遲作用,控制信號無法在同一時間抵達每個金氧半(MOS)電晶體(11)的閘極(112),所有的金氧半(MOS)電晶體(11)無法同時導通及同時關閉,其中離信號源越近的金氧半(MOS)電晶體(11)越早導通及關閉,越遠的金氧半(MOS)電晶體(11)越晚導通及關閉,因而使得距離信號源越近及越遠二端的金氧半(MOS)電晶體(11)損耗功率大,也越易損壞。又電源則經由源極或汲極金屬連接線直接連接至每個金氧半(MOS)電晶體(11),此金屬連接線產生的寄生電阻電容(RC)效應,使得每個金氧半(MOS)電晶體間的源極(111)與汲極(113)電壓、源極(111)與閘極(112)電壓不同,造成每個金氧半(MOS)電晶體(11)間的導通電流不同,其中離電源端越近的金氧半(MOS)電晶體(11)導通電流越大、消耗功率越多,因而越易損壞。Conventional power transistors have thousands of gold-oxygen (MOS) transistors (11) contained in all of the power transistor sub-elements (1), and these MOS transistors (11) The metal wiring between the source (111) and the source (111), between the gate (112) and the gate (112), and between the drain (113) and the drain (113) is too long, so there is A large amount of parasitic capacitance and parasitic resistance. In the prior art, the control signal or power source is directly connected to the transistor common source output point (2), the common gate output point (3), and the common drain output point (4), and each of these is connected to each of the long metal wires. Gold oxide half (MOS) transistor (11). Wherein the control signal controls the turn-on or turn-off of each of the MOS transistors (11) via the gate metal connection line, and the parasitic resistance (RC) effect caused by the excessive metal connection line causes a signal delay. The control signal cannot reach the gate (112) of each MOS transistor (11) at the same time, and all the MOS transistors (11) cannot be turned on and off at the same time, and the signal is off. The closer the source of the MOS transistor (11) is turned on and off, the farther the MOS transistor (11) turns on and off, so the closer and closer the source is. The far-end gold-oxide half (MOS) transistor (11) has a large power loss and is more susceptible to damage. The power supply is directly connected to each of the metal oxide half (MOS) transistors (11) via a source or drain metal connection, and the metal connection line produces a parasitic resistance capacitance (RC) effect, such that each gold oxide half ( MOS) The source (111) and the drain (113) voltage, the source (111) and the gate (112) voltage are different between the transistors, causing conduction between each of the MOS transistors (11). The current is different, and the closer the metal-oxygen (MOS) transistor (11) is closer to the power supply terminal, the larger the on-current is, and the more power is consumed, so that it is more susceptible to damage.
這些金屬連接線寄生電阻電容效應所造成的控制信號傳遞延遲及源極至閘極與汲極間電源電壓分佈不同,使得功率電晶體中每個金氧半(MOS)電晶體(11)功率損耗不均,導致功率電晶體中的某些區域的金氧半(MOS)電晶體(11)因功率消耗過大而損壞,最後 造成整個功率電晶體損壞。The control signal transmission delay caused by the parasitic resistance and capacitance effect of these metal connection lines and the source-to-gate-to-drain supply voltage distribution are different, so that each MOS transistor (11) power loss in the power transistor Uneven, causing some of the gold oxide half (MOS) transistors (11) in the power transistor to be damaged due to excessive power consumption, and finally Causes damage to the entire power transistor.
本案提出一種使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲的裝置,包含:一功率電晶體,具有多個功率電晶體子元件(1);一功率電晶體共源極端(2);一功率電晶體共閘極端(3);一功率電晶體共汲極端(4);一功率電晶體導通及關閉時序隨機延遲控制裝置(5)。The present invention proposes a device for controlling power transistor turn-on and turn-off timing random delay using a pseudo-random code, comprising: a power transistor having a plurality of power transistor sub-elements (1); a power transistor common source terminal (2); A power transistor common gate extreme (3); a power transistor common 汲 extreme (4); a power transistor turn-on and turn-off timing random delay control device (5).
本案係利用擬隨機碼產生器(52)控制時序延遲控制器(51),使經過時序延遲控制器(51)之時序控制信號產生器(6)之導通或關閉控制信號產生隨機延遲之效果後,再輸出至複數個功率電晶體子元件(1)。In this case, the quasi-random code generator (52) is used to control the timing delay controller (51) to generate a random delay effect after the timing control signal generator (6) of the timing delay controller (51) turns on or off the control signal. And then output to a plurality of power transistor sub-elements (1).
功率電晶體導通及關閉時序隨機延遲控制裝置(5)中之一擬隨機碼產生器(52)由長度為M的複數個移位暫存器、複數個互斥或邏輯閘或複數個互斥及邏輯閘組成,其中M為大於3的整數,產生2M -1組不同組合的M位元二進位碼輸出信號(522),用以驅動一具樹狀結構的時序延遲控制器(51),此一功率電晶體導通及關閉時序隨機延遲控制裝置(5)中各複數個輸出端(513)與該功率電晶體(10)中之複數個功率電晶體子元件(1)共閘極端(13)電性連接,藉以隨機控制複數個功率電晶體子元件(1)之導通或關閉的時間順序。One of the pseudo-random code generators (52) of the power transistor turn-on and turn-off timing random delay control device (5) is composed of a plurality of shift registers of length M, a plurality of mutually exclusive or logic gates or a plurality of mutually exclusive ones. And a logic gate composition, wherein M is an integer greater than 3, generating 2 M -1 sets of different combinations of M-bit binary code output signals (522) for driving a tree-like timing delay controller (51) a plurality of output terminals (513) of the power transistor turn-on and turn-off timing random delay control device (5) and a plurality of power transistor sub-elements (1) of the power transistor (10) having a common gate extreme ( 13) Electrical connection by which the chronological sequence of turning on or off of a plurality of power transistor sub-elements (1) is randomly controlled.
如所述之一種使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲的裝置,其中各功率電晶體子元件(1)係包含多個N型或 P型金屬氧化半導體(Metal Oxide Semiconductor,MOS,金氧半電晶體)(11)。其中對各複數個功率電晶體子元件(1)而言,可經由設計一個經由擬隨機碼產生器(52)驅動的具樹狀結構的時序延遲控制器(51),隨機產生讓功率電晶體子元件(1)導通及關閉的不同控制信號時序,藉此讓每個功率電晶體的子元件(1)承受相同的功率消耗。A device for controlling power transistor turn-on and turn-off random delay using a pseudo-random code, wherein each power transistor sub-element (1) comprises a plurality of N-types or P-type metal oxide semiconductor (Metal Oxide Semiconductor, MOS, gold oxide semi-transistor) (11). For each of the plurality of power transistor sub-elements (1), the power transistor can be randomly generated by designing a timing delay controller (51) having a tree structure driven by the pseudo random code generator (52). The sub-element (1) turns on and off different control signal timings, whereby the sub-element (1) of each power transistor is subjected to the same power consumption.
參照第二圖(A)為本案較佳實施例之一種使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲控制裝置示意圖,其中包含了由複數個功率電晶體子元件(1)組成的功率電晶體、功率電晶體導通及關閉時序隨機延遲控制裝置(5)、時序控制信號產生器(6)及時脈信號產生器(7)。其中功率電晶體導通及關閉時序隨機延遲控制裝置(5)由一組時序延遲控制器(51)及一組由長度為M的複數個移位暫存器、複數個互斥或邏輯閘或複數個互斥及邏輯閘組成之擬隨機碼產生器(52)所構成,其中M為大於3的整數。功率電晶體中的各個主要組成之功率電晶體子元件(1),係由多個N型或P型金氧半(MOS)電晶體(11)構成,而每個功率電晶體子元件(1)的閘極端(13)連接時序隨機延遲控制裝置(5)中的時序延遲控制器(51)中各個不同控制信號輸出端(513)。Referring to FIG. 2A, a schematic diagram of a random delay control device for controlling power transistor turn-on and turn-off timing using a pseudo random code according to a preferred embodiment of the present invention includes power composed of a plurality of power transistor sub-elements (1) The transistor, the power transistor is turned on and off, the timing random delay control device (5), the timing control signal generator (6), and the pulse signal generator (7). The power transistor turn-on and turn-off timing random delay control device (5) consists of a set of timing delay controllers (51) and a set of a plurality of shift registers of length M, a plurality of mutually exclusive or logic gates or complex numbers A quasi-random code generator (52) consisting of mutually exclusive and logical gates, where M is an integer greater than three. The power transistor sub-element (1) of each main component in the power transistor is composed of a plurality of N-type or P-type MOS transistors (11), and each power transistor sub-element (1) The gate terminal (13) of the ) is connected to each of the different control signal outputs (513) in the timing delay controller (51) in the time-series random delay control device (5).
一個時脈信號產生器(7)控制擬隨機碼產生器(52),輸出一個共有2M -1組不同組合的M位元二進位碼。功率電晶體導通及關閉時序隨機延遲控制裝置(5)中的時序延遲控制器(51)的輸入端 (511)電氣性連接時序控制信號產生器(6),另外M個輸入端(512)則電氣性連接M個擬隨機碼產生器輸出(522)。A clock signal generator (7) controls the pseudo random code generator (52) to output a M bit binary code having a total combination of 2 M -1 groups. The input terminal (511) of the timing delay controller (51) in the power transistor turn-on and turn-off timing random delay control device (5) is electrically connected to the timing control signal generator (6), and the other M inputs (512) are The M pseudo-random code generator outputs are electrically connected (522).
參照第二圖(B)為本案較佳實施例之時序延遲控制器(51)的示意圖,時序延遲控制器(51)由複數個時序延遲元件(514)以複數個階層樹的架構型態組合而成,第一層的時序延遲元件(514)時序信號輸入端(5142)透過時序延遲控制器控制信號輸入端(511)向外連接時序控制信號產生器(6),其餘各階層的時序延遲元件(514)的時序信號輸入端(5142)連接前一層的時序延遲元件(514)的時序信號輸出端(5143),最底層的時序延遲元件(514)其時序信號輸出端(5143)透過時序延遲控制器(51)控制信號輸出(513)分別連接不同的功率電晶體子元件(1)的共閘極端(13)。每個階層的時序延遲元件(514)時序延遲控制輸入端(5141)連接擬隨機碼產生器(52)M位元二進位隨機碼輸出(522)中任一位元輸出,以控制每個時序延遲元件(514)中導通及關閉路徑傳遞速度的優先順序。Referring to FIG. 2B, a timing delay controller (51) is a schematic diagram of a preferred embodiment of the present invention. The timing delay controller (51) is composed of a plurality of hierarchical delay elements (514) in a plurality of hierarchical tree architectures. The timing delay signal input terminal (5142) of the first layer is connected to the timing control signal generator (6) through the timing delay controller control signal input terminal (511), and the timing delays of the remaining layers are The timing signal input terminal (5142) of the component (514) is connected to the timing signal output terminal (5143) of the timing delay component (514) of the previous layer, and the timing signal output terminal (5143) of the lowest layer timing delay component (514) is transmitted through the timing sequence. The delay controller (51) control signal output (513) connects the common gate terminals (13) of the different power transistor sub-elements (1), respectively. Each stage timing delay element (514) timing delay control input (5141) is coupled to any one of the quasi-random code generator (52) M-bit binary random code output (522) to control each timing. The priority of the transfer speed of the conduction and closing paths in the delay element (514).
因為擬隨機碼產生器(52)每執行一次功率電晶體導通或關閉動作,其每次2M -1組的M位元二進位擬隨機碼輸出,隨著時脈信號產生器(7)的輸出時脈順序的不同而隨機產生,又藉由其對樹狀架構的時序延遲控制器(51)傳遞路徑的時序隨機快慢控制,以隨機控制功率電晶體中每次每個功率電晶體子元件(1)的導通或關閉順序,使得每個功率電晶體的子元件(1)可以承受相同的功率消耗,降低每個功率電晶體子元件(1)的損壞率,延長功率電晶體的 使用壽命。Because the pseudo-random code generator (52) performs the power transistor turn-on or turn-off every time, it outputs 2 M -1 sets of M-bit binary quasi-random code each time, with the clock signal generator (7) The output clock sequence is randomly generated, and the timing random delay control of the transfer path of the tree structure timing delay controller (51) is used to randomly control each power transistor sub-component in the power transistor. (1) The turn-on or turn-off sequence allows the sub-elements (1) of each power transistor to withstand the same power consumption, reducing the damage rate of each power transistor sub-element (1) and extending the life of the power transistor .
簡言之,本案係利用時脈信號產生器(7)輸出時脈至擬隨機碼產生器(52),來控制時序延遲控制器(51);使經過時序延遲控制器(51)之時序控制信號產生器(6)之導通或關閉控制信號產生隨機延遲之效果後,再輸出至複數個功率電晶體子元件(1),藉以均化每個功率電晶體的子元件(1)的功率消耗。In short, the case uses the clock signal generator (7) to output the clock to the pseudo-random code generator (52) to control the timing delay controller (51); the timing control of the timing delay controller (51) is performed. After the signal generator (6) turns on or off the control signal to generate a random delay effect, it is output to a plurality of power transistor sub-elements (1), thereby equalizing the power consumption of the sub-element (1) of each power transistor. .
本案具有下列優點:1.本案所提出的使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲控制裝置,能有效改善功率電晶體中子元件因金屬連接線寄生電阻及電容效應引起傳遞延遲所造成功率消耗不均之問題;2.本案所提出的使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲控制裝置,電路設計十分容易;3.本案所提出的使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲控制裝置,能讓每個功率電晶體的子元件承受相同的功率消耗,降低每個功率電晶體子元件的損壞率,延長功率電晶體的使用壽命。The present invention has the following advantages: 1. The random delay control device for controlling the power transistor turn-on and turn-off timing using the pseudo-random code proposed in the present invention can effectively improve the transfer delay of the sub-element of the power transistor due to the parasitic resistance and capacitance effect of the metal connection line. The problem of uneven power consumption is caused. 2. The circuit design is very easy to control the power transistor turn-on and turn-off timing random delay control device using the pseudo random code. 3. The power crystal controlled by the pseudo random code is proposed in this case. Turning on and off the timing random delay control device allows the sub-components of each power transistor to withstand the same power consumption, reducing the damage rate of each power transistor sub-element and prolonging the service life of the power transistor.
綜上所述,本案所提之使用擬隨機碼控制功率電晶體導通及關閉時序隨機延遲控制裝置,能改善因金屬連接線寄生電阻及電容效應引起傳遞延遲所造成功率消耗不均之問題,進步新穎且實用,如其變更設計,例如應用至各種類型之功率電晶體隨機延遲 控制,只要是利用所述之擬隨機碼或具有複數個階層樹的架構型態所組成的時序延遲元件以控制功率電晶體之各子元件之導通或關閉動作者,皆為本案所欲揭露及保護者。In summary, the use of pseudo-random code control power transistor turn-on and turn-off timing random delay control device in this case can improve the power consumption unevenness caused by the transmission delay caused by the parasitic resistance and capacitance effect of the metal connection line. Novel and practical, such as its modified design, for example applied to various types of power transistor random delay Control, as long as the timing delay element composed of the pseudo random code or the architecture type having a plurality of hierarchical trees is used to control the turn-on or turn-off of the sub-components of the power transistor, and is intended to be disclosed in this case. protector.
本案所揭露之技術,得由熟習本技術人士據以實施,而其前所未有之作法亦具備專利性,爰依法提出專利之申請。惟上述之實施例尚不足以涵蓋本案所欲保護之專利範圍,因此,提出申請專利範圍如附。The technology disclosed in this case can be implemented by a person familiar with the technology, and its unprecedented practice is also patentable, and the application for patent is filed according to law. However, the above embodiments are not sufficient to cover the scope of patents to be protected in this case. Therefore, the scope of the patent application is attached.
10‧‧‧功率電晶體10‧‧‧Power transistor
1‧‧‧功率電晶體子元件1‧‧‧Power transistor subcomponents
11‧‧‧N型或P型金氧半(MOS)電晶體11‧‧‧N-type or P-type gold oxide half (MOS) transistors
111‧‧‧N型或P型金氧半(MOS)電晶體源極端111‧‧‧N-type or P-type MOS transistor source extremes
112‧‧‧N型或P型金氧半(MOS)電晶體閘極端112‧‧‧N-type or P-type MOS transistor gate extremes
113‧‧‧N型或P型金氧半(MOS)電晶體汲極端113‧‧‧N-type or P-type MOS transistor 汲 extreme
12‧‧‧功率電晶體子元件共源極端12‧‧‧Power transistor sub-components
13‧‧‧功率電晶體子元件共閘極端13‧‧‧Power transistor sub-component common gate extreme
14‧‧‧功率電晶體子元件共汲極端14‧‧‧Power transistor sub-components
2‧‧‧功率電晶體共源極端2‧‧‧Power transistor common source extreme
3‧‧‧功率電晶體共閘極端3‧‧‧Power transistor common gate extreme
4‧‧‧功率電晶體共汲極端4‧‧‧Power transistor 汲 extreme
5‧‧‧功率電晶體導通及關閉時序隨機延遲控制裝置5‧‧‧Power transistor turn-on and turn-off timing random delay control device
51‧‧‧時序延遲控制器51‧‧‧Time Delay Controller
511‧‧‧時序延遲控制器控制信號輸入511‧‧‧Sequence delay controller control signal input
512‧‧‧時序延遲控制器M位元二進位隨機碼輸入512‧‧‧Time Delay Controller Mbit Binary Random Code Input
513‧‧‧時序延遲控制器控制信號輸出513‧‧‧Sequence delay controller control signal output
514‧‧‧時序延遲元件514‧‧‧Time delay components
5141‧‧‧時序延遲控制輸入端5141‧‧‧ Timing delay control input
5142‧‧‧時序信號輸入端5142‧‧‧ Timing signal input
5143‧‧‧時序信號輸出端5143‧‧‧ Timing signal output
52‧‧‧擬隨機碼產生器52‧‧‧ Quasi-random code generator
521‧‧‧擬隨機碼產生器時脈信號輸入521‧‧‧ Quasi-random code generator clock signal input
522‧‧‧擬隨機碼產生器M位元二進位隨機碼輸出522‧‧‧ Quasi-random code generator M-bit binary random code output
6‧‧‧時序控制信號產生器6‧‧‧Sequence Control Signal Generator
7‧‧‧時脈信號產生器7‧‧‧ Clock signal generator
S1‧‧‧控制信號輸入S1‧‧‧ control signal input
L1‧‧‧第一層L1‧‧‧ first floor
L2‧‧‧第二層L2‧‧‧ second floor
L3‧‧‧第三層L3‧‧‧ third floor
第一圖為習用的功率電晶體電路架構圖;第二圖為本案較佳實施例之功率電晶體時序隨機延遲控制裝置示意圖。The first figure is a conventional power transistor circuit architecture diagram; the second figure is a schematic diagram of a power transistor timing random delay control device according to a preferred embodiment of the present invention.
10‧‧‧功率電晶體10‧‧‧Power transistor
1‧‧‧功率電晶體子元件1‧‧‧Power transistor subcomponents
2‧‧‧功率電晶體共源極端2‧‧‧Power transistor common source extreme
3‧‧‧功率電晶體共閘極端3‧‧‧Power transistor common gate extreme
4‧‧‧功率電晶體共汲極端4‧‧‧Power transistor 汲 extreme
5‧‧‧功率電晶體時序隨機延遲控制裝置5‧‧‧Power transistor timing random delay control device
6‧‧‧時序控制信號產生器6‧‧‧Sequence Control Signal Generator
7‧‧‧時脈信號產生器7‧‧‧ Clock signal generator
Claims (8)
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TW101125481A TWI492537B (en) | 2012-07-16 | 2012-07-16 | Use the quasi - random code to control the power transistor on and off timing Random delay device |
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TW101125481A TWI492537B (en) | 2012-07-16 | 2012-07-16 | Use the quasi - random code to control the power transistor on and off timing Random delay device |
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TWI492537B true TWI492537B (en) | 2015-07-11 |
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Citations (5)
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US4253045A (en) * | 1979-02-12 | 1981-02-24 | Weber Harold J | Flickering flame effect electric light controller |
US5268631A (en) * | 1991-11-06 | 1993-12-07 | Chicago Stage Equipment Co. | Power control system with improved phase control |
US6862605B2 (en) * | 2001-08-15 | 2005-03-01 | Scott A. Wilber | True random number generator and entropy calculation device and method |
TW200527808A (en) * | 2003-11-21 | 2005-08-16 | Fairchild Semiconductor | Power converter having improved control |
US7376687B2 (en) * | 2003-03-31 | 2008-05-20 | Nec Electronics Corporation | Pseudo-random number generator |
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2012
- 2012-07-16 TW TW101125481A patent/TWI492537B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4253045A (en) * | 1979-02-12 | 1981-02-24 | Weber Harold J | Flickering flame effect electric light controller |
US5268631A (en) * | 1991-11-06 | 1993-12-07 | Chicago Stage Equipment Co. | Power control system with improved phase control |
US6862605B2 (en) * | 2001-08-15 | 2005-03-01 | Scott A. Wilber | True random number generator and entropy calculation device and method |
US7376687B2 (en) * | 2003-03-31 | 2008-05-20 | Nec Electronics Corporation | Pseudo-random number generator |
TW200527808A (en) * | 2003-11-21 | 2005-08-16 | Fairchild Semiconductor | Power converter having improved control |
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