TWI413145B - Pressure controlling switch and method applied the same and alert system using the same - Google Patents

Pressure controlling switch and method applied the same and alert system using the same Download PDF

Info

Publication number
TWI413145B
TWI413145B TW99111027A TW99111027A TWI413145B TW I413145 B TWI413145 B TW I413145B TW 99111027 A TW99111027 A TW 99111027A TW 99111027 A TW99111027 A TW 99111027A TW I413145 B TWI413145 B TW I413145B
Authority
TW
Taiwan
Prior art keywords
bistable
resistance state
resistive element
pressure
metal particles
Prior art date
Application number
TW99111027A
Other languages
Chinese (zh)
Other versions
TW201135788A (en
Inventor
chun-hua Hu
Chang-Hong Liu
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW99111027A priority Critical patent/TWI413145B/en
Publication of TW201135788A publication Critical patent/TW201135788A/en
Application granted granted Critical
Publication of TWI413145B publication Critical patent/TWI413145B/en

Links

Abstract

The disclosure relates to a pressure controlling switch. The temperature controlling switch includes a bistable resistance element. The bistable resistance element includes a polymer matrix and a plurality of metallic particles dispersed in the polymer matrix. The bistable resistance element has a high resistance state and a low resistance state. For the low resistance state, a plurality of metallic filaments will be formed on surfaces of the metallic particles and form a conductive path in the bistable resistance element. For the high resistance state, most of the metallic filaments will be broken down, whereby the conductive path will be broken down. A trigger signal of the low resistance state can be an incentive electrical filed. A trigger signal of the high resistance state can be a temperature difference signal. The disclosure also relates to a method applied the same and an alert system using the same.

Description

壓控開關、其應用方法及使用該壓控開關之報警系統Voltage control switch, application method thereof and alarm system using the same

本發明涉及一種壓控開關、應用該壓控開關之方法及使用該壓控開關之報警系統。The invention relates to a pressure control switch, a method of applying the pressure control switch and an alarm system using the same.

於一些需要防盜或防震之場合,如保險庫、試驗機台等,需要一壓控開關來監控該場合工作壓強之變化。該壓控開關不僅能感測該該工作壓強,還能夠根據該工作壓強之變化,於該工作壓強之變化大於或小於一設定值時,使該壓控開關保持於一個固定之工作狀態,從而使與該壓控開關連接之一報警系統能夠保持於報警狀態,即便該場合之工作壓強之變化消除。For some situations where anti-theft or anti-shock is required, such as the vault, test machine, etc., a pressure-controlled switch is needed to monitor the change of the working pressure in this occasion. The pressure control switch can not only sense the working pressure, but also maintain the pressure control switch in a fixed working state when the change of the working pressure is greater than or less than a set value according to the change of the working pressure. An alarm system connected to the voltage-controlled switch can be kept in an alarm state even if the change in the working pressure in this case is eliminated.

為使該壓控開關能夠於監測到壓強變化時保持於固定之工作狀態,該壓控開關不僅包括一感測工作壓強之壓強感測器,還包括一具邏輯運算能力之集成晶片或電路。該集成晶片或電路根據壓強感測器感測到之壓強訊號判斷該工作壓強之變化是否大於等於該設定值。當該工作壓強之變化大於或小於該設定值時,該集成晶片發出操作指令並使該壓控開關保持於固定之工作狀態。In order to enable the voltage control switch to maintain a fixed working state when the pressure change is monitored, the voltage control switch includes not only a pressure sensor for sensing the working pressure, but also an integrated chip or circuit with logic operation capability. The integrated chip or circuit determines whether the change in the working pressure is greater than or equal to the set value according to the pressure signal sensed by the pressure sensor. When the change in the operating pressure is greater than or less than the set value, the integrated wafer issues an operational command and maintains the voltage controlled switch in a fixed operational state.

從上述描述可看出,為使該壓控開關能夠監測到工作壓強之變化而工作於固定之工作狀態,該壓控開關必須包括複雜之邏輯運算元件,如上述集成晶片,從而使得該壓控開關所包括之器件較多,結構比較複雜。As can be seen from the above description, in order for the voltage control switch to monitor the working pressure change to operate in a fixed working state, the voltage control switch must include a complex logic operation element, such as the above integrated chip, so that the voltage control The switch includes more devices and the structure is more complicated.

有鑒於此,提供一種結構簡單之壓控開關、應用該壓控開關之方法及使用該壓控開關之報警系統實為必要。In view of this, it is necessary to provide a voltage control switch having a simple structure, a method of applying the voltage control switch, and an alarm system using the voltage control switch.

一種壓控開關,其包括一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒。該雙穩態電阻元件具有一低阻態與一高阻態兩個工作狀態。於低阻態,該複數金屬顆粒表面形成有金屬導電絲,該複數金屬顆粒通過該金屬導電絲形成一導電通路。於高阻態,該複數金屬顆粒表面之金屬導電絲斷裂,使該導電通路斷開。該低阻態之觸發訊號為一激勵電場。該高阻態之觸發訊號為一壓差訊號,該壓差訊號為該導電通路形成時直接作用於該雙穩態電阻元件之一初始壓強與該導電通路斷開時直接作用於該雙穩態電阻元件之一觸發壓強之絕對差值。A voltage controlled switch comprising a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. The bistable resistive element has two operating states of a low resistance state and a high resistance state. In the low resistance state, the surface of the plurality of metal particles is formed with a metal conductive wire, and the plurality of metal particles form a conductive path through the metal conductive wire. In the high resistance state, the metal conductive wire on the surface of the plurality of metal particles is broken to break the conductive path. The trigger signal of the low resistance state is an excitation electric field. The high-impedance trigger signal is a differential pressure signal, and the differential pressure signal directly acts on the bistable state when the conductive path is formed directly on the initial pressure of the bistable resistive element and the conductive path is disconnected. One of the resistive elements triggers an absolute difference in pressure.

一種壓控開關,其包括一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒。一激勵電場產生單元,用於產生一激勵電場使該複數金屬顆粒形成一導電通路並記憶一初始壓強。一壓差訊號產生單元,用於產生一大於等於一最小壓差之壓差訊號使該導電通路斷開。A voltage controlled switch comprising a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. An excitation electric field generating unit is configured to generate an excitation electric field to form the plurality of metal particles to form a conductive path and to memorize an initial pressure. A differential pressure signal generating unit is configured to generate a differential pressure signal equal to or greater than a minimum differential pressure to disconnect the conductive path.

一種壓控開關,其包括一雙穩態電阻元件、一發出激勵電場之激勵電場產生單元及一發出壓差訊號之壓差訊號產生單元。該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒。該激勵電場作用於該雙穩態電阻元件使該複數金屬顆粒形成一導電通路並使該雙穩態電阻元件記憶一初始壓強;該壓差訊號產生單元用於產生一大於等於一最小壓差之壓差訊號使該導電通路斷開。A voltage controlled switch includes a bistable resistive element, an excitation electric field generating unit that emits an electric field, and a differential pressure generating unit that emits a differential pressure signal. The bistable resistive element comprises a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. The excitation electric field acts on the bistable resistive element to form the conductive metal path to form a conductive path and the bistable resistive element memorizes an initial pressure; the differential pressure signal generating unit is configured to generate a minimum differential pressure equal to or greater than a minimum The differential pressure signal causes the conductive path to open.

一種應用壓控開關之方法,包括以下步驟:提供一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒;當需要監測該壓控開關所處環境之工作壓強變化時,於初始壓強P1施加一激勵電場作用於該雙穩態電阻元件,使該雙穩態電阻元件處於並維持低阻態;當該雙穩態電阻元件之壓強變化超過最小壓差△P時,該雙穩態電阻元件由低阻態變成高阻態並維持於高阻態。A method for applying a voltage controlled switch, comprising the steps of: providing a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier; when the voltage control needs to be monitored When the working pressure of the environment in which the switch is placed changes, an exciting electric field is applied to the bistable resistive element at the initial pressure P1, so that the bistable resistive element is in a low resistance state; when the pressure of the bistable resistive element is When the variation exceeds the minimum differential pressure ΔP, the bistable resistance element changes from a low resistance state to a high resistance state and is maintained at a high resistance state.

一種報警系統,其包括一報警裝置及一壓控開關。該壓控開關用於控制該報警裝置報警。該壓控開關包括一雙穩態電阻元件、一激勵電場產生單元及壓差訊號產生單元。該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒。該激勵電場產生單元,用於施加一激勵電場使該雙穩態電阻元件工作於低阻態。該壓差訊號產生單元,用於產生一壓差訊號使該雙穩態電阻元件工作於高阻態。An alarm system includes an alarm device and a voltage control switch. The voltage control switch is used to control the alarm device alarm. The voltage control switch comprises a bistable resistance element, an excitation electric field generating unit and a differential pressure signal generating unit. The bistable resistive element comprises a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. The excitation electric field generating unit is configured to apply an excitation electric field to operate the bistable resistance element in a low resistance state. The differential pressure signal generating unit is configured to generate a differential pressure signal to operate the bistable resistive element in a high resistance state.

相較於先前技術,該壓控開關中之雙穩態電阻元件通過該激勵電場與該壓差訊號於低阻態與高阻態之間進行轉換,且於感應到該壓差訊號後自動切換到高阻態。從而使該壓控開關不需要結構複雜之邏輯運算元件,僅需要一雙穩態電阻元件就能監測該壓控開關所處環境之工作壓強之變化,且能於監測到該工作壓強之變化時保持於固定之工作狀態,如高阻狀態,從而使得該壓控開關結構簡單。進一步地,該雙穩態電阻元件於該激勵電場作用下又工作於低阻態,可用來再次監測該壓差訊號。Compared with the prior art, the bistable resistive element in the voltage control switch is switched between the low impedance state and the high impedance state by the excitation electric field and the differential pressure signal, and automatically switches after sensing the differential pressure signal. To high resistance. Therefore, the voltage control switch does not need a complicated logic operation component, and only needs a bistable resistance component to monitor the change of the working pressure of the environment in which the voltage control switch is located, and can monitor the change of the working pressure. It is kept in a fixed working state, such as a high resistance state, so that the voltage control switch has a simple structure. Further, the bistable resistive element operates in a low resistance state under the excitation electric field, and can be used to monitor the differential pressure signal again.

以下將結合附圖對本發明實施例進行詳細說明。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

請參見圖1,本發明實施例提供一種壓控開關100,其包括一雙穩態電阻元件10、一激勵電場產生單元20及一壓差訊號產生單元30。Referring to FIG. 1 , an embodiment of the present invention provides a voltage control switch 100 including a bistable resistive element 10 , an excitation electric field generating unit 20 , and a differential pressure signal generating unit 30 .

請參見圖2至圖4,該雙穩態電阻元件10為一複合材料,其包括複數金屬顆粒11及一高分子載體12,該複數金屬顆粒11分散於高分子載體12中。該雙穩態電阻元件10具有一低阻態與一高阻態兩個工作狀態。於低阻態,該複數金屬顆粒11表面形成有金屬導電絲13(Filament),該複數金屬顆粒11通過該金屬導電絲13形成一導電通路。於高阻態,該複數金屬顆粒11表面之金屬導電絲13斷裂,使該導電通路斷開。該高分子載體12為於受力狀態具有明顯形變之絕緣材料,該高分子載體12用於支撐該金屬顆粒11,並於被壓迫或者拉伸時產生明顯之變形或者體積變化。於本實施例中,金屬顆粒11為粒徑於1微米~6微米左右之鎳顆粒,該鎳顆粒於該雙穩態電阻元件10中之體積比於9%~11%之間;該高分子載體12為具有較小彈性模量之矽橡膠(約為0.01~0.1),用於支撐該金屬顆粒11,具體地,該鎳顆粒與高分子載體12之彈性模量之比值大於等於2000之聚二甲基矽氧烷(PDMS: PolyDimethylsiloxane);該雙穩態電阻元件10於高阻態時之電阻與於低阻態時之電阻之比值大致於103 :1與104 :1之間。Referring to FIGS. 2 to 4, the bistable resistive element 10 is a composite material comprising a plurality of metal particles 11 and a polymer carrier 12 dispersed in the polymer carrier 12. The bistable resistive element 10 has two operating states of a low resistance state and a high resistance state. In the low resistance state, the surface of the plurality of metal particles 11 is formed with a metal conductive wire 13 through which the plurality of metal particles 11 form a conductive path. In the high resistance state, the metal conductive wire 13 on the surface of the plurality of metal particles 11 is broken to break the conductive path. The polymer carrier 12 is an insulating material having a significant deformation in a stressed state, and the polymer carrier 12 is used to support the metal particles 11 and to cause significant deformation or volume change when pressed or stretched. In the present embodiment, the metal particles 11 are nickel particles having a particle diameter of about 1 μm to 6 μm, and the volume ratio of the nickel particles in the bistable resistive element 10 is between 9% and 11%; The carrier 12 is a ruthenium rubber (about 0.01 to 0.1) having a small elastic modulus for supporting the metal particles 11. Specifically, the ratio of the elastic modulus of the nickel particles to the polymer carrier 12 is greater than or equal to 2000. Dimethyl methoxide (PDMS: PolyDimethylsiloxane); the ratio of the resistance of the bistable resistive element 10 in the high resistance state to the resistance in the low resistance state is approximately between 10 3 :1 and 10 4 :1.

該激勵電場產生單元20用於產生一激勵電場,該激勵電場直接作用於雙穩態電阻元件10,使該雙穩態電阻元件10工作於低阻態,即該激勵電場為該雙穩態電阻元件10工作於低阻態之觸發訊號。具體地,請參閱圖3,該雙穩態電阻元件10中複數金屬顆粒11於該激勵電場之激勵下從表面延伸出複數金屬導電絲13,從而使相鄰之兩個金屬顆粒11之間通過金屬導電絲相互連接,從而使相互電連接之金屬顆粒11之個數增多,進而形成一個導電通路,該雙穩態電阻元件10之電阻產生躍遷,使該雙穩態電阻元件10工作於低阻態。於本實施例中,該激勵電場產生單元20為一脈衝訊號產生裝置,該激勵電場為一脈衝電場。該脈衝電場之寬度於1毫秒~10秒之間,強度於0.3伏特每毫米~3伏特每毫米之間。該激勵電場可通過任意方式載入於該雙穩態電阻元件10,如將該雙穩態電阻元件10放置於一具有該激勵電場之環境中,如電容中。The excitation electric field generating unit 20 is configured to generate an excitation electric field, and the excitation electric field directly acts on the bistable resistance element 10 to operate the bistable resistance element 10 in a low resistance state, that is, the excitation electric field is the bistable resistance Element 10 operates on a low impedance trigger signal. Specifically, referring to FIG. 3, the plurality of metal particles 11 in the bistable resistive element 10 extend from the surface to excite the plurality of metal conductive wires 13 under the excitation of the excitation electric field, thereby passing between the adjacent two metal particles 11. The metal conductive wires are connected to each other such that the number of metal particles 11 electrically connected to each other is increased to form a conductive path, and the resistance of the bistable resistive element 10 is shifted, so that the bistable resistive element 10 operates at a low resistance. state. In the embodiment, the excitation electric field generating unit 20 is a pulse signal generating device, and the exciting electric field is a pulse electric field. The pulsed electric field has a width of between 1 millisecond and 10 seconds and an intensity of between 0.3 volts per millimeter to 3 volts per millimeter. The excitation field can be loaded into the bistable resistive element 10 by any means, such as placing the bistable resistive element 10 in an environment having the exciting electric field, such as a capacitor.

該壓差訊號產生單元30用於產生一壓差訊號使該雙穩態電阻元件10發生壓強變化。該壓差訊號為直接作用於該雙穩態電阻元件10之壓強變化。當該壓差訊號超過一最小壓差時,即該雙穩態電阻元件10之壓強變化之絕對值大於一預定值時,該雙穩態電阻元件10工作於高阻態,即該壓差訊號為使該雙穩態電阻元件10工作於高阻態之觸發訊號。定義該導電通路形成時該雙穩態電阻元件10之壓強為一初始壓強,該壓差訊號產生單元30產生壓差訊號,使該雙穩態電阻元件10工作於高阻態時,該雙穩態電阻元件10壓強為一觸發壓強,該壓差訊號為該觸發壓強與初始壓強之絕對差值。譬如於該導電通路形成時該初始壓強為20帕,而壓差訊號產生單元30作用於該雙穩態電阻元件10後,使該雙穩態電阻元件10工作於高阻態,該觸發壓強為15帕,則該壓差訊號為5帕。即,該壓差訊號為該導電通路於形成與斷開時該雙穩態電阻元件10所處環境之壓強變化強度或壓強變化值。另外,依據形成導電通路時該雙穩態電阻元件10之壓強之不同,該雙穩態電阻元件10可具有不同之初始壓強,即上述該雙穩態電阻元件10形成導電通路時之初始壓強是可變化之。當該雙穩態電阻元件10於不同之壓強下被激勵電場多次觸發形成導電通路時,該雙穩態電阻元件10即可具有複數數值不等之初始壓強,又可具有複數數值相等之初始壓強。即當該雙穩態電阻元件10於高阻態與低阻態之間多次切換時具有之初始壓強之數值是可變之。譬如,該雙穩態電阻元件10於第一次工作於低阻態時之初始壓強為20帕,切換到高阻態時之觸發壓強為15帕。此時,若於15帕時給該雙穩態電阻元件10施加一激勵電場使該雙穩態電阻元件10工作於低阻態,則該雙穩態電阻元件10第二次工作於低阻態時之初始壓強為15帕。故,該初始壓強是根據施加一激勵電場使該雙穩態電阻元件10工作於低阻態時雙穩態電阻元件10之壓強而確定之,是可變化之。另外,該壓差訊號之產生方式及其採用之壓差訊號產生單元30之構成不限,只要能使直接作用於該雙穩態電阻元件10壓強產生變化即可。譬如,該壓差訊號可為放置該雙穩態電阻元件10之空間內之環境壓強之變化,如一反應爐中氣體壓強之變化;由咳嗽、震動產生之氣體壓強之變化等。另外,該壓差訊號也可為直接作用於該雙穩態電阻元件10上之拉力之變化或壓力之變化。The differential pressure signal generating unit 30 is configured to generate a differential pressure signal to cause a pressure change of the bistable resistive element 10. The differential pressure signal is a pressure change that directly acts on the bistable resistive element 10. When the differential pressure signal exceeds a minimum differential pressure, that is, when the absolute value of the pressure change of the bistable resistive element 10 is greater than a predetermined value, the bistable resistive element 10 operates in a high impedance state, that is, the differential pressure signal The trigger signal for operating the bistable resistive element 10 in a high impedance state. Defining the voltage of the bistable resistive element 10 when the conductive path is formed is an initial pressure, and the differential pressure generating unit 30 generates a differential pressure signal, so that the bistable resistive element 10 operates in a high impedance state, the bistable The state resistance element 10 is a trigger pressure, and the differential pressure signal is an absolute difference between the trigger pressure and the initial pressure. For example, when the conductive path is formed, the initial pressure is 20 Pa, and after the differential pressure signal generating unit 30 acts on the bistable resistive element 10, the bistable resistive element 10 is operated in a high resistance state, and the trigger pressure is 15 Pa, the pressure difference signal is 5 Pa. That is, the differential pressure signal is a pressure change intensity or a pressure change value of the environment in which the bistable resistive element 10 is placed when the conductive path is formed and broken. In addition, depending on the pressure of the bistable resistive element 10 when forming the conductive path, the bistable resistive element 10 may have a different initial pressure, that is, the initial pressure when the bistable resistive element 10 forms a conductive path is Can be changed. When the bistable resistive element 10 is triggered by the excitation electric field to form a conductive path at different pressures, the bistable resistive element 10 can have an initial pressure of unequal values, and can have an initial value of a complex number. pressure. That is, the value of the initial pressure when the bistable resistive element 10 is switched between the high resistance state and the low resistance state is variable. For example, the bistable resistive element 10 has an initial pressure of 20 Pa when operating in a low resistance state for the first time and a trigger pressure of 15 Pa when switching to a high resistance state. At this time, if an exciting electric field is applied to the bistable resistive element 10 at 15 Pa to operate the bistable resistive element 10 in a low resistance state, the bistable resistive element 10 operates in a low resistance state for the second time. The initial pressure is 15 Pa. Therefore, the initial pressure is determined according to the pressure of the bistable resistive element 10 when the bistable resistive element 10 is operated in a low resistance state by applying an exciting electric field, and is changeable. In addition, the method of generating the differential pressure signal and the configuration of the differential pressure signal generating unit 30 employed therein are not limited as long as the pressure acting directly on the bistable resistive element 10 can be changed. For example, the differential pressure signal may be a change in ambient pressure in a space in which the bistable resistive element 10 is placed, such as a change in gas pressure in a reactor; a change in gas pressure caused by coughing or vibration. In addition, the differential pressure signal may also be a change in the tensile force or a change in pressure directly acting on the bistable resistive element 10.

於工作時,該雙穩態電阻元件10於不同之初始壓強下對應有不同之最小壓差。當該雙穩態電阻元件10於一初始壓強接收到一激勵電場時,該複數金屬顆粒11形成一導電通路,此時,該雙穩態電阻元件10工作於低阻態。此時,該雙穩態電阻元件10於該初始壓強下具有一個對應之最小壓差。請參見圖4,當該雙穩態電阻元件10接收到一大於該最小壓差之壓差訊號時,該雙穩態電阻元件10於該壓差訊號之作用下產生形變或明顯之體積變化,引起該雙穩態電阻元件10中分子鏈之滑動,從而破壞導電通路,使該雙穩態電阻元件10工作於高阻態。具體地,由於該高分子載體12之彈性模量遠小於該金屬顆粒11之彈性模量,優選地,該金屬顆粒11之彈性模量與該高分子載體12之彈性模量之比值大於等於50。該高分子載體12於該壓差訊號下產生變形,使該複數金屬顆粒11之間產生相對滑移,使該金屬顆粒11之間之距離產生變化,從而使該複數金屬導電絲13斷裂。且,該壓差訊號對該導電通路之作用為非可逆之,即便是該壓差訊號撤銷,或者再次施加不同之壓差訊號,該導電通路依然於斷開狀態,使該雙穩態電阻元件10依然工作於高阻態。In operation, the bistable resistive element 10 has a different minimum differential pressure at different initial pressures. When the bistable resistive element 10 receives an excitation electric field at an initial pressure, the plurality of metal particles 11 form a conductive path, and at this time, the bistable resistive element 10 operates in a low resistance state. At this time, the bistable resistive element 10 has a corresponding minimum differential pressure at the initial pressure. Referring to FIG. 4, when the bistable resistive element 10 receives a differential pressure signal greater than the minimum differential pressure, the bistable resistive element 10 undergoes a deformation or a significant volume change under the action of the differential pressure signal. The sliding of the molecular chain in the bistable resistive element 10 is caused to break the conductive path, and the bistable resistive element 10 is operated in a high resistance state. Specifically, since the elastic modulus of the polymer carrier 12 is much smaller than the elastic modulus of the metal particles 11, preferably, the ratio of the elastic modulus of the metal particles 11 to the elastic modulus of the polymer carrier 12 is 50 or more. . The polymer carrier 12 is deformed under the pressure difference signal to cause a relative slip between the plurality of metal particles 11 to change the distance between the metal particles 11, thereby breaking the plurality of metal conductive wires 13. Moreover, the effect of the differential pressure signal on the conductive path is irreversible, and even if the differential pressure signal is cancelled, or a different differential pressure signal is applied again, the conductive path is still in an open state, so that the bistable resistive element 10 still works in high resistance.

請參閱圖5,為本實施例中雙穩態電阻元件10電連接一電源時之電流變化曲線示意圖。具體之,該雙穩態電阻元件10為一膜狀結構,自然放置於大氣環境中,該電源為一脈衝電源,相鄰兩個脈衝激勵電場之間之寬度為100毫秒,即每隔100毫秒給該雙穩態電阻元件10一個激勵電場。同時於該膜狀結構之一個表面每隔500毫秒施加一大於或等於0.3牛/每平方米之脈衝壓強,即每隔500毫秒給該雙穩態電阻元件10一個壓差訊號。從圖5中可看出,當該雙穩態電阻元件10接收到脈衝壓強時,該雙穩態電阻元件10之電阻大於等於107 歐姆,工作於高阻態;而當該脈衝壓強消失,該雙穩態電阻元件10於脈衝激勵電場之作用下電阻大致為105 歐姆,切換到到低阻態並一直保持。Please refer to FIG. 5 , which is a schematic diagram of a current variation curve when the bistable resistive element 10 is electrically connected to a power source in the embodiment. Specifically, the bistable resistive element 10 is a film-like structure and is naturally placed in an atmospheric environment. The power source is a pulse power source, and the width between adjacent two pulse excitation electric fields is 100 milliseconds, that is, every 100 milliseconds. The bistable resistive element 10 is given an excitation electric field. At the same time, a pulse pressure of greater than or equal to 0.3 N/m 2 is applied to a surface of the film structure every 500 msec, that is, a differential pressure signal is applied to the bistable resistive element 10 every 500 msec. As can be seen from FIG. 5, when the bistable resistive element 10 receives the pulse pressure, the resistance of the bistable resistive element 10 is greater than or equal to 10 7 ohms, operating in a high resistance state; and when the pulse pressure disappears, the bistable resistance element 10 under the action of an electric field excitation pulse of approximately 105 ohms resistance, is switched to the low resistance state and to remain.

除了本實施例中所列舉之材料及結構,該雙穩態電阻元件10中金屬顆粒11之種類、粒徑、於該雙穩態電阻元件10中之體積比及該高分子載體12之種類並沒有特別限制。只要能滿足該金屬顆粒11於一激勵電場下才能形成導電通路,且該導電通路於該高分子載體12產生明顯形變時能夠斷開即可。具體之,該金屬顆粒11還可為金、銀、錫、鐵、銅或鉑等,該金屬顆粒11之粒徑範圍可為2奈米到20微米,該金屬顆粒11於雙穩態電阻元件10中所佔之體積比可為5%到40%。該高分子載體12還可為除聚二甲基矽氧烷外之其他矽橡膠系列;該高分子載體12還可為聚合物,如聚乙烯乙二醇、聚丙烯;該高分子載體12還可為聚酯、環氧樹脂系列、缺氧膠系列或壓克力膠系列等。該雙穩態電阻元件10於高阻態時之電阻與於低阻態時之電阻之比值大於102 :1。進一步地,請參見圖6,該壓控開關100還可包括兩個電極40,該兩個電極40分佈於該雙穩態電阻元件10相對之兩個表面,如該雙穩態電阻元件10為一膜狀結構時,該兩個電極40可將該膜狀結構夾持形成一三明治結構。該壓控開關100可通過該兩個電極與外部電路電連接,如一控制電路或一報警裝置等。為操作方便,該激勵電場產生單元20可通過該兩個電極40與該雙穩態電阻元件10電連接。該電極40之材料不限,包括金屬、導電膠或金屬性奈米碳管等。The type and particle diameter of the metal particles 11 in the bistable resistive element 10, the volume ratio in the bistable resistive element 10, and the type of the polymer carrier 12, in addition to the materials and structures exemplified in the present embodiment. There are no special restrictions. As long as the metal particles 11 are satisfied under an excitation electric field, a conductive path can be formed, and the conductive path can be broken when the polymer carrier 12 is significantly deformed. Specifically, the metal particles 11 may also be gold, silver, tin, iron, copper or platinum, and the metal particles 11 may have a particle size ranging from 2 nm to 20 μm, and the metal particles 11 are in the bistable resistive element. The volume ratio in 10 can be 5% to 40%. The polymer carrier 12 may also be a series of other ruthenium rubbers other than polydimethyl siloxane; the polymer carrier 12 may also be a polymer such as polyethylene glycol or polypropylene; It can be polyester, epoxy resin series, anoxic glue series or acrylic glue series. The ratio of the resistance of the bistable resistive element 10 in the high resistance state to the resistance in the low resistance state is greater than 10 2 :1. Further, referring to FIG. 6, the voltage control switch 100 may further include two electrodes 40 distributed on opposite surfaces of the bistable resistive element 10, such as the bistable resistive element 10 being In the case of a film-like structure, the two electrodes 40 can sandwich the film-like structure to form a sandwich structure. The voltage control switch 100 can be electrically connected to an external circuit through the two electrodes, such as a control circuit or an alarm device. For ease of operation, the excitation electric field generating unit 20 can be electrically connected to the bistable resistance element 10 through the two electrodes 40. The material of the electrode 40 is not limited, and includes a metal, a conductive paste or a metallic carbon nanotube.

該壓控開關100中之雙穩態電阻元件10通過該激勵電場與該壓差訊號於低阻態與高阻態之間進行轉換,且於感應到該壓差訊號後自動切換到高阻態。從而使該壓控開關100不需要結構複雜之邏輯運算元件,僅需要一雙穩態電阻元件10就能監測該壓控開關100所處環境之工作壓強之變化,且能於監測到該工作壓強之變化時保持於固定之工作狀態,如高阻狀態,從而使得該壓控開關100結構簡單。進一步地,該雙穩態電阻元件10於該激勵電場作用下又工作於低阻態,可用來再次監測該壓差訊號。The bistable resistive element 10 of the voltage control switch 100 is switched between the low impedance state and the high impedance state by the excitation electric field and the differential pressure signal, and automatically switches to a high resistance state after sensing the differential pressure signal. . Therefore, the voltage control switch 100 does not need a complicated logic operation component, and only needs a bistable resistance component 10 to monitor the change of the working pressure of the environment in which the voltage control switch 100 is located, and can monitor the working pressure. The change is maintained in a fixed working state, such as a high resistance state, thereby making the voltage control switch 100 simple in structure. Further, the bistable resistive element 10 operates in a low resistance state under the excitation electric field, and can be used to monitor the differential pressure signal again.

請參見圖7,為應用該壓控開關100之方法,包括以下步驟。Referring to FIG. 7, a method for applying the voltage control switch 100 includes the following steps.

步驟S101,提供一雙穩態電阻元件10,該雙穩態電阻元件10包括一高分子載體12及分散於該高分子載體12中之複數金屬顆粒11。In step S101, a bistable resistive element 10 is provided. The bistable resistive element 10 includes a polymer carrier 12 and a plurality of metal particles 11 dispersed in the polymer carrier 12.

步驟S102,當需要監測該壓控開關100所處環境之工作壓強變化時,於初始壓強P1施加一激勵電場作用於該雙穩態電阻元件10,使該雙穩態電阻元件10處於並維持低阻態。該初始壓強P1為施加該激勵電場時該雙穩態電阻元件10之壓強。Step S102, when it is required to monitor the working pressure change of the environment in which the voltage control switch 100 is located, an excitation electric field is applied to the bistable resistance element 10 at the initial pressure P1, so that the bistable resistance element 10 is at and remains low. Resistance state. The initial pressure P1 is the pressure of the bistable resistive element 10 when the exciting electric field is applied.

步驟S103,當該雙穩態電阻元件10之壓強變化超過最小壓差△P時,該雙穩態電阻元件10由低阻態變成高阻態並維持於高阻態。即,當該雙穩態電阻元件10之觸發壓強P2與該初始壓強P1之壓強之絕對差值│P2-P1│≥△P時,該雙穩態電阻元件10之工作狀態發生變換並固定工作於高阻態。In step S103, when the pressure change of the bistable resistive element 10 exceeds the minimum differential pressure ΔP, the bistable resistive element 10 changes from a low resistance state to a high resistance state and is maintained in a high resistance state. That is, when the absolute difference │P2-P1 │ ≥ ΔP between the trigger pressure P2 of the bistable resistive element 10 and the pressure of the initial pressure P1, the operating state of the bistable resistive element 10 is changed and fixed. In high resistance state.

由上述描述可看出,於應用該壓控開關100時,可先確定一個最佳工作壓強,如於標準大氣壓下該雙穩態電阻元件10所承受之壓強大致為1.01×105 帕。於該最佳工作壓強對該雙穩態電阻元件10進行電場激勵使其工作於低阻態。此時,該壓控開關100即可用來監控所處環境之工作壓強變化。而,當該工作壓強上升或者下降之幅度大於△P時,如外界震動使作用於該雙穩態電阻元件10之壓強增大或物體重量直接施加於該雙穩態電阻元件10時該雙穩態電阻元件10所受壓強增大;外界拉伸該雙穩態電阻元件10或外界氣體壓強降低時該雙穩態電阻元件10所受壓強減小,該雙穩態電阻元件10自動切換到高阻態,直到下一個激勵電場之激勵。As can be seen from the above description, when the voltage control switch 100 is applied, an optimum working pressure can be determined first, for example, the pressure of the bistable resistive element 10 is 1.01 × 10 5 Pa at a standard atmospheric pressure. The bistable resistive element 10 is electrically excited to operate in a low resistance state at the optimum operating pressure. At this time, the voltage control switch 100 can be used to monitor the working pressure change of the environment. However, when the working pressure rises or falls by more than ΔP, the bistable force is applied when the pressure applied to the bistable resistive element 10 increases or the weight of the object is directly applied to the bistable resistive element 10, such as external vibration. The pressure of the ohmic resistance element 10 is increased; when the bistable resistance element 10 is externally stretched or the external gas pressure is lowered, the pressure of the bistable resistance element 10 is reduced, and the bistable resistance element 10 is automatically switched to high. The resistance state until the excitation of the next excitation electric field.

請參見圖8,為使用本發明實施例提供之壓控開關100之一種報警系統200,該報警系統200還包括一電源210及一報警裝置220。FIG. 8 is an alarm system 200 for using the voltage control switch 100 provided by the embodiment of the present invention. The alarm system 200 further includes a power source 210 and an alarm device 220.

該電源210分別與該壓控開關100及報警裝置220電連接組成一回路。該電源210用於為該回路提供電壓,且該電源210於該雙穩態電阻元件10所產生之電場不會觸發該雙穩態電阻元件10使該雙穩態電阻元件10工作於高阻態。The power source 210 is electrically connected to the voltage control switch 100 and the alarm device 220 to form a loop. The power source 210 is configured to supply a voltage to the loop, and an electric field generated by the power source 210 in the bistable resistive element 10 does not trigger the bistable resistive element 10 to operate the bistable resistive element 10 in a high resistance state. .

該壓控開關用於控制該報警裝置220報警。具體地,當該激勵電場產生單元20產生一激勵電場使該壓控開關100工作於低阻態時,該報警裝置220用來監控壓差訊號產生單元30之壓差變化。當該壓差訊號產生單元30產生一壓差訊號使該壓控開關100工作於高阻態時該報警裝置220發出一報警訊號。即該報警裝置220僅於該壓控開關100記憶有壓差訊號時發出報警訊號,直到該壓控開關100接收到一激勵電場。The voltage control switch is used to control the alarm device 220 to alarm. Specifically, when the excitation electric field generating unit 20 generates an excitation electric field to operate the voltage control switch 100 in a low resistance state, the alarm device 220 is configured to monitor the differential pressure change of the differential pressure signal generating unit 30. When the differential pressure signal generating unit 30 generates a differential pressure signal to cause the voltage control switch 100 to operate in a high impedance state, the alarm device 220 sends an alarm signal. That is, the alarm device 220 sends an alarm signal only when the voltage control switch 100 memorizes the differential pressure signal until the voltage control switch 100 receives an excitation electric field.

該報警裝置220與該壓控開關100可串聯於該回路中,也可並聯於該回路中。於本實施例中,該報警裝置220可與該壓控開關100串聯,當該壓控開關100工作於高阻態時,該回路電流降低,從而使該報警裝置220發出報警訊號。The alarm device 220 and the voltage control switch 100 can be connected in series in the circuit or in parallel. In the embodiment, the alarm device 220 can be connected in series with the voltage control switch 100. When the voltage control switch 100 is operated in a high impedance state, the loop current is reduced, so that the alarm device 220 sends an alarm signal.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100‧‧‧壓控開關100‧‧‧Voltage control switch

10‧‧‧雙穩態電阻元件10‧‧‧Bistable resistance element

11‧‧‧金屬顆粒11‧‧‧ metal particles

12‧‧‧高分子載體12‧‧‧ Polymer carrier

13‧‧‧金屬導電絲13‧‧‧Metal conductive wire

20‧‧‧激勵電場產生單元20‧‧‧Excitation electric field generating unit

30‧‧‧壓差訊號產生單元30‧‧‧ Differential pressure signal generating unit

40‧‧‧電極40‧‧‧Electrode

200‧‧‧報警系統200‧‧‧ alarm system

210‧‧‧電源210‧‧‧Power supply

220‧‧‧報警裝置220‧‧‧ alarm device

圖1為本發明實施例提供之壓控開關之結構示意圖。FIG. 1 is a schematic structural diagram of a voltage control switch according to an embodiment of the present invention.

圖2為圖1中壓控開關中之雙穩態電阻元件之結構示意圖。2 is a schematic structural view of a bistable resistance element in the voltage control switch of FIG. 1.

圖3為圖2中之雙穩態電阻元件形成有導電通路之結構示意圖。3 is a schematic view showing the structure of the bistable resistive element of FIG. 2 formed with a conductive path.

圖4為圖3中之雙穩態電阻元件於導電通路斷開時之結構示意圖。4 is a schematic view showing the structure of the bistable resistive element of FIG. 3 when the conductive path is broken.

圖5為本發明實施例提供之壓控開關外接一電源且同時接受到複數壓差訊號及複數激勵電場訊號時之電阻變化曲線示意圖。FIG. 5 is a schematic diagram of a resistance change curve when a voltage control switch is externally connected to a power supply and simultaneously receives a plurality of differential pressure signals and a plurality of excitation electric field signals according to an embodiment of the present invention.

圖6為本發明實施提供之另一種壓控開關於未包括壓差產生裝置之結構示意圖。FIG. 6 is a schematic structural diagram of another voltage control switch provided by the implementation of the present invention without including a differential pressure generating device.

圖7為應用本發明實施例提供之壓控開關之流程示意圖。FIG. 7 is a schematic flow chart of applying a voltage control switch according to an embodiment of the present invention.

圖8為具本發明實施例提供之壓控開關之一種報警系統之連接示意圖。FIG. 8 is a schematic diagram of a connection of an alarm system with a voltage control switch according to an embodiment of the present invention.

10‧‧‧雙穩態電阻元件 10‧‧‧Bistable resistance element

11‧‧‧金屬顆粒 11‧‧‧ metal particles

12‧‧‧高分子載體 12‧‧‧ Polymer carrier

13‧‧‧金屬導電絲 13‧‧‧Metal conductive wire

Claims (19)

一種壓控開關,其包括一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒;
該雙穩態電阻元件具有一低阻態與一高阻態兩個工作狀態;
於低阻態,該複數金屬顆粒表面形成有金屬導電絲,該複數金屬顆粒通過該金屬導電絲形成一導電通路,該低阻態之觸發訊號為一激勵電場;
於高阻態,該複數金屬顆粒表面之金屬導電絲斷裂,使該導電通路斷開,該高阻態之觸發訊號為一壓差訊號,該壓差訊號為該導電通路形成時直接作用於該雙穩態電阻元件之一初始壓強與該導電通路斷開時直接作用於該雙穩態電阻元件之一觸發壓強之絕對差值。
A voltage controlled switch comprising a bistable resistive element, the bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier;
The bistable resistive element has two operating states: a low resistance state and a high resistance state;
In the low resistance state, the surface of the plurality of metal particles is formed with a metal conductive wire, and the plurality of metal particles form a conductive path through the metal conductive wire, and the trigger signal of the low resistance state is an excitation electric field;
In a high-resistance state, the metal conductive wire on the surface of the plurality of metal particles is broken to break the conductive path, and the high-impedance trigger signal is a differential pressure signal, and the differential pressure signal directly acts on the conductive path when the conductive path is formed. The initial pressure of one of the bistable resistive elements directly acts on the absolute difference of the trigger pressure of one of the bistable resistive elements when the conductive path is disconnected.
如申請專利範圍第1項所述之壓控開關,其中,該激勵電場為0.1伏特每厘米到100伏特每厘米。The voltage-controlled switch of claim 1, wherein the excitation electric field is from 0.1 volts per centimeter to 100 volts per centimeter. 如申請專利範圍第1項所述之壓控開關,其中,該雙穩態電阻元件工作於低阻態時之初始壓強對應有一最小壓差,該壓差訊號大於等於該最小壓差。The voltage control switch according to claim 1, wherein the initial pressure of the bistable resistive element when operating in a low resistance state corresponds to a minimum differential pressure, and the differential pressure signal is greater than or equal to the minimum differential pressure. 如申請專利範圍第1項所述之壓控開關,其中,該雙穩態電阻元件於高阻態時之電阻與於低阻態時之電阻之比值大於等於102The voltage-controlled switch according to claim 1, wherein the ratio of the resistance of the bistable resistance element in the high resistance state to the resistance in the low resistance state is greater than or equal to 10 2 . 如申請專利範圍第1項所述之壓控開關,其中,該金屬顆粒之彈性模量與該高分子載體之彈性模量之比值大於等於50。The pressure-controlled switch according to claim 1, wherein a ratio of an elastic modulus of the metal particles to an elastic modulus of the polymer carrier is 50 or more. 如申請專利範圍第1項所述之壓控開關,其中,於高阻態時,該高分子載體於該壓差訊號作用下產生變形,使該複數金屬顆粒之間產生相對滑移,從而使該導電通路斷裂。The pressure-controlled switch according to claim 1, wherein in the high-resistance state, the polymer carrier is deformed by the differential pressure signal to cause a relative slip between the plurality of metal particles, thereby The conductive path is broken. 如申請專利範圍第1項所述之壓控開關,其中,該金屬顆粒於該雙穩態電阻元件中之體積分數為5%到40%。The pressure-controlled switch according to claim 1, wherein the metal particles have a volume fraction of 5% to 40% in the bistable resistance element. 如申請專利範圍第1項所述之壓控開關,其中,該金屬顆粒之粒徑範圍為2奈米到20微米。The pressure-controlled switch of claim 1, wherein the metal particles have a particle size ranging from 2 nm to 20 μm. 如申請專利範圍第1項所述之壓控開關,其中,該金屬顆粒為粒徑於1微米到6微米之間之鎳顆粒,該高分子載體為矽橡膠,該鎳顆粒於該雙穩態電阻元件中之體積分數為於8%到12%之間。The pressure-controlled switch according to claim 1, wherein the metal particles are nickel particles having a particle diameter of between 1 μm and 6 μm, and the polymer carrier is a ruthenium rubber, and the nickel particles are in the bistable state. The volume fraction in the resistive element is between 8% and 12%. 如申請專利範圍第1項所述之壓控開關,其中,當該雙穩態電阻元件於高阻態與低阻態之間多次切換時,該雙穩態電阻切換到低阻態時所對應之複數初始壓強相等。The voltage control switch according to claim 1, wherein when the bistable resistance element is switched between a high resistance state and a low resistance state, the bistable resistance is switched to a low resistance state. The corresponding initial initial pressures are equal. 如申請專利範圍第1項所述之壓控開關,其中,當該雙穩態電阻元件於高阻態與低阻態之間多次切換時,該雙穩態電阻切換到低阻態時所對應之複數初始壓強中,至少有兩個初始壓強之差值大於0。The voltage control switch according to claim 1, wherein when the bistable resistance element is switched between a high resistance state and a low resistance state, the bistable resistance is switched to a low resistance state. In the corresponding initial initial pressure, the difference between at least two initial pressures is greater than zero. 一種壓控開關,其中,該壓控開關包括一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒;當該雙穩態電阻元件接收到一激勵電場時,該複數金屬顆粒形成一導電通路,且該雙穩態電阻元件記憶一初始壓強;當直接作用於該雙穩態電阻元件之壓強與該初始壓強之絕對差值大於等於一最小壓差時,該導電通路斷開。A voltage controlled switch, wherein the voltage control switch comprises a bistable resistive element, the bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier; and the bistable resistive element Receiving an excitation electric field, the plurality of metal particles form a conductive path, and the bistable resistive element memorizes an initial pressure; when an absolute difference between the pressure directly acting on the bistable resistive element and the initial pressure is greater than or equal to The conductive path is broken when a minimum differential pressure is reached. 一種壓控開關,其中,其包括:
一雙穩態電阻元件,其包括一高分子載體及分散於該高分子載體中之複數金屬顆粒;
一發出激勵電場之激勵電場產生單元,該激勵電場作用於該雙穩態電阻元件使該複數金屬顆粒形成一導電通路並使該雙穩態電阻元件記憶一初始壓強;以及
一發出壓差訊號之壓差訊號產生單元,用於產生一大於等於一最小壓差之壓差訊號使該導電通路斷開。
A voltage controlled switch, wherein:
a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier;
An excitation electric field generating unit that emits an electric field, the excitation electric field acts on the bistable resistance element to form the plurality of metal particles to form a conductive path and the bistable resistance element memorizes an initial pressure; and a differential pressure signal is emitted The differential pressure signal generating unit is configured to generate a differential pressure signal equal to or greater than a minimum differential pressure to disconnect the conductive path.
如申請專利範圍第13項所述之壓控開關,其中,該雙穩態電阻元件為一膜狀結構。The voltage control switch of claim 13, wherein the bistable resistance element is a film structure. 如申請專利範圍第14項所述之壓控開關,其中,該壓控開關進一步包括兩個電極,該兩個電極設置於該雙穩態電阻元件相對之兩端且與該雙穩態電阻元件電連接。The voltage control switch of claim 14, wherein the voltage control switch further comprises two electrodes disposed at opposite ends of the bistable resistance element and the bistable resistance element Electrical connection. 如申請專利範圍第15項所述之壓控開關,其中,該兩個電極分別設置於該雙穩態電阻元件相對之兩個表面。The voltage control switch of claim 15, wherein the two electrodes are respectively disposed on opposite surfaces of the bistable resistance element. 如申請專利範圍第16項所述之壓控開關,其中,該激勵電場產生單元通過該兩個電極與該雙穩態電阻元件電連接。The voltage-controlled switch of claim 16, wherein the excitation electric field generating unit is electrically connected to the bistable resistance element through the two electrodes. 一種應用壓控開關之方法,包括以下步驟:
提供一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒;
當需要監測該壓控開關所處環境之工作壓強變化時,於初始壓強P1施加一激勵電場作用於該雙穩態電阻元件,使該雙穩態電阻元件處於並維持低阻態;
當該雙穩態電阻元件之壓強變化超過最小壓差△P時,該雙穩態電阻元件由低阻態變成高阻態並維持於高阻態。
A method of applying a voltage controlled switch includes the following steps:
Providing a bistable resistive element, the bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier;
When it is required to monitor the working pressure change of the environment in which the voltage control switch is located, an excitation electric field is applied to the bistable resistance element at the initial pressure P1 to make the bistable resistance element be in a low resistance state;
When the pressure change of the bistable resistive element exceeds the minimum differential pressure ΔP, the bistable resistive element changes from a low resistance state to a high resistance state and is maintained in a high resistance state.
一種報警系統,其中,其包括:
一報警裝置;
一壓控開關,用於控制該報警裝置報警,該壓控開關包括一雙穩態電阻元件,該雙穩態電阻元件包括一高分子載體及分散於該高分子載體中之複數金屬顆粒;
一激勵電場產生單元,用於施加一激勵電場使該雙穩態電阻元件工作於低阻態;以及
一壓差訊號產生單元,用於產生一壓差訊號使該雙穩態電阻元件工作於高阻態。
An alarm system, wherein:
An alarm device;
a voltage control switch for controlling an alarm of the alarm device, the voltage control switch comprising a bistable resistance element, the bistable resistance element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier;
An excitation electric field generating unit for applying an excitation electric field to operate the bistable resistance element in a low resistance state; and a differential pressure signal generating unit for generating a differential pressure signal to operate the bistable resistance element Resistance state.
TW99111027A 2010-04-09 2010-04-09 Pressure controlling switch and method applied the same and alert system using the same TWI413145B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW99111027A TWI413145B (en) 2010-04-09 2010-04-09 Pressure controlling switch and method applied the same and alert system using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW99111027A TWI413145B (en) 2010-04-09 2010-04-09 Pressure controlling switch and method applied the same and alert system using the same

Publications (2)

Publication Number Publication Date
TW201135788A TW201135788A (en) 2011-10-16
TWI413145B true TWI413145B (en) 2013-10-21

Family

ID=46752043

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99111027A TWI413145B (en) 2010-04-09 2010-04-09 Pressure controlling switch and method applied the same and alert system using the same

Country Status (1)

Country Link
TW (1) TWI413145B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411588A (en) * 2000-03-03 2003-04-16 索尼电脑娱乐公司 Operating apparatus and signal-output-modulating method for same
JP2005528740A (en) * 2002-05-02 2005-09-22 スリーエム イノベイティブ プロパティズ カンパニー Pressure activated switch and touch panel
TW200736781A (en) * 2006-03-24 2007-10-01 Daxon Technology Inc Pressure sensitive electrochromic device and method of fabricating the same
TW200933946A (en) * 2007-09-03 2009-08-01 Nissan Chemical Ind Ltd Organic switching device and method for producing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411588A (en) * 2000-03-03 2003-04-16 索尼电脑娱乐公司 Operating apparatus and signal-output-modulating method for same
JP2005528740A (en) * 2002-05-02 2005-09-22 スリーエム イノベイティブ プロパティズ カンパニー Pressure activated switch and touch panel
TW200736781A (en) * 2006-03-24 2007-10-01 Daxon Technology Inc Pressure sensitive electrochromic device and method of fabricating the same
TW200933946A (en) * 2007-09-03 2009-08-01 Nissan Chemical Ind Ltd Organic switching device and method for producing the same

Also Published As

Publication number Publication date
TW201135788A (en) 2011-10-16

Similar Documents

Publication Publication Date Title
CN102136836B (en) Voltage controlled switch, application method thereof and alarming system using voltage controlled switch
Wang et al. Enhancing the matrix addressing of flexible sensory arrays by a highly nonlinear threshold switch
US7312096B2 (en) Nanotube semiconductor structures with varying electrical properties
TWI399864B (en) Light emitters using nanotubes and methods of making same
KR20040106447A (en) Pressure activated switch and touch panel
US8803536B2 (en) Detector responsive to interactions of varying intensity
KR20030094539A (en) microelectromechanical device using resistive electromechanical contact
CN102136835B (en) Temperature controlled switch, application method thereof and warning system applying temperature controlled switch
TWI413145B (en) Pressure controlling switch and method applied the same and alert system using the same
US20110250393A1 (en) Self-assembled films and processes thereof
Uvarov et al. Stiction-protected MEMS switch with low actuation voltage
Strong et al. Electrical discharge across micrometer-scale gaps for planar MEMS structures in air at atmospheric pressure
Zhang et al. Electromagnetic Pulse Powered by a Triboelectric Nanogenerator with Applications in Accurate Self‐Powered Sensing and Security
Oliveros‐Mata et al. Dispenser printed Bismuth‐based Magnetic Field sensors with Non‐Saturating large magnetoresistance for touchless interactive surfaces
CN104423706A (en) Sensor device, method of manufacturing sensor device, display apparatus, and input apparatus
TWI420557B (en) Temperature controlling switch and method applied the same and alert system using the same
KR100887337B1 (en) Flexible film speaker and the process for fabrication thereof
EP2443623A1 (en) Method and device for driving an oled device
CN106293285A (en) Touch screen and display device
US3209298A (en) Arrangement for controlling circuit conductivity
Koshi et al. Stretchable electronic device with repeat self-Healing ability of metal wire
WO2009087812A1 (en) Mechanical fuse, and method for setting the sensitivity of the same
US11598744B2 (en) Sensor
WO2008090059A2 (en) Electro-pyrotechnic initiator with magnetic control
KR20230042991A (en) Elastic tactile sensor and manufactuing method thereof